JP3371630B2 - Dust measurement method, dust measurement device, and semiconductor device manufacturing method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dust measuring method, a dust measuring device , and a semiconductor device manufacturing method . INDUSTRIAL APPLICABILITY The present invention can be used, for example, as a dust monitor for manufacturing a semiconductor device, and particularly, as an I
n-situ particle size of dust at the (low pressure or vacuum) conditions, all SANYO be applied as a dust monitor that allows also the detection of the number and the semiconductor device using the same
It is applicable to the manufacturing method.

[0002]

2. Description of the Related Art As semiconductor devices have become highly integrated, design rules have been reduced, and wiring widths and distances between wirings have been reduced accordingly. On the downsized semiconductor device, dust generated during manufacturing of the semiconductor device causes short circuit between wires and disconnection in the semiconductor device. For example, FIG. 9 (a)
As shown in, the wiring 1 may be disconnected by the insulating dust 6a. Further, as shown in FIG. 9B, the conductor dust 6b may be bridged between the wirings 1 to cause a short circuit between the wirings. Dust management is one of the most important matters in the semiconductor device manufacturing process, and has a great influence on the reliability of the semiconductor device. Also, due to the reduction of design rules, improvement of the dust detection lower limit is required. (As a conventional technique, for example, as a countermeasure against particles in comeryt sputtering, a monthly Semiconduct
r World 11992.12. , Pages 112-. )

At present, semiconductor manufacturing lines have been cleaned, and dust control or E
Dust management in the semiconductor device manufacturing apparatus in the x-situ state (vacuum breaking state) is performed. But I
Although the control of dust in the n-situ state is more important for the reliability of the semiconductor device, the In
-Situ dust monitor has not been reported.

An example of a conventional in-situ dust monitor is given below. In the conventional technique, as shown in FIG. 10, laser light 5 (indicated by an arrow indicates the laser irradiation direction) reduced to about 1 μm is applied to the analysis region, and the intensity and energy of scattered light 7 due to dust 6 are applied. Is measured by the detector 4. The number of dust particles is measured from the frequency of occurrence of scattered light 7, and the particle size of dust particles is measured from energy.

The above dust monitor has the following problems. That is, the intensity of the scattered light 7 is not always proportional to the dust diameter, and the resolution of the dust diameter is not sufficient. Also, since the analysis area is narrow, it is difficult to determine the number of dust 6 from the frequency of occurrence,
The measurement accuracy does not reach the required level of dust control.

[0006]

The present invention solves the above-mentioned problems of the prior art and is capable of measuring the particle size and the number of dust with high accuracy. Therefore, for example, the dust measurement in a low pressure state is also satisfactory. Dust measurement method and dust measurement device capable of controlling dust , and manufacturing method of semiconductor device
The purpose is to provide the law .

[0007]

The dust measuring method according to the present invention is applied to a low pressure or vacuum state during a semiconductor device manufacturing process.
To measure the particle size and number of dust in Japan
Method of irradiating parallel electromagnetic waves to the dust measurement area.
Shines, by installing a CCD detector downstream region of the electromagnetic wave, the
The diameter of the light shielding part caused by dust by the CCD detector,
The particle size and number of dust can be measured by detecting the number.
The dust measurement area and the CCD detection
Characterized by installing a concave lens or a convex mirror between it and the vessel
And a dust measuring method for achieving the above object.

In the dust measuring method of the present invention,
The dust that should be is the dust in the sputter chamber
Can be configured.

The dust detection device of the present invention is made of a semiconductor device.
Particle size of dust in the sputter chamber used for manufacturing
A dust measuring device for measuring the number of dust
An electromagnetic wave irradiating means for irradiating an electromagnetic wave forming parallel light to the region ,
And a CCD detector installed in the downstream region of the electromagnetic wave, the
The diameter of the light shielding part caused by dust by the CCD detector,
The particle size and number of dust can be measured by detecting the number.
The dust measurement area and the CCD detection
A dust measuring device, characterized in that a concave lens or a convex mirror is installed between the container and the container , thereby achieving the above object.

The dust detector of the present invention is provided with the electromagnetic wave irradiation.
Shooting means, the concave lens or convex mirror, and the CCD detector.
The dispenser and all are installed in the sputter chamber
Can be configured.

A method of manufacturing a semiconductor device according to the present invention is a semiconductor
During the device manufacturing process, sputter deposition is performed on the substrate.
Dust under low pressure or vacuum in the putter chamber
A method for manufacturing a semiconductor device, which includes a dust measurement step of measuring the particle size and the number of laser beams, wherein
Irradiates the dust measurement area in the
A CCD detector is installed in the flow area, and the CCD detector
Detects the diameter and number of light-shielding parts caused by dust.
By measuring the particle size and number of dust,
A concave lens is provided between the dust measurement area and the CCD detector.
Or a convex mirror is installed on the semiconductor device.
And a method for producing the above-mentioned object. In the method for manufacturing a semiconductor device of the present invention,
The sputter film formation is a TiN film formation on the substrate.
You can

For example, when carrying out the present invention, specifically, the measurement area is irradiated with electromagnetic waves. A laser beam having good directivity is desirable as the electromagnetic wave. A position resolution detector, for example, a CCD detector is installed downstream of the measurement area. When dust is present when the measurement area is irradiated with electromagnetic waves,
Although a light-shielding portion is generated by dust, the light-shielding portion is detected by a detector in the downstream direction. The particle size and the number of dust particles present in the measurement region can be measured from the diameter and the number of the light-shielding portions (see the examples of FIGS. 1 and 2 described later in detail).

The lower limit of detection of the dust diameter in the measurement area has a correlation with the wavelength of incident light and the diameter of the element of the position resolution detector.
For example, when an electromagnetic wave with a wavelength of 50 nm is incident, the lower limit of detection of the dust diameter is 1 μm, and when an electromagnetic wave with a wavelength of 5 nm is incident, the lower limit of detection of the dust diameter is 0.1 μm and the wavelength is 5 nm. When electromagnetic waves are incident, the lower limit of detection of dust diameter is 0.1 nm. Further, the diameter of the element of the position resolution detector becomes the detection lower limit as it is.

The incident light is converted into an electromagnetic wave having a shorter wavelength,
Or by reducing the element diameter of the position resolution detector,
The detection limit of dust diameter is improved. However, apart from that, by introducing an appropriate optical axis system, such as a concave lens or a convex mirror, between the measuring region on the optical axis of the measuring device and the detector, it is possible to perform measurement with higher resolution. For example, in the specific example of FIG. 5 described later, an example in which a concave lens is used as the optical axis system is shown, and in the example of FIG. 7, a convex mirror is used, but it is possible to detect a dark portion enlarged by the optical axis system. It is possible to detect the particle size of dust with higher resolution.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Examples of the present invention will be shown below.
The present invention is not limited to the examples below.

Example 1 (Reference Example) In this example , dust is detected and measured in a semiconductor device manufacturing process . This example is a reference example
However, this is not a prerequisite for the description of the embodiments of the present invention described below.
Therefore, for convenience, in the present specification, it is referred to as an example.
explain.

As shown in FIG. 1, the dust detecting apparatus of this embodiment has an electromagnetic wave irradiating means for irradiating an electromagnetic wave to a dust measuring region (with an arrow I to indicate the irradiation direction of a laser, which is an electromagnetic wave in the case of this embodiment). (Shown) and the detection means 11 having a position resolution installed in the downstream direction of the electromagnetic wave.

That is, in the present embodiment, as shown in FIG. 1 as a dust monitor, an electromagnetic wave (here, a laser beam 5, the irradiation direction of which is indicated by an arrow I) is irradiated onto the region where the dust 6 is to be measured. The detection means 11 for detecting the light-shielding portion 7a due to dust is installed downstream of the electromagnetic wave.

In this embodiment, in particular, the detecting means 11 having a positional resolution is installed in the downstream direction of the electromagnetic wave, and the detecting means 11 detects the diameter and number of the light-shielding portions 7a generated by the dust to detect the dust. The particle size and number are also measured.

The light-shielding portion 7a is detected and monitored as shown in FIG. 2 in the state viewed from the direction of arrow II in FIG. 1 (the state detected by the detection means 11).

In the present embodiment, in-situ dust control is also performed in the semiconductor device manufacturing apparatus in operation.

More specifically, in this embodiment, the case where the present invention is embodied will be described by taking dust detection in the sputtering chamber 2 as shown in FIG. 3 as an example. The spatter here is
TiN 300 nm film formation is performed. The conditions are shown below. TiN film forming condition gas Ar = 33 sccm, N ₂ = 66 sccm pressure 0.4 Pa DC power source 8 kW substrate heating temperature 300 ° C. film forming time 192 sec

A device layout diagram is shown in FIG. A wafer 9 as a material to be processed is placed in the sputtering chamber 2 and D
A voltage is applied by the C power supply 3 (reference numeral 12 is a cathode). A laser oscillator 10 is arranged in the chamber 2 as an electromagnetic wave irradiating means, and an electromagnetic wave (laser light 5) from this is radiated to a dust measurement area, and when dust 6 is present, a light-shielding portion is created by this, which detects position resolution. It is detected by the device 11.

In this embodiment, the detection area (dust measurement area) is a 10 to 12 nm area on the wafer surface. A laser is used as an electromagnetic wave for detecting and measuring dust, and a He-Ne laser is used as the laser (wavelength is 633 nm). Laser beam size is 2 × 20
It is 0 mm. A CCD detector is used as the position resolution detector 11.

FIG. 4 shows the position resolution detector (CC
The monitor figure by D) (the monitor figure from the arrow II direction of FIG. 3) is shown. The portion shielded by dust is detected by the CCD detector, which is the position resolution detector 11, as a dark portion. The particle size of dust can be measured from the size of the dark area, and the number of dust can be measured from the number of dark areas.

According to the present embodiment, it is possible to detect dust with high resolution in the In-Situ state, to quickly deal with dust, and to improve the reliability of the semiconductor device.

Further, in the semiconductor device manufacturing apparatus, it becomes possible to manage dust in the operating state, and there is an effect that throughput is improved.

In the present embodiment, since the dust detection with higher resolution can be performed as compared with the conventional technique, the detection lower limit of the dust diameter to be detected is improved, and the design rule can be further reduced. There is an effect.

Embodiment 2 This embodiment shows an example in which dust detection in a sputtering chamber is detected with higher resolution by using an optical axis system. Please refer to FIG. 5 and FIG.

For sputtering, a TiN film having a thickness of 300 nm is formed.
The conditions are shown below. TiN film forming condition gas Ar = 33 sccm, N ₂ = 66 sccm pressure 0.4 Pa DC power source 8 kW substrate heating temperature 300 ° C. film forming time 192 sec

The detection area is 10 to 12 nm on the wafer surface.
Area. A He-Ne laser is used as the laser (wavelength is 633 nm). The laser beam size is 1.5 × 150 mm. The optical axis system uses a concave lens 8 as shown in FIG.

FIG. 6 shows a device layout of this embodiment. Except that the optical axis system 13 is arranged, it is almost the same as the first embodiment. The portion shielded by the dust 6 is detected as a dark portion by the position resolution detector 11 (a CCD detector is used in this embodiment). From the size of the dark part to the particle size of the dust,
The number of dusts can be measured from the number of dark areas. The same effect as in Example 1 is exhibited, but the lower limit of particle size detection and resolution are improved as compared with Example 1. In FIG. 6, the same reference numerals as those in FIG. 3 indicate the same components.

As described above, in this embodiment, it is possible to detect dust with a higher resolution than in the first embodiment, the detection lower limit of the dust diameter to be detected is improved, and it is possible to further reduce the design rule. There is an effect.

Embodiment 3 In this embodiment also, an example will be given in which dust detection in the sputtering chamber is performed with higher resolution by using the optical axis system. A convex mirror is used instead of a concave lens as the optical axis system. The optical axis system is shown in FIG. 7, and the device arrangement is shown in FIG.

For sputtering, a TiN film having a thickness of 300 nm is formed.
The conditions are shown below. TiN film forming condition gas Ar = 33 sccm, N ₂ = 66 sccm pressure 0.4 Pa DC power source 8 kW substrate heating temperature 300 ° C. film forming time 192 sec

The detection area is 10 to 12 nm on the wafer surface.
Area. A He-Ne laser is used as the laser (wavelength is 633 nm). The laser beam size is 1.5 × 150 mm. A convex mirror 14 is used for the optical axis system as shown in FIG.

A device layout diagram is shown in FIG. The part shielded by dust is the dark part and the detector 11 (also in this example CC
D imager). The particle size of the dust 6 can be measured from the size of the dark part, and the number of dust 6 can be measured from the number of the dark part. Although the same effect as that of the first embodiment is exhibited, as compared with the first embodiment, since the optical axis system using the convex mirror 14 is provided, the same effect as that of the second embodiment is obtained, and the lower limit of particle size detection, The resolution is improved. Note that, in FIG. 8, the same reference numerals as those in FIG. 3 denote the same components.

Embodiments 4 to 6 In the above Embodiments 1 to 3, the laser was used as the electromagnetic wave, but other electromagnetic waves such as i-line can also be used. In Examples 4 to 6, the same effect was obtained by using the i-line instead of the lasers of Examples 1 to 3. The directivity was better and the resolution could be improved by using a laser.

[0039]

The dust measuring method, the dust measuring apparatus , and the method for manufacturing a semiconductor device according to the present invention make it possible to measure the particle size and the number of dust particles with high accuracy, and therefore the dust should be satisfied even in the low pressure state. It has become possible to manage.

[Brief description of drawings]

FIG. 1 is a diagram showing an outline of the configuration of Example 1 and showing dust measurement of the present invention.

FIG. 2 is a dust position detection monitor diagram from the II direction in FIG.

FIG. 3 is a device layout view showing the first embodiment.

FIG. 4 is a dust position detection monitor diagram from the II direction in FIG. 3.

FIG. 5 is a diagram showing a configuration of a second exemplary embodiment.

FIG. 6 is a device layout diagram of the second embodiment.

FIG. 7 is a diagram showing a configuration of a third exemplary embodiment.

FIG. 8 is a device layout diagram of the third embodiment.

FIG. 9 is a diagram illustrating the background of the invention.

FIG. 10 is a diagram showing a conventional technique.

[Explanation of symbols]

1 Wiring 2 Sputter Chamber 3 DC Power Supply 4 Detector 5 Laser Light 6 Dust 6a Insulator Dust 6b Conductor Dust 7 Scattered Light 8 Concave Lens (Optical Axis System) 9 Wafer 10 Laser Transmitter (Electromagnetic Wave Irradiation Means) 11 Dust Detector ( Position resolution detector, CCD detector) 12 Cathode 14 Convex mirror (optical axis system)

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) G01N 15/14 G01B 11/08 G01N 15/02 H01L 21/66 G01N 21/88

Claims (6)

(57) [Claims] 1. A low pressure during a semiconductor device manufacturing process.
A dust measuring method for measuring the particle size and number of dust in a vacuum state , comprising irradiating parallel electromagnetic waves to a dust measuring region, and installing a CCD detector in the downstream region of the electromagnetic wave . concave lens between the diameter of the light-shielding portion caused by dust, detecting the dust particle size by performing a number, as well as measuring the number, the CCD detector and the dust measurement region by
Or a convex mirror is installed on the dust measuring method. 2. The dust to be measured is a sputter channel.
The dust according to claim 1, which is dust in the bar.
Dust measurement method . 3. A sputter channel used for manufacturing a semiconductor device.
A dust measuring device for measuring the particle size and number of dust in a bar, comprising: an electromagnetic wave irradiating means for irradiating an electromagnetic wave forming parallel light to a dust measuring area; and a CCD detector installed in a downstream area of the electromagnetic wave. , Of the light-shielding portion caused by dust by the CCD detector
The particle size and number of dust can be detected by detecting the diameter and number.
With measuring a concave lens between the CCD detector and the dust measurement region
Dust measuring device, which is equipped with a mirror or a convex mirror . 4. The electromagnetic wave irradiation means, the concave lens or
The convex mirror and the CCD detector are all the sputter
The dust measuring device according to claim 3, wherein the dust measuring device is arranged in the chamber . 5. A substrate is screened during a semiconductor device manufacturing process.
Low pressure or true in sputtering chamber for depositing film
A method for manufacturing a semiconductor device including a dust measurement step of measuring the particle size and number of dust in an empty state, wherein electromagnetic waves forming parallel light are measured in a dust inside a sputtering chamber.
Irradiate a fixed area and install a CCD detector in the downstream area of the electromagnetic wave.
The CCD detector,
The particle size and number of dust can be detected by detecting the diameter and number.
With measuring a concave lens between the CCD detector and the dust measurement region
A method of manufacturing a semiconductor device, characterized in that a mirror or a convex mirror is installed . 6. The TiN film is formed on a substrate by the sputtering film formation.
The method for manufacturing a semiconductor device according to claim 5, wherein