JP3328798B2 - Ion implanter - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus for a semiconductor substrate, and more particularly to an ion implantation apparatus capable of changing an ion implantation angle.

[0002]

2. Description of the Related Art In an ion implantation method, as is well known, the physical properties of a target material are controlled by irradiating a target material (for example, a semiconductor substrate) with accelerated ions and introducing the ions into the target material. Or a method of synthesizing a new material, and is widely used in the manufacture of LSIs and the like. When irradiating such ions, a beam scan method in which ions are implanted into the entire surface of the substrate while irradiating the substrate (wafer) with an ion beam, a disk scan method in which the substrate is moved by mechanically moving the substrate, and a method in which these are mixed It has been known.

[0003] As an ion implantation apparatus, a rotating disk system is widely used in order to suppress a rise in substrate temperature. This rotating disk system has a diameter of 5
A plurality of substrates are set on an aluminum disk of 0 cm or more, and this rotary disk is linearly moved in the vertical direction while rotating at a rotation speed of, for example, 1000 rpm.

Incidentally, the angle of incidence (implantation angle) of the ion beam on the substrate is important. During the ion implantation, the implantation angle can be changed to prevent shadows on the substrate or to be implanted into walls in various plane directions. To improve the quality of the substrate.

FIG. 2 schematically shows a part of a conventional ion implantation apparatus capable of changing an implantation angle. In FIG. 2, an injection chamber 30 containing a rotating disk on which a plurality of semiconductor substrates are set, and the injection chamber 30 is defined by a horizontal axis H
In addition, only the support frame 40 for supporting the rotation (swing) about the vertical axis V is shown. Injection chamber 30
Is rotatable (swingable) with respect to the horizontal axis H by rotatably supporting the rotating shafts 31 provided on both sides in the horizontal direction with two supports 41. Further, the injection chamber 30 and the entire support frame 40 supporting the injection chamber 30 can be rotated (swinged) about the vertical axis V.

[0006] The illustration of the rotary drive mechanism for the injection chamber 30 and the rotary drive mechanism for the support frame 40 is omitted. Further, the internal structure of the injection chamber 30 and the injection chamber 3
A mechanism for rotating the rotating disk in the cylinder 0 and for linearly moving the disk in the vertical direction, a device for irradiating the ion beam into the implantation chamber 30, and the like are described in, for example, JP-A-2-1398.
No. 46, the illustration is also omitted.

[0007]

The ion implantation apparatus as shown in FIG. 2 has a structure in which a rotating shaft 31 extending from both sides of the implantation chamber 30 is rotatably supported by two supports 41. Therefore, a predetermined space is required on both sides of the injection chamber 30. This means that the space occupied in the vacuum vessel in which the injection chamber 30 is installed increases. Conversely, in a vacuum vessel having a limited volume, there is a problem that the injection chamber 30 cannot be expanded on the extension of the horizontal rotation axis.

Accordingly, an object of the present invention is to improve a structure for swingably supporting an implantation chamber with respect to a horizontal axis and a vertical axis, and particularly to an ion implantation apparatus effective for reducing an installation space in a horizontal axis direction. Is to provide.

[0009]

SUMMARY OF THE INVENTION An ion implantation apparatus according to the present invention includes an implantation chamber containing a rotating disk on which a plurality of semiconductor substrates are set, and the implantation chamber is swingable about a horizontal axis and a vertical axis. A support frame for supporting the ion implantation apparatus, the support frame includes a drive mechanism that supports the entire implantation chamber and rotates the implantation chamber with respect to the horizontal axis. One side of both sides of the injection chamber is cantilevered outside one end surface of both sides of the injection chamber.
The injection chamber is rotatably supported, and the other side of both sides of the injection chamber is provided with a rotation part that rotates with rotation about the horizontal axis , and the other side of the support frame is provided on the other side of the support frame. Inside the other end face of both sides of the injection chamber,
It is characterized in that a guide portion for supporting the rotation portion and guiding the rotation is provided.

It is to be noted that the rotating portion is provided at a lower portion of the other side of the both sides of the injection chamber at the other side of the support frame.
The guide unit is provided with a roller mechanism having one or more rollers, and the guide unit accommodates the roller mechanism, and is configured by an arc-shaped groove along a track along with its rotation. It is characterized by being.

[0011] Further, a rotating portion different from the rotating portion is provided at a height of a substantially middle portion on the other side of both sides of the injection chamber, and one or more other rotating portions are provided. A roller mechanism having rollers, and the other side of the support frame,
Along with providing a columnar support, the columnar support
While accommodating the roller mechanism, a guide portion formed of an arc-shaped groove along a trajectory accompanying the rotation may be provided.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described with reference to FIG. In FIG. 1, an injection chamber 10 containing a rotating disk on which a plurality of semiconductor substrates are set, and a support for rotatably (swinging) the injection chamber 10 about a horizontal axis H and a vertical axis V are supported. In addition to the frame 20, a rotation drive mechanism 15 of the injection chamber 10 and a rotation drive mechanism 25 of the support frame 20 are shown. Conventional examples of the internal structure of the implantation chamber 20, a mechanism for rotating a rotating disk (partially shown by broken lines in the implantation chamber 20), an apparatus for irradiating the implantation chamber 10 with an ion beam, and the like are described in the related art. Since the mechanism is the same as that of FIG. In the present embodiment, the rotating disk is caused to linearly move in the horizontal (left / right) direction in the injection chamber 20, but this is the same as the mechanism for linearly moving the rotating disk in the vertical direction described in the above-mentioned publication. The illustration is omitted because the mechanism may be used.

The support frame 20 includes a rotation drive mechanism 15 for rotating the injection chamber 10 about a horizontal axis H, and a rotation shaft 11 provided on one of both sides of the injection chamber 10 for the horizontal axis H. It is rotatably supported by a cantilever type columnar support 21. On the other hand, injection chamber 1
The other of the two sides is provided with a rotating portion that rotates with the rotation about the horizontal axis H. The support frame 20 supports the rotating portion and guides the rotation. 22a is provided.

In the present embodiment, the rotating portion is provided at a lower portion of the other side of the injection chamber 10 and includes a roller mechanism 12a having one or more rollers. The roller mechanism 12a is accommodated, and is realized by an arc-shaped groove along a trajectory accompanying the rotation. In addition,
The roller mechanism 12a is provided on the bracket 13a.

Further, in the present embodiment, a roller mechanism 12b similar to the roller mechanism 12a is provided as a rotating section separate from the rotating section.
Is provided at the height position of the other approximately middle part of both sides of the injection chamber 10. The support frame 20 is provided with a columnar support 23, and the support 23 is provided with a guide portion 22b formed of an arc-shaped groove along a track along with the rotation while accommodating the roller mechanism 12b. ing.

The rotation drive mechanism 15 for the injection chamber 10 includes:
Here, this is realized by a ball screw mechanism, and this ball screw is supported by a support provided at the base of the support 21.
One end of the ball screw shaft is connected to the outer wall of the injection chamber 10, and the nut body screwed to the ball screw shaft is rotated by a rotation drive source (not shown) so that the ball screw shaft is moved back and forth. On the other hand, the rotation drive mechanism 25 of the support frame 20
Is also realized by a ball screw mechanism, and this ball screw is supported by a support provided on a base frame (not shown). One end of the ball screw shaft is connected to the support frame 20,
The nut body screwed to the ball screw shaft is rotated by a rotation drive source (not shown) to move the ball screw shaft back and forth. The mechanism for supporting the rotation of the support frame 20 about the vertical axis V may be the same as that of the related art, and thus will not be described.
May be supported on a base frame (not shown) so as to be rotatable about a vertical axis V.

With the structure as described above, the rotation drive mechanism 1
5 by pushing and pulling the injection chamber 10.
The roller mechanisms 12a and 12b integrated with the
2a and 22b, and the injection chamber 10 has a horizontal axis H
(Swing) around. On the other hand, by pushing and pulling the support frame 20 by the rotation drive mechanism 25, the support frame 20 rotates (oscillates) around the vertical axis V,
At the same time, the injection chamber 10 also rotates (oscillates) about the vertical axis V.
I do.

According to the above-described structure, by eliminating one of the horizontal rotation shafts conventionally required on both sides of the injection chamber, the space for the eliminated rotation shaft can be reduced. . Alternatively, it is possible to enlarge the injection chamber by using the space for the abolished rotating shaft. Also,
Since there is no obstruction on the side of the injection chamber without the rotation axis, access to the injection chamber from the side, for example, the wafer transfer mechanism and the detector can be easily attached to the side surface, and the side The mechanism for moving the rotating disk linearly in the horizontal direction can be easily arranged.

In the above-described embodiment, the other side of the injection chamber 10 is supported and guided by two guide portions. However, this guide portion is a lower side of the other side of the injection chamber 10, that is, Practical application is possible with only the guide portion 22a.

[0020]

According to the present invention, it is possible to provide an ion implantation apparatus which is particularly effective for reducing the installation space in the horizontal axis direction or expanding the implantation chamber. That is,
The support frame supports the entire injection chamber and allows the injection chamber
Equipped with a drive mechanism that rotates about a flat shaft,
For the axis, cantilever one of the two sides of the injection chamber
In the formula, the rotation is performed outside the end face on one side of both sides of the injection chamber.
Movably supported, the other of the two sides of the injection chamber
The side has a rotating part that rotates with the rotation about the horizontal axis.
The support frame on both sides of the injection chamber
Support the rotating part inside the other end face of the
A guide section for guiding rotation is provided on the
The holding part is retracted inside from the other end face of the injection chamber.
The width of the injection chamber and support frame
Can be configured. The injection chamber and support frame
As the width of the arm part is made smaller,
Widely open the other end of the injection chamber on the side in the vertical direction.
Can be released and laterally perpendicular to the disk rotation axis
Additional transfer equipment to the other end of the injection chamber
Mounting and side injection chambers perpendicular to the disc rotation axis.
Effectively used for disk maintenance work from the other side
Can be scraped. Furthermore, the rotating parts are located on both sides of the injection chamber.
On the other side of the support frame at the bottom of the other side of
Consists of a roller mechanism with one or more rollers
The guide unit accommodates the roller mechanism and
Since it is composed of arc-shaped grooves along the trajectory accompanying the movement, injection
Support frame at the bottom of the other side of the room
Use the space on the other side of the
With this, the lower part on the other side of the injection chamber is securely guided and supported
can do. In addition, a rotating part different from the rotating part
It is installed at the height of the middle of the other side of the entrance.
A roller mechanism having one or more rollers with another rotating part
On the other side of the support frame.
Along with a columnar support,
The circular arc along the trajectory accompanying the rotation while containing the mechanism
Since the guide part composed of a groove is provided, the other part of the injection chamber
Side of the injection chamber close to the horizontal pivot.
Rolling can be guided and supported.

[Brief description of the drawings]

FIG. 1 is a diagram showing an ion implantation apparatus according to the present invention with respect to an implantation chamber, a supporting portion thereof, and a rotation driving mechanism.

FIG. 2 is a diagram showing a conventional ion implantation apparatus with respect to an implantation chamber and a supporting portion thereof.

[Explanation of symbols]

 10, 30 Injection chamber 11, 31 Rotary shaft 12a, 12b Roller mechanism 13a, 13b Bracket 15, 25 Rotation drive mechanism 20, 40 Support frame 21, 23, 41 Support 22a, 22b Guide portion

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01J 37/317 H01J 37/20

Claims (3)

(57) [Claims] 1. An ion implantation apparatus comprising: an implantation chamber containing a rotating disk on which a plurality of semiconductor substrates are set; and a support frame for swingably supporting the implantation chamber about a horizontal axis and a vertical axis. in the apparatus, the support frame supports the entire injection chamber provided with a driving mechanism for rotating said injection chamber with respect to the horizontal axis, one side of both sides of said injection chamber with respect to the horizontal axis Cantilever type on both sides of the injection chamber
A support section rotatably supported on an outer side of an end face on one side, and a rotation section configured to rotate with rotation about the horizontal axis on the other side of both sides of the injection chamber; of the other side, both support the injection chamber
An ion implantation apparatus , wherein a guide portion for supporting the rotating portion and guiding the rotation is provided inside the other end surface of the id . 2. The ion implantation apparatus according to claim 1, wherein the rotating portion is the other of both sides of the implantation chamber.
Provided on the other side of the support frame at the bottom side, it is constituted by the roller mechanism having one or more rollers, the guide section, housing the roller mechanism, along a trajectory associated with the rotation An ion implantation device, comprising an arcuate groove. 3. The ion implantation apparatus according to claim 2, wherein a rotation part different from the rotation part is provided at a height position of a substantially middle part on the other side of both sides of the implantation chamber, The other rotating portion is also configured by a roller mechanism having one or more rollers, and a columnar support is provided on the other side of the support frame , and the roller mechanism is housed in the columnar support. An ion implantation apparatus characterized in that a guide portion constituted by an arc-shaped groove along a trajectory accompanying the rotation is provided.