JP3323764B2 - Processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention removes a fluorine-containing carbon film adhered inside a processing apparatus by a cleaning gas before forming a fluorine-containing carbon film on an object to be processed such as a semiconductor wafer. Hydrogenated amorphous carbon on inner wall of processing equipment by pre-coat gas
The present invention relates to a method for precoating a film .

[0002]

2. Description of the Related Art Aluminum wiring is mainly used as a wiring pattern of an integrated circuit, and an SiO ₂ film or a SiOF film is used as an interlayer insulating film for insulating the aluminum wiring. Has good film quality,
For example, ECR (El
electron Cyclotron Resonance
e) There is a tendency to use plasma treatment.

[0003] Simultaneously when an example of ECR plasma processing the plasma processing apparatus for performing listed in Figure 11, is supplied through a waveguide 11 for microwaves example 2.45GHz of the plasma generating chamber 1A of the vacuum container, A magnetic field of a predetermined size, for example, 875 gauss is applied by the electromagnetic coil 12, and the interaction (resonance) between the microwave and the magnetic field causes a plasma gas, such as an Ar gas or an O ₂ gas, or the film forming chamber 1B
A reactive gas such as SiH ₄ gas introduced into the inside is turned into a plasma, and active species of the SiH ₄ gas are formed by the plasma to form a reactive gas on the surface of the semiconductor wafer W mounted on the mounting table 13 made of AlN (aluminum nitride). A thin film is formed.

[0004] In such a plasma processing apparatus, SiO 2
_{When a} film forming process such as _two films is performed, these films also adhere to the wall surface of the vacuum vessel 10 and the periphery of the mounting table 13, but when the film forming process proceeds and the film thickness becomes a certain thickness. Since the adhered film comes off and causes particles, S
After a film forming process such as an iO ₂ film is performed, a predetermined cleaning is performed to remove these adhered films.

For example, cleaning for removing an SiO ₂ film or the like is performed, for example, for about 20 minutes every time 12 wafers W are formed, and C is used as a cleaning gas.
F-based gas such as F ₄ gas and NF ₃ gas
The gas is activated by plasma, and the active species reacts with the adhered film and is removed.

After the cleaning is completed, a predetermined precoating is performed to prevent particles remaining on the inner wall of the vacuum vessel 10 from scattering. This pre-coat is for forming a pre-coat film on the inner wall of the vacuum vessel 10. For example, in the case of forming a SiO ₂ film or the like, the pre-coat film is a SiO ₂ film or a SiF ₄ film. And the like.

[0007]

SUMMARY OF THE INVENTION By the way, SiO ₂
The film has a dielectric constant of about “4”, and the SiOF film has a dielectric constant of “3.
5 ”, but in recent years the demand for high-speed devices has increased,
Accordingly, an interlayer insulating film having a low dielectric constant is required.
Therefore, as such an interlayer insulating film having a low dielectric constant,
A fluorine-added car that can achieve a dielectric constant of "2.5" or less
Attention has been paid to a Bon film (hereinafter referred to as a CF film).

This CF film can also be formed by the above-described plasma processing apparatus. However, if a pre-coat film is formed of a SiO ₂ film, a SiF ₄ film, or the like during the CF film formation process, the pre-coat film is formed. Source gas for CF film, for example, C such as C ₄ F ₈ gas
There is a problem that particles are likely to be generated by reacting with the F-based gas, and there are many unknown parts in the precoat when the CF film is formed.

The present invention has been made under such circumstances, and an object of the present invention is to reduce the number of particles inside a processing apparatus so that a stable film forming process can be performed on an object to be processed. It is to provide a possible processing method .

[0010]

Means for Solving the Problems The present invention for this purpose is given
Fluorine-added car adhering to the inner wall of the processing equipment
The cleaning film is removed by introducing a cleaning gas into the processing equipment.
Cleaning process, followed by cleaning inside the processing equipment.
Introduce recoat gas to hydrogenate the inner wall of the processing equipment
A pre-coating step of forming an amorphous carbon film,
Thereafter, a processing gas is introduced into the processing apparatus,
Fluorine-added carbon is added to the object to be processed
And a film forming step of forming a film. This
Here, as the precoat gas, CkHs gas (k, S
Is an integer).

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the processing method of the present invention will be described. First, a processing apparatus in which the method of the present invention is performed
An example of a location will be described with reference to FIG. This processing apparatus is a plasma processing using ECR (Electron Cyclotron Resonance).
It is a physical device. In the figure, reference numeral 2 denotes a vacuum container formed of, for example, aluminum or the like. The vacuum container 2 is located above and has a cylindrical plasma chamber 21 for generating plasma.
A lower part of the plasma chamber 21 is connected to and connected to the lower part of the plasma chamber 21.

The upper end surface of the vacuum vessel 2 is constituted by a transmission window 23 for transmitting microwaves. On the upper surface of the transmission window 23, for example, 2.45 GH
A waveguide 31 for supplying microwaves of z is provided, and the other end of the waveguide 31 is connected to a microwave oscillator 32. In this example, the waveguide 31 and the microwave oscillator 32 constitute a high-frequency supply unit.

A ring-shaped main solenoid coil 33 (hereinafter referred to as a main coil 33) is arranged near the outer periphery of the side wall defining the plasma chamber 21 as magnetic field forming means in close proximity to the side wall. For example, a magnetic field of 875 gauss can be formed from above to below. A ring-shaped sub solenoid coil 34 (hereinafter, referred to as a sub coil 34) is disposed below the bottom wall of the film forming chamber 22.

On the side walls that partition the plasma chamber 21,
The plasma gas nozzles 24 are provided evenly along the circumferential direction. A plasma gas source and a cleaning gas source (not shown) are connected to the nozzle 24 so that the plasma gas and the cleaning gas can be uniformly supplied to the upper portion in the plasma chamber 21. Although only two nozzles 24 are shown in the figure to avoid complication of the drawing, more nozzles 24 are actually provided.

On the other hand, in the film forming chamber 22, a film forming gas or a pre-processing
A ring-shaped gas ring 25 having a gas outlet 25a for introducing a gas therein is provided, and a film gas source and a pre-coat gas source (not shown) are connected to the gas ring 25. A mounting table 4 for mounting a substrate to be processed, for example, a semiconductor wafer W (hereinafter, referred to as a wafer W), is provided at substantially the center of the film forming chamber 22 so as to be able to move up and down. The mounting table 4 includes a ceramic body 4 having a heater built in a main body 41 formed of, for example, aluminum or the like.
2 and the mounting surface is configured as an electrostatic chuck. Further, the ceramic electrostatic chuck 42 of the mounting table 4
Has a built-in electrode 43 for applying a bias for drawing ions into the wafer W. The electrode 43 is connected to, for example, a high-frequency power supply 44 for drawing plasma. Furthermore, an exhaust port (not shown) is formed at the bottom of the film forming chamber 22.

Next, a description will be given of a plasma processing method of the present invention performed by the above-described apparatus. First, the process of forming a CF film will be described. A wafer W having, for example, an aluminum wiring formed on its surface is carried in from a load lock chamber (not shown) and is mounted on the mounting table 4. Then vacuum container 2
Is evacuated to a predetermined degree of vacuum, and plasma gas, for example, A gas is introduced from the plasma gas nozzle 24 into the plasma chamber 21.
r gas is introduced at a flow rate of 150 sccm, and a film forming gas such as C ₄ F ₈ is introduced into the film forming chamber 22 from the gas ring 25.
The gas and C ₂ H ₄ gas were supplied at a flow rate of 60 sccm and 30 sccm, respectively.
Introduce at sccm. Then, the inside of the vacuum vessel 2 is maintained at, for example, a process pressure of 0.2 Pa, and the mounting table 4 is set to 13.5.
A bias voltage of 6 MHz and 1500 W is applied, and the surface temperature of the mounting table 4 is set to 320 ° C.

2.45 GH from microwave oscillator 32
The high frequency (microwave) of z is conveyed through the waveguide 31, passes through the transmission window 23, and is introduced into the plasma chamber 21.
In the plasma chamber 21, a mirror magnetic field generated by the main coil 33 and the sub-coil 34 is applied with a strength of 875 gauss, and the interaction between the magnetic field and the microwave generates electron cyclotron resonance. By A
The r gas is converted into plasma and the density is increased.

[0018] flowed plasma flow to the plasma chamber deposition chamber 22 than 21 activates C ₄ F ₈ gas and C ₂ H ₄ gas is supplied here (plasma) is not in the active species
(Plasma) is formed. On the other hand, the active species transported onto the wafer W is formed as a CF film. At this time, the A drawn into the wafer W by the bias voltage for plasma attraction.
The r ions scrape off the CF film formed at the corners of the pattern on the surface of the wafer W by sputter etching, and form a CF film from the bottom of the pattern groove while widening the frontage.
The CF film is buried in the recess without voids.

[0019] Subsequently dividing line after the film formation process chestnut -
The ning step will be described. When a predetermined film forming process is performed on the wafer W, the CF also reaches a place where the film forming gas reaches, for example, around the wafer W on the surface of the mounting table 4, an outer peripheral portion of the mounting table 4, and around the gas outlet 25 a. The film adheres. Cleaning is a process performed to remove the CF film adhered to the inside of the vacuum vessel 2 as described above.
For example, it is performed after performing film forming processing on 12 wafers W.

Specifically, after unloading the twelfth wafer W from the vacuum vessel 2, a cleaning gas, for example, O ₂ gas is introduced into the plasma chamber 21 from the plasma gas nozzle 24 at a flow rate of, for example, 200 sccm, and A microwave of 2.45 GHz is introduced from the oscillator 32 and, for example, the main coil 33 is operated to generate a magnetic field of 875.
This is done by applying a Gaussian intensity.

In this manner, electron cyclotron resonance occurs in the interior of the film forming chamber 22 due to the interaction between the magnetic field and the microwave, and the resonance turns the O ₂ gas into plasma and increases the density. Then, active species of O, such as O radicals and ions, generated by the plasma, react with the CF film attached to the gas outlet 25a and the periphery of the mounting table 4, and convert the CF film into, for example, CO ₂ gas or F ₂ gas. It is decomposed and scattered, and removed to the outside of the film forming chamber 22 through an exhaust port (not shown).

Then, it is performed after the cleaning step.
A pre-coating step, which is a pre-treatment film forming step, will be described. In the pre-coating step, a pre-coat film is formed on the inner wall of the vacuum vessel 2 described above. Specifically, after the cleaning is completed, a CF gas such as C ₄ F ₈ gas and C
₂ H ₄ gas is introduced at a flow rate of 60 sccm and 30 sccm, respectively. A plasma gas, for example, Ar gas is introduced at a flow rate of 150 sccm from the plasma gas nozzle 24, and a microwave of 2.45 GHz is introduced from the microwave oscillator 32, for example. This is performed by operating the coil 33 and applying a magnetic field with a strength of 875 gauss.

In this manner, electron cyclotron resonance occurs in the interior of the film forming chamber 22 due to the interaction between the magnetic field and the microwave, and the resonance converts the plasma gas into plasma and increases the density. Then, the plasma flow flowing from the plasma chamber 21 into the film formation chamber 22 activates the pre-coat gas supplied thereto to form active species, thereby forming a 2 μm-thick film on the inner wall of the vacuum vessel 2. CF film by Li Cheng path - thin film der for the tickle prevent the occurrence
A precoat film is formed.

After the pre-coating process is performed in this manner, the wafer W is loaded into the vacuum vessel 2 and mounted on the mounting table 4, and the above-described CF film forming process is performed.

In the present embodiment, the following effects are obtained because the pre-coating step is performed using a CF-based gas after the cleaning step. First, scattering of particles can be prevented during the film forming process. That is, when the cleaning is performed, as shown in FIGS. 2A and 2B, most of the CF film M adhered to the inner wall of the vacuum vessel 2 is removed.
A small amount of particles PT remain on the inner wall surface. This is because when the CF film M is left behind during cleaning or when the CF film M containing aluminum or nitrogen is originally attached to the inner wall of the vacuum vessel 2, the cleaning is performed.
This is because these aluminum and nitrogen cannot be removed even by polishing.

When pre-coating is performed in such a case,
Since the precoat film PM is formed so as to confine the particles PT on the inner wall surface of the vacuum vessel 2, the subsequent CF
The scattering of particles during the film forming process is suppressed.
That is, in the present embodiment, the precoat film is formed of a film having a composition close to that of the CF film formed on the wafer W. For example, the precoat film is formed on the inner wall surface of the vacuum vessel 2 as shown in FIG. A film is formed.

Since this film is similar in composition to the CF film formed as described above, it does not react with the film forming gas during the film forming process. The gas reacts with the precoat film PM to generate particles,
The particles PT adhered to the inner wall surface due to the removal of the precoat film PM are prevented from scattering. On the other hand, for example, when a precoat film is formed of a SiO ₂ film (see FIG. 3B), this film easily reacts with a CF-based gas which is a film forming gas of the CF film during the film forming process. Therefore, particles are easily generated.

Second, the quality of the CF film formed on the wafer W in the depth direction in the film forming process can be made uniform.
That is, if the film forming process is performed immediately after the completion of the cleaning, a CF film is formed on the inner wall surface of the aluminum in the vacuum vessel 2 in the initial stage of the process, and a film forming gas which easily reacts with the aluminum is consumed. Would. Therefore C ₄
Since the composition ratio of the film forming gas changes due to a change in the flow rate ratio between the F ₈ gas and the C ₂ H ₄ gas, the film quality of the CF film formed on the wafer W, particularly in the depth direction, in the initial stage of the processing and thereafter. The film quality changes.

On the other hand, if a pre-coating step is performed after the cleaning, a pre-coating film made of a CF film is formed on the inner wall of the vacuum vessel 2 in advance in this step. -A CF film will be formed on the upper surface of the gate film. However, as shown in FIG.
When a film is formed, the precoat film itself has a composition close to that of the CF film formed on the wafer W. Therefore, even when the film is formed on the surface of the precoat film, the film is formed on the wafer W. In this case, it is considered that the film forming gas is consumed in the same manner. Therefore, as in the case where a film is formed on the surface of aluminum, C ₄ F
_Since there is no possibility that the flow ratio of the ₈ gas and the C ₂ H ₄ gas changes, the composition of the film forming gas does not change between the initial stage and the subsequent stages of the processing.
The film quality of the F film, particularly in the depth direction, can be made uniform.

Third, during the film forming process, the CF film formed on the inner wall surface of the vacuum vessel 2 can be prevented from peeling off. That is, if the film forming process is performed after the cleaning, the CF film M is formed on the inner wall surface of the vacuum vessel 2 as described above. Here, the adhesion between the inner wall surface of aluminum and the CF film M is low. If the processing proceeds and the amount of the CF film M attached increases, the CF film M may come off from the inner wall surface. When the CF film M is peeled in this way, it causes particles, and the particles PT originally attached to the inner wall surface appear and scatter.

On the other hand, if a pre-coating step is performed after the completion of the cleaning, a pre-coating film made of a CF film is previously formed on the inner wall of the vacuum vessel 2 in this step. -A CF film will be formed on the upper surface of the gate film. Here, the conditions of the precoating and the conditions of the film forming process are different, and the film quality of the formed film is different. Therefore, at the time of the precoating, the precoating film is formed on the inner wall surface of the vacuum vessel 2 made of aluminum. Even so, the adhesion of the pre-coat film to aluminum is larger than that of the CF film formed on the inner wall surface during the film forming process. During the film forming process, a CF film is formed on the upper surface of the pre-coat film. However, since the pre-coat film and the CF film have originally high adhesion, there is no possibility that film peeling occurs between the two. By performing the pre-coating in this manner, film peeling can be suppressed, so that generation of particles due to film peeling can be suppressed.

Here, an example of an experiment performed to confirm the effect of the present embodiment will be described. The plasma processing apparatus shown in FIG.
At 00 W and a pressure of 0.2 Pa, C ₄ F ₈ gas and C ₂ H ₄ gas were introduced as pre-coat gases at a flow rate of 60 sccm and 30 sccm without applying high frequency power, and Ar gas was introduced as a plasma gas at 150 sccm. To form a precoat film PM of 2 μm.

Thereafter, under microwave power of 2700 W, high frequency power of 1500 W, and pressure of 0.2 Pa, C ₄ F ₈ gas and C ₂ H ₄ gas were used as film-forming gases at 60 sccm each.
By introducing Ar gas as a plasma gas at a flow rate of 150 sccm while introducing a CF film at a flow rate of 30 sccm, a CF film is formed on the wafer W having an 8-inch size.
Formed 5 μm and analyzed by XPS (X-ray Photo
Spectroscopy) was used to measure the uniformity of the CF film formed on the wafer W in the depth direction. Even when pre-coating was not performed, a CF film was formed on the wafer W under the same conditions, and XPS analysis was performed.
These results are shown in FIGS. 4 and 5, respectively.

In FIGS. 4 and 5, 1S in the CF film is used.
The atomic concentration of C (carbon) and F (fluorine) in the orbit in the depth direction of the CF film is as follows: the atomic concentration of C is □, and the atomic concentration of F is
Each of the circles is indicated by a circle, and the depth of the CF film in the figure is “1” as the outermost surface, and is shown to become deeper as approaching “0”. From this result, when pre-coating is not performed (see FIG. 5), the C concentration increases as the CF film depth increases, and the F concentration decreases.
When the precoating was performed, it was confirmed that the C concentration and the F concentration in the CF film were constant even when the depth of the CF film was increased, whereby the precoating was performed (see FIG. 4). Was confirmed to improve the uniformity of the CF film in the depth direction.

Subsequently, after performing a pre-coating under the same conditions as in the previous experimental example, a CF film is formed on the 12 wafers W under the same conditions as in all the experimental examples, and is present on the wafer W. 0.
The amount of particles having a size of 25 μm or more was measured by a wafer foreign matter inspection device. Also in the case where pre-coating was not performed, the film formation processing of the wafer W was similarly performed, and the amount of particles was measured. These results are shown in FIGS.
Are shown below.

6 and 7, the horizontal axis represents the wafer W.
From the results, it is confirmed that the amount of particles up to the second wafer W is extremely smaller when pre-coating is performed than when no pre-coating is performed. It was confirmed that when pre-coating was performed, the amount of generated particles was considerably reduced.

As described above, in the present embodiment, the vacuum vessel 2
Since the amount of particles in the substrate can be reduced, stable processing can be performed on the substrate to be processed in the subsequent film forming process.

Next, still another embodiment of the present invention will be described. This embodiment is different from the embodiment described above, the double bond or triple bond of the gas e.g. C2F2 gas or C2F4 gas or a flop Rikotogasu molecular four CF group at one C bonded structure Gas, eg C
(CF3) 4 gas and C (C2 F5) is to use a 4 gas. Use of such a gas as the precoat gas has the effect of reducing the amount of generated particles.

Here, an experimental example performed to confirm the effect of the present embodiment will be described. The plasma processing apparatus shown in FIG.
At a pressure of 00 W and a pressure of 0.2 Pa, without applying high frequency power, 60 sccm of C ₂ F ₄ gas was used as a precoat gas.
And an Ar gas as a plasma gas at a flow rate of 200 sccm, and the precoat film PM was introduced.
Was formed at 2 μm.

Thereafter, under microwave power of 2700 W, high frequency power of 1500 W and pressure of 0.2 Pa, a C ₄ F ₈ gas and a C ₂ H ₄ gas as film-forming gases were respectively supplied at 60 sccm.
By introducing an Ar gas as a plasma gas at a flow rate of 150 sccm at a flow rate of 30 sccm and a
5 μm was formed. This film forming process was performed on 60 wafers W, and the amount of particles having a size of 0.25 μm or more present on the wafers W was measured by a wafer foreign matter inspection device.

At a microwave power of 2000 W, a high frequency power of 2000 W and a pressure of 0.3 Pa, a SiH ₄ gas was introduced as a precoat gas at a flow rate of 80 sccm, and O ₂ gas and Ar gas were respectively used as a plasma gas at a flow rate of 100 sccm. By introducing at a flow rate of 200 sccm, a SiO ₂ film was formed as a pre-coat film by 1.0 μm.
Also in the case of the formation, the film formation processing of the wafer W was similarly performed, and the amount of particles was measured. These results are shown in FIG.
Shown in

In FIG. 8, the number of processed wafers W is shown on the horizontal axis. From this result, when precoating was performed with C ₂ F ₄ gas (indicated by □ in the figure) , SiH ₄ gas was introduced. When forming a precoat film made of SiO ₂ film by
It was confirmed that the amount of particles was extremely reduced as compared with (shown by ○ in the figure) .

The reason is considered as follows. That is, when a precoat film made of a SiO ₂ film is formed, the precoat film easily reacts with the film forming gas as described above. As a result, particles are generated by this reaction, and the precoat film is formed. It is considered that the film is peeled off from the inner wall surface of the vacuum vessel 2 to cause particles, or the pre-coated film is removed and particles adhered to the inner wall surface are scattered. As a result, the amount of particles increases. Inferred.

On the other hand, when pre-coating is performed by using C ₂ F ₄ gas, as shown in FIG. 9, for example, the CC bond of the pre-coat film is formed in a three-dimensional network, ie, CC As a result, the precoat film becomes dense and strong. Therefore, as described above, the precoat film originally does not easily react with the film forming gas, but the film becomes more difficult to react by forming a CC network structure. It is considered that the generation of particles due to the reaction with the gas is suppressed.

In the CF film, the adhesion tends to increase as the amount of C increases. However, in the above-described network structure, the amount of C increases. Adhesion is increased. Therefore, the precoat film is less likely to be peeled off from the inner wall surface of the vacuum vessel 2, and it is considered that the generation of particles due to the film peeling is also suppressed. Therefore, when pre-coating is performed using C ₂ F ₄ gas, it is presumed that the generation of particles can be greatly reduced due to the synergistic effect of these.

As described above, in this embodiment, the vacuum vessel 2
Since the amount of particles in the substrate can be greatly reduced, more stable processing can be performed on the substrate to be processed in the subsequent film forming process.

Next, still another embodiment of the present invention will be described. This embodiment is different from the above-described embodiment in that the precoat film is formed of an aC : H film (hydrogenated amorphous carbon, hereinafter referred to as “aC film”). At this time, the a-C film is made of C _k H _s gas (k and s are integers) alone or C _k Hs gas as a precoat gas.
Is formed by using a H _s gas + H ₂ gas, thus precompiler - With a-C film as a preparative film, precompiler - DOO film and increase the adhesion between the inner wall surface of the vacuum vessel 2, the generation of particles The effect is that the amount is reduced.

Here, an experimental example performed to confirm the effect of the present embodiment will be described. The plasma processing apparatus shown in FIG.
Under a pressure of 00 W and a pressure of 0.3 Pa, without applying high frequency power, 100 scc of C ₂ H ₄ gas was used as a precoat gas.
m, and an Ar gas as a plasma gas at a flow rate of 300 sccm.
M was formed at 2 μm.

Thereafter, under microwave power of 1500 W, high frequency power of 1500 W, and pressure of 0.2 Pa, C ₄ F ₈ gas and C ₂ H ₄ gas were used as film-forming gases at 60 sccm respectively.
By introducing an Ar gas as a plasma gas at a flow rate of 150 sccm at a flow rate of 30 sccm and a
5 μm was formed. This film forming process was performed on 40 wafers W, and the amount of particles having a size of 0.25 μm or more existing on the wafers W was measured by a wafer foreign matter inspection device.

At a microwave power of 2000 W, a high frequency power of 2000 W and a pressure of 0.3 Pa, SiH ₄ gas was introduced as a precoat gas at a flow rate of 80 sccm, and O ₂ gas and Ar gas were supplied as a plasma gas at a flow rate of 100 sccm, respectively. By introducing at a flow rate of 200 sccm, a SiO ₂ film was formed as a pre-coat film by 1.0 μm.
Also in the case of the formation, the film formation processing of the wafer W was similarly performed, and the amount of particles was measured. Figure 1 shows these results.
0 is shown.

In FIG. 10, the number of processed wafers W is plotted on the horizontal axis.
When a coated film is formed (indicated by □ in the figure) , a precoat film made of SiO ₂ film is formed (indicated by ○ in the figure)
It was confirmed that the amount of particles was significantly reduced as compared with. The reason is considered as follows.
That is, when a pre-coat film made of an SiO ₂ film is formed, the pre-coat film and the film-forming gas easily react as described above, and as a result, it is presumed that the amount of particles increases due to this reaction. You.

On the other hand, when a precoat film made of an aC film is formed, the aC film has a similar composition to the CF film formed on the wafer W, and thus reacts with the film forming gas. Difficult,
The generation of particles due to the reaction with the film-forming gas is suppressed, and the aC film has high adhesion to the inner wall surface of the vacuum vessel 2 made of aluminum. For this reason, the pre-coat film is less likely to be peeled off from the inner wall surface of the vacuum vessel 2, and the film is not peeled off for a long time, so that it is considered that the generation of particles due to the film peeling is suppressed. Therefore, a-C
It is presumed that when a precoat film made of a film is formed, the generation of particles can be greatly reduced.

As described above, in this embodiment, the vacuum vessel 2
Since the amount of particles in the substrate can be greatly reduced, more stable processing can be performed on the substrate to be processed in the subsequent film forming process.

In accordance with the present invention, it is possible to reduce the internal particle processing apparatus, it is possible to perform a stable plasma processing to be processed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of a plasma processing apparatus for performing a method of the present invention.

FIG. 2 is an explanatory diagram for explaining an operation of the exemplary embodiment of the present invention.

FIG. 3 is an explanatory diagram for explaining an operation of the exemplary embodiment of the present invention.

FIG. 4 is a characteristic diagram showing a relationship between an atomic concentration and a depth of a CF film for showing a result of an experimental example performed to confirm an effect of the embodiment of the present invention.

FIG. 5 is a characteristic diagram showing the relationship between the atomic concentration and the depth of a CF film for showing the results of an experimental example performed to confirm the effects of the embodiment of the present invention.

FIG. 6 is a characteristic diagram showing the relationship between the amount of particles and the number of processed wafers to show the results of an experimental example performed to confirm the effects of the embodiment of the present invention.

FIG. 7 is a characteristic diagram showing the relationship between the amount of particles and the number of processed wafers to show the results of an experimental example performed to confirm the effects of the embodiment of the present invention.

FIG. 8 is a characteristic diagram showing the relationship between the amount of particles and the number of processed wafers to show the results of an experimental example performed to confirm the effects of another embodiment of the present invention.

FIG. 9 is an explanatory diagram for explaining an operation of another embodiment of the present invention.

FIG. 10 is a characteristic diagram showing a relationship between a particle amount and the number of processed wafers to show the results of an experimental example performed to confirm the effects of still another embodiment of the present invention.

FIG. 11 is a sectional view showing a conventional plasma processing apparatus.

[Explanation of symbols]

 2 Vacuum container 21 Plasma chamber 22 Film formation chamber 4 Mounting table M CF film PT Particle

Continuing on the front page (72) Inventor Masaki Tozawa 1-2-1, Machiya, Shiroyamacho, Tsukui-gun, Kanagawa Prefecture Inside the Sagami Office of Tokyo Electron Tohoku Co., Ltd. (72) Inventor Risa Nakase 1-2-1, Machiya, Shiroyamacho, Tsukui-gun, Kanagawa Prefecture No. 41 Tokyo Electron Tohoku Co., Ltd. Sagami Office (72) Inventor Masahide Saito 5-3-6 Akasaka, Minato-ku, Tokyo Inside Tokyo Electron Co., Ltd. (56) References JP-A-4-345030 (JP, A) JP-A-6-20975 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/31 H01L 21/312 C23C 16/44

Claims (2)

(57) [Claims] (1)Adhered to the inner wall of processing equipment by the specified process
Cleaned fluorine-added carbon film into processing equipment
Cleaning process for introducing and removing gas gas; After that, pre-coat gas is introduced into the processing equipment,
A hydrogenated amorphous carbon film is formed on the inner wall of the processing equipment.
A pre-coating step of forming a film, Thereafter, a processing gas is introduced into the processing apparatus,
Fluorine-added carbon is added to the object to be processed
A film forming step of forming a film.
Method. 2. The method according to claim 1, wherein the precoat gas is a CkHs gas.
2. The method according to claim 1, wherein (k, S are integers).
Processing method.