JP3319257B2 - Thin film tensile test method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film tensile test method and apparatus, and more particularly to a method and apparatus for performing a tensile test on a thin film test piece having one end fixed on a substrate and the other end being a free end.

[0002]

2. Description of the Related Art In recent years, various sensors typified by acceleration sensors have been used in various industrial fields, for example, for use in mounting on automobiles. In a silicon sensor device, a technique using a thin film as a structural material by surface micromachining has attracted attention. This is because this method facilitates miniaturization of a structure for detecting acceleration, integration of a detection circuit, and improvement in sensitivity can be expected.

When such a sensor is put into practical use, it is, of course, necessary to improve the mechanical strength of the thin film structure by evaluating the reliability of the thin film structure and examining the relationship between the reliability and the film forming method. However, at present, no standard measurement method is defined, and there are few examples in which the strength of a thin film material is actually measured. In the past, strength measurements such as destructive tests by pressurization of thin film membranes and indentation or scratch tests of hardness test indenters have been performed, but the strength values obtained from these tests have a shape effect. Since it has a large effect, it is difficult to compare with the bulk material strength and clarify the relationship with the film structure. For these reasons, it is desired to perform a tensile test, which is typically used in a bulk material test, on a thin film.

FIG. 13 is a diagram showing three conventional methods for fixing a thin film test piece formed on a wafer in order to carry out a tensile test. FIG. 2A shows a wafer and a thin film test piece formed thereon, and the three methods are shown in FIGS. Each of these methods is as follows.

(1) A test piece is removed from a substrate and both ends are chucked by a thin film portion. (2) One end of the test piece is removed from the substrate, and the other end is fixed to a wafer. One end chucks the thin film and the other end chucks the wafer. (3) The wafer is separated by etching or the like while both ends are fixed to the substrate, and the chuck is performed with the wafer fixed.

[0006]

However, a thin film test piece (hereinafter, also simply referred to as a "test piece") is very small and is broken by a small force (for example, several g). Is accompanied.

In the method (1), since the test piece is directly handled, there is a great possibility that the test piece will be broken before being attached to the test apparatus. In addition, since the thin film is directly chucked, this portion is particularly fragile, and it is extremely difficult to use a chucking method with a bulk test piece, that is, a method of mechanically sandwiching or hooking with a pin. Although there is a method of bonding test pieces, it is not suitable for testing a large number of samples because the test pieces are difficult to remove. Such a situation is the same in the case of the above (2) in which one end of the thin film is directly chucked.

On the other hand, in the method (3), since the wafer is fixed to both ends of the test piece, the test piece is easily broken by the weight of the wafer. Therefore, also in this case, it is very difficult to handle the test piece.

SUMMARY OF THE INVENTION The present invention has been made in view of these problems, and has as its object to handle a thin and fragile test piece having a film thickness of several μm and to conduct a thin film tensile test for facilitating attachment and detachment to an apparatus. It is to provide a method and an apparatus. At this time, there is disclosed a chucking method in which one end of a test piece is fixed on a substrate, the other end is a free end, and the free end is attracted and fixed by electrostatic force.

[0010]

The thin film tensile test method according to the present invention is applied to a case where one end of a test piece is formed on a substrate and the other end is formed as a free end. Is done. In this method, a test piece is supported on a substrate like a cantilever. At this time, in the present invention, the free end is attracted and fixed to the suction means by electrostatic force, and in this state, the distance between the substrate and the suction means is widened in a direction in which a tensile load is applied to the test piece. A tensile test is performed by applying a tensile load to the sample and measuring the magnitude of the tensile load. "Adsorption means" is a member having an adsorption surface,
For example, a conductor is used. The fixed end moves with the substrate, while the free end moves with the suction means. The suction state of the suction means and the free end is maintained by appropriate selection of the magnitude of the electrostatic force and the frictional force on the suction surface. In this embodiment, for example, the breaking strength is determined by measuring the magnitude of the tensile load when the test piece breaks.

According to this aspect, unlike a conventional mechanical chuck, chucking is performed by electrostatic force. Since the generation (and extinction) of the electrostatic force does not involve mechanical movement, the risk of breakage of the test piece during the operation can be greatly reduced. Further, since there is no need to leave a wafer or the like on the free end side, damage due to the weight of the wafer can be virtually eliminated.

On the other hand, a thin-film tensile test apparatus of the present invention is an apparatus for performing a tensile test on a test piece having one end fixed on a substrate and the other end being a free end. A test suction means for fixing, an electrostatic force generating means for generating an electrostatic force between the test suction means and a test piece to suck the test piece, and the substrate in a state where the test piece is sucked. A test piece driving section for applying a tensile load between the test suction means, and a tensile load measuring section for measuring the magnitude of the tensile load. The operation principle and effect of this configuration are the same as those of the above-described thin film tensile test method.

When the material of the test piece is a conductor,
The test suction means is a conductor having an insulating film formed at least on a contact surface between the test piece and the test piece, and the electrostatic force generating means applies a voltage between the test piece and the conductor. Alternatively, an electrostatic attractive force may be generated between the two. The electrostatic force generating means includes a power supply device or applies a voltage supplied from a power supply device provided outside the present device to a test piece and a conductor which are conductors. According to this aspect, the electrostatic force generating means can be easily configured.

In one aspect of the apparatus of the present invention, when the test piece material is a dielectric, a pair of test electrodes are formed on a contact surface of the test suction means with the test piece, and the electrostatic force generating means is provided. Applies a voltage between the electrodes. At this time, an electric field generated by a voltage applied between the electrodes exerts an electrostatic attraction on the test piece, which is a dielectric, and attracts the test piece. According to this aspect, a configuration for applying a voltage to the test piece itself becomes unnecessary.

Further, an insulating film is formed on a surface of the test electrode, and the electrostatic force generating means applies a voltage between the electrodes. At this time, regardless of whether the electric field generated by the voltage applied between the electrodes is a conductor or a dielectric, an electrostatic force is applied to the test piece and the test piece is adsorbed. According to this aspect,
Even if it is a conductor test piece, a configuration for applying a voltage to the test piece itself becomes unnecessary.

One embodiment of the apparatus according to the present invention includes a suction means for collecting the test piece when the test piece is broken by a tensile load, wherein the electrostatic force generating means applies the broken test piece to the test suction means. , And generates an electrostatic force for adsorbing it to the collection adsorption means. The collection suction means is also a member having a suction surface, and may be, for example, a conductor. According to this aspect, the test piece can be efficiently collected after the fracture.

The test piece and the suction means for testing are conductors,
When the electrostatic force generating means applies a voltage between the test piece and the conductor to generate an electrostatic attraction, the apparatus further includes:
When the test piece is broken by a tensile load, it includes a suction means for recovery that sucks the test piece, and the suction means for recovery,
A conductor having an insulating film formed on at least a contact surface between the means and the test piece may be used. At this time, the electrostatic force generating means keeps the thin film test piece and the collecting suction means at the same potential before breaking the thin film test piece, and after the thin film test piece breaks, the test suction means and the collecting Between the suction means
A voltage of the opposite polarity to that before the break is applied.

Here, suppose that the means for generating electrostatic force before the fracture is: 1. High potential for the adsorption means for testing Suppose that the recovery adsorption means and the test piece were each kept at a low potential. If the test piece breaks in this state, much negative charge is left on the test piece after the break. On the other hand, after the rupture, the opposite polarity voltage causes: 1. The test adsorption means has a low potential. The recovery means becomes high potential. As a result, an electrostatic repulsion acts between the fractured test piece and the test suction means, and these are separated. On the other hand, an electrostatic attraction acts between the broken test piece and the collecting suction means,
The test piece is efficiently collected by the adsorption means for collection.

A pair of test electrodes are formed on a contact surface of the test suction means with the test piece, and the electrostatic force generating means applies an electric voltage between the electrodes to generate an electrostatic attraction for sucking the test piece. In the case where the test piece is generated, as another embodiment, the apparatus includes a collection suction means for sucking the test piece when the test piece breaks due to a tensile load, and the collection suction means includes a pair of collection electrodes. including. In this case, after the test piece is broken, the electrostatic force generating means stops applying a voltage between the test electrodes and starts applying a voltage between the collection electrodes. The test piece is drawn to the test electrode before breaking, but is drawn to the collecting electrode after breaking, so that efficient recovery is possible.

In one aspect of the apparatus of the present invention, the length of the substrate is longer than a distance between both ends of the thin film test piece, and the thin film test piece is arranged substantially parallel to the substrate surface. At this time, the substrate more easily protects the entire test piece than the conventional substrate.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a thin film tensile test apparatus according to the present invention will be described with reference to the drawings. From the description of this apparatus, the contents of the thin film tensile test method of the present invention will be clear.

Embodiment 1 [1] Configuration of Apparatus FIG. 1 is an overall configuration diagram of a thin-film tensile test apparatus according to Embodiment 1. The thin film tensile test device 10 includes an observation device 12 for positioning a test piece and observing a tensile test.
As an observation device, an optical microscope, an electron microscope, or the like is used. For example, a test piece 14 which is a metal film such as a silicon film or aluminum.
One end is fixed to the substrate 16, and the substrate 16 is fixed to the upper part of the test piece driving unit 18. The lower portion of the test piece driving section 18 is fixed to a base 26 of the apparatus. Test piece drive unit 1
Reference numeral 8 is installed so as to be driven in the direction of an axis that applies a tensile load to the test piece 14. A method for forming the test piece 14 on the substrate 16 will be described later.

The probe 20 attracts and fixes the test piece 14 by electrostatic attraction, and is connected to a load measuring unit 22. The load measuring unit 22 is fixed to a stage 24 for positioning the probe 20 and the test piece 14. The positioning stage 24 is a screw feed stage driven by a stepping motor (not shown). As described later, a force sensor using a strain gauge is used for the load measuring unit 22.

In this configuration, an actual test is performed by applying a tensile load to the test piece 14 by the test piece drive unit 18 in a state where the test piece 14 is sucked. As the load increases, the test piece 14 breaks at a certain moment. At this time, the displacement applied to the test piece 14 is measured by the test piece drive unit 18 by the method described later, and the magnitude of the load is measured by the load measurement unit 22 to determine characteristics such as tensile strength.

FIG. 2 is a view showing the structure and operation of the test piece driving section 18. As shown in FIG. As shown in FIG.
Projections 30, 31 extend from above and below the stage, and a laminated piezoelectric element 32 is fitted between them. By applying a voltage to the laminated piezoelectric element 32, an axial tensile load is applied to the test piece 14. A semiconductor strain gauge 34 is attached on a parallel leaf spring formed on the side surface of the stage. The shape of the laminated piezoelectric element 32 is 5 ×
5 × 18mm, 2 as full scale of stage displacement
0 μm is adopted. The grounds for selecting numerical values such as the shape will be described in [5]. The numerical parameters appearing thereafter are mere examples, and the optimum numerical value may be determined according to the design.

FIG. 2B shows the stage displacement of the test piece driving unit 18 when the laminated piezoelectric element 32 to which the voltage is applied is extended. Since the lower part of the stage is fixed to the pedestal 26, the protrusion 31 extending from the lower part of the stage is not much displaced, and the protrusion 30 extending from the upper part of the stage is displaced by being pushed leftward in the drawing. For this reason, the test piece 14 is pulled, and the displacement at this time is measured by the semiconductor strain gauge 3.
4 accurately measured.

FIG. 3 is a diagram showing the configuration of a force sensor used in the load measuring section 22. As shown in the figure, the center shaft 40 is supported by two pairs of leaf springs 42. The minute probe 20 is attached to the tip of the central shaft 40. A semiconductor strain gauge 44 is attached on the leaf spring 42, and the load applied to the test piece 14 is measured from the distortion of the leaf spring due to the displacement of the shaft. The width of the leaf spring is 2 mm, the length is 3 mm, the plate thickness is 0.2 mm, the sensitivity of the force sensor is 0.44 mV / g, and the rigidity is 0.24 μm / g.

FIG. 4 is an enlarged view of the test piece 14 and the substrate 16. The test piece 14 includes a fixed portion 60 including a fixed end, a test portion 62 that is a portion to be measured for tensile strength, and a chuck portion 64 that is sucked and fixed by the probe 20. The test part 62 has a width w of 2 to 5 μm, a thickness of 2 μm, and a length l of 10 μm.
３００300 μm. Chuck 64 is sized to be to fix the test piece 14 relative to the load during the tensile test, the width w _f is 0.1 mm, length l _f is a 1 mm. The size of the suction surface of the probe 20 is sufficiently larger than the chuck portion 64 of the test piece 14. Since the entire length of the substrate 16 is longer than the distance between both ends of the test piece 14 and the test pieces 14 are arranged in parallel along the surface of the substrate 16, the substrate 16 is
It is shaped to protect the whole.

FIG. 5 is an enlarged view of the vicinity of the probe 20 and the substrate 16. The substrate 16 is formed of a silicon wafer 16a,
An insulator 16b such as a silicon nitride film is formed on the surface.
A silicon wafer 20a is used for the probe 20, and an insulating film 20b such as a silicon oxide film or a silicon nitride film is
Is provided. The thickness of the insulating film 20b is 0.1 to 0.2 μm.

The probe 20, the substrate 16, and the test piece 14
, A required voltage is applied from a power supply device 50 which is a DC power supply. The electrode is a silicon wafer 16a of the substrate 16,
Silicon wafer 20a of probe 20 and test piece 1
4 is provided on the fixing portion 60. The fixing part 60 is fixed to the substrate 16 via an insulating film. When a voltage is applied, the substrate 16 and the test piece 14 have the same potential.

FIG. 6 shows the insulating film 20 on the suction surface of the probe 20.
It is a figure which shows the shape of b. Usually, as shown in FIG.
The insulating film 20b is formed only on the suction surface. However, in this case, dielectric breakdown may occur at the edge of the suction surface. At this time, the insulating film 20b is also formed on the side surface of the silicon wafer 20a as shown in FIG.
In this case, the insulation strength at the edge is increased, and dielectric breakdown can be prevented.

[2] Operation of Apparatus The tensile test is performed in the following procedure. First, the probe 20 is brought closer to the chuck portion 64 of the test piece 14 by the positioning stage 24. After setting the substrate 16 and the test piece 14 at the same potential, a voltage is applied between the probe 20 and the test piece 14. At this time, an electric charge is generated on the chuck portion 64 and the suction surface of the probe 20 and an electrostatic attraction is exerted, whereby the chuck portion 64 is fixed to the probe 20 by suction. Therefore, a mechanical chuck as in the related art is not required, and the risk of breakage of the test piece 14 is reduced.

In this state, a displacement is applied to the test piece driving section 18 and a tensile load is applied to the test piece 14. The test piece 14 eventually breaks. During this time, the test piece 14 and the probe 20 are held by the frictional force between them (the frictional force of the surface attracted by electrostatic force). The amount of feed before breaking (that is, the specimen 14
Elongation) is the semiconductor strain gauge 34 of the test piece driving unit 18.
And the load is recorded by the force sensor of the load measuring unit 22.

After the tensile test, the broken test piece 14 is fixed to the probe 20 by the remaining charge. Therefore, by connecting the switch of the power supply device 50 to the opposite side, a voltage of the opposite polarity is applied between the probe 20 and the test piece 14. As a result, the probe 20 and the test piece 1
4, an electrostatic attraction acts between the substrate 16 and the test piece 14, the test piece 14 comes off the probe 20, and the substrate 1
6 fixed on. Thus, the broken test piece 14 can be easily and reliably recovered.

[3] Strength Analysis of Specimen The breaking strength is obtained from the load at the time of breaking. FIG. 7 shows the relationship between the feed amount and the load when the test piece 14 is subjected to a tensile test. FIG. 3A shows the test section 6 of the test piece 14.
2B is a diagram relating to the test piece 14 in which the length of the test portion 62 is 0, that is, the test piece 14 without the test portion 62 when the film thickness of 2 is 2 μm, the width is 5 μm, and the length is 300 μm.

The slope of the graph in FIG.
Stiffness k _t and the stiffness k _o of the other parts
Show _s . The stiffness k _o includes the stiffness of the test piece 14 other than the test section 62, the stiffness of the test piece drive section 18, and the load measurement section 2.
2 and the like.

On the other hand, the inclination of the graph of FIG.
_o represents itself. Therefore, the rigidity (or Young's modulus) of the test piece 14 can be obtained from these inclinations by using Equation 1.

[0038]

[Number 1] _{1 / k s = 1 / k} t + 1 / k o ( Equation 1) [4] Method of making specimens 14 where the test strip is described how to create on substrate 16. FIGS. 10 and 11 are views showing the steps of preparing the test piece 14.

[Method 1] (FIG. 10) A sacrificial layer 80 is formed as a thin film on the substrate 16 (step 1).
A thin film 81 of a sample to be the test piece 14 is formed on the substrate 16 and processed into the shape of the test piece 14 by photolithography (step 2). While the fixed end of the test piece 14 is not separated from the substrate, the sacrificial layer 80 is removed by etching or the like (Step 3). In the case of this method, the test piece 14 may be once completely separated from the substrate in step 3, and then the fixed end may be fixed on the separately prepared substrate 16 with an adhesive or the like.

[Method 2] (FIG. 11) As the substrate 16, a material having poor adhesion to the sample to be the test piece 14 is used. First, an adhesive layer 84 is formed as a thin film on the substrate 16 (step 1). The adhesive layer 84 is formed on the substrate 16 and the test piece 1.
A material having good adhesion to both materials of No. 4 is adopted. Next, a thin film 81 of a sample to be the test piece 14 is formed (Step 2). At this time, the shape is adjusted using a metal mask or the like. Thereafter, the portion of the adhesive layer 84 becomes a fixed end, and the other portion is easily peeled off to form a free end (step 3).

The above is an example of the creation method. FIG.
Indicates a number of test pieces 14 arranged on a substrate 16. Forming a large number of test pieces 14 on one substrate 16 is easily realized by existing semiconductor manufacturing technology. According to the apparatus of the present invention, the test piece 14
Since no mechanical chuck is required, the tensile test can be easily and continuously performed without breaking these test pieces 14.

[5] Derivation of Parameters The basis of the parameters such as the shape used this time is explained, and other parameters necessary for the test are derived.

In FIG. 4, the thickness of the test section 62 is represented by t. If the load P required for the tensile test, the elongation of the test portion 62 at that time is d _l , the material strength of the test piece 14 is σ _f , the breaking strain is ε _f , and the Young's modulus is E, then P = σ _f wt d written as _{l = lε f = lσ f /} E. Here, σ _f = 3 GPa, E = 150 GP
If a, w = 5 μm, l = 300 μm, and t = 2 μm, the maximum P _max required for the test and d _l (d
_lmax ) is P _max = 30 mN (about 3 g) d _lmax = 6 μm. _Pmax is suitable for the load (several g) at which the test piece 14 aimed at this time breaks, and _dlmax is suitable for the full scale 20 μm of the test piece drive unit 18.

Next, when this load is applied, the test piece 14
Required to prevent the chuck portion 64 from separating from the probe 20. The frictional force F for fixing the test piece 14 and the probe 20 is

[Number 2] _{F = - (με r ε 0} /2) · (w f l f / d 2) is a · V ^2. Here, μ is a friction coefficient, and V is an applied voltage. ε _r and d are the relative permittivity between the electrodes and the distance between the electrodes,
It is replaced by the relative dielectric constant and thickness of the insulating film. ε ₀ is the vacuum permittivity (8.854 × 10 ⁻¹² ). Here, w _f
= 0.1 mm and l _f = 1 mm. The insulating film is Si
Consider two types, O ₂ and Si ₃ N ₄ . The former has a relative dielectric constant of 3.8, and the thickness here is 0.1 μm. On the other hand, the latter has a relative dielectric constant of 8, in which the film thickness is 0.2 μm.
m. In the calculation, the friction coefficient μ was set to 0.3.

By calculating the required voltage under the above conditions,
About 30 V for SiO ₂ , about 40 V for Si ₃ N ₄
V. Therefore, the power supply device 50 of the present embodiment may be provided with a DC power supply whose rating exceeds these values.

Embodiment 2 An embodiment according to a modification of the first embodiment will be described. The description of the same configuration as that of the first embodiment will be omitted, and the modified points will be described.

FIG. 8 is an enlarged view of the vicinity of the probe 20 and the substrate 16 according to the second embodiment. As shown in the figure, two electrodes 70 and 71 are newly provided on the insulating film 20b of the probe 20, and two electrodes 72 and 73 are newly provided on the insulating film 16b of the substrate 16. The electrodes 72 and 73 are laid near the test piece 14. The electrode is formed using a conductive film such as aluminum.

In this configuration, first, a voltage is applied between the electrodes 70 and 71 on the probe 20 side from a power supply device. At this time, the chuck portion 62 of the test piece 14 is attracted and fixed to the probe 20 by electrostatic attraction acting between the test piece 14 and the probe 20. Thereafter, a tensile test is performed in the same procedure as in the first embodiment.

After the test piece 14 breaks, the broken test piece 14 is fixed to the probe 20. Here, the switch of the power supply device 50 is connected in reverse to stop the application of the voltage to the electrodes 70 and 71, and the electrode 7 on the substrate 16 side.
The application of the voltage to 2, 73 is started. As a result, the broken test piece 14 is separated from the probe 20 and the substrate 16
Adsorbed and collected on the side.

The above is the outline of the second embodiment. In this embodiment, the attraction force can be increased by the shape of the electrode. FIG. 9 is a view showing a preferred electrode shape, which is applicable to both the probe 20 side and the substrate 16 side. As shown in the figure, by arranging the electrodes in a comb shape, the attraction force is increased.

[0051]

According to the method and apparatus for testing the tensile strength of a thin film of the present invention, the mechanical chuck is changed to an electrical chuck, so that a microscopic and fragile thin film material can be easily subjected to a tensile test. Further, when the test piece is fixed, damage to the test piece can be reduced. Further, since the test pieces can be easily attached and detached, a large number of test pieces can be formed on the substrate, and these can be continuously tested. With these effects, the conventional problem is solved.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of a thin-film tensile test apparatus 10 according to a first embodiment.

FIG. 2 is a view showing the structure and operation of a test piece driving unit 18;

FIG. 3 is a diagram showing a configuration of a force sensor used in a load measuring unit 22.

FIG. 4 is an enlarged view of a test piece 14 and a substrate 16;

FIG. 5 is an enlarged view of the vicinity of a probe 20 and a substrate 16 according to the first embodiment.

FIG. 6 is a diagram illustrating the shape of an insulating film 20b on the suction surface of a probe 20.

FIG. 7 is a diagram showing a relationship between a feed amount and a load when a test piece 14 is subjected to a tensile test.

FIG. 8 is an enlarged view of the vicinity of a probe 20 and a substrate 16 according to a second embodiment.

FIG. 9 is a view showing a preferred electrode shape in the second embodiment.

FIG. 10 is a view showing a step of preparing a test piece 14;

FIG. 11 is a view showing a step of preparing a test piece 14;

FIG. 12 is a diagram showing a large number of test pieces 14 arranged on a substrate 16;

FIG. 13 is a view showing three conventional methods for fixing a test piece 14 for performing a tensile test on the test piece 14 formed on a wafer.

[Explanation of symbols]

Reference Signs List 10 thin film tensile tester, 12 observation device, 14 test piece, 16 substrate, 16a, 20a silicon wafer, 1
6b, 20b insulating film, 18 test piece driving unit, 20 probe, 22 load measuring unit, 24 positioning stage,
26 pedestal, 32 laminated piezoelectric element, 34, 44 semiconductor strain gauge, 42 leaf spring, 50 power supply, 60
Fixed part, 62 test part, 64 chuck part, 70-73
Electrode, 80 sacrificial layer, 81 sample thin film, 84 adhesive layer.

────────────────────────────────────────────────── ─── Continuation of front page (58) Field surveyed (Int. Cl. ⁷ , DB name) G01N 3/00 JICST file (JOIS)

Claims (8)

(57) [Claims] 1. A thin-film test piece is formed such that one end is fixed on a substrate and the other end is a free end.
The free end side is attracted and fixed to a suction means by electrostatic force, and the one end fixed to the substrate of the thin film test piece in this state .
A tensile load is applied to the test piece by widening a distance between the test piece and the other end side adsorbed by the suction means, and a tensile test is performed by measuring the magnitude of the tensile load. Tensile test method. 2. An apparatus for performing a tensile test on a thin film test piece having one end fixed on a substrate and the other end being a free end, comprising: a test suction means for sucking and fixing the free end side. , to adsorb a thin film specimen suction means for the test, the thin film test and the electrostatic generator means for generating an electrostatic force therebetween, in a state in which the thin film specimen is adsorbed
One end fixed to one of the substrates and the suction means
A thin-film test piece drive section that applies a tensile load to the thin-film test piece by increasing the distance from the other end side, and a tensile load measuring section that measures the magnitude of the tensile load. Thin film tensile test equipment. 3. The thin film tensile test apparatus according to claim 2, wherein the test suction means is a conductor having an insulating film formed on at least a contact surface between the test means and the thin film test piece. The thin-film tensile test apparatus, wherein the power generation means applies a voltage between the thin-film test piece and the conductor to generate an electrostatic attraction between the two. 4. The thin film tensile test apparatus according to claim 2, wherein a pair of test electrodes is formed on a contact surface of the test suction means with the thin film test piece. A thin film tensile test apparatus characterized in that a voltage is applied between electrodes to generate an electrostatic attraction for attracting a thin film test piece. 5. The thin-film tensile test apparatus according to claim 2, further comprising a collecting suction means for sucking the thin-film test piece when the thin-film test piece is broken by a tensile load, The thin-film tensile test apparatus, wherein the electrostatic force generation means generates an electrostatic force for detaching the broken test piece from the test suction means and causing the test piece to be sucked by the recovery suction means. 6. The thin-film tensile test apparatus according to claim 3, further comprising a collecting suction means for sucking the thin-film test piece when the thin-film test piece is broken by a tensile load, Is a conductor having an insulating film formed on at least a contact surface between the means and the thin-film test piece, and the electrostatic force generating means includes a thin-film test piece and the collection suction means before the thin-film test piece is broken. And the same potential is applied, and after the thin film test piece is broken, a voltage having a polarity opposite to that before the break is applied between the test suction means and the recovery suction means. 7. The thin-film tensile test apparatus according to claim 4, further comprising a collecting suction means for suctioning the thin-film test piece when the thin-film test piece breaks due to a tensile load, Includes a pair of collecting electrodes, wherein the electrostatic force generating means stops applying a voltage between the testing electrodes and starts applying a voltage between the collecting electrodes after the thin film test piece is broken. Thin film tensile tester. 8. The thin-film tensile test apparatus according to claim 2, wherein a length of the substrate is longer than a distance between both ends of the thin-film test piece, and the thin-film test piece is substantially parallel to the substrate surface. A thin-film tensile test device, which is arranged.