JP3305577B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an arrangement and use of mounting joint terminals in a semiconductor device which is flip-chip mounted on a circuit board by a plurality of substantially spherical mounting joint terminals.

[0002]

2. Description of the Related Art Among semiconductor devices mounted on a circuit board by a flip-chip mounting method, a so-called ball grid array (BGA) type semiconductor device for coping with high-density mounting includes a semiconductor element and the semiconductor element. A semiconductor device housing package to be housed, and a substantially spherical mounting joint terminal such as a plurality of solder bumps is formed on the lower surface of the semiconductor device housing package in a lattice shape or a double-walled shape so that the outermost portion becomes a square ring. Are formed in an array,
When mounting, the mounting joint terminals are connected to the signal, power, and ground electrodes of the semiconductor element inside the semiconductor element storage package, and are also mounted and connected to the electrode pads on the circuit board, and the connection between the semiconductor element and the circuit board is made. Supply of a signal or power and conduction with the ground.

In such a BGA type semiconductor device, a large number of signal lines for weak signals are connected with a wiring length as short as possible in accordance with high integration and high density of semiconductor elements and circuit boards. It is generally required that the outermost mounting joint terminals arranged in a square ring be used for connection of signal lines, and all outermost mounting joint terminals have been designed and used as signal terminals.

In a highly reliable semiconductor device containing a highly integrated semiconductor device, a package for housing a semiconductor device made of ceramic is usually used. On the other hand, a mechanical board such as impact resistance is used for a circuit board. A glass epoxy substrate is usually used because of its excellent properties and chemical properties such as chemical resistance and low cost.

[0005]

However, such as in the case where a BGA type semiconductor device using a package for housing a semiconductor element made of ceramic is flip-chip mounted on a circuit board using glass epoxy, the heat of the semiconductor device may be reduced. If the coefficient of thermal expansion is small and the coefficient of thermal expansion of the circuit board is large and the difference between the coefficients of thermal expansion is large, temperature changes during the mounting process, heat generated by the semiconductor elements during use, and temperature changes due to the use environment, etc. The stress caused by the difference in the coefficient of thermal expansion is applied to the mounting joint terminal, and as a result, cracks may occur in the connection part, especially at one of the four outermost square annular mounting joint terminals where the maximum stress is applied. There is a problem that disconnection is likely to occur, and as a result, electrical connection with the circuit board at the mounting joint terminal may not be established. .

[0006] In addition, such an electrical connection failure is likely to occur at any of the outermost square annular four corner mounting joint terminals, and if a connection failure occurs, it is assigned to the mounting joint terminal. There is also a problem that the reliability of the semiconductor device after mounting is apt to be lowered because the semiconductor device fails because the specific electric signal is not transmitted and the semiconductor device fails.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to flip a BGA type semiconductor device between a semiconductor device having a large difference in thermal expansion coefficient and a circuit board. Even if the chip is mounted,
An object of the present invention is to provide a semiconductor device which is less likely to fail due to poor connection of any of the mounting joint terminals at the four corners of the outermost rectangular ring array and has high reliability after mounting.

[0008]

According to the present invention, there is provided a semiconductor device comprising:
A semiconductor element, a semiconductor element housing package in which a recess for housing the semiconductor element is formed on the upper surface, and the outermost part is arranged in a square ring shape in a region surrounding the recess on the lower surface of the semiconductor element housing package; A signal electrode of the semiconductor element, a plurality of substantially spherical mounting joint terminals to which a power supply electrode or a ground electrode is connected, and a power supply electrode or a ground electrode of the semiconductor element positioned at the four corners of the rectangular ring. In addition to the connection to the joint terminal, the power supply electrode and the ground electrode of the semiconductor element are also connected to the mounting joint terminals located at positions other than the four corners of the rectangular ring.

Further, in the semiconductor device of the present invention, the power supply electrode or the ground electrode of the semiconductor element is an outermost mounting joint terminal adjacent to the mounting joint terminal located at the four corners of the rectangular ring. It is also characterized in that it is also connected to.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a bottom view showing one embodiment of the semiconductor device of the present invention. In the semiconductor device 1 shown in FIG.
Reference numeral 2 denotes a semiconductor element, which is indicated by a broken line. Electrodes (signal electrode, power supply electrode, or ground electrode) of the semiconductor element 2 are provided on the lower surface.
3 are arranged in plurality.

Numeral 4 denotes a semiconductor element housing package for housing the semiconductor element 2 in a recess 5 formed on the upper surface thereof. The outermost area of the package surrounding the recess 5 on the lower surface of the semiconductor element housing package 4 is rectangular. A plurality of substantially spherical mounting joint terminals 6 arranged in a ring and connected to the electrodes 3 of the semiconductor element 2 are arranged.

FIG. 2 is a cross-sectional view showing a state where the semiconductor device 1 is mounted on a circuit board, and the same parts as those in FIG. 1 are denoted by the same reference numerals. In FIG. 1, reference numeral 9 denotes a cover of the semiconductor element housing package 4. After the semiconductor element 2 is mounted in the recess 5 of the semiconductor element housing package 4, the sealing member or the brazing material is used to cover the recess 5. By attaching, the semiconductor element 2 is sealed and accommodated. When the semiconductor element 2 mounted on the upper surface of the semiconductor element housing package 4 is directly sealed with resin, the lid 9 is not always necessary.

Reference numeral 10 denotes a circuit board on which the semiconductor device 1 is flip-chip mounted, and the mounting joint terminals 6 are connected to mounting electrode pads (not shown) provided on the upper surface of the circuit board, whereby the semiconductor element 2 is mounted. Are electrically connected to the signal wiring, power supply wiring, and ground wiring of the circuit board 10.

In the semiconductor device 1 of the present invention, the power supply electrode or the ground electrode of the electrodes 3 of the semiconductor element 2 is connected to the mounting joint terminals 7 located at the four outermost rectangular annular corners of the mounting joint terminals 6. In addition to the connection, the power supply electrode and the ground electrode of the electrodes 3 of the semiconductor element 2 are connected to the mounting joint terminals 6 other than the mounting joint terminals 7 located at the four outermost rectangular annular corners.

As a result, according to the semiconductor device 1 of the present invention, the semiconductor device housing package 4 of the semiconductor device 1 is caused by a temperature change in a mounting process, a heat generation from the semiconductor device 2 during use, or a temperature change due to a use environment. And stress due to the difference in the coefficient of thermal expansion between the circuit board 10 and
Even if a connection failure occurs in any one of the mounting joint terminals 7 due to the maximum stress being applied to the mounting joint terminals 7 located at the outermost four corners of the square ring, the mounting joint terminal 7 has a semiconductor. Since the signal electrode of the element 2 is not connected, transmission of a unique electric signal to or from the semiconductor element 2 does not occur. Further, even if the connection failure of the mounting joint terminal 7 is to the power supply or the ground, the supply of the power and the continuity with the ground are ensured by the mounting joint terminal 6 located at other than the four corners of the rectangular ring. 1 does not occur, and the semiconductor device 1 has high reliability after mounting.

Further, according to the semiconductor device 1 of the present invention, even in the worst case where all of the mounting joint terminals 7 located at the outermost four corners of the rectangular ring have a poor connection, they are not limited to the four corners of the rectangular ring. Since the supply of power and conduction with the ground are ensured by the located mounting joint terminal 6, the semiconductor device 1 does not fail, and the semiconductor device 1 has high reliability after mounting.

Further, in addition to the above configuration, the semiconductor device 1 of the present invention further comprises a power supply electrode or a ground electrode of the semiconductor element 2 mounted on the outermost mounting terminal 7 adjacent to the mounting joint terminals 7 located at the four corners of the rectangular ring. It is characterized in that it is also connected to the joint terminal 8.

According to the semiconductor device 1 of the present invention, the difference in the coefficient of thermal expansion between the semiconductor element housing package 4 and the circuit board 10 of the semiconductor device 1 is very large, so that the stress becomes large, Outermost mounting joint terminals 8 adjacent to mounting joint terminals 7 located at four corners of the outer rectangular ring
In the case where a connection failure occurs up to any of the above, the power is supplied by the adjacent mounting joint terminal 8 or the mounting joint terminal 6 located at a position other than the four corners of the rectangular ring where the connection failure has not occurred. Supply and ground conduction are ensured, so that no failure of the semiconductor device 1 occurs and the semiconductor device 1 has high reliability after mounting.

In the semiconductor device 1 of the present invention, the semiconductor element 2 is, for example, an IC or LS formed on a Si substrate.
I and the like are used.

The package having a small coefficient of thermal expansion includes, for example, a sintered body of aluminum oxide, a sintered body of mullite, a sintered body of silicon carbide, a sintered body of aluminum nitride, and glass. There is a ceramic BGA type package in which a metallized wiring layer made of a metal such as tungsten, molybdenum, manganese or copper is formed on an insulating base such as a ceramic sintered body, or a chip size package (CSP). On the other hand, as a material having a large coefficient of thermal expansion, for example, there is a printed wiring board formed of an insulating base made of glass epoxy resin and copper wiring.

The mounting joint terminal 6 has a substantially spherical terminal made of low melting point lead-tin solder, copper, or the like on a connection pad connected to the metallized wiring layer on the lower surface of the semiconductor element housing package 4. By the brazing or the conductive resin, the semiconductor device 1 is formed in a desired size and arrangement (a lattice shape, various surrounding shapes, etc.) according to the specification of the semiconductor device 1.

The cover 9 is made of alumina ceramic or Fe-Ni.
When the semiconductor element 2 is sealed with a sealing resin, a resin such as epoxy may be used.

The circuit board 10 on which the semiconductor device 1 is flip-chip mounted has a large coefficient of thermal expansion, for example, a multilayer printed wiring board composed of an insulating base of glass epoxy resin and copper wiring. On the other hand, as a material having a low coefficient of thermal expansion, an insulating substrate such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a glass ceramic sintered body is used. And a ceramic BGA type package or CSP on which a metallized wiring layer made of manganese, molybdenum, copper or the like is formed.

In addition, the space between the semiconductor device 1 and the circuit board 10 may be filled with a thermosetting resin containing a filler as an underfill material if necessary after mounting.

Thus, according to the semiconductor device 1 of the present invention,
Even when a stress due to a temperature change is applied to the mounting joint terminal 6 due to a large difference in coefficient of thermal expansion from the circuit board 10 and connection failure of the mounting joint terminal 7 or the mounting joint terminal 8 occurs, No failure of the semiconductor device 1 occurs and the semiconductor device 1 has high reliability after mounting.

It should be noted that the present invention is not limited to the above-described embodiment, and that various changes and improvements can be made without departing from the scope of the present invention.

[0028]

According to the semiconductor device of the present invention, a semiconductor device, a semiconductor device housing package having a recess for housing the semiconductor device formed on the upper surface, and the recess on the lower surface of the semiconductor device housing package are provided. A semiconductor device comprising a plurality of substantially spherical mounting joint terminals to which a signal electrode of the semiconductor element, a power supply electrode or a ground electrode is connected, the outermost of which is arranged in a rectangular ring in a surrounding area,
Connect the power supply electrode or the ground electrode among the electrodes of the semiconductor element to the mounting joint terminals located at the outermost square annular corners of the mounting joint terminals, and mount them at the outermost square annular four corners. Since the power supply electrode and the ground electrode of the semiconductor element electrodes are connected to the mounting joint terminals other than the joint terminals, the flip-chip mounting with the circuit board with a large difference in the coefficient of thermal expansion is performed when mounting. The stress caused by the difference in the coefficient of thermal expansion between the semiconductor device housing package of the semiconductor device and the circuit board occurs due to the temperature change in the process, heat generated by the semiconductor device during use, and temperature change due to the use environment. Even if a connection failure occurs at one of the mounting joint terminals due to the stress applied to the mounting joint terminals located at the four corners of the outermost rectangular ring, Intrinsic electrical signal to the semiconductor element or the semiconductor element because the signal electrodes not connected semiconductor element is no longer that no longer transmitted to the joint pin. In addition, even if the connection failure of the mounting joint terminal was caused by the power supply or the ground, the supply of the power and the continuity with the ground could be ensured by the mounting joint terminal located outside the four corners of the rectangular ring. As a result, a failure due to a connection failure of any of the mounting joint terminals at any of the four corners of the outermost rectangular annular array is unlikely to occur, and a highly reliable semiconductor device after mounting can be provided.

Further, according to the semiconductor device of the present invention, even in the worst case where all of the mounting joint terminals located at the outermost four corners of the rectangular ring have a poor connection, they are located at positions other than the four corners of the rectangular ring. Since the supply of power and conduction with the ground are ensured by the mounting joint terminal, no failure occurs and a highly reliable semiconductor device after mounting can be provided.

According to the semiconductor device of the present invention, in addition to the above configuration, the power supply electrode or the ground electrode of the semiconductor element is mounted on the outermost mounting joint adjacent to the mounting joint terminals located at the four corners of the rectangular ring. Since the terminals are also connected, the difference in the coefficient of thermal expansion between the semiconductor device housing package of the semiconductor device and the circuit board is very large, which increases the stress and causes the outermost square ring to be mounted at the four corners of the square ring. Even if a connection failure occurs at any of the outermost mounting joint terminals adjacent to the joint terminal, those adjacent mounting joint terminals or square annular four corners where the connection failure has not occurred The connection between the power supply and the ground can be ensured by the mounting joint terminals located at positions other than the above, no failure occurs, and a highly reliable semiconductor device after mounting can be provided.

[Brief description of the drawings]

FIG. 1 is a bottom view showing one embodiment of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view showing one embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device 2 ... Semiconductor element 3 ... Electrode (signal electrode / power supply electrode or ground electrode) 4 ... Package for semiconductor element accommodation 6 ... Joint terminal for mounting 7 ... Outermost Mounting joint terminals located at the four corners of the rectangular ring 8... Outermost mounting joint terminals adjacent to the mounting joint terminals located at the four outermost square annular corners

Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 23/12

Claims (2)

(57) [Claims] 1. A semiconductor device and a semiconductor device for accommodating the semiconductor device.
A semiconductor element housing package having a recess formed on the upper surface , and the recess on the lower surface of the semiconductor element housing package.
Its outermost in the area surrounding are arranged in a square annular, the signal electrode of the semiconductor element, and a plurality of substantially spherical mounting joint terminal of the power electrode or ground electrode connected adult
Ri, together with the connecting power electrodes or ground electrode of the semiconductor element mounting fitting pins located on the four corners of the rectangular annular, for mounting which is located the power and ground electrodes of the semiconductor element other than the four corners of the rectangular annular A semiconductor device which is also connected to a joint terminal. 2. A power supply electrode or a ground electrode of the semiconductor element is also connected to an outermost mounting joint terminal adjacent to the mounting joint terminal located at the four corners of the rectangular ring. Semiconductor device.