JP3297194B2 - Method for producing film forming film - Google Patents
Method for producing film forming filmInfo
- Publication number
- JP3297194B2 JP3297194B2 JP09416194A JP9416194A JP3297194B2 JP 3297194 B2 JP3297194 B2 JP 3297194B2 JP 09416194 A JP09416194 A JP 09416194A JP 9416194 A JP9416194 A JP 9416194A JP 3297194 B2 JP3297194 B2 JP 3297194B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- producing
- sio
- sion
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、表面の気密性を向上さ
せる被膜を形成したフィルムの製造方法に関する。The present invention relates to a process for the preparation of the formation of the coating film to improve the airtightness of the surface film.
【０００２】[0002]
【従来の技術】現在、レトルト食品などの包装容器は、 内部の食品の目視が可能（透明性） 電子レンジなどでの調理が可能（非金属材料の使用） 長期の保存が可能（気密性） などの条件から、透明な樹脂のフィルムにＳｉＯの被膜
を真空蒸着法などにより形成したものを使用している。2. Description of the Related Art At present, packaging containers for retort foods and the like can be visually inspected inside (transparency) Can be cooked in a microwave oven or the like (use of non-metallic materials) Can be stored for a long time (airtightness) For this reason, a transparent resin film formed with a SiO film by a vacuum deposition method or the like is used.
【０００３】[0003]
【発明が解決しようとする課題】最近は、このような包
装容器において、より長期保存が可能なもの、即ち、よ
り気密性の高いフィルムが求められている。このため、
ＳｉＯの蒸着密度を高める方法、即ち、蒸着容器内の減
圧度や蒸着温度などを高くする方法が考えられている。
しかしながら、必要とする蒸着密度が得られる減圧度や
蒸着温度で蒸着を行うと、蒸着材料がスプラッシュとな
って飛散し、フィルムに穴があいてしまうという問題が
生じてしまう。Recently, there has been a demand for such a packaging container that can be stored for a longer period of time, that is, a film with higher airtightness. For this reason,
A method of increasing the deposition density of SiO, that is, a method of increasing the degree of pressure reduction and the deposition temperature in a deposition container has been considered.
However, when vapor deposition is performed at a reduced pressure or vapor deposition temperature at which a required vapor deposition density can be obtained, a problem arises in that the vapor deposition material is splashed and scattered, and a hole is formed in the film.
【０００４】[0004]
【課題を解決するための手段】前述した課題を解決する
ため、本発明による被膜形成フィルムの製造方法は、フ
ィルムへ窒素イオンを放射しながら当該フィルムにＳｉ
Ｏを蒸着させることにより当該フィルムにＳｉＯＮの被
膜を形成することを特徴とする。In order to solve the above-mentioned problems, a method for producing a film-forming film according to the present invention comprises the steps of:
A film of SiON is formed on the film by vapor deposition of O.
【０００５】[0005]
【０００６】[0006]
【作用】本発明による被膜形成フィルムの製造方法で
は、フィルムへ窒素イオンを放射しながらフィルムにＳ
ｉＯを蒸着させるので、フィルムには、ＳｉＯＮの被膜
が形成され、フィルムが高気密性となる。即ち、ＳｉＯ
Ｎは、分子間が強いため、高密度な被膜が形成される。In the method for producing a film-formed film according to the present invention, the film is irradiated with nitrogen ions while emitting nitrogen ions.
Since iO is deposited, the film is coated with SiON
Are formed, and the film becomes highly airtight. That is, SiO
Since N has a strong intermolecular structure, a high-density film is formed.
【０００７】[0007]
【０００８】[0008]
【実施例】本発明による被膜形成フィルム及びその製造
方法の一実施例を図１に基づいて説明する。なお、図１
は、その製造方法に基づいた製造装置の概略構成図であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a film forming film and a method for producing the same according to the present invention will be described with reference to FIG. FIG.
1 is a schematic configuration diagram of a manufacturing apparatus based on the manufacturing method.
【０００９】真空容器１には、図示しない真空ポンプが
連結される。真空容器１内には、抵抗加熱可能なるつぼ
２が設けられている。るつぼ２内には、蒸着材料１１で
ある固形のＳｉＯが入れられる。真空容器１内のるつぼ
２の上方には、ポリエステルなどの樹脂のフィルム１２
が配置される。真空容器１の内部には、真空容器１の外
側に設けられた図示しない窒素ボンベと連結されたカウ
フマン型のイオン銃３が先端側をフィルム１２へ向けて
設けられている。A vacuum pump (not shown) is connected to the vacuum vessel 1. A crucible 2 capable of resistance heating is provided in the vacuum vessel 1. In the crucible 2, solid SiO which is the vapor deposition material 11 is put. Above the crucible 2 in the vacuum vessel 1, a film 12 of a resin such as polyester
Is arranged. Inside the vacuum vessel 1, a Kauffman-type ion gun 3 connected to a nitrogen cylinder (not shown) provided outside the vacuum vessel 1 is provided with its tip side facing the film 12.
【００１０】このような装置は、以下のように用いられ
る。前記真空ポンプを作動して、真空容器１内を減圧す
る。るつぼ２を加熱して、蒸着材料１１からＳｉＯの蒸
気を発生させる。イオン銃３を作動して、前記窒素ボン
ベからの窒素をイオン化し、フィルム１２へ放射する。
これにより、フィルム１２の表面にＳｉＯＮの被膜が形
成された被膜形成フィルムを容易に得ることができるの
である。[0010] Such an apparatus is used as follows. The inside of the vacuum vessel 1 is depressurized by operating the vacuum pump. The crucible 2 is heated to generate vapor of SiO from the vapor deposition material 11. By operating the ion gun 3, nitrogen from the nitrogen cylinder is ionized and emitted to the film 12.
As a result, a film-formed film in which a film of SiON is formed on the surface of the film 12 can be easily obtained.
【００１１】このようにして得られる被膜形成フィルム
の効果を確認するため、下記のような比較実験を行っ
た。 （１）本発明に基づいた被膜形成フィルムの製造 ６．６×１０-3Ｐａ下で毎分４cm3 の窒素ガスを５００
Ｖの電圧でイオン化してフィルム１２に放射しながら、
蒸着材料１１を１５００Ｋに加熱して、フィルム１２に
被膜を形成した（以下、これをサンプルＡと呼ぶ）。 （２）上記方法の一部変更による被膜形成フィルムの製
造 上記の被膜形成フィルムの製造方法における窒素ガスを
アルゴンガスに代え、フィルム１２に被膜を形成した
（以下、これをサンプルＢと呼ぶ）。 （３）従来技術に基づいた被膜形成フィルムの製造 フィルム１２にイオン化したガスを放射することなく、
蒸着材料１１を１５００Ｋに加熱して、フィルム１２に
被膜を形成した（以下、これをサンプルＣと呼ぶ）。In order to confirm the effect of the film-forming film thus obtained, the following comparative experiment was conducted. (1) Production of a film-forming film based on the present invention At 6.6 × 10 −3 Pa, nitrogen gas of 4 cm 3 per minute was supplied by 500 times.
While ionizing at a voltage of V and radiating to the film 12,
The deposition material 11 was heated to 1500 K to form a film on the film 12 (hereinafter, this is referred to as sample A). (2) Production of Coating Film by Partial Modification of the Above Method A coating was formed on the film 12 by replacing the nitrogen gas in the above production method of the coating film with argon gas (hereinafter referred to as sample B). (3) Production of film-forming film based on conventional technology Without emitting ionized gas to the film 12,
The deposition material 11 was heated to 1500 K to form a coating on the film 12 (hereinafter, this is referred to as Sample C).
【００１２】次いで、これらサンプルＡ，Ｂ，Ｃの被膜
組成、透明度、気密度を求め、これらの結果を基に総合
評価を行った。その結果を表１に示す。なお、被膜組成
は、オージェ分析計により測定し、透明度は、従来品と
の目視比較により判断し、気密度は、酸素透過率計によ
る測定値と基準値（２cm3 ／cm2 ・ｄａｙ〔１ａｔｍ、
２５℃〕）との比較により判断した。Next, the coating composition, transparency, and airtightness of these samples A, B, and C were determined, and a comprehensive evaluation was performed based on these results. Table 1 shows the results. The film composition was measured by an Auger analyzer, the transparency was judged by visual comparison with a conventional product, and the air density was measured by an oxygen permeability meter and a reference value (2 cm 3 / cm 2 · day [1 atm). ,
25 ° C.]).
【表１】 [Table 1]
【００１３】表１に示すように、サンプルＢ，Ｃは、被
膜組成がＳｉＯであるのに対し、サンプルＡは、被膜組
成がＳｉＯＮであった。また、サンプルＢ，Ｃは、透明
度、気密度が並であり、総合評価が並であるのに対し、
サンプルＡは、透明度、気密度の両者共に優良であり、
総合評価も優良であった。つまり、ＳｉＯＮの被膜はＳ
ｉＯの被膜よりも被膜密度及び光透過性が高いため、気
密性及び透明性に優れているのである。As shown in Table 1, samples B and C had a coating composition of SiO, while sample A had a coating composition of SiON. Samples B and C have the same level of transparency and airtightness, and have the same overall evaluation.
Sample A is excellent in both transparency and airtightness,
The overall evaluation was also excellent. That is, the SiON coating is S
Since the film density and the light transmittance are higher than the iO film, the airtightness and the transparency are excellent.
【００１４】従って、ＳｉＯＮを被膜したフィルムをレ
トルト食品などの包装容器に用いると、従来品よりも食
品を長期にわたって保存することが可能となるのであ
る。また、ＳｉＯＮ被膜フィルムは、従来のＳｉＯ被膜
フィルムの製造時に、フィルムへ向けて窒素イオンを放
射するだけで得られるので、非常に簡単に製造すること
ができるのである。Therefore, when a film coated with SiON is used for a packaging container for a retort food or the like, the food can be stored for a longer period than conventional products. Further, the SiON-coated film can be produced very simply because it can be obtained only by radiating nitrogen ions toward the film at the time of producing the conventional SiO-coated film.
【００１５】なお前述した実施例では、蒸着材料１１と
してＳｉＯを用いたが、ＳｉとＳｉＯ2 との混合物を用
いても良い。前述した比較実験では、毎分４cm3 の窒素
ガスをイオン化してフィルム１２に放射したが、窒素ガ
ス量は、イオン銃の種類やイオン化電圧などに応じて設
定すれば良い。In the above-described embodiment, SiO is used as the vapor deposition material 11, but a mixture of Si and SiO 2 may be used. In the above-described comparative experiment, 4 cm 3 of nitrogen gas per minute was ionized and emitted to the film 12, but the amount of nitrogen gas may be set according to the type of ion gun, ionization voltage, and the like.
【００１６】[0016]
【発明の効果】前述したように、本発明による被膜形成
フィルムの製造方法では、フィルムへ窒素イオンを放射
しながらフィルムにＳｉＯを蒸着させることにより、フ
ィルムにＳｉＯＮの被膜を形成しているので、気密性、
透明性に優れ、例えば、レトルト食品の包装容器などに
用いれば、内部の食品を長期にわたって保存することが
できるフィルムを容易に製造することができる。As described above, in the method for producing a film according to the present invention , nitrogen ions are emitted to the film.
While depositing SiO on the film while forming a film of SiON on the film, airtightness,
When used for packaging containers for retort foods, which is excellent in transparency, for example, it is possible to easily produce a film that can store foods therein for a long period of time.
【００１７】[0017]
【図１】本発明による被膜形成フィルムの製造方法の一
実施例に基づいた製造装置の概略構成図である。FIG. 1 is a schematic configuration diagram of a manufacturing apparatus based on one embodiment of a method of manufacturing a film-forming film according to the present invention.
１ 真空容器 ２ るつぼ ３ イオン銃 １１ 蒸着材料 １２ フィルム DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Crucible 3 Ion gun 11 Vapor deposition material 12 Film
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−247351（ＪＰ，Ａ) 特開 平５−262371（ＪＰ，Ａ) 特開 平３−17269（ＪＰ，Ａ) 特開 平６−2105（ＪＰ，Ａ) 実開 昭50−128332（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 ＩＮＳＰＥＣ（ＤＩＡＬＯＧ) ＪＩＣＳＴファイル（ＪＯＩＳ)──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-247351 (JP, A) JP-A-5-262371 (JP, A) JP-A-3-17269 (JP, A) 2105 (JP, A) Japanese Utility Model Showa 50-128332 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 14/00-14/58 INSPEC (DIALOG) JICST file (JOIS)
Claims (1)
該フィルムにＳｉＯを蒸着させることにより当該フィル
ムにＳｉＯＮの被膜を形成することを特徴とする被膜形
成フィルムの製造方法。1. A method for producing a film on which a film of SiON is formed by depositing SiO on the film while radiating nitrogen ions to the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09416194A JP3297194B2 (en) | 1994-05-06 | 1994-05-06 | Method for producing film forming film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09416194A JP3297194B2 (en) | 1994-05-06 | 1994-05-06 | Method for producing film forming film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07305161A JPH07305161A (en) | 1995-11-21 |
| JP3297194B2 true JP3297194B2 (en) | 2002-07-02 |
Family
ID=14102655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09416194A Expired - Fee Related JP3297194B2 (en) | 1994-05-06 | 1994-05-06 | Method for producing film forming film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3297194B2 (en) |
-
1994
- 1994-05-06 JP JP09416194A patent/JP3297194B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07305161A (en) | 1995-11-21 |
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