JP3284273B2 - Mounting structure, manufacturing method of mounting structure, and conductive adhesive - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure for mounting an electronic component such as a semiconductor device, a method for manufacturing the same, and a conductive adhesive used for manufacturing the mounting structure.

[0002]

2. Description of the Related Art Conventionally, when a semiconductor device is mounted on input / output terminal electrodes of a circuit board, a wire bonding method using soldering has been often used. However, in recent years,
With the miniaturization of the package of the semiconductor device and the increase in the number of connection terminals, the interval between the connection terminals has been narrowed, and it has become increasingly difficult to cope with the conventional soldering technology.

Therefore, recently, a method has been proposed in which a semiconductor device such as an integrated circuit chip is directly mounted on input / output terminal electrodes of a circuit board to reduce the mounting area and achieve efficient use.

In particular, flip-chip mounting, in which a semiconductor device is mounted on a circuit board in a face-down state, requires that electrical connection between the semiconductor device and the circuit board can be made collectively.
It is considered to be a useful method because of its high mechanical strength after connection.

As a connection material for flip-chip mounting, a method using a conductive adhesive has been proposed or put into practical use.

This method is a promising method for improving reliability and environmental measures for the following two reasons.

First, the conductive adhesive contains a resin material such as an epoxy resin, and has a more flexible connection with respect to external force and thermal stress as compared with solder which is a metal material, thereby improving reliability. Can be realized.

Second, since the conductive adhesive mainly uses silver particles as a conductive component, clean mounting without using lead can be realized.

On the other hand, conventionally, in the structure for mounting electronic parts such as chip parts and package parts on a printed circuit board, a structure using a conductive adhesive has been proposed in the same manner as described above in order to improve reliability and environmental measures. I have.

As described above, the mounting structure using the conductive adhesive will be a promising method in the future in view of both improvement in reliability and environmental measures.

[0011]

However, the mounting structure using the conductive adhesive has the following two problems, which hinders practical use.

The first problem is a decrease in insulation reliability due to ion migration. Ion migration is a kind of electrolytic action, and is a phenomenon in which, when an electrolyte such as water is present between electrodes to which a voltage is applied, dielectric breakdown occurs between the electrodes in the following four steps.

Step 1) Elution and ionization of anode metal Step 2) Movement of ionized metal toward cathode by applying voltage Step 3) Precipitation of metal ions transferred to cathode Step 4) Repeat steps 1) to 3) Due to such an ion migration phenomenon, the metal grows in a dendritic manner between the electrodes, and finally, the metal is bridged between the electrodes to cause dielectric breakdown.

Silver used for the conductive filler of the conductive adhesive has a property of easily dissolving, and easily causes ion migration. Further, with the recent trend toward further miniaturization and weight reduction of electronic devices, the pitch of electrodes provided on semiconductor devices, electronic components, or circuit boards has become narrower, and ion migration is becoming more likely to occur. . Therefore, solving the problem of ion migration is indispensable for putting the conductive adhesive into practical use.

Conventionally, the following three methods have mainly been proposed as methods for suppressing ion migration.

Proposal 1) Alloying of conductive filler (silver-
Proposal 2) Encapsulation of conductive adhesive with insulating resin such as epoxy resin, Proposal 3) Addition of ion trapping agent such as ion exchange resin and chelating agent to conductive adhesive However, these proposals have the following disadvantages. In Proposal 1, the filler metal becomes very expensive, which raises the production cost of the conductive adhesive. In Proposal 2, the addition of the sealing step requires an increase in man-hours and a large increase in equipment, thereby increasing the manufacturing cost. Proposal 3 dissolves metal ions from the conductive filler, thereby lowering the contactability of the conductive filler and causing an increase in connection resistance.

As described above, each of the above proposals has an effect of suppressing ion migration, but has other problems, so that it has been difficult to put it to practical use except in special fields.

The second problem is an increase in connection resistance due to sulfuration. Sulfidation refers to a phenomenon in which a metal reacts with a weakly acidic gas containing sulfur such as hydrogen sulfide or sulfur dioxide to change into a substance having low conductivity called a metal sulfide. Sulfurization is thought to occur in the following steps, although there are still many unclear parts.

Step 1) Elution and ionization of metal in a weakly acidic atmosphere Step 2) Formation of metal sulfide by reaction between sulfur ions and metal ions As described above, the conductive filler mainly contains silver as a main component. Although silver is a metal that is easily sulfided, when silver is sulfided, the volume specific resistance of the conductive adhesive increases, which causes an increase in connection resistance. Very few solutions to this problem have been reported so far for electronic component products that may be used in environments with relatively high concentrations of hydrogen sulfide and sulfur dioxide, such as around hot springs and volcanoes. Cannot apply a mounting structure using a conductive adhesive. Therefore, the application field of the mounting structure using the conductive adhesive has been greatly limited.

In view of the above problems, the present invention can maintain reliability in a mounting structure using a conductive adhesive even under relatively severe conditions such as a humid condition and a gas atmosphere containing sulfur. It is intended to be.

[0021]

The mounting structure according to the present invention comprises:
An electrical structure, comprising a conductive adhesive layer provided on the electrical structure, the conductive adhesive layer has a conductive filler, at least a part of the conductive filler is provided with an elution preventing film. Thus, the above-described problem is solved.

[0022]

DETAILED DESCRIPTION OF THE INVENTION The invention according to claim 1 of the present invention comprises an electric structure, and a conductive adhesive layer provided on the electric structure, wherein the conductive adhesive layer is made of a conductive material. has a filler has an elution preventive film on at least a portion of the conductive filler, the elution preventive film is seen containing a metal complex, the
At least a part of the conductive filler has the conductive contact.
Exposed on the surface of the adhesive layer, the elution prevention film is less
Both provided in this exposed portion, the conductive adhesive layer,
A large number of communicating with each other and communicating with the surface of the adhesive layer
It has pores, and at least one of the conductive fillers has
The portion is exposed on the inner surface of the hole, and the elution preventing film
The conductive filter exposed at least on the inner surface of the hole.
It is characterized by being provided on a mirror . With this configuration, the mounting structure of the present invention exhibits good insulation reliability even under high temperature and high humidity. This is because the elution preventing film prevents the metal of the conductive filler from being eluted even under high temperature and high humidity, so that the ion migration reaction can be fundamentally prevented. Furthermore, the present mounting structure does not cause sulfidation of the conductive filler even when left in a gas containing sulfur, and shows good connection reliability. This is because the sulfurization reaction can be fundamentally prevented by preventing the elution of the conductive filler. The metal complex is a coordination compound generated by the reaction between the metal and the complexing agent, and this reaction proceeds rapidly at room temperature. Therefore, formation of a complex film on the surface of the conductive filler can be performed by bringing the complexing agent into contact with the conductive filler. The metal complex formed on the filler surface has a very strong and stable coordination bond between the metal and the complexing agent, and has excellent adhesion to the metal. Therefore, in the present invention in which the elution preventing film contains a metal complex, the effect of preventing elution is further enhanced, and the effect of improving ion migration resistance and the effect of improving sulfidation reactivity are increased. further
Also, in the present invention, the conductive filler communicates with the surface and is conductive.
Selectively dissolves only in areas where conductive filler is likely to elute
An outflow prevention film will be provided. This allows the following work
Demonstrate. In the part of the filler involved in electrical conduction
The provision of an elution-preventing film slightly hinders electrical conduction.
In some cases. Therefore, an elution-preventing film exists at this site.
If that is, applying pressure from the outside along the conducting direction, etc.
By breaking the elution prevention film at this site by applying
Electrical conduction is ensured. In contrast, the present invention
According to the configuration, it is selectively dissolved only in the part where elution is likely to occur.
Since an anti-outflow film will be provided,
The elution preventing film hardly exists at the sealer portion.
Therefore, the electrical continuity is further improved.
You. Further, as described in claim 2 of the present invention, the electric
And a conductive adhesive layer provided on the electric structure.
Comprising, the conductive adhesive layer has a conductive filler,
At least a part of the conductive filler is exposed to an external environment.
And has an anti-elution film only on the exposed part.
The mounting structure may be configured by using Such a mounting structure
In the method, as described in claim 3 of the present invention,
It is preferable that the elution preventing film contains a metal complex.
Examples of the elution preventive film used in these present invention, and metal alkoxides. Examples of metal alkoxides include silicon tetraethoxide, aluminum tributoxide, titanium tetrabutoxide and the like. As the complexing agent ligand to form the applicable metal complex thereof present invention, an amino acid group, an amino carboxyl group, alkanolamine group, beta-diketone groups, beta-ketoester group, a polyamine group, imidazole And the like. Among them, particularly, when an aminocarboxyl group bound to a benzene ring or an imidazole group is used, when the metal complex film is water-insoluble and has a property of being insoluble in an aqueous solution containing hydrogen sulfide or sulfur oxide,
Since the effect of suppressing the ion migration and the effect of suppressing the sulfidation reaction are further enhanced, the present invention is the most preferable. Specific examples of such complexing agents include anthranilic acid, 2
-Aminoperimidine, galloyl gallic acid, potassium xanthate, oxine, quinaldic acid, cupperon, 4-
Chloro-3-methyl-5-nitrobenzenesulfonic acid,
Salicylaldehyde oxime, diantipyrylmethane,
Diethyldithiocarbamic acid, p-dimethylaminobenzylidene rhodanine, dimethylglyoxime, oxalic acid, cinchonine, N-cinnamoyl-N-phenylhydroxylamine, thioacetamide, thionalide, thiourea, tetraphenylboric acid, trimethylphenylammonium, -Nitroso-2-naphthol, nitrone,
Neocuperone, bismuthiol II, p-hydroxyphenylarsonic acid, 8-hydroxy-7-iodo-5
Quinolinesulfonic acid, pyrogallol, 1-pyrrolidinecarbodithioic acid, phenylarsonic acid, phenylthiodantoic acid, phenylfluorone, α-furyldioxime, brudin, benzidine, N-benzoyl-N-phenylhydroxylamine, α-benzoin Oxime, benzo [f] quinoline, 2-mercaptobenzothiazole, rhodamine B and the like can be exemplified.

The invention according to claim 1 or 2 is
As described in claim 4, comprising another electric structure disposed on said electric structure, said electrically conductive adhesive layer electrically connecting the other electric structure to the electrical structure In this case, the effect of the ion migration reaction and the sulfidation of the conductive filler on the connection resistance becomes remarkable, so that the present invention is particularly effective.

[0024]

[0025]

[0026]

According to a fifth aspect of the present invention, there is provided the mounting structure according to the first or second aspect, wherein the elution preventing film is water-insoluble. With this configuration, in the mounting structure of the present invention, since the elution preventing film does not dissolve even under high temperature and high humidity conditions, the elution preventing effect is less likely to be reduced than in the invention according to claim 1, and the ion migration reaction is prevented. The suppressing effect and the effect of suppressing the sulfurization of the conductive filler can be maintained for a long period of time.

Examples of the water-insoluble elution preventing film usable in the present invention include silicon tetraethoxide, aluminum tributoxide, titanium tetrabutoxide and the like.

According to a sixth aspect of the present invention, there is provided the mounting structure according to the first or second aspect , wherein the elution preventing film comprises:
It is characterized by being insoluble in an aqueous solution containing hydrogen sulfide or sulfur oxide. With this configuration, the mounting structure of the present invention has a greater effect of preventing a sulfidation reaction than the invention described in claim 1 or 2 . This is because, even when hydrogen sulfide or sulfur oxide is condensed as an aqueous solution on the elution-preventing film surface on the elution-preventing film surface, the elution-preventing film does not elute, so that the elution-preventing effect is unlikely to be reduced. Silicone tetraethoxide, aluminum tributoxide, titanium tetrabutoxide and the like can be used as the elution prevention film insoluble in the aqueous solution that can be used in the present invention.

In the present invention, the insolubility in an aqueous solution containing hydrogen sulfide or sulfur oxide or water means that the following conditions are satisfied. That is, when the elution preventing film is made of a resin, the insolubility is defined as a water or aqueous solution absorption of 0.5% by weight or less after 24 hours. When the elution preventing film is composed of a complex, the solubility (weight of the complex with respect to 100 g of water) is 1%.
Less than × 10 ⁻⁵ g is defined as the above insolubility.

[0031]

[0032]

As described in claim 7 , when the conductive filler contains silver, the effect of suppressing the ion migration and the sulfurization reaction are relatively large. The suppression effect and the sulfurization reaction suppression effect become remarkable.

Specific examples of the above-described mounting structure to which the present invention can be applied include a structure in which electronic components are mounted on a circuit board as described in claim 8 and a method in which
As described in (1), an example in which a semiconductor device is flip-chip mounted on a circuit board can be exemplified .

[0035]

[0036]

[0037] The invention according to claim 1 0 of the present invention, the electrical structure, forming a conductive adhesive layer having a conductive filler, after the conductive adhesive layer is hardened, the conductive Forming a dissolution preventing film on the conductive filler communicating with the surface of the adhesive layer. The mounting structure manufactured by this manufacturing method can improve the ion migration resistance and the sulfurization reaction resistance by maintaining the electrical conduction of the electrical structure well by forming the elution prevention film. Can be demonstrated. The reason is the same as that described in claim 1 and the like, and is omitted here. Furthermore, in the present invention, after the conductive adhesive layer is cured, the elution preventing film is formed on the conductive filler, so that the elution preventing film enters the electrically connected portion of the conductive adhesive layer, There is no adverse effect on the conduction state, and good electrical conduction can be ensured .

[0038] Further, as a method for forming such a manner elution preventive film, as described in claim 1 1, there is a complex process. According to the complexing treatment, the following effects can be exerted. The complexing treatment is performed, for example, by pouring a complexing agent, and such complexing treatment can be performed using existing equipment. For this reason, new capital investment is unnecessary, and there is almost no increase in manufacturing costs.
Also, since the complex is generally insulative, if a complex film is formed at the contact point between the conductive fillers or at the contact point between the conductive filler and the electrode metal, the conductivity of the conductive adhesive and the mounting There is a possibility that the electrical characteristics of the structure are slightly impaired. On the other hand, when the manufacturing method of the present invention is used, the conductive filler is cured and its electrical continuity is secured, and then the conductive filler is complexed. And the contact point between the conductive filler and another electrical structure that is conducted to the conductive adhesive layer and the conductive filler can be kept as it is, and only the portion not involved in the electrical conduction can be complexed. Therefore, the elution preventing film can be effectively formed while securing the electrical characteristics of the mounting structure, and a low connection resistance can be obtained. At this time, since the complexing agent selectively reacts with the metal portion, a portion that does not require complexing treatment, that is, a resin component (a binder resin or the like) of the conductive adhesive layer.
Also, no elution preventing film is formed on the surface of the electric structure (eg, the surface of the substrate). Further, in the method of the present invention, since the mounting structure is manufactured using an arbitrary conductive adhesive and then complexed, the present invention is applied to a mounting structure using any type of conductive adhesive. Can be applied, its economic effect is great.

[0039] As specific examples of the mounting structure that can be manufactured by applying the invention described in claim 1 0, 1 1, as described in claim 1 2, wherein the electricity through the conductive adhesive layer and electrically connects the other electrical structures to the structure, as described in claims 1 to 3, and an implementation of the electronic components on the circuit board, as described in claim 14, the semiconductor device An example in which a flip-chip is mounted on a circuit board can be exemplified. In particular, if the present invention is applied to a mounting structure in which an electronic component including a chip component such as a chip resistor is mounted on a circuit board, the following effects can be exerted.

When the above electronic components are mounted, the connection portions are exposed. Therefore, after the mounting structure is completed, the mounting structures are subjected to a complexing process or the like to connect the connection portions of all the components at once. An elution preventing film can be formed on the substrate. Therefore, the time required for forming the elution prevention film can be reduced. When the elution preventing film is formed in the complexing treatment, the complexing agent selectively reacts with the metal part, so that the complexing treatment is not required on the part where the complexing treatment is unnecessary, that is, on the substrate surface, the component surface, or the like. No film (anti-elution film) is formed.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) In Embodiment 1, the present invention is applied to a conductive adhesive. FIG. 1 is an enlarged view of a main part of the conductive adhesive 1 of the present embodiment. This conductive adhesive 1
Is characterized by the structure of the conductive adhesive 1 itself. That is, the conductive adhesive 1 includes the conductive filler 2 having the elution preventing film 3 and the organic binder 4, and is configured by mixing and dispersing the conductive filler 2 and the organic binder 4.

As the elution preventing film 3, besides urethane resin which is a thermoplastic resin, other thermoplastic resin, that is,
A vinyl chloride resin, a vinylidene chloride resin, polystyrene, or a thermosetting resin, that is, a phenol resin, a urea resin, a melamine resin, or the like can be used. further,
As the organic binder 3, an epoxy resin can be used, or another resin, that is, a vinyl acetate resin, an acrylic resin, a phenoxy resin, or the like may be used. Also,
It may be a metal complex.

As the conductive filler 1, silver (A
g), gold (Au), Ag-coated Cu, Cu-Ag alloy, copper (C
u), nickel (Ni), Ag-Pd alloy or the like may be used.
However, silver (Ag) is preferable in consideration of the volume resistivity and the material cost.

(Embodiment 2) In this embodiment, the present invention is implemented in a flip-chip mounting structure of a semiconductor device. As shown in FIG. 2, the mounting structure includes a circuit board 5 which is an example of an electric structure, and a semiconductor device 6 which is an example of another electric structure. Semiconductor device 6
Includes an IC substrate 7 and a bump electrode 8 provided on the surface of the IC substrate 7. The circuit board 5 has input / output terminal electrodes 9 on its surface. The conductive adhesive layer 1A made of the conductive adhesive 1 described in the first embodiment is provided on the input / output terminal 9.
A electrically connects the input / output terminal 9 and the bump electrode 8. Furthermore, the sealing resin 10 is provided in the gap between the semiconductor device 6 and the circuit board 5, and thus constitutes a flip-chip mounting structure.

(Embodiment 3) In this embodiment, the present invention is implemented in a mounting structure for chip components. As shown in FIG. 3, in this mounting structure, a chip resistor 13, a chip coil 14, and a chip capacitor 15, which are another example of the electric structure, are provided on the electrodes 12 of a circuit board 11, which is an example of an electric structure. It is implemented and configured. And
The electrode 12 is provided with a conductive adhesive layer 1A made of the conductive adhesive 1 described in the first embodiment, and the conductive adhesive layer 1A allows the electrode 12 and these chip components 1 to be formed.
3, 14, and 15 are electrically connected.

(Embodiment 4) The above-described Embodiments 1 to
3, the conductive filler 2 contained in the conductive adhesive 1 and the conductive adhesive layer 1A has the elution preventing film 3 in advance. . On the other hand, the present embodiment is characterized in that after the conductive adhesive layer is formed on the electric structure, the elution preventing film is formed on the conductive filler included in the conductive adhesive layer. Here, as one example, as shown in FIG. 4, an electric structure in which conductive adhesive layers 17 and 18 in the form of comb electrodes are formed by a screen printing method on a circuit board 16 which is an example of an electric structure. Although the present invention is implemented in a product, it goes without saying that the present invention can be similarly implemented in a conductive adhesive layer provided on a circuit board when various electronic components are mounted on the circuit board.

Hereinafter, the manufacturing method of this embodiment will be described.

First, a conductive adhesive layer 1 is formed on the circuit 16 with a conductive adhesive similar to the conventional one having no elution preventing film.
7 and 18 are formed.

Next, a complexing agent solution is prepared by mixing a complexing agent in a solvent. The compounding ratio of the complexing agent solution and the type of the solvent differ depending on the surface state of the conductive filler 2 and the thickness of the elution preventing film 3 formed in the subsequent processing. It is not something to be done.

Next, the circuit board 16 is immersed in a complexing agent solution, pulled up, and then heated. As a result, the solvent is evaporated, and the elution preventing film 3 made of a metal complex is formed on the surface of the conductive filler 2.

Hereinafter, the shape of the produced elution preventing film 3 will be described in detail with reference to FIG. Conductive adhesive layer 17, 1
The conductive adhesive 1 constituting 8 is formed by mixing a conductive filler 2, an organic binder 4, and various additives. The conductive adhesive layers 17 and 18 are formed by heat-curing the conductive adhesive 1 thus configured. At that time, many components (organic binders and the like) other than the conductive filler 2 evaporate by heating. Therefore, the conductive adhesive layers 17 and 18 after the heat curing have a large number of holes 19 from which the evaporation component has escaped (see FIG. 5A).

Many of these holes 19 communicate with each other, and even with the surface of the conductive filler 2. Therefore, the conductive filler 2 exposed on the inner surface of these holes 19 is exposed to the external environment. Therefore, the conductive filler 2 is easily eluted from this portion.

When the conductive adhesive layers 17 and 18 having the above structural features are immersed in the complexing agent solution, the conductive adhesive layers 17 and 18 reach the surface of the conductive filler 2 exposed at the bottom of the communicating holes 19. The complexing agent solution will arrive. Therefore, when the complexing agent solution is heat-treated to form the elution prevention film (metal complex film) 3, the elution prevention film 3 is formed in the hole 19, and is exposed at the bottom of the hole 19. The surface portion of the conductive filler 2 is covered with the elution preventing film 3. Therefore, the elution preventing film 3 can be selectively formed only on the surface portion of the conductive filler 2 where the elution is likely to occur, and the conductive portion between the conductive filler 2 and other electric structures and the conductive filler 2 can be formed. The elution preventing film 3 is not formed at a place where conduction takes place between the two.

Next, examples of the above embodiments will be described.

First, examples of the first embodiment (conductive adhesive) will be described. (Example 1) In this example, the elution preventing film 3 is made of urethane resin in the conductive adhesive 1 shown in Embodiment 1, which is characterized in this point.

Next, a method for manufacturing the conductive adhesive 1 of this embodiment will be described. First, an alcohol solution of a resin is prepared by dissolving and mixing 95.5% by weight of isopropyl alcohol with 0.5% by weight of a urethane resin. The urethane resin has a water absorption of about 0.8% after 24 hours, and has a property of easily absorbing water and an aqueous solution containing hydrogen sulfide or sulfur oxide.
The mixing ratio of the resin alcohol solution to be prepared and the type of the solvent differ depending on the surface state of the conductive filler 2 and the thickness of the elution preventing film 3 to be formed, and thus are not particularly limited to the above-described conditions.

Next, the conductive filler 2 made of silver (Ag) is added to the prepared resin alcohol solution and sufficiently stirred. When the surface of the conductive filler 2 becomes wet with the resin alcohol solution, the conductive filler 2 is taken out of the resin alcohol solution and dried in an oven at 100 ° C. for 30 minutes to sufficiently remove the solvent isopropyl alcohol. Allow to evaporate. Thereby, the elution preventing film 3 made of urethane resin is formed on the surface of the conductive filler 2. The temperature and time for this drying also vary depending on the resin concentration in the solution and the amount of the conductive filler 2 to be processed, and are not specified in the above processing conditions.

As described above, 92% by weight of the conductive filler 2 on which the elution preventing film 3 is formed, 7% by weight of the organic binder 4 made of a thermosetting epoxy resin, and 1% by weight of the additive ( Dispersant, adhesion improver, etc.) to obtain a conductive adhesive of this example.

(Embodiment 2) In this embodiment, in the structure of the conductive adhesive 1 described in Embodiment 1, the resin constituting the elution preventing film 3 is made of urea resin instead of urethane resin. There is a characteristic in this point. The urea resin is a resin having a water absorption of 0.5% by weight / 24h or less and defined as insoluble in water and an aqueous solution containing hydrogen sulfide or sulfur oxide in the present invention. Other conditions, that is, the configuration conditions of the conductive adhesive material, the manufacturing method, and the like are exactly the same as those in the first embodiment.

(Embodiment 3) In this embodiment, in the constitution of the conductive adhesive described in Embodiment 1, the resin constituting the elution preventing film 3 is made of fluororesin instead of urethane resin. There is a feature. Fluororesin is a resin having a water absorption of less than 0.01% by weight / 24 h and is defined as insoluble in water and an aqueous solution containing hydrogen sulfide or sulfur oxide in the present invention. Other conditions,
That is, the configuration conditions, the manufacturing method, and the like of the conductive adhesive material are exactly the same as those in the first embodiment.

Embodiment 4 This embodiment is characterized in that a metal complex containing diethanolamine is used as the elution preventing film 3 in the conductive adhesive of Embodiment 1.

Next, a method of manufacturing the conductive adhesive 1 of this embodiment will be described. First, by dissolving and mixing 90 wt% of isopropyl alcohol with respect to di-ethanol amine <br/> emissions 10% by weight of complexing agent, to prepare an alcoholic solution of the complexing agent. A metal complex obtained by reacting diethanolamine with a metal is an ionic substance and is extremely soluble in water and has a property of easily absorbing water and an aqueous solution containing hydrogen sulfide or sulfur oxide.

The compounding ratio of the complexing agent solution to be prepared and the type of the solvent differ depending on the surface condition of the conductive filler 2 and the thickness of the elution preventing film 3 to be formed. is not.

Next, the conductive filler 2 is added to the prepared complexing agent solution and sufficiently stirred. When the surface of the conductive filler 2 becomes wet with the complexing agent solution, the conductive filler 2 is removed from the complexing agent solution and dried in an oven at 100 ° C. for 30 minutes to remove the solvent isopropyl alcohol. Allow sufficient evaporation. As a result, the diethanolamine and the conductive filler 2 react on the surface of the conductive filler 2, and the elution preventing film 3 made of the metal complex is formed on the conductive filler 2.

Regarding the temperature and time for this drying,
Since it differs depending on the concentration of the complexing agent in the complexing agent solution and the amount of the conductive filler 2 to be treated, the treatment conditions are not specified.

92% by weight of the conductive filler 2 provided with the elution-preventing film 3 as described above, 7% by weight of the organic binder 4 made of epoxy resin, and 1% by weight of the additive
(A dispersant, an adhesion improver, and the like) are dispersed and mixed to obtain a conductive adhesive of this example.

Embodiment 5 In this embodiment, a metal complex of o-aminobenzoic acid is formed as the elution preventing film 3 in the conductive adhesive of Example 4 in place of the metal complex of diethanolamine. There is a characteristic in this point.

The metal complex of diethanolamine is an ionic substance and was soluble in water and an aqueous solution containing hydrogen sulfide or sulfur oxide, whereas the metal complex of o-aminobenzoic acid was non-ionic, In the present invention, a metal complex defined as being insoluble in water and an aqueous solution containing sulfur dioxide or hydrogen sulfide. Comparative Example 1 Comparative Example 1 corresponding to Examples 1 to 5 described above.
Was prepared.

This conductive adhesive is composed of 92% by weight of conductive filler 2 made of silver (Ag), 7% by weight of organic binder 4 made of epoxy resin, and 1% by weight of additives (dispersant, And a dispersion improver.

A conductive adhesive layer was formed using the conductive adhesives 1 of Examples 1 to 5 and Comparative Example 1 produced as described above, and evaluation and measurement were performed according to the following methods.

(1) Evaluation of resistance to ion migration (water drop test) The water drop test is a test method for simply and simply evaluating the migration property of a material. Details of the test method are as follows. As test samples,
A structure similar to the structure of the circuit board described in Embodiment 4 is employed. That is, as shown in FIG.
Comb-shaped electrode-shaped conductive adhesive layers 17 and 18 are formed thereon by a screen printing method. Here, the circuit board 16
, A ceramic substrate is used. Further, the conductive adhesive layers 17 and 18 are opposed to each other so that their electrode tips cross each other in a state of being separated by a predetermined electrode distance (400 μm). Current should not flow during

The conductive adhesive layer 1 thus formed
Deionized water is dropped on the layers 7 and 18 so that the two conductive adhesive layers 1
A DC voltage (1 V) is applied between 7 and 18. Then, the time required for a current to flow due to a short circuit between the conductive adhesive layers 17 and 18 was measured, and the migration resistance was evaluated based on the length of the short circuit time.

(2) Evaluation of anti-sulfuration reactivity As shown in FIG. 6, after a gold-plated electrode 20 is formed on a circuit board 19 made of a glass epoxy substrate, the conductive adhesive 1 is further formed on the gold-plated electrode 20 by a screen printing method. The conductive adhesive layer 21 is formed. And
On the conductive adhesive layer layer 21, a 0216 resistor (terminal plating: SnPb solder) 22 of size 3216 is mounted using a mount mounting machine. Next, in order to cure the conductive adhesive layer layer 21, it is heated in an oven at 150 ° C. for 30 minutes. After measuring the initial connection resistance of the sample prepared in this way, the sample is left to stand in a closed tank filled with hydrogen sulfide, and the change in the connection resistance is measured to evaluate the sulfuration resistance. The test conditions were a temperature of 40 ° C., a humidity of 90%, a hydrogen sulfide concentration of 3 ppm, and a test time of 96 hours.
Time.

Table 1 shows the results of the above evaluation and measurement.

[0075]

[Table 1] In the conductive adhesive 1 of Examples 1 to 5, the following was found as compared with Comparative Example 1. That is, in the evaluation of the resistance to ion migration, the time until current flow was longer than that in Comparative Example 1, and it was confirmed that the resistance to ion migration was improved. Also, in the evaluation of the sulfidation reactivity, the change in the connection resistance before and after the test was smaller than in Comparative Example 1, and it was confirmed that the sulfidation reactivity was improved.

Further, the following can be confirmed by comparing the examples. That is, when Examples 1 to 3 in which the elution preventing film 3 is formed from a resin and Examples 4 and 5 in which the elution preventing film 3 is formed from a metal complex are compared, Example 4,
5, it was confirmed that the ion migration resistance was better. This is because the complex and the conductive filler 2 directly undergo a chemical reaction to form the elution prevention film 3 made of a metal complex, and thus the adhesion strength of the elution prevention film 3 to the conductive filler 2 is increased. It is thought that it is because.

Further, comparing the respective examples, the following facts are found in Examples 1 to 3 having the elution preventing film 3 made of a resin and Examples 4 and 5 having the elution preventing film 3 made of a metal complex. I can say. That is, in the present invention, Examples 2, 3, and 5, in which the elution preventing film 3 is made of a material specified to be insoluble in water and an aqueous solution containing hydrogen sulfide or sulfur oxide, Thus, the evaluation of migration resistance and the evaluation of sulfidation reactivity are improved as compared with Examples 1 and 4 in which the elution preventing film 3 was formed. Further, in Examples 2 and 3 in which the elution preventing film 3 was formed from the above-mentioned material having insolubility, it was found that the higher the degree of insolubility, the higher the evaluation.

Next, examples of the second embodiment (flip-chip mounting structure of a semiconductor device) will be described.

(Embodiment 6) In this embodiment, the conductive adhesive 1 of Embodiment 1 using a urethane resin as the elution preventing film 3 is used.
(However, the only difference is that an epoxy resin having thermoplasticity is used as the organic binder.)
The semiconductor device 6 is flip-chip mounted on the circuit board 5, and this is a feature.

That is, the bump electrode 8 of the semiconductor device 6
Then, the conductive adhesive 1 described in the mounting example 1 is transferred by a known method. Then, the semiconductor device 6 is flip-chip mounted on the circuit board 5 with the transferred conductive adhesive 1 aligned with the input / output terminal electrodes 9 of the circuit board 5. Then, an electrical inspection is performed after the conductive adhesive 1 is cured, and when a good result is obtained, the sealing resin 10 of the epoxy resin is supplied between the circuit board 5 and the semiconductor device 6 to be cured. The connection was sealed to form a flip-chip mounting structure.

(Embodiment 7) In this embodiment, the elution preventing film 3
The flip-chip mounting structure is formed using the conductive adhesive 1 of Example 2 using urea resin as a feature, and is characterized in this point. Except for the conductive adhesive 1, the configuration and the manufacturing method of the flip-chip mounting structure are exactly the same as those of the sixth embodiment.

(Embodiment 8) In this embodiment, the elution preventing film 3
The flip-chip mounting structure is formed using the conductive adhesive of Example 3 using a fluororesin, which is characterized in this point. Configuration of flip-chip mounting structure,
The manufacturing method is exactly the same as that of Example 6 except for the conductive adhesive 1.

[0083] (Embodiment 9) In this embodiment, as the elution preventive film 3, using a conductive adhesive of Example 4 using a metal complex containing a di ethanol amine <br/> down, flip-chip mounting structure It constitutes the body, and is characterized by this point. Except for the conductive adhesive 1, the configuration and the manufacturing method of the flip-chip mounting structure are exactly the same as those of the sixth embodiment.

(Embodiment 10) In this embodiment, a flip-chip mounting structure is constructed using the conductive adhesive of Embodiment 5 using a metal complex containing o-aminobenzoic acid as the elution preventing film 3. This is the characteristic of this point. The configuration and manufacturing method of the flip-chip mounting structure are as follows.
Is exactly the same as Example 6 except for

(Comparative Example 2) A flip-chip mounting structure of Comparative Example 2 was manufactured corresponding to Examples 6 to 10 described above.

This flip-chip mounting structure had the same mounting structure as in Examples 6 to 10 using the conductive adhesive of Comparative Example 1.

Examples 6 to 10 produced as described above
And the flip chip mounting structure of Comparative Example 2,
The reliability was evaluated according to the following method.

That is, a change in connection resistance was measured in a high-temperature, high-humidity environment (85 ° C., 85%) while applying a current (10 mA) during actual use to these flip-chip mounting structures. The evaluation measurement of the migration resistance was carried out. Similarly, the current in actual use (10mA)
Was measured under a hydrogen sulfide atmosphere (40 ° C., 90%, hydrogen sulfide concentration: 3 ppm) while flowing the gas to evaluate the resistance to sulfurization reaction. Table 2 shows the results.

[0089]

[Table 2] In the flip chip mounting structures of Examples 6 to 10, the following was found as compared with Comparative Example 2. That is, in the evaluation of the ion migration resistance, the time until the current flow was longer than that in Comparative Example 2, and it was confirmed that the ion migration resistance was improved. Also, in the evaluation of the sulfurization reactivity, the change in the connection resistance before and after the test was smaller than that in Comparative Example 2, and it was confirmed that the sulfuration reactivity was improved.

Further, the following can be confirmed by comparing the examples. That is, a comparison between Examples 6 to 8 having the elution preventing film 3 made of resin and Examples 9 and 10 having the elution preventing film 3 made of metal complex shows that Example 9
It was confirmed that No. 10 had better ion migration resistance.

Further, comparing the respective examples, the following facts are obtained in Examples 6 to 8 having the elution preventing film 3 made of a resin and Examples 9 and 10 having the elution preventing film 3 made of a metal complex. I can say. That is, in the present invention,
In the embodiments 7, 8 and 10 in which the elution preventing film 3 is made of a material specified to be insoluble in water and an aqueous solution containing hydrogen sulfide or sulfur oxide, the elution preventing film 3 is made of a material which does not. It can be seen that the evaluation of migration resistance and the evaluation of sulfidation reactivity are improved from Examples 6 and 9 configured. Further, in Examples 7 and 8 in which the elution preventing film 3 was formed from the material defined as having the above-mentioned insolubility, it is understood that the higher the degree of insolubility, the higher the evaluation.

As described above, the same effects as in Examples 1 to 5 (conductive adhesive) can be obtained also in Examples 6 to 10 (flip chip mounting structure).

In the sixth to tenth embodiments, the semiconductor device 6
The electrical connection between the substrate and the circuit board 5 is performed using the conductive adhesive 1 having the organic binder 4 made of a thermoplastic epoxy resin, but using the thermosetting epoxy resin as in the first embodiment. Needless to say, the same effect is exhibited.

In Examples 6 to 10, the elution preventing film 3 was used.
However, this may hinder the electrical connection between the connection points (the conductive filler 2 and the bump electrode 8, the conductive fillers 2, and the conductive filler 2 and the input / output terminal electrode 9). However, when performing the flip-chip mounting, the circuit board 5 and the semiconductor device 6 are crimped. At this time, the elution preventing film 3 at the location where the pressure is applied (the connection location) is damaged, and the connection location is damaged. Since they are directly electrically connected, they do not hinder the connection.

Next, examples of the third embodiment (chip component mounting structure) will be described.

(Embodiment 11) This embodiment is a chip component mounting structure manufactured using the conductive adhesive of Embodiment 1. In the first embodiment, the elution preventing film 3 made of urethane resin is provided. This chip component mounting structure is a circuit board 11 (30 mm × 60 m) made of a glass epoxy substrate.
After forming the electrodes 12 by gold (Au) plating with a thickness of 1.6 mm), five chip resistors 13 (3216 size, SnPb plating) and two chip coils 14 (diameter 8 mm)
φ, height 4 mm) and four chip capacitors 15 (32
16 size, SnPb plating).

This chip component mounting structure was manufactured as follows. First, the conductive adhesive 1 is screen-printed on the electrode 12 of the circuit board 11. And chip part 1
3, 14 and 15 were converted to electrodes 1 using existing component mounting equipment.
After being mounted on 2, the conductive adhesive 1 was cured by heating in an oven at 150 ° C. for 30 minutes.

(Embodiment 12) In this embodiment, a chip component mounting structure is formed using the conductive adhesive 1 of Embodiment 2, which is characterized in this point. In Example 2, urea resin is used as the elution prevention film 3. The configuration and the manufacturing method of the chip component mounting structure are exactly the same as those of Example 11 except for the conductive adhesive 1.

(Embodiment 13) In this embodiment, a chip component mounting structure is formed by using the conductive adhesive of Embodiment 3, which is characterized in this point. In the third embodiment, a fluorine resin is used as the elution prevention film 3. The configuration and the manufacturing method of the chip component mounting structure are exactly the same as those of Example 11 except for the conductive adhesive 1.

(Embodiment 14) In this embodiment, a chip component mounting structure is formed by using the conductive adhesive 1 of Embodiment 4, which is characterized in this point. As elution preventive film 3 in Example 4, a metal complex containing a di ethanol <br/> Ruamin. The configuration and the manufacturing method of the chip component mounting structure are exactly the same as those of Example 11 except for the conductive adhesive 1.

(Embodiment 15) In this embodiment, a chip component mounting structure is formed using the conductive adhesive 1 of Embodiment 5, which is characterized in this point. In the fifth embodiment,
As the elution preventing film 3, a metal complex containing o-aminobenzoic acid is used. The configuration and the manufacturing method of the chip component mounting structure are exactly the same as those of the eleventh embodiment except for the conductive adhesive 1.

Comparative Example 3 A chip component mounting structure of Comparative Example 3 was manufactured corresponding to Examples 11 to 15 described above.

This chip component mounting structure had the same mounting structure as in Examples 11 to 15 after using the conductive adhesive of Comparative Example 1.

The reliability of the chip component mounting structure manufactured as described above and the chip component mounting structure of Comparative Example 3 were evaluated in the same manner as in Examples 6 to 10 and Comparative Example 2. Table 3 shows the results.

[0105]

[Table 3] In the chip component mounting structures of Examples 10 to 15, the following was found as compared with Comparative Example 3. That is, in the evaluation of the ion migration resistance, the time until the current flow was longer than that in Comparative Example 3, and it was confirmed that the ion migration resistance was improved. Also, in the evaluation of the sulfidation reactivity, the change in the connection resistance before and after the test was smaller than that in Comparative Example 3, confirming that the sulfidation reactivity was improved.

Further, the following can be confirmed by comparing the examples. That is, Examples 11 to 13 having the resin elution preventing film 3 and the metal complex
Comparing with Examples 14 and 15, which constituted the above, it was confirmed that Examples 14 and 15 had better ion migration resistance.

When comparing the examples, it is found that Examples 11 to 13 having the elution preventing film 3 made of resin also
Examples 14 and 1 having an elution prevention film 3 made of a metal complex
The following can also be said in FIG. That is, in the present invention, Examples 12, 13 and 15 in which the elution preventing film 3 is made of a material specified as having insolubility in water and an aqueous solution containing hydrogen sulfide or sulfur oxide, 11 and 14 in which the elution preventing film 3 was formed from
This shows that the evaluation of migration resistance and the evaluation of sulfidation reactivity are improved. Further, in Examples 12 and 13 in which the elution preventing film 3 was formed from the above-mentioned material having insolubility, it was found that the higher the degree of insolubility, the higher the evaluation.

As described above, in Examples 11 to 15 (chip component mounting structure), Examples 1 to 5 (conductive adhesive) and
The same effects as those of the sixth to tenth embodiments (flip chip mounting structure) can be obtained.

Hereinafter, examples of the fourth embodiment of the present invention will be described. (Embodiment 16) A circuit board 6 (see FIG. 4) having the same structure as that prepared for the evaluation measurement in Embodiments 1 to 5 is prepared. Then, the conductive adhesive layers 17 and 18 are formed on the circuit board 6 using the conductive adhesive of Comparative Example 1 (conventional example). The method of forming the conductive adhesive layers 17 and 18 is the same as that of the test samples of Examples 1 to 5 and Comparative Example 1.

Next, a complexing agent solution is prepared by mixing 90% by weight of isopropyl alcohol with 10% by weight of o-aminobenzoic acid. Note that, depending on the surface condition of the conductive filler 2 and the thickness of the elution preventing film 3 formed in the subsequent treatment, the compounding ratio of the complexing agent solution and the type of solvent are different. However, the present invention is not limited to this.

The circuit board 16 was immersed in the complexing agent solution for 30 seconds, pulled up, and dried at 100 ° C. for 30 minutes, so that the conductive filler 2 contained in the conductive adhesive layers 17 and 18 was added to the metallic filler 2. While forming the elution prevention film 3 made of a complex, isopropyl alcohol is evaporated. Thus, a test sample shown in FIG. 4 was obtained.

The test samples prepared as described above are structurally similar to the test samples of Examples 1 to 5, which are examples of the first embodiment. For this reason, this embodiment is referred to as Embodiments 1 to 5.
In order to compare with the above, an evaluation test was performed according to the same test method as in Examples 1 to 5. The results are also shown in Table 1 above.

As a result, in the mounting structure manufactured by the manufacturing method of the present embodiment, in the evaluation of the resistance to ion migration, the elution preventing film 3 was previously formed on the conductive filler 2 in the same manner as in Examples 1 to 5. It was confirmed that the following characteristics were obtained. In addition, in the evaluation of the sulfidation reactivity, it was confirmed that there was no increase in the connection resistance, and that the absolute value of the connection resistance was lower than the maximum values of Examples 1 to 5.

Example 17 A flip-chip mounting structure having the same configuration as that of Comparative Example 2 is formed. However, at this time, the gap between the semiconductor device 6 and the circuit board 5 is not sealed with the sealing resin 10. In this state, the same complex processing agent as in Example 16 is injected into the gap between the semiconductor device 6 and the circuit board 5 using a syringe. And 100 ° C
For 30 minutes to form an elution prevention film 3 made of a metal complex on the surface of the conductive filler 3, and the solvent was further evaporated.

Next, a test sample of the flip-chip mounting structure was obtained by injecting the sealing resin 10 into the gap between the semiconductor device 6 and the circuit board 5 and curing the resin.

The test samples prepared as described above are structurally similar to the test samples of Examples 6 to 10, which are examples of the second embodiment. Therefore, the present embodiment is referred to as Embodiments 6 to
For comparison with No. 10, an evaluation test was performed according to the same test method as in Examples 6 to 10. The results are also shown in Table 2 above.

As a result, in the flip chip mounting structure manufactured by the manufacturing method of the present embodiment, in the evaluation of the resistance to ion migration, the elution preventing film 3 was formed on the conductive filler 2 in advance. It was confirmed that characteristics equivalent to those obtained were obtained. Also, in the evaluation of the sulfidation reaction resistance, it was confirmed that there was no increase in the connection resistance, and that the absolute value of the connection resistance was lower than the maximum values of Examples 6 to 10.

(Embodiment 18) A chip component mounting structure having the same configuration as that of Comparative Example 3 is formed. Then, it was immersed in the same complexing agent solution as the complexing agent solution used in Example 16 for 30 seconds, pulled up, and then dried at 100 ° C. for 30 minutes to obtain a conductive material contained in the conductive adhesive layer 21. Filler 2
Next, an elution preventing film 3 made of a metal complex is formed, and isopropyl alcohol is evaporated. Thus, a test sample shown in FIG. 6 was obtained.

The test samples prepared as described above are structurally similar to the test samples of Examples 11 to 15 which are examples of the third embodiment. Therefore, this embodiment is referred to as Embodiment 1.
For comparison with 1 to 15, an evaluation test was performed in accordance with the same test method as in Examples 11 to 15. The results are also shown in Table 3 above.

As a result, in the chip component mounting structure manufactured by the manufacturing method of this embodiment, in the evaluation of the resistance to ion migration, the elution preventing films 3 were formed on the conductive filler 2 in advance. It was confirmed that characteristics equivalent to those obtained were obtained. Also, in the evaluation of the sulfidation reactivity, it was confirmed that there was no increase in the connection resistance, and that the absolute value of the connection resistance was lower than the maximum values of Examples 11 to 15.

[0121]

As described above, according to the present invention, it is possible to obtain a mounting structure having better ion migration resistance or sulfurization reaction resistance than the conventional one.

When the present invention is applied to a mounting structure such as a flip-chip mounting structure or a chip component mounting structure, it is possible to reduce a connection interval between electrodes and the like in order to improve insulation reliability. It is also possible to realize space saving of the mounting structure.

Further, according to the present invention, since the reliability of the sulfidation reaction is improved, it can be applied to products which may be used in a gas atmosphere containing a large amount of sulfur, such as near a hot spring or near a volcano. It can be expected that the use will be greatly expanded.

[Brief description of the drawings]

FIG. 1 is an enlarged view of a main part of a conductive adhesive according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a flip chip mounting structure according to a second embodiment of the present invention;

FIG. 3 is a plan view of a chip component mounting structure according to a third embodiment of the present invention.

FIG. 4 is a plan view of a circuit board manufactured by a method according to Embodiment 4 of the present invention.

FIG. 5 is a cross-sectional view of a conductive adhesive layer manufactured by the method of Embodiment 4.

FIG. 6 is a plan view of a test sample used in the evaluation of resistance to sulfidation reactivity.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Conductive adhesive 1A Conductive adhesive layer 2 Conductive filler 3 Elution prevention film 4 Organic binder 5 Circuit board 6 Semiconductor device 7 IC board 8 Bump electrode 9 I / O terminal electrode 10 Sealing resin 11 Circuit board 12 Electrode 13 Chip Resistance 14
Chip coil 15 Chip capacitor 16
Circuit board 17, 18 Conductive adhesive layer 19
Hole 19 Circuit board (glass epoxy board) 20 Gold-plated electrode 21 Conductive adhesive layer 22 0Ω resistance

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takashi Kitae 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Riki 1006 Odaka Kadoma Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. (72) Inventor Tsukasa Shiraishi 1006 Kazuma Kadoma, Osaka Pref. Matsushita Electric Industrial Co., Ltd. (72) Inventor Yoshihiro Bessho 1006 Odaka Kazuma Kadoma, Osaka Pref. Matsushita Electric Industrial Co., Ltd. (56) JP-A-10-340625 (JP, A) JP-A-4-268381 (JP, A) JP-A-7-161769 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/60 C09J 9/02 C09J 201/00 H05K 3/32

Claims (14)

(57) [Claims] 1. An electric structure, comprising: a conductive adhesive layer provided on the electric structure; the conductive adhesive layer having a conductive filler; and at least a part of the conductive filler. has the elution preventive film, the elution preventive film is seen containing a metal complex, said conductive filler is at least partially the conductive
Exposed on the surface of the conductive adhesive layer,
At least at the exposed portion, the conductive adhesive layers communicate with each other and
It has a large number of holes communicating with the surface,
At least a portion of the filler is exposed on the inner surface of the hole.
And the elution preventing film is exposed at least on the inner surface of the pore.
A mounting structure provided on the conductive filler . 2. An electric structure, and an electric structure provided on the electric structure.
A conductive adhesive layer provided, wherein the conductive adhesive layer is conductive.
Having an electrically conductive filler, at least one of the electrically conductive fillers
Some are exposed to the external environment, and
A mounting structure having a dissolution preventing film only . 3. The mounting structure according to claim 2 , wherein the elution preventing film includes a metal complex . 4. A mounting structure according to claim 1 or 2, have other electrical structures disposed on said electric structure
And the conductive adhesive layer is provided on the electrical structure with the other electrical structure.
A mounting structure for electrically connecting structures. 5. A mounting structure according to claim 1 or 2, constituting the elution preventive film of water insoluble material, mounting structure, characterized in that. 6. A mounting structure according to claim 1 or 2, a mounting structure wherein an elution preventive film constituting the insoluble material in an aqueous solution containing hydrogen sulfide or sulfur oxide, characterized in that . 7. A mounting structure according to claim 1 or 2, a mounting structure wherein the conductive filler comprises silver, it is characterized. 8. The mounting structure according to claim 4 , wherein the electric structure is a circuit board, and the other electric structure is an electronic component mounted on the circuit board. Mounting structure. 9. The mounting structure according to claim 8, wherein the other electric structure is a semiconductor device that is flip-chip mounted on an electric structure formed of the circuit board. Mounting structure. 10. An electric structure having a conductive filler.
Forming a conductive adhesive layer, and after the conductive adhesive layer is cured, a surface of the conductive adhesive layer.
An elution prevention film is formed on the conductive filler communicating with the surface.
A method for manufacturing a mounting structure, comprising: 11. Manufacturing of the mounting structure according to claim 10.
The method, wherein after the conductive adhesive layer is cured, the conductive adhesive layer
A complexing treatment to form the elution prevention film . 12. Manufacturing of the mounting structure according to claim 10.
The method, wherein the conductive adhesive layer is provided on the electrical structure with another electrical structure.
A method for manufacturing a mounting structure , comprising electrically connecting objects . 13. Manufacturing of the mounting structure according to claim 12.
The method, wherein the electrical structure is a circuit board and the other electrical structure
Is an electronic component mounted on the circuit board . 14. Manufacturing of the mounting structure according to claim 12.
The method, wherein the electrical structure is a circuit board and the other electrical structure
Is a semiconductor device to be flip-chip mounted on the circuit board.
A method for manufacturing a mounting structure, comprising: