JP3278251B2 - Plasma carburizing and quenching method - Google Patents
Plasma carburizing and quenching methodInfo
- Publication number
- JP3278251B2 JP3278251B2 JP19305893A JP19305893A JP3278251B2 JP 3278251 B2 JP3278251 B2 JP 3278251B2 JP 19305893 A JP19305893 A JP 19305893A JP 19305893 A JP19305893 A JP 19305893A JP 3278251 B2 JP3278251 B2 JP 3278251B2
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- Prior art keywords
- plasma carburizing
- plasma
- gas
- carburizing
- treatment
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、プラズマ浸炭焼入方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for plasma carburizing and quenching.
【０００２】[0002]
【従来技術】浸炭焼入方法には、特開平２−１２５８５
７号公報に示すように、プラズマ浸炭焼入方法がある。
このプラズマ浸炭焼入方法は、真空雰囲気中で、炉体を
陽極、被加工物を陰極とし、その両極間に直流高電圧の
プラズマ放電を浸炭ガス（プロパンガス）中のＣを媒体
とすることで発生させ、Ｃをイオン化（Ｃ+ ）した状態
で該被加工物に侵入させる処理であり、一般には、その
プラズマ浸炭焼入方法は、積重ねられた複数の被加工物
に対して行われる。2. Description of the Related Art A carburizing and quenching method is disclosed in Japanese Unexamined Patent Publication No.
As shown in Japanese Patent Publication No. 7, there is a plasma carburizing and quenching method.
In this plasma carburizing and quenching method, a furnace body is used as an anode and a workpiece is used as a cathode in a vacuum atmosphere, and a DC high-voltage plasma discharge is used between C and C in a carburizing gas (propane gas) as a medium. This is a process in which C is ionized (C + ) and penetrates into the workpiece in a state of being ionized. In general, the plasma carburizing and quenching method is performed on a plurality of workpieces stacked.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記プラズマ
浸炭焼入方法においては、積重ねられた一部の被加工物
間に、絶縁性を有する異物が介在（進入）する可能性が
あり、そのようなときには、その被加工物においては通
電不可能となり、浸炭異常を生じることになる。しか
も、この場合、プラズマ浸炭焼入方法における加工要因
としての温度、時間、浸炭ガス、放電電流（電流密度）
は変動せず、浸炭異常をプロセス中で発見することは困
難である。However, in the above-mentioned plasma carburizing and quenching method, there is a possibility that foreign matter having an insulating property may intervene (enter) between some of the stacked workpieces. In such a case, power cannot be supplied to the workpiece, and abnormal carburization occurs. Moreover, in this case, temperature, time, carburizing gas, discharge current (current density) as processing factors in the plasma carburizing and quenching method.
Does not fluctuate and it is difficult to detect carburizing anomalies in the process.
【０００４】本発明は上記実情に鑑みてなされたもの
で、その第１の目的は、積重ねられた一部の被加工物間
に、絶縁性を有する異物が介在するとしても、浸炭異常
が生じることを防止できるプラズマ浸炭焼入方法を提供
することにある。また、第２の目的は、浸炭異常を容易
に検出できるプラズマ浸炭焼入方法を提供することにあ
る。The present invention has been made in view of the above circumstances, and a first object of the present invention is to cause abnormal carburization even when an insulating foreign substance is interposed between some stacked workpieces. It is an object of the present invention to provide a plasma carburizing and quenching method capable of preventing the occurrence of such a problem. A second object is to provide a plasma carburizing and quenching method that can easily detect a carburizing abnormality.
【０００５】[0005]
【課題を解決するための手段、作用】上記第１の目的を
達成するためにに本発明（第１の発明）にあっては、積
重ねられた複数の被加工物に対してプラズマ浸炭処理を
行うプラズマ浸炭焼入方法において、プラズマ放電を発
生させない状態の下で、炭化水素系ガスを前記被加工物
に対する通電被膜生成用ガスとして供給して、所定の通
電被膜形成時間を経過させた後に、前記プラズマ浸炭処
理を行う構成としてある。上述の構成により、仮に、積
重ねられた一部の被加工物間に、絶縁性を有する異物が
介在（進入）されても、プラズマ浸炭処理の前工程にお
ける炭化水素系ガスが、上記異物に基づいて形成された
被加工物間の隙間に進入して、その隙間に通電被膜を形
成することになり、その通電被膜を介して被加工物は通
電可能となることになる。このため、積重ねられた一部
の被加工物間に、絶縁性を有する異物が介在するとして
も、浸炭異常が生じることを防止できることになる。In order to achieve the first object, according to the present invention (first invention), a plasma carburizing process is performed on a plurality of stacked workpieces. In the plasma carburizing and quenching method to be performed, under a state in which plasma discharge is not generated, a hydrocarbon-based gas is supplied as an energized coating generation gas for the workpiece, and after a predetermined energized coating formation time has elapsed, The plasma carburizing treatment is performed. With the above-described configuration, even if an insulating foreign material is interposed (entered) between some of the stacked workpieces, the hydrocarbon-based gas in the previous process of the plasma carburizing process is based on the foreign material. Then, the conductive material enters the gap between the workpieces formed by the above-described process, and forms an energized coating in the gap, so that the workpiece can be energized through the energized coating. For this reason, even if a foreign substance having an insulating property is interposed between some of the stacked workpieces, it is possible to prevent occurrence of abnormal carburization.
【０００６】また、前述の第２の目的を達成するために
本発明（第２の発明）にあっては、積重ねられた複数の
被加工物に対してプラズマ浸炭処理を行うプラズマ浸炭
焼入方法において、前記プラズマ浸炭処理時に、水素ガ
スを供給して、発光の有無を放電異常検出のために検出
する構成としてある。上述の構成により、プラズマ浸炭
処理時に水素ガスが存在することから、プラズマ放電が
生じるときには、水素ガスに基づいて発光し、プラズマ
放電が生じないときには、水素ガスに基づく発光は生じ
なくなり、この発光の有無を検知することにより、放電
異常か否かを検出することができることになる。このた
め、浸炭異常を容易に検出できることになる。In order to achieve the second object, the present invention (second invention) provides a plasma carburizing and quenching method for performing plasma carburizing on a plurality of stacked workpieces. In the above structure, a hydrogen gas is supplied at the time of the plasma carburizing treatment, and the presence or absence of light emission is detected for detecting abnormal discharge. With the above-described configuration, since hydrogen gas is present during the plasma carburizing process, when plasma discharge occurs, light is emitted based on the hydrogen gas, and when no plasma discharge occurs, light emission based on the hydrogen gas is not generated. By detecting the presence or absence, it is possible to detect whether or not the discharge is abnormal. For this reason, abnormal carburization can be easily detected.
【０００７】[0007]
【実施例】以下、本発明の実施例を説明する。先ず、複
数の金属材料（例えばＳＣＲ４２０Ｈ）としての被加工
物を用意し、それらを積重ね、それらに対して、図１に
示すように、昇温処理、均熱処理、クリ−ンアップ処理
を順次、施す。上記各処理は、プラズマ浸炭処理の前工
程として既知のものであり、この各処理後、連続的にプ
ラズマ浸炭処理を行うため、該各処理は、プラズマ浸炭
処理を行う炉内において真空雰囲気中で行われる。上記
昇温処理は、本実施例においては、上記複数の被加工物
を９００〜１０００℃の所定温度まで昇温させるもので
あり、上記均熱処理は、その複数の被加工物全体を上記
所定温度に均一にするために行われる。上記クリ−ンア
ップ処理は、表面酸化膜を除去するために行われ、この
ため、このクリ−ンアップ処理に際して、Ｈ2 ガスを供
給して放電が行われる。Embodiments of the present invention will be described below. First, a plurality of workpieces as metal materials (for example, SCR420H) are prepared, stacked, and sequentially subjected to a temperature increasing process, a soaking process, and a cleanup process as shown in FIG. . Each of the above-mentioned processes is known as a pre-process of the plasma carburizing process, and after each of the processes, the plasma carburizing process is continuously performed. Therefore, each of the processes is performed in a vacuum atmosphere in a furnace for performing the plasma carburizing process. Done. In the present embodiment, the temperature raising process raises the temperature of the plurality of workpieces to a predetermined temperature of 900 to 1000 ° C., and the soaking process heats the entire plurality of workpieces to the predetermined temperature. This is done to make it even. The chestnut - N'appu process is performed to remove the surface oxide film, Therefore, the chestnut - during N'appu treatment, discharge is performed by supplying H 2 gas.
【０００８】上記各処理に続いて、プラズマ浸炭処理を
行うが、本実施例においては、そのプラズマ浸炭処理に
先立ち、炭化水素系ガスとしてプロパンガス（Ｃ3 Ｈ8
ガス）を供給する。先ず、上記プラズマ浸炭処理につい
て説明すると、このプラズマ浸炭処理自体は、既知の如
く、被加工物に対して浸炭を行うものであるが、特に真
空雰囲気中で行われることを利用して該被加工物に表面
異常層を形成させないために採用されている。このプラ
ズマ浸炭処理は、具体的には、図２に示す装置により行
われる。この装置は、プラズマ浸炭処理の前工程である
前記昇温処理、均熱処理、クリ−ンアップ処理をも行う
ことになっており、このため、先ず、図２において、炉
１内の陰極２上に被加工物３を載置した状態で、炉１内
を真空ポンプ４により真空雰囲気とし、その真空雰囲気
中で、高圧及び加熱電源５に（加熱制御系６を介して）
接続されるヒ−タ７に基づいて被加工物３を一定温度ま
で加熱し（以上、昇温、均熱処理）、次に、Ｈ2 ガスを
Ｈ2 ガス供給源８からバルブ９を介して炉１内に供給し
て放電し（以上、クリ−ンアップ処理）、次いで、後述
のプラズマ浸炭処理に先立つＣ3 Ｈ8 ガス供給を行う。
そして、この後、プラズマ浸炭処理として、放電用電極
（陽極）を兼ねる前記ヒ−タ７と陰極２との間にＣ3 Ｈ
8 ガス１０をＣ3 Ｈ8 ガス供給源１１からバルブ１２を
介して供給し、高圧及び加熱電源５により前記両極に直
流高電圧を加えてグロ−放電を生じさせる。これによ
り、活性化炭素イオン１３が発生し、この活性化炭素イ
オン１３が被加工物３表面に衝突して鉄と結びつくこと
になる。尚、図２中、実線の矢印はイオン流、破線の矢
印は炭素の拡散を示す。また、１４は温度測定子、１５
は温度調整系、１６は真空シ−ルである。[0008] Plasma carburizing treatment is performed following each of the above treatments. In this embodiment, prior to the plasma carburizing treatment, propane gas (C 3 H 8) is used as a hydrocarbon-based gas.
Gas). First, the plasma carburizing process will be described. The plasma carburizing process itself is, as is known, for carburizing a workpiece. In particular, the plasma carburizing process is performed in a vacuum atmosphere. It is adopted to prevent the surface from forming an abnormal layer on the object. This plasma carburizing treatment is specifically performed by the apparatus shown in FIG. This apparatus is also supposed to perform the above-mentioned temperature raising treatment, soaking treatment, and clean-up treatment which are the pre-processes of the plasma carburizing treatment. Therefore, first, in FIG. With the workpiece 3 placed thereon, the furnace 1 is evacuated to a vacuum atmosphere by a vacuum pump 4, and a high pressure and a heating power supply 5 are supplied to the furnace 1 (via a heating control system 6) in the vacuum atmosphere.
The workpiece 3 is heated to a certain temperature based on the heater 7 connected thereto (the above is referred to as temperature raising and soaking), and then H 2 gas is supplied from the H 2 gas supply source 8 through the valve 9 to the furnace. 1 and discharge (clean-up treatment), and then supply of C 3 H 8 gas prior to the plasma carburizing treatment described later.
Then, as a plasma carburizing treatment, C 3 H is interposed between the heater 7 and the cathode 2 also serving as a discharge electrode (anode).
An 8 gas 10 is supplied from a C 3 H 8 gas supply source 11 via a valve 12, and a DC high voltage is applied to both electrodes by a high voltage and heating power supply 5 to generate a glow discharge. As a result, activated carbon ions 13 are generated, and the activated carbon ions 13 collide with the surface of the workpiece 3 and bind to iron. In FIG. 2, the solid arrow indicates the ion flow, and the broken arrow indicates the diffusion of carbon. 14 is a temperature measuring element, 15
Is a temperature control system, and 16 is a vacuum seal.
【０００９】次に、上記プラズマ浸炭処理に先立つＣ3
Ｈ8 ガス供給についてであるが、これは、被加工物に通
電被膜を形成するために行われる。すなわち、図３に示
すように、仮に、積重ねられた被加工物３間に、絶縁性
を有する異物１７が介在されても、プラズマ浸炭処理の
前工程におけるＣ3 Ｈ8 ガス１０を、上記異物１７に基
づいて形成された被加工物３間の隙間１８に進入させて
（図３中、矢印参照）、その隙間１８に通電被膜１９を
形成し（被加工物に対する物理吸着）、その通電被膜１
９を介して、積重ねられた被加工物３間を通電可能とす
るのである。これにより、積重ねられた一部の被加工物
３間に、絶縁性を有する異物１７が介在したとしても、
プラズマ浸炭処理を適切に行うことができることにな
る。この場合、Ｃ3 Ｈ8 ガス１０の供給には、前記Ｃ3
Ｈ8 ガス供給源１１、バルブ１２が利用されるが、想定
する前記隙間の長さに応じて、Ｃ3 Ｈ8 ガス供給量、供
給時間が適宜決定されることになっており、本実施例に
おいては、隙間の長さを最大１０mm程度に想定して、Ｃ
3 Ｈ8 ガス供給量を１（ｌ（リッタ）／ｍｉｎ）、供給
時間を１分とされている。Next, C 3 prior to the plasma carburizing treatment is performed.
Regarding the H 8 gas supply, this is performed to form a current-carrying coating on the workpiece. That is, as shown in FIG. 3, even if foreign matter 17 having insulating properties is interposed between the stacked workpieces 3, the C 3 H 8 gas 10 in the pre-process of the plasma carburizing treatment is removed by the foreign matter. 17 (see the arrow in FIG. 3), and a current-carrying film 19 is formed in the gap 18 (physical adsorption to the workpiece). 1
Through 9, it is possible to conduct electricity between the stacked workpieces 3. Thereby, even if the foreign matter 17 having an insulating property is interposed between some of the workpieces 3 stacked,
The plasma carburizing process can be performed appropriately. In this case, the supply of C 3 H 8 gas 10, the C 3
Although the H 8 gas supply source 11 and the valve 12 are used, the supply amount and the supply time of the C 3 H 8 gas are determined appropriately according to the assumed length of the gap. In, assuming that the length of the gap is about 10 mm at the maximum,
The supply amount of 3 H 8 gas is 1 (l (liter) / min), and the supply time is 1 minute.
【００１０】次に、上記プラズマ浸炭処理後、拡散処
理、徐冷処理等を施す。上記拡散処理は、綱としての被
加工物３中に進入したＣを内部へ浸透させる処理であ
り、上記徐冷処理は浸炭、拡散処理後にゆっくりと冷却
（例えば冷却速度７℃／分程度）させる処理であり、こ
れらは、プラズマ浸炭処理において既知とされている。Next, after the plasma carburizing treatment, a diffusion treatment, a slow cooling treatment and the like are performed. The diffusion process is a process of permeating the C that has entered the workpiece 3 as a rope into the inside, and the slow cooling process is slowly cooled (for example, at a cooling rate of about 7 ° C./min) after the carburizing and diffusion processes. Treatments, which are known in plasma carburizing treatments.
【００１１】したがって、上記プラズマ浸炭焼入方法に
おいては、プラズマ浸炭処理に先立ち、Ｃ3 Ｈ8 ガス１
０を供給して通電被膜１９を形成することから、積重ね
られた一部の被加工物３間に、絶縁性を有する異物１７
が介在したとしても、浸炭異常が生じることを防止でき
ることになる。Therefore, in the plasma carburizing and quenching method, the C 3 H 8 gas 1
0 is supplied to form the conductive film 19, the foreign matter 17 having an insulating property is formed between some of the stacked workpieces 3.
Even if the steel sheet intervenes, the occurrence of abnormal carburization can be prevented.
【００１２】上記効果を裏付けるため、均熱処理、クリ
−ンアップ処理、プラズマ浸炭処理、拡散処理の各工程
後の体積固有抵抗値を測定するテストを行った。具体的
には、下記条件の下で測定を行った。 （１）テスト内容 図４に示すように、陰極２上に被加工物３を重ねて２つ
設け、その被加工物３間に絶縁材１７を介在させたもの
を、５組用意する。次に、図５に示すように、第１の組
に対して、均熱処理後、一定温度になるまで徐冷を施
し、第２の組に対して、均熱処理、クリ−ンアップ処理
後、一定温度になるまで徐冷を施し、第３の組に対し
て、均熱処理、クリ−ンアップ処理、プラズマ浸炭処理
に先立つＣ3 Ｈ8 ガス供給処理の後、一定温度になるま
で徐冷を施し、第４の組に対して、均熱処理、クリ−ン
アップ処理、プラズマ浸炭処理に先立つＣ3 Ｈ8 ガス供
給処理、プラズマ浸炭処理の後、一定温度になるまで徐
冷を施し、第５の組に対して、均熱処理、クリ−ンアッ
プ処理、プラズマ浸炭処理に 先立つＣ3 Ｈ8 ガス供給
処理、プラズマ浸炭処理、拡散処理の後、一定温度にな
るまで徐冷を施す。この場合、各処理は１０００℃の下
で行う。次に、図４に示すように、測定具２０を用い
て、体積固有抵抗値を測定する。 （２）供試材とその荷姿 被加工物：リングギヤ（直径２０ｍｍ ＳＣＲ４２０
Ｈ） 絶縁材：窒化珪素セラミック １０ｍｍIn order to confirm the above effects, tests were conducted to measure the volume resistivity after each of the steps of soaking, clean-up, plasma carburizing, and diffusion. Specifically, the measurement was performed under the following conditions. (1) Test Content As shown in FIG. 4, two workpieces 3 are provided on the cathode 2 in an overlapping manner, and five sets of the workpieces 3 with the insulating material 17 interposed therebetween are prepared. Next, as shown in FIG. 5, after the soaking treatment, the first set is gradually cooled until a constant temperature is reached, and the second set is subjected to the soaking treatment and the clean-up treatment, and thereafter, the constant cooling is performed. subjected to slow cooling to a temperature, for the third set, soaking, chestnut - N'appu process, after the C 3 H 8 gas supply process prior to plasma carburization treatment, subjected to slow cooling to a constant temperature, The fourth set is subjected to soaking, clean-up treatment, C 3 H 8 gas supply treatment prior to plasma carburizing treatment, and plasma carburizing treatment, and then gradually cooled to a constant temperature to form a fifth set. On the other hand, after a soaking heat treatment, a clean-up treatment, a C 3 H 8 gas supply treatment, a plasma carburizing treatment, and a diffusion treatment prior to the plasma carburizing treatment, a slow cooling is performed to a constant temperature. In this case, each process is performed at 1000 ° C. Next, as shown in FIG. 4, the volume resistivity is measured using the measuring tool 20. (2) Test material and its packaging Workpiece: Ring gear (diameter 20 mm SCR420
H) Insulation material: Silicon nitride ceramic 10mm
【００１３】上記テストの結果、下記表１に示す内容を
得た。As a result of the above test, the contents shown in Table 1 below were obtained.
【００１４】[0014]
【表１】 [Table 1]
【００１５】上記テスト結果によれば、プラズマ浸炭処
理に先立つＣ3 Ｈ8 ガス供給処理後の体積固有抵抗値
が、その前工程の体積固有抵抗値に比べて格段に小さく
なり、Ｃ3 Ｈ8 ガスが被加工物表面に付着して、複数の
被加工物において通電状態を確保していることを示し
た。According to the above test results, the volume resistivity after the C 3 H 8 gas supply treatment prior to the plasma carburizing treatment is much smaller than the volume resistivity in the preceding process, and the C 3 H 8 It was shown that the gas adhered to the surface of the workpiece, and the plurality of workpieces maintained an energized state.
【００１６】図６、図７は他の実施例を示すものであ
る。この他の実施例において、前記実施例と同一構成要
素については同一符号を付してその説明を省略する。こ
の実施例においては、プラズマ浸炭処理時に、Ｃ3 Ｈ8
ガスだけででなく、前記実施例に係るＨ2 ガス供給源
８、バルブ９を利用してＨ2 ガスが供給されることにな
っており、その供給割合Ｃ3 Ｈ8 ／Ｈ2 は１／１〜４／
１とされる。これにより、プラズマ浸炭処理時において
は、プラズマ放電が正常に生じるときには、Ｈ2 ガスに
基づいて紫色に発光し、プラズマ放電が生じないときに
は、Ｈ2 ガスに基づく発光は生じなくなる。一方、複数
の被加工物３の最上段のものが、カラ−カメラ２１によ
り監視されることになっており、その監視信号が画像解
析装置２２に入力されることになっている。画像解析装
置２２は、放電開始後から画像解析を行い、所定時間以
上、発光がないと判断したときには、放電異常と判定す
ることになっており、本実施例においては、放電異常と
判定したときには、該画像解析装置２２から高圧及び加
熱電源５に停止信号が出力されることになっている。し
たがって、、本実施例においては、Ｈ2 ガスに基づく紫
色の発光の有無により、浸炭異常を容易に検出できるこ
とになる。尚、上記浸炭異常検出システムを前記実施例
に係る浸炭異常防止システムと共に用いてもよい。FIGS. 6 and 7 show another embodiment. In other embodiments, the same components as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted. In this embodiment, during the plasma carburizing process, C 3 H 8
Not only the gas but also the H 2 gas is supplied using the H 2 gas supply source 8 and the valve 9 according to the embodiment, and the supply ratio C 3 H 8 / H 2 is 1 / 1-4 /
It is set to 1. Thereby, during the plasma carburizing process, when plasma discharge is generated normally, light is emitted in purple based on H 2 gas, and when plasma discharge is not generated, light emission based on H 2 gas is not generated. On the other hand, the uppermost one of the plurality of workpieces 3 is to be monitored by the color camera 21, and the monitoring signal is to be input to the image analyzer 22. The image analysis device 22 performs image analysis after the start of the discharge, and determines that there is no light emission for a predetermined time or more, and determines that the discharge is abnormal. In the present embodiment, when it is determined that the discharge is abnormal, A stop signal is to be output from the image analysis device 22 to the high voltage and heating power supply 5. Therefore, in the present embodiment, it is possible to easily detect a carburization abnormality based on the presence or absence of purple light emission based on the H 2 gas. The abnormal carburizing detection system may be used together with the abnormal carburizing prevention system according to the embodiment.
【００１７】[0017]
【発明の効果】以上述べたように、第１の発明にあって
は、積重ねられた一部の被加工物間に、絶縁性を有する
異物が介在するとしても、浸炭異常が生じることを防止
できる。第２の発明にあっては、浸炭異常を容易に検出
できる。As described above, according to the first aspect of the present invention, the occurrence of abnormal carburization is prevented even when an insulating foreign substance is present between some of the stacked workpieces. it can. According to the second aspect, a carburizing abnormality can be easily detected.
【図１】実施例に係る工程を説明する説明図。FIG. 1 is an explanatory diagram illustrating a process according to an example.
【図２】プラズマ浸炭処理装置を概念的に示す図。FIG. 2 is a view conceptually showing a plasma carburizing apparatus.
【図３】プラズマ浸炭処理に先立つＣ3 Ｈ8 ガス供給の
作用について説明する説明図。FIG. 3 is an explanatory diagram for explaining the function of C 3 H 8 gas supply prior to plasma carburizing.
【図４】体積固有抵抗値の測定を説明する説明図。FIG. 4 is an explanatory diagram illustrating measurement of a volume specific resistance value.
【図５】各処理における体積固有抵抗値の測定の仕方を
説明する説明図。FIG. 5 is an explanatory diagram illustrating a method of measuring a volume specific resistance value in each process.
【図６】他の実施例に係る工程を説明する説明図。FIG. 6 is an explanatory view illustrating a process according to another embodiment.
【図７】他の実施例に係るプラズマ浸炭処理装置を概念
的に示す図。FIG. 7 is a view conceptually showing a plasma carburizing apparatus according to another embodiment.
１ 炉 ３ 被加工物 ８ Ｈ2 ガス供給源 １０ Ｃ3 Ｈ8 ガス １１ Ｃ3 Ｈ8 ガス供給源1 Furnace 3 Workpiece 8 H 2 gas supply source 10 C 3 H 8 gas 11 C 3 H 8 gas supply source
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小島 芳彦 広島県安芸郡府中町新地３番１号 マツ ダ株式会社内 (56)参考文献 特開 昭64−42564（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 8/38 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihiko Kojima 3-1 Shinchi, Fuchu-cho, Aki-gun, Hiroshima Mazda Co., Ltd. (56) References JP-A 64-42564 (JP, A) (58) Survey Field (Int.Cl. 7 , DB name) C23C 8/38
Claims (2)
ラズマ浸炭処理を行うプラズマ浸炭焼入方法において、プラズマ放電を発生させない状態の下で、 炭化水素系ガ
スを前記被加工物に対する通電被膜生成用ガスとして供
給して、所定の通電被膜形成時間を経過させた後に、前
記プラズマ浸炭処理を行う、 ことを特徴とするプラズマ浸炭焼入方法。In a plasma carburizing and quenching method for performing a plasma carburizing process on a plurality of stacked workpieces, a current is applied to the workpiece by applying a hydrocarbon-based gas to the workpieces without generating a plasma discharge. It is supplied as a generating gas, and after a predetermined energized coating film forming time has elapsed,
A plasma carburizing and quenching method characterized by performing the plasma carburizing treatment .
ラズマ浸炭処理を行うプラズマ浸炭焼入方法において、 前記プラズマ浸炭処理時に、水素ガスを供給して、発光
の有無を放電異常検出のために検出する、 ことを特徴とするプラズマ浸炭焼入方法。2. A plasma carburizing and quenching method for performing a plasma carburizing process on a plurality of stacked workpieces, wherein a hydrogen gas is supplied during the plasma carburizing process to detect the presence or absence of light emission to detect a discharge abnormality. A method for plasma carburizing and quenching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19305893A JP3278251B2 (en) | 1993-07-08 | 1993-07-08 | Plasma carburizing and quenching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19305893A JP3278251B2 (en) | 1993-07-08 | 1993-07-08 | Plasma carburizing and quenching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0726364A JPH0726364A (en) | 1995-01-27 |
| JP3278251B2 true JP3278251B2 (en) | 2002-04-30 |
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ID=16301498
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|---|---|---|---|
| JP19305893A Expired - Fee Related JP3278251B2 (en) | 1993-07-08 | 1993-07-08 | Plasma carburizing and quenching method |
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| JP (1) | JP3278251B2 (en) |
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|---|---|---|---|---|
| CN1908317B (en) | 2001-07-09 | 2012-04-25 | 亨利K·欧伯梅尔 | Water control valve and its actuator |
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1993
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| JPH0726364A (en) | 1995-01-27 |
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