JP3276608B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing technique, and more particularly to a method for measuring the positions of marks formed at a plurality of positions on an object to be exposed, and performing an alignment operation based on the measured data. For example, the present invention relates to a technique that is effective in a reduction projection exposure step in which a circuit pattern is superposed and exposed on a wafer by a step-and-repeat method in a semiconductor device manufacturing process.

[0002]

2. Description of the Related Art As a positioning method used in a step-and-repeat type reduction projection exposure apparatus, for example, there is a method described in Japanese Patent Application Laid-Open No. 61-44429.

That is, in this alignment method, a plurality of chip patterns regularly aligned on a substrate to be processed along a design arrangement coordinate are sequentially positioned with respect to a predetermined reference position by a step-and-repeat method. The method for combining includes the following steps.

Prior to the step-and-repeat type alignment, the substrate to be processed is moved based on the designed array coordinate values of the chip patterns to align some of the plurality of chip patterns with the reference position. Step of actually measuring each position when, the array coordinate values on the design,
When the actual array coordinate values to be aligned by the step-and-repeat method are in a unique relationship including a predetermined error parameter, the actual array coordinate values of the plurality of measured values and the actual array coordinate values are Determining the error parameter so that an average deviation is minimized, calculating the actual array coordinate value based on the determined error parameter and the designed array coordinate value, and performing step-and-repeat. A step of positioning the substrate to be processed according to the calculated actual array coordinate values at the time of alignment in the method.

[0005]

In such an alignment method, one set of x, y or two sets of reference marks are inserted in each exposure shot of the step-and-repeat method. Are used to measure the position error and the amount of deformation of the wafer, and alignment is performed with respect to the reference mark for each shot, and exposure is performed. At this time, if the amount of deformation of the wafer is 10 ppm, the
In the span, a deviation of about 0.15 μm remains.

However, in the conventional alignment method, this error is not corrected. Conventionally, this error has not been corrected for the following reasons.

1) Since the size of the shot is as small as 15 mm, the deformation of the wafer can be ignored. 2) To correct errors in a shot, it is necessary to perform position measurement on multiple points in the shot, but this not only reduces the throughput but also complicates the device with multiple optical systems and increases the cost. Is invited.

However, at present, as integration and ultra-miniaturization have progressed, the margin for alignment has become smaller, and the influence of errors due to wafer deformation and the like has become relatively large. The situation is not possible.

It is an object of the present invention to provide a method of manufacturing a semiconductor device capable of correcting an error in a shot without performing position measurement on a plurality of points in the shot.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

The outline of a typical invention among the inventions disclosed in the present application is as follows.

That is, the method of manufacturing a semiconductor device has a small area.
Are formed on a wafer and a plurality of
Alignment mask provided in the small area
Marks and reference positions corresponding to these alignment marks.
Obtaining the positional relationship of
From the expansion and contraction error between the small areas separated from each other.
Approximation of the expansion / contraction error of the small area of
Setting and exposing a plurality of the small areas,
The expansion / contraction error between the small areas separated from each other is caused by
And averaged the expansion and contraction error in the Y direction.
And features.

The positional deviation error in the small area of the wafer is caused by the deformation and positional deviation of the whole wafer. Therefore,
In the above-described means, a composite error of the entire wafer is obtained based on the position measurement of the alignment mark formed on the wafer, and an expansion / contraction error of the wafer is obtained from the result. Then, the magnification error of the entire wafer is averaged to obtain a magnification error, and magnification correction of a small area is executed. That is, according to the above-described means, it is possible to correct the error in the small area without measuring the positions of a plurality of points in the small area. In other words, it is possible to secure the alignment for each small area without reducing the throughput of the exposure apparatus.

[0014]

FIG. 1 shows an embodiment of the present invention.
FIG. 2 is a flowchart showing an alignment method applied to a reduction projection exposure step of a semiconductor device manufacturing method . FIG. 2 is a perspective view showing a reduction projection exposure apparatus used in a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 3 is a schematic plan view of a wafer showing a coordinate system of a shot in wafer alignment, FIG. 4 is a schematic view showing an offset of a shot which is one of the error factors of the wafer, and FIG. FIG. 6 is a schematic diagram showing the rotation of the shot on the X axis, FIG. 7 is a schematic diagram showing the rotation of the shot on the Y axis, FIG. 8 is a schematic diagram showing the rotation error of the shot, and FIG. FIG. 10 is a schematic diagram showing a magnification error of a shot, FIG. 10 is a schematic diagram showing an orthogonality error of a shot, and FIGS. 11, 12 and 13 are schematic diagrams for explaining the operation.

In the present embodiment, the semiconductor according to the present invention
The exposure apparatus used in the apparatus manufacturing method is configured as a step-and-repeat type reduction projection exposure apparatus (stepper). Hereinafter, the reduction projection exposure apparatus will be described with reference to FIG.

In FIG. 2, an original image of a semiconductor element pattern is drawn on a reticle 6, and this image is projected onto a wafer 1 as an object to be exposed via a reduction projection lens 7 and exposed. The lens 7 is configured so that the wafer side becomes a telecentric system. The wafer 1 is automatically conveyed from the cassette 8 onto the loading table 9, is roughly positioned by the pre-alignment device 10, and is then moved by the transfer arm 11 to the chuck 13 on the XY stage 12.
Is adsorbed in vacuum.

On the other hand, the reticle 6 is aligned by the reticle alignment optical system 20 so that the center of the reticle 6 coincides with the center of the reduction projection lens 7. In the case of the reduction projection exposure apparatus according to the present embodiment, a through-the-lens type position detection X system 21 and a position detection Y system 22 are provided for positioning the reticle 6 and the wafer 1.
This detection system irradiates the alignment mark formed on the wafer 1 with light having a wavelength at which the resist is not exposed, scans the specular reflection image from this mark with a photomultiplier by scanning a slit, and uses a reticle. It is configured to detect six window patterns. Further, the position of the wafer 1 is measured by the laser interferometer 30.
Then, the deviation of the wafer pattern from the design lattice position is determined from these measurement data.

A laser beam 31 emitted from a laser interferometer 30 is split by a spectroscope 32. One laser beam 31 is applied to an X-axis mirror 33 attached to the XY stage 12. This irradiation light is applied to the X-axis mirror 3
The light is reflected by 3 and returns to the laser interferometer 30 to detect the X coordinate of the XY stage 12. The other laser beam 31 is applied to a Y-axis mirror 36 mounted on the XY stage 12 via mirrors 34 and 35, respectively. The laser light 31 irradiated and reflected on the Y-axis mirror 36 is reflected by the mirrors 34 and 35 and the spectroscope 3.
2 to the laser interferometer 30 and the Y coordinate of the XY stage 12 is detected. The XY stage 12 is controlled to move in the X-axis direction with high precision by an X-axis motor 37, and the Y-axis motor 3
8, so that the movement is controlled with high precision in the Y-axis direction.

On the other hand, the wafer 1 on the chuck 13 whose operation has been completed is transferred onto the unloading table 40 by the transfer arm 11. The wafers 1 transferred onto the unloading table 40 are sequentially stored in the collection cassette 41 by, for example, an air bearing mechanism configured on the unloading table 40.

Next, a semiconductor device according to an embodiment of the present invention will be described.
The alignment method in the reduction projection exposure step of the device manufacturing method will be described.

This alignment method is performed for the second and subsequent layers of the wafer 1 as an object to be exposed. The wafer 1 has a circuit pattern and alignment marks already formed thereon. I have.

The wafer 1 on which the pattern and the alignment mark are already formed is subjected to rough alignment in the XY directions and the rotation direction by using the alignment marks at two points in the wafer 1 by the pre-alignment apparatus 10. Is done. In this case, in the case of this exposure apparatus, since there is no rotation mechanism on the XY stage 12, the exposure apparatus is positioned on the pre-alignment apparatus 10 so that a rotation error is minimized.

The wafer 1 transported and adsorbed on the chuck 13
In addition, global alignment is performed using two shots 2 in the wafer 1. In the shot 2, an X mark Ax and a Y mark Ay are all arranged.

For example, as shown in FIG. 3, first, the shot 2 in the wafer 1 is moved and positioned below the reduction projection lens 7 by the XY stage 12. With this movement, an error amount with respect to the design value (design shot) in the Y direction is obtained based on the data of the position detection Y system 22, and the error amount in the X direction is obtained based on the data of the position detection X system 21. Is obtained. Next, in the same manner, X is applied to shot 2 of wafer B as well.
The position of Y is moved, and an error with respect to a design value (design shot) is obtained.

From the above results, the rotation of the wafer 1, the offset (off) in the XY directions, and the rotation of the wafer 1 in the XY directions
Is calculated, and an exposure grid (shot) is determined.

In the case of conventional exposure using global alignment, the XY stage 12 moves the wafer 1 in a step-and-repeat manner and positions it appropriately on the basis of this exposure grid. Each time, a reticle image is transferred to the wafer 1. ing.

At present, where higher precision is required, after the global alignment, the X mark Ax and the Y mark Ay are further detected for each shot, and the error in the detected coordinates is minimized. The XY stage 12 is precisely controlled, or, as shown in FIG. 2, X and Y residual error correction is performed by a reticle fine movement mechanism 42 that supports the reticle 6, and thereafter, shot exposure is performed.

In the case of such "in-situ exposure" chip alignment, as shown in FIGS. 11 (a), 12 (a) and 13 (a), errors in the expansion and contraction of the wafer, etc. Of these, the error between shots is corrected, so that the positioning as shown in FIG. 11B, FIG. 12B and FIG. 13B is respectively performed.

However, as shown in FIGS. 11 (b), 12 (b) and 13 (b), errors remain in the shot. Then, FIG. 11 (c), FIG. 12 (c)
In order to execute high-accuracy positioning as shown in FIG. 13C, it is necessary to correct this error.

As a means for performing the high-precision positioning, two points in the same shot, for example, (Ax ₁ , Ay ₁ ) and (Ax ₂ , Ay ₂ ) in FIG.
There is a means for performing position measurement by using the position alignment mark and correcting an error in the shot based on the measurement data.

However, in this case, since a plurality of position detection systems are required, the apparatus cost increases. And two at the same time
Since it is a point measurement, it is impossible to remove erroneous detection from the linearity, and correction in a shot is performed in a state where the erroneous detection is still included. As a result, the reliability of the alignment is reduced. In addition, when a plurality of measurements in a shot are performed by one detection system, the number of measurement points in the shot increases, thereby lowering the throughput.

In view of such circumstances, the alignment method according to the present embodiment does not execute the alignment for a plurality of points in the shot, but obtains the error in the shot from the measurement result of the positional shift of the wafer and the amount of deformation. Is corrected.

That is, based on the data obtained by measuring the positions of two points in the wafer, the amount of expansion / contraction Py of the wafer and the amount of rotation Θy of the wafer are obtained by the following equations.

Py = (ΔY ₁ −ΔY ₂ ) / D (1) Θy = (ΔX ₁ −ΔX ₂ ) / D (2)

In brief, the result is used as a correction amount of expansion / contraction in the shot and a correction amount of rotation of the shot, and is obtained by a rotation system of a magnification correction mechanism and a reticle fine movement mechanism described later.
Correction can be performed.

Further, as means for correcting with high accuracy,
There are the following methods. In the present embodiment, the positions of a plurality of marks arranged on a wafer as an alignment target based on design data are measured by chip alignment. The composite errors ΔX and ΔY represented by the difference between the measured result and the design data are represented by the following error factors.

ΔX = X _off + P _x + Θ _y + S θ + S _M + S _D + S _O + ε (3) ΔY = Y _off + P _y + Θ _x + Sθ + S _M + S _D + S _O + ε (4)

Here, as shown in FIG. 4, X _off and Y _off are offsets of the shot 2 with respect to the design shot 43 in the XY axis direction. P _x and P _y are shown in FIG.
As shown in FIG. 3, the expansion / contraction error of the shot 2 in the XY axis direction with respect to the shot 43 in design. Θ _x , Θ
_y is a rotation error of the shot 2 in the XY axis direction with respect to the shot 43 in design, as shown in FIGS. 6 and 7. Sθ is a rotational error of shot 2 with respect to shot 43 in design, as shown in FIG. _SM
Is the magnification error of shot 2 with respect to shot 43 in design, as shown in FIG. _SD is the non-linear distortion error in the shot. ε is a non-linear position error generated at the time of step and repeat. So, FIG.
, The orthogonality error of the shot with respect to the shot 43 in design.

Among these error factors, the components other than the non-linear distortion error S _D in the shot and the non-linear position error ε are the same as the linear errors of the wafer, which were previously measured by chip alignment. Based on this, it can be calculated by a statistical method. Using this method, the above S _D , ε is obtained from the coordinate data obtained by the chip alignment in the wafer.
Each error factor excluding is represented as a linear expression by averaging processing and regression calculation.

Hereinafter, the equations for obtaining each error will be sequentially described. In the case of the present embodiment, the X mark in the shot,
Only the detection of the Y mark is performed. As shown in FIG. 3, the position measurement error of an arbitrary shot is ΔX _i .
_j , ΔY _i . It is represented by _j .

The offsets X _off and Y _off are calculated by the following equations for calculating the average of all the measured data.

[0042]

(Equation 1)

At this time, the expansion / contraction Px, Py of each axis and the rotation Θx, Θy of each axis are calculated before calculating the offset. That is, after the expansion and contraction of the wafer and the rotation of the axis are calculated, the offset is calculated.

Expansion and contraction of each axis Px, Py, rotation of each axis
x and Θy are obtained by regression calculation using av.Xi averaged for each column and av.Yj averaged for each row in the following equation.

[0045]

(Equation 2)

[0046]

(Equation 3)

From the above results, the coordinates X _EX and Y _EX of the shot center to be exposed on the wafer are expressed by the following equations with the origin of the wafer center.

X _EX = X _off + Px · Lx + Θy · Ly (15) Y _EX = Y _off + Py · Ly + Θx · Lx (16)

Here, Lx and Ly indicate the distances of the X and Y components of each shot center from the wafer center. Also,
The magnification error S _M and the rotation error Sθ within a shot are represented by the following equations.

S _M = (Px + Py) / 2 (17) Sθ = (Θx + Θy) / 2 (18)

Next, a specific method for correcting the magnification error S _M in the shot and the rotation error Sθ in the shot will be described.

First, a method of correcting the shot magnification error S _M will be described.

In the reduction projection exposure apparatus according to this embodiment, since the reduction projection lens 7 is configured so that the wafer side is telecentric, the wafer 1
, The shot magnification hardly changes. On the other hand, since the reticle side is not configured to be telecentric, when the reticle 6 is moved in the optical axis direction, the magnification changes. Therefore, using this principle, the correction of the shot magnification error S _M is executed. That is, when the reticle 6 is moved up and down by the fine movement mechanism 42, the magnification error is corrected.

However, the magnification error correction method is based on this method.
It is not limited. For example, the reticle side
In the case of an optical system configured in a simple
Can be corrected by moving a part of
You. In addition, the pressure in the lens or bending in the middle of the optical system
Magnification error also depending on the method of encapsulating gases with different bending rates
S _M Can be corrected.

Next, a method of correcting the rotation error Sθ in a shot will be described.

The rotation error Sθ is determined by the reticle fine movement mechanism 4
2 can be corrected using the rotation system 2 and the reticle alignment optical system 20. That is, the shot rotation angle is directly corrected as the reticle rotation angle.

When the reticle is not rotated, that is, when the rotation system of the reticle fine movement mechanism 42 is not provided, the correction can be performed by using the rotation movement mechanism of the wafer.

By the above calculations, the offset error (X _off , Y _off ) and the expansion / contraction error (Px,
Py), the rotation error (Θx, Δy), the magnification error (S _M ) in the shot, and the rotation error (Sθ) are obtained, and then the actual alignment of the step-and-repeat method involving exposure for each shot is performed. Be executed. At this time, the error obtained as described above is based on the X-axis motor 37, the Y-axis motor 38, the reticle fine movement mechanism 4 according to the command of the central processing unit.
2 and the rotation of the reticle fine movement mechanism is automatically corrected.

Here, since the magnification error (S _M ) and the rotation error (Sθ) in a shot are determined as a single value for one wafer, each shot is simultaneously performed with the first alignment. Is substantially executed.

According to the above embodiment, the following effects can be obtained.

1) A linear error of about 10 ppm may occur in the amount of deformation of the wafer depending on the process or process, and this error is about 0.15 μm / 15 mm in a shot.
It is. Most of this error is corrected by the positioning method according to the present embodiment, and highly accurate positioning can be performed.

2) In addition, by not performing measurement in a shot, a decrease in throughput can be prevented, and a correction operation does not have to be performed for each shot, thereby further preventing a decrease in throughput. Can be.

3) Usually, as an error in reticle manufacturing,
There is an error in the shot, and a change in magnification at the time of transfer due to the heat storage effect of the optical system due to wafer exposure can be considered. Since the positioning can be performed so as to minimize such a displacement error other than the wafer deformation, it is possible to further improve the accuracy.

4) Further, in order to improve the accuracy,
For each shot, it is necessary to perform measurement within the shot and perform alignment within the shot. At this time,
In order to prevent a decrease in throughput, erroneous detection can be eliminated with a small number of measurement points, so that highly accurate alignment can be realized.

Although the invention made by the present inventor has been specifically described based on the embodiment, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the invention. Needless to say.

In the above embodiment, (17), (1)
As shown in equation (8), the average of the amounts of deformation of X and Y is taken. However, by using only the measurement result of one axis X or Y, it is possible to reduce the magnification error S _M and the rotation error Sθ. Correction can be performed.

Although the position and the deformation of the wafer are calculated by the averaging process and the linear regression calculation, the position and the deformation of the wafer are calculated by using other statistical processing calculations such as the least square method. Is not limited to the above formula.

Further, it is included in the non-linear error within the shot.
Wafer orthogonality deformation error (see FIG. 13A)
The orthogonality error in the shot_o Then this orthogonality
Error S _o Is represented by the following equation.

S _o = (Θ _x −Θ _y ) (19) At the same time, by setting S _o = Θ _x or Θ _y (20), the rotation error component of the equation (20) and (1)
Since it can be separated into the orthogonality deformation component of Expression 9), highly accurate alignment can be performed.

The correction of the rotation error component is as follows.
This can be executed by the above-described correction method for the rotation error Sθ.

[0071] The correction of the quadrature deformation component in the case of a projection optical system lens is used, performed using the same principle as the correction of magnification error S _M by the optical axis direction movement of the reticle described above can do. That is, the diagonal position is finely moved in the optical axis direction with respect to the center of the reticle by the upper and lower fine movement mechanisms independent of the four corners of the reticle.
Correction can be performed by elastically deforming the reticle. At this time, a residual error occurs in the magnification and the rotation direction.

In the above embodiment, the XY table holding the wafer is used as a reference, and errors such as scale and rotation are corrected with respect to this reference.

In addition to adjusting linear errors such as scale and orthogonality for using the XY stage as an absolute reference, it is important to adjust in advance non-linear errors including yawing and pitching to the minimum.

Prior to wafer measurement, pattern position errors (R _M , R
θ, R _O ) and transfer position errors (L _M , Lθ, L _O ) generated at the time of transfer are measured or estimated, and the positioning error between the pattern transferred on the wafer and the reference pattern on the wafer is measured. S _M ′, S
By correcting θ ′ and S _O ′, it is possible to further improve the accuracy.

[0075] _{S M '= S M + R} M + L M ... (21) Sθ' = Sθ + Rθ + Lθ ... (22) S o '= S o + R O + L O ... (23)

Further, a method for measuring the position of a plurality of points for each shot and correcting the shot position and the intra-shot error is as follows.
Although it takes time, since false detection can be prevented,
Higher accuracy can be expected.

Therefore, the correction amounts S _M ', Sθ',
'A constant value added to _{the, TS M' S O, TSθ} ', TS O'
And

TS _M '= S _M ' ± T _M (24) TS θ '= S θ' ± T θ (25) TS _O '= S _O ' ± T _O (26)

S _M , S θ, S _O obtained by in-shot measurement with reference to the TS _M ′, TS θ ′, and TS _O ′.
Is within this range, the in-shot measurement result is used to execute positioning. Conversely, if the value exceeds this range, it is determined that erroneous detection has occurred, and S _M ′, Sθ ′, S
_O ′ is used to perform in-shot correction.

In the above embodiment, it has been described that the error in the shot is corrected in all cases. However, the deformation and the position error of the wafer are very small, and the correction accuracy is lower than the correction accuracy in the shot. For products and processes that are not required, it is effective to selectively perform correction.

In the above description, the case where the invention made by the present inventor is mainly applied to an exposure step using a stepper in a method of manufacturing a semiconductor device , which is a background of application, has been described. , But is not limited thereto.

For example, step-and-repeat X
The present invention can be applied to a line stepper, a 1: 1 projection stepper, and the like.

The present invention can be applied to an exposure technique in which exposure is repeatedly performed on at least the object to be exposed and work is performed for each small area of the object to be exposed.

[0084]

The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.

In an exposure method for an object to be exposed, position measurement is performed for some of the alignment marks before actual alignment, and a composite error of the entire object to be exposed is determined based on the measured values. Based on the error, the expansion / contraction error, rotation error, and offset error of the entire object to be exposed are obtained. Based on these errors, the magnification error and rotation error in a small area set corresponding to the shot are obtained, and the actual alignment is performed. By correcting these errors,
Since it is not necessary to perform position measurement in the small area, high-accuracy positioning can be achieved even in the small area without lowering the throughput.

[Brief description of the drawings]

FIG. 1 shows a method for manufacturing a semiconductor device according to an embodiment of the present invention.
Is a flow diagram illustrating a registration method applied to a reduction projection exposure process of law.

FIG. 2 shows a method for manufacturing a semiconductor device according to an embodiment of the present invention.
1 is a perspective view showing a reduction projection exposure apparatus used in a method .

FIG. 3 is a schematic plan view of a wafer showing a coordinate system of shots in wafer alignment.

FIG. 4 is a schematic diagram showing a shot offset which is one of error factors of a wafer.

FIG. 5 is a schematic diagram showing a shot expansion / contraction error.

FIG. 6 is a schematic view showing the rotation of the shot on the X axis.

FIG. 7 is a schematic diagram showing rotation of a shot about a Y-axis.

FIG. 8 is a schematic diagram showing a rotation error of a shot.

FIG. 9 is a schematic diagram showing a magnification error of a shot.

FIG. 10 is a schematic view showing a shot orthogonality error;

FIG. 11 is a schematic diagram for explaining an operation.

FIG. 12 is a schematic diagram for explaining an operation.

FIG. 13 is a schematic diagram for explaining an operation.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Shot, 3 ... Chip, 5 ... Incomplete shot, 6 ... Reticle, 7 ... Reduction projection lens, 8 ... Cassette, 9 ... Loading table, 10 ... Pre-alignment device, 11 ... Transfer arm, 12 ... XY stage, 1
3 chuck, 20 reticle alignment optical system, 2
DESCRIPTION OF SYMBOLS 1 ... X system for position detection, 22 ... Y system for position detection, 30 ... Laser interferometer, 31 ... Laser beam, 32 ... Spectroscope, 33 ... X
Mirrors for axes, 34, 35 Mirror, 36 Mirror for Y axis, 37 Motor for X axis, 38 Motor for Y axis, 40
Unloading table, 41 ... cassette for collection, 4
2: Reticle fine movement mechanism, 43: Design shot.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-59-54225 (JP, A) JP-A-61-44429 (JP, A) JP-A-60-138926 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/23 G03F 9/00

Claims (2)

(57) [Claims] 1. A wafer having a plurality of small regions formed thereon.
In the small area separated from each other via the small area.
The alignment marks and the alignment marks
Determining a positional relationship with a reference position corresponding to the distance; and obtaining the mutually separated sub-regions obtained from the positional relationship.
Approximate the expansion and contraction error of each small area from the expansion and contraction error between regions,
Based on that, the exposure magnification is set to
Exposure step, wherein the expansion / contraction error between the small areas separated from each other is
And averaged the expansion and contraction error in the Y direction.
And a method of manufacturing a semiconductor device. 2. A wafer having a plurality of small regions formed thereon.
In the small area separated from each other via the small area.
The alignment marks and the alignment marks
A step of obtaining a positional relationship between the reference position corresponding to the obtained from the positional relationship, a small territory said spaced apart from each other
Approximate the expansion and contraction error of each small area from the expansion and contraction error between regions,
In addition, patterns for reticles in reticle manufacturing
Position error and transfer position error that occurs during transfer.
Setting the exposure magnification based on the
Exposing a region, and a method for manufacturing a semiconductor device.