JP3264096B2 - Horizontal vapor phase growth apparatus and horizontal heat treatment apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a horizontal vapor phase growth apparatus and
And horizontal heat treatment apparatus , for example , horizontal MOCVD
It is suitable for use in (organic metal chemical vapor deposition) apparatuses.

[0002]

2. Description of the Related Art There are various types of MOCVD apparatuses. Among them, a horizontal MOCVD apparatus is used for producing a high-quality compound semiconductor device by, for example, being able to flow a gas source at a high flow rate in a horizontal reaction tube. Are suitable.

FIG. 18 shows an example of a horizontal MOCVD apparatus, which is of a laboratory scale. The horizontal M shown in FIG.
In the OCVD apparatus, only the susceptor 101 has a reaction tube 1
The substrate 104 is moved from 02 to the substrate exchange chamber 103 to exchange the substrate 104. Here, when the susceptor 101 is moved from the reaction tube 102 to the substrate exchange chamber 103, the gate valve 105
Open. In FIG. 18, reference numeral 106 denotes a high-frequency heating coil, and 107 denotes a thermocouple.

[0004]

In order to use the above-mentioned horizontal MOCVD apparatus shown in FIG. 18 for production, it is necessary to increase the size of the apparatus. Required. That is, when replacing the substrate 104, the surface of the substrate 104 may be contaminated because the substrate 104 passes downstream in the reaction tube 102 where a large amount of precipitates exist.

Accordingly, an object of the present invention is to provide a horizontal vapor phase growth apparatus such as a horizontal MOCVD apparatus capable of preventing the surface of a substrate from being contaminated when the substrate is replaced.

[0006]

In order to achieve the above object, the present invention provides a horizontal reaction tube (21) and a substrate (S).
Susceptor (23) for mounting a susceptor and susceptor (23)
In horizontal vapor phase growth apparatus having a heating means (29) for heating the, it is detachably attached to the susceptor (23) into the reaction tube (21) of the tube wall provided with an opening (21a), a susceptor ( 23) is for the fixed part and this fixed part
Rotating part (24, 25),
4, 25) on which the substrate (S) is mounted .

In the present invention, the susceptor (23)
When fitted into the opening (21a), it forms part of the tube wall of the reaction tube (21). The susceptor (23) is configured to be movable in a direction perpendicular to the reaction tube (21). The heating means (29) is provided integrally with the susceptor (23) at a portion opposite to the reaction tube (21) with respect to the susceptor (23). Here, as the heating means (29),
For example, a resistance heating source with high thermal efficiency and low power consumption is preferably used.

[0008] In one embodiment of the present invention, the susceptor (23) and the heating means (29) include a reaction tube (21).
Mounted on a platform (33) movable in a direction perpendicular to the table. These susceptors (23) and heating means (2
9) is attached to the base (33) via a support spring (32). As the support spring (32), one having a degree of freedom in only one direction is suitably used, and specifically, for example, a leaf spring is used.

In one embodiment of the present invention, the susceptor (23) comprises a fixed portion and rotating portions (24, 25) rotating with respect to the fixed portion, and the substrate (S) is mounted on the rotating portions (24, 25). Is placed. Here, the rotating parts (24, 2
5) consists of a first gear, the first gear being rotatable by a second gear (26). The rotational force of the motor (27) is transmitted to the second gear (26) via a wire (28) connected to a shaft (27a) of the motor (27).

[0010] In a typical embodiment of the present invention, there is further provided a substrate exchange chamber (22) for exchanging the substrate (S) on the susceptor (23). In this case, the susceptor (23) and the heating means (29) are mounted on a table (33) movable in a direction perpendicular to the reaction tube (21), and when exchanging the substrate (S), the reaction tube (21) is changed. The susceptor (23) and the heating means (2) are moved into the substrate exchange chamber (22) by moving the table (33) in a direction perpendicular to
9).

An actuator (3) movable along a rotation axis (35) provided in the substrate exchange chamber (22).
4) is attached to the table (33). Here, the actuator (34) is a linear actuator configured to generate a driving force in the axial direction of the rotating shaft (35) by a frictional force between the bearing (BB) and the rotating shaft (35).

Further, a movable arm for exchanging the substrate (S) is provided in the substrate exchange chamber (22). This arm comprises a first arm (40) and a second arm (41) attached to the tip thereof and having holes (41a, 41b) for sucking the substrate (S) by vacuum. The arm (41) is configured to be rotatable around one end on the distal end side of the first arm (40) and rotatable around its central axis. The invention also provides a horizontal
A reaction tube, a susceptor for mounting the substrate, and a susceptor
A horizontal vapor phase growth apparatus having a heating means for heating
Attach a susceptor to the opening provided in the tube wall of the reaction tube.
It is configured to be removable, and the heating means is connected to the reaction tube with respect to the susceptor.
Is provided integrally with the susceptor on the side opposite to
Heater and heating means can be moved in a direction perpendicular to the reaction tube
That it is attached to a
It is a sign. The present invention also provides a horizontal reaction tube.
And a susceptor for mounting the substrate, and heating the susceptor.
Vapor deposition apparatus having heating means for heating
Te, Removable susceptor in an opening provided in the tube wall of the reaction tube
The susceptor is fixed to the fixed part and this fixed part.
The substrate is placed on the rotating part.
The rotating part comprises a first gear, and the first gear is a second gear.
It is configured to be rotatable by gears and connected to the motor shaft.
The torque of the motor is transmitted to the second gear via the wire
It is characterized in that it is configured to
You. The present invention also provides a horizontal reaction tube and a substrate.
For heating the susceptor and a heating means for heating the susceptor
And a substrate exchange chamber for exchanging substrates on the susceptor.
Provided on the tube wall of a reaction tube in a horizontal type vapor phase growth apparatus having
Is detachably attached to the susceptor was opened, the susceptor
And heating means can be moved perpendicular to the reaction tube
To the reaction tube when exchanging substrates.
And move the table in the vertical direction to move the board
Configured to introduce a susceptor and heating means to the
Place the table in a direction perpendicular to the reaction tube in the substrate exchange chamber.
Uses an unlubricated linear actuator as a moving means
It is characterized in that had. The invention also provides
Mold-type reaction tube, susceptor for mounting substrate, and susceptor
The heating means for heating the heater and the substrate on the susceptor.
To a horizontal type vapor phase growth apparatus having a substrate exchange chamber for exchanging
Attach a susceptor to the opening provided in the tube wall of the reaction tube.
The susceptor and the heating means are attached to the reaction tube.
Mounted on a table that can be moved in a direction perpendicular to the
Move table in direction perpendicular to reaction tube when replacing
The susceptor and the heating means in the substrate exchange chamber.
And installed in the substrate exchange chamber.
An actuator that can move along the rotation axis is attached to the table
The actuator moves between the bearing and the axis of rotation.
It is structured so that the frictional force generates the driving force in the axial direction of the rotating shaft.
It is characterized by having been done . This invention
In addition, a horizontal reaction tube and a susceptor for mounting the substrate
Heating means for heating the susceptor; and on the susceptor
Horizontal gas phase having a substrate exchange chamber for exchanging substrates
In the growth equipment, the opening provided in the tube wall of the reaction tube
A susceptor and a heating means
Is mounted on a table that can be moved in a direction perpendicular to the reaction tube.
When replacing the substrate, the direction perpendicular to the reaction tube
The susceptor and the susceptor
And a heating means are introduced into the substrate exchange chamber.
Is provided with a movable arm for exchanging substrates.
The arm is attached to the first arm and its tip, and
From the second arm with a hole for vacuum suction of the substrate
The second arm has one end on the distal end side of the first arm.
Rotatable as a center and rotatable around its central axis
That it is configured in which the features. The invention
In addition, a horizontal reaction tube and a susceptor
Heating means for heating the susceptor; and on the susceptor
Horizontal gas phase having a substrate exchange chamber for exchanging substrates
In the growth equipment, the opening provided in the tube wall of the reaction tube
A susceptor and a heating means
Is mounted on a table that can be moved in a direction perpendicular to the reaction tube.
When replacing the substrate, the direction perpendicular to the reaction tube
The susceptor and the susceptor
And a susceptor at the opening.
At least the susceptor and
A space partitioned by the partition wall including the base is formed.
And the inside of the reaction tube communicates with
Things. The present invention further provides a horizontal processing tube,
Susceptor for placing the board and for heating the susceptor
In horizontal heat treatment apparatus having a heating means, the processing tube
The susceptor is configured to be detachable from the opening provided in the
The susceptor rotates with respect to the fixed part.
That the substrate is placed on the rotating part.
It is a feature. The invention further provides for horizontal processing.
Heating tube, susceptor for mounting substrate, and susceptor
Horizontal heat treatment apparatus having a heating means for heating
Te, Removable susceptor in an opening provided in the tube wall of the process tube
The heating means is opposite to the processing tube with respect to the susceptor.
The susceptor is provided integrally with the susceptor on the opposite side .
And heating means can move in the direction perpendicular to the processing tube
It is characterized by being attached to the base via a support spring
Is what you do. The invention further comprises a horizontal processing tube;
A susceptor for mounting the substrate and a heater for heating the susceptor
In horizontal heat treatment apparatus and a fit of the heating means, treatment
A susceptor can be attached to and detached from the opening provided in the pipe wall.
And the susceptor rotates with respect to the fixed part
It consists rotating unit that, the substrate is placed on a rotating portion, the rotation
The part comprises a first gear, and the first gear comprises a second gear.
Ri rotatably constructed, connected to the shaft of the motor wire
Through which the torque of the motor is transmitted to the second gear
It is characterized by being constituted . This departure
Akira also added a horizontal processing tube and a support for loading substrates.
Susceptor, heating means for heating the susceptor, and susceptor.
Horizontal type having a substrate exchange chamber for exchanging substrates on a substrate
In the heat treatment equipment, the opening provided in the pipe wall of the processing pipe
The susceptor is configured to be detachable, and the susceptor and the heating
The stage is mounted on a table that can be moved in a direction perpendicular to the processing tube
When the substrate is changed,
The susceptor and the susceptor
And a heating means are introduced in the substrate exchange chamber.
For moving the table in a direction perpendicular to the processing tube at
Japanese for using unlubricated linear actuator as
It is a sign. The present invention further provides a horizontal processing tube.
And a susceptor for mounting the substrate, and heating the susceptor.
Heating means for replacing the substrate on the susceptor
Processing in a horizontal heat treatment apparatus having a substrate exchange chamber
A susceptor can be attached to and detached from the opening provided in the pipe wall.
And the susceptor and the heating means are perpendicular to the processing tube.
Mounted on a table that can move in the direction
By moving the table in a direction perpendicular to the
The susceptor and heating means
Configured urchin, along the axis of rotation provided on the substrate exchange chamber
The movable actuator is attached to the base,
Due to the friction between the bearing and the rotating shaft
It is configured to generate a driving force in the axial direction of the rotating shaft
It is characterized by the following. The invention further provides a horizontal
Processing tube, a susceptor for mounting a substrate, and a susceptor
Replace the substrate on the susceptor with heating means for heating the
In a horizontal heat treatment apparatus having a substrate exchange chamber for performing
Te, Removable susceptor in an opening provided in the tube wall of the process tube
Configured ability susceptor and heating means to process pipe
Mounted on a platform that can be moved vertically
Move the table in the direction perpendicular to the processing tube when changing
Guides the susceptor and heating means into the substrate exchange chamber.
Into the substrate exchange chamber.
Arm is provided for the first arm.
Attached to the system and its tip and vacuum-adsorbs the substrate
A second arm having a hole for
The arm can rotate around one end on the tip side of the first arm
And is configured to be rotatable around its central axis
It is characterized by the following. The invention further provides a horizontal
Processing tube, a susceptor for mounting a substrate, and a susceptor
Replace the substrate on the susceptor with heating means for heating the
In a horizontal heat treatment apparatus having a substrate exchange chamber for performing
Te, Removable susceptor in an opening provided in the tube wall of the process tube
Configured ability susceptor and heating means to process pipe
Mounted on a platform that can be moved vertically
Move the table in the direction perpendicular to the processing tube when changing
Guides the susceptor and heating means into the substrate exchange chamber.
With the susceptor fitted into the opening
When at least a partition containing the susceptor and platform
A space separated by walls is formed, and this space and the processing pipe
Is connected to the inside .

[0013] In the present invention, the horizontal vapor phase epitaxy apparatus comprises:
Typically, a horizontal MOCVD apparatus is used.
It may be a VD device.

[0014]

According to the horizontal vapor phase epitaxy apparatus of the present invention constructed as described above, the susceptor (23) is connected to the reaction tube (2).
Since the susceptor (23) can be easily attached to and detached from the opening (21a) of the reaction tube (21) by moving in a direction perpendicular to 1), the reaction tube (21) in which a large amount of precipitates exists The substrate can be exchanged without passing the substrate (S) downstream in the parentheses. Therefore, it is possible to prevent the surface of the substrate from being contaminated when replacing the substrate.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing one embodiment of the present invention,
The configuration of a general MOCVD apparatus will be described.

As shown in FIG. 15, the MOCVD apparatus generally has a gas supply system 1, a reaction vessel (reaction tube) 2, a pressure reduction system 3, a harm removal system 4, a substrate exchange system 5, and a substrate storage room 6. The gas supply system 1 is controlled by a gas supply controller 7. A susceptor that can be heated by a heater is provided in the reaction vessel 2, and a substrate is placed on the susceptor. The heating of the susceptor by the heater is controlled by the heating controller 8. The pressure reduction system 3 is controlled by a pressure reduction controller 9. These gas supply controller 7, heating controller 8 and pressure reducing controller 9
Is controlled by the crystal growth sequence controller 10. On the other hand, the board exchange system 5 is
1 is controlled.

The gas supply system 1 is for supplying a predetermined amount of a gas source used for crystal growth to the reaction vessel 2, and is configured, for example, as shown in FIG. The gas supply system 1 has a plurality of material supply channels, and each material supply channel has a flow controller and a valve (usually air-driven).
Is attached. That is, in FIG.
A liquid material is put in the bubbler 12, and a highly purified hydrogen gas is supplied as a carrier gas into the bubbler 12 by a hydrogen purifier (not shown). Raw materials are supplied to the reaction vessel 2. The flow rate of the hydrogen gas supplied into the bubbler 12 is controlled by a flow rate controller 13. On the other hand, the gas source in the gas cylinder 14 is supplied to the reaction vessel 2 via the pressure reducing valve 15 and the flow rate controller 16.
V ₁ ~V ₇ shows the valve. Gas supply controller 7
Controls the flow rate of the gas source passing through each source supply channel of the gas supply system 1 and the opening / closing time of the valve based on a command from the crystal growth sequence controller 10.

The pressure reducing system 3 is for exhausting the gaseous raw material in the reaction vessel 2 while controlling it at a constant pressure, and is constituted, for example, as shown in FIG. In FIG.
Decompression controller 9, upon receiving the exhaust instruction of pressure from crystal growth sequence controller 10 (FIG. 15), closing the bypass valve V ₈ atmospheric pressure line first, and then open the stop valve V ₉ of the vacuum line. Then, the pressure in the reaction vessel 2 was measured by the pressure gauge 17, control an output corresponding to the difference between the measured pressure and the set pressure valve (e.g., butterfly valve) applied to the V _10, enters the control loop. The reaction vessel 2 to return to atmospheric pressure, closing the stop valve V _9, opening the bypass valve V ₈ when it receives a signal container pressure becomes atmospheric pressure. FIG.
In 7, reference numeral 18 denotes a filter, and 19 denotes a vacuum pump.

The substrate exchange system 5 is for placing a substrate on a susceptor or removing a substrate after crystal growth. When the substrate is exchanged, the substrate exchange chamber of the substrate exchange system 5 is connected to the reaction vessel 2, so that the substrate exchange chamber is filled with an inert gas, thereby preventing the reaction vessel 2 from being contaminated.

The reaction vessel 2 is for bringing the reaction gas into contact with the heated substrate and depositing the resulting product on the substrate. This reaction vessel 2 generally comprises a susceptor,
It consists of a vessel surrounding the susceptor, a gas inlet, an outlet and a heating source. As a heating method, heating by an infrared lamp, resistance heating, high-frequency heating, or the like is used.

An embodiment of the present invention will be described below with reference to the drawings. In all the drawings of the embodiment,
The same or corresponding parts are denoted by the same reference numerals. FIG. 1 shows a horizontal MOCVD apparatus according to one embodiment of the present invention,
In particular, it shows the reaction tube and the substrate exchange chamber. Other components of the horizontal MOCVD apparatus according to this embodiment, that is, a gas supply system, a decompression system, an abatement system, etc.
This is the same as a general MOCVD apparatus, particularly a horizontal MOCVD apparatus.

In FIG. 1, reference numeral 21 denotes a horizontal reaction tube made of, for example, quartz having a rectangular cross section, and reference numeral 22 denotes a substrate exchange chamber made of, for example, stainless steel. In this case, the lower part of the reaction tube 21 has an opening 2 into which a susceptor described later is fitted.
1a is provided. The shape of the opening 21a is, for example, a rectangle. Further, a projection 21b for fixing the reaction tube is provided below the reaction tube 21 so as to surround the opening 21a. On the other hand, the upper plate of the substrate exchange chamber 22 at a portion corresponding to the opening 21a is provided with an opening 22a having a shape substantially similar to the protrusion 21b, but having a slightly smaller size. Then, by being fixed to a portion of the periphery of the opening 22a the lower portion of the protruding portion 21b via the O- ring O _1, and the reaction tube 21 and the substrate replacement chamber 22 are fixed to each other.

An opening 21a provided at the lower part of the reaction tube 21
, A susceptor 23 made of, for example, carbon is fitted therein. The susceptor 23 forms a part of the tube wall of the reaction tube 21 when fitted in the opening 21a. Here, when the susceptor 23 is fitted into the opening 21a, the step 23a provided on the outer peripheral portion of the upper part of the susceptor 23 comes into contact with the outer wall surface of the reaction tube 21 in a portion around the opening 21a. Positioning is performed.

FIG. 2 is a plan view of the upper part of the susceptor 23 to be inserted into the lower opening 21a of the reaction tube 21. In FIG. 2, a shallow circular hole 23b, 2
3c are provided adjacent to each other, and these holes 23
b, 23c, for example, carbon substrate rotation gear 24,
25 are rotatably stored. A substrate S on which crystal growth is to be performed is mounted on these substrate rotation gears 4 and 5. Here, these substrate rotation gears 24, 2
5 also constitutes a part of the susceptor. In this case, susceptor 2
The upper surfaces of the substrate rotating gears 24 and 25 when the fitting 3 is fitted into the opening 21 a of the reaction tube 21 almost coincide with the lower inner wall surface of the reaction tube 21. However, in this case, the susceptor 23 is connected to the opening 21 a of the reaction tube 21.
When the substrate S is fitted, the substrate S on the substrate rotating gears 24 and 25 is inclined at a predetermined angle in a direction in which the effective sectional area of the reaction tube 21 decreases toward the downstream side.

Another hole 23 is provided on the susceptor 23.
The motor gear 26 as shown in FIG. 3 is rotatably housed in the hole 23d. The motor gear 26 meshes with the substrate rotation gears 24 and 25, respectively, and the rotation of the motor gear 26 rotates the substrate rotation gears 24 and 25, respectively, so that the substrate S on them rotates with its central axis. It is designed to rotate around. Here, the reason why the substrate S is rotated is to perform uniform crystal growth on the substrate S.

The motor gear 26 rotates by transmitting the rotation of a shaft 27a of a motor 27 mounted on a susceptor pedestal to be described later to the motor gear 26 via, for example, an L-shaped wire 28 made of molybdenum. ing.
Here, as shown in FIG. 3, the transmission of the rotation by the L-shaped wire 28 is performed by providing the L-shaped bent end of the L-shaped wire 28 on the upper part of the motor gear 26. Hole 26 having a width slightly larger than the diameter of L-shaped wire 28
a.

In FIG. 1, below the susceptor 23,
The heater 29 and the infrared reflection plate 30 are stored and fixed. As the heater 29, for example, a thin film heater made of molybdenum is used. Further, as the infrared reflecting plate 30, for example, a member provided with an alumina film on a titanium vapor-deposited film is used. It should be noted that when the susceptor 23 is inserted into the opening 21a of the reaction tube 21, the heater 29 does not touch the reaction gas flowing into the reaction tube 21 at all.

In this embodiment, an upper end of a support spring 32 is fixed to a lower portion of the susceptor 23 via a heat insulating support 31. In this case, the support springs 32 are attached to the lower four corners of the susceptor 23, respectively. The lower end of the support spring 32 is fixed to an upper plate of a susceptor pedestal 33 made of, for example, stainless steel. The expansion and contraction of the support spring 32 allows the entire susceptor 23, heater 29 and infrared reflection plate 30 to move vertically with respect to the susceptor pedestal 33. As the support spring 32, one having a degree of freedom only in one direction (in this case, the vertical direction in FIG. 1) is preferably used. Specifically, for example, a leaf spring made of molybdenum is used as the support spring 32.

The upper plate of the susceptor base 33 has holes 33a, 3
3b is provided. The shaft 27a of the motor 27 is passed through the hole 33a via a shaft seal not shown. Further, a hermetic seal H is attached to the hole 33b, and the lead wire L connected to one end of the heater 29 is led out to the lower part of the upper plate of the susceptor pedestal 33 by the hermetic seal H. In addition, one end of the thermocouple T for measuring the temperature of the susceptor 23 is also drawn out through a hole (not shown) provided in the upper plate of the susceptor base 33.

On the side of the susceptor pedestal 33, a linear actuator 34 for converting a rotary motion into a linear motion is attached. The linear actuator 34 moves linearly along the linear shaft 35 passing through the hole 22b provided in the bottom plate of the substrate exchange chamber 22, so that the susceptor pedestal 33, and thus the susceptor 23, can be moved up and down. I have. In this case, the lower end of the linear shaft 35 is connected to the shaft 37a of the motor 37 by a shaft coupling 36, and the rotation of the shaft 37a causes the linear shaft 35 to rotate.
, The linear actuator 34 moves linearly. The linear shaft 35 is rotatably supported in the substrate exchange chamber 22 by a support member (not shown). Also, a hole 22b in the bottom plate of the substrate exchange chamber 22
The space between the shaft and the linear shaft 35 is vacuum-sealed by, for example, an electromagnetic fluid seal (not shown). further,
In this case, the guide wheels 38 attached to the upper and lower sides of the susceptor pedestal 33 are mounted on the substrate exchange chamber so that the susceptor pedestal 33 can be raised and lowered with the linear actuator 34 with high accuracy and smoothly. It moves on a guide rail 39 mounted between the top plate and the bottom plate 22 and is guided thereby.

As shown in FIGS. 4 and 5, the linear actuator 34 has, for example, three special ball bearings BB attached to both end surfaces of a pair of block halves 34a and 34b made of aluminum, for example.
Here, these ball bearings BB are attached so as to wrap the linear shaft 35 at an inclination angle corresponding to their lead angle. Symbol B is block half 3
4 shows a hexagon socket head cap screw with a coil spring for fastening 4a, 34b to each other. The linear actuator 34 is commercially available under the trade name "Rollix".

In the linear actuator 34, an axial driving force is generated due to a frictional force between the ball bearing BB and the linear shaft 35, whereby the linear actuator 34 moves linearly along the linear shaft 15. I do.

Referring again to FIG. 1, a finger arm 41 for adsorbing a substrate is attached to the tip of a robot arm 40 which can be moved in the horizontal direction by a mechanism not shown. FIG. 6 shows details of the finger arm 41 and its vicinity. As shown in FIG. 6, the root of the finger arm 41 is
0 is attached to a shaft 43 passed through the inside of the shaft. At the tip of the robot arm 40, three shafts 40a are fixed symmetrically around the central axis, and one of them is provided with a ball bearing BB 'via a coil spring 44 at the tip, and the other is fixed. Similar ball bearings BB 'are directly attached to the two tips. These ball bearings BB 'are
Is provided so as to wrap around the root portion of the. Then, the robot arm 4 is formed by these ball bearings BB '.
0, and one of these ball bearings BB 'is attached to the coil spring 44, so that the finger arm 41 around the shaft 42 can be rotated. ing.

On the lower surface of the finger arm 41, circular holes 41a and 41b for vacuum suction are provided. FIG.
FIG. 3 shows the planar shape of these holes 41a and 41b. These holes 41a and 41b are formed in the finger arm 41 along the axial direction thereof for vacuum suction holes 41c.
(FIG. 6), and the hole 41c is further provided with a vacuum suction hole (not shown) provided along the axial direction inside the shaft 43 passed through the robot arm 40. Communicating. The hole for vacuum suction provided inside the shaft 43 is connected to a vacuum pump (not shown) provided outside the substrate exchange chamber 22. The shaft 4 passed through the inside of the robot arm 40 by this vacuum pump
The substrate S is evacuated to the holes 41 a and 41 b on the lower surface of the finger arm 41 by evacuating the vacuum suction hole provided inside the finger arm 41 and the vacuum suction hole 41 c provided inside the finger arm 41. It can be adsorbed. FIG. 7 shows the relative positional relationship between the substrates S when vacuum suction is performed on the substrates S by the finger arms 41.

Next, a description will be given of a method of exchanging substrates in the horizontal MOCVD apparatus according to this embodiment having the above-described structure.

Now, let us consider a state immediately after the substrate exchange is performed after the crystal growth on the substrate S is completed and the supply of the gaseous raw material into the reaction tube 21 is stopped. In this state, FIG.
As shown in (1), the susceptor 23 on which the substrate S on which the crystal growth has been completed is placed is fitted into the opening 21a at the lower part of the reaction tube 21. Further, between the upper inner wall of the upper and the substrate replacement chamber 22 of susceptor pedestal 33 is vacuum sealed by O- ring O _2. At this time, the space surrounded by the susceptor 23, a part of the outer wall of the reaction tube 21, the protrusion 21 b, the upper plate of the susceptor pedestal 33, and the like is inactive through a hole 22 c provided in the upper plate of the substrate exchange chamber 22. A gas, for example, a nitrogen (N ₂ ) gas is introduced, and the N ₂ gas flows out into the reaction tube 21 through a hole 21 c provided in a lower tube wall of the reaction tube 21. Thereby, this space and the inside of the reaction tube 21 have substantially the same pressure. Instead of providing the hole 21c in the lower tube wall of the reaction tube 21, a hole may be provided in a portion on the downstream side of the susceptor 23, and the N ₂ gas may flow out into the reaction tube 21 through this hole. On the other hand, a hole 22d is formed in a lower portion of the side wall of the substrate exchange chamber 22,
22e are provided, the N ₂ gas is introduced into the substrate replacement chamber 22 through the holes 22 d, which is a substrate replacement chamber 22 through the holes 22e to N ₂ gas is discharged to the outside. The reason why the N ₂ gas is introduced into the substrate exchange chamber 22 in this way is to prevent the reaction tube 21 from being contaminated when the substrate is exchanged.

Next, by rotating the shaft 37a of the motor 37, the linear actuator 34 is lowered along the linear shaft 35, whereby the susceptor pedestal 33
Is lowered to a substrate exchange position indicated by a dashed line in FIG. FIG. 8 shows a state where the susceptor pedestal 33 has been lowered to the substrate exchange position.

Here, first, the susceptor 23 is connected to the reaction tube 21.
When the susceptor 23 was fitted in the lower opening 21a of the reaction tube 21, the susceptor 23 was pressed against the outer wall around the opening 21a of the reaction tube 21 by the elastic force of the support spring 32.
As described above, when the susceptor 23 starts to separate from the outer wall of the reaction tube 21 as the susceptor pedestal 33 descends, the support spring 32 gradually expands, and the susceptor 23 is completely separated from the outer wall of the reaction tube 21 (for example, FIG. In the state shown in FIG. 9, the support spring 12 is
3 and the length determined by its spring constant and natural length.

After lowering the susceptor pedestal 33 to the substrate exchange position shown in FIG.
Is moved in the horizontal direction so that the finger arm 41 is positioned relative to the substrate S on the susceptor 23 as shown in FIG. Finger arm 4 in this state
FIG. 10 is an enlarged view of a portion 1 and the vicinity of the susceptor 23. Here, since the susceptor 23 is supported on the susceptor pedestal 33 by the support spring 32, the susceptor 23 with respect to the upper plate of the susceptor pedestal 33 in a state where the susceptor 23 is completely separated from the outer wall of the reaction tube 21 and becomes free.
Is generally different from that when the susceptor 23 is fitted in the opening 21a of the reaction tube 21.

Next, the susceptor pedestal 33 is slightly raised so that the finger arm 41 comes into contact with the substrate S on the susceptor 23. At this time, normally, as shown in FIG. 11, the tip of the finger arm 41 comes into contact with the substrate S, and vacuum suction starts from the holes 41a and 41b at the tip of the finger arm 41. Hole 41
Since a and 41b are not completely closed, the suction pressure is not so high.

Next, when the susceptor pedestal 33 is further raised, the tip of the finger arm 41 is pushed by the substrate S, whereby the finger arm 41 rotates around the axis 42 at the base thereof, and finally the substrate S It becomes parallel to the surface (FIG. 12). At this time, the hole 4 of the finger arm 41
1a and 41b are completely closed, and the suction pressure rises sharply. Therefore, when this pressure rise is detected and a signal is generated, and the susceptor pedestal 33 is lowered by this signal, FIG.
As shown in (2), the substrate S is held by the finger arm 41 while being vacuum-sucked. At this time, the restoring force of the coil spring 44 causes the finger arm 41
Rotates about its base axis 42 and returns to its position before contacting the substrate S.

As described above, the robot arm 40 is moved to the position shown in FIG.
After being moved to the middle left side, the substrate S is stored in a carrier in a substrate storage chamber (not shown) attached to the substrate exchange chamber 22. Thereafter, the substrate S in another carrier in which a new substrate S to be subjected to crystal growth is stored is moved to the finger arm 4.
Then, the substrate S is placed on the susceptor 23 in the same procedure as described above.

Next, the susceptor pedestal 33 is
₂ is raised until it hits the upper inner wall of the substrate exchange chamber 22. At this time, the susceptor 23 is connected to the opening 21 a of the reaction tube 21.
Fit into. Thus, the board replacement is completed.

According to this embodiment, the following various advantages can be obtained. That is, since the substrate is exchanged by attaching and detaching the susceptor 23 from the direction perpendicular to the reaction tube 21 to the opening 21a at the lower part of the reaction tube 21, the substrate is inserted into the reaction tube when the substrate is exchanged. The conventional horizontal type M shown in FIG.
There is no problem of contamination of the substrate surface as in the OCVD apparatus. In addition, substrate exchange is easy.

Since the susceptor pedestal 33 is moved up and down by using the clean linear actuator 34 without lubrication itself, the linear actuator 34
The linear actuator 34 does not become a source of impurities, and there is no problem of the linear actuator 34 contaminating the surface of the substrate S. Furthermore, since the motor 37 for rotating the linear shaft 35 can be installed outside the substrate exchange chamber 22, there is no problem of contamination of the substrate S by impurities generated by the motor 37 as a source. Further, since only the space required for the motor 37 is required below the substrate exchange chamber 22, the space can be saved. Furthermore, even if an excessive force is applied to the linear actuator 34 for some reason,
The linear actuator 34 only slips on the linear shaft 35 and is safe.

Further, the susceptor 23 and the susceptor pedestal 33
The distance between when the susceptor 23 is fitted into the lower opening 21a of the reaction tube 21 and when the susceptor 23 is completely separated from the lower outer wall of the reaction tube 21 as shown in FIG. Differently, the relative position of the tip of the L-shaped wire 28 with respect to the motor gear 26 is different, but regardless of this, the rotation of the L-shaped wire 28 can always be transmitted to the motor gear 26. That is, when the susceptor 23 is fitted into the lower opening 21a of the reaction tube 21, the tip of the L-shaped wire 28 is located above the hole 26a of the motor gear 26 as shown in FIG. When completely separated from the outer wall of the tube 21, the tip of the L-shaped wire 28 is located below the hole 26a of the motor gear 26 as shown in FIG. 14B. In other words, the susceptor 23 and the susceptor pedestal 33
The tip of the L-shaped wire 28 is always in the hole 26a of the motor gear 26 even if the distance between the L-shaped wire 28 changes, so that the rotation of the L-shaped wire 28 can always be transmitted to the motor gear 26. It is.

Since the finger arm 41 is rotatable around the shaft 42 at the root thereof and also around the shaft 43 of the robot arm 40, the susceptor pedestal 33
The substrate S on the susceptor 23 can be easily vacuum-sucked by the finger arm 41 regardless of the inclination angle of the susceptor 23 with respect to the upper plate.

As described above, one embodiment of the present invention has been specifically described. However, the present invention is not limited to the above-described embodiment, and various modifications based on the technical idea of the present invention are possible. .

For example, the horizontal MOC according to the above-described embodiment is
The shape and material of each part constituting the VD device can be appropriately changed as needed.

The same technical idea as that of the present invention can be applied to a horizontal heat treatment apparatus, specifically, a horizontal diffusion apparatus or a horizontal annealing apparatus.

[0051]

As described above, according to the horizontal vapor phase epitaxy apparatus of the present invention, the substrate does not have to be moved downstream in the reaction tube when the substrate is replaced, so that the substrate can be replaced when the substrate is replaced. Can be prevented from being contaminated.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a main part of a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 2 is a plan view showing a susceptor used in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 3 is a sectional view and a plan view showing a motor gear for rotating a substrate used in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 4 is a front view showing a linear actuator used for lifting and lowering a susceptor pedestal in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 5 is a side view showing a linear actuator used for lifting and lowering a susceptor pedestal in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 6 is a schematic diagram showing a finger arm used for substrate exchange in the horizontal MOCVD apparatus according to one embodiment of the present invention and the vicinity thereof;

FIG. 7 is a plan view showing a main part of a finger arm used for substrate exchange in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 8 is a schematic diagram showing a state in which a susceptor pedestal is lowered to a substrate exchange position in the horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 9 is a schematic diagram showing a state in which the susceptor pedestal is lowered and the susceptor is completely separated from the outer wall of the reaction tube in the horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 10 is a schematic diagram for explaining a method of vacuum-sucking a substrate with a finger arm at the time of substrate exchange in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 11 is a schematic diagram for explaining a method of vacuum-sucking a substrate with a finger arm at the time of substrate exchange in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 12 is a schematic diagram for explaining a method of vacuum-adsorbing a substrate by a finger arm at the time of substrate exchange in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 13 is a schematic diagram for explaining a method of vacuum-adsorbing a substrate by a finger arm at the time of substrate exchange in a horizontal MOCVD apparatus according to one embodiment of the present invention.

FIG. 14 is a sectional view showing a motor gear for rotating a substrate used in a horizontal MOCVD apparatus according to an embodiment of the present invention.

FIG. 15 is a schematic diagram illustrating a configuration of a general MOCVD apparatus.

FIG. 16 is a schematic diagram illustrating a configuration example of a gas supply system in a general MOCVD apparatus.

FIG. 17 is a schematic diagram illustrating a configuration example of a reduced pressure system in a general MOCVD apparatus.

FIG. 18 is a schematic diagram illustrating an example of a conventional horizontal MOCVD apparatus.

[Explanation of symbols]

 Reference Signs List 21 reaction tube 21a opening 22 substrate exchange chamber 22a opening 23 susceptor 24, 25 substrate rotation gear 26 motor gear 28 L-shaped wire 29 heater 30 infrared reflector 32 support spring 33 susceptor pedestal 34 linear actuator 35 linear shaft 40 robot arm 41 finger arm S substrate

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-74712 (JP, A) JP-A-3-76112 (JP, A) JP-A-5-21421 (JP, A) 173774 (JP, A) JP-A-3-240954 (JP, A) JP-A-63-136337 (JP, U) JP-A-1-153368 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/44 H01L 21/68

Claims (14)

(57) [Claims] In a horizontal vapor phase growth apparatus having a horizontal reaction tube, a susceptor for mounting a substrate, and a heating means for heating the susceptor, an opening provided in a tube wall of the reaction tube is provided. The susceptor is configured to be detachable , and the susceptor rotates with respect to the fixed portion and the fixed portion.
The substrate is placed on the rotating part.
Horizontal vapor phase growth apparatus, characterized in that that. 2. A horizontal reaction tube and a support for mounting a substrate.
A sceptor and heating means for heating the susceptor.
In horizontal vapor deposition apparatus, the susceptor in an opening provided in the tube wall of the reaction tube wear have
Detachably configured, the heating means is opposed to the reaction tube with respect to the susceptor
The susceptor and the heating means are provided integrally with the susceptor at
Mounted on a vertically movable table via a support spring
Horizontal vapor phase growth apparatus characterized by being. 3. A horizontal reaction tube and a support for mounting a substrate.
A sceptor and heating means for heating the susceptor.
In horizontal vapor deposition apparatus, the susceptor in an opening provided in the tube wall of the reaction tube wear have
The susceptor is configured to be detachable, and the susceptor rotates with respect to the fixed portion.
The substrate is placed on the rotating unit.
Is, the rotating part consists of a first gear, the first gear first
The second gear is configured to be rotatable by a second gear and connected to a shaft of a motor via a wire.
The torque of the motor is transmitted to the
Horizontal vapor phase growth apparatus, characterized in that that. 4. A horizontal reaction tube and a support for mounting a substrate.
A sceptor, and heating means for heating the susceptor,
A substrate exchange chamber for exchanging substrates on the susceptor;
In horizontal vapor deposition apparatus, the susceptor in an opening provided in the tube wall of the reaction tube wear have
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing, set the table in a direction perpendicular to the reaction tube.
By moving the susceptor into the substrate exchange chamber.
And the heating means are introduced, and a direction perpendicular to the reaction tube in the substrate exchange chamber is provided.
Lubrication-free linear actuator
A horizontal vapor phase growth apparatus characterized by using a heater . 5. A horizontal reaction tube and a support for mounting a substrate.
A sceptor, and heating means for heating the susceptor,
A substrate exchange chamber for exchanging substrates on the susceptor;
In horizontal vapor deposition apparatus, the susceptor in an opening provided in the tube wall of the reaction tube wear have
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing, set the table in a direction perpendicular to the reaction tube.
By moving the susceptor into the substrate exchange chamber.
And the heating means are introduced, and can be moved along a rotation axis provided in the substrate exchange chamber.
A simple actuator is attached to the base,
The frictional force between the bearing and the rotating shaft
Is configured to generate an axial driving force of the rotating shaft.
And horizontal vapor phase growth apparatus characterized in that is. 6. A horizontal reaction tube and a support for mounting a substrate.
A sceptor, and heating means for heating the susceptor,
A substrate exchange chamber for exchanging substrates on the susceptor;
In horizontal vapor deposition apparatus, the susceptor in an opening provided in the tube wall of the reaction tube wear have
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing, set the table in a direction perpendicular to the reaction tube.
By moving the susceptor into the substrate exchange chamber.
And configured to introduce said heating means, in the substrate exchange chamber movable for exchanging the substrate
An arm is provided, the arm comprising a first arm and the arm;
Attached to the tip, and was vacuum adsorb the substrate
A second arm having a hole for the second arm.
Centering on one end of the first arm on the tip side.
Rotatable and rotatable about its central axis
And horizontal vapor phase growth apparatus characterized in that is. 7. A horizontal reaction tube and a support for mounting a substrate.
A sceptor, and heating means for heating the susceptor,
A substrate exchange chamber for exchanging substrates on the susceptor;
In horizontal vapor deposition apparatus, the susceptor in an opening provided in the tube wall of the reaction tube wear have
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing, set the table in a direction perpendicular to the reaction tube.
By moving the susceptor into the substrate exchange chamber.
And introducing the heating means, and when the susceptor is fitted in the opening,
At least by the partition wall including the susceptor and the base.
A partitioned space is formed, and this space is
Horizontal vapor phase epitaxy characterized by communication with the inside
Place. 8. A horizontal processing tube and a support for mounting a substrate.
A sceptor and heating means for heating the susceptor.
In horizontal heat treatment apparatus, the susceptor in an opening provided in the tube wall of the process tube wear have
The susceptor is configured to be detachable, and the susceptor rotates with respect to the fixed portion.
The substrate is placed on the rotating part.
Horizontal heat treatment apparatus, characterized in that that. 9. A horizontal processing tube and a support for mounting a substrate.
A sceptor and heating means for heating the susceptor.
In horizontal heat treatment apparatus, the susceptor in an opening provided in the tube wall of the process tube wear have
Detachably configured, the heating means is opposed to the process pipe with respect to the susceptor
The susceptor and the heating means are provided integrally with the susceptor on the side of the processing tube.
Mounted on a vertically movable table via a support spring
Horizontal thermal processing apparatus characterized by being. 10. A horizontal processing tube for mounting a substrate.
A susceptor, and heating means for heating the susceptor
Wearing the lateral heat treatment apparatus, the susceptor in an opening provided in the tube wall of the process tube having a
The susceptor is configured to be detachable, and the susceptor rotates with respect to the fixed portion.
The substrate is placed on the rotating unit.
Is, the rotating part consists of a first gear, the first gear first
The second gear is configured to be rotatable by a second gear and connected to a shaft of a motor via a wire.
The torque of the motor is transmitted to the
Horizontal heat treatment apparatus, characterized in that that. 11. A horizontal processing tube for mounting a substrate.
Susceptor and heating means for heating the susceptor
And a substrate exchange chamber for exchanging substrates on the susceptor
Wearing the lateral heat treatment apparatus, the susceptor in an opening provided in the tube wall of the process tube having bets
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing the table, set the table in a direction perpendicular to the processing tube.
By moving the susceptor into the substrate exchange chamber.
And the heating means is arranged to be introduced into the substrate exchange chamber in a direction perpendicular to the processing tube.
Lubrication-free linear actuator
A horizontal heat treatment apparatus using a heater . 12. A horizontal processing tube for mounting a substrate.
Susceptor and heating means for heating the susceptor
And a substrate exchange chamber for exchanging substrates on the susceptor
Wearing the lateral heat treatment apparatus, the susceptor in an opening provided in the tube wall of the process tube having bets
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing the table, set the table in a direction perpendicular to the processing tube.
By moving the susceptor into the substrate exchange chamber.
And the heating means are introduced, and can be moved along a rotation axis provided in the substrate exchange chamber.
A simple actuator is attached to the base,
The frictional force between the bearing and the rotating shaft
Is configured to generate an axial driving force of the rotating shaft.
Horizontal heat treatment apparatus, characterized by that. 13. A horizontal processing tube for mounting a substrate.
Susceptor and heating means for heating the susceptor
And a substrate exchange chamber for exchanging substrates on the susceptor
Wearing the lateral heat treatment apparatus, the susceptor in an opening provided in the tube wall of the process tube having bets
The susceptor and the heating means are configured to be detachable,
Mounted on a vertically movable table,
When replacing the table, set the table in a direction perpendicular to the processing tube.
By moving the susceptor into the substrate exchange chamber.
And configured to introduce said heating means, in the substrate exchange chamber movable for exchanging the substrate
An arm is provided, the arm comprising a first arm and the arm;
Is attached to the tip of the
A second arm having a hole for the second arm.
Centering on one end of the first arm on the tip side.
Rotatable and rotatable about its central axis
Horizontal heat treatment apparatus, characterized by that. 14. A horizontal processing tube for mounting a substrate.
Susceptor and heating means for heating the susceptor
And a substrate exchange chamber for exchanging substrates on the susceptor
In a horizontal heat treatment apparatus having The susceptor is attached to an opening provided in the tube wall of the processing tube.
It is configured to be removable, The susceptor and the heating means are provided with respect to the processing tube.
Mounted on a vertically movable table,
When replacing the table, set the table in a direction perpendicular to the processing tube.
By moving the susceptor into the substrate exchange chamber.
And configured to introduce the heating means, When the susceptor is inserted into the opening,
At least by the partition wall including the susceptor and the base.
A partitioned space is formed, and this space and the above Processing pipe
Internal communication Horizontal heat treatment equipment characterized by the following:
Place.