JP3252434B2 - Magnetron sputtering equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus, and more particularly, to a magnetron sputtering apparatus in which the intensity of the horizontal component of the leakage magnetic field at the end portion on a non-magnetic target and the intensity of the horizontal component of the leakage magnetic field at the central portion are substantially equal. Further, the present invention relates to a magnetron sputtering apparatus in which the horizontal component of the leakage magnetic field at the end is made wide and uniform.

[0002]

2. Description of the Related Art As shown in FIG. 10, a conventional general magnetron sputtering apparatus has a substrate holder 1 mounted on the upper part of a container and a lower part of the substrate holder 1 in a magnetron sputtering container. It has a substrate 2 to which particles are adhered, a target 3 arranged below the substrate 2 and sputtered with the particles, and a permanent magnet (or electromagnet) 4 disposed slightly below the target 3. In the figure, reference numeral 5 denotes a line of magnetic force, 6 denotes a state of the target after sputtering (erosion), 7 denotes a sputtered particle, and 8 denotes an inert gas (Ar or the like).

As described above, in the magnetron sputtering apparatus, a permanent magnet (or an electromagnet) is provided below the target 3 so that a magnetic field is generated on the surface of the target 3, and a plasma is formed just above the target by the magnetic field. It is configured so that ionized sputtered particles confined in plasma fly and adhere to a substrate disposed above a target.

In order to make the horizontal magnetic field in the range A of the target 3 shown in FIG. 1 wider and uniform, as shown in FIG. 11, the distance between the target (not shown in FIG. 11 for clarity) is increased. It has been proposed to install a magnetic body 11 on the surface. In addition, it has been proposed to install the magnetic bodies 12 on both sides of the target 3, and it is also proposed to install the magnetic bodies 9 and 10 between these magnetic bodies and the permanent magnet 4. ing. As a conventional additional magnetic material,
As shown in FIG. 11, shorter than the above-described magnetic bodies 9 and 10,
It has been proposed that magnetic bodies 11 and 12 having substantially the same length are used.

[0005]

However, the range A
Even if the horizontal magnetic field of the leakage magnetic field of
No consideration is given to the strength of the horizontal magnetic field of the stray magnetic field in the range A and the strength of the horizontal magnetic field of the stray magnetic field in the range B shown in FIG.
Is not equal to the strength of the horizontal magnetic field. For this reason, the consumption of the targets in the range A and the range B is different, and the uniformity of the horizontal component of the leakage magnetic field in the range B is not considered. It was inefficient.

Accordingly, an object of the present invention is to make the intensity of the horizontal component of the stray magnetic field in the range A and the intensity of the horizontal component of the stray magnetic field in the range B the same, and to make the horizontal component of the stray magnetic field in the range B uniform and wide. To provide a magnetron sputtering apparatus.

[0007]

SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the present invention provides a two-sided, side-by-side longitudinal arrangement.
For two wide rectangular parallelepiped targets, a rod-shaped upper central magnetic body disposed between the two targets, and a rod-shaped upper side magnetic body disposed on the outer side of each of the two targets An end between a central magnetic pole portion extending in a longitudinal direction of the target corresponding to a position below the upper central magnetic body and the upper side magnetic body, two side magnetic pole portions, and two side magnetic pole portions. A magnet having a partial magnetic pole portion, and a rod-shaped lower central magnetic body disposed on the upper surface of the central magnetic pole portion and the upper surface of the two side magnetic pole portions, respectively.
The lower central magnetic body, and a lower end magnetic body disposed on an upper surface of an end magnetic pole portion between opposing ends on both sides of the two side magnetic pole portions; A magnetron sputtering apparatus wherein the longitudinal length of the magnet is shorter than the longitudinal length of the target, and the longitudinal length of the lower side magnetic body is substantially the same as the longitudinal length of the side magnetic pole portion of the magnet. In the above, the longitudinal length of the upper central magnetic body is shorter than the longitudinal length of the lower central magnetic body, and the longitudinal length of the upper side magnetic body is the longitudinal length of the lower side magnetic body. A magnetron sputtering apparatus characterized by being substantially the same in length is employed.

[0008]

Next, a preferred embodiment of the present invention will be described with reference to the drawings. As shown in FIGS. 2A and 2B, in the cathode structure of the magnetron sputtering apparatus according to the present invention, a magnetic body 9 and a magnetic body 10 are provided on the upper surfaces of the magnetic poles of the permanent magnet 4, respectively. 11 and magnetic body 1
2, the magnetic body 11 is installed shorter than the magnetic body 9 therebelow, and the magnetic body 12 is installed below the magnetic body 1 therebelow.
0, and a target is provided between the magnetic body 11 and the magnetic body 12.

It has been found that the cathode structure of the present invention can obtain a more uniform distribution of the horizontal component of the magnetic field in the range A of the target than the conventional cathode structure shown in FIG. Have been. That is,
It has been found that by making the magnetic body 11 shorter than the magnetic body 9 and making the magnetic body 10 and the magnetic body 12 the same length, the horizontal component of the leakage magnetic field in the range B can be made wide and uniform, and the strength can be further reduced. It has been found that the target utilization efficiency can be improved by making the intensity of the horizontal component of the leakage magnetic field in the range A approximately equal to that of the target.

Hereinafter, specific examples and comparative examples of the present invention will be described.

Example 1 In the magnetron sputtering apparatus shown in FIGS. 2A and 2B, c / d was set to 0.208, and iron having a magnetic permeability of 500 was used as the magnetic material. At this time, when the horizontal component of the leakage magnetic field in the range A on the target 3 was measured, the horizontal component was as shown in FIG.
More than 80% of the target surface is not uniform with an error of about 10% at an intensity of about 1050 gauss, and the horizontal component of the stray magnetic field in the range B is measured.
As shown in FIG. 5, at least about 60% of the surface of the target became uniform with an error of about 10% at an intensity of about 1150 Gauss.

Comparative Example 1 For comparison with the present invention, the intensity of the horizontal component of the leakage magnetic field in the ranges A and B in the conventional sputtering cathode structure as shown in FIG. 11 was measured. Note that iron having a magnetic permeability of 500 was used as the magnetic material.
At this time, the horizontal component of the leakage magnetic field in the range A on the target is, as shown in FIG. 5, about 80% of the target surface uniform with an error of about 10% at an intensity of about 1050 gauss, and the range B As shown in FIG. 6, the horizontal component of the leakage magnetic field was uniform at 50% of the target surface with an error of about 10% at an intensity of about 1100 gauss.

Comparative Example 2 For comparison with the sputtering cathode structure of the present invention, a sputtering cathode in which the magnetic body 11 above the magnetic body 9 has the same length as the magnetic body 9 as shown in FIG. The structure was fabricated, and the intensity of the horizontal component of the leakage magnetic field in the range A and the range B was measured. At this time, the horizontal component of the leakage magnetic field in the range A on the target is:
As shown in FIG. 8, at an intensity of about 1050 gauss, about 10%
Approximately 80% of the target surface is uniform due to the following error, and the horizontal component of the leakage magnetic field in the range B is, as shown in FIG.
45% of the target surface was uniform with an error of about 10% at an intensity of about 1450 Gauss.

[0014]

As described above, according to the present invention,
The intensity of the horizontal component of the leakage magnetic field in the range A and the intensity of the horizontal component of the leakage magnetic field in the range B can be made substantially the same, and the horizontal component of the leakage magnetic field in the range B can be made wide and uniform.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a sputtered range of a target surface of a sputtering cathode structure of a magnetron sputtering apparatus.

FIG. 2A is a perspective view showing the entire sputtering structure of a magnetron sputtering apparatus of the present invention, and FIG. 2B is a front view thereof.

FIG. 3 is a graph showing a horizontal component of a leakage magnetic field with respect to a target when the sputtering cathode structure of the magnetron sputtering apparatus of the present invention is used.

FIG. 4 is a graph showing a horizontal component of a leakage magnetic field with respect to a target when the sputtering cathode structure of the magnetron sputtering apparatus of the present invention is used.

FIG. 5 is a graph showing a horizontal component of a leakage magnetic field with respect to a target when a sputter cathode structure of a conventional magnetron sputtering apparatus is used.

FIG. 6 is a graph showing a horizontal component of a leakage magnetic field with respect to a target when a sputtering cathode structure of a conventional magnetron sputtering apparatus is used.

FIG. 7 is a perspective view of a sputtering cathode structure of a magnetron sputtering apparatus of a comparative example.

FIG. 8 is a graph showing a horizontal component of a leakage magnetic field with respect to a target when a sputtering cathode structure of a magnetron sputtering apparatus of a comparative example is used.

FIG. 9 is a graph showing a horizontal component of a leakage magnetic field with respect to a target when the sputtering cathode structure of the conventional magnetron sputtering apparatus is used.

FIG. 10 is a front view of an entire conventional prototype magnetron sputtering apparatus.

FIG. 11 is a perspective view of a sputtering cathode structure of a conventional magnetron sputtering apparatus.

[Explanation of symbols]

 2 substrate 3 target 4 permanent magnet (or electromagnet) 9-12 magnetic material

Claims (2)

(57) [Claims] 1. A method according to claim 1, wherein two wide rectangular parallelepiped targets (3, 3) whose longitudinal sides are juxtaposed side by side are used.
A rod-shaped upper central magnetic body (11) arranged between two targets (3, 3), and a rod-shaped upper side magnetic body arranged on outer sides of each of the two targets (3, 3) (12,12)
And the upper central magnetic body (11) and the upper side magnetic body (1).
A magnet (4) having a central magnetic pole portion extending in the longitudinal direction of the target corresponding to the lower position of (2, 12), two side magnetic pole portions, and an end magnetic pole portion between the two side magnetic pole portions. A rod-shaped lower central magnetic body (9) and two lower side magnetic bodies (10, 10) respectively disposed on the upper surface of the central magnetic pole portion and the upper surfaces of the two side magnetic pole portions; A lower end magnetic body disposed on an upper surface of the end magnetic pole portion between opposing ends on both sides of the side magnetic pole portion, and a longitudinal length of the upper central magnetic body (11) is a target. The length in the longitudinal direction of the lower side magnetic body (10, 10) is shorter than the length in the longitudinal direction of (3, 3), and is substantially the same as the length in the longitudinal direction of the side magnetic pole portion of the magnet (4). in the magnetron sputtering apparatus is, the longitudinal length of the upper central magnetic (11) before The longitudinal length of the upper side magnetic body (12, 12) is shorter than the longitudinal length of the lower central magnetic body (9), and the longitudinal length of the lower side magnetic body (10, 10). A magnetron sputtering apparatus characterized by being substantially the same. 2. A magnetron sputtering apparatus according to claim 1, wherein said magnet further has end magnetic pole portions between opposing ends on both sides of said two side magnetic pole portions. A lower end magnetic body is disposed on the upper surface of the end magnetic pole portion, and a distance between an inner side surface of the lower end magnetic body and an end of the lower central magnetic body (9) is d. Assuming that a distance between the end of the lower central magnetic body (9) and the end of the upper central magnetic body (11) is c, the relationship between c and d is 0 <c /.
A magnetron sputtering apparatus, wherein d <0.5.