JP3247734B2 - Logic circuit with atomic wires - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for constructing an ultra-high-density, ultra-high-speed logic circuit and a memory circuit.
A memory circuit and a logic circuit capable of performing ultra-high-density ultra-high-speed memory operation and logical operation in an atomic switch circuit that changes the conductivity of a fine wire by moving specific atoms in an atomic wire composed of a plurality of atoms. It is related to the construction method.

[0002]

2. Description of the Related Art Conventionally, a logic circuit has a resistance-transistor circuit (RTL), a diode-transistor circuit (DTL), and a transistor-transistor circuit (TT).
As in L), the switching characteristics of the transistor are mainly used. FIG. 2 shows an example of a TTL circuit composed of MOS transistors. In FIG. 2, inputs 101, 102
Is defined as the voltage applied to the gates of the MOS transistors 104 and 105. When the signal voltage level of one of the inputs 101 and 102 indicates “high”, the output 10
3 indicates "low". Inputs 101 and 102 are both "low".
, The output 103 indicates “high”. The logic operation as shown in the example of FIG. 2 is called a NAND logic circuit. A circuit having such a logical function is generally called a gate.

[0003] TTL circuits are widely used in integrated circuits because of their excellent stability against power supply voltage and noise. To explain this point in more detail, in the TTL circuit, if the input voltage is equal to or higher than the threshold voltage of the MOS transistor, the output rises to the power supply voltage, and if the input voltage is lower than the threshold voltage, the output remains at 0 volt. Generally, the threshold voltage is 1
Volts and the power supply voltage is 5 volts, so TTL
If a logic circuit is used, the voltage difference between "low" and "high" can be amplified from 1 volt to 5 volts. Therefore, even if the power supply voltage fluctuates somewhat, the output level is sufficiently higher than the threshold voltage, and stable operation is guaranteed. It is also resistant to noise up to a high level that cannot be considered with common sense of about 1 volt.

[0004] Since such a TTL circuit is formed using transistors, the integration density is determined by the processing dimensions of the transistors. For example, in the gate circuit example shown in FIG. 2, if the minimum processing dimension is 1 μm, the entire circuit can be accommodated in about 10 μm square. 0.5 minimum processing size
If it is set to μm, the circuit area becomes about 5 μm square and the area becomes 1/4. Therefore, the circuit size is about 1 μm square at about 0.1 μm, which is said to be the physical size reduction limit of the transistor. However, in conventional semiconductor technology, pn
Due to physical limitations such as the expansion of the depletion layer at the junction and statistical errors, further miniaturization is impossible in principle. On the other hand, the switching speed is determined by the time for charging and discharging the capacitance of the gate, the diffusion layer and the like.
For example, when an element having a minimum processing dimension of 1 μm is reduced to 0.1 μm, the switching time is reduced to 1/10. However, this also has a physical limit of reducing the element size to about 0.1 μm, so that the transistor circuit is also hampered by the physical limit in terms of speeding up. Further, in a conventional transistor circuit, it is necessary to flow a certain amount of electric charge for switching, and it is necessary to flow a large current for high-speed switching. As the current increases, the power consumed by the circuit increases, and the temperature of the circuit increases. In recent large-scale integrated circuits, it has become common to integrate about one million gates per square centimeter, and the power consumption per gate must be less than one hundred thousandth of a watt from the cooling limit. No. Therefore, as long as the conventional transistor circuit is used, there are limitations on the integration degree and the switching speed.
In order to realize future ultra-high performance logic circuits, completely new circuit components are required.

[0005]

SUMMARY OF THE INVENTION The present invention has been made to overcome the limitations of current logic circuit elements such as integration and speed. That is, in the conventional semiconductor device,
Since the integration density is determined by the dimensions of the transistor as the switching element, and the circuit performance is mainly determined by the switching time, which is the charge / discharge time of the transistor, a physical integration limit and a speed limit are generated. The present invention provides an ultra-high-integration, high-density element exceeding such a limit.

[0006]

SUMMARY OF THE INVENTION The present invention provides means for utilizing the switching at the atomic level to enable a memory operation and a logic operation in order to exceed the limitations of the above-mentioned conventional devices. Specifically, a memory circuit and a logic circuit are configured by using atoms as switches for changing the conductivity of an atomic wire.

[0007]

The principle of an atomic switch used as a switching device in the present invention will be described with reference to FIG. In a basic circuit configuration including an atomic wire 1, a switching atom 2 and a switching gate 3, both ends of the atomic wire 1 are connected to an input 4 and an output 5. Further, the switching gate 3 is connected to a switching power supply. As shown in FIG. 1A, the signal input from the input 4 is the switching atom 2
Is output to the output 5 when is connected to the atomic wire 1. On the other hand, as shown in FIG. 1 (b), when a signal is input from the switching power supply to the switching gate 3 and the position of the switching atom 2 is moved to be disconnected from the atomic wire 1, the signal input from the input 4 becomes Not output to output 5. Therefore, the configuration shown in FIG. 1 is a switching element at the atomic level, and is the smallest switching element that human beings can reach. The switching time of the present switching circuit is determined by the switching time of the switching gate.
This value is different from the conventional transistor, and is determined not by the charge / discharge of the circuit but by the time when the existence probability of electrons exceeds the threshold value, so that the signal propagates at the speed of light in principle. Therefore, according to the present invention, the fastest switching that can be reached by human beings becomes possible. The purpose of the present invention is to disclose an ultra-high-speed, ultra-high-density memory circuit and a logic circuit using the atomic switch.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments.

(Embodiment 1) This embodiment discloses a method of realizing an atomic wire, a switching gate, and a configuration of a switching atom. FIG. 3 shows a schematic view of a scanning tunneling microscope. Substrate scanning mechanism 11, probe 12, z
An axis motion detection mechanism 13 is provided. It is well known that by mounting a sample 14 on the substrate scanning mechanism 11 and scanning the probe 12, it is possible to detect atomic level irregularities on the surface of the sample 14.

In such a configuration, the atoms 15 present on the sample 14 are changed by the potential applied to the probe 12 to the probe 1.
It can be pulled to the second side or placed on the sample 14 side. Since the atoms 15 present on the sample 14 are generally positively charged, when a negative potential is applied to the probe 12, the atoms 15 are attracted to the probe 12, and when a positive potential is applied, the probe 15 12 and placed on a sample 14. Therefore, the desired kind and number of atoms are first placed on the surface of the sample 14, the position and the kind are detected by the function of the scanning tunneling microscope, and then the bias applied to the probe 12 is controlled to an appropriate value. Is picked up by the probe 12, and in that state, the probe 12 is moved to a predetermined position and the bias is changed, whereby a desired atom can be placed at that position. By repeating this operation, atoms of a predetermined type and number are sequentially arranged at predetermined positions on the surface of the sample 14, whereby an atomic wire can be realized. In order to place a required number of atoms of a required type on the surface of the sample 14, for example, by a vapor deposition method, a sputtering method, or the like, a required number of atoms or a larger amount of atoms than the required amount, for example, an atomic layer of about 1/10 monolayer Is formed. In order to form a plurality of types of atoms, only desired types of atoms can be deposited. After the formation of the atomic layer containing the necessary types and number of atoms, the atomic position is measured in a scanning tunneling microscope mode, and each atom may be placed at a predetermined position by the above-described method. The method of moving atoms does not necessarily need to be based only on the above method. For example, the probe 15 can move the atoms 15 on the surface of the sample 14 by sliding or rolling on the surface of the sample 14. For example, since the atoms 15 on the surface of the sample 14 are positively charged as described above, if the potential of the probe 12 is set at an appropriate positive voltage, the atoms 15 are moved while being pressed, and are set to a negative voltage. If you pull it, you can move it while pulling.

The structure of the atomic wire need not necessarily be a straight line as shown in FIG. For example, an element having a strongly directional bonding state may be more stable in a bent zigzag structure. In some cases, it is effective to repeat a unit structure in which a plurality of atoms are bonded in a ring, or to combine a plurality of structures to form an atomic wire. The structure of the atomic wire is not necessarily limited to these. For example, when the alkali metal atoms are arranged at equal intervals, a metallic conductive state is shown. However, when arranged at irregular intervals, they have semiconductor properties. If the atoms are arranged in the order of ababab with the intervals being a and b, the band gap differs depending on the size of a / b. For example, if a / b is changed by 1.01 or 1%, the band gap becomes about 0.07 eV. If this value is set to 1.1, that is, 10%, it becomes 0.3 eV. Thus, the band gap can be controlled by selecting the value of ab. The number of switching atoms does not need to be one, and a plurality of atoms can be moved at the same time or, if necessary, shifted in time and space. The switching atom itself may have a ring structure or a spherical structure. In that case, it is needless to say that the structure of the switching gate is a corresponding structure. It is also effective to provide a guide so that the switching atoms move only in a predetermined direction.

As shown in the principle diagram of FIG. 1, in order to realize the present invention, an atomic wire and a switching gate portion that are stationary on the surface of the sample 14 and a switching atom that moves on the surface of the sample 14 are used. It is effective to use two types of atoms. In the present invention, a silicon wafer on which a silicon oxide film was grown was used as the sample 14 and used as an atomic wire forming substrate. In the present embodiment, by using atoms having a large interaction energy with the surface of the sample 14, for example, silicon as atoms for atom wires and switching gate atoms, and using atoms having a small interaction, for example, gold as switching atoms, a predetermined value is obtained. Performance was obtained. The selection of the atomic species can be selected depending on the magnitude of the interaction with the sample surface as described above. Since the interaction is also a function of the temperature, suitable atoms vary depending on the temperature range used. In this embodiment, the structure shown in FIG. 1 was realized by controlling the temperature of the sample 14 to 40K. The sample temperature can take various values from 1K or less to about room temperature depending on the type of the substrate used, the atoms of the atomic wires placed thereon, and the switching atoms. The potential applied to the switching gate only needs to be a value sufficient to move the switching atoms. In this embodiment, the potential can be sufficiently moved at 0.01 volt. The higher the potential, the higher the speed of movement of the switching atoms and the higher the speed of the circuit operation.However, if the potential is too high, it may cause unnecessary or excessive movement of atoms and cause switch malfunctions. Is advantageous in terms of stability. As the atomic wires and the atoms for the switching gate, metal bond, covalent bond, and ionic bond atoms such as metal atoms and metalloid atoms can be used. If the temperature is sufficiently lowered, a molecular substance or a rare gas can be used.

Furthermore, the atomic switch disclosed in the present invention does not require a ground potential, as compared with a normal semiconductor circuit, and therefore can be simplified in configuration without one wiring.
Further, as is apparent from the following embodiments, since a complicated logic can be realized by a simple circuit configuration, the configuration is suitable for large scale and high integration.

(Embodiment 2) In the atomic switch shown in FIG. 1, it is necessary to apply a reverse bias to the gate in order to turn the switch, which has been "off" once, on again. In other words, when a positive bias is applied to turn "off", "o
To return to "n", it is necessary to add a negative bias. Conversely, to apply a negative bias to turn "off", "on"
To return to, it is necessary to apply a positive bias. Therefore, it is necessary to prepare both positive and negative power supplies for one switch, and the circuit configuration becomes too complicated to be practical.

The simplest method of turning the "off" gate to "on" is a reset gate (Japanese Patent Application No. 3-12345). According to the concept of the reset gate, since the same reset signal can be distributed to the entire chip, it can be operated as a synchronous circuit. This is a particularly important characteristic in computer operation, and the architecture currently used in all computers can be used as it is. FIGS. 4A and 4B show a normally-on type reset gate. From the state (a) which was initially "on", the switching atom 24 was moved by applying a signal to the gate 22, and the gate (b) that was turned "off" was applied a reset signal to the reset gate 23 and turned "on" again. Indicates a state in which The configuration shown in FIGS. 4A and 4B has the function of an inverter circuit. That is, it functions as a signal inversion circuit. Output 25 if the signal applied to gate 22 is "high"
Becomes "low", and the opposite gives the opposite output.

FIGS. 4C and 4D show a normally-off type reset gate. From the state (c) which was initially "off", the switching atom 24 was moved to "on" by applying a signal to the gate 22, and the gate turned "on" (d) is again turned "off" by applying a reset signal to the reset gate 23. Indicates a state in which Fig. 4 (c) (d)
1 functions as a signal transmission circuit. Gate
If the signal applied to 22 is "high", the output will be "high", and vice versa, the opposite output will be obtained.

(Embodiment 3) This embodiment discloses a configuration example of a basic logic circuit such as NAND or NOR. FIG. 5A shows a configuration including gates 33 and 34, an input 31, an output 36, a reset gate 32, and a switching atom 35.If the signals of the gates 33 and 34 are A and B, the output 36 becomes A'B '. , NOR gates. That is, the "high" signal is output to the output 36 only when the "low" signal is input to both the gates 33 and 34. Once a signal is transmitted and logic is performed, when a signal is applied to the reset gate, the logic circuit returns to the initial state and the next logic operation can be performed again. That is, the reset signal can be used as a synchronization signal.

FIG. 5 (b) shows a configuration including an input 31, gates 33 and 34, a reset gate 32, an output 36, and a switching atom 35. If the signals of the gates 33 and 34 are A and B, the output 36 is
A '+ B', and a NAND gate can be configured. That is, when a "low" signal is input to either of the gates 33 and 34, "
A "high" signal is output, or conversely, a "low" signal is output only when a "high" signal is input to both gates 33 and 34.

FIG. 5 (c) shows an example of the NOT circuit. In the configuration including the input 31 and the gates 33 and 34, if the input signals of the gates 33 and 34 are A and B, the outputs 36 and 37 are A 'and B', respectively, and can form a NOT circuit. At this time, instead of input signals A and B, inverse information, that is, A and A 'are applied to gates 33 and 34.
, The outputs become A 'and A, respectively, and can provide a major NOT circuit in the logical configuration. At this time, if the reset gate 32 is provided corresponding to the gates 33 and 34, the reset gate 32 can be used as a synchronous negation circuit synchronized with the reset signal.

FIG. 5D shows an example of the reverse information output circuit. That is, when "high" is always input to the input 31 and information A is given to the gate 33, A 'and A are output to the outputs 36 and 37, respectively. By setting the timing by the reset gate 32, the output of the reverse information can be obtained.

(Embodiment 4) This embodiment discloses a decoder circuit. FIG. 6 shows a decoder circuit in which a power supply level signal is output to an output 47 in accordance with information from the selection line in a configuration including a power supply line 41, selection lines 42, 43, 44, a reset gate 45, and switching atoms 46. With such a configuration, 2 n output lines can be selected by the n selection lines. Circuit additions such as using the outputs of the negation circuits disclosed in FIG. 5C as a selection line as a pair, and providing a reset gate corresponding to each switch are also effective for the stable operation of the circuit. With this decoder circuit,
A predetermined bit in the memory array can be selected, and a random access memory can be configured. In principle, it is possible to drive more output lines than the number of selection lines.

(Embodiment 5) This embodiment shows an example of a self-switching circuit and a memory circuit using the same. FIG. 7A shows an example of a self-switching circuit. In the configuration including the input 51, the charge storage unit 52, the switching atoms 53, the reset gate 54, and the output 55, an electric field is applied to the switching atoms 53 from the charge storage unit 52 by a signal applied to the input 51, and FIG. As shown, the switching atoms are moved and the gate is moved to "of
In such a configuration, when a reset signal is applied to the reset gate 54, the switching atoms return to the “on” state, and the data stored in the charge storage unit is output from the input 51. The self-switching circuit Output without closing the structure
If 55 is formed, the input signal will be output as it is, but the switching gate will be "off" and the next input signal will not be input during the self-switch. Thus, the self-switch can also be operated as a pulse counter.

FIG. 7C shows an example of a memory circuit using a self-switching circuit. In the configuration including the data line 61, the switching atom 62, the read, the write gates 63 and 64, the reset gate 65, and the self-switching circuit 66, the data write is performed by applying the information signal to the data line 61 while the read, write gate 63, When 64 are operated simultaneously, the information signal is stored in the self-switching circuit 66. When the information signal is "high", the switching atom 62 is simultaneously separated from the atom wire position and the self-switching circuit is turned "off". When the information signal is "low", the switching atom 62 does not move, and the self-switching circuit is "on".
Remains. At this time, when a reset signal is applied to the reset gate 65, the information is held in a state stored in the self-switching circuit 66. When reading the information stored in the self-switching circuit 66, an electric field is simultaneously applied to the read and write gates 63 and 64 to move the switching atoms and make the atomic wires of the self-switching circuit conductive. The information stored in the self-switching circuit 66 passes through the data line 61 and reaches the sense amplifier, and the reading of the information ends.

(Embodiment 5) FIG. 8 shows an example of a charge transfer circuit using a self-switching circuit. Charge transfer line 71, clock lines 72, 73, 74, switching atoms 75, clock gate 7
7, a configuration including the self-switching circuit 76 is shown. In such a configuration, the switching atom 75 of the self-switching circuit 76 is generated by the “high” signal input to the charge transfer line 71.
Becomes "off" state, and the self-switching circuit 76 becomes "high" level. When a clock signal is applied to the clock line 72,
The "high" charge stored in the self-switching circuit 76 is
It flows through the charge transfer line 71 to operate the next-stage self-switch 78. On the other hand, if it is "low", the switching atoms do not move. By repeating such an operation, it is possible to transfer charges one by one in the charge transfer circuit while switching the self-switching circuit. In this embodiment, an example of three clock lines is shown. However, if the number of clock lines is three or more, essentially stable operation is exhibited. In particular, three or four clock lines exhibit operation characteristics with a wide margin. Clock lines are used to synchronize the entire circuit at the same time. As shown in this embodiment, according to the self-switching circuit, a charge transfer circuit capable of operating at a very high speed can be realized, which can be used not only as a simple transmission line but also as a shift register of an ultra-high-speed computer, for example. .

FIG. 9 discloses an example of another charge transfer circuit. In the configuration including the charge transfer lines 81, the clock lines 83, 84, 85, and the switching atoms 82, the signal input to the charge transfer lines 81 is accumulated on the charge transfer lines 81 between the switching atoms 82, and the clock lines 83 , 84 and 85, the charge transfer cleaning is transferred one after another according to the signal applied thereto. In this way, even with only ordinary atomic switches,
A charge transfer circuit can be configured. As in the previous example, it can be used as a shift register of an ultra-high-speed computer.

(Embodiment 6) This embodiment shows a configuration of a pulse operation circuit using an atomic switch. Figure 10 shows input 91,
92, output 93, 94, reset line 95, switching atom 96,
97 is shown. In this configuration, when a "high" signal is input from 91 and 92, the switching atoms 96 and 97 are moved by an electric field, and "low" signals are output at outputs 93 and 94. If the input from 91 is A and the input from 92 is B, output
AB 'is output to 93, and "low" is always output to the output 94. As shown in this embodiment, it is possible to combine the logics or perform the pulse operation.

(Embodiment 7) This embodiment discloses a memory circuit using atomic wires.

FIG. 11 shows an example of a memory circuit using an atomic switch. The configuration includes a power supply line 111, a reset line 112, a data line 113, a reverse data line 114, a write line 120, and a read line 109. The write operation in such a memory cell is performed by the following process.
When a memory cell is selected by the write line 120 and the switching atom 116 is turned on, the switching atom 115 is output from the output line 11 according to the data input from the data lines 113 and 114.
Either 8 or 119 is set to "on", and the other is set to "off". When a reset pulse is applied to the reset line, the state returns to a state where writing cannot be performed. When reading from such a state, by setting the switching atom 117 to the output line conduction state by selecting the read line 109, the switching atom 1
Depending on the position of 15, a "high" signal is output on one of the outputs 118 and 119 and a "low" signal is output on the other. This memory cell is always supplied with a current or a pulse signal from the power supply line 111, and can always be read when the read line 109 is selected. Therefore, the memory cell shown in Embodiment 5 can be called a dynamic type, and the memory cell shown in this embodiment can be called a static type.

Embodiment 8 This embodiment discloses a method for mounting an atomic wire circuit.

FIG. 12 compares the dimensions of an atomic wire, a quantum wire, a semiconductor, a mounting substrate, and a man-machine interface. The dimensions of the atomic wire device (atomic switch), the quantum wire device, and the semiconductor device are different by about one digit each, and the dimensions of the semiconductor device and the mounting substrate are different by about four digits. The dimensions of the mounting substrate and the man-machine interface are different by about one digit, and the dimensions of the atomic wire device and the man-machine interface are different by seven digits as a whole. Therefore, according to the atomic wire device, it is possible to achieve a high density integration of four digits in a two-digit area in size compared to a circuit using a current semiconductor device.

In order to enable the human to perceive the signal of the atomic wire circuit, it is necessary to provide an interface between the atomic wire circuit and the quantum wire circuit, and to provide an interface between the quantum wire circuit and the semiconductor circuit to convert the signal. It is. The former interface is, for example, a single-electron transistor (K. Likharev, I.
BM J. Res. Develop., 32 (1) , 144 (1988).)
Devices that can operate with as many electrons as required by an atomic switch can be used. For the latter interface, it is also possible to use a semiconductor ultra-high-speed device such as HEMT having a speed corresponding to the speed of the quantum wire circuit.

An integrated circuit composed of an atomic wire circuit includes an arithmetic circuit, a memory, a peripheral logic circuit, and the like as shown in FIG. 13, and a single chip can have all functions as an information processor. This is connected to a semiconductor circuit using a quantum wire circuit as an interface as shown in FIG. 12, and used as an input / output processor of a man-machine interface as shown in FIG. It is possible to connect one atomic wire integrated circuit to a plurality of man-machine interfaces, or to connect a plurality of atomic wire integrated circuits to a single man-machine interface.

(Embodiment 9) This embodiment discloses another structure of the atomic switch.

FIGS. 14A and 14B show a plurality of switching atoms.
A state in which switching gates 123 and 124 are formed by an atomic wire composed of a plurality of atomic rows in order to switch 122 is shown. The switching gate may be formed of a plurality of atomic rows in the middle as shown at 126 and 127. FIG.
4 shows an example of an atomic wire consisting of two atomic rows, but it goes without saying that three or more atomic rows, a ring, a three-dimensional shape, or the like may be used.

FIG. 15 discloses a structure relating to switching atoms. The switching atom 132 adjusts the bias applied to the switching gate so that the switching atom 132 moves only in a portion surrounded by the region 131 where the substrate potential distribution is small and the substrate potential distribution is large. Therefore, even if a plurality of switching atoms are moved at the same time, the switching atoms are stopped at a place necessary for switching, and no malfunction occurs. For example, such a region 133 where the potential distribution is small and a region 131 where the potential distribution of the substrate is large
An example of a substrate having both of them is a method of forming a molybdenum disulfide layer on graphite.

(Embodiment 10) This embodiment discloses a voltage regulator.

FIG. 16 shows a state in which an atomic wire 141 and another atomic wire 142 opposed thereto are set at a distance 143 from each other.
The amount of current flowing from the atomic wire 142 to the atomic wire 141 is a distance 143
, The maximum voltage applied to the atomic wire 141 can be defined. For example, when the distance 143 is 0.1 nm, the maximum voltage is 10 mV, and when the distance 143 is 0.3 nm, the maximum voltage is 50 mV. If the atomic wire 142 is grounded, it can function as a voltage regulator for the atomic wire 141.

[0038]

As is clear from the above embodiments, the atomic switch circuit according to the present invention enables much higher-speed operation and higher-density mounting than the conventional circuit using the switching action of a transistor. It is possible to realize a simple memory circuit and a logic circuit, and it is also possible to realize an advanced information processing device such as an ultra-high performance computer using these circuits.

[Brief description of the drawings]

FIG. 1 is a diagram showing the principle of an atomic switch according to the present invention.

FIG. 2 is a diagram showing an example of a TTL circuit including a MOS transistor according to a conventional semiconductor technology.

FIG. 3 is a diagram showing an example of a method for creating an atomic wire.

FIG. 4 is a diagram showing an atomic switch with a reset gate.

FIG. 5 is a diagram illustrating a configuration example of a basic logic circuit such as NAND and NOR.

FIG. 6 illustrates an example of a decoder circuit.

FIGS. 7A and 7B show examples of a self-switching circuit, and FIGS. 7C and 7C show examples of a memory cell circuit using the self-switching circuit. FIGS.

FIG. 8 is a diagram showing an example of a charge transfer element circuit.

FIG. 9 is a diagram showing another example of the charge transfer element circuit.

FIG. 10 illustrates an example of a logic circuit in which a self-switching circuit is combined.

FIG. 11 illustrates an example of a memory cell circuit.

FIG. 12 is a diagram showing a dimensional comparison from an atomic wire circuit to a man-machine interface.

13 is a diagram showing an example of a system configuration using an original particulars line circuit.

FIG. 14 is a diagram showing another configuration example of the atomic switch.

FIG. 15 is a diagram showing the principle of controlling the position of a switching atom by using a solid surface potential.

FIG. 16 illustrates the principle of a voltage regulator.

[Explanation of symbols]

11: substrate scanning mechanism, 12: probe, 13: probe operation detecting mechanism, 14; substrate, 15; operating atom 1, 21,
31, 141, 142; atomic wires, 3, 22, 33,
34, 123, 126; switching gate, 2, 2
4, 35, 46, 53, 62, 75, 82, 96, 9
7, 115, 116, 117, 122, 132; switching atoms, 23, 32, 45, 54, 65, 95,
112, 124, 127; reset gate, 41, 1
11; power supply line, 42, 43, 44; selection line, 47,
118, 119; output lines, 4, 21, 31, 51, 1
01, 102, 121; input, 5, 25, 36, 3
7, 55, 93, 94, 103; output, 104, 10
5; transistors 72, 73, 74, 83, 84,
85; clock line, 63, 120; write line, 6
4, 109; readout lines, 131, 133; potential energy distribution of electrons.

──────────────────────────────────────────────────の Continued on the front page (72) Inventor Seiichi Kondo 2520 Akanuma, Hatoyama-cho, Hiki-gun, Saitama Prefecture Inside the Hitachi, Ltd.Basic Research Laboratories Co., Ltd. (56) References Patent 2827641 (JP, B2) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 29/68 H01L 27/10 451 H01L 29/06 JICST file (JOIS)

Claims (9)

(57) [Claims] 1. An atomic wire formed by arranging a plurality of atoms so that mutual electrons interact with each other at an appropriately distant position.
By moving the are two or more atoms, the mobile
According to the logical state corresponding to the combination of
Means for changing the electrical conductivity of the atomic wire so that the electrical conductivity of the atomic wire can be increased.
A logic circuit using atomic wires , characterized by having it . 2. The method according to claim 1, wherein the atomic wire is one wire between input and output.
At the appropriate distance in the wiring
Gate lines and resets that act independently on
To the gate line, facing the gate.
Claims that function as a NAND circuit for two signals
Logic circuit using atomic wires described in 1 . 3. An atomic wire is connected in parallel between an input and an output.
Each of the wires connected in parallel
Gate that acts independently on one atom in each of these wires
Set the line and reset gate to face each other, and
To function as an OR circuit of the two added signals.
2. A logic circuit according to claim 1, wherein the logic circuit comprises an atomic wire. 4. An atom is formed so that its electrons interact with each other.
It uses atomic wires formed by arranging a plurality of wires.
And multiple branches from atomic wires that function as power lines
Atomic wires that function as output lines of
Multiple elements that act as selection lines for selecting one of
For resetting the selection by the thin line and the selection line.
It consists of atomic wires that function as reset lines.
Each of the atomic wires that function as output lines for
One less than the number of multiple atomic wires that function as selection lines
A number of appropriately spaced atoms serve as the selection line.
Selectively triggered by functional atomic wires
In addition, selectively by the atomic wire functioning as the selection line
For triggered atoms, the reset line acts as the reset line.
Deco characterized by functional atomic wires facing each other
Theory using atomic wires characterized by functioning as a radar
Logic circuit. 5. The method of claim 1, wherein the electrons interact with each other.
It uses atomic wires formed by arranging a plurality of wires.
The end of the atomic wire into which the signal to be stored is
Is returned as a trigger line for one atom of the atomic wire.
At the same time as the trigger line
Function as a reset line for resetting atoms
A memory element provided with an atomic wire;
Between the atomic wire into which the signal is input and the memory element.
One atom of the fine wire selects the memory element or
Confronted set line and reset to deselect
Characterized by having a memory function controlled by wires
Logic circuit with atomic wires. 6. An atom is formed so that electrons of the atoms interact with each other.
It uses atomic wires formed by arranging a plurality of wires.
The atomic wire into which the signal to be transferred is input
At the same time, the terminal ends thereof are
Along with being a trigger line for one atom of the atomic wire,
Reset the triggered atom against the trigger line.
Atom wires that function as reset lines for
A self-switching circuit element provided with the self-switching circuit.
Switch atoms at appropriate positions in each of the path elements
Set line and reset to trigger
Line, and all switch atoms are off in the initial state
State, the self-switching circuit is closed,
The self-switching circuit to which the signal to be sent is
And hold the signal, and transfer the held signal to the next stage.
Switch source to transfer to the self-switching circuit of
Switch on, and the self-switching circuit closed.
Selectively control the set line and reset line to return
Characterized by having the function of transferring signals
Logic circuit with thin lines. 7. The method of claim 1, wherein the electrons are interacting with each other.
It uses atomic wires formed by arranging a plurality of wires.
The atomic wire into which the signal to be transferred is input
Triggers one of the atoms in the atomic wire as a switch atom
Set line and reset line
Switch atom corresponding to the input of the signal to be transferred.
One of the atom wires separated between the atoms is the atom
The set line and the reset line are connected to the thin line.
It has the function of selectively controlling and transferring signals.
Logic circuit with atomic wires as a feature. 8. The method of claim 1, wherein the electrons interact with each other.
It uses atomic wires formed by arranging a plurality of wires.
From the atomic wires that function as power lines
Function as an output line and a reverse output line
Atomic wires and the corresponding positions of the two atomic wires
Atoms are located only on one of the lines
Two atomic wires before moving between the two atomic wires
Set branch line and reset branch line for moving atoms
Data line and inverted data line connecting the two atoms
The two atoms which are appropriately separated from the atoms moving between the fine wires.
Trigger the atoms of one atomic wire and the two atomic wires
Read line, the set line, and
Trigger the atoms on the reset line and reset line.
Write line for turning on the reset line and reset line
It will be turned on by the read and write lines
Reset to turn off the moved atom
Having a memory function characterized by having
And a logic circuit using atomic wires. 9. A set line and a reset line of said atomic wires.
Atom triggered by is two adjacent atoms
A theory based on the atomic wires according to any one of claims 1 to 8.
Logic circuit.