JP3245410B2 - Pattern image forming method, film pattern forming method, chemical blanking method and electroforming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten a process and to reduce cost when a desired lithographic pattern is formed on a substrate by a novel lithographic technique not using a photomask. SOLUTION: A liquid resin is sprayed on a substrate 8 to form a desired pattern image. This pattern image is cured and the substrate 8 with the cured pattern image is immersed in an etching solution to etch the region of the substrate 8 not covered with the pattern image resin. The pattern image resin is then removed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a pattern image forming method for forming a pattern image on a thin substrate using a lithography technique and an etching technique, a film pattern forming method, a chemical blanking method, and an electroforming method.

[0002]

2. Description of the Related Art Conventionally, so-called photolithography and etching techniques have been used in semiconductor manufacturing processes, printed circuit board manufacturing, shadow mask manufacturing for TV cathode-ray tubes, and the like. Established. These technologies apply so-called photoengraving technology, in which a photosensitive photoresist is applied to a substrate, irradiated with ultraviolet light through a photomask, and then developed to form a photomask pattern. An equivalent photoresist pattern can be formed or thereafter etched to form a pattern equivalent to the photoresist on the substrate.

Therefore, an example of a lithography technique in a semiconductor manufacturing process will now be described with reference to FIGS. FIGS. 8A to 8I show a process flow in a so-called wafer process (resist process and etching process). FIGS. 9A to 9E show a pattern cross-sectional shape when a negative resist (positive resist has an exposure step opposite to that of a positive resist) formed by the process flow is used. Here, an example in which an opening of SiO ₂ is provided on a silicon wafer will be described below.

First, [wafer pre-processing step] shown in FIG.
Then, a substrate 1 (silicon wafer) having a thermal oxide film (SiO ₂ ) 2 formed on its surface at about 1 μm is cleaned by cleaning. Next, in [resist coating step] of FIG. 8B, a photoresist 3 is applied on the substrate 1 by 0.5 to 1.0 μm by spin coating (or roll coating).
m. In this case, in order to improve the adhesion between the substrate 1 and the photoresist 3, an adhesion enhancer (OA, not shown)
P etc.) are applied on the substrate 1 in advance. Next, FIG.
(C) In the [prebaking step], the solvent is evaporated at 80 to 90 ° C. to evaporate the solvent component in the applied photoresist.
In a baking oven for 10-20 minutes. Next, FIG.
(D) In the [mask alignment step] of FIG. 9A, the photomask 4 is aligned with the surface of the substrate 1 on which the photoresist 3 has been applied. The photomask 4 used here is formed by polishing a glass which is hardly affected by thermal expansion such as quartz glass or low expansion glass with high precision, and forming a desired pattern of a chromium vapor deposition film on the surface thereof. Things. Thus, the region where the chromium vapor deposition film is formed does not transmit light, and the region where the chromium vapor deposition film is not formed transmits light. Next, in [exposure step] of FIGS. 8E and 9B, after mask alignment is completed, exposure is performed by UV irradiation. Thus, irradiation or non-irradiation is performed in a region where the chromium vapor deposition film is formed and a region where chromium is not formed, so that a latent image corresponding to the chromium mask pattern is formed in the photoresist. Next, FIG.
(F) In the [development step] of FIG. 9 (c), in order to visualize the latent image in the negative resist, U
The portion of the photoresist 3 not irradiated with the V light is dissolved (however, in the case of a positive resist, the portion irradiated with the UV light is dissolved in the opposite way). Thereby, the substrate 1
A photoresist pattern 5 is formed thereon. next,
In (post-bake step) of FIG. 8 (g), the photoresist pattern 5 after development is heated in a baking furnace at 130 to 150 ° C. for 30 to 60 minutes so as to withstand the etching solution in the next etching step. And cure. Next, in the [etching step] of FIGS. 8 (h) and 9 (d), the substrate 1 is immersed in a buffer etching solution of hydrofluoric acid and ammonium fluoride, and thermal oxidation of a region exposed by the photoresist pattern 5 is performed. The film 2 is removed by etching. Next, in [resist removing step] in FIGS. 8 (i) and 9 (e), the unnecessary photoresist 3 is removed, so that a heat resist having the same shape as the photoresist pattern 5 is formed on the substrate 1. A pattern 6 made of the oxide film 2 is formed. Therefore, this pattern 6 is a desired pattern.

[0005]

In the lithography technology of the conventional semiconductor manufacturing process as described above,
8A to 8G, and FIG.
(H) and (i), in particular, the former process such as resist coating, exposure, and development has a problem that the process time is long. Further, the photomask 4 used in such a technique has a pattern formed on a glass substrate or a transparent film, and is very expensive.

[0006]

According to the first aspect of the present invention,
Placed at a position facing the substrate placed on the substrate holder
And a carriage movable on the substrate in X and Y directions.
The pattern image with injecting a liquid resin by onboard ejection head to form a desired pattern image
Means that the liquid resin dots in the vertical, horizontal,
The pattern image forming process is formed to fit Ri
Is formed, and the formed pattern image curing step of the pattern image is hard <br/> by heat, not the substrate having the cured pattern image are covered in immersion Shi pattern image resin etching solution region And a resin removing step of removing the unnecessary pattern image resin.

[0007] Therefore, since this is a novel lithography technique that does not use a photomask, it is possible to shorten the process and cost for forming a desired lithography pattern on a substrate.

[0008] The invention according to claim 2 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Formed so that the liquid resin dots in the oblique direction overlap each other
Formed by the pattern image forming step to be performed , a pattern image curing step of curing the formed pattern image by heat, and a dry etching step of performing dry etching on the pattern forming surface of the substrate having the cured pattern image, and more it becomes a pattern image forming method and a resin removing step of removing the pattern image resins that are no longer needed.

Therefore, by performing lithography by dry etching, highly accurate lithography can be realized without using a photomask.

The invention according to claim 3 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Formed so that the liquid resin dots in the oblique direction overlap each other
A pattern image forming step of curing the formed pattern image by heat, a protective film forming step of forming a protective film on the back surface of the substrate, the protective film and the pattern image resin to remove the non-covered region corroding step to corrode the uncovered region of the immersion Shi pattern image resin etching solution until the substrate bottom surface of the substrate, the pattern image resin and the protective film which has become unnecessary with and This is a chemical blanking method including a protective film removing step.

[0011] Therefore, since this is a novel chemical blanking method that does not use a photomask, the process can be shortened and the cost can be reduced.

According to a fourth aspect of the present invention, a liquid resin is sprayed on both the front and back surfaces of a substrate to form a pattern image having a mirror image relationship on the front and back surfaces, and the pattern images are formed vertically, leftward and rightward.
So that the liquid resin dots in the right and diagonal directions overlap
Formed by mirror pattern image forming process to be formed, and the pattern image curing step of curing the formed pattern images by heat, the front and back of the substrate the substrate was dipped with pattern image curing in the table backside etching solution both surfaces uncoated regions corrosion penetration step of penetrating between both sides subjected to corrosion from both sides, it is become more chemical blanking process and a resin removing step of removing the pattern image resins that are no longer needed.

Therefore, by performing etching from both sides by a novel chemical blanking method without using a photomask, not only the process can be shortened and the cost can be reduced, but also a highly accurate component can be manufactured. .

[0015] The invention according to claim 5 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Liquid resin dots in oblique directions are formed so as to overlap
A pattern image forming step of forming the pattern image by heat, curing the formed pattern image by heat, a film forming step of forming a film on a surface on which the cured pattern image is formed, and the pattern image A film pattern forming method including a film separating step of separating an upper film from the substrate.

Therefore, a new thin film pattern formation without using a photomask can shorten the process and reduce the cost. Further, since the pattern is not formed by etching, a film-like structure formed by an etchant is used. Can be prevented from being damaged.

The invention according to claim 6 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Liquid resin dots in oblique directions are formed so as to overlap
That is formed by the pattern image forming step, a pattern image curing step of curing the formed pattern image with heat, the substrate as a cathode in accordance with the presence or absence of the coating of the pattern image by plating selectively a metal on the substrate This is an electroforming method comprising: a metal deposition step of depositing metal on a substrate; and a film deposition separation step of separating a plating-deposited film-like precipitate from the substrate.

[0017] Therefore, since the method is a novel method for producing a film-like structure by electroforming without using a photomask, the process can be shortened and the cost can be reduced.

[0018]

Next, an embodiment of the present invention will be described with reference to FIGS. First, the overall configuration of the pattern image forming apparatus will be described with reference to FIG. A substrate 8 on which a pattern image is formed is provided on a substrate holding table 7 as a substrate holding means. A carriage 10 is attached to the arm 9 on the substrate holder 7, and an ejection head 11 is fixed to the carriage 10. The carriage 10 can be moved in the X and Y directions by an X direction scan motor 12 and a Y direction scan motor 13. An ejection head system control box 14 is arranged below the substrate holder 7.
This ejection head system control box 14
Injection head 11 based on the input pattern image information
A pattern image forming control means for injecting a liquid resin 23 from above to draw a resin pattern image on the substrate 8. A liquid resin supply tube 15 is provided between the ejection head system control box 14 and the ejection head 11,
The signal supply cable 16 is connected. Further, the ejection head system control box 14 is connected via a control box 17 to a computer 18 as pattern image information input means.

FIG. 2 shows the configuration of the ejection head 11. The ejection head 11 has a nozzle 19 as an ejection port and a liquid chamber 2 as a flow path communicating with the nozzle 19.
0, an energy acting part 21 formed in a part of the liquid chamber 20 to change the internal volume, and a tank 24 as a liquid resin supply means for supplying a liquid resin 23 to the liquid chamber 20 via a resin supply path 22. It consists of The energy application section 21 includes a metal diaphragm 21a formed on the rear surface of the liquid chamber 20, and a piezoelectric element (piezoelectric crystal) 21b bonded to the metal diaphragm 21a. As a material of the liquid resin 23, a photosensitive resist is used.

When an appropriate voltage impulse is applied by using such an ejection head 11, the piezoelectric element 21b is driven and a bending moment acts on the metal diaphragm 21a to be deformed, so that the volume in the liquid chamber 20 is reduced. The pressure in the room rises, whereby the liquid resin 23 blows out from the nozzle 19 to the outside. In this case, the speed of the liquid resin 23 in the liquid chamber 20 is about 10 m / s, and it is preferable that the applied voltage impulse decrease to zero relatively slowly. Although the diameter of the nozzle 19 depends on the fineness of the pattern to be formed, a diameter of about φ10 to 100 μm is usually used. The viscosity of the photosensitive resist used for the liquid resin 23 is several cp, which is set to be lower than the viscosity in general spin coating.

Using the pattern image forming apparatus configured as described above, an image pattern is formed on the substrate 8 according to, for example, a process described below. First, a desired image pattern is designed using the computer 18 and making full use of computer graphics. Second, the substrate 8 is pre-processed (washed) and dried, and then set on the substrate holding table 7. Third, the ejection head 11 is activated, and is moved in the X and Y directions while ejecting the liquid resin 23 from the ejection head 11 onto the substrate 8 in accordance with the pattern of the computer graphics to form a resist pattern. Fourth, post baking is performed. Fifth, an etching process on the substrate 8 is performed. Sixth, a resist process is performed (the etching process and the resist process will be described in detail later). By such a series of processes, a lithography of a pattern designed by computer graphics on the substrate 8 is completed.

Further, the ejection head system control box 14 in the present apparatus is provided with dot ejection control means in addition to the above-described pattern image formation control means. The dot-imprinting control means forms a pattern image drawn on the substrate 8 by dots, and prints dots so as to overlap with each other so as not to form an image area between these vertically, horizontally, and diagonally adjacent dots. Operation processing. Therefore, a specific operation example of the dot ejection control means will now be described with reference to FIGS. First, when forming the pattern area 25 of a rectangular resin as shown in (a), if the method of forming the dot pattern 26 as shown in (b) is performed, an uncovered area is formed in an oblique direction. There is a problem that the region is etched away in a later etching step. For this reason, as shown in (c), the dot pattern 27 is formed so that the dots in the up, down, left, right, and oblique directions overlap.
You need to type By performing such processing, the pattern region 25 is completely covered with the resin,
It can sufficiently fulfill the function as an etching resistant mask.

Next, another example of the structure of the above-described ejection head 11 will be described with reference to FIG. Injection head 11 here
Is known as an ink-jet apparatus called a charge control type or a continuous flow type.
3 can be used to form a desired resin pattern. That is, as shown in FIG. 3, the liquid resin 23 injected by the vibration of the electrostrictive vibrator 28 passes through the charging electrode 29, is deflected by the deflection electrode 30, and is irradiated on the surface of the substrate 8. Is done. Further, the liquid resin 23 is collected in the liquid resin tank 31 and the pressure pump 32
Is sent again to the ejection head 11 and circulated. Although the liquid resin 23 is a charged particle, specifically, conductivity can be imparted by adding 5 to 10% of polyaniline. In this case, the difference from the ejection head 11 shown in FIG. 2 is that since ejection is performed using a pressure pump, the frequency of drop formation is high and high-speed pattern formation can be performed. In addition, the flying speed of the jet drop is high (1
5 to 20 m / s), stable drop injection can be performed.

The liquid resin 23 is not limited to a photosensitive resist, but may be any other material that is cured by light or heat, for example, a UV-curable epoxy adhesive,
A material having a low viscosity of several cp of a methacrylic acid resin containing a V-curing reaction initiator or a material made of a polymer acrylic solution which is heated by injection and cured after pattern formation, or the like can be used. In this case, when the liquid resin 23 reacts to light, the resin supply path 22 needs to block light from the outside. Therefore, the resin supply path 2
2 is made of an opaque material, a yellow transparent tube that is not exposed to photoresist or the like, or the entire injection system is installed in a yellow room for safety light that is not exposed.

In this embodiment, the process of actually forming an image pattern using the above-described pattern image forming apparatus shown in FIG. 1 has been described. That is, first, the liquid resin 23 is sprayed onto the substrate 8 in a pattern image forming step to form a desired pattern image, the formed pattern image is cured in a pattern image curing step, and the cured pattern image is cured in an uncoated area corrosion step. The substrate 8 having the formed pattern image is immersed in an etching solution to corrode an area not covered with the liquid resin 23, and the liquid resin 23 unnecessary in the liquid resin removing step is removed. Corresponding to the invention). Further, in addition to such a series of steps, various series of steps described below were provided.

The liquid resin 23 is sprayed onto the substrate 8 in a pattern image forming step to form a desired pattern image, the formed pattern image is cured in a pattern image curing step, and the cured pattern is dried in a dry etching step. The pattern forming surface of the substrate 8 having an image is dry-etched to remove the liquid resin 23 that is no longer required in the liquid resin removing step (corresponding to the second aspect of the present invention).

In a pattern image forming step, a desired pattern is formed by spraying the liquid resin 23 on one side of the thin substrate 8.
The formed pattern image is cured by the pattern image curing step, a protective film is formed on the back surface of the substrate 8 by the protective film forming step, and the substrate 8 having the protective film and the pattern image is etched by the uncoated area corrosion step. The area not covered with the liquid resin 23 is corroded to the bottom surface of the substrate to remove the liquid resin 23 and the protective film which are no longer required in the liquid resin protective film removing step. Corresponding).

In the mirror image pattern image forming step, the liquid resin 23 is sprayed on the front and back surfaces of the thin substrate 8 to form a mirror image pattern image on the front and back surfaces, and the formed pattern image is cured in the pattern image curing step. A substrate 8 having a pattern image hardened on its front and back surfaces by a double-sided uncoated area corrosion penetration step is immersed in an etching solution, and the front and back surfaces of the substrate 8 are corroded to penetrate between both surfaces;
The liquid resin 23 that has become unnecessary in the liquid resin removing step is removed (corresponding to the invention according to claim 4).

In the pattern image forming step, the liquid resin 23 is sprayed onto the substrate 8 to form a desired pattern image, and the formed pattern image is cured in the pattern image curing step, and the cured pattern is formed in the thin film forming step. A thin film is formed on the surface on which the image is formed, and the thin film on the pattern image is removed by a thin film removing step (corresponding to the invention of claim 5).

The liquid resin 23 is sprayed onto the substrate 8 in a pattern image forming step to form a desired pattern image, and the formed pattern image is cured in a pattern image curing step, and the substrate 8 is used as a cathode in a metal deposition step. A metal is selectively deposited on the substrate 8 by plating depending on whether or not the pattern image is covered, and the film-like precipitate deposited by the film-like precipitate separation step is separated from the substrate 8 (claims). 6).

Therefore, a description will be given below of an example of a characteristic process in the image pattern forming process based on the above-described series of various processes. First, as a first specific example, an etching method after forming a resin pattern is shown in FIG.
This will be described based on (a) to (c). (A), after forming the resin pattern 33 on the substrate 8, baking is performed,
The step of curing the resin pattern 33 is shown.
Note that a protective film 34 is provided on the back surface of the substrate 8 to prevent erosion by etching performed later. As this protective film 34, the same resin as that used for pattern formation can be used. Next, (b)
Is to etch the substrate 8 having the resin pattern 33 with the etching solution 3
5 shows a step of immersing the substrate in the substrate and performing etching. The etching solution 35 varies depending on the material to be removed by etching. For example, a buffer etching solution of hydrofluoric acid and ammonium fluoride is used to remove SiO2, and phosphoric acid is used to remove Al. When the substrate 8 is made of copper or a wiring pattern of a printed circuit board is formed (copper pattern), an aqueous ferric chloride solution or the like is used. Here, an example of wet chemical etching is shown as the etching, but plasma dry etching can also be used effectively depending on the material to be removed. As an example, Ta2N or Ta formed as a thin film on a Si wafer by sputtering or the like can be removed by plasma dry etching with high precision without undercut and in a short time (several tens of seconds to several minutes). The formation takes place. Next, (c) shows a step in which the etching is completed, the unnecessary resin pattern 33 and the protective film 34 are removed, and the lithography is completed. As a result, it is possible to form a concavo-convex pattern on the substrate 8 according to the pattern produced by computer graphics.

In this specific example, the case where the amount to be removed by etching is reduced and a pattern of irregularities is formed on the surface of the substrate 8 has been described. In addition to this, the etching time is extended and the etching is performed to the bottom of the substrate 8. By proceeding, the region without the resin pattern 33 penetrates to the bottom, and a method called chemical blanking (chemical blanking) can be provided. When this embodiment is applied to the chemical blanking, a pattern having a desired shape is formed by computer graphics, a resin pattern 33 is drawn on the substrate 8, and thereafter, a component having a complicated shape is easily formed by etching. It can be easily manufactured without using a photomask.
Further, since it is manufactured not by a mechanical method but by a chemical corrosion method, processing, distortion, deformation of the part does not occur, and a high-precision part can be manufactured at low cost.

Next, as a second specific example, the above-described chemical blanking, that is, a resin pattern 33 is formed on both the front and back surfaces of the substrate 8 so as to have a mirror image relationship with each other, and etching is performed simultaneously from both surfaces. Method 6
A description will be given based on (a) to (c). First, (a)
The figure shows a process in which a resin pattern 33 is formed on both the front and back surfaces of the substrate 8 and then baking is performed to cure the resin pattern 33. Next, (b) shows a process in which an etching solution 38 is sprayed from both surfaces of the substrate 8 on which the resin pattern 33 is formed from a spray nozzle 37 of a spray etching device 36 to perform etching. next,
(C) shows the resin removing agent 39 after the etching is completed.
(For example, when a photoresist is used as a resin material, there is a dedicated stripper.) This shows a process in which unnecessary resin is removed and component fabrication is completed. In this way, the method of performing chemical blanking by etching from both sides of the substrate 8 can produce a component with higher precision than the method of performing etching from one side, and uses a relatively thick substrate 8. Therefore, it is possible to manufacture a component having high strength.

Next, as a third specific example, a method of forming a pattern by forming a resin pattern 33 on a substrate 8 and then depositing a metal on the substrate 8 by plating is shown in FIG.
A description will be given based on (a) to (c). First, (a)
A step of baking after forming the resin pattern 33 on the substrate 8 and curing the resin pattern 33 is shown. Next, (b) shows the case where the substrate 8 is used as a cathode and the Ni plate 4
1 as an anode in a Ni plating solution 40,
The step of depositing Ni plating (precipitated metal) 42 in a region where the resin pattern 33 does not exist is shown. In this case, as the plating solution, sulfamic acid, a nickel bath, or the like can be used. After the Ni plating 42 is thus deposited, the resin pattern 33 is removed with a removing agent, whereby a desired pattern by Ni plating can be formed on the substrate 8. As another method, as shown in (c), after the Ni plating 42 is deposited,
It is also possible to peel off the deposited Ni plating 42 from the substrate 8 to produce a desired component.

The methods (a) to (c) are methods for forming a pattern using Ni plating 42. As another example, a resin pattern 33 is formed using a Si wafer as the substrate 8 and cured. After that, Al is deposited by sputtering or vapor deposition, and thereafter, by removing only the resin pattern 33, a desired A is formed on the Si wafer.
1 pattern can be formed. Such a patterning method can be applied to form a good electrode pattern.

As described above, the liquid resin 23 is directly placed on the substrate 8 based on the image information of computer graphics.
Spraying and pattern formation, it is possible to shorten the process and reduce the production cost compared to the so-called photolithography in which exposure and development are performed using an expensive photomask as before. it can. Further, since the ejection head 11 ejects the liquid resin 23 in a non-contact state with respect to the substrate 8 to form a pattern, a highly accurate pattern can be easily formed. As a material of the liquid resin 23, a photosensitive resist widely used in the field of a printed circuit board or the like is used, so that the liquid resin 23 can be easily obtained at a low cost. further,
Curing after pattern formation by spraying can also be easily cured by irradiation with UV light or the like.

Since the present etching method is a novel lithography technique and a chemical blanking method that does not use a photomask, the process for forming a desired lithography pattern on the substrate 8 can be shortened and the production cost can be reduced. And a highly accurate pattern can be formed.

[0038]

[Effect of the Invention] The invention of claim 1 wherein is on the substrate holder
A jet mounted on a carriage movable in the X and Y directions is disposed on the substrate at a position facing the mounted substrate.
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Formed so that the liquid resin dots in the oblique direction overlap each other
Formed by the pattern image forming process to be, and the pattern image curing step of curing the formed pattern image with heat, have a substrate having the cured pattern image are covered in immersion Shi pattern image resin etching solution Since it is a pattern image forming method including a non-covered area corrosion step of corroding an unoccupied area and a resin removing step of removing the unnecessary pattern image resin, it is a novel lithography technique that does not use a photomask. This has an effect that a process for forming a desired lithography pattern on a substrate can be shortened and cost can be reduced.

The invention according to claim 2 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Formed so that the liquid resin dots in the oblique direction overlap each other
Formed by the pattern image forming step to be performed , a pattern image curing step of curing the formed pattern image by heat, and a dry etching step of performing dry etching on the pattern forming surface of the substrate having the cured pattern image, since more it becomes a pattern image forming method and a resin removing step of removing the pattern image resin becomes unnecessary, by which the lithography is performed by dry etching, realized with high precision lithography without using a photomask This has the effect that it becomes possible to

The invention according to claim 3 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Formed so that the liquid resin dots in the oblique direction overlap each other
A pattern image forming step of curing the formed pattern image by heat, a protective film forming step of forming a protective film on the back surface of the substrate, the protective film and the pattern image resin to remove the non-covered region corroding step to corrode the uncovered region of the immersion Shi pattern image resin etching solution until the substrate bottom surface of the substrate, the pattern image resin and the protective film which has become unnecessary with and Since this is a novel chemical blanking method that does not use a photomask because it includes a protective film removing step, there is an effect that the process can be shortened and the cost can be reduced.

The invention according to claim 4, wherein the pattern image to form a pattern image by ejecting a liquid resin on both sides of the substrate becomes a mirror image relationship at their front and rear surfaces are vertical, left
So that the liquid resin dots in the right and diagonal directions overlap
Formed by mirror pattern image forming process to be formed, and the pattern image curing step of curing the formed pattern images by heat, the front and back of the substrate the substrate was dipped with pattern image curing in the table backside etching solution It consists of a two-sided uncoated area corrosion penetration step of corroding from both sides and penetrating between both sides, and a resin removal step of removing the unnecessary pattern image resin, so that a new chemical blanking method without using a photomask By performing the etching from both sides, not only the process can be shortened and the cost can be reduced, but also it is possible to produce a highly accurate part.

The invention according to claim 5 is provided on a substrate holding table.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Liquid resin dots in oblique directions are formed so as to overlap
A pattern image forming step of forming the pattern image by heat, curing the formed pattern image by heat, a film forming step of forming a film on a surface on which the cured pattern image is formed, and the pattern image Since the method is a film pattern forming method including a film separating step of separating an upper film from the substrate, a new thin film pattern is formed without using a photomask.
Since the cost can be reduced and the pattern is not formed by etching, there is an effect that the film-like structure formed by the etchant can be prevented from being damaged.

The invention according to claim 6 is provided on a substrate holder.
A nozzle mounted on a carriage movable in the X and Y directions on the substrate,
The liquid resin is ejected by the injection head to form a desired pattern image, and the pattern image is vertically, horizontally,
Liquid resin dots in oblique directions are formed so as to overlap
That is formed by the pattern image forming step, a pattern image curing step of curing the formed pattern image with heat, the substrate as a cathode in accordance with the presence or absence of the coating of the pattern image by plating selectively a metal on the substrate A metal deposition step of depositing on a substrate, and a film deposition separation step of separating a plating-deposited film-like precipitate from the substrate. Because it is a structure manufacturing method, process shortening,
This has the effect of enabling cost reduction.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating an overall configuration of a pattern image forming apparatus according to an embodiment of the present invention.

FIG. 2 is a vertical sectional side view showing a structural example of an ejection head.

FIG. 3 is a schematic view illustrating a method for forming a resin pattern.

FIG. 4 is an exploded perspective view showing another structural example of the ejection head.

FIG. 5 is a process diagram showing a first specific example of performing an etching process after forming a resin pattern.

FIG. 6 is a process diagram showing a second specific example of performing an etching process after forming a resin pattern.

FIG. 7 is a process chart showing a third specific example of performing an etching process after forming a resin pattern.

FIG. 8 is a process diagram showing a state of a conventional etching process.

FIG. 9 is a process diagram showing an etching process for a negative resist.

[Explanation of symbols]

 8 Substrate

──────────────────────────────────────────────────の Continuation of front page (51) Int.Cl. ⁷ Identification code FI G03F 1/00 B41J 3/04 7/40 521 B41M 5/26 S (56) References JP-A-56-113456 (JP, A JP-A-63-102936 (JP, A) JP-A-64-3650 (JP, A) JP-A-63-109052 (JP, A) JP-A-61-58792 (JP, A) 11445 (JP, A) JP-A-58-142339 (JP, A) JP-A-55-100558 (JP, A) JP-A-4-35946 (JP, A) JP-A-55-100557 (JP, A) (58) Field surveyed (Int.Cl. ⁷ , DB name) G03F 7/38 B41C 1/10 B41J 2/49 B41M 5/26 C25D 5/00 G03F 1/00 G03F 7/40

Claims (6)

(57) [Claims] A first substrate facing the substrate placed on the substrate holder;
And can be moved in the X and Y directions on the substrate
The with injecting a liquid resin by ejecting head mounted on the ability carriage, to form a desired pattern image
The pattern image is the liquid resin in the vertical, horizontal, and diagonal directions.
Formed by the pattern image forming step is formed so as dots overlap, the formed pattern image
A pattern image curing step of curing by heat, and immersing the substrate having the cured pattern image in an etching solution.
Uncoated region corroding step and, the pattern image forming method characterized by comprising further a resin removal step of removing the pattern image resins that are no longer required to corrode the areas not covered in the pattern image resin. 2. The method according to claim 1, wherein the substrate is opposed to a substrate set on a substrate holding table.
And can be moved in the X and Y directions on the substrate
The with injecting a liquid resin by ejecting head mounted on the ability carriage, to form a desired pattern image
The pattern image is the liquid resin in the vertical, horizontal, and diagonal directions.
Formed by the pattern image forming step is formed so as dots overlap, the formed pattern image
A pattern image curing step of curing by heat, the more the dry etching step of performing dry etching, a resin removal step of removing the pattern image resins that are no longer required in the pattern forming surface of the substrate having the cured pattern image A pattern image forming method, characterized in that: 3. A substrate facing a substrate set on a substrate holding table.
And can be moved in the X and Y directions on the substrate
The with injecting a liquid resin by ejecting head mounted on the ability carriage, to form a desired pattern image
The pattern image is the liquid resin in the vertical, horizontal, and diagonal directions.
Formed by the pattern image forming step is formed so as dots overlap, the formed pattern image
A pattern image curing step of curing by heat, the protective film forming step of forming a protective film on the back surface of the substrate, has a substrate having the protective film and the pattern image are covered in immersion Shi pattern image resin etching solution A chemical blanking method comprising: an uncovered area corrosion step of corroding an unoccupied area down to the bottom surface of the substrate; and a resin and protective film removing step of removing the unnecessary pattern image resin and the protective film. 4. The liquid resin injected into both sides of the substrate to form a pattern image as a mirror image relationship at their front and rear surfaces DOO
In addition, the pattern image is formed of the liquid in the vertical, horizontal, and oblique directions.
Formed by mirror pattern image forming process Jo resin dots are formed so as to overlap, and the pattern image curing step of curing the formed pattern <br/> over down image by heat and cured to the front and back surface patterns A substrate having an image is immersed in an etching solution, is corroded from the front and back surfaces of the substrate, and is penetrated between the two surfaces to penetrate between both surfaces;
Chemical blanking process characterized by comprising further a resin removal step of removing the pattern image resins that are no longer needed. 5. A substrate facing a substrate set on a substrate holding table.
And can be moved in the X and Y directions on the substrate
The with injecting a liquid resin by ejecting head mounted on the ability carriage, to form a desired pattern image
The pattern image is displayed on the liquid resin
Pattern image forming process bets are formed so as to overlap
Formed by the heat and heats the formed pattern image
Thus , a pattern image curing step of curing, a film forming step of forming a film on the surface on which the cured pattern image is formed, and a film separation step of separating a film on the pattern image from the substrate. Characteristic film pattern forming method. 6. A substrate facing a substrate set on a substrate holding table.
And can be moved in the X and Y directions on the substrate
The with injecting a liquid resin by ejecting head mounted on the ability carriage, to form a desired pattern image
The pattern image is displayed on the liquid resin
Pattern image forming process bets are formed so as to overlap
Formed by the heat and heats the formed pattern image
Therefore , a pattern image curing step of curing, a metal deposition step of selectively depositing a metal on the substrate according to the presence or absence of the pattern image by plating using the substrate as a cathode, and plating and depositing a film-like deposit. An electroforming method, comprising a step of separating a film-like precipitate from the substrate.