JP3232031B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device including a differential amplifier circuit whose characteristics are determined by the ratio of the resistance values of two resistors.
Body device manufacturing method, comparator circuit and constant current
The present invention relates to a method for manufacturing a semiconductor device constituting each of the voltage circuits .

[0002]

2. Description of the Related Art As a semiconductor device of this type, there are a differential amplifier circuit, a comparator circuit and a constant voltage circuit, all of which have characteristics determined by the ratio of the resistance values of two resistors.

FIGS. 6 (a) and 6 (b) are a plan view and a cross-sectional view illustrating a normally used low-resistance resistor.
As is clear from FIGS. 6A and 6B, a low-resistance resistor 101 is formed by forming an N ⁺ diffusion layer 103 on a P ⁺ substrate 102 and stacking an N-type epitaxial layer 104 on this. A diffusion layer formed by diffusing a P-type impurity is formed on the N-type epitaxial layer 104, and this is used as a resistance layer 105. The low-resistance resistor 101 is connected to each terminal 101a and a line portion 10 between these terminals 101a.
1b, and the resistance of the resistor 101 is determined by the width and length of the line portion 101b.

FIGS. 7 (a) and 7 (b) are a plan view and a cross-sectional view illustrating a normally used high-resistance resistor. The high-resistance resistor 111 is formed by forming an N ⁺ diffusion layer 113 on a P ⁺ substrate 112, stacking an N-type epitaxial layer 114 thereon,
4, a resistance layer 115 formed by implanting a P ⁺ impurity is formed. The high-resistance resistor 111 has terminals 111a and a line portion 111b, and the resistance value is determined by the width and length of the line portion 111b.

[0005] A differential amplifier circuit using the high-resistivity resistor 111 of FIG. 7 has, for example, a configuration as shown in FIG. Here, inverting amplification is performed, and 1 is input to the negative input terminal 121.
Zero resistors 111-1 are connected in parallel, and the negative input terminal 12
The resistor 111-2 is inserted between the output terminal 1 and the output terminal 122.
Each resistor 111-1 has a resistance value of 4KΩ, and the resistance value of a parallel circuit composed of these resistors 111-1 is 400Ω. Further, the resistor 111-2 has a resistance value of 100 KΩ.

In this differential amplifier circuit, the input voltage Vin
Is applied to the transistor Q1 via each resistor 111-1 and the negative input terminal 122, and the current Ic1 flows. When the input voltage Vin becomes higher than a predetermined reference voltage Vref, the current Ic1 increases more than the current Ic2 flowing through the transistor Q2. At this time, the current Ic5, which is the same as the current Ic1, flows through the transistor Q5 by the action of the current mirror circuit including the transistors Q3 and Q5. Further, since a current mirror circuit is formed by the transistors Q7 and Q8, when the current Ic5 flows through the transistor Q7, a state where an equivalent current can flow through the transistor Q8 is established. On the other hand, the current Ic6, which is the same as the current Ic2, flows through the transistor Q6 by the action of the current mirror circuit including the transistors Q4 and Q6. The current Ic5> the current Ic2, and the small current Ic is supplied to the transistor Q8 through which the large current Ic5 can flow.
In the state where 2 flows, the voltage drop at the transistor Q8 decreases, and the output voltage Vout decreases. Therefore, the voltage V of the negative input terminal 121 is output via the resistor 111-2.
Feedback is given to lower a. As a result,
The control is performed so that the input voltage Va becomes equal to the reference voltage Vref.

Here, assuming that the resistance value of the parallel circuit composed of the ten resistors 111-1 is Riba and the current from the negative input terminal 121 is I1, (Vin-Va) / Riba = I1.

The current flowing through the resistor 111-2 is represented by I2
When the base current of the transistor Q1 is ignored, I1 = I2.

Therefore, the resistance value of the resistor 111-2 is set to Rib
Assuming b, the output voltage Vout can be derived as follows. Vout = Va-Ribb x I2 = Va-Ribb x (Vin-Va) / Riba =-Ribb / Riba (Vin-Va) + Va =-Ribb / Riba (Vin-Vref) + Vref (1) According to this, this differential amplifier circuit is Ribb /
It has Riba amplification rate and performs inversion amplification.

In the differential amplifier circuit having such a configuration,
As is clear from the above equation (1), in order to improve the accuracy of the amplification factor, it is necessary to improve the accuracy of the ratio between the resistance values Riba and Ribb. Therefore, each of the resistors 111-1 and 111
-2, only resistors of the same kind, that is, resistors by ion implantation shown in FIG. 7 are used.
111-2 is manufactured by the same process. Further, in order to obtain a relatively low resistance value Riba with high accuracy, ten resistors 111-1 are connected in parallel.

However, when ten resistors 111-1 are connected in parallel, there is a problem that the space becomes large.

On the other hand, when 400 Ω is realized by one resistor, if the sheet resistance is 2 KΩ / □, the width and length of the line portion 111b shown in FIG.
m and 2 μm, the dimensions of the resistors are too small, and they are not suitable for use in view of manufacturing accuracy.

Next, a comparator circuit using the low-resistance resistor 101 shown in FIG. 6 has, for example, a configuration as shown in FIG. Here, a resistor 101-1 is applied to determine the magnitude of the current Ie3 corresponding to the input voltage Vin.
A resistor 101-2 is applied to determine the current Ic1 to be compared with e3. The resistance value of the resistor 101-1 is 1 KΩ,
The resistance value of the resistor 101-2 is 20.5 KΩ.

In this comparator circuit, when the input voltage Vin is applied to the transistor Q3, a current Ie3 flows. At this time, if the base-emitter voltages of the transistors Q3 and Q4 are Vbe3 and Vbe4, and the resistance value of the resistor 101-1 is Rb2, (Vin-Vbe3-Vbe4) / Rb2 = Ie3.

Since a current mirror circuit is formed by the transistors Q4 and Q5, the current Ie3 is supplied to the transistor Q4.
Flows, an equivalent current can flow through the transistor Q5.

On the other hand, since a current mirror circuit is formed by the transistors Q1 and Q2, when the current Ic1 flows through the transistor Q1, the current Ic is equivalent to the transistor Q2.
2 flows. Therefore, the power supply voltage is set to Vcc, the base-emitter voltage of the transistor Q1 is set to Vbe1, and the resistor 10
If the resistance value of 1-2 is Rb1, then Ic1 = Ic2 = (Vcc-Vbe1) / Rb1.

When the current Ie3> the current Ic2, the small current Ic2 is supplied to the transistor Q5 through which the large current Ie3 can flow.
Flows, the voltage drop at the transistor Q5 becomes small, and the output voltage Vout becomes low level. Also,
When the current Ie3 <the current Ic2, the large current Ic2 flows through the transistor Q5 through which the small current Ie3 can flow, so that the voltage drop at the transistor Q5 increases.
The output voltage Vout becomes high level.

That is, if the input voltage Vin is higher than a predetermined threshold voltage Vth, the output voltage Vout goes low, and the input voltage Vin goes low.
If it is smaller, the output voltage Vout becomes a high level.

Alternatively, when the input voltage Vin is equal to the threshold voltage V
If equal to th, then Vin = Vth and Ie3 = Ic2. Assuming that the base-emitter voltages Vbe of the respective transistors are equal to each other, (Vth−2Vbe) / Rb2 = (Vcc−Vbe) / Rb1 Vth = (Vcc−Vbe) Rb2 / Rb1 + 2Vbe (2)

As is apparent from the above equation (2), in order to improve the accuracy of the threshold voltage Vth, each of the resistance values Rb1, Rb2
It is necessary to improve the accuracy of the ratio. Therefore, only the resistors of the same type shown in FIG. 6 are used as the resistors 101-1 and 101-2, and the resistors 101-1 and 101-2 are manufactured in the same process, and the size and the resistivity of the resistors are determined. The accuracy of the ratio of each of the resistance values Rb1 and Rb2 is improved with uniformity.

However, the resistance value Rb2 of the resistor 101-2
Is 20.5KΩ, the sheet resistance is 200Ω /
If □, the width and length of the line portion 101b shown in FIG. 6 were 10 μm and 1025 μm, and the size of the resistor was too large.

When the high-resistance resistor 111 shown in FIG. 7 is applied as the 20.5 KΩ resistor 101-2, the length of this resistor can be suppressed to 102.5 μm, but the other 1KΩ resistor 101-2 is used. Since the length of the resistor 101-1 was reduced to about 5 μm, the size of the resistor was too small.

Next, the constant voltage circuit using the low-resistance resistor 101 shown in FIG. 6 has, for example, a configuration as shown in FIG. Here, a resistor 101-3 is applied to determine the value of the bandgap type constant current Ie5, and a resistor 101-4 is applied to convert the current Ie5 to a voltage. The resistance value of the resistor 101-3 is 360Ω and the resistance value of the resistor 101-4 is 40KΩ.

When the power supply voltage Vcc is turned on, a base current flows to the transistor Q4 through the starting resistor Rib,
The transistor Q4 turns on, the current Ic1 flows, and the transistors Q1, Q2, Q3 turn on. Then, the current Ic2 flows into the transistor Q5, and this circuit is activated.

Since each transistor Q1, Q2, Q3 forms a current mirror circuit, each current Ic1, Ic2, Ic
c3 becomes equal to each other. Ic1 = Ic2 = Ic3 (3) The area ratio of the emitters of the transistors Q4 and Q5 is set to 2: 1. Therefore, each transistor Q
4, the difference between the base-emitter voltages Vbe4 and Vbe5 of Q5 is expressed by the following equation. Vbe4−Vbe5 = kT / q × ln2 = 18 mV, where k is the Boltzmann constant, T is the absolute temperature, and q is the charge amount.

Since the voltage of this difference is applied to the resistor 101-3, assuming that the resistance value of the resistor 101-3 is Rb1, the current I
e5 is represented by the following equation. Ie5 = (kT / q × ln2) / Rb1 = 18/360 = 5
0 μA Base-emitter voltage Vbe4 of each transistor Q4, Q5
The difference between Vbe5 is called an energy bandgap reference, and the current Ie5 is called a bandgap-type constant current.

If the base current of the transistor Q5 is ignored, Ie5 = Ic2 = Ic3.

Therefore, the output voltage Vs is equal to the resistance 101-
Assuming that the resistance value of 4 is Rb2, it is expressed by the following equation. Vs = Rb2.times.Ic3 = Rb2.times.Ie5 = (kT / q.times.ln2) .times.Rb2 / Rb1 (4) As is apparent from the above equation (4), to improve the accuracy of the output voltage Vs, it It is necessary to improve the accuracy of the ratio of the values Rb1 and Rb2. Therefore, each of the resistors 101-3, 101
As -4, only the resistors of the same type shown in FIG. 6 are used to improve the accuracy of the ratio between the respective resistance values Rb1 and Rb2.

Here, the temperature characteristic of each of the resistors 101-3 and 101-4 is +2500 ppm / ° C., and (kT / q × ln
Since the temperature characteristic of 2) is +3300 ppm / ° C., the temperature characteristic of the component of (kT / q × ln 2) / Rb 1 in the above equation (4) is +800 ppm / ° C. (= 3300 ppm / ° C.)
−2500 ppm / ° C.), and +
800 ppm and +2 for Rb2 in the above equation (4)
The sum of 500 ppm / ° C., that is, +3300 ppm / ° C. becomes the temperature characteristic of the output voltage Vs. This temperature characteristic was large for a constant voltage circuit, and was not preferable.

[0030]

As described above, in the conventional differential amplifier circuit, only the same type of resistor is used as each of the resistors 111-1 and 111-2 in order to improve the accuracy of the amplification factor. However, since a plurality of resistors are connected in parallel in order to obtain a resistor having a lower resistance value with high accuracy, there is a problem that the space becomes large.

In the above conventional comparator circuit,
In order to improve the accuracy of the threshold voltage Vth, each resistor 1
Although only the same type of resistor was used as 01-1 and 101-2, the dimension of the resistor having the higher resistance value was too large.

Further, in the above-mentioned conventional constant voltage circuit, in order to improve the accuracy of the output voltage Vs, each resistor 101-3, 1
Although only the same type of resistor was used in No. 01-4, the temperature characteristics of the output voltage Vs could not be adjusted to be small because the temperature characteristics of these resistors were the same.

Therefore, the present invention is to solve the above-mentioned conventional problem, and can solve the problem caused by using only the same type of resistor. Another object of the present invention is to provide a method for manufacturing a semiconductor device.

[0034]

In order to solve the above-mentioned conventional problems, a method of manufacturing a semiconductor device according to the present invention comprises the steps of: connecting a low-resistance resistor to a negative input terminal; is connected the high resistivity of the resistance during the manufacturing of a semiconductor device including a differential amplifier circuit having an amplification factor of the determined by the ratio of the resistance value of the high resistance of the resistance and the low resistivity of the resistor In the method, a low-concentration ion implantation is simultaneously performed on each of the regions where the low-resistivity resistor and the high-resistivity resistor are formed, and then a part of the region where the high-resistivity resistor is formed is covered. Cover and cover
Area where the high-resistivity resistor is not covered
Simultaneously performing high-concentration ion implantation on the region where the low-concentration ions are implanted in the region and the region where the low-resistivity resistor is formed, to form the low-resistivity resistor and the high-resistivity resistor. It is characterized by.

Further, a method of manufacturing a semiconductor device according to the present invention
Construct a comparator circuit that includes a low-resistivity resistor that determines a ratio of converting an input voltage change to a current change, and a high-resistivity resistor that determines a constant current value to be compared with the converted current. In the method of manufacturing a semiconductor device, after simultaneously performing low-concentration ion implantation on each of the regions where the low-resistivity resistor and the high-resistivity resistor are formed, the region where the high-resistivity resistor is formed is formed. Partly covered by a cover, in front of the part not covered by the cover
The region where the high-resistance resistor is formed and the low-resistance resistor
The high-concentration ion implantation is performed simultaneously on the region where the low-concentration ions are implanted with the region where the resistance is formed, thereby forming the low-resistance resistor and the high-resistance resistor.

[0036] In the method of the present invention,
The method of manufacturing a semiconductor device comprising a constant voltage circuit including a high resistivity resistor for determining a value of a band gap type constant current and a low resistivity resistor for converting the constant current into a voltage, wherein the low resistivity And then simultaneously performing low-concentration ion implantation on each of the regions where the high-resistivity resistors are formed, and then covering a part of the region where the high-resistivity resistors are formed with a cover. Not
A region where the high-resistivity resistor is formed and the low-resistance portion.
By simultaneously performing high concentration ion implantation on the region where the low concentration ions are implanted with the region where the resistance of the resistivity is formed ,
Forming the low-resistance resistor and the high-resistance resistor.

[0037]

[0038]

[0039]

[0040]

[0041]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a view showing a manufacturing method according to the present invention .
1 shows a differential amplifier circuit which is an embodiment of a semiconductor device manufactured by the method described above. In the same figure, parts that perform the same operations as those of the differential amplifier circuit shown in FIG.

In this differential amplifier circuit, the negative input terminal 12
1, a resistor 11 is connected between the negative input terminal 121 and the output terminal 122. Resistance 11
Is a low resistivity resistor having a resistance of 400Ω, and the resistor 12 is a high resistivity resistor having a resistance of 100Ω.
It has a resistance value of KΩ.

FIGS. 2 (a) and 2 (b) show a low resistivity 1 resistor.
FIG. 1 is a plan view and a cross-sectional view showing the first embodiment. FIG. 2 (a), (b)
As is clear from the resistance 11 of a low resistivity, P ⁺ substrate 2
1, an N ⁺ diffusion layer 22 is formed thereon, and an N-type epitaxial layer 23 is laminated thereon.
A resistance layer 24 formed by implanting a P ⁺ impurity is formed thereon. The implantation of the P ⁺ impurity is performed only twice, and the first implantation forms a layer with a low concentration and a high resistance value, and the second implantation forms the resistance layer 24 with a high concentration and a low resistance value. You.

FIGS. 3 (a) and 3 (b) show a high resistance 1
2 and 3 are a plan view and a sectional view, respectively. FIG. 3 (a), (b)
As is evident from the high resistivity resistor 12, P ⁺ substrate 2
1, an N ⁺ diffusion layer 22 is formed thereon, and an N-type epitaxial layer 23 is laminated thereon.
A resistance layer 25 formed by implanting P ⁺ impurities is formed thereon. The implantation of the P ⁺ impurity is performed only twice.

First, a layer having a low concentration and a low resistance value is formed by the first implantation. Next, the line portion 12b of the resistor 12 is covered with a cover 26, and a second driving is performed. At the time of this second driving, only the area covered by the cover 26 does not have a high density, so that the line portion 12b can be maintained at a low density and a high resistance value. Thereafter, the cover 26 is deleted.

Therefore, the manufacturing process of the high resistivity resistor 12 is the same as that of the low resistivity resistor 11 except that the cover 26 is formed. For this reason, the low-resistance resistor 11 and the high-resistance resistor 12 can be manufactured simultaneously, and the ratio of the resistance values Riba and Ribb of each of the resistors 11 and 12 can be adjusted by adjusting the size and the resistance of the resistors. Accuracy can be improved. That is, the resistance value R of each of the resistors 11 and 12
Even if an error occurs in iba and Ribb, since the manufacturing process is common, the resistance values Riba and Ri of these resistors 11 and 12 are set.
Both bb increase and decrease, and the variation in the ratio between the resistances Riba and Ribb of the resistors 11 and 12 does not increase.

As described above, the resistance Rib of each of the resistors 11 and 12 is obtained.
If the accuracy of the ratio of a, Ribb can be improved, FIG.
, The accuracy of the amplification factor of the differential amplifier circuit is improved.

On the other hand, when the low-resistance resistor 11 and the high-resistance resistor 12 are manufactured in different steps, for example, the error of the resistance value of the low-resistance resistor 11 is ± 20%. When the error of the resistance value of the high-resistance resistor 12 is ± 20%, the ratio of the resistance values of the resistors 11 and 12 is at least ± 20%.
A variation of about 40% will occur.

Also, in this differential amplifier circuit, a resistance value of 400Ω can be obtained by only one low-resistance resistor 11, so that it is necessary to obtain a low resistance value by connecting a large number of resistors in parallel. Therefore, the space for the resistor can be minimized. Alternatively, the low-resistivity resistor 11 and the high-resistivity resistor 12 have different ion concentrations and have different resistivity, so that either the low-resistivity resistor 11 or the high-resistivity resistor 12 can be used. It is not necessary to increase the resistance by increasing one of the dimensions extremely, or to decrease the resistance by extremely decreasing one of the dimensions. For this reason, it does not mean that the dimension of the resistance value becomes too large to occupy space, or that the dimension of the resistance becomes too small to maintain the dimensional accuracy and the accuracy of the resistance value.

FIG. 4 is a cross-sectional view illustrating a structure manufactured by the manufacturing method of the present invention.
1 shows a comparator circuit which is one embodiment of a semiconductor device to be used. Note that, in the same figure, parts that perform the same operations as those of the comparator circuit shown in FIG. 9 are denoted by the same reference numerals, and description thereof will be simplified.

In this comparator circuit, the input voltage Vin
The low resistivity resistor 11 of FIG. 2 is applied to determine the magnitude of the current Ie3 corresponding to the current Ie3, and the high resistivity resistor 12 of FIG. 3 is applied to determine the current Ic1 to be compared with this current Ie3. ing. The resistance value of the low resistivity resistor 11 is 1 KΩ, and the resistance value of the high resistivity resistor 12 is 20.5 KΩ.

As described above, the low-resistance resistor 11 and the high-resistance resistor 12 can be manufactured at the same time.
, The accuracy of the ratio between the resistance values Rb2 and Rb1 can be improved, so that the accuracy of the threshold voltage Vth of the comparator circuit can be improved.

Further, by increasing one of the dimensions of the low resistivity resistor 11 and the high resistivity resistor 12 extremely to increase the resistance value, or by extremely decreasing one of the dimensions, There is no need to reduce the resistance. For example, 2
Assuming that the sheet resistance of the 0.5 KΩ resistor 12 is 2 KΩ / □, the line portion 12 b of the high resistivity resistor 12 shown in FIG.
Are 10 μm and 102.5 μm, and the size of the high-resistivity resistor 12 is neither too large nor too small. Further, the sheet resistance of the 1 KΩ resistor 11 is set to 200
If Ω / □, the width and length of the line portion 11b of the low resistivity resistor 11 shown in FIG. 2 are 10 μm and 50 μm, respectively.
The dimensions of the low resistivity resistor 11 are also just good.

FIG. 5 is a cross-sectional view illustrating a structure manufactured by the manufacturing method of the present invention.
1 shows a constant voltage circuit which is one embodiment of a semiconductor device to be used. Note that, in the same figure, portions that perform the same operations as those of the constant voltage circuit shown in FIG. 10 are denoted by the same reference numerals, and description thereof will be simplified.

In this constant voltage circuit, in order to determine the value of the bandgap type constant current Ie5, the high-resistance resistor 1 shown in FIG.
2 and the low-resistance resistor 11 of FIG. 2 is applied to convert the current Ie5 into a voltage. The resistance value of the high resistivity resistor 12 is 360Ω and the low resistivity resistor 11
Is 40 KΩ.

As described above, the low-resistance resistor 11 and the high-resistance resistor 12 can be manufactured at the same time.
, The accuracy of the output voltage Vs of the constant voltage circuit can be improved.

If the sheet resistance of the low resistivity resistor 11 is 200 Ω / □, its temperature characteristic is 2500 ppm.
/ ° C, and the sheet resistance of the high resistivity resistor 12 is 2 KΩ.
/ □, the temperature characteristic is 5600 ppm / ° C. Further, as described above, since the temperature characteristic of (kT / q × ln2) is +3300 ppm / ° C., if the resistance value of the resistor 11 is Rb1 and the resistance value of the resistor 12 is Rb2, the above equation (4) is obtained. Of (kT / q × ln2) / Rb1 at −2300 ppm / ° C. (= 3300 ppm /
-5600 ppm / ° C), and the sum of -2300 ppm for this component and +2500 ppm / ° C for Rb2 in the above formula (4), that is, +200 ppm / ° C.
Is the temperature characteristic of the output voltage Vs. This temperature characteristic is very small and preferable for a constant voltage circuit.

The present invention is not limited to the above embodiments, but can be variously modified. For example, the circuit configurations of the differential amplifier circuit of FIG. 1, the comparator circuit of FIG. 4, and the constant voltage circuit of FIG. 5 may be slightly changed as long as the basic characteristics do not change. Alternatively, as long as they can be manufactured in the same manufacturing process, a low-resistance resistor or a high-resistance resistor having another configuration can be used.

[0059]

As described above, the semiconductor device of the present invention
According to the manufacturing method of (1), by appropriately combining and applying a resistor implanted with high-concentration ions and a resistor implanted with low-concentration ions, it is possible to reduce the space of the resistor and improve the temperature characteristics.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a differential amplifier circuit as one embodiment of a semiconductor device of the present invention.

2A is a plan view showing a low-resistance resistor in the circuit of FIG. 1, and FIG. 2B is a cross-sectional view showing the resistor.

3A is a plan view showing a high-resistance resistor in the circuit of FIG. 1, and FIG. 3B is a cross-sectional view showing the resistor.

FIG. 4 is a circuit diagram showing a comparator circuit according to one embodiment of the semiconductor device of the present invention;

FIG. 5 is a circuit diagram showing a constant voltage circuit as one embodiment of the semiconductor device of the present invention.

FIG. 6A is a plan view showing another resistor having a low resistivity.
(B) is a sectional view showing the same resistance.

FIG. 7A is a plan view showing another resistor having a high resistivity.
(B) is a sectional view showing the same resistance.

FIG. 8 is a circuit diagram showing a conventional differential amplifier circuit.

FIG. 9 is a circuit diagram showing a conventional comparator circuit.

FIG. 10 is a circuit diagram showing a conventional constant voltage circuit.

[Explanation of symbols]

 11 Low resistivity resistor 12 High resistivity resistor

Claims (3)

(57) [Claims] 1. A low resistivity of the resistor to the negative input terminal is connected, the high resistivity of the resistor is connected, the high resistance rate and resistance of the low resistivity between the input terminal and the output terminal In a method for manufacturing a semiconductor device including a differential amplifier circuit having an amplification factor determined by a ratio of a resistance value to a resistance value of a resistor , a resistance region having a low resistivity and a resistance region having a high resistivity are formed. Simultaneously with low concentration ion implantation, a part of the region where the high resistivity resistor is formed is covered by a cover, and a part not covered by the cover
The region where the high-resistivity resistor is formed and the low-resistivity
A semiconductor device wherein high-concentration ion implantation is simultaneously performed on a region where the low-concentration ions are implanted with a region where the low-resistance ions are formed to form the low-resistivity resistor and the high-resistivity resistor. Manufacturing method. 2. A low-resistivity resistor that determines a ratio of converting an input voltage change to a current change, and a high-resistivity resistor that determines a constant current value to be compared with the converted current. In the method of manufacturing a semiconductor device forming a comparator circuit, after simultaneously performing low-concentration ion implantation in respective regions where the low-resistance resistor and the high-resistance resistor are formed, the high-resistance resistor is A part of the area to be formed is covered by a cover, and a part not covered by the cover
The region where the high-resistivity resistor is formed and the low-resistivity
A semiconductor device wherein high-concentration ion implantation is simultaneously performed on a region where the low-concentration ions are implanted with a region where the low-resistance ions are formed to form the low-resistivity resistor and the high-resistivity resistor. Manufacturing method. 3. A method of manufacturing a semiconductor device comprising a constant-voltage circuit including a high-resistance resistor that determines a value of a bandgap-type constant current and a low-resistance resistor that converts the constant current into a voltage. After simultaneously performing low-concentration ion implantation on each of the regions where the low-resistivity resistor and the high-resistivity resistor are formed, a part of the region where the high-resistivity resistor is formed is covered with a cover. , Parts not covered by the cover
The region where the high-resistivity resistor is formed and the low-resistivity
A semiconductor device wherein high-concentration ion implantation is performed simultaneously on a region where the low-concentration ions are implanted with a region where the low-concentration ions are formed to form the low-resistivity resistor and the high-resistivity resistor. Manufacturing method.