JP3230510B2 - Semiconductor device manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method using a polyparaxylylene film.

[0002]

2. Description of the Related Art In the field of manufacturing ICs, a reduction in signal propagation speed due to wiring resistance and parasitic capacitance between wirings has become a problem as devices have become faster and more highly integrated.
It is important to reduce the RC time constant in order to prevent the signal propagation speed from decreasing, and one of the methods is to reduce the parasitic capacitance between wirings. The parasitic capacitance between the wirings is proportional to the area between the wirings and the relative dielectric constant of the insulating film between the wirings, and increases in inverse proportion to the spacing between the wirings.

Therefore, as one of the methods for reducing the parasitic capacitance without changing the device design, it is effective to lower the relative permittivity of the insulating film. In recent years, an insulating film having a lower relative dielectric constant than conventional SiO ₂ has been studied to reduce the capacitance between wirings. One of them is polyparaxylylene. Polyparaxylylene has a relative dielectric constant of about 2.7 and Si
O ₂ is lower than 3.9, and by using this, it is expected that the parasitic capacitance between wirings can be reduced. Generally, polyparaxylylene is deposited using an apparatus as shown in FIG.

[0004] First, a container 2 containing a solid xylylene dimer represented by the following formula (Chemical Formula 1) is heated at a temperature in the range of about 100 ° C to about 200 ° C, and once vaporized.

[0005]

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The vaporized dimer is heated from 600 ° C. to 700
When introduced into the separation furnace 3 heated to about ° C, it is separated into monomers represented by the following formula (Formula 2).

[0007]

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When the separated monomer is introduced into the film forming chamber 1, a polymerization reaction occurs on the substrate 5 cooled to room temperature or lower, and a polyparaxylylene of the following formula (Formula 3) is formed.

[0009]

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[0010]

As described above, in a method of manufacturing a semiconductor device using a polyparaxylylene film, a high-temperature gas introduced into a film forming chamber is cooled on a substrate and polymerized. A film is formed by a reaction.

For this reason, it is necessary to improve the film forming rate and to efficiently cool the gas. However, such a conventional method has a problem that the film forming rate cannot be sufficiently improved.

The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a method of manufacturing a polyparaxylylene film forming apparatus having a higher film forming rate than a conventional apparatus. It is.

[0013]

According to the present invention, there is provided a semiconductor device manufacturing apparatus comprising: a semiconductor device manufacturing apparatus for forming a polyparaxylylene film by a CVD method; The introduction pressure of the xylylene monomer gas is used as a mechanism for cooling the xylylene monomer gas using an adiabatic expansion phenomenon during the introduction.
Having structure for increasing force and flow velocity "(claim 1).

Further, the introduction pressure and flow rate of the monomer gas of xylylene are
As a structure to increase, xylylene monomer gas
Adjust the diameter of the gas outlet for introducing gas into the deposition chamber.
The pipe diameter of the xylylene monomer gas is narrower than the diameter of the pipe.
The gas outlet is shaped like a nozzle (Claim 2). A container or a container containing a raw material of a monomer gas of xylylene.
Between a separation furnace for separating the raw material and the film forming chamber
Monomer providing the valve on the gas pipe of xylylene (claim 3), the introduction pressure and flow rate of the monomer gas, the xylylene
As a structure to increase, xylylene monomer gas
The gas outlet for introducing gas into the deposition chamber is
Gas inlet hole narrower than the diameter of the pipe for silylene monomer gas
Be multiple with shower head shape (claim 4), characterized by.

A method for manufacturing a semiconductor device according to the present invention comprises:
In the step of forming a polyparaxylylene film by a CVD method, when introducing a xylylene monomer gas into a film forming chamber, a method of cooling the xylylene monomer gas by utilizing an adiabatic expansion phenomenon, Things
Increasing the pressure and flow rate of the mergas "(Claim 5).

Further, the manufacturing apparatus of the semiconductor device according to any one of claims 1 to 4
Using a device, the gas pressure in the pipe is 0.1 MPa or more,
The pressure in the film forming chamber is set to 15 Pa or less,
Increase the pressure and flow rate of the silylene monomer gas.
And (Claim 6). An apparatus for manufacturing a semiconductor device according to any one of Claims 1 to 4.
And feed the raw material of the xylylene monomer gas.
In a container or a separation furnace for separating the raw materials,
Use a carrier gas that does not react with the xylylene monomer gas.
Increased total gas supply by heating and introducing
The xylylene monomer gas introduction pressure and flow rate.
Melco and (claim 7), using the apparatus for manufacturing a semiconductor device according to-claim 3, prior to
With the valve closed, vaporized xylylene dimer
Is introduced into the separation furnace, the valve is opened, and the cap is opened.
Flow the rear gas and with the separated xylylene monomer
It said introducing into the deposition chamber (claim 8), using Ar, He, or the N2 as a carrier gas which does not react with the monomer gas, the xylylene (claim 9), characterized by.

(Operation) In the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method according to the present invention, when the pressure difference between the gas pipe and the film forming chamber is increased, the volume of the gas when introduced into the film forming chamber is increased. Expands rapidly. At this time, since there is no exchange of heat energy, cooling is performed by the adiabatic expansion phenomenon. By using this adiabatic expansion phenomenon, the xylylene monomer is cooled in the gas phase, and a film of polyparaxylylene is formed.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view for explaining a first embodiment of the semiconductor device according to the present invention, FIG. 2 is a schematic cross-sectional view for explaining a second embodiment of the semiconductor device according to the present invention, FIG. 3 is a schematic sectional view for explaining Example 3 of the semiconductor device according to the present invention.

(Embodiment 1) Hereinafter, Embodiment 1 of the present invention will be described with reference to FIG. In this example, polyparaxylylene was deposited using the apparatus shown in FIG. First, dimer 1 of xylylene in a solid powder state as a raw material 1
2 is heated to 200 ° C. in a bottle (container) 2 and vaporized. This is once heated to 700 ° C. in a separation furnace 3 to separate a dimer of xylylene to form a monomer.

This monomer is introduced into the film forming chamber 1 through a pipe 13 heated to 100 ° C. At this time, the tip of the pipe is formed into a nozzle having a diameter of 1 mm, and the nozzle is provided with a gas outlet 13 a through the nozzle. Xylylene monomer gas 1
Introduce 1. At this time, the gas pressure in the piping was 0.1MPa.
The gas flow velocity is increased to a or more. When the pressure in the film forming chamber 1 is reduced to 15 Pa or less and the pressures in the pipe 13 and the film forming chamber 1 are increased, the monomer gas heated to 700 ° C. by adiabatic expansion is cooled to 100 ° C. or less.

At this time, a part of the monomer gas forms a cluster. By supplying the cooled monomer gas onto the substrate 5 cooled to 0 ° C., the polymerization reaction was efficiently promoted, and the film formation rate of polyparaxylylene was improved.

(Embodiment 2) Next, Embodiment 2 of the present invention will be described with reference to FIG. In the present embodiment, as shown in FIG. 2, nine gas introduction holes having a diameter of 0.5 mm are provided in the form of a shower head-shaped gas outlet 13b in order to secure a uniform film thickness on the substrate 5 (in the plane of the wafer). Provided.

In this apparatus, Ar gas heated to 200 ° C. as a carrier gas 9 is supplied into the bottle 2 for 200 sc.
cm. By using the carrier gas 9, the total gas supply amount was increased, and the gas pressure and the flow velocity in the supply pipe 13 were increased. Thus, a polyparaxylylene film having good in-plane uniformity was formed. In this case, with Ar as carrier gas 9 is not particularly specified as long as unreacted and He, etc. or a N ₂ polyparaxylylene.

(Embodiment 3) Next, Embodiment 3 of the present invention will be described with reference to FIG. First, a vaporized xylylene dimer of 50 sccm is introduced into the separation furnace 3 for 1 minute with the valve 10 of FIG. 3 closed. Then, the valve 10 is opened and an Ar carrier gas 9 is flowed at 100 sccm and introduced into the film forming chamber 1 together with the separated xylylene monomer.
A polyparaxylylene film is formed. Here, the separation furnace 3
Once the xylylene dimer is retained in the reactor, the pressure inside the separation furnace 3 increases and the heat conduction in the gas improves, so that the separation efficiency of the dimer is improved, more monomer is formed, and the film formation rate is reduced. improves.

Further, since the gas pressure in the pipe 13 increases,
The pressure difference between the inside of the film formation chamber 1 becomes large, and the efficiency of adiabatic expansion is further improved. Thereby, the film formation rate is improved, and more clusters are formed, so that porous polyparaxylylene is formed.

[0026]

According to the method of manufacturing a semiconductor device according to the present invention, since the film forming gas is cooled in the gas phase by adiabatic expansion, the cooling of the reaction gas is more effective than when the film is cooled only on the substrate. And the film formation rate can be greatly improved. Also, when the gas is cooled by adiabatic expansion, clusters are formed in part, so that pores are formed between the clusters, the film density is reduced, and the relative dielectric constant of polyparaxylylene can be reduced. it can.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view for explaining Example 1 of a semiconductor device according to the present invention.

FIG. 2 is a schematic cross-sectional view for explaining Example 2 of the semiconductor device according to the present invention.

FIG. 3 is a schematic cross-sectional view for explaining a third embodiment of the semiconductor device according to the present invention.

FIG. 4 is a schematic cross-sectional view illustrating a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Film-forming chamber 2 Bottle (container) 3 Separation furnace 4 Susceptor 5 Substrate 6 Heater 7 Turbo pump 8 Dry pump 9 Carrier gas 10 Valve 11 Xylylene monomer gas 12 Raw material (xylylene dimer) 13 Piping 13a, 13b, 13c Gas blowing mouth

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/312 H01L 21/31 C23C 16/00-16/58

Claims (9)

(57) [Claims] In a semiconductor device manufacturing apparatus for forming a polyparaxylylene film by a CVD method, when a xylylene monomer gas is introduced into a film forming chamber, the xylylene monomer is utilized by utilizing adiabatic expansion phenomenon. As a mechanism for cooling the gas, the pressure at which the monomer gas of xylylene is introduced.
And a structure for increasing a flow velocity . 2. An introduction pressure of said xylylene monomer gas.
As a structure to increase force and flow velocity, xylylene
Gas blowing for introducing the nomer gas into the film formation chamber
The diameter of the port is the diameter of the pipe for the xylylene monomer gas.
And the shape of the gas outlet is nozzle-shaped.
2. The semiconductor device manufacturing apparatus according to claim 1, wherein
Place. 3. A raw material for a monomer gas of xylylene is charged.
Container or separation furnace for separating the raw material and the film forming chamber
Between the xylylene monomer gas piping and the valve
3. The semiconductor device according to claim 2, further comprising:
Manufacturing equipment . 4. An introduction pressure of said xylylene monomer gas.
As a structure to increase force and flow velocity, xylylene
Gas blowing for introducing the nomer gas into the film formation chamber
The port is narrower than the diameter of the xylylene monomer gas pipe.
Shower head with multiple gas inlet holes
The apparatus for manufacturing a semiconductor device according to claim 1, wherein: 5. A method for cooling a xylylene monomer gas using an adiabatic expansion phenomenon when introducing a xylylene monomer gas into a film formation chamber in a step of forming a polyparaxylylene film by a CVD method. As the xy
Increasing pressure and flow rate of rylene monomer gas
A method for manufacturing a semiconductor device, comprising: 6. A semiconductor according to claim 1, wherein:
Using a manufacturing apparatus of the apparatus, the gas pressure in the pipe is 0.1
MPa or more, and the pressure in the film forming chamber is 15 Pa or less.
And the introduction pressure and flow rate of the xylylene monomer gas.
6. The semiconductor device according to claim 5, wherein the speed is increased.
Manufacturing method of the device. 7. A semiconductor according to claim 1, wherein:
Using the manufacturing equipment of the apparatus, the monomer xylylene gas
Containers containing raw materials for raw materials or separation for separating the raw materials
A key that does not react with the monomer gas of xylylene is placed in the furnace.
All gas supply by heating and introducing carrier gas
The xylylene monomer gas introduction pressure and
The flow rate and flow rate are increased.
Of manufacturing a semiconductor device. 8. An apparatus for manufacturing a semiconductor device according to claim 3.
With the valve closed,
After introducing the Lendimer into the separation furnace, the valve
To open a key that does not react with the xylylene monomer gas.
Carrier gas and with the separated xylylene monomer.
Wherein the gas is introduced into the film forming chamber.
8. The method for manufacturing a semiconductor device according to any one of 7. 9. The method according to claim 7 or 8, characterized by using Ar, He, or the N2 as a carrier gas which does not react with the monomer gas in said xylylene.