JP3225142U - LED package structure - Google Patents
LED package structure Download PDFInfo
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- JP3225142U JP3225142U JP2019004554U JP2019004554U JP3225142U JP 3225142 U JP3225142 U JP 3225142U JP 2019004554 U JP2019004554 U JP 2019004554U JP 2019004554 U JP2019004554 U JP 2019004554U JP 3225142 U JP3225142 U JP 3225142U
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- 238000000926 separation method Methods 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
【課題】ＬＥＤブラケット内の空間を有効に利用するとともに、有効空間に配置可能なウェーハの個数が多くなり、ウェーハの間隔も広くなり、分布が均一になり、光損失が減少し、ＬＥＤの輝度を向上させることができるＬＥＤパッケージ構造を提供する。【解決手段】ＬＥＤパッケージ構造１００であって、溝部１１を設けるＬＥＤブラケット１０と、溝部内に設ける第１チップ２１、第２チップ２２、第３チップ２３とを備え、溝部底部が、分離層１２によって長手方向に互いに絶縁された第１電極１１１と第２電極１１２とに分割され、溝部長手方向における第１電極の寸法は、溝部長手方向における第２電極の寸法の２〜３倍であり、第１チップ、第２チップ、第３チップは、溝部内に横方向に配置され、且つ第１チップおよび第２チップが第１電極において一定の間隔で配置され、第３チップが第２電極上に取り付けられる。【選択図】図１An object of the present invention is to effectively utilize the space in an LED bracket, increase the number of wafers that can be arranged in the effective space, increase the spacing between wafers, make the distribution uniform, reduce light loss, and reduce the brightness of LEDs. Provided is an LED package structure that can improve the LED package structure. An LED package structure includes an LED bracket provided with a groove, a first chip, a second chip, and a third chip provided in the groove. Is divided into a first electrode 111 and a second electrode 112 that are insulated from each other in the longitudinal direction. The dimension of the first electrode in the longitudinal direction of the groove is two to three times the dimension of the second electrode in the longitudinal direction of the groove. The first chip, the second chip, and the third chip are arranged laterally in the groove, the first chip and the second chip are arranged at regular intervals in the first electrode, and the third chip is the second chip. Mounted on the electrode. [Selection diagram] Fig. 1
Description
本考案は、ＬＥＤパッケージ構造に関し、特に、ＬＥＤブラケット空間を有効に利用できるＬＥＤパッケージ構造に関する。 The present invention relates to an LED package structure, and more particularly, to an LED package structure that can effectively utilize an LED bracket space.
ＬＥＤブラケットは、金属リード線フレームと絶縁筐体とで構成され、金属リード線フレームは、帯状第１電極と帯状第２電極とを備え、絶縁筐体は、前記金属リード線フレームを覆い、且つ金属リード線フレームにおいてＬＥＤチップを収容するマウンティングカップが形成され、第１電極の幅は、第２電極の幅の４倍以上であり、ＬＥＤを取り付ける時、第１電極に２つのＬＥＤチップしか取り付けられず、第２電極には配置できないため、ＬＥＤブラケット内部の空間を有効に利用することができない。また、ＬＥＤチップが第１電極にしか配置されず、ウェーハの設置可能な個数は、例えば、大きい方のウェーハが一つまたは２つしか設置できないように制限され、且つ、取り付けられたウェーハ同士の間隔が小さく、均等に分散することが難しく、光損失が大きい。 The LED bracket includes a metal lead frame and an insulating casing, the metal lead frame includes a first strip electrode and a second strip electrode, and the insulating casing covers the metal lead frame, and A mounting cup for accommodating the LED chip is formed in the metal lead frame, and the width of the first electrode is at least four times the width of the second electrode. When mounting the LED, only two LED chips are mounted on the first electrode. Therefore, the space inside the LED bracket cannot be used effectively because the space cannot be arranged on the second electrode. In addition, the LED chips are arranged only on the first electrode, and the number of wafers that can be installed is, for example, limited so that only one or two larger wafers can be installed, and the number of wafers attached to each other is limited. The spacing is small, it is difficult to distribute evenly, and the light loss is large.
したがって、上記の問題を解決できる新たなＬＥＤパッケージ構造を開発する必要がある。 Therefore, it is necessary to develop a new LED package structure that can solve the above problem.
本考案は、ＬＥＤパッケージ構造を提供することを目的とし、前記ＬＥＤパッケージ構造は、ＬＥＤブラケット内の空間を有効に利用し、空間内にはウェーハをより多く配置することができ、且つ、ウェーハ同士の感覚が大きくなり、分布が均一になり、光損失が減少し、ＬＥＤの輝度を向上させることができる。 An object of the present invention is to provide an LED package structure, wherein the LED package structure effectively utilizes the space in the LED bracket, allows more wafers to be arranged in the space, and allows the wafers to be arranged with each other. Sensation increases, the distribution becomes uniform, light loss decreases, and the brightness of the LED can be improved.
上記の目的を達成するために、本考案は、ＬＥＤパッケージ構造であって、溝部を設けるＬＥＤブラケットと、前記溝部内に設ける第１チップ、第２チップ、第３チップとを備え、前記溝部底部が、分離層によって長手方向に長手方向に互いに絶縁された第１電極と第２電極とに分割され、前記溝部長手方向における前記第１電極の寸法は、前記溝部長手方向における前記第２電極の寸法の２〜３倍であり、前記第１チップ、第２チップ、第３チップは、は、前記溝部内に横方向に配置され、且つ前記第１チップおよび第２チップが前記第１電極において一定の間隔で配置され、前記第３チップが前記第２電極上に取り付けられるＬＥＤパッケージ構造を提供する。 According to an aspect of the present invention, there is provided an LED package structure including an LED bracket having a groove, a first chip, a second chip, and a third chip provided in the groove. Is divided into a first electrode and a second electrode that are insulated from each other in the longitudinal direction by a separation layer, and the dimension of the first electrode in the longitudinal direction of the groove is the second electrode in the longitudinal direction of the groove. The first chip, the second chip, and the third chip are two to three times the size of the electrode, and the first chip, the second chip, and the third chip are laterally arranged in the groove, and the first chip and the second chip are the first chip Provided is an LED package structure in which the third chip is mounted on the second electrode at regular intervals in the electrode.
従来技術と比較して、本考案の前記第１電極の長さは、第２電極長さの２〜３倍である。これによって、チップが溝部内部に横方向に配置される時、前記第１チップ、第２チップ、第３チップは、前記溝部の長手方向に沿って、一定の間隔で前記第１電極上に取り付けられ、且つ、２つのチップが第１電極上に配置され、一つのチップが第２電極上に配置されることができる。したがって、ＬＥＤブラケット内の空間を有効に利用するとともに、有効空間に配置可能なウェーハの個数が多くなり、ウェーハの間隔も広くなり、分布が均一になり、、光損失が減少し、ＬＥＤの輝度を向上させることができる。 Compared with the prior art, the length of the first electrode of the present invention is 2-3 times longer than the length of the second electrode. Accordingly, when the chips are arranged laterally inside the groove, the first, second and third chips are mounted on the first electrode at regular intervals along the longitudinal direction of the groove. And two chips can be arranged on the first electrode, and one chip can be arranged on the second electrode. Therefore, while effectively utilizing the space in the LED bracket, the number of wafers that can be arranged in the effective space increases, the spacing between the wafers increases, the distribution becomes uniform, the light loss decreases, and the brightness of the LED decreases. Can be improved.
好ましくは、前記溝部長手方向における、前記第１電極と前記第２電極との寸法の比が３：７である。 Preferably, the ratio of the dimensions of the first electrode and the second electrode in the longitudinal direction of the groove is 3: 7.
好ましくは、前記第１チップと第２チップとが、前記溝部の幅方向に沿って交互に配置され、これによって、金線のはんだ付けが容易になり、金線を節約する。 Preferably, the first chips and the second chips are alternately arranged along the width direction of the groove, thereby facilitating the soldering of the gold wire and saving the gold wire.
好ましくは、前記第１チップ、第２チップ、および第３チップは、前記第１電極と第２電極との間に、金線により順次直列に接続される。 Preferably, the first chip, the second chip, and the third chip are sequentially connected in series by a gold wire between the first electrode and the second electrode.
好ましくは、前記第１チップ、第２チップ、第３チップは、幅が０．５６ｍｍであり、長さが１．０４ｍｍであり、前記溝部は、幅が１．７ｍｍであり、長さが２．２５ｍｍであり、前記溝部の深さは０．４ｍｍ以上である。 Preferably, the first chip, the second chip, and the third chip have a width of 0.56 mm and a length of 1.04 mm, and the groove has a width of 1.7 mm and a length of 2 mm. .25 mm, and the depth of the groove is 0.4 mm or more.
好ましくは、前記ＬＥＤブラケットは、リードフレームと絶縁部とを備え、前記リードフレームは、カップ形状であり且つ内部に前記溝部が形成され、前記リードフレームは、底壁および側壁に沿って、スリットにより第１電極と第２電極とに分割され、且つ、前記側壁におけるスリットの幅が前記底壁におけるスリットの幅よりも広く、前記絶縁部が一体的に形成され、且つ、前記リードフレームを覆う絶縁ケースと、前記スリットに充填して生成された前記分離層とを備える。 Preferably, the LED bracket includes a lead frame and an insulating part, the lead frame is cup-shaped and the groove is formed inside, and the lead frame is formed by a slit along a bottom wall and a side wall. A first electrode and a second electrode, wherein the width of the slit in the side wall is wider than the width of the slit in the bottom wall, the insulating portion is integrally formed, and the insulation covering the lead frame is formed. A case, and the separation layer formed by filling the slit.
好ましくは、前記第１電極は、第１底壁と、前記第１底壁と接続される第１側壁とを備え、前記第２電極は、第２底壁と、前記第２底壁と接続される第２側壁とを備え、前記スリットは、前記第１底壁と第２底壁との間に形成された第１スリットと、前記第１側壁と第２側壁との間に形成され且つ前記第１スリットの両端に位置される第２スリットとを備え、前記第２スリットは、前記第１スリットの位置に対向し、且つ、幅が前記第１スリットの幅よりも広く、前記分離層は、前記第１スリットに充填される第１スペーサ層と、第２スリットに充填される第２スペーサ層とを備える。本考案においては、金属リード線フレーム自体がＬＥＤチップの収容溝を形成したため、ＬＥＤブラケットの耐衝撃性が向上する。前記側壁におけるスリットと前記底壁におけるスリットとは、幅の違いにより、前記側壁におけるスリットと前記底壁におけるスリットとの間に曲げ線が形成され、第１電極、第２電極および絶縁的な絶縁スペーサ層との間の接続面積が有効に増加し、ＬＥＤブラケットの構造の強固性を向上させることができる。また、本考案のＬＥＤブラケット全体が金属で構成されているため、収容溝の内溝壁を絶縁材料で覆う必要がなく、ＬＥＤブラケットの熱放散性が効果的に改善することができる。さらに、リードフレーム外を覆う絶縁部も、ＬＥＤブラケット強固性を向上させることができる。 Preferably, the first electrode includes a first bottom wall and a first side wall connected to the first bottom wall, and the second electrode is connected to the second bottom wall and the second bottom wall. A second slit formed between the first and second bottom walls, and the slit is formed between the first and second side walls; A second slit positioned at both ends of the first slit, wherein the second slit faces a position of the first slit, and has a width larger than a width of the first slit; Comprises a first spacer layer filled in the first slit and a second spacer layer filled in the second slit. In the present invention, since the metal lead frame itself forms the groove for accommodating the LED chip, the impact resistance of the LED bracket is improved. A bending line is formed between the slit in the side wall and the slit in the bottom wall due to a difference in width between the slit in the side wall and the slit in the bottom wall, and the first electrode, the second electrode, and the insulating insulator are formed. The connection area between the spacer and the spacer layer can be effectively increased, and the structure of the LED bracket can be strengthened. Further, since the entire LED bracket of the present invention is made of metal, it is not necessary to cover the inner groove wall of the accommodation groove with an insulating material, and the heat dissipation of the LED bracket can be effectively improved. Further, the insulating portion covering the outside of the lead frame can also improve the rigidity of the LED bracket.
より好ましくは、前記第２スリットが前記リードフレームの２つの対向する辺に形成される。本考案では、第１電極と第２電極との間にあるスリットが側壁の縁部にのみ形成され、コーナーには形成されない。これによって、ＬＥＤブラケットの隅には封止された金属材料を有し、ＬＥＤブラケットが亀裂や挟まれることによって変形するのを防ぐことができる。 More preferably, the second slit is formed on two opposite sides of the lead frame. In the present invention, the slit between the first electrode and the second electrode is formed only at the edge of the side wall, not at the corner. Thereby, the corner of the LED bracket has a sealed metal material, and it is possible to prevent the LED bracket from being deformed by being cracked or pinched.
好ましくは、前記ＬＥＤパッケージ構造は、前記溝部内に設けられ且つ前記第１チップ、第２チップ、第３チップを封止するシーラント層をさらに備え。 Preferably, the LED package structure further includes a sealant layer provided in the groove and sealing the first chip, the second chip, and the third chip.
以下の実施形態および図面を参照しながら、本考案の技術的な内容、構造特徴、目的および効果を詳細に説明する。 The technical contents, structural features, objects and effects of the present invention will be described in detail with reference to the following embodiments and drawings.
図１に示すように、本考案の第１実施形態では、ＬＥＤパッケージ構造１００は、溝部１１を設けるＬＥＤブラケット１０と、前記溝部１１内に設けられる第１チップ２１、第２チップ２２、第３チップ２３とを備える。前記溝部１１の底部が、分離層１２によって長手方向に互いに絶縁された第１電極１１１と第２電極１１２とに分割される。前記第１電極１１１は、前記溝部１１の長手方向における寸法が第２電極１１２の前記溝部１１長手方向における寸法の２〜３倍である。前記第１チップ２１、第２チップ２２、第３チップ２３は、前記溝部１１内に横方向に配置され、且つ前記第１チップ２１および第２チップ２２が前記第１電極１１１において一定の間隔で配置され、前記第３チップ２３が前記第２電極１１２上に取り付けられる。 As shown in FIG. 1, in the first embodiment of the present invention, the LED package structure 100 includes an LED bracket 10 having a groove 11, a first chip 21, a second chip 22, and a third chip 22 provided in the groove 11. And a chip 23. The bottom of the groove 11 is divided into a first electrode 111 and a second electrode 112 which are insulated from each other in the longitudinal direction by the separation layer 12. The dimension of the first electrode 111 in the longitudinal direction of the groove 11 is two to three times the dimension of the second electrode 112 in the longitudinal direction of the groove 11. The first chip 21, the second chip 22, and the third chip 23 are arranged laterally in the groove 11, and the first chip 21 and the second chip 22 are arranged at regular intervals on the first electrode 111. The third chip 23 is mounted on the second electrode 112.
本実施形態において、前記溝部１１長手方向における、前記第１電極１１１と前記第２電極１１２との寸法の比は、３：７である。 In the present embodiment, the ratio of the dimensions of the first electrode 111 and the second electrode 112 in the longitudinal direction of the groove 11 is 3: 7.
より好ましくは、前記第１チップ２１および第２チップ２２は、前記溝部１１の幅方向に沿って交互に配置され、これによって、金線のはんだ付けが容易になり、金線を節約することができる。また、前記第１チップ２１、第２チップ２２、第３チップ２３は、前記第１電極１１１と第２電極１１２との間に、金線により順次直列に接続される。前記溝部１１の幅方向に沿って、第３チップ２３および第２チップ２２が交互に配置される。 More preferably, the first chips 21 and the second chips 22 are alternately arranged along the width direction of the groove portion 11, thereby facilitating the soldering of the gold wire and saving the gold wire. it can. In addition, the first chip 21, the second chip 22, and the third chip 23 are sequentially connected in series between the first electrode 111 and the second electrode 112 by a gold wire. Third chips 23 and second chips 22 are alternately arranged along the width direction of the groove 11.
本実施形態において、前記第１チップ２１、第２チップ２２、第３チップ２３は、幅が０．５６ｍｍであり、長さが１．０４ｍｍであり、前記溝部１１の幅が１．７ｍｍであり、長さが２．２５ｍｍであり、前記溝部１１の深さは０．４ｍｍ以上である。 In the present embodiment, the first chip 21, the second chip 22, and the third chip 23 have a width of 0.56 mm, a length of 1.04 mm, and a width of the groove 11 of 1.7 mm. , The length is 2.25 mm, and the depth of the groove 11 is 0.4 mm or more.
また、前記ＬＥＤパッケージ構造１００は、前記溝部１１内に配置され、前記第１チップ２１、第２チップ２２、第３チップ２３を封止するシーラント層（図示せず）をさらに備える。 In addition, the LED package structure 100 further includes a sealant layer (not shown) that is disposed in the groove 11 and seals the first chip 21, the second chip 22, and the third chip 23.
図２および図３は、本考案の第２実施形態を示している。第１実施形態と比較して、当該実施形態では、ＬＥＤパッケージ構造１００ａのＬＥＤブラケット１０ａは、リードフレームと絶縁部とを備え、前記リードフレームは、カップ形状であり、且つ内部に溝部１１ａが形成され、前記リードフレームは、底壁および側壁に沿って、スリットにより、第１電極１１１ａと第２電極１１２ａとに分割され、且つ前記側壁におけるスリットの幅は、前記底壁におけるスリットの幅よりも広い。前記絶縁部が一体的に形成されており、且つ、前記リードフレームを覆う絶縁ケース１２３と、前記スリットに充填して形成された前記分離層１２ａとを備える。 2 and 3 show a second embodiment of the present invention. Compared with the first embodiment, in this embodiment, the LED bracket 10a of the LED package structure 100a includes a lead frame and an insulating part, the lead frame is cup-shaped, and a groove 11a is formed inside. The lead frame is divided into a first electrode 111a and a second electrode 112a by a slit along the bottom wall and the side wall, and the width of the slit on the side wall is larger than the width of the slit on the bottom wall. wide. The insulating portion is integrally formed and includes an insulating case 123 covering the lead frame, and the separation layer 12a formed by filling the slit.
図２および図３に示すように、前記第１電極１１１ａは、第１底壁３１と、前記第１底壁３１に接続される第１側壁３２とを備える。前記第２電極１１２は、第２底壁４１と、前記第２底壁４１に接続される第２側壁４２とを備える。前記スリットは、前記第１底壁３１と第２底壁４１との間に形成された第１スリットと、前記第１側壁３２と第２側壁４２との間に形成され且つ前記第１スリットの両端に位置される第２スリットとを備える。前記第２スリットは、前記第１スリットの位置に対向し、且つ前記第１スリットの幅より広い。前記分離層１２ａは、前記第１スリットに充填される第１スペーサ層１２１と、第２スリットに充填される第２スペーサ層１２２とを備える。前記第２スリットは、前記リードフレームの２つの対向する辺に形成される。 As shown in FIGS. 2 and 3, the first electrode 111a includes a first bottom wall 31 and a first side wall 32 connected to the first bottom wall 31. The second electrode 112 includes a second bottom wall 41 and a second side wall 42 connected to the second bottom wall 41. The slit is formed between the first bottom wall 31 and the second bottom wall 41, the first slit is formed between the first side wall 32 and the second side wall 42, and the first slit is formed. And second slits located at both ends. The second slit faces the position of the first slit and is wider than the width of the first slit. The separation layer 12a includes a first spacer layer 121 filled in the first slit and a second spacer layer 122 filled in the second slit. The second slit is formed on two opposite sides of the lead frame.
以上、本考案の好適な実施形態を説明したが、本考案の範囲はこれに限定されず、本考案に基づいて行われる同等の変更は、本考案登録請求の範囲内である。 Although the preferred embodiment of the present invention has been described above, the scope of the present invention is not limited to this, and equivalent changes made based on the present invention are within the scope of the claims for registering the present invention.
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