JP3220631B2 - Plasma processing method and apparatus - Google Patents
Plasma processing method and apparatusInfo
- Publication number
- JP3220631B2 JP3220631B2 JP31871195A JP31871195A JP3220631B2 JP 3220631 B2 JP3220631 B2 JP 3220631B2 JP 31871195 A JP31871195 A JP 31871195A JP 31871195 A JP31871195 A JP 31871195A JP 3220631 B2 JP3220631 B2 JP 3220631B2
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- plasma processing
- vacuum vessel
- dielectric plate
- processing apparatus
- plasma
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Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】本発明は、半導体等の製造に
利用するプラズマ処理方法及び装置に関し、特に高真空
度において高密度プラズマを発生させることができ、貴
金属を含む積層膜のプラズマ処理に適したプラズマ処理
方法及び装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus used for manufacturing semiconductors and the like, and more particularly to a plasma processing method and apparatus capable of generating high-density plasma at a high vacuum degree and suitable for plasma processing of a laminated film containing a noble metal. And a plasma processing method and apparatus.
【0002】[0002]
【従来の技術】次世代の半導体メモリーとして注目を浴
び開発が急がれている強誘電体薄膜を利用した不揮発性
メモリの製造工程において、特に電極材料として利用さ
れる白金(Pt)のドライエッチングに関して処理後の
高い面内均一性と良好な形状が確保されるとともに高い
生産性を実現できるプラズマ処理方法及び装置が求めら
れている。2. Description of the Related Art In a manufacturing process of a non-volatile memory using a ferroelectric thin film, which has attracted attention as a next-generation semiconductor memory and has been rapidly developed, in particular, dry etching of platinum (Pt) used as an electrode material. Regarding the above, there is a demand for a plasma processing method and apparatus capable of ensuring high in-plane uniformity and a good shape after processing and realizing high productivity.
【0003】従来の一般的なプラズマ処理装置として
は、低真空で使用される平行平板型プラズマ処理装置
(RIEプラズマ処理装置)や、高真空で高いプラズマ
密度が得られる誘導結合形プラズマ処理装置(MSCプ
ラズマ処理装置)、マイクロ波と磁場によって構成され
高真空で高いプラズマ密度が得られるECRプラズマ処
理装置などがある。As a conventional general plasma processing apparatus, a parallel plate type plasma processing apparatus (RIE plasma processing apparatus) used in a low vacuum, or an inductively coupled plasma processing apparatus (1) capable of obtaining a high plasma density in a high vacuum. (MSC plasma processing apparatus), an ECR plasma processing apparatus constituted by a microwave and a magnetic field, and capable of obtaining a high plasma density in a high vacuum.
【0004】図4に平行平板型プラズマ処理装置の一般
的な装置構成を示す。図4において、21は真空容器
で、筒状体22の上下開口部を上方壁面体23と下方壁
面体24により封止したものであり、必要に応じて筒状
体22の側面に給排気孔等が設けられている。25は上
方壁面体23の内面に配置された上部電極、26は下方
壁面体24の内面において上部電極25と対向する位置
に配置された下部電極、27は下部電極26上に載置さ
れた基板、28は高周波電源である。FIG. 4 shows a general configuration of a parallel plate type plasma processing apparatus. In FIG. 4, reference numeral 21 denotes a vacuum vessel, in which the upper and lower openings of a cylindrical body 22 are sealed by an upper wall body 23 and a lower wall body 24. Etc. are provided. Reference numeral 25 denotes an upper electrode disposed on the inner surface of the upper wall member 23, reference numeral 26 denotes a lower electrode disposed at a position facing the upper electrode 25 on the inner surface of the lower wall member 24, and reference numeral 27 denotes a substrate mounted on the lower electrode 26. , 28 are high frequency power supplies.
【0005】以上の構成において、真空容器21内に適
当なガスを導入しつつ排気し、真空容器21内を適当な
圧力に保ちながら、高周波電源28により下部電極26
に高周波電圧を印加することにより、真空容器21内に
プラズマが発生し、基板27に対してプラズマ処理を行
なうことができる。[0005] In the above-described configuration, the gas is evacuated while introducing an appropriate gas into the vacuum vessel 21, and the lower electrode 26 is supplied by the high frequency power supply 28 while maintaining the inside of the vacuum vessel 21 at an appropriate pressure.
By applying a high-frequency voltage to the substrate 27, plasma is generated in the vacuum vessel 21, and the plasma processing can be performed on the substrate 27.
【0006】また、図5に多重の渦巻状に構成された電
磁誘導コイルを用いた誘導結合型プラズマ処理装置(以
下、MSCプラズマ処理装置と称する。)の装置構成を
示す。なお、詳細については特願平6−219323号
に記載されている。FIG. 5 shows an apparatus configuration of an inductively coupled plasma processing apparatus (hereinafter referred to as an MSC plasma processing apparatus) using multiple spirally formed electromagnetic induction coils. The details are described in Japanese Patent Application No. 6-219323.
【0007】図5において、31は真空容器で、筒状体
32の上下の開口部を上方壁面としての誘電体板33と
下方壁面体34により封止したものであり、必要に応じ
て筒状体32の側面に給排気孔等が設けられる。35は
誘電体板33への投影面積が5%程度の多重の渦巻状電
磁誘導コイル、36は下方壁面体34の内面に配置され
た電極、37は電極36上に載置された基板、38は第
1高周波電源、39は第2高周波電源である。In FIG. 5, reference numeral 31 denotes a vacuum vessel, in which upper and lower openings of a cylindrical body 32 are sealed by a dielectric plate 33 as an upper wall surface and a lower wall surface member 34, and if necessary, a cylindrical shape. A supply / exhaust hole or the like is provided on a side surface of the body 32. 35 is a multiple spiral electromagnetic induction coil whose projected area on the dielectric plate 33 is about 5%, 36 is an electrode arranged on the inner surface of the lower wall 34, 37 is a substrate mounted on the electrode 36, 38 Is a first high frequency power supply, and 39 is a second high frequency power supply.
【0008】以上の構成において、真空容器31内に適
当なガスを導入しつつ排気し、真空容器31内を適当な
圧力を保ちながら、第1高周波電源38により電磁誘導
コイル35に高周波電圧を印加することにより、真空容
器31内にプラズマが発生し、基板37に対してプラズ
マ処理を行なうことができる。なお、このとき電極36
にも高周波電圧を印加すると、基板37に到達するイオ
ンエネルギーを制御することができる。In the above-described structure, a high-frequency voltage is applied to the electromagnetic induction coil 35 by the first high-frequency power supply 38 while evacuating while introducing an appropriate gas into the vacuum vessel 31 and maintaining an appropriate pressure in the vacuum vessel 31. By doing so, plasma is generated in the vacuum vessel 31 and plasma processing can be performed on the substrate 37. At this time, the electrode 36
When a high-frequency voltage is also applied, the ion energy reaching the substrate 37 can be controlled.
【0009】[0009]
【発明が解決しようとする課題】しかしながら、図4に
示した低真空度でプラズマを発生させる平行平板型プラ
ズマ処理装置で白金(Pt)のエッチングを行なう場合
は、プラズマ密度が低く最適なエッチング速度を得るこ
とができない。However, when platinum (Pt) is etched by a parallel plate type plasma processing apparatus for generating plasma at a low vacuum shown in FIG. 4, the plasma density is low and the optimum etching rate is low. Can not get.
【0010】また、マイクロ波と磁場によって構成され
るECRプラズマ処理装置で白金(Pt)のエッチング
を行なうと、比較的高真空度で高密度なプラズマが得ら
れるので、微細化加工等で良好なエッチングを行なうこ
とができ、エッチング速度の高速性にも優れている。し
かし、被加工物のエッチングの面内均一性が得られ難
く、またエッチングの際に発生する生成物が真空容器内
に堆積し、被加工物の汚染の原因となるという問題があ
る。When platinum (Pt) is etched by an ECR plasma processing apparatus constituted by a microwave and a magnetic field, a plasma having a relatively high vacuum and a high density can be obtained. Etching can be performed, and the etching speed is excellent. However, there is a problem that it is difficult to obtain in-plane uniformity of the etching of the workpiece, and a product generated at the time of etching accumulates in the vacuum vessel, thereby causing contamination of the workpiece.
【0011】さらに、図5に示したMSCプラズマ処理
装置で白金(Pt)のエッチングを行なうと、ECRプ
ラズマ処理装置と同様に微細化加工等で良好なエッチン
グを行なうことができ、エッチング速度の高速性にも優
れている。また、コイルの形状を調整することで容易に
プラズマ密度を均一にできるため、被加工物のエッチン
グの面内均一性も良好である。しかし、エッチングの際
に発生する生成物が真空容器内に堆積し、被加工物の汚
染の原因となるという問題がある。Further, when platinum (Pt) is etched by the MSC plasma processing apparatus shown in FIG. 5, good etching can be performed by fine processing or the like as in the case of the ECR plasma processing apparatus, and the etching rate can be increased. Also excellent in nature. Further, since the plasma density can be easily made uniform by adjusting the shape of the coil, the in-plane uniformity of the etching of the workpiece is also good. However, there is a problem that products generated at the time of etching accumulate in the vacuum vessel and cause contamination of the workpiece.
【0012】本発明は、このような従来の問題点に鑑
み、高真空において誘導結合性の高密度プラズマを発生
することができて良好な処理速度を実現でき、また最適
なプラズマ分布により良好な処理の面内均一性が得ら
れ、しかも誘電体板や真空容器壁面に堆積する生成物の
量を軽減できるプラズマ処理方法及び装置を提供するこ
とを目的とする。In view of the above problems, the present invention can generate a high-density plasma of inductive coupling in a high vacuum, achieve a good processing speed, and achieve a good plasma distribution with an optimum plasma distribution. An object of the present invention is to provide a plasma processing method and apparatus capable of obtaining in-plane uniformity of processing and reducing the amount of products deposited on a dielectric plate or a vacuum vessel wall.
【0013】[0013]
【課題を解決するための手段】本願の第1発明のプラズ
マ処理方法は、真空容器内の電極上に基板を載置し、真
空容器内にガスを導入しつつ排気を行い、真空容器内を
適当な圧力に保ちながら基板と対向する誘電体板に沿っ
て配設した電磁誘導コイルに高周波電圧を印加し、真空
容器内にプラズマを発生させて基板を処理するプラズマ
処理方法において、電磁誘導コイルとして、誘電体板に
対する射影面積が誘電体板の全面積の50%以上85%
未満の平面状のコイルを用いることを特徴とする。According to a first aspect of the present invention, there is provided a plasma processing method in which a substrate is placed on an electrode in a vacuum vessel, and exhaust is performed while introducing gas into the vacuum vessel. A plasma processing method for applying a high-frequency voltage to an electromagnetic induction coil disposed along a dielectric plate facing a substrate while maintaining an appropriate pressure to generate plasma in a vacuum vessel and process the substrate. The projected area on the dielectric plate is 50% or more and 85% of the total area of the dielectric plate.
It is characterized in that less than two planar coils are used.
【0014】好適には、誘電体板及び真空容器の壁面を
150°C以上200°C未満に保持し、また貴金属を
含む積層膜が形成された基板を処理する。Preferably, the dielectric plate and the wall surface of the vacuum vessel are kept at 150 ° C. or more and less than 200 ° C., and the substrate on which the laminated film containing a noble metal is formed is processed.
【0015】また、本願の第2発明のプラズマ処理装置
は、ガス導入口及び排気口を有する真空容器と、真空容
器内の基板を載置するための電極と、電極と対向する位
置の真空容器壁面として設けられた誘電体板と、誘電体
板上に設置された電磁誘導コイルとを備えたプラズマ処
理装置において、電磁誘導コイルを、誘電体板に対する
射影面積が誘電体板の全面積の50%以上85%未満の
平面状のコイルにて構成したことを特徴とする。The plasma processing apparatus according to the second aspect of the present invention includes a vacuum vessel having a gas inlet and an exhaust port, an electrode for mounting a substrate in the vacuum vessel, and a vacuum vessel at a position facing the electrode. In a plasma processing apparatus provided with a dielectric plate provided as a wall surface and an electromagnetic induction coil provided on the dielectric plate, the electromagnetic induction coil has a projection area on the dielectric plate of 50% of the total area of the dielectric plate. % Or less and less than 85%.
【0016】好適には、電磁誘導コイルは多重の渦巻状
であり、また誘電体板及び真空容器の壁面の温度を制御
する手段を備える。Preferably, the electromagnetic induction coil is in the form of multiple spirals and includes means for controlling the temperature of the dielectric plate and the wall surface of the vacuum vessel.
【0017】本発明の上記構成によれば、誘導結合性の
高真空高密度プラズマにより、白金(Pt)等の貴金属
類を含む積層膜をエッチングする場合においても、良好
なエッチング速度を得ることができ、さらに電磁誘導コ
イルの誘電体板に対する射影面積が誘電体板の全面積の
50%以上85%未満であるため、コイルに印加した高
周波電圧により誘電体板に大きな負のセルフバイアスが
生じ、この負の電界で誘電体板表面でスパッタリングが
起こり、誘電体板に付着しようとする生成物を軽減する
ことができる。According to the above configuration of the present invention, a good etching rate can be obtained even when a laminated film containing a noble metal such as platinum (Pt) is etched by inductively coupled high-vacuum high-density plasma. Since the projected area of the electromagnetic induction coil with respect to the dielectric plate is 50% or more and less than 85% of the total area of the dielectric plate, a large negative self-bias is generated in the dielectric plate by the high frequency voltage applied to the coil. Sputtering occurs on the surface of the dielectric plate due to the negative electric field, so that products that are likely to adhere to the dielectric plate can be reduced.
【0018】さらに、誘電体板及び真空容器の温度を1
50°C以上200°C未満に制御することで、誘電体
板及び真空容器の側面に堆積する生成物の大幅な軽減が
可能となる。Further, the temperature of the dielectric plate and the vacuum vessel is set to 1
By controlling the temperature to 50 ° C. or more and less than 200 ° C., it is possible to significantly reduce products deposited on the side surfaces of the dielectric plate and the vacuum vessel.
【0019】また、多重の渦巻状コイル構成により最適
なプラズマ分布による良好なエッチングの面内均一性が
得られる。Further, the in-plane uniformity of the etching can be obtained with the optimum plasma distribution by the multiple spiral coil configuration.
【0020】[0020]
【発明の実施の形態】以下、本発明のプラズマ処理方法
及び装置の一実施形態について、図1〜図3を参照して
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the plasma processing method and apparatus of the present invention will be described below with reference to FIGS.
【0021】図1において、1は真空容器で、筒状体2
の上下の開口部を上方壁面としての誘電体板3と下方壁
面体4により封止したものであり、必要に応じて筒状体
2の側面に給排気孔等が設けられる。5は誘電体板3へ
の射影面積が80%になるような幅25mmでコイル数
4の多重渦巻状で平面状の電磁誘導コイルである。6は
誘電体板3を加熱するためのヒータユニット、7は真空
容器1の壁面を加熱するためのヒータユニットである。
8は下方壁面体4の内面に配置された電極、10は電極
8上に載置された基板、11は第1高周波電源、12は
第2高周波電源である。In FIG. 1, reference numeral 1 denotes a vacuum vessel,
The upper and lower openings are sealed by a dielectric plate 3 serving as an upper wall surface and a lower wall member 4, and a supply / exhaust hole or the like is provided on the side surface of the cylindrical body 2 as necessary. Reference numeral 5 denotes a multiple spiral and planar electromagnetic induction coil having a width of 25 mm and a number of coils of 4 so that the area projected onto the dielectric plate 3 becomes 80%. 6 is a heater unit for heating the dielectric plate 3, and 7 is a heater unit for heating the wall surface of the vacuum vessel 1.
Reference numeral 8 denotes an electrode arranged on the inner surface of the lower wall body 4, reference numeral 10 denotes a substrate mounted on the electrode 8, reference numeral 11 denotes a first high-frequency power supply, and reference numeral 12 denotes a second high-frequency power supply.
【0022】以上の構成において、真空容器1内に適当
なガスを導入しつつ排気し、真空容器1内を適当な圧力
を保ちながら、第1高周波電源11により電磁誘導コイ
ル5に高周波電圧を印加することにより、真空容器1内
にプラズマが発生し、基板10に対してプラズマ処理を
行なうことができる。なお、このとき電極8にも第2高
周波電源12より高周波電圧を印加すると、基板10に
到達するイオンエネルギーを制御することができる。In the above-described configuration, a high-frequency voltage is applied to the electromagnetic induction coil 5 by the first high-frequency power supply 11 while evacuating while introducing an appropriate gas into the vacuum vessel 1 and maintaining an appropriate pressure in the vacuum vessel 1. By doing so, plasma is generated in the vacuum chamber 1 and plasma processing can be performed on the substrate 10. At this time, when a high-frequency voltage is also applied to the electrode 8 from the second high-frequency power supply 12, the ion energy reaching the substrate 10 can be controlled.
【0023】次に、作用を詳細に説明する。真空容器1
内にCl2 ガスとO2 ガスをそれぞれ数sccmづつ導
入しつつ排気を行い、真空容器1内を8mTorrの圧
力に保ちながら第1高周波電源11より450W、第2
高周波電源12より400Wの電力を投入すると、真空
容器1内にプラズマが発生する。このプラズマ中にSi
ウェハ上に白金(Pt)が3000Å堆積された基板1
0を置き、エッチングした。この時の誘電体板3及び真
空容器1の壁面の温度は常温(20°C)である。Next, the operation will be described in detail. Vacuum container 1
The chamber is evacuated while introducing several sccm of Cl 2 gas and O 2 gas into the vacuum chamber, and 450 W from the first high frequency power supply 11 while maintaining the inside of the vacuum vessel 1 at a pressure of 8 mTorr.
When power of 400 W is supplied from the high frequency power supply 12, plasma is generated in the vacuum vessel 1. Si in this plasma
Substrate 1 in which platinum (Pt) was deposited on a wafer at 3000 °
0 and etched. At this time, the temperature of the dielectric plate 3 and the wall surface of the vacuum vessel 1 is room temperature (20 ° C.).
【0024】表1に本発明の上記実施形態と従来例(R
IE、ECR、MSCの各タイプの従来例を示す。)で
示したプラズマ処理装置における白金(Pt)のエッチ
ング速度と面内均一性の比較を示す。Table 1 shows the above embodiment of the present invention and a conventional example (R
Conventional examples of each type of IE, ECR, and MSC are shown. 3) shows a comparison between the etching rate of platinum (Pt) and in-plane uniformity in the plasma processing apparatus shown in FIG.
【0025】[0025]
【表1】 [Table 1]
【0026】表1から、本実施形態のプラズマ処理装置
は、従来例の高真空で高密度なプラズマが得られるMS
Cプラズマ処理装置やECRプラズマ処理装置と同様の
エッチング速度が得られることが分かる。また、エッチ
ングの面内均一性はプラズマ分布の調整が容易であるM
SCプラズマ処理装置や本実施形態の装置は良好な結果
が得られている。From Table 1, it can be seen that the plasma processing apparatus according to the present embodiment is capable of producing a high-density plasma with high vacuum in a conventional example.
It can be seen that an etching rate similar to that of the C plasma processing apparatus or the ECR plasma processing apparatus can be obtained. In addition, the in-plane uniformity of the etching is easy to adjust the plasma distribution.
Good results are obtained with the SC plasma processing apparatus and the apparatus of the present embodiment.
【0027】次に、本実施形態とMSCプラズマ処理装
置との、誘電体板および真空容器の壁面に付着する生成
物の堆積量及び分布を調査した。上記と同様のエッチン
グ条件で白金(Pt)を9000Å(ウェハ3枚)エッ
チングした。その調査結果を図2に示す。この結果から
従来例のMSCプラズマ処理装置より本実施形態のプラ
ズマ処理装置の方が誘電体板及び真空容器の壁面に付着
する生成物の堆積量が少ないことが分かる。Next, the deposition amount and distribution of products adhering to the dielectric plate and the wall surface of the vacuum vessel in the present embodiment and the MSC plasma processing apparatus were investigated. Under the same etching conditions as above, platinum (Pt) was etched at 9000 ° (three wafers). FIG. 2 shows the result of the investigation. From this result, it can be seen that the amount of products deposited on the dielectric plate and the wall surface of the vacuum vessel is smaller in the plasma processing apparatus of the present embodiment than in the conventional MSC plasma processing apparatus.
【0028】このことは、以下のようなメカニズムで説
明できると考えている。白金(Pt)等の貴金属をエッ
チングすると、プラズマ中に生成されたイオンによる化
学的な反応によるエッチングよりも、プラズマ中に生成
されたラジカル成分による物理的なエッチングの効果が
大きく、生成物は化学的に反応した物質よりも貴金属原
子が主成分となっている。そのため、従来例のプラズマ
処理装置では生成物が揮発して真空容器内から排気され
るよりも、上部誘電体板や真空容器の側壁に付着する方
が多くなることになる。一方、本実施形態のプラズマ処
理装置では、幅の広いコイルに印加した高周波電圧によ
り、誘電体板に大きな負のセルフバイアスが生じ、この
負の電界でイオンが加速されて誘電体板表面でスパッタ
リングが起こる。このため、上記のように誘電体板に付
着する生成物の堆積量を軽減することができる。It is believed that this can be explained by the following mechanism. When a noble metal such as platinum (Pt) is etched, the effect of physical etching by radical components generated in the plasma is larger than that by a chemical reaction by ions generated in the plasma, and the product is chemically etched. Noble metal atoms are the main component rather than the substance that has reacted. For this reason, in the conventional plasma processing apparatus, the amount of the product adhering to the upper dielectric plate and the side wall of the vacuum vessel is more than the rate of the product being volatilized and exhausted from the vacuum vessel. On the other hand, in the plasma processing apparatus of the present embodiment, a large negative self-bias is generated in the dielectric plate due to the high-frequency voltage applied to the wide coil, and the ions are accelerated by the negative electric field to cause sputtering on the surface of the dielectric plate. Happens. Therefore, it is possible to reduce the amount of products deposited on the dielectric plate as described above.
【0029】コイル面積が誘電体板への射影面積の50
%以下であると誘電体板に生じる負のセルフバイアスが
小さいためにスパッタリング効果が得られない。また、
85%以上になると反射電力が増大し、電力効率が低下
することがあり、場合によっては放電が起きないことも
ある。The coil area is 50 times the projected area on the dielectric plate.
% Or less, the sputtering effect cannot be obtained because the negative self-bias generated in the dielectric plate is small. Also,
If it exceeds 85%, the reflected power increases, the power efficiency may decrease, and in some cases, no discharge occurs.
【0030】次に、本実施形態の誘電体板および真空容
器の壁面に対する生成物の堆積量と温度との依存性につ
いて調査した。上記と同様のエッチング条件で、誘電体
板および真空容器の壁面の温度を20°C、75°C、
150°Cの3条件に設定し、それぞれの条件で白金
(Pt)を9000Å(ウェハ3枚)エッチングし、堆
積膜厚を測定した。結果を図3に示す。図3から、誘電
体板および真空容器の壁面を150°C以上に加温する
ことにより、生成物の堆積量を減少させる効果があるこ
とが分かる。但し、200°C以上にすると、弊害を生
じることになる。Next, the dependence of the deposition amount of the product on the wall surface of the dielectric plate and the vacuum vessel of the present embodiment and the temperature was investigated. Under the same etching conditions as above, the temperatures of the dielectric plate and the wall surface of the vacuum vessel were set to 20 ° C, 75 ° C,
Under three conditions of 150 ° C., platinum (Pt) was etched at 9000 ° (three wafers) under each condition, and the deposited film thickness was measured. The results are shown in FIG. From FIG. 3, it can be seen that heating the wall surface of the dielectric plate and the vacuum vessel to 150 ° C. or more has an effect of reducing the amount of deposited products. However, if the temperature is higher than 200 ° C., adverse effects will be caused.
【0031】以上の結果から分かるように、本実施形態
では従来例とほぼ同等のエッチング速度で、誘電体板お
よび真空容器の壁面に付着する生成物の堆積量は従来例
よりも少なくなり、非常に良好な結果が得られた。As can be seen from the above results, in the present embodiment, the deposition amount of the product adhering to the dielectric plate and the wall surface of the vacuum vessel is smaller than that of the conventional example at an etching rate substantially equal to that of the conventional example. Good results were obtained.
【0032】[0032]
【発明の効果】本発明のプラズマ処理方法及び装置によ
れば、以上の説明から明らかなように、誘導結合性の高
真空高密度プラズマにより良好な処理速度を得ることが
でき、さらに電磁誘導コイルの誘電体板に対する射影面
積が誘電体板の全面積の50%以上85%未満であるた
め、コイルに印加した高周波電圧により誘電体板に大き
な負のセルフバイアスが生じ、この負の電界で誘電体板
表面でスパッタリングが起こり、誘電体板に付着しよう
とする生成物を軽減することができる。According to the plasma processing method and apparatus of the present invention, as is apparent from the above description, a good processing speed can be obtained by the inductively coupled high-vacuum high-density plasma. Is less than or equal to 50% and less than 85% of the total area of the dielectric plate, a large negative self-bias is generated in the dielectric plate by the high frequency voltage applied to the coil, and the negative electric field Sputtering occurs on the surface of the body plate, and products that are likely to adhere to the dielectric plate can be reduced.
【0033】さらに、誘電体板及び真空容器の温度を1
50°C以上200°C未満に制御することで、誘電体
板及び真空容器の側面に堆積する生成物の大幅な軽減が
可能となる。Further, the temperature of the dielectric plate and the vacuum vessel is set to 1
By controlling the temperature to 50 ° C. or more and less than 200 ° C., it is possible to significantly reduce products deposited on the side surfaces of the dielectric plate and the vacuum vessel.
【0034】特に、白金等の貴金属類を含む積層膜をプ
ラズマ処理する場合には効果的である。In particular, it is effective when a laminated film containing a noble metal such as platinum is subjected to plasma treatment.
【0035】また、多重の渦巻状コイル構成により最適
なプラズマ分布による良好な処理の面内均一性が得られ
る。Further, the in-plane uniformity of the excellent processing can be obtained by the optimum plasma distribution by the multiple spiral coil configuration.
【図1】本発明のプラズマ処理装置の一実施形態の概略
構成を一部破断して示した斜視図である。FIG. 1 is a perspective view showing a schematic configuration of an embodiment of a plasma processing apparatus according to the present invention, partially cut away.
【図2】同実施形態と従来例における誘電体板および真
空容器の壁面に付着する生成物の堆積量及び分布の比較
図である。FIG. 2 is a comparison diagram of the amount of deposition and distribution of products adhering to a dielectric plate and a wall surface of a vacuum vessel in the embodiment and a conventional example.
【図3】同実施形態における誘電体板および真空容器の
壁面に付着する生成物の堆積量と温度との依存性を示す
図である。FIG. 3 is a diagram showing a dependency between a deposition amount of a product adhered to a dielectric plate and a wall surface of a vacuum vessel and temperature in the same embodiment.
【図4】従来例のプラズマ処理装置の概略構成を示す斜
視図である。FIG. 4 is a perspective view showing a schematic configuration of a conventional plasma processing apparatus.
【図5】他の従来例のプラズマ処理装置の概略構成を示
す斜視図である。FIG. 5 is a perspective view showing a schematic configuration of another conventional plasma processing apparatus.
1 真空容器 3 誘電体板 5 電磁誘導コイル 6 ヒータユニット 7 ヒータユニット 8 電極 10 基板 11 第1高周波電源 DESCRIPTION OF SYMBOLS 1 Vacuum container 3 Dielectric plate 5 Electromagnetic induction coil 6 Heater unit 7 Heater unit 8 Electrode 10 Substrate 11 1st high frequency power supply
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平8−227878(JP,A) 特開 平8−138888(JP,A) 特開 平8−83696(JP,A) 特開 平9−232282(JP,A) 特開 平9−237776(JP,A) 特開 平9−143366(JP,A) 特開 平7−211702(JP,A) 特開 平7−161488(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/3065 C23F 4/00 H01L 21/205 H05H 1/46 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-8-227878 (JP, A) JP-A 8-138888 (JP, A) JP-A 8-83696 (JP, A) JP-A 9-98 232282 (JP, A) JP-A-9-237776 (JP, A) JP-A-9-143366 (JP, A) JP-A-7-211702 (JP, A) JP-A-7-161488 (JP, A) (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/3065 C23F 4/00 H01L 21/205 H05H 1/46
Claims (6)
空容器内にガスを導入しつつ排気を行い、真空容器内を
適当な圧力に保ちながら基板と対向する誘電体板に沿っ
て配設した電磁誘導コイルに高周波電圧を印加し、真空
容器内にプラズマを発生させて基板を処理するプラズマ
処理方法において、電磁誘導コイルとして、誘電体板に
対する射影面積が誘電体板の全面積の50%以上85%
未満の平面状のコイルを用いることを特徴とするプラズ
マ処理方法。1. A substrate is placed on an electrode in a vacuum vessel, exhaust is performed while gas is introduced into the vacuum vessel, and along a dielectric plate facing the substrate while maintaining the inside of the vacuum vessel at an appropriate pressure. In a plasma processing method in which a high-frequency voltage is applied to an electromagnetic induction coil disposed to generate plasma in a vacuum vessel to process a substrate, a projected area of the dielectric plate as an electromagnetic induction coil is the entire area of the dielectric plate. 50% to 85% of
A plasma processing method characterized by using a coil having a planar shape of less than.
C以上200°C未満に保持することを特徴とする請求
項1記載のプラズマ処理方法。2. The dielectric plate and the wall surface of the vacuum vessel are set at 150 °.
The plasma processing method according to claim 1, wherein the temperature is maintained at not less than C and less than 200 ° C.
処理することを特徴とする請求項1又は2記載のプラズ
マ処理方法。3. The plasma processing method according to claim 1, wherein the substrate on which the laminated film containing a noble metal is formed is processed.
と、真空容器内の基板を載置するための電極と、電極と
対向する位置の真空容器壁面として設けられた誘電体板
と、誘電体板上に設置された電磁誘導コイルとを備えた
プラズマ処理装置において、電磁誘導コイルを、誘電体
板に対する射影面積が誘電体板の全面積の50%以上8
5%未満の平面状のコイルにて構成したことを特徴とす
るプラズマ処理装置。4. A vacuum vessel having a gas inlet and an exhaust port, an electrode for mounting a substrate in the vacuum vessel, a dielectric plate provided as a vacuum vessel wall at a position facing the electrode, In a plasma processing apparatus having an electromagnetic induction coil installed on a body plate, a projected area of the electromagnetic induction coil with respect to the dielectric plate is 50% or more of the total area of the dielectric plate.
A plasma processing apparatus comprising less than 5% of a planar coil.
とを特徴とする請求項4記載のプラズマ処理装置。5. The plasma processing apparatus according to claim 4, wherein the electromagnetic induction coil has a multiple spiral shape.
御する手段を備えたことを特徴とする請求項4記載のプ
ラズマ処理装置。6. The plasma processing apparatus according to claim 4, further comprising means for controlling the temperature of the dielectric plate and the wall surface of the vacuum vessel.
Priority Applications (1)
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JP31871195A JP3220631B2 (en) | 1995-12-07 | 1995-12-07 | Plasma processing method and apparatus |
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JP31871195A JP3220631B2 (en) | 1995-12-07 | 1995-12-07 | Plasma processing method and apparatus |
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JP3220631B2 true JP3220631B2 (en) | 2001-10-22 |
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ID=18102135
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JP7240958B2 (en) * | 2018-09-06 | 2023-03-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
WO2020050071A1 (en) * | 2018-09-06 | 2020-03-12 | 東京エレクトロン株式会社 | Plasma processing device |
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