JP3212566B2 - Thin film magnetic head having magnetoresistive thin film magnetic element and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film magnetic head having a magnetoresistive thin-film magnetic element which exhibits a large resistance change according to a change in an external magnetic field.

[0002]

2. Description of the Related Art FIG. 30 is a perspective view showing an example of a conventional thin film magnetic head. Thin-film magnetic head 150 of this example
Is a floating type mounted on a hard disk device or the like. The slider 151 of the thin-film magnetic head 150
In FIG. 30, the side indicated by reference numeral 155 is the leading side facing the upstream side in the moving direction of the disk surface, and
The side indicated by 56 is the trailing side. This slider 1
On the surface facing the magnetic disk 51, a rail-shaped AB
S surface (air bearing surface: floating surface of rail) 151
a, 151a, 151b and the air groove 151c,
151c are formed. And this slider 1
A magnetic core 157 is provided on the end surface 151d of the trailing side 51.

The magnetic core portion 157 of the thin film magnetic head shown in this example has a composite magnetic core structure having the structure shown in FIGS. 31 and 32, and has an MR head (magnetic resistance) A read head h1 using an effect type thin film magnetic element) and an inductive head (write head) h2 are stacked.

[0004] The MR head h1 of this example includes a slider 15
A lower gap layer 164 is provided on a lower shield layer 163 made of a magnetic alloy and formed at one of the trailing side ends. Then, on the lower gap layer 164,
A magnetoresistive thin-film magnetic element 165 is stacked.
An upper gap layer 166 is formed on the magnetoresistive element layer 165, and an upper shield layer 167 is formed thereon. The upper shield layer 167 is also used as a lower core layer of the inductive head h2 provided thereon.

Next, in the inductive head h2, a gap layer 174 is formed on a lower core layer which is also used as the upper shield layer 167, and is patterned so as to have a planar spiral shape thereon. Coil 176 is formed. The coil 176 is surrounded by an insulating material layer 177. The upper core layer 178 formed on the insulating material layer 177 has its tip 178a at the ABS 151
b, the lower core layer 167 is opposed to the lower core layer 167 with a small gap therebetween, and its base end 178b is magnetically connected to the lower core layer 167. Further, a protective layer 179 made of alumina or the like is provided on the upper core layer 178.

The MR head h1 having the above-described structure changes the resistance of the magnetoresistive element layer 165 in accordance with the presence or absence of a minute leakage magnetic field from a magnetic recording medium such as a hard disk, and reads the change in resistance to read the magnetic resistance. This is for reading the recorded contents of a recording medium. Next, in the inductive head h2 having the above-described structure, a recording current is supplied to the coil 176, and a recording current is supplied from the coil 176 to the core layer. And the inductive head h2 is:
A magnetic signal is recorded on a magnetic recording medium such as a hard disk by a leakage magnetic field from the tip of the lower core layer 167 and the upper core layer 178 at the magnetic gap G.

[0007]

In the magnetoresistive thin-film magnetic element 165 used for the MR head h1 of the thin-film magnetic head having the above-described structure, generally, the magnetic layer whose magnetization is pinned and the non-magnetic conductive layer are used. It has a multilayer structure in which a layer and a free magnetic layer whose magnetization is rotatable are stacked. Further, in order to optimize the operation of this type of magnetoresistive thin-film magnetic element 165, the free magnetic layer is formed into a single magnetic domain in order to suppress Barkhausen noise caused by forming a large number of magnetic domains. There is a need for a bias to

Conventionally, in order to apply this kind of bias, a bias layer made of a hard magnetic material is provided on both sides of a magnetoresistive thin film magnetic element 165, and an induced magnetic field utilizing leakage magnetic flux from this bias layer is provided. Although the free magnetic layer is made into a single magnetic domain using anisotropy, research has been conducted on a better bias applying means for making the free magnetic layer into a single magnetic domain in addition to the means using this hard magnetic material bias layer. Being in a situation.

In view of the above circumstances, the present invention provides a thin-film magnetic head provided with a magneto-resistance effect type thin-film magnetic element having a magnetic layer exhibiting a magneto-resistance effect. It is an object of the present invention to provide a thin-film magnetic head having a magnetoresistive thin-film magnetic element in which an isotropic magnetic field is within a preferable range and a bias for forming a single magnetic domain is favorably applied.

[0010]

SUMMARY OF THE INVENTION The present invention provides a magnetoresistive thin film magnetic element having a laminated body provided with a free magnetic layer and having an electric resistance that changes in response to a change in an external magnetic field. The underlayer is formed on the substrate by depositing particles generated from the target at the same time that the underlayer moves the substrate relative to the target, and the particles from the target are formed when the underlayer is formed. In the direction that intersects with the
The texture is formed, and this texture
The track width direction of the free magnetic layer of the magnetoresistive thin film device is characterized by comprising aligned countercurrent.

According to the present invention, there is provided a magnetoresistive thin film magnetic element having a laminated body having a free magnetic layer and having an electric resistance which changes in response to a change in an external magnetic field, is formed on a base layer of a substrate. Particles generated from the target
A texture formed by the deposition is formed, and the texture of the magnetoresistive thin film magnetic element is oriented in the direction of the texture .
It is characterized in that the track width direction of the free magnetic layer is aligned.

The present invention provides an antiferromagnetic layer, a fixed magnetic layer formed in contact with the antiferromagnetic layer and having a magnetization fixed in a certain direction by an exchange coupling magnetic field generated by the antiferromagnetic layer, A magnetoresistive thin-film magnetic element comprising a free magnetic layer formed in a layer with a non-magnetic conductive layer interposed therebetween and having magnetization aligned in a direction intersecting with the magnetization direction of the fixed magnetic layer,
Along with being provided on a base layer formed on the substrate, the base layer is formed on the substrate by deposition of particles generated from the target while moving the substrate relative to the target, and The texture should not be formed in a direction that intersects with the direction in which the substrate is passed through the deposition area of the particles from the target when the underlayer is formed.
That is , the track width direction of the free magnetic layer of the magnetoresistive thin film magnetic element is aligned with the direction of the texture .

In the structure of the present invention, an antiferromagnetic layer, a fixed magnetic layer formed in contact with the antiferromagnetic layer and having a magnetization fixed in a certain direction by an exchange coupling magnetic field generated by the antiferromagnetic layer; A magnetoresistive thin-film magnetic element comprising a free magnetic layer formed on a magnetic layer via a nonmagnetic conductive layer and having a magnetization aligned in a direction crossing the magnetization direction of the fixed magnetic layer is formed on a substrate. Provided on the underlayer, and the particles generated from the target on the underlayer .
A texture formed by deposition may be formed, and the track width direction of the free magnetic layer may be aligned in the direction of the texture.

In the above-described invention, the antiferromagnetic layer may be made of an X-Mn alloy or a Pt-Mn-X 'alloy (where X is a member selected from the group consisting of Pt, Pd, Ir, Rh, and Ru). X ′ represents one or more selected, and X ′ is Pd,
One or more selected from Ir, Rh, Ru, Au, Ag, Cr, and Ni. ) May be used. PtMn alloys include NiMn alloys and Fe, which are conventionally used as antiferromagnetic layers.
It is a preferable material because it has excellent corrosion resistance, a high blocking temperature, and a large exchange coupling magnetic field (exchange anisotropic magnetic field) as compared with a Mn alloy or the like.

In the above-described invention, it is preferable that the texture of the underlayer is formed in a direction perpendicular to the direction in which the substrate is passed through the deposition area of the particles from the target when the underlayer is formed. Next, in the configuration of the invention described above, a dual-type structure in which a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are formed on both sides in the thickness direction of the free magnetic layer, respectively, may be used. In the present invention, at least one of the pinned magnetic layer and the free magnetic layer is divided into two via a nonmagnetic layer, and the divided layers are in a ferrimagnetic state in which magnetization directions are antiparallel to each other. A characteristic structure may be used. Further, in the present invention, it is preferable that a bias layer for aligning the magnetization direction of the free magnetic layer is formed on both sides of the laminate in which the antiferromagnetic layer, the nonmagnetic conductive layer, and the free magnetic layer are stacked.

The present process then fixed magnetic and antiferromagnetic layer
A method of manufacturing a thin-film magnetic head by forming a magnetoresistive thin-film magnetic element having a magnetic layer, a non-magnetic conductive layer, and a free magnetic layer on an underlayer of a substrate. When forming the underlayer by depositing the underlayer, the underlayer is formed while moving the substrate in the deposition region of the sputtered particles , and intersects the moving direction of the substrate.
An underlayer having texture in the direction is formed.
The antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic conductive layer, and the
Forming a magnetoresistive thin-film magnetic element with a Lee magnetic layer
And, wherein the align track width direction of the free magnetic layer of the magnetoresistive thin film element in the direction of the texture. Further, the method of the present invention is characterized in that the free magnetic layer is provided with induced magnetic anisotropy by forming the free magnetic layer while applying a magnetic field in the track width direction.

In the method of the present invention, after forming the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer, the antiferromagnetic layer performs an annealing process for applying an exchange coupling magnetic field to the pinned magnetic layer. It is characterized by the following. In the method of the present invention, after the annealing treatment of the antiferromagnetic layer for applying the exchange coupling magnetic field, a magnetic field is applied in the track width direction to anneal the free magnetic layer, thereby imparting induced magnetic anisotropy to the free magnetic layer. A method characterized by the above may be used.

In the case where particles coming from a target are deposited on a substrate to form an underlayer, film formation is performed while moving the substrate with respect to a region where particles from the target are deposited.
In a direction substantially perpendicular to the direction of movement of the substrate moving with respect to the particle deposition region, the effect of the directional incidence of sputtered particles becomes stronger, and streaky irregularities called textures are generated on the surface of the underlayer. The other layer formed on the underlayer having the texture with the uneven streaks controls the orientation of the crystal in the direction of the texture according to the texture, so that the magnetization of the free magnetic layer follows the texture The easy axis is easily oriented. As a result, by applying a bias from the bias layer in the texture direction of the underlayer, the magnetic domains of the free magnetic layer can be easily aligned, and the single magnetic domain of the free magnetic layer can be smoothly formed. Therefore, a bias is easily applied to the free magnetic layer of the magnetoresistive thin film magnetic element, and a smooth resistance change with little Barkhausen noise is easily obtained.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a thin-film magnetic head according to the present invention will be described in detail with reference to the drawings. First Embodiment FIG. 1 is a sectional view showing an example of a substrate and a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a first embodiment of the present invention. The overall structure of the thin-film magnetic head of the first embodiment is the same as that of the thin-film magnetic head 150 having the structure described above with reference to FIGS. A resistance effect element is different from an underlayer provided thereunder. Therefore, in the structure of the first embodiment shown in FIG. 1, the substrate, the underlayer, and the magnetoresistive thin-film magnetic element will be described, and the other structures of the slider and the inductive head (write head) will be described. FIG.
Since the structure is the same as that shown in FIG. 32, the description of those portions will be omitted. The thin-film magnetic head is provided at a trailing end of a flying slider provided in a hard disk device, and detects a recording magnetic field of a hard disk or the like. The moving direction of the magnetic recording medium such as a hard disk is the Z direction in FIG. 1, and the direction of the leakage magnetic field from the magnetic recording medium is the Y direction in FIG. It should be noted that the configuration of the slider portion of the thin-film magnetic head and the configuration of the inductive head include various configurations in addition to the configurations shown in FIGS. 30 to 32. Therefore, the configurations in FIGS. It is a matter of course that the configuration described below may be employed for the slider and the inductive head having the structures.

In this embodiment, alumina (Al ₂ O ₃ ) is placed on a substrate K made of a hard material made of ceramic or Si such as Al ₂ O ₃ —TiC (trade name: Altic).
A protective layer S1 made of an insulator such as
A lower shield layer S2 is formed thereon, and alumina (Al ₂ O ₃ ), Al—N, Ta ₂ O ₅ is formed on the lower shield layer S2.
An underlayer S3 made of an insulating material such as the above is formed, and a magnetoresistive thin-film magnetic element MR1 is formed on the underlayer S3.

The magnetoresistance effect type thin film magnetic element M of this embodiment
R1 is an example of a so-called bottom type single spin valve, and has a cross section in which a base film 1, an antiferromagnetic layer 2, a fixed magnetic layer 3, a nonmagnetic conductive layer 4, a free magnetic layer 5, and a protective layer 7 are laminated. The base has a trapezoidal shape, and a hard bias layer (hard magnetic layer) 6 and a conductive layer 8 are laminated on the left and right inclined portions, respectively.
By magnetizing in the direction, the magnetization of the free magnetic layer 5 is aligned in the X direction as shown by the arrow in FIG.

Here, the pinned magnetic layer 3 is
By performing annealing (heat treatment) in a magnetic field, an exchange coupling magnetic field (exchange anisotropic magnetic field) is generated at the interface between the fixed magnetic layer 3 and the antiferromagnetic layer 2. As shown in FIG.
The direction is fixed.

In the laminated structure, for example, the underlayer 1 is made of a non-magnetic material such as Ta, and the fixed magnetic layer 3 is made of a Co film, a NiFe alloy film, a CoNiFe alloy film, a CoF
The free magnetic layer 5 is formed of a NiFe alloy film, the nonmagnetic conductive layer 4 is formed of a nonmagnetic conductive film such as Cu, and the protective layer 7 is formed of a nonmagnetic film such as Ta.

In the present invention, the antiferromagnetic layer 2
Is preferably formed of a PtMn alloy. P
The tMn alloy has excellent corrosion resistance, a high blocking temperature, and a large exchange coupling magnetic field (exchange anisotropic magnetic field) as compared with a NiMn alloy, a FeMn alloy, or the like which has been conventionally used as an antiferromagnetic layer. In the present invention, the PtM
X-Mn (where X is Pd, Ir,
An alloy of any one of Rh and Ru, or two or more elements), or Pt-Mn-X '(where X' is any one of Pd, Ir, Rh, Ru, Au, Ag or (Which is two or more elements). The antiferromagnetic layer 2 has an effect of pinning the magnetization direction of the adjacent fixed magnetic layer 3 by the exchange coupling magnetic field and directing the magnetization direction to the Y direction in FIG. Further, in the binary X-Mn alloy, the content of the element X is X = 37 to 63 atomic% (3
7 atomic% or more and 63 atomic% or less; unless otherwise specified, the upper and lower limits of the numerical range indicated by means the following and above. ) Is preferable, and the range of X = 44 to 57 atomic% is more preferable. Further, the ternary Pt-Mn-
In the X ′ alloy, the content of Pt is preferably in the range of 37 to 63 atomic% (37 atomic% or more and 63 atomic% or less),
The content of the element X 'is preferably in the range of X' = 0.2 to 10 atomic%. In the ternary Pt-Mn-X 'alloy, the content of Pt + X' is more preferably in the range of 44 to 57 atomic%. The antiferromagnetic layer 2 that generates a large exchange coupling magnetic field can be obtained by annealing the alloy having an appropriate composition range, and particularly when the alloy is a Pt-Mn alloy, the antiferromagnetic layer exceeds 800 (Oe). An excellent antiferromagnetic layer 2 having an exchange coupling magnetic field and having a very high blocking temperature of 380 ° C. at which the exchange coupling magnetic field is lost can be obtained.

Next, the underlayer S3 is, in one example,
It is formed by a substrate revolving type sputtering apparatus whose schematic configuration is shown in FIG. The substrate revolving type sputtering apparatus is configured so that a plurality of original substrates K1 can be placed on a rotary type transporting apparatus (rotary table or the like) H as schematically shown in FIG. The targets T are arranged on the upper surface side of the substrate with a predetermined distance therebetween, and the entirety of the targets T is provided inside the vacuum chamber, and the particles emitted from the targets T are transported to a position facing the targets T.
This is an apparatus capable of forming a desired layer according to the composition of the target on the original substrate K1 by depositing on the substrate. Various mechanisms are known for generating the constituent particles of the target T and depositing them on the original substrate K1, but are not particularly limited. A commonly known sputter device structure such as a sputter device structure that generates constituent particles by applying a voltage, or an ion beam sputter device structure that strikes constituent particles of a target T using an ion beam may be appropriately applied. Absent.

In the sputtering apparatus shown in FIG. 2, only the positional relationship between the target T and the transporting apparatus H is shown, and a device for generating sputter particles or a vacuum chamber is omitted. What is important in the sputtering apparatus shown in FIG. 2 is that an orientation flat portion formed on the original substrate K1 (a linear cutout portion provided on the outer periphery of a disk-shaped substrate to indicate the crystal orientation of the substrate, etc.) And (2) passing the sputtered particle deposition region near the target T in a state where the OF is located on the front side in the transport direction of the original substrate K1 by the transport device H. Here, the original substrate K1 is placed from the orientation flat portion OF side with respect to the sputter particle deposition region.
Is introduced into the deposition region of the sputtered particles, and after the particles are deposited, the original substrate K1 is derived from the sputtered particle deposition region with the orientation flat portion OF side as the head.
The direction parallel to the orientation flat portion OF of the original substrate K1 due to the directional incidence of the sputtered particles flying on the original substrate K1 as shown by arrows in FIG. Are formed on the original substrate K1. In this texture 170, irregularities of about 0.5 to 50 nm are extended in a linear streak.
Shows a cross-sectional structure of the original substrate K1 provided with the texture 170 when cut in a direction perpendicular to the orientation flat portion OF.

In the present embodiment, the texture 170 is formed so that its length direction is aligned in the direction for aligning the magnetization of the free magnetic layer 5 shown in FIG. 1, that is, in parallel to the X direction in FIG. In other words, since the width of the stacked body along the X direction in FIG. 1 is the track width Tw, the textures 170 of the underlying layer S3 are aligned parallel or almost parallel to the track width direction. It is preferable that the texture 170 of the underlayer S3 and the track width direction be completely parallel. However, even if these angles are deviated by several degrees as long as the resistance change is not adversely affected as a magnetoresistive element. Absent. Here, usually, in order to manufacture a plurality of thin film magnetic heads from the original substrate K1, a necessary number of layers are deposited on the original substrate K1 by a thin film forming method such as sputtering, and a plurality of layers are planarly formed on the original substrate K1. By forming the thin film magnetic head element of the above, cutting out the original substrate K1 for each thin film magnetic head element together with a part of the original substrate K1, and processing the part of the cut out original substrate K1 as a slider,
Simultaneously with the cutting of the slider, a thin film magnetic head having the magnetoresistive thin film magnetic element MR1 having the structure shown in FIG. 1 on the slider is obtained. In addition, the protective layer S1 and the lower shield layer S2 formed on the original substrate K1 in the above-described process can be formed using the substrate revolving type sputtering apparatus shown in FIG. It can be used to form a film. Further, the sputtering apparatus used for forming the magnetoresistive thin-film magnetic element MR1 formed on the underlayer S3 may be used, or a substrate fixed type or substrate revolving type sputtering apparatus may be used. No problem.

For this reason, in the case where a large number of thin-film magnetic heads are cut out from the original substrate K1, a part of the extracted original substrate K constitutes the substrate K shown in FIG.
Therefore, the direction of the texture 170 of the underlying layer S3 on the original substrate K1 remains on the upper surface side of the underlying layer S3 shown in FIG. 1, and the direction is oriented in the X direction of FIG. The underlayer 1, antiferromagnetic layer 2, pinned layer 3, nonmagnetic conductive layer 4, free magnetic layer 5, and protective layer 7 are formed on the underlayer S3 on which the texture is formed as described above. When the structure in which the type thin film magnetic element MR1 is formed is employed, the free magnetic layer 5 is generated such that the direction of the easy axis of the free magnetic layer 5 is along the direction of the texture 170. Since the induced magnetic anisotropy of the magnetic layer 5 is provided, the direction of the magnetization of the free magnetic layer 5 is easily oriented in the X direction in FIG. In order to facilitate understanding, the original substrate K1 and the magnetoresistive thin-film magnetic element MR1
FIG. 3 shows that the actual magnetoresistive thin-film magnetic element MR1 is a laminate of thin films having a thickness of several tens to several hundreds of degrees, and therefore is much smaller than that shown in FIG. In FIG. 3, the magnetoresistive thin film magnetic element MR1 is shown enlarged on the original substrate K1.

In the magnetoresistive thin film magnetic element MR 1 shown in FIG. 1, a sense current is supplied from the conductive layer 8 to the free magnetic layer 5, the nonmagnetic conductive layer 4 and the fixed magnetic layer 3. When a magnetic field is applied from the recording medium in the Y direction shown in FIG. 1, the magnetization of the free magnetic layer 5 changes from the X direction shown in the figure to the Y direction, and the nonmagnetic conductive layer 4 and the free magnetic layer 5
The scattering of spin-dependent conduction electrons occurs at the interface between the magnetic layer and the nonmagnetic conductive layer 4 and the pinned magnetic layer 3, thereby changing the electrical resistance and detecting a leakage magnetic field from the recording medium. At this time, the magnetization direction of the fixed magnetic layer 3 is fixed by the anisotropic magnetic field by the antiferromagnetic layer 2, but since the magnetization direction of the free magnetic layer 5 can be rotated, the leakage magnetic field from the magnetic recording medium is reduced. As a result of the action, the direction of magnetization of the free magnetic layer 5 rotates, resulting in a change in magnetoresistance. In this case, in order to rotate the magnetization of the free magnetic layer 5 smoothly, the free magnetic layer 5 is given uniaxial anisotropy in the X direction of FIG. If the free magnetic layer 5 is provided with uniaxial anisotropy along the direction of the texture 170 of the underlayer S3, a smooth resistance change without Barkhausen noise can be easily obtained. Become. Also,
When a bias is applied to the free magnetic layer 5 by the hard bias layer 6, the bias can be applied smoothly, and as a result, the rotation of the magnetization of the free magnetic layer 5 becomes smooth.

In FIG. 1, the fixed magnetic layer 3 and the free magnetic layer 5 are respectively provided as a single-layer structure above and below the non-magnetic conductive layer 4 in the thickness direction, but they may be formed as a multi-layer structure. . The mechanism showing the giant magnetoresistance change is due to spin-dependent scattering of conduction electrons generated at the interface between the nonmagnetic conductive layer 4, the pinned magnetic layer 3, and the free magnetic layer 5. Since the Co layer can be exemplified as a combination having a large spin-dependent scattering, when the pinned magnetic layer 3 is formed of a material other than Co, the portion of the pinned magnetic layer 3 on the nonmagnetic conductive layer 4 side is shown by a two-dot chain line in FIG. The portion of the free magnetic layer 5 on the side of the nonmagnetic conductive layer 4 is formed as a thin C layer 3a as shown by a two-dot chain line in FIG.
It may be composed of the o layer 5a.

Next, in the first embodiment, a texture is formed parallel to the orientation flat portion OF, and the free magnetic layer 5 of the magnetoresistive thin film magnetic element MR1 is aligned with the direction of the texture in the track width direction.
However, if a texture is formed in a direction perpendicular to the orientation flat portion OF, and the track width direction of the free magnetic layer 5 is aligned with the texture in this direction to form the magnetoresistive thin film magnetic element MR1, An effect equivalent to that of the first embodiment can be obtained. This is due to the fact that the directions of the induced magnetic anisotropy of the free magnetic layer are aligned in accordance with only the texture irrespective of the substrate crystal orientation.

Second Embodiment FIG. 6 is a sectional view showing an example of a substrate and a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a second embodiment of the present invention. The overall structure of the thin-film magnetic head according to the second embodiment is similar to that of the thin-film magnetic head 150 having the structure described above with reference to FIGS. The resistive thin-film magnetic element MR2 is different from the underlayer provided thereunder. Therefore, in the structure of the second embodiment shown in FIG. 6, the substrate, the underlayer, the magnetoresistive thin-film magnetic element MR2 will be described, and the other structures of the slider portion and the inductive head (write head) will be described. Will not be described. Further, in the structure of the second embodiment shown in FIG. 6, the substrate and the underlayer are omitted, but the structure of the substrate and the underlayer is the same as the structure of the first embodiment shown in FIG. Detailed description is omitted.

The structure of the second embodiment differs from the structure of the first embodiment described above in the structure of the magnetoresistive thin film magnetic element MR2. The magnetoresistive thin-film magnetic element MR2 of this embodiment has a so-called top-type single spin valve structure, and includes a base film 1, a free magnetic layer 5, a nonmagnetic conductive layer 4, and a fixed magnetic layer in order from the bottom in FIG. 3, the anti-ferromagnetic layer 2, and the protective layer 7 have a trapezoidal cross section, and a hard bias layer 6 and a conductive layer 8 are laminated on both left and right inclined portions, respectively. Are magnetized in the X direction in FIG. 1 so that the magnetization of the free magnetic layer 5 is aligned in the X direction as shown by the arrow in FIG.

The constituent materials of the underlayer 1, the free magnetic layer 5, the nonmagnetic conductive layer 4, the fixed magnetic layer 3, and the protective layer 7 of the second embodiment are the same as those of the first embodiment. The materials constituting the antiferromagnetic layer 5 are the same, but their preferred composition ranges are slightly different. In the binary X-Mn alloy constituting the antiferromagnetic layer 5, the content of the element X is X = 37 to
A range of 63 at% (37 at% or more and 63 at% or less) is preferable, but a range of X = 47 to 57 at% is more preferable. Further, in the ternary Pt-Mn-X 'alloy, the content of Pt is preferably in the range of 37 to 63 atomic%, and the content of element X' is in the range of X '= 0.2 to 10 atomic%. Is preferred. In the ternary Pt-Mn-X 'alloy, the content of Pt + X' is more preferably in the range of 47 to 57 atomic%.

Also in the structure of the second embodiment, the orientation of the texture of the underlayer of the substrate is aligned with the direction of the magnetization of the free magnetic layer 5 (aligned in the X direction of FIG. 6), so that the free effect of the texture 170 is achieved. Since the induced magnetic anisotropy of the magnetic layer 5 is provided, the direction of the magnetization of the free magnetic layer 5 is easily oriented in the X direction in FIG. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layer 5 can be adjusted to a preferable range.

Third Embodiment FIG. 7 is a sectional view showing an example of a substrate and a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a third embodiment of the present invention. The overall structure of the thin-film magnetic head according to the third embodiment is similar to that of the thin-film magnetic head 150 having the structure described above with reference to FIGS. The resistive thin-film magnetic element is different from an underlayer provided thereunder. Therefore, in the structure of the third embodiment shown in FIG. 7, the substrate, the underlayer, and the magnetoresistive thin film magnetic element will be described, and the other structures of the slider portion and the inductive head (write head) will be described. Description is omitted. Further, in the structure of the third embodiment shown in FIG. 7, the substrate and the underlayer are omitted, but the structure of the substrate and the underlayer is equivalent to the structure of the first embodiment shown in FIG. Detailed description is omitted.

The structure of the third embodiment differs from the structure of the first embodiment described above in the structure of the magnetoresistive thin film magnetic element MR3. The magnetoresistive thin-film magnetic element MR3 of this embodiment has a so-called dual-type spin valve structure, and includes a base film 1, an antiferromagnetic layer 2, a fixed magnetic layer 3, a nonmagnetic conductive layer 4, It has a trapezoidal cross section in which a free magnetic layer 5, a nonmagnetic conductive layer 4, a pinned magnetic layer 3, an antiferromagnetic layer 2, and a protective layer 7 are laminated, and a hard bias layer 6 and a conductive layer The hard bias layer 6 is magnetized in the X direction in FIG. 1 so that the magnetization of the free magnetic layer 5 is aligned in the X direction as shown by the arrow in FIG.

Underlayer 1 and pinned magnetic layer 3 of the third embodiment
The constituent materials of the nonmagnetic conductive layer 4, the free magnetic layer 5, and the protective layer 7 are the same as those in the first embodiment. The materials constituting the antiferromagnetic layer 2 are also the same.

Also in the structure of the third embodiment, the orientation of the texture of the underlayer of the substrate is aligned with the direction of the magnetization of the free magnetic layer 5, so that the induced magnetic anisotropy of the free magnetic layer 5 is obtained by the shape effect of the texture 170. , The direction of magnetization of the free magnetic layer 5 is easily turned in the X direction in FIG. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layer 5
Can be adjusted to a preferable range.

Fourth Embodiment FIG. 8 is a diagram schematically showing an example of an underlayer S3 and a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a fourth embodiment of the present invention. The overall structure of the thin-film magnetic head according to the fourth embodiment is similar to that of the thin-film magnetic head 150 having the structure described above with reference to FIGS.
The magnetoresistive thin-film magnetic element provided in the head h1 is different from the underlying layer provided thereunder. Therefore, in the structure of the fourth embodiment shown in FIG. 8, the substrate, the underlayer, and the magnetoresistive thin film magnetic element will be described, and the other structures of the slider and the inductive head (write head) will be described. Description is omitted.
Further, in the structure of the third embodiment shown in FIG. 8, the substrate portion is omitted, but the structure of the substrate portion is the same as the structure of the first embodiment shown in FIG. I do.

The magnetoresistive thin film magnetic element M shown in FIG.
R4 is a so-called bottom type single spin-valve thin film magnetic element in which an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, and a free magnetic layer are formed one by one, and the antiferromagnetic layer is provided on the bottom side. The seed, the lowest layer formed,
A base film 10 made of a nonmagnetic material such as Ta;
The structure is such that a base layer S3 on the substrate side is provided under the base film 10. 8, an antiferromagnetic layer 11 is formed on the underlayer 10, and a first fixed magnetic layer 12 is formed on the antiferromagnetic layer 11. Then, as shown in FIG. 8, the non-magnetic intermediate layer 1 is formed on the first pinned magnetic layer 12.
3 is further formed on the non-magnetic intermediate layer 13.
Is formed. The first fixed magnetic layer 12 and the second fixed magnetic layer 14 are, for example, a Co film,
It is formed of a NiFe alloy, a CoNiFe alloy, a CoFe alloy, or the like.

In the present invention, the antiferromagnetic layer 11 is made of P
It is preferable to be formed of a tMn alloy. PtMn
The alloy is Ni, which is conventionally used as an antiferromagnetic layer.
Compared to Mn alloys, FeMn alloys, etc., they have excellent corrosion resistance, a high blocking temperature, and a large exchange coupling magnetic field (exchange anisotropic magnetic field). In the present invention, instead of the PtMn alloy, X-Mn (where X is Pd, Ir, R
h, Ru, or one or more of these elements) alloy, or Pt—Mn—X ′ (where X ′
Is any one of Pd, Ir, Rh, Ru, Au, and Ag
Or two or more kinds of alloys). Further, regarding the composition of each of these alloys, the X-Mn alloy and the Pt-Mn-
It may be equivalent to X 'alloy.

The first pinned magnetic layer 12 shown in FIG.
The arrows shown on the second pinned magnetic layer 14 indicate the magnitude and direction of each magnetic moment, and the magnitude of the magnetic moment is determined by the saturation magnetization (Ms).
And the film thickness (t).

The first fixed magnetic layer 12 and the second fixed magnetic layer 14 shown in FIG. 8 are formed of the same material, for example, a Co film, and the thickness tP _{2 of} the second fixed magnetic layer 14 is 1
Is larger than the thickness tP ₁ of the fixed magnetic layer 12, the second fixed magnetic layer 14 has a larger magnetic moment than the first fixed magnetic layer 12. In this embodiment, the first pinned magnetic layer 12 and the second pinned magnetic layer 14 need to have different magnetic moments. Therefore, the film thickness tP ₁ of the _first pinned magnetic layer 12 is The second pinned magnetic layer 14 may be formed to be thicker than the thickness tP ₂ . As shown in FIG. 8, the first pinned magnetic layer 12 is magnetized in the Y direction in the drawing, that is, in the direction away from the recording medium (height direction), and opposes via the non-magnetic intermediate layer 13. The magnetization of the 14
Are magnetized antiparallel to the magnetization direction of the fixed magnetic layer 12 (ferri state).

The first pinned magnetic layer 12 includes the antiferromagnetic layer 11
The first pinned magnetic layer 12 and the antiferromagnetic layer 11 are formed by being subjected to annealing (heat treatment) in a magnetic field.
An exchange coupling magnetic field (exchange anisotropic magnetic field) is generated at the interface with the first fixed magnetic layer 1 as shown in FIG.
2 is fixed in the illustrated Y direction. When the magnetization of the first fixed magnetic layer 12 is fixed in the Y direction in the drawing, the magnetization of the second fixed magnetic layer 14 opposed via the non-magnetic intermediate layer 12 becomes the magnetization of the first fixed magnetic layer 12. It is fixed in a state antiparallel to the magnetization.

As the exchange coupling magnetic field is larger, the magnetization of the first fixed magnetic layer 12 and the magnetization of the second fixed magnetic layer 14 can be more stably maintained in an antiparallel state. By using a PtMn alloy having a high blocking temperature and generating a large exchange coupling magnetic field (exchange anisotropic magnetic field) at the interface with the first fixed magnetic layer 12 as the ferromagnetic layer 11, the first fixed magnetic layer The magnetization states of the layer 12 and the second pinned magnetic layer 14 can be kept thermally stable.

As described above, in the present embodiment, the exchange coupling magnetic field (Hex) is set by keeping the thickness ratio between the first fixed magnetic layer 12 and the second fixed magnetic layer 14 within an appropriate range.
And the magnetizations of the first pinned magnetic layer 12 and the second pinned magnetic layer 14 can be maintained in a thermally stable anti-parallel state (ferri-state). )
＼ Can be secured to the same extent as before.

Next, the non-magnetic intermediate layer 1 interposed between the first pinned magnetic layer 12 and the second pinned magnetic layer 14 shown in FIG.
3 will be described. In the present invention, the first fixed magnetic layer 1
The non-magnetic intermediate layer 13 interposed between the second pinned magnetic layer 14 and the second pinned magnetic layer 14 may be formed of one or more alloys of Ru, Rh, Ir, Cr, Re, and Cu. preferable.

As shown in FIG. 8, the second pinned magnetic layer 14
A nonmagnetic conductive layer 15 made of Cu or the like is formed thereon, and a free magnetic layer 16 is formed on the nonmagnetic conductive layer 15. As shown in FIG. 8, the free magnetic layer 16 is formed of two layers,
The layer denoted by reference numeral 17 formed on the side in contact with 5 is formed of a Co film. The other layer 18 is formed of a NiFe alloy, a CoFe alloy, a CoNiFe alloy, or the like. Note that Co on the side in contact with the nonmagnetic conductive layer 15
The reason for forming the film layer 17 is that diffusion of a metal element or the like at the interface with the nonmagnetic conductive layer 15 formed of Cu can be prevented, and ΔMR (resistance change rate) can be increased. . Reference numeral 19 denotes a protective layer formed of Ta or the like.

On the right and left sides of the magnetoresistive thin film magnetic element MR4 shown in FIG.
A hard bias layer 130 made of an o-Cr-Pt alloy or the like and a conductive layer 131 made of Cu or W are formed, and the free magnetic layer The magnetization 16 is magnetized in the X direction in the figure.

Also in the structure of the fourth embodiment, the texture direction of the underlayer of the substrate is aligned in the X direction, which is the same as the magnetization direction of the free magnetic layer 16, so that the texture 17
The induced magnetic anisotropy of the free magnetic layer 16 is given by the shape effect of 0, and the magnetization direction of the free magnetic layer 16 becomes X in FIG.
It becomes easy to turn in the direction. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layer 16 can be adjusted to a preferable range.

In the magnetoresistive thin film magnetic element MR4 shown in FIGS. 8 and 9, a sense current is supplied from the conductive layer to the free magnetic layer 16, the nonmagnetic conductive layer 15, and the second fixed magnetic layer 14. When a magnetic field is applied from the recording medium in the Y direction shown in FIGS. 8 and 9, the magnetization of the free magnetic layer 16 changes from the X direction shown in the figure to the Y direction, and the nonmagnetic conductive layer 15 and the free magnetic layer 16 Interface and nonmagnetic conductive layer 1
The scattering of the conduction electrons depending on the spin occurs at the interface between the magnetic layer 5 and the second pinned magnetic layer 14, thereby changing the electric resistance and detecting the leakage magnetic field from the recording medium.

Incidentally, the sense current actually flows also at the interface between the first pinned magnetic layer 12 and the non-magnetic intermediate layer 13. The first pinned magnetic layer 12 is not directly involved in ΔMR, and the first pinned magnetic layer 12 is for fixing the second pinned magnetic layer 14 involved in ΔMR in an appropriate direction.
In other words, it is a layer that plays an auxiliary role. For this reason, the flow of the sense current through the first pinned magnetic layer 12 and the non-magnetic intermediate layer 13 causes a shunt loss (current loss), but the amount of the shunt loss is very small. It is possible to obtain a ΔMR that is almost the same as that of the above.

Fifth Embodiment FIGS. 10 and 11 are cross sectional views schematically showing the structure of a magnetoresistive thin film magnetic element according to a fifth embodiment of the present invention. The magnetoresistive thin film magnetic element MR5 of this embodiment has a top single spin valve thin film magnetic element structure formed by reversing the film configuration of the bottom spin valve thin film magnetic element of FIG. That is, the magnetoresistive thin film magnetic element M shown in FIGS.
In R5, the base film 10, the NiFe film 2 are formed on the base layer S3.
2. Co film 23 (free magnetic layer 21 including NiFe film 22 and Co film 23), nonmagnetic conductive layer 24, second pinned magnetic layer 25, nonmagnetic intermediate layer 26, first pinned magnetic layer 2
7, an antiferromagnetic layer 28, and a protective layer 29 are stacked in this order. The antiferromagnetic layer 28 is preferably formed of a PtMn alloy or an X-Mn alloy equivalent to the antiferromagnetic layer 11 of the second embodiment.

Next, the nonmagnetic intermediate layer 26 interposed between the first fixed magnetic layer 27 and the second fixed magnetic layer 25 shown in FIGS. 10 and 11 is made of Ru, Rh, Ir, Cr, Re, Cu It is preferable to be formed of one or more alloys among them. In the spin-valve thin film magnetic element shown in FIGS. 10 and 11, the thickness tP ₁ of the first pinned magnetic layer 27 is
Is formed with a value different from the thickness tP ₂ of the fixed magnetic layer 25,
For example, the thickness tP ₁ of the first pinned magnetic layer 27 is
The second pinned magnetic layer 25 is formed to be thicker than the thickness tP ₂ . The magnetization of the first pinned magnetic layer 27 is magnetized in the Y direction in the figure, and the magnetization of the second pinned magnetic layer 25 is magnetized in the direction opposite to the Y direction in the figure. The magnetization of the second pinned magnetic layer 25 is in a ferri state. As shown in FIG. 11, a hard bias layer 130 and a conductive layer 131 are formed on the left and right sides of the laminated body portion from the base film 10 to the protective layer 29, and the hard bias layer 130 is moved in the X direction in the drawing. By being magnetized, the magnetization of the free magnetic layer 21 is aligned in the X direction in the figure.

Also in the structure of the fifth embodiment, the orientation of the texture of the underlayer of the substrate is aligned with the direction of the magnetization of the free magnetic layer 21, so that the induced magnetic anisotropy of the free magnetic layer 21 is formed by the shape effect of the texture 170. And the direction of magnetization of the free magnetic layer 21 is easily oriented in the X direction in FIGS. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layer 21 can be adjusted to a preferable range.

In the magnetoresistive thin film magnetic element MR5 shown in FIGS.
1. A sense current is applied to the nonmagnetic conductive layer 24 and the fixed magnetic layers 25 and 27. When a magnetic field is applied from the recording medium in the Y direction shown in FIGS.
Changes from the X direction to the Y direction in the figure, and spins at the interface between the nonmagnetic conductive layer 24 and the free magnetic layer 21 and at the interface between the nonmagnetic conductive layer 24 and the second pinned magnetic layer 25. When the dependent scattering of conduction electrons occurs, the electric resistance changes, and a leakage magnetic field from the recording medium is detected.

Sixth Embodiment FIG. 12 is a cross-sectional view schematically showing the structure of a magnetoresistive thin film magnetic element according to a sixth embodiment of the present invention, and FIG. 13 is a magnetoresistive effect shown in FIG. FIG. 2 is a cross-sectional view schematically showing a structure of a type thin film magnetic element viewed from a surface facing a recording medium. This magnetoresistive thin-film magnetic element MR6 is a so-called dual spin-valve thin-film magnetic element in which a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are formed above and below a free magnetic layer. It is. In this dual spin-valve thin-film magnetic element, since there are two combinations of these three layers of the free magnetic layer / non-magnetic conductive layer / fixed magnetic layer, a larger ΔMR than the aforementioned single spin-valve thin-film magnetic element. , And can respond to high-density recording.

In the magnetoresistive thin film magnetic element MR6 shown in FIG. 12, an underlayer 30, an antiferromagnetic layer 31, a first fixed magnetic layer (lower) 32, The intermediate layer (lower) 33, the second pinned magnetic layer (lower) 34, the nonmagnetic conductive layer 35, the free magnetic layer 36 (reference numerals 37 and 39 indicate Co
Film, reference numeral 38 is a NiFe alloy film), a nonmagnetic conductive layer 40,
Second pinned magnetic layer (upper) 41, non-magnetic intermediate layer (upper) 4
2, a first pinned magnetic layer (upper) 43, an antiferromagnetic layer 44, and a protective layer 45 are stacked in this order. As shown in FIG. 13, a hard bias layer 130 and a conductive layer 131 are formed on both sides of the stacked body from the base film 30 to the protective layer 45.

The antiferromagnetic layers 31 and 44 of the spin-valve thin-film magnetic element shown in FIGS. 12 and 13 are preferably formed of the PtMn alloy or the X-Mn alloy described in the above embodiment.

Next, the first fixed magnetic layers (lower) 32 and (upper) 43 and the second fixed magnetic layer (lower) 3 shown in FIGS.
4, (upper) non-magnetic intermediate layer 33, 4 interposed between
2 is preferably made of one or more alloys of Ru, Rh, Ir, Cr, Re, and Cu.

As shown in FIGS. 12 and 13, a first fixed magnetic layer (lower) 3 formed below the free magnetic layer 36.
2 having a thickness TP ₁ is thinner than the thickness tP ₂ of the second pinned magnetic layer (lower) 34 formed with a nonmagnetic intermediate layer 33. On the other hand, the film thickness t of the first pinned magnetic layer (upper) 43 formed above the free magnetic layer 36
P ₁ is formed to be thicker than the thickness tP ₂ of the second pinned magnetic layer 41 (upper) formed via the nonmagnetic intermediate layer 42. Then, the first fixed magnetic layer (lower) 32, (upper) 4
3 are both magnetized in the direction opposite to the illustrated Y direction, and the magnetizations of the second pinned magnetic layers (lower) 34 and (upper) 41 are magnetized in the illustrated Y direction.

In the case of the single spin valve type thin film element shown in FIGS. 8 and 9, Ms of the first fixed magnetic layer
The film thickness is adjusted so that tP ₁ and Ms · tP _{2 of} the second pinned magnetic layer are different, and the magnetization direction of the first pinned magnetic layer is either the illustrated Y direction or the opposite direction to the illustrated Y direction. May be. However, in the dual spin-valve thin film magnetic element shown in FIGS. 12 and 13, it is necessary to make the magnetizations of the first pinned magnetic layers (bottom) 32 and (top) 43 both point in the same direction. Therefore, in this embodiment,
The magnetic moment Ms · tP _{1 of} the first fixed magnetic layer (lower) 32 and (upper) 43 and the second fixed magnetic layer (lower) 34,
(Upper) Adjustment of the magnetic moment Ms · tP _{2 of} 41 and proper adjustment of the direction and magnitude of the magnetic field applied during the heat treatment can function satisfactorily as a dual spin-valve thin film magnetic element.

Here, the first pinned magnetic layer (lower) 32,
The reason why both the magnetizations of the (upper) 43 are oriented in the same direction is that the first fixed magnetic layer (lower) 32 and the second fixed magnetic layer (lower) 34 which are antiparallel to the magnetization of the (upper) 43. , (Upper) 41 are to be directed in the same direction, and the reason will be described below.

As described above, ΔMR of the spin-valve thin-film magnetic element is obtained by the relationship between the fixed magnetization of the fixed magnetic layer and the fluctuating magnetization of the free magnetic layer. When the layer is divided into two layers, a first pinned magnetic layer and a second pinned magnetic layer,
The layer of the pinned magnetic layer directly involved in R is a second pinned magnetic layer, and the first pinned magnetic layer is an auxiliary for fixing the magnetization of the second pinned magnetic layer in a fixed direction. Role.

Assuming that the magnetizations of the second fixed magnetic layers (lower) 34 and (upper) 41 shown in FIGS. 12 and 13 are fixed in opposite directions, for example, the second fixed magnetic layer (upper) 4
Regarding the relationship between the fixed magnetization of No. 1 and the fluctuating magnetization of the free magnetic layer 36, even if the resistance increases, the second fixed magnetic layer (lower) 3
In the relationship between the fixed magnetization of No. 4 and the fluctuating magnetization of the free magnetic layer 36, the resistance becomes extremely small. As a result, ΔMR in the dual spin-valve thin film magnetic element becomes the single spin valve shown in FIGS.型 M of type thin film magnetic element
It becomes smaller than R.

This problem is not limited to the dual spin-valve thin-film magnetic element in which the fixed magnetic layer is divided into two layers via the non-magnetic intermediate layer as in the present embodiment. The same applies to a thin-film magnetic element.To exhibit the characteristics of a dual spin-valve thin-film magnetic element that can increase the MR compared to a single spin-valve thin-film magnetic element and obtain a large output, The magnetizations of the fixed magnetic layers formed above and below the free magnetic layer must both be fixed in the same direction.

In the present embodiment, as shown in FIGS. 12 and 13, the pinned magnetic layer formed below the free magnetic layer 36 is the Ms · t of the second pinned magnetic layer (lower) 34.
P ₂ is Ms · tP _{1 of} the first pinned magnetic layer (lower) 32.
, The _second of which Ms · tP ₂ is large.
The magnetization of the fixed magnetic layer (lower) 34 is fixed in the Y direction in the figure. Further, Ms · tP _{2 of} the second pinned magnetic layer 34;
The so-called composite magnetic moment obtained by adding Ms · tP _{1 of} the first pinned magnetic layer 32 is controlled by the magnetic moment of the second pinned magnetic layer 34 having a large Ms · tP ₂ , and is directed in the Y direction in the drawing. ing.

On the other hand, the pinned magnetic layer formed above the free magnetic layer 36 is the M pin of the first pinned magnetic layer (upper) 43.
s · tP ₁ is the Ms of the second pinned magnetic layer (upper) 41
· TP has become ₂ larger than the magnetization of the Ms · tP ₁ large first pinned magnetic layer (upper) 43 is fixed in the direction opposite to the Y direction. First pinned magnetic layer (upper) 43
Ms · tP ₁ of the second pinned magnetic layer (upper) 41
The so-called synthetic magnetic moment obtained by adding tP ₂ is
It is governed by Ms · tP ₁ of the first pinned magnetic layer (upper) 43 and is directed in the direction opposite to the Y direction in the figure.

That is, in the dual spin-valve thin film magnetic element shown in FIGS. 12 and 13, Ms · tP ₁ of the _first fixed magnetic layer and Ms · tP ₁ of the second fixed magnetic layer above and below the free magnetic layer 36. The direction of the resultant magnetic moment, which can be obtained by adding ₂ , is opposite.
Therefore, the combined magnetic moment formed below the free magnetic layer 36 in the illustrated Y direction and the combined magnetic moment formed above the free magnetic layer 36 in the opposite direction to the illustrated Y direction. The moment forms a leftward magnetic field in the figure. Therefore, the magnetization of the first fixed magnetic layers (lower) 32 and (upper) 43 and the magnetizations of the second fixed magnetic layers (lower) 34 and (upper) 41 are caused by the magnetic field formed by the combined magnetic moment. Further, a stable ferri-state can be maintained.

Further, the sense current 114 mainly flows around the non-magnetic conductive layers 35 and 39 having a small specific resistance. When the sense current 114 flows, the sense current magnetic field is formed by the right-hand rule. But the sense current 1
14 in the direction shown in FIG.
6, the direction of the sense current magnetic field generated by the sense current at the location of the first pinned magnetic layer (lower) 32 / non-magnetic intermediate layer (lower) 33 / second pinned magnetic layer (lower) formed below , The first
Of the pinned magnetic layer (lower) 32 / non-magnetic intermediate layer (lower) 33 / second pinned magnetic layer (lower) of the fixed magnetic layer (lower). The sense current magnetic field generated by the sense current at the location of the first pinned magnetic layer (upper) 43 / non-magnetic intermediate layer (upper) 42 / second pinned magnetic layer (upper) 41 is applied to the first pinned magnetic layer. The direction of the combined magnetic moment of the magnetic layer (upper) 43 / non-magnetic intermediate layer (upper) 42 / second pinned magnetic layer (upper) 41 can be matched.

The merit of making the direction of the sense current magnetic field coincide with the direction of the resultant magnetic moment will be described in detail later. In short, simply, it is possible to improve the thermal stability of the fixed magnetic layer. Since a large sense current can be passed, there is a very great merit that the reproduction output can be improved. The relationship between the sense current magnetic field and the direction of the resultant magnetic moment is because the resultant magnetic moment of the fixed magnetic layer formed above and below the free magnetic layer 36 forms a leftward magnetic field in the drawing.

Normally, the ambient temperature in the hard disk drive rises to about 200 ° C., and in the future, the ambient temperature tends to further rise due to an increase in the number of revolutions of the recording medium, an increase in sense current, and the like. When the environmental temperature rises in this manner, the exchange coupling magnetic field decreases. However, according to the present embodiment, the first fixed state is thermally stabilized by the magnetic field formed by the combined magnetic moment and the sense current magnetic field. The magnetizations of the magnetic layers (lower) 32 and (upper) 43 and the magnetizations of the second fixed magnetic layers (lower) 34 and (upper) 41 can be maintained in a ferri-state.

The formation of the magnetic field by the combined magnetic moment and the directional relationship between the magnetic field by the combined magnetic moment and the sense current magnetic field are unique to the present invention, and are formed as a single layer above and below the free magnetic layer. Moreover, a conventional dual spin-valve thin-film magnetic element having a fixed magnetic layer oriented in the same direction and fixedly magnetized cannot be obtained.

In this embodiment, the M of the first pinned magnetic layer (lower) 32 formed below the free magnetic layer 36 is
The s · tP _1, second larger than Ms · tP ₂ of the fixed magnetic layer 34, and the Ms · tP ₁ of the first pinned magnetic layer 43 than the free magnetic layer 36 formed on the upper Second
May be smaller than Ms · tP ₂ of the fixed magnetic layer 41. Also in this case, the first pinned magnetic layer (lower) 3
2, by applying a magnetic field of 5 k (Oe) or more in the direction in which the magnetization of 43 is desired to be obtained, that is, in the Y direction shown or in the opposite direction to the Y direction shown in FIG. Fixed magnetic layers (lower) 34, (upper) 41
Can be fixed in the same direction, and a magnetic field can be formed by a clockwise or counterclockwise resultant magnetic moment.

As described above, according to the spin-valve type thin-film magnetic element shown in FIGS. And the magnetization of the two fixed magnetic layers is changed to an anti-parallel state (ferri state) by an exchange coupling magnetic field (RKKY interaction) generated between the two fixed magnetic layers. The thermally stable magnetization state of the fixed magnetic layer can be maintained. In particular, in the present embodiment, a PtMn alloy having a very high blocking temperature and generating a large exchange coupling magnetic field (exchange anisotropic magnetic field) at the interface with the first fixed magnetic layer is used as the antiferromagnetic layer. Thereby, the magnetization states of the first fixed magnetic layer and the second fixed magnetic layer can be made more excellent in thermal stability.

Further, in this embodiment, the antiferromagnetic layer, such as a PtMn alloy, which requires heat treatment to generate an exchange coupling magnetic field (exchange anisotropic magnetic field) at the interface with the first pinned magnetic layer. When a magnetic material is used, Ms · tP ₁ of the first fixed magnetic layer and Ms · tP _{2 of} the second fixed magnetic layer
Are formed with different values, and by appropriately adjusting the magnitude and direction of the applied magnetic field during the heat treatment, the direction in which the magnetization of the first pinned magnetic layer (and the second pinned magnetic layer) is to be obtained is obtained. Can be magnetized.

In particular, in the dual spin-valve thin film magnetic element shown in FIGS. 12 and 13, Ms · tP _{1 of} the first fixed magnetic layer (lower) 32 and (upper) 43 and the second fixed magnetic layer ( By properly adjusting the Ms · tP ₂ of the (lower) 34 and (upper) 41, and further appropriately adjusting the magnitude and direction of the applied magnetic field during the heat treatment, the upper and lower portions of the free magnetic layer 36 involved in ΔMR can be adjusted. The magnetizations of the two second pinned magnetic layers (lower) 34 and (upper) 41 formed in the same direction can be fixed in the same direction, and the combined magnetic moments formed above and below the free magnetic layer 36 are shifted in opposite directions. Being formed, formation of a magnetic field by the combined magnetic moment, and
The directional relationship between the magnetic field and the sense current magnetic field can be formed by the combined magnetic moment, and the thermal stability of the magnetization of the fixed magnetic layer can be further improved.

Also in the structure of the sixth embodiment, the direction of the texture S 3 of the underlayer of the substrate is aligned with the direction of the magnetization of the free magnetic layer 36, and the induced magnetic anisotropy of the free magnetic layer 36 is formed by the shape effect of the texture 170. The orientation of the magnetization of the free magnetic layer 36 is given by X in FIGS.
It becomes easy to turn in the direction. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layer 36 can be adjusted to a preferable range.

In the magnetoresistive thin film magnetic element MR6 shown in FIGS.
6. A sense current is applied to the nonmagnetic conductive layers 35 and 40 and the second pinned magnetic layers (lower) 34 and (upper) 41. When a magnetic field is applied from the recording medium in the illustrated Y direction shown in FIGS. 12 and 13, the magnetization of the free magnetic layer 36 changes from the illustrated X direction to Y direction.
Direction, and at this time, the interface between the nonmagnetic conductive layers 35 and 40 and the free magnetic layer 36 and the nonmagnetic conductive layers 35 and 40
And spin-dependent scattering of conduction electrons at the interface between the second pinned magnetic layer (lower) 34 and (upper) 41,
The electric resistance changes, and a leakage magnetic field from the recording medium is detected.

[Seventh Embodiment] FIG. 14 shows a seventh embodiment of the present invention.
FIG. 1 is a schematic cross-sectional view of the structure of the magnetoresistive thin-film magnetic element according to the first embodiment when viewed from a surface facing a recording medium.
FIG. 5 is a cross-sectional view schematically showing the structure of the spin-valve thin film magnetic element shown in FIG. 14 when viewed from the surface facing the recording medium. The magnetoresistance effect type thin film magnetic element M of this embodiment
Similarly to the spin-valve thin-film magnetic elements shown in FIGS. 8 to 13, R7 is provided at the trailing end of a floating slider provided in a hard disk drive to detect a recording magnetic field of a hard disk or the like. Things. The moving direction of the magnetic recording medium such as a hard disk is the Z direction in the figure, and the direction of the leakage magnetic field from the magnetic recording medium is the Y direction. In the magnetoresistive thin film magnetic element MR7 of this embodiment, not only the fixed magnetic layer but also the free magnetic layer is divided into two layers of a first free magnetic layer and a second free magnetic layer via a nonmagnetic intermediate layer. Have been.

As shown in FIG. 14, the underlayer S3 on the substrate side
A base film 50, an antiferromagnetic layer 51, a first fixed magnetic layer 52, a nonmagnetic intermediate layer 53, a second fixed magnetic layer 54,
The non-magnetic conductive layer 55, the first free magnetic layer 56, the non-magnetic intermediate layer 59, the second free magnetic layer 60, and the protective layer 61 are laminated in this order. The material constituting each of the layers may be the same as that of the previous embodiment.

The first fixed magnetic layer 52 and the second fixed magnetic layer 54 are formed of a Co film, a NiFe alloy, a CoFe alloy, a CoNiFe alloy, or the like. The nonmagnetic intermediate layer 53 is made of Ru, Rh, Ir, Cr, Re, Cu
It is preferable to be formed of one or more alloys among them. Further, the nonmagnetic conductive layer 55 is formed of Cu or the like. The magnetization of the first pinned magnetic layer 52 and the second
The pinned magnetic layer 54 is in a ferrimagnetic state in which the pinned magnetic layers 54 are magnetized in antiparallel to each other.
Is fixed in the illustrated Y direction, and the magnetization of the second pinned magnetic layer 54 is fixed in the direction opposite to the illustrated Y direction. In order to maintain the stability of the ferri state, a large exchange coupling magnetic field is necessary. In the present embodiment, various optimizations described below are performed to obtain a larger exchange coupling magnetic field.

On the non-magnetic conductive layer 55 shown in FIG.
A first free magnetic layer 56 is formed. As shown in FIG. 14, the first free magnetic layer 56 is formed of two layers, and a Co film 57 is formed on the side in contact with the nonmagnetic conductive layer 55. Co film 5 on the side in contact with nonmagnetic conductive layer 55
The first reason for forming 7 is that ΔMR can be increased,
The second reason is to prevent diffusion with the nonmagnetic conductive layer 55. On the Co film 57, a NiFe alloy film 58 is formed. Further, a non-magnetic intermediate layer 59 is formed on the NiFe alloy film 58. On the non-magnetic intermediate layer 59, a second free magnetic layer 60 is formed, and on the second free magnetic layer 60, a protective layer 61 made of Ta or the like is formed. The second free magnetic layer 60 is made of a Co film, a NiFe alloy, a CoFe
It is formed of an alloy or a CoNiFe alloy.

The spin valve film from the base film 50 to the protective layer 61 shown in FIG. 15 has its side surface cut into an inclined surface, and the spin valve film is formed in a trapezoidal shape. Hard bias layers 62, 62 and conductive layers 63, 63 are formed on both sides of the spin valve film. The hard bias layer 62 is formed of a Co-Pt alloy or a Co-Cr-Pt alloy, and the conductive layer 63 is formed of Cu, Cr, or the like.

A non-magnetic intermediate layer 59 is interposed between the first free magnetic layer 56 and the second free magnetic layer 60 shown in FIG. 14, and the first free magnetic layer 56 and the second free magnetic layer The magnetization of the first free magnetic layer 56 and the magnetization of the second free magnetic layer 60 are in an antiparallel state (ferri state) due to an exchange coupling magnetic field (RKKY interaction) generated between the layers 60.

A spin-valve thin-film magnetic element shown in FIG.
Then, for example, the film thickness tF of the first free magnetic layer 56₁Is
Thickness tF of second free magnetic layer 60_TwoFormed smaller than
Have been. The Ms of the first free magnetic layer 56
・ TF₁Is Ms · tF of the second free magnetic layer 60_TwoThan
Is also set to be small, and the hard bias layer 62
When a bias magnetic field is applied in the indicated X direction, Ms · tF_Two
The magnetization of the second free magnetic layer 60 having a large
Under the influence of the magnetic field, they are aligned in the X direction shown in FIG.
Exchange coupling magnetic field with the free magnetic layer 60 (RKKY interaction
Ms · tF ₁First free magnetic layer 5 having a small thickness
The magnetization of No. 6 is aligned in the direction opposite to the illustrated X direction.

When an external magnetic field enters from the Y direction in the figure, the magnetizations of the first free magnetic layer 56 and the second free magnetic layer 60 rotate under the influence of the external magnetic field while maintaining a ferrimagnetic state. I do. And the first that contributes to ΔMR
Magnetization of the free magnetic layer 56 and the second pinned magnetic layer 5
The electrical resistance changes depending on the relationship with the fixed magnetization of No. 4 (for example, magnetized in the direction opposite to the Y direction in the figure), and the external magnetic field is detected as a change in the electrical resistance. In the present embodiment, the nonmagnetic intermediate layer 59 interposed between the first free magnetic layer 60 and the first free magnetic layer 60 is formed of one or more alloys of Ru, Rh, Ir, Cr, Re, and Cu. Is preferred.

Also in the structure of the seventh embodiment, the orientation of the texture of the underlayer S3 of the substrate is aligned with the direction of the magnetization of the free magnetic layer 56. 14 and 15, the direction of magnetization of the free magnetic layer 56 is
It becomes easy to turn in the direction. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layer 56 can be adjusted to a preferable range.

[Eighth Embodiment] FIG. 16 shows an eighth embodiment of the present invention.
FIG. 17 is a cross-sectional view schematically showing the magneto-resistance effect type thin-film magnetic element according to the embodiment; FIG. 17 is a cross-sectional view of the magneto-resistance effect type thin-film magnetic element shown in FIG. 16 as viewed from a surface facing a recording medium; It is sectional drawing which shows typically. The magnetoresistive thin-film magnetic element MR8 of this embodiment is obtained by reversing the order of stacking the spin-valve thin-film magnetic elements shown in FIGS. That is, from below, on the substrate-side base film S3, the base film 70, the second free magnetic layer 71, the non-magnetic intermediate layer 72,
First free magnetic layer 73, nonmagnetic conductive layer 76, second fixed magnetic layer 77, nonmagnetic intermediate layer 78, first fixed magnetic layer 7
9, an antiferromagnetic layer 80, and a protective layer 81 are stacked in this order. The base film 70 and the protective layer 81 are formed of, for example, Ta. The antiferromagnetic layer 80 is preferably formed of a PtMn alloy or the above-described X-Mn alloy.

The first fixed magnetic layer 79 and the second fixed magnetic layer 77 are formed of a Co film, a NiFe alloy, a CoFe alloy, a CoNiFe alloy, or the like. The nonmagnetic intermediate layer 78 is made of Ru, Rh, Ir, Cr, Re, Cu
It is preferable to be formed of one or more alloys among them. Further, the nonmagnetic conductive layer 76 is formed of Cu or the like.

In the spin-valve thin-film magnetic element shown in FIG. 16, the free magnetic layer is formed by being divided into two layers, and the first free magnetic layer 73 is formed on the side in contact with the nonmagnetic conductive layer 76. The other free magnetic layer is a second free magnetic layer 71. As shown in FIG.
The free magnetic layer 73 is formed of two layers, and the layer 75 formed on the side in contact with the nonmagnetic conductive layer 76 is formed of a Co film. The layer 74 formed on the side in contact with the non-magnetic intermediate layer 72 and the second free magnetic layer 71 are, for example, N
It is formed of an iFe alloy, a CoFe alloy, a CoNiFe alloy, or the like.

The side surface of the spin valve film from the base film 70 to the protective layer 81 shown in FIG. 16 is cut into an inclined surface, and the spin valve film is formed in a trapezoidal shape. As shown in FIG. 17, hard bias layers 82 and 82 and conductive layers 83 and 83 are formed on both sides of the inclined portion of the spin valve film. The hard bias layer 82 is made of Co-P
t alloy or Co-Cr-Pt alloy, etc.
The conductive layer 83 is formed of Cu, W, or the like.

A non-magnetic intermediate layer 72 is interposed between the first free magnetic layer 73 and the second free magnetic layer 71 shown in FIG. 16, and the first free magnetic layer 73 and the second free magnetic layer The magnetization of the first free magnetic layer 73 and the magnetization of the second free magnetic layer 71 are in an antiparallel state (ferri state) due to an exchange coupling magnetic field (RKKY interaction) generated between the layers 71. In the spin-valve thin-film magnetic element shown in FIG. 16, for example, the film thickness TF1 of the _first free magnetic layer 73 is formed to be larger than the film thickness TF2 of the _second free magnetic layer 71. The Ms · t of the first free magnetic layer 73
F ₁ is set to be larger than Ms · tF _{2 of} the second free magnetic layer 71, and the hard bias layer 82
When a bias magnetic field is applied in the X direction shown in FIG.
Under the influence of the bias magnetic field, the magnetization of the first free magnetic layer 73 having a large tF ₁ is aligned in the X direction in the drawing, and the exchange coupling magnetic field (RKKY) with the first free magnetic layer 73 is adjusted.
Due to the interaction, the magnetization of the second free magnetic layer 71 having a small Ms · tF ₂ is aligned in a direction opposite to the X direction in the drawing. In the present invention, the thickness t of the first free magnetic layer 73 is
F ₁ is formed to be smaller than the film thickness tF _{2 of} the second free magnetic layer 71, and MS · tF of the first free magnetic layer 73 is formed.
₁ may be set smaller than MS · tF _{2 of} the second free magnetic layer 71.

When an external magnetic field from the magnetic recording medium enters from the Y direction in the drawing, the magnetizations of the first free magnetic layer 73 and the second free magnetic layer 71 maintain the ferri-state, and Rotate under the influence. And @M
The electrical resistance changes depending on the relationship between the magnetization direction of the first free magnetic layer 73 that gives an odd value to R and the fixed magnetization of the second fixed magnetic layer 71, and a signal of an external magnetic field is detected. In the present invention, the first free magnetic layer 73 and the second free magnetic layer 7
1, the nonmagnetic intermediate layer 72 is made of Ru, Rh,
It is preferable to be formed of one or more alloys of Ir, Cr, Re, and Cu.

The absolute value of the combined magnetic moment of the first free magnetic layer 73 and the second free magnetic layer 71 is determined by the absolute value of the combined magnetic moment of the first fixed magnetic layer 79 and the second fixed magnetic layer 77. By making the first value larger than the first value, the first
The magnetizations of the free magnetic layer 79 and the second free magnetic layer 77 are less affected by the combined magnetic moment of the first fixed magnetic layer 79 and the second fixed magnetic layer 77, and
The magnetization of the free magnetic layer 73 and the second free magnetic layer 71 rotates with high sensitivity to an external magnetic field, and the output can be improved.

Also in the structure of the eighth embodiment, the direction of the texture of the underlayer of the substrate is changed to the free magnetic layers 71 and 73.
The magnetization directions of the free magnetic layers 71 and 73 are imparted by the shape effect of the texture 170, and the magnetization directions of the free magnetic layers 71 and 73 are set in the X direction in FIGS. It becomes easy to turn. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layers 71 and 73 can be adjusted to a preferable range.

Ninth Embodiment FIG. 18 is a cross-sectional view schematically showing a structure of a magnetoresistive thin film magnetic element according to a ninth embodiment of the present invention. FIG. 19 is a cross sectional view showing the magnetoresistive effect shown in FIG. FIG. 2 is a cross-sectional view schematically showing a cross-sectional structure of a thin-film magnetic element viewed from a surface facing a recording medium. The magnetoresistive thin-film magnetic element MR9 of this embodiment is a dual spin-valve thin-film magnetic element in which a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are stacked above and below a free magnetic layer. The free magnetic layer and the pinned magnetic layer are divided into two layers via a non-magnetic intermediate layer.

The lowermost layer of the magnetoresistive thin film magnetic element MR9 shown in FIGS.
A base film 91 formed on the base layer S3 on the substrate side;
An antiferromagnetic layer 92, a first fixed magnetic layer (lower) 93, a nonmagnetic intermediate layer 94 (lower), a second fixed magnetic layer (lower) 95, a nonmagnetic conductive layer 96, Second free magnetic layer 97, non-magnetic intermediate layer 100, first free magnetic layer 10
1, nonmagnetic conductive layer 104, second pinned magnetic layer (upper) 10
5, a nonmagnetic intermediate layer (upper) 106, a first pinned magnetic layer (upper) 107, an antiferromagnetic layer 108, and a protective layer 109 are formed.

First, the material of each layer will be described. The antiferromagnetic layers 92 and 108 are made of the P used in the previous embodiment.
It is preferably formed of a tMn alloy or an X-Mn alloy. First pinned magnetic layer (lower) 93, (upper) 10
7, and the second pinned magnetic layer (lower) 95, (upper) 105
Represents a Co film, a NiFe alloy, a CoFe alloy, or C
It is formed of an oNiFe alloy or the like. Non-magnetic intermediate layers (lower) 94 and (upper) formed between the first fixed magnetic layers (lower) 93 and (upper) 107 and the second fixed magnetic layers (lower) 95 and (upper) 105. 106 and the non-magnetic intermediate layer 100 formed between the first free magnetic layer 101 and the second free magnetic layer 97 include Ru, Rh, Ir, Cr, Re,
It is preferable to be formed of one or more alloys of Cu. Further, the nonmagnetic conductive layers 96 and 104 are formed of Cu or the like.

As shown in FIGS. 18 and 19, the first free magnetic layer 101 and the second free magnetic layer 97 are formed of two layers. The layer 103 of the first free magnetic layer 101 formed on the side in contact with the nonmagnetic conductive layers 96 and 104 and the second
The layer 98 of the free magnetic layer 97 is formed of a Co film. The layer 102 of the first free magnetic layer 101 and the layer 99 of the second free magnetic layer 97 formed with the non-magnetic intermediate layer 100 interposed therebetween are made of, for example, a NiFe alloy, CoF
e alloy or CoNiFe alloy. Layers 98, 1 in contact with nonmagnetic conductive layers 96, 104
By forming 03 with a Co film, ΔMR can be increased, and diffusion with the nonmagnetic conductive layers 96 and 104 can be prevented.

In this embodiment, as described above, the antiferromagnetic layers 92 and 108 are made of a PtMn alloy or the like.
An antiferromagnetic material that requires heat treatment to generate an exchange coupling magnetic field (exchange anisotropic magnetic field) at the interface with the first pinned magnetic layers (bottom) 93 and (top) 107 is used. However, at the interface between the antiferromagnetic layer 92 formed below the free magnetic layer and the first pinned magnetic layer (lower) 93, diffusion of the metal element easily occurs, and the thermal diffusion layer is easily formed. Therefore, the magnetic film thickness functioning as the first fixed magnetic layer (lower) 93 is smaller than the actual film thickness _tp1 . Accordingly, in order to make the exchange coupling magnetic field generated in the laminated film above the free magnetic layer substantially equal to the exchange coupling magnetic field generated in the laminated film below the free magnetic layer, the exchange coupling magnetic field is formed below the free magnetic layer. 1 of the fixed magnetic layer (lower) 93 thickness tP ₁ / second pinned magnetic layer (lower) 95 thickness of tP ₂₎
But it is larger than the thickness tP ₂ are formed on the upper side (first pinned magnetic layer (upper) 107 thickness tP ₁ / second pinned magnetic layer (upper) 105 than the free magnetic layer By making the exchange coupling magnetic field generated from the laminated film above the free magnetic layer equal to the exchange coupling magnetic field generated from the laminated film below the free magnetic layer, the manufacturing process of the exchange coupling magnetic field is less deteriorated, and The reliability of the pad can be improved.

In the dual spin-valve thin film magnetic element shown in FIGS. 18 and 19, the second fixed magnetic layers (lower) 95, which are formed above and below the free magnetic layer, respectively.
(Top) The magnetizations of 105 need to be directed in opposite directions. This is because the free magnetic layer is the first free magnetic layer 10
The first free magnetic layer 97 is divided into two layers, namely, a first free magnetic layer 101 and a second free magnetic layer 97.
This is because the magnetization of the free magnetic layer 97 is antiparallel.

For example, as shown in FIGS. 18 and 19, if the magnetization of the first free magnetic layer 101 is magnetized in the direction opposite to the X direction in the figure, the first free magnetic layer 101
The exchange coupling magnetic field (RKKY interaction) with
Of the free magnetic layer 97 is magnetized in the X direction in the figure. The magnetizations of the first free magnetic layer 101 and the second free magnetic layer 97 are reversed under the influence of an external magnetic field while maintaining a ferrimagnetic state.

In the dual spin-valve thin film magnetic element shown in FIGS. 18 and 19, the first free magnetic layer 101
And the magnetization of the second free magnetic layer 97 are both ΔMR
And the first free magnetic layer 1
The electrical resistance changes depending on the relationship between the variable magnetization of the first and second free magnetic layers 97 and the fixed magnetization of the second fixed magnetic layers (lower) 95 and (upper) 105. In order to exhibit a function as a dual spin valve thin film magnetic element capable of expecting a larger ΔMR than a single spin valve thin film magnetic element, the first free magnetic layer 101 and the second pinned magnetic layer (upper) 105 And the second free magnetic layer 9
7 and the second pinned magnetic layer (lower) 95 so that the resistance change between them also shows the same fluctuation.
It is necessary to control the magnetization directions of the upper and lower 95, 105. That is, when the resistance change between the first free magnetic layer 101 and the second pinned magnetic layer (upper) 105 becomes maximum, the second free magnetic layer 97 and the second pinned magnetic layer (lower) 95 When the resistance change between the first free magnetic layer 101 and the second pinned magnetic layer (upper) 105 is minimized, the second free magnetic layer 97 and the second fixed magnetic layer The resistance change with the layer (lower) 95 should be minimized.

Therefore, in the dual spin-valve thin film magnetic element shown in FIGS.
Since the magnetization of the second free magnetic layer 97 and the magnetization of the second free magnetic layer 97 are antiparallel, the magnetization of the second fixed magnetic layer (upper) 105 and the magnetization of the second fixed magnetic layer (lower) 95 are set in opposite directions. Need to be magnetized. As described above, the second fixed magnetic layer (lower) 95 formed above and below the free magnetic layer,
By magnetizing (upper) 105 in the opposite direction, it is possible to obtain the same ΔMR as the conventional dual spin-valve thin film magnetic element.

Also in the structure of the ninth embodiment, the direction of the texture of the underlayer of the substrate is
1 and the magnetization direction of the free magnetic layers 97 and 101 is given by the shape effect of the texture 170, and the magnetization directions of the free magnetic layers 97 and 101 are changed to the X direction in FIGS. It becomes easy to turn to. That is, the magnetic anisotropy (anisotropic magnetic field) of the free magnetic layers 97 and 101 can be adjusted to a preferable range.

As described above, in the spin-valve thin-film magnetic element shown in FIGS. 14 to 19, not only the pinned magnetic layer but also the free magnetic layer are connected to the first free magnetic layer and the second free magnetic layer via the non-magnetic intermediate layer. The magnetic layer is divided into two magnetic layers, and the magnetization of the two free magnetic layers is changed to an antiparallel state (ferri state) by an exchange coupling magnetic field (RKKY interaction) generated between the two free magnetic layers. Accordingly, the magnetizations of the first free magnetic layer and the second free magnetic layer can be reversed with high sensitivity to an external magnetic field. Further, in the present invention, the thickness ratio between the first free magnetic layer and the second free magnetic layer, and the thickness ratio of the non-magnetic intermediate layer interposed between the first free magnetic layer and the second free magnetic layer. The thickness, the thickness ratio between the first fixed magnetic layer and the second fixed magnetic layer, and the thickness of the non-magnetic intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer By forming the thickness and the thickness of the antiferromagnetic layer within appropriate ranges, the exchange coupling magnetic field can be increased, and the magnetization states of the first fixed magnetic layer and the second fixed magnetic layer can be changed. As the fixed magnetization, the first free magnetic layer and the second
It is possible to maintain the thermally stable ferri-state by changing the magnetization state with the free magnetic layer to fluctuating magnetization, and to obtain the same ΔMR as the conventional one.
In the present invention, by further adjusting the direction of the sense current, the antiparallel state (ferri state) between the magnetization of the first fixed magnetic layer and the magnetization of the second fixed magnetic layer is more thermally stabilized. It is possible to keep it in a state.

In the spin-valve thin film magnetic element, conductive layers are formed on both sides of a laminated film composed of an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, and a free magnetic layer. Is shed. The sense current mainly flows to the nonmagnetic conductive layer having a small specific resistance, the interface between the nonmagnetic conductive layer and the fixed magnetic layer, and the interface between the nonmagnetic conductive layer and the free magnetic layer. In the present invention, the fixed magnetic layer is divided into a first fixed magnetic layer and a second fixed magnetic layer, and the sense current is mainly applied to an interface between the second fixed magnetic layer and the nonmagnetic conductive layer. Flowing. When the sense current is applied,
A sense current magnetic field is formed by the right-hand rule.
In the present invention, the sense current magnetic field is set in the same direction as the direction of the synthetic magnetic moment that can be obtained by adding the magnetic moment of the first fixed magnetic layer and the magnetic moment of the second fixed magnetic layer. The direction of current flow is adjusted.

[Operation of Sense Current Magnetic Field] Next, the operation of the sense current magnetic field in the structures of the embodiments shown in FIGS. 8 to 19 will be described. In the spin-valve thin film magnetic element shown in FIGS. 8 and 9, a second fixed magnetic layer 14 is formed below a nonmagnetic conductive layer 15. In this case,
The direction of the sense current magnetic field is matched to the magnetization direction of the fixed magnetic layer having the larger magnetic moment of the first fixed magnetic layer 12 and the second fixed magnetic layer 14.

As shown in FIG. 8, the magnetic moment of the second fixed magnetic layer 14 is larger than the magnetic moment of the first fixed magnetic layer 12, and the magnetic moment of the second fixed magnetic layer 14 is not shown. Opposite direction to Y direction (left direction in the figure)
Suitable for Therefore, a combined magnetic moment obtained by adding the magnetic moment of the first fixed magnetic layer 12 and the magnetic moment of the second fixed magnetic layer 14 is directed in the direction opposite to the Y direction (left direction in the figure).

As described above, the nonmagnetic conductive layer 15 is formed above the second fixed magnetic layer 14 and the first fixed magnetic layer 12. For this reason, the sense current magnetic field mainly generated by the sense current 112 flowing around the nonmagnetic conductive layer 15 is such that the sense current The flow direction of 112 may be controlled. By doing so, the direction of the combined magnetic moment of the first fixed magnetic layer 12 and the second fixed magnetic layer 14 matches the direction of the sense current magnetic field.

As shown in FIG. 8, the sense current 112 flows in the X direction in the figure. According to the right-hand screw rule, a sense current magnetic field formed by flowing a sense current is formed clockwise as shown by an arrow in FIG. Therefore, a sense current magnetic field in the illustrated direction (the direction opposite to the illustrated Y direction) is applied to the layer below the nonmagnetic conductive layer 15, and the first combined magnetic moment is generated by the sense current. The exchange coupling magnetic field (RKKY interaction) acting in the reinforcing direction and acting between the first fixed magnetic layer 12 and the second fixed magnetic layer 14 is amplified, and the magnetization of the first fixed magnetic layer 12 and the second The antiparallel state of magnetization of the second fixed magnetic layer 14 can be more thermally stabilized.

In particular, when a sense current of 1 mA flows, about 30
It is known that a sense current magnetic field of about (Oe) is generated and the element temperature rises by about 15 ° C. Further, the rotation speed of the recording medium increases to about 1000 rpm, and the temperature in the apparatus increases to about 100 ° C. due to the increase in the rotation speed. Therefore, for example, when a sense current of 10 mA flows, the element temperature of the spin-valve thin-film magnetic element becomes about 25
The temperature rises to about 0 ° C, and the sense current magnetic field is 300
(Oe). In such a case where a large sense current flows under an extremely high environmental temperature, it is necessary to add the magnetic moment of the first fixed magnetic layer 12 and the second fixed magnetic layer 14 to obtain the same. When the direction of the resultant magnetic moment and the direction of the sense current magnetic field are opposite, the antiparallel state between the magnetization of the first fixed magnetic layer 12 and the magnetization of the second fixed magnetic layer 14 is easily broken. Further, in order to be able to withstand even under a high ambient temperature, it is necessary to use an antiferromagnetic material having a high blocking temperature as the antiferromagnetic layer 11 in addition to adjusting the direction of the sense current magnetic field. In the present invention, a PtMn alloy having a blocking temperature of about 400 ° C. is used.

The combined magnetic moment formed by the magnetic moment of the first fixed magnetic layer 12 and the magnetic moment of the second fixed magnetic layer 14 shown in FIG. 8 is directed rightward in the figure (Y direction in the figure). If so, the sense current
In this case, the sense current magnetic field may be generated counterclockwise with respect to the plane of the drawing. Further, in the present invention, the texture 17 of the underlayer S3 is formed by laminating the magnetoresistive thin-film magnetic element MR1 on the underlayer S3 on the substrate side.
Since the magnetic anisotropy of the free magnetic layer 16 can be made uniform in the direction of 0, the anisotropic magnetic field of the free magnetic layer 16 can be adjusted to an appropriate value.

Next, the sense current direction of the spin-valve thin-film magnetic element shown in FIGS. 10 and 11 will be described. FIG.
In the structures shown in FIGS. 0 and 11, the second fixed magnetic layer 25 and the first fixed magnetic layer 27 are formed above the nonmagnetic conductive layer 24. As shown in FIG. 10, the first pinned magnetic layer 27
Is larger than the magnetic moment of the second pinned magnetic layer 25, and the direction of the magnetic moment of the first pinned magnetic layer 27 is in the Y direction (right direction in the figure). . Therefore, the combined magnetic moment obtained by adding the magnetic moment of the first fixed magnetic layer 27 and the magnetic moment of the second fixed magnetic layer 25 is as shown in FIG.
Is facing rightward in the figure.

As shown in FIG. 10, the sense current 113 flows in the X direction in the figure. According to the right-hand rule, a sense current magnetic field formed by flowing the sense current 113 is formed clockwise with respect to the paper surface as shown by an arrow in FIG. Since the second pinned magnetic layer 25 and the first pinned magnetic layer 27 are formed above the nonmagnetic conductive layer 24, the second pinned magnetic layer 25 and the first pinned magnetic layer 2
7, a sense current magnetic field in the right direction in the figure (the direction opposite to the Y direction in the figure) enters, and coincides with the direction of the synthetic magnetic moment. The anti-parallel state with the magnetization of the pinned magnetic layer 25 is hard to break.

When the combined magnetic moment is directed to the left direction in the figure (the direction opposite to the Y direction in the figure), the sense current 113 is caused to flow in the direction opposite to the X direction in the figure, and the sense current 113 is caused to flow. The sense current magnetic field to be formed is generated counterclockwise with respect to the plane of the paper, and the direction of the combined magnetic moment of the first pinned magnetic layer 27 and the second pinned magnetic layer 25 must match the direction of the sense current magnetic field. There is.

The spin-valve thin-film magnetic element shown in FIGS. 12 and 13 has a first fixed magnetic layer (lower) 32 and (upper) 43 and a second fixed magnetic layer (lower) 3 above and below a free magnetic layer 36.
4, (upper) 41 is a dual spin valve thin film magnetic element. In this dual spin-valve thin-film magnetic element, the magnetic properties of the first fixed magnetic layers (lower) 32 and (upper) 43 are set so that the combined magnetic moments formed above and below the free magnetic layer 36 are directed in opposite directions. Direction and magnitude of moment and second pinned magnetic layer (lower) 3
It is necessary to control the direction and magnitude of the magnetic moment of the (upper) 41.

As shown in FIG. 12, the magnetic moment of the second fixed magnetic layer (lower) 34 formed below the free magnetic layer 36 is the magnetic moment of the first fixed magnetic layer (lower) 32. The magnetic moment of the second pinned magnetic layer (lower) 34 is directed rightward in the figure (Y direction in the figure). Accordingly, the magnetic moment of the first pinned magnetic layer (lower) 32 and the second pinned magnetic layer (lower)
The combined magnetic moment, which can be obtained by adding the magnetic moments of FIG. 34, is directed rightward in the figure (Y direction in the figure). The magnetic moment of the first pinned magnetic layer (upper) 43 formed above the free magnetic layer 36 is larger than the magnetic moment of the second pinned magnetic layer (upper) 41, and The magnetic moment of the magnetic layer (upper) 43 is directed to the left direction in the drawing (the direction opposite to the Y direction in the drawing). Therefore, the combined magnetic moment, which can be obtained by adding the magnetic moment of the first pinned magnetic layer (upper) 43 and the magnetic moment of the second pinned magnetic layer (upper) 41, is the left direction in the figure (the Y direction in the figure). (Opposite direction). Thus, in the present invention, the combined magnetic moments formed above and below the free magnetic layer 36 face in opposite directions.

In this embodiment, as shown in FIG. 12, the sense current 114 flows in the direction opposite to the X direction by 180 °. As a result, a sense current magnetic field formed by flowing the sense current 114 is formed counterclockwise with respect to the paper surface as shown by an arrow in FIG. The free magnetic layer 3
6, the resultant magnetic moment formed above the free magnetic layer 36 is in the right direction (Y direction in the drawing), and the generated magnetic moment is formed in the left direction (opposite to the Y direction in the drawing). Therefore, the directions of the two combined magnetic moments coincide with the direction of the sense current magnetic field, and the magnetization of the first fixed magnetic layer (lower) 32 formed below the free magnetic layer 36. The antiparallel state of the magnetization of the second pinned magnetic layer (bottom) 34, the magnetization of the first pinned magnetic layer (top) 43 formed above the free magnetic layer 36, and the second pinned magnetic layer (top) The antiparallel state of magnetization of 41 can be maintained in a thermally stable state.

It should be noted that the resultant magnetic moment formed below the free magnetic layer 36 is directed leftward in the figure.
When the combined magnetic moment formed above the free magnetic layer 36 is directed rightward in the figure, the sense current 1
14, the direction of the sense current magnetic field formed by flowing the sense current and the direction of the resultant magnetic moment need to match.

In FIGS. 15 and 17, a spin-valve thin film formed by dividing a free magnetic layer into two layers, a first free magnetic layer and a second free magnetic layer, via a non-magnetic intermediate layer. In the embodiment of the magnetic element, a first fixed magnetic layer 52 and a second fixed magnetic layer 54 are formed below a nonmagnetic conductive layer 55 as in a spin-valve thin film magnetic element shown in FIG. In this case, the same sense current direction control as in the case of the spin-valve thin-film magnetic element shown in FIG. 8 may be performed.

Also, in the case where the first fixed magnetic layer 79 and the second fixed magnetic layer 77 are formed above the nonmagnetic conductive layer 76 as in the spin-valve thin film magnetic element shown in FIG. In other words, the same sense current direction control as in the case of the spin-valve thin film magnetic element shown in FIG. 10 may be performed.

As described above, according to each of the above embodiments,
The direction of the sense current magnetic field formed by flowing the sense current, the magnetic moment of the first pinned magnetic layer, and the second
By matching the direction of the resultant magnetic moment which can be obtained by adding the magnetic moments of the fixed magnetic layers, the exchange coupling magnetic field (RKKY) acting between the first fixed magnetic layer and the second fixed magnetic layer. It is possible to keep the antiparallel state (ferri state) of the magnetization of the first fixed magnetic layer and the magnetization of the second fixed magnetic layer thermally stable. In particular, in the present embodiment, in order to further improve the thermal stability, an antiferromagnetic material having a high blocking temperature, such as a PtMn alloy, is used for the antiferromagnetic layer. Even if the magnetization of the first pinned magnetic layer and the magnetization of the second pinned magnetic layer are greatly increased, the antiparallel state (ferri state) of the magnetization of the second pinned magnetic layer can be hardly broken.

If the sense output is increased by increasing the amount of sense current in order to cope with the increase in recording density, the sense current magnetic field also increases accordingly. In the embodiment of the present invention, the sense current magnetic field is Since the effect of amplifying the exchange coupling magnetic field acting between the first fixed magnetic layer and the second fixed magnetic layer is brought about, the first fixed magnetic layer and the second fixed magnetic layer are increased by increasing the sense current magnetic field. Becomes more stable. This control of the sense current direction can be applied to any case where any antiferromagnetic material is used for the antiferromagnetic layer. For example, the control of the antiferromagnetic layer and the pinned magnetic layer (first pinned magnetic layer) It does not matter whether heat treatment is required or not in order to generate an exchange coupling magnetic field (exchange anisotropic magnetic field) at the interface. Further, FIG.
Even in the case of a single spin-valve type thin-film magnetic element in which the fixed magnetic layer is formed as a single layer as in the embodiments shown in FIGS. 6 and 7, the sense current magnetic field formed by passing the above-described sense current is reduced. By matching the direction with the magnetization direction of the fixed magnetic layer, it is possible to thermally stabilize the magnetization of the fixed magnetic layer.

[Tenth Embodiment] FIG. 20 shows a tenth embodiment of the present invention.
FIG. 9 is a cross-sectional view schematically illustrating a structure of a magnetoresistive thin film magnetic element according to a zeroth embodiment. Note that the structures of the slider and the inductive head for writing provided with the magnetoresistive thin-film magnetic element are the same as those of the previous embodiment, so that the description of these parts will be omitted. The magnetoresistive thin film magnetic element MR10 of this embodiment is an AMR (Anisot
The underlayer S3 of the present invention is applied to a configuration similar to a ropic magnetoresistance) head. The magnetoresistive thin-film magnetic element MR10 has a soft magnetic layer 201, an electric insulating layer 202, and a ferromagnetic layer (AMR material layer) on an underlayer S3 formed on a substrate equivalent to that of the above-described embodiment. For example, N
iFe alloy layers such as permalloy) 203 are sequentially laminated, and on both ends of the ferromagnetic layer 203, antiferromagnetic layers 204, 204 are laminated with an interval corresponding to the track width, and conductive layers are further formed thereon. The layer 205 is configured by being stacked.

Also in the magnetoresistive thin film magnetic element MR10 having the above-described structure, the resistance of the ferromagnetic layer 203 changes linearly in accordance with the leakage magnetic field from the magnetic recording medium, so that the magnetoresistance effect can be obtained. . In addition, since it is necessary to generate a smooth resistance change with little Barkhausen noise in these laminates, the magnetic anisotropy of the magnetic layer is made uniform in the direction of the texture of the underlayer S3 in the track width direction. A smooth resistance change with less noise can be obtained.

[Eleventh Embodiment] FIG. 21 shows the first embodiment of the present invention.
1 is a cross-sectional view schematically illustrating a structure of a magnetoresistive thin-film magnetic element according to an embodiment. Note that the structures of the slider and the inductive head for writing provided with the magnetoresistive thin-film magnetic element are the same as those of the previous embodiment, so that the description of these parts will be omitted. The magnetoresistive thin-film magnetic element MR11 of this embodiment is obtained by applying the underlayer S3 of the present invention to a configuration similar to an AMR head. The magnetoresistive thin-film magnetic element MR11 includes an underlayer S3
, A soft magnetic layer 201, an electric insulating layer 202, and a ferromagnetic layer (AMR material layer: a layer made of, for example, permalloy of a NiFe alloy) 203 are laminated to form a laminate having a trapezoidal cross section. A hard bias layer 206 made of a hard magnetic material and a conductive layer 207 made of Cu or the like are laminated on both ends.

Also in the magnetoresistive thin film magnetic element MR11 having the above-described structure, the resistance of the laminated body changes linearly according to the leakage magnetic field from the magnetic recording medium, so that the magnetoresistance effect can be obtained. In addition, since it is necessary to generate a smooth resistance change with little Barkhausen noise in the laminate, the direction of the texture of the underlayer S3 is taken as the track width direction, and the magnetic anisotropy of the magnetic layer is aligned in that direction to obtain the Barkhausen noise. And a smooth change in resistance can be obtained. In addition, since the soft magnetic layer 201 can be made into a single magnetic domain by applying a bias to the soft magnetic layer 201 by a leakage magnetic field from the hard bias layer 206, a smooth resistance change with little Barkhausen noise can be obtained.

[Twelfth Embodiment] FIG. 22 shows a twelfth embodiment of the present invention.
FIG. 4 is a cross-sectional view schematically illustrating a structure of a magnetoresistive thin film magnetic element according to a second embodiment. Note that the structures of the slider and the inductive head for writing provided with the magnetoresistive thin-film magnetic element are the same as those of the previous embodiment, so that the description of these parts will be omitted. The magnetoresistive thin-film magnetic element MR12 of this embodiment is an example of a structure using an exchange bias method as a bias for converting a ferromagnetic layer into a single magnetic domain. A nonmagnetic conductive layer 211 and a ferromagnetic layer 212 having a magnetoresistive effect are stacked, and an antiferromagnetic layer 213 and a conductive layer 215 are stacked at an interval corresponding to the track width Tw. Is provided.

In the structure shown in FIG. 22, the ferromagnetic layer 2
A longitudinal bias is applied to the ferromagnetic layer 212 by the exchange anisotropic coupling at the interface between the two layers 12 and 213 and the region B in FIG. The contacted region) is converted into a single magnetic domain in the X direction, which induces the ferromagnetic layer 212 into a single magnetic domain in the X direction in the region A within the track width. The steady current is applied to the ferromagnetic layer 212 from the lead layer 215 via the antiferromagnetic layer 213. When a steady current is applied to the ferromagnetic layer 212,
From the ferromagnetic layer 212 due to the magnetostatic coupling energy from
A transverse bias magnetic field in the direction is provided. When the leakage magnetic field from the magnetic medium is applied to the ferromagnetic layer 212 magnetized by the longitudinal bias magnetic field and the lateral bias magnetic field as described above, the electric resistance with respect to the steady current linearly responds in proportion to the magnitude of the leakage magnetic field. Therefore, the leakage magnetic field can be detected based on the change in the electric resistance. Even in the above structure, it is necessary to generate a smooth resistance change with less Barkhausen noise in the ferromagnetic layer 212. Therefore, the direction of the texture of the underlayer S3 is defined as the track width direction, and the magnetic anisotropy of the ferromagnetic layer 212 , Smooth resistance change with little Barkhausen noise can be obtained.

[Thirteenth Embodiment] FIG. 23 shows a thirteenth embodiment of the present invention.
It is a cross-sectional view showing typically the structure of the magnetoresistive effect type thin-film magnetic element of 3rd Embodiment. Note that the structures of the slider and the inductive head for writing provided with the magnetoresistive thin-film magnetic element are the same as those of the previous embodiment, so that the description of these parts will be omitted. The magnetoresistive thin film magnetic element MR13 of this embodiment has a free magnetic layer 2
17, the nonmagnetic conductive layer 218, the fixed magnetic layer 219, and the antiferromagnetic layer 220 are laminated, and the conductive layer 2 is placed on both sides of the laminate from above and below.
12 and the antiferromagnetic layer 213, and the entire structure is adjacent to the underlayer S3.

In the structure shown in FIG. 23, antiferromagnetic layers 213 are provided on both ends of free magnetic layer 217, and an exchange anisotropic magnetic field generated at the contact interface between free magnetic layer 217 and antiferromagnetic layer 213 is provided. Used as a bias. Even in the above structure, it is necessary to generate a smooth resistance change with little Barkhausen noise in the free magnetic layer 217. Therefore, the direction of the texture of the underlayer S3 is defined as the track width direction (X direction), and the free magnetic layer 217 is oriented in that direction.
By making the magnetic anisotropy uniform, a smooth resistance change with little Barkhausen noise can be obtained.

"Fourteenth Embodiment" FIG. 24 shows a fourteenth embodiment of the present invention.
FIG. 14 is a cross-sectional view schematically illustrating a structure of a magnetoresistive thin-film magnetic element according to a fourth embodiment. Note that the structures of the slider and the inductive head for writing provided with the magnetoresistive thin-film magnetic element are the same as those of the previous embodiment, so that the description of these parts will be omitted. In the magnetoresistive thin film magnetic element MR14 of this embodiment, an antiferromagnetic layer 231, a fixed magnetic layer 232, a nonmagnetic conductive layer 233, and a free magnetic layer 234 are sequentially laminated on a base layer S3. Anti-ferromagnetic layers 235 and 235 are stacked on both ends of the anti-ferromagnetic layer 235 with an interval corresponding to the track width TW, a conductive layer 236 is stacked on the anti-ferromagnetic layer 235, and the conductive layer 236 and the free magnetic layer A protective layer 237 is laminated so as to cover the 234. In the structure of this embodiment, a spin-valve magnetoresistive thin-film magnetic element is constituted by the antiferromagnetic layer 231, the fixed magnetic layer 232, the nonmagnetic conductive layer 233, and the free magnetic layer 234.

In the structure shown in FIG. 24, the direction of magnetization of fixed magnetic layer 232 is pinned in the direction of arrow b in FIG. 24 by the exchange coupling magnetic field of antiferromagnetic layer 231.
Due to the unidirectional anisotropy of the antiferromagnetic layer 235, the antiferromagnetic layer 23
By applying a bias to the free magnetic layer 234 in the portion in contact with No. 5, the free magnetic layer 234 in the portion within the track width is made into a single magnetic domain, so that the magnetization directions can be aligned. Also in the above structure, it is necessary to generate a smooth resistance change with little Barkhausen noise in the free magnetic layer 234. Therefore, the texture direction of the underlayer S3 is defined as the track width direction (X direction), and the free magnetic layer 234 is oriented in that direction. By making the magnetic anisotropy uniform, a smooth resistance change with little Barkhausen noise can be obtained.

In the structure shown in FIG. 23, antiferromagnetic layers 213 are provided on both ends of free magnetic layer 217, and an exchange anisotropic magnetic field generated at the contact interface between free magnetic layer 217 and antiferromagnetic layer 213 is generated. Used as a bias. Even in the above structure, it is necessary to generate a smooth resistance change with little Barkhausen noise in the free magnetic layer 217. Therefore, the texture direction of the underlayer S3 is defined as the track width direction (X direction), and the ferromagnetic layer 212 is oriented in that direction. By making the magnetic anisotropy uniform, a smooth resistance change with little Barkhausen noise can be obtained.

[0138]

EXAMPLES wafer on a substrate made of Al ₂ O ₃ -TiC,
Using a stationary facing type sputtering apparatus, an alumina layer (Al ₂ O ₃ layer) with a thickness of 10000Å and a lower shield layer with a thickness of 10000Å made of Co-Nb-Zr are formed. Was used to form an underlayer of a 1000 ° -thick alumina layer (Al ₂ O ₃ layer). Here, the orientation flat portion formed on the wafer substrate is directed forward in the revolving direction of the substrate, and the wafer substrate is passed through the particle deposition region near the target at a speed of 180 cm / min as shown in FIG. Was formed, and a substrate provided with an underlayer in which a texture was formed in parallel with the orientation flat portion was obtained.

On this wafer substrate, a base film having a thickness of 50 ° made of Ta was formed by using a substrate fixed type sputtering apparatus, and then a NiFe film having a thickness of 50 ° and a Co film having a thickness of 10 ° were formed.
A free magnetic layer made of a film is formed, a nonmagnetic conductive layer made of a Cu film having a thickness of 25 ° is formed, and a C film having a thickness of 25 ° is further formed.
A fixed magnetic layer made of a u film and a 25 ° thick Co film is formed, an antiferromagnetic layer made of a 300 mm thick PtMn film is formed thereon, and a 50 ° thick protective layer made of Ta is formed thereon. It was formed, and the whole was subjected to ion milling to a width corresponding to the track width to obtain a laminate having a trapezoidal cross section. In addition,
When ion milling is performed, the track width direction is aligned with the direction of the texture of the underlayer. this is,
In other words, this is the same as processing in which the oblique sides on both sides of the laminate having a trapezoidal cross section are aligned in the direction of the texture of the underlying layer of the wafer substrate. In addition, the laminated structure of the laminated body thus formed is briefly described as (Ta layer 50 ° /
NiFe layer 50Å / Co layer 10Å / Cu layer 25Å / Co
The layered structure is represented by (layer 25 で / PtMn layer 300Å / Ta layer 50Å). When a free magnetic layer composed of a NiFe layer and a Co layer is formed, a magnetic field of about 50 (Oe) is applied in the track width direction to reduce the magnetically induced anisotropy due to film formation in the magnetic field in the track width direction (downward). In the direction of the texture of the formation).

Next, a hard bias layer made of CoCrPt and having a thickness of 500 ° and a conductive layer made of Cu and having a thickness of 1000 ° are laminated on both sides of the laminate to form a magnetoresistive thin film magnetic element (bottom type spin valve element). ) Got. When forming the hard bias layers on both sides of the laminate,
As shown in FIG. 3, both hard bias layers are formed so as to be arranged along the texture direction of the underlying layer on the substrate.

In order to obtain exchange coupling between the PtMn antiferromagnetic layer and the pinned magnetic layer in the element height direction (Y direction in FIG. 1), a magnetic field of about 1 kOe is applied in the element height direction. Annealing at about 250 ° C. was performed.

Next, while applying a magnetic field of about 100 (Oe) in the track width direction of the above-mentioned laminated body, annealing is performed by heating to about 200 ° C. to impart induced magnetic anisotropy to the free magnetic layer. Thus, a magnetoresistive thin film magnetic element was obtained. Here, the strength of the magnetic field at the time of annealing is set to 100 (Oe) so as not to adversely affect the anisotropic magnetic field of the fixed magnetic layer that has been annealed in the previous step.

FIG. 25 shows the measurement results of the anisotropic magnetic field of the free magnetic layer in each step in the magnetoresistive thin film magnetic element having the above structure. In FIG. 25, the measured values after forming the magnetoresistive thin-film magnetic element (in a state where the laminated body is formed) and the values for generating the exchange coupling magnetic field for pinning the magnetization of the fixed magnetic layer are shown. The measured values after annealing and the measured values after annealing in the track width direction to impart induced magnetic anisotropy to the free magnetic layer are shown. In FIG. 25, the measured value marked with a triangle is directed to the front side in the substrate revolving direction in order to form a texture so that it becomes parallel to the orientation flat part when the substrate is revolved by the sputtering apparatus. Shows the measurement results of the substrate revolved film
● The mark shows the measurement result of a sample with the substrate revolving film oriented with the orientation flat part toward the side of the substrate revolving direction in order to form the texture so that it is perpendicular to the orientation flat part when the substrate revolving film is formed. And the measurement results marked with □ indicate the results of measurement performed with a substrate stationary type sputtering device (a sputtering device that forms a film while the substrate is kept stationary under the target).

According to the results shown in FIG. 25, in the example where the magnetoresistive effect type thin film magnetic element was manufactured using the underlayer on which the texture was formed so as to be parallel to the orientation flat portion, the anisotropic magnetic field was 5%. In the example of manufacturing a magnetoresistive thin-film magnetic element using an underlayer having a texture formed so as to be perpendicular to the orientation flat portion, the anisotropy is shown. The magnetic field shows a range of -10 to -20 (Oe), and in the example manufactured by a substrate stationary type sputtering apparatus, -4 to +6.
Anisotropic magnetic field in the range of (Oe) was shown.

Here, when the anisotropic magnetic field of the free magnetic layer is analyzed in consideration of the above-described manufacturing process, when annealing is performed to generate exchange coupling, the magnetization of the free magnetic layer also has an element height during annealing. The free magnetic layer is provided with induced magnetic anisotropy in the height direction of the element. From the above, the direction and magnitude of the anisotropic magnetic field of the free magnetic layer after annealing for generating exchange coupling are induced magnetic anisotropy due to the shape effect due to the direction of the texture of the underlayer on the substrate side, It is considered that it is determined by induced magnetic anisotropy caused by film formation in a magnetic field and induced magnetic anisotropy caused by annealing for causing exchange coupling. From these facts, in the case of the + display area (positive value area) in FIG. 25, it is considered that the easy axis of magnetization of the free magnetic layer is oriented in the track width direction, which indicates that the coercive force in the element height direction is high. Means smaller. In FIG. 25, if the region is a negative region (a region having a negative value), it is considered that the easy axis of magnetization of the free magnetic layer is oriented in the device height direction, which increases the coercive force in the device height direction. Means that.

Here, assuming a thin film magnetic head for a hard disk drive, in order to suppress Barkhausen noise, the direction of the track width (Tw) is set as the easy axis of magnetization, and the size Hkf is about 0 to 20 (Oe). It is considered that it is preferable that Here, the anisotropic magnetic field is 20 (O
If the value exceeds e), on the contrary, the anisotropic magnetic field is too strong, so that magnetization rotation is difficult in the element height direction, and the reproduction sensitivity (reproduction output) of the thin-film magnetic head is reduced. Has an upper limit of 20 (Oe) and a lower limit of 0 (Oe).
e), but a more preferred range is from 5 to 2
It seems to be in the range of 0 (Oe). Looking at the results shown in FIG. 25 from this point of view, if the texture direction of the underlayer is the track width direction, the value of the anisotropic magnetic field of the free magnetic layer is set in an appropriate range (dashed line in FIG. 25). It is clear that control can be performed within the range of 0 to 20 (Oe) indicated by oblique lines.

FIG. 26 shows the results of measuring the exchange coupling magnetic field of the fixed magnetic layer in each step. It is clear that the antiferromagnetic layer made of PtMn does not exert an exchange coupling force on the fixed magnetic layer in a state where the antiferromagnetic layer is formed and not heat-treated.
After annealing (heat treatment) for fixing the magnetization, 800 (O
It became clear that an excellent exchange coupling magnetic field exceeding e) was applied.

Next, FIG. 27 shows a state where (Ta base film 50 ° / P
tMn layer 300Å / Co layer 25Å / Cu layer 25Å / Co
The results obtained by measuring the anisotropic magnetic field of the free magnetic layer of the bottom-type magnetoresistive thin-film magnetic element represented by layer 10Å / NiFe layer 50Å / Ta layer 50Å) for each step.

From the results shown in FIG. 27, if the direction of the texture of the underlayer is set to the track width direction, the value of the anisotropic magnetic field of the free magnetic layer is set to an appropriate range (shown by the dashed line in FIG. 27). It is clear that control can be performed within the range of 0 to 20 (Oe).

FIG. 28 shows the results of measuring the exchange coupling magnetic field of the fixed magnetic layer in each step. It is clear that the antiferromagnetic layer made of PtMn does not exert an exchange coupling force on the fixed magnetic layer in a state where the antiferromagnetic layer is formed and not heat-treated.
After annealing (heat treatment) for fixing the magnetization, 900 (O
It became clear that an excellent exchange coupling magnetic field exceeding e) was applied.

From the test results shown in FIGS. 25 to 28, the bottom type magnetoresistive thin film magnetic element having the antiferromagnetic layer provided on the bottom side and the top type having the antiferromagnetic layer provided on the top side are shown. It was clarified that the influence of the underlayer of the substrate differs depending on the type of magnetoresistive thin film magnetic element.
This is presumed to be the reason described below. The types and numbers of the layers existing between the base layer and the free magnetic layer of the substrate are different between the above-mentioned top type and the bottom type, and between the top type and the bottom type, the free magnetic layer composed of the NiFe layer and the Co layer is different. Since the order of film formation is reversed, it is considered that the influence from the underlayer is different due to the fact that the crystal orientation of the free magnetic layer and the amount of lattice distortion at the interface with the underlayer are different between the top type and the bottom type.

FIG. 29 shows (Si substrate / Al ₂ O ₃ layer / Ta
Layer 50Å / PtMn layer 300Å / Co layer 25Å / Cu layer 25Å / Co layer 10Å / NiFe layer 50Å / Ta layer 50
Ii) A bottom-type magnetoresistive thin-film magnetic element shown in Å) is formed, and a magnetic field of 1 kOe is applied thereto at 4 ° C. for 4 hours.
The RH curve of a magnetoresistive thin-film magnetic element obtained by time annealing (annealing for fixing the magnetization direction of the fixed magnetic layer Co) is shown. As shown in FIG. 29, an element exhibiting excellent magnetoresistance change was obtained. In this magnetoresistive thin film magnetic element, the value of Hbf (the bias magnetic field of the free layer: the magnetic field at which the free magnetic layer starts reversing the magnetization) is 5
The values of Oe and Hex (exchange anisotropic magnetic field) are 950 Oe.

[0153]

As described above, according to the present invention, an underlayer formed on a substrate is formed by deposition of particles from a target,
A direction that intersects with the substrate passing direction when the substrate passes through the particle deposition area from the target , for example, the direction that is orthogonal
Of the free magnetic layer of the magnetoresistive thin film magnetic element
Since the width directions are aligned, it is possible to apply an anisotropic magnetic field in a preferred direction to the free magnetic layer under the influence of the underlayer. As a result, the direction of magnetization of the free magnetic layer of the magnetoresistive thin film magnetic element can be easily aligned in one direction, and the free magnetic layer can be easily formed into a single magnetic domain. It is possible to obtain an excellent magnetoresistive thin-film magnetic element exhibiting a smooth resistance change with little change.

The direction crossing the substrate passing direction when the substrate passes through the particle deposition region from the target , for example,
In this case , the texture is formed in a direction orthogonal to the direction, so that by aligning the track width direction with the direction of the texture, the magnetization direction of the free magnetic layer is easily aligned, and the free magnetic layer is made into a single magnetic domain. Thus, an excellent magnetoresistive thin film magnetic element exhibiting a smooth resistance change with little Barkhausen noise can be obtained. If a bias layer for adjusting the direction of magnetization of the free magnetic layer is separately provided and the direction of magnetization of the free magnetic layer is aligned based on the induced magnetic anisotropy of the bias layer, the texture of the underlayer may be adjusted.
In combination with the effect described above, the magnetization direction of the free magnetic layer can be better aligned, and an excellent magnetoresistive thin film magnetic element exhibiting smoother resistance change with less Barkhausen noise can be obtained. . Specifically, a layer made of Al ₂ O ₃ may be used as these underlayers.

In a magnetoresistive thin-film magnetic element having a structure in which an antiferromagnetic layer for pinning magnetization by applying an exchange coupling magnetic field to a fixed magnetic layer, the antiferromagnetic layer is made of XM
By forming from an n alloy or a Pt-Mn-X 'alloy, a high exchange coupling magnetic field can be obtained, and a highly stable magnetoresistive thin film magnetic element having a strong pinning force of magnetization of the fixed magnetic layer can be obtained. can get. These alloys also have a higher blocking temperature than conventional antiferromagnetic materials such as FeMn and NiO, so that a magnetoresistive thin film magnetic element having excellent heat resistance can be obtained.

Further, as the magnetoresistive thin film magnetic element, a dual type structure in which a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are laminated on both sides in the thickness direction of the free magnetic layer may be adopted. Alternatively, the magnetoresistive thin film magnetic element may have a structure in which at least one of the pinned magnetic layer and the free magnetic layer is divided into two.

Next, according to the method of the present invention, while the substrate is moved in a specific direction with respect to the particle deposition region at the time of forming the underlayer, the technology generated by depositing the target particles on the substrate underlayer.
The direction of the underlayer is added to the texture of this underlayer.
The direction of magnetization of the free magnetic layer of the magnetoresistive element is aligned with the direction of magnetization of the free magnetic layer of the magnetoresistive element, so that the direction of magnetization of the free magnetic layer of the magnetoresistive thin film magnetic element can be easily aligned in one direction. As a result, it is easy to make the free magnetic layer into a single magnetic domain, so that it is possible to obtain an excellent thin film magnetic element of the magnetoresistive effect type exhibiting a smooth resistance change with little Barkhausen noise. Further, by forming a film while applying a magnetic field in the track width direction when forming the free magnetic layer, the induced magnetic anisotropy that can be imparted to the free magnetic layer is further improved in combination with the effect of the underlayer. Can be adjusted. Furthermore, after performing annealing to generate an exchange coupling magnetic field in the antiferromagnetic layer, a magnetic field is applied in the track width direction to anneal the free magnetic layer, and to impart induced magnetic anisotropy to the free magnetic layer. By adjusting the induced magnetic anisotropy of the free magnetic layer to a more preferable value, an excellent magnetoresistive thin film magnetic element can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a substrate, an underlayer, and a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a first embodiment of the invention.

FIG. 2 is a configuration diagram showing a schematic configuration of an example of an apparatus for revolvingly forming an underlayer on a substrate.

FIG. 3 is a plan view showing the directional relationship of a magnetoresistive thin-film magnetic element with respect to the texture of an underlayer formed on a substrate in the apparatus having the configuration shown in FIG. 2;

FIG. 4 is a diagram showing a cross-sectional structure of an underlayer and a texture formed on a substrate.

FIG. 5 is a view showing a relative movement relationship between a target and a substrate in the substrate revolution film forming apparatus shown in FIG. 2;

FIG. 6 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a second embodiment of the invention.

FIG. 7 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a third embodiment of the invention.

FIG. 8 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a fourth embodiment of the invention.

FIG. 9 is a sectional view of a magnetoresistive thin-film magnetic element provided in a thin-film magnetic head according to a fourth embodiment of the present invention, as viewed from another direction.

FIG. 10 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a fifth embodiment of the invention.

FIG. 11 is a sectional view of a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a fifth embodiment of the present invention, as viewed from another direction.

FIG. 12 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a sixth embodiment of the invention.

FIG. 13 is a sectional view of a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a sixth embodiment of the present invention, as viewed from another direction.

FIG. 14 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a seventh embodiment of the invention.

FIG. 15 is a sectional view of a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a seventh embodiment of the present invention, as viewed from another direction.

FIG. 16 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to an eighth embodiment of the invention.

FIG. 17 is a sectional view of a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to an eighth embodiment of the present invention, as viewed from another direction.

FIG. 18 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a ninth embodiment of the present invention.

FIG. 19 is a sectional view of a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a ninth embodiment of the present invention as viewed from another direction.

FIG. 20 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a tenth embodiment of the invention.

FIG. 21 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to an eleventh embodiment of the present invention.

FIG. 22 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a twelfth embodiment of the present invention.

FIG. 23 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a thirteenth embodiment of the present invention;

FIG. 24 is a sectional view showing a magnetoresistive thin film magnetic element provided in a thin film magnetic head according to a fourteenth embodiment of the invention.

FIG. 25 is a diagram showing, for each step, an anisotropic magnetic field of a free magnetic layer in an embodiment of a magnetoresistive thin film magnetic element having a top type spin valve structure.

FIG. 26 is a view showing the exchange coupling magnetic field of the fixed magnetic layer of the magnetoresistive thin film magnetic element of the embodiment for each step.

FIG. 27 is a view showing the anisotropic magnetic field of the free magnetic layer in each step in the embodiment of the magnetoresistive thin film magnetic element having the bottom type spin valve structure.

FIG. 28 is a view showing the exchange coupling magnetic field of the fixed magnetic layer of the magnetoresistive thin film magnetic element of the embodiment for each step.

FIG. 29 is a diagram showing an RH curve in another example of a magnetoresistive thin film magnetic element having a bottom type spin valve structure.

FIG. 30 is a perspective view showing an example of a conventional thin film magnetic head including a magnetoresistive effect type thin film magnetic element.

FIG. 31 is a sectional view of the thin-film magnetic head shown in FIG. 30;

FIG. 32 is a perspective view showing a cross section of a main part of the thin-film magnetic head shown in FIG. 30;

[Explanation of symbols]

K: substrate, S3: underlayer, K1: original substrate, Tw: track width, MR1, MR2, MR3, MR4, MR5, MR6,
MR7, MR8, MR9, MR10, MR11, MR12, MR1
3, MR14: magnetoresistive thin film magnetic element, 2, 11,
28, 31, 44, 51, 80, 92, 108: antiferromagnetic layer, 3: fixed magnetic layer, 12, 27, 32, 52,
79 ... first fixed magnetic layer, 4, 15, 24, 35, 4
0, 55, 76, 96, 104 ... non-magnetic conductive layer, 5,
16, 21, 36 ... free magnetic layer, 62, 82, 13
0: Hard bias layer, 13, 26, 33, 42, 5
3, 59, 72, 78, 94, 100, 106: non-magnetic intermediate layer, 14, 25, 34, 54, 77: second fixed magnetic layer, 63, 83, 131: conductive layer , 112, 1
13, 114 ... sense current. 201: soft magnetic layer, 20
3, 210, 213 ... ferromagnetic layer, 204, 220, 2
31, 235... Antiferromagnetic layer, 211, 218, 233
..Nonmagnetic conductive layers, 217, 234... Free magnetic layers, 2
19, 232: fixed magnetic layer.

Claims (14)

(57) [Claims] A magnetoresistive thin-film magnetic element having a laminated body having a free magnetic layer and having an electric resistance that changes in response to a change in an external magnetic field is formed on a base layer of a substrate;
The underlayer is formed on the substrate by depositing particles generated from the target at the same time that the substrate is relatively moved with respect to the target, and at the time of forming the underlayer, the deposition region of the particles from the target is removed. The texture is formed in the direction that intersects the direction
The free magnetic layer of the magnetoresistive thin film magnetic element has a track width direction aligned in the direction of the texture . A thin film magnetic head having a magnetoresistive thin film magnetic element. 2. A magnetoresistive thin-film magnetic element having a laminated body provided with a free magnetic layer and having an electric resistance that changes in response to a change in an external magnetic field is formed on an underlayer of a substrate. Due to the accumulation of particles generated from the target
The texture formed is formed, and the free magnetic field of the magnetoresistive thin film magnetic element is oriented in the direction of the texture.
A thin-film magnetic head comprising a magnetoresistive thin-film magnetic element, wherein the track width directions of the conductive layers are aligned. 3. An antiferromagnetic layer, a fixed magnetic layer formed in contact with the antiferromagnetic layer and having a fixed magnetization in a fixed direction by an exchange coupling magnetic field generated by the antiferromagnetic layer, A magnetoresistive thin-film magnetic element including a free magnetic layer formed with a non-magnetic conductive layer interposed therebetween and having magnetization aligned in a direction intersecting with the magnetization direction of the fixed magnetic layer. The underlayer is formed on the substrate by depositing particles generated from the target at the same time that the underlayer moves the substrate relative to the target, and the underlayer moves from the target during formation of the underlayer. Texture in the direction that intersects with the direction in which the substrate passed through the deposition area of the particles
Are formed, and the track width of the free magnetic layer of the magnetoresistive thin film magnetic element is set in the direction of the texture.
A thin-film magnetic head comprising a magnetoresistive thin-film magnetic element, wherein the directions are aligned. 4. An antiferromagnetic layer, a fixed magnetic layer formed in contact with the antiferromagnetic layer and having magnetization fixed in a fixed direction by an exchange coupling magnetic field generated by the antiferromagnetic layer, A magnetoresistive thin-film magnetic element including a free magnetic layer formed with a non-magnetic conductive layer interposed therebetween and having magnetization aligned in a direction intersecting with the magnetization direction of the fixed magnetic layer. Provided on the stratum, and by deposition of particles generated from the target on the underlayer .
A thin-film magnetic head comprising a magnetoresistive thin-film magnetic element, wherein a texture formed is formed and the track width direction of the free magnetic layer is aligned in the direction of the texture. 5. The antiferromagnetic layer is made of an X-Mn alloy, Pt
-Mn-X 'alloy (where X is P
X ′ represents one selected from t, Pd, Ir, Rh, and Ru, and X ′ represents Pd, Ir, Rh, Ru, Au, Ag, Cr, Ni
Or one or more selected from 5. A thin-film magnetic head comprising the magnetoresistive thin-film magnetic element according to claim 1, wherein the thin-film magnetic head comprises: 6. An underlayer formed on the substrate is made of Al ₂
6. A thin-film magnetic head comprising the magnetoresistive thin-film magnetic element according to claim 1, wherein the thin-film magnetic head is made of O ₃ . 7. The texture of an underlayer formed in a direction perpendicular to a direction in which a substrate is passed through a deposition area of particles from the target. A thin-film magnetic head comprising the magnetoresistive thin-film magnetic element according to any one of the preceding claims. 8. The thin film magnetic element of the magnetoresistive effect type,
8. A dual structure in which a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer are formed on both sides in the thickness direction of the free magnetic layer, respectively. Thin-film magnetic head provided with the magneto-resistance effect type thin-film magnetic element of the present invention. 9. At least one of the pinned magnetic layer and the free magnetic layer is divided into two via a nonmagnetic layer, and the divided layers are in a ferrimagnetic state in which magnetization directions are antiparallel. A thin-film magnetic head comprising the magneto-resistance effect type thin-film magnetic element according to any one of claims 3 to 8. 10. A bias layer for aligning the direction of magnetization of a free magnetic layer is formed on both sides of a stacked body in which the antiferromagnetic layer, the nonmagnetic conductive layer, and the free magnetic layer are stacked. A thin-film magnetic head comprising the magnetoresistive thin-film magnetic element according to claim 3. 11. A method for manufacturing a thin film magnetic head by forming a magnetoresistive thin film magnetic element having an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, and a free magnetic layer on a base layer of a substrate. Yes, when depositing sputter particles generated from a target on a substrate to form an underlayer, the underlayer is deposited while moving the substrate through the sputter particle deposition region.
Go to the direction that intersects the substrate
Forming a base layer having a
It has a magnetic layer, fixed magnetic layer, non-magnetic conductive layer and free magnetic layer.
Forming a magnetoresistive thin film device was example, the track width direction of the free magnetic layer of the magnetoresistive thin film element
A method for manufacturing a thin-film magnetic head having a magnetoresistive thin-film magnetic element, wherein the thin-film magnetic head is aligned in the direction of the texture . 12. The magnetoresistive effect type according to claim 11, wherein induced magnetic anisotropy is imparted to the free magnetic layer by forming the free magnetic layer while applying a magnetic field in the track width direction. A method for manufacturing a thin-film magnetic head including a thin-film magnetic element. 13. An anti-ferromagnetic layer, after forming an anti-ferromagnetic layer, a pinned magnetic layer, a non-magnetic conductive layer and a free magnetic layer, performs an annealing process for applying an exchange coupling magnetic field to the pinned magnetic layer. A method for manufacturing a thin-film magnetic head comprising the magnetoresistive thin-film magnetic element according to claim 11. 14. After the annealing treatment of the antiferromagnetic layer for applying the exchange coupling magnetic field, a magnetic field is applied in the track width direction to anneal the free magnetic layer to impart induced magnetic anisotropy to the free magnetic layer. A method for manufacturing a thin film magnetic head comprising the magnetoresistive thin film magnetic element according to claim 13.