JP3202072B2 - Electric aluminum plating method - Google Patents

Electric aluminum plating method

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Publication number
JP3202072B2
JP3202072B2 JP25032792A JP25032792A JP3202072B2 JP 3202072 B2 JP3202072 B2 JP 3202072B2 JP 25032792 A JP25032792 A JP 25032792A JP 25032792 A JP25032792 A JP 25032792A JP 3202072 B2 JP3202072 B2 JP 3202072B2
Authority
JP
Japan
Prior art keywords
plating
aluminum
halide
bath
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25032792A
Other languages
Japanese (ja)
Other versions
JPH06101088A (en
Inventor
和彦 井田
仁 鈴木
あさを 小湊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Nippon Steel Nisshin Co Ltd
Original Assignee
Mitsubishi Chemical Corp
Nisshin Steel Co Ltd
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Filing date
Publication date
Application filed by Mitsubishi Chemical Corp, Nisshin Steel Co Ltd filed Critical Mitsubishi Chemical Corp
Priority to JP25032792A priority Critical patent/JP3202072B2/en
Publication of JPH06101088A publication Critical patent/JPH06101088A/en
Application granted granted Critical
Publication of JP3202072B2 publication Critical patent/JP3202072B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、アルミニウムを含有す
る組成物を用いてアルミニウムを効率的に電気めっきす
る方法に関する。
The present invention relates to a method for efficiently electroplating aluminum using a composition containing aluminum.

【0002】[0002]

【従来の技術】アルミニウムの電気めっきは、アルミニ
ウムの酸素に対する親和力が大きく、電位が水素より低
いので、水溶液系のめっき浴で行うことは困難である。
このため、従来よりアルミニウムの電気めっきは非水溶
液系のめっき浴、特に有機溶媒系のめっき浴で検討が行
われている。
2. Description of the Related Art Aluminum electroplating is difficult to perform in an aqueous plating bath because aluminum has a high affinity for oxygen and has a lower potential than hydrogen.
For this reason, electroplating of aluminum has conventionally been studied in a non-aqueous solution-based plating bath, particularly in an organic solvent-based plating bath.

【0003】この有機溶媒系のめっき浴としては、Al
Cl3 とLiAlH4 又はLiHとをエーテルに溶解し
たものや、AlCl3 とLiAlH4 とをテトラヒドロ
フランに溶解したものが代表的な一例である(例えば、
D.E.Couchら、J.Electroche
m.,99巻(6),234頁)。しかし、これらのめ
っき浴はいずれも浴中に非常に活性なLiAlH4 又は
LiHを含んでいるため、酸素や水分が存在すると、そ
れらと反応して分解し、電流効率が低下したり、浴の寿
命が短くなるという欠点があった。また、使用する有機
溶媒の沸点が低く、爆発や燃焼の危険性が高いという問
題点を有していた。
[0003] As an organic solvent-based plating bath, Al is used.
Representative examples are those in which Cl 3 and LiAlH 4 or LiH are dissolved in ether, and those in which AlCl 3 and LiAlH 4 are dissolved in tetrahydrofuran (for example,
D. E. FIG. Couch et al. Electroche
m. , 99 (6), 234). However, since these plating baths all contain very active LiAlH 4 or LiH in the bath, if oxygen or moisture is present, they react with them and decompose to lower the current efficiency, There is a disadvantage that the life is shortened. In addition, there is a problem that the boiling point of the organic solvent used is low and the risk of explosion and combustion is high.

【0004】さらに、他の一例として、トリエチルアル
ミニウムとNaFをトルエンに溶解しためっき浴も提案
されている(R.Suchentrunk,Z.Wer
kstofftech.,12巻,190頁)。しかし
ながら、この場合も危険性の高いトリエチルアルミニウ
ムの取り扱いに非常に問題があり、実用化は困難である
と考えられる。
Further, as another example, a plating bath in which triethylaluminum and NaF are dissolved in toluene has been proposed (R. Schuentrunk, Z. Wer.).
kstofftech. , Vol. 12, p. 190). However, also in this case, there is a very problem in handling highly dangerous triethylaluminum, and it is considered that practical use is difficult.

【0005】また、最近では、特開昭62−70592
号公報、特開平1−272788号公報、特開平1−2
72790号公報等に、オニウムハロゲン化物とアルミ
ニウムハロゲン化物とからなる低融点組成物をめっき浴
として用いた電気めっき方法が紹介されている。しかし
ながら、このようなめっき浴を用いる場合でも、水分の
混入により、めっき状態が大きく変化するため、その他
のめっき条件が一定であっても、常に良好なめっき被膜
を得ることはできない。
Recently, Japanese Patent Application Laid-Open No. Sho 62-70592 discloses
JP, JP-A 1-227788, JP-A 1-2
No. 72790 discloses an electroplating method using a low melting point composition comprising an onium halide and an aluminum halide as a plating bath. However, even when such a plating bath is used, the plating state changes greatly due to the incorporation of moisture, so that a good plating film cannot always be obtained even if other plating conditions are constant.

【0006】[0006]

【発明が解決しようとする課題】本発明の目的は、オニ
ウムハロゲン化物とアルミニウムハロゲン化物とからな
るめっき浴を用い、めっき条件を一定にしても、常に良
好で均一な品質のアルミニウムめっき被膜を得ることが
でき、実用化技術として容易に利用することができる電
気アルミニウムめっき方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to obtain a good and uniform quality aluminum plating film by using a plating bath composed of an onium halide and an aluminum halide even when plating conditions are fixed. An object of the present invention is to provide an electric aluminum plating method which can be easily used as a practical application technique.

【0007】[0007]

【課題を解決するための手段】本発明は、オニウムハロ
ゲン化物とアルミニウムハロゲン化物とを混合溶融した
低融点組成物をめっき浴として用い、浴中の水分量を2
wt%以下に維持しながら陰極にアルミニウムを析出さ
せることを特徴とする電気アルミニウムめっき方法であ
る。
According to the present invention, a low-melting composition obtained by mixing and melting an onium halide and an aluminum halide is used as a plating bath, and the amount of water in the bath is adjusted to 2%.
This is an electroaluminum plating method characterized in that aluminum is deposited on the cathode while maintaining the content at not more than wt%.

【0008】以下、本発明を詳細に説明する。本発明に
用いるオニウムハロゲン化物としては、例えば、テトラ
エチルアンモニウムブロマイド、トリメチルエチルアン
モニウムクロライド等の四級アンモニウム塩、ブチルピ
リジニウムクロライド等のピリジニウム塩、1ーエチル
ー3ーメチルイミダゾリウムクロライド等のイミダゾリ
ウム塩、エチルトリブチルホスホニウムブロマイド等の
ホスホニウム塩などを挙げることができる。
Hereinafter, the present invention will be described in detail. Examples of the onium halide used in the present invention include quaternary ammonium salts such as tetraethylammonium bromide and trimethylethylammonium chloride, pyridinium salts such as butylpyridinium chloride, imidazolium salts such as 1-ethyl-3-methylimidazolium chloride, and ethyl. Examples thereof include phosphonium salts such as tributylphosphonium bromide.

【0009】本発明に用いるアルミニウムハロゲン化物
とは、AlX3 (Xはハロゲン原子を表す)で示される
化合物で、具体的にはAlF3 、AlCl3 、AlBr
3 及びAlI3 を挙げることができる。
The aluminum halide used in the present invention is a compound represented by AlX 3 (X represents a halogen atom), specifically, AlF 3 , AlCl 3 , AlBr
3 and AlI 3 .

【0010】本発明に用いるめっき浴のアルミニウムハ
ロゲン化物の配合率は、20〜80モル%が好ましく、
オニウムハロゲン化物の配合率は、80〜20モル%が
好ましい。
The compounding ratio of the aluminum halide in the plating bath used in the present invention is preferably 20 to 80 mol%.
The compounding ratio of the onium halide is preferably from 80 to 20 mol%.

【0011】本発明は、上記めっき浴中の水分量を2w
t%以下、好ましくは、0.1wt%以上、1.5wt
%以下に維持しながら陰極にアルミニウムを析出させ
る。水分量が2wt%を超えるときには、白色の良好な
めっき被膜が得られない。なお、1.5wt%を超える
ときには、良好なめっき被膜が得られる電流密度の範囲
が狭くなる場合があり、0.1wt%未満にしてもそれ
に見合う効果の向上が認められない場合がある。
According to the present invention, the water content in the plating bath is set to 2 watts.
t% or less, preferably 0.1 wt% or more, 1.5 wt%
% Of aluminum is deposited on the cathode while maintaining the concentration at not more than 10%. When the water content exceeds 2 wt%, a good white plated film cannot be obtained. When the content exceeds 1.5 wt%, the range of the current density at which a good plating film can be obtained may be narrowed. Even when the content is less than 0.1 wt%, the effect corresponding to the improvement may not be recognized.

【0012】浴中の水分量を2wt%以下に維持する方
法としては、新液と入れかえる他、浴中の水分量を定量
しつつ、水分量の少ないめっき液を混合する方法を用い
ることができる。水分量の定量方法としては、赤外分光
光度計を用いて3360cm-1付近のO−H伸縮振動波
数を測定する定量法が望ましい。一般的な簡易水分定量
法であるカールフィッシャー法では、めっき液に混入し
た水分が水として存在していないため検出が困難であ
る。
As a method of maintaining the water content in the bath at 2 wt% or less, a method of mixing a plating solution with a small water content while quantifying the water content in the bath can be used in addition to replacing with a new solution. . As a method of quantifying the amount of water, a quantification method of measuring the O—H stretching vibration wave frequency near 3360 cm −1 using an infrared spectrophotometer is desirable. In the Karl Fischer method, which is a general simple moisture determination method, it is difficult to detect the moisture mixed in the plating solution because it does not exist as water.

【0013】赤外分光光度計に用いる測定セルは、Ca
2 、KRS−5(TlI、TlBr混合物)、As2
Se3 、Ge等の水に対する溶解度の小さい材質の液体
用密閉セルが好ましい。
The measuring cell used for the infrared spectrophotometer is Ca
F 2 , KRS-5 (TlI, TlBr mixture), As 2
A liquid closed cell made of a material having low solubility in water such as Se 3 and Ge is preferable.

【0014】めっき条件としては、直流又はパルス電流
により浴温0〜300℃、電流密度0.01〜50A/
dm2 で行うのが好ましく、電流効率がよくかつ均一な
めっきをすることができる。浴温が低すぎると均一なめ
っきとならず、また浴温が高すぎたり、電流密度が高す
ぎると、オニウムカチオンの分解、めっき層の不均一
化、さらには電流効率の低下が起り好ましくない。
The plating conditions are as follows: bath temperature 0 to 300 ° C., current density 0.01 to 50 A /
dm 2 is preferable, and uniform plating can be performed with good current efficiency. If the bath temperature is too low, uniform plating is not obtained, and if the bath temperature is too high or the current density is too high, onium cations are decomposed, the plating layer becomes non-uniform, and the current efficiency is lowered, which is not preferable. .

【0015】ストリップなどを均一に連続めっきする場
合、めっき浴にAlイオンを補給して、浴中のAlイオ
ン濃度を一定の範囲に保つ必要があるが、この場合、陽
極をアルミニウム製可溶性電極にすると通電量に応じて
Alイオンが自動的に補給され、アルミニウムハロゲン
化物の補給によらずともAlイオン濃度を一定の範囲に
保つことができる。
When a strip or the like is to be plated continuously continuously, it is necessary to supply Al ions to the plating bath to maintain the Al ion concentration in the bath within a certain range. In this case, the anode is connected to a soluble aluminum electrode. Then, Al ions are automatically replenished in accordance with the amount of energization, and the Al ion concentration can be kept within a certain range regardless of the replenishment of the aluminum halide.

【0016】低温で効率的にめっきする場合、めっき浴
の粘度を低下させるために、めっき浴に有機溶媒を添加
する方法が有効である。有機溶媒としては、ベンゼン、
トルエン、キシレン、クロルベンゼン等の不活性溶媒が
好ましく、添加量は5〜95vol%である。また、め
っき浴の導電率をあげるために、あるいはアルミニウム
めっき層を均一化するために、アルカリ金属又はアルカ
リ土類金属のハロゲン化物を添加する方法も効果的であ
る。アルカリ金属又はアルカリ土類金属のハロゲン化物
としては、例えば、LiCl、NaCl、NaF、Ca
Cl2 等を挙げることができ、添加量は0.1〜30モ
ル%である。
For efficient plating at a low temperature, it is effective to add an organic solvent to the plating bath in order to reduce the viscosity of the plating bath. As organic solvents, benzene,
Inert solvents such as toluene, xylene, and chlorobenzene are preferred, and the added amount is 5 to 95 vol%. It is also effective to add a halide of an alkali metal or an alkaline earth metal to increase the conductivity of the plating bath or to make the aluminum plating layer uniform. Examples of the alkali metal or alkaline earth metal halide include LiCl, NaCl, NaF, and Ca.
Cl 2 and the like can be mentioned, and the addition amount is 0.1 to 30 mol%.

【0017】[0017]

【実施例】以下に示す実施例1及び比較例1で用いるめ
っき液を次のようにして調製した。乾燥窒素雰囲気下で
合成した1−エチル−3−メチルイミダゾリウムクロラ
イド33モル%と、三塩化アルミニウム67モル%とか
らなるめっき液、及びこれに水1.5g、5.0g、
8.0g又は10.0gをさらに添加し、500gにし
ためっき液を各々調製した。
EXAMPLE A plating solution used in the following Example 1 and Comparative Example 1 was prepared as follows. A plating solution composed of 33 mol% of 1-ethyl-3-methylimidazolium chloride synthesized under a dry nitrogen atmosphere and 67 mol% of aluminum trichloride, and 1.5 g of water, 5.0 g of water,
8.0 g or 10.0 g was further added to prepare a 500 g plating solution.

【0018】次に、上記めっき液中の水分量を、As2
Se3 製液体用密閉セルを用いた赤外分光光度計で、3
360cm-1に現れる赤外吸収強度を測定することによ
り求めた。結果を表1に示す。なお、赤外吸収強度と水
分量の関係は、良好な直線性を示すことが認められた。
結果を図1に示す。
Next, the amount of water in the plating solution was determined as As 2
Infrared spectrophotometer using Se 3 liquid sealed cell
It was determined by measuring the infrared absorption intensity appearing at 360 cm -1. Table 1 shows the results. In addition, it was confirmed that the relationship between the infrared absorption intensity and the water content showed good linearity.
The results are shown in FIG.

【0019】[0019]

【表1】 [Table 1]

【0020】実施例1 調製しためっき液のうち、水分量が0.2wt%(水無
添加)、0.5wt%(水1.5g添加)、1.2wt
%(水5.0g添加)、1.8wt%(水8.0g添
加)のめっき液を用い、電気アルミニウムめっきを得
た。その結果、いずれのめっき液を用いても、白色の良
好なめっき被膜が得られた。水分量が0.5wt%のめ
っき液を用いて得られためっきの断面の走査型電子顕微
鏡写真を図2に示す。
Example 1 Of the plating solutions prepared, the water content was 0.2 wt% (no water added), 0.5 wt% (1.5 g water added), 1.2 wt%
% (Addition of 5.0 g of water) and 1.8 wt% (addition of 8.0 g of water) were used to obtain electric aluminum plating. As a result, a good white plated film was obtained using any of the plating solutions. FIG. 2 shows a scanning electron micrograph of a cross section of the plating obtained using a plating solution having a water content of 0.5 wt%.

【0021】また、これらのめっき液を用い、浴液60
℃でハルセル試験を行い、白色の良好なめっき被膜が得
られる電流密度範囲を求めた結果を表2に示す。
Further, using these plating solutions, a bath solution 60
Table 2 shows the results obtained by conducting a Hull cell test at 0 ° C. to determine a current density range in which a good white plated film can be obtained.

【0022】比較例1 調製しためっき液のうち、水分量が2.2wt%(水1
0.0g添加)のめっき液を用い、ハルセル試験を行っ
たが、全面的に黒色のめっきしか得られなかった。
Comparative Example 1 The prepared plating solution had a water content of 2.2 wt% (water 1
A Hull cell test was performed using a plating solution (0.0 g added), but only black plating was obtained over the entire surface.

【0023】実施例2 比較例1で用いた水分量が2.2wt%のめっき液20
0gに、実施例1で用いた、水分量が0.2wt%(水
無添加)のめっき液200gを混合してめっき液を調製
した。このめっき液中の水分量を赤外分光光度計で測定
したところ、0.6wt%(赤外吸収強度:0.38
7)であった。ハルセル試験を行い、白色の良好なめっ
き被膜が得られる電流密度範囲を求めた。結果を表2に
示す。
Example 2 A plating solution 20 having a water content of 2.2 wt% used in Comparative Example 1
The plating solution was prepared by mixing 200 g of the plating solution having a water content of 0.2 wt% (no water added) used in Example 1 with 0 g. When the amount of water in the plating solution was measured by an infrared spectrophotometer, it was 0.6 wt% (infrared absorption intensity: 0.38
7). A Hull cell test was performed to determine a current density range in which a good white plated film was obtained. Table 2 shows the results.

【0024】[0024]

【表2】 [Table 2]

【0025】[0025]

【発明の効果】本発明の方法によると、オニウムハロゲ
ン化物とアルミニウムハロゲン化物とからなるめっき浴
において、生産性よく常に良好なめっき状態を有するア
ルミニウムめっき被膜を得ることができる。
According to the method of the present invention, it is possible to obtain an aluminum plating film having good productivity and always good plating state in a plating bath composed of an onium halide and an aluminum halide.

【図面の簡単な説明】[Brief description of the drawings]

【図1】めっき浴中の水分量と赤外吸収強度の関係を示
すグラフである。
FIG. 1 is a graph showing the relationship between the amount of water in a plating bath and the infrared absorption intensity.

【図2】本発明の方法により得られた、めっき断面を示
す走査型電子顕微鏡写真である。
FIG. 2 is a scanning electron micrograph showing a plating cross section obtained by the method of the present invention.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小湊 あさを 茨城県稲敷郡阿見町中央8丁目3番1号 三菱油化株式会社 筑波総合研究所内 (56)参考文献 特開 平3−72100(JP,A) 特開 平4−254600(JP,A) 特開 昭62−70592(JP,A) 特開 平1−272788(JP,A) 特開 平1−272790(JP,A) 「applied spectros copy」Vol.32,No.4 (1978),p.362−366 (58)調査した分野(Int.Cl.7,DB名) C25D 3/66 C25D 21/14 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Asato Kominato 8-3-1 Chuo, Ami-cho, Inashiki-gun, Ibaraki Pref. Mitsubishi Tsuka Corporation Tsukuba Research Laboratory (56) References JP-A-4-254600 (JP, A) JP-A-62-70592 (JP, A) JP-A-1-272788 (JP, A) JP-A-1-272790 (JP, A) "Applied spectros" copy "Vol. 32, No. 4 (1978), p. 362-366 (58) Field surveyed (Int. Cl. 7 , DB name) C25D 3/66 C25D 21/14

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 オニウムハロゲン化物とアルミニウムハ
ロゲン化物とを混合溶融した低融点組成物をめっき浴と
して用い、赤外分光光度計を用いて3360cm -1 付近の
O−H伸縮振動波数を測定して前記めっき浴中の水分量
を測定し、前記水分量を2wt%以下に維持しながら、陰
極にアルミニウムを析出させることを特徴とする電気ア
ルミニウムめっき方法。
1. A low melting point composition obtained by mixing and melting an onium halide and an aluminum halide is used as a plating bath, and a composition having a viscosity of about 3360 cm -1 is measured using an infrared spectrophotometer .
Measure the OH stretching vibration wave number to determine the water content in the plating bath
, And depositing aluminum on the cathode while maintaining the water content at 2 wt% or less.
【請求項2】 上記低融点組成物が、アルミニウムハロ
ゲン化物20〜80モル%及びオニウムハロゲン化物8
0〜20モル%からなる請求項1記載の電気アルミニウ
ムめっき方法。
2. The composition according to claim 1, wherein the low melting point composition comprises 20 to 80 mol% of aluminum halide and onium halide 8
The electroaluminum plating method according to claim 1, comprising 0 to 20 mol%.
JP25032792A 1992-09-21 1992-09-21 Electric aluminum plating method Expired - Fee Related JP3202072B2 (en)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
JPH06101088A JPH06101088A (en) 1994-04-12
JP3202072B2 true JP3202072B2 (en) 2001-08-27

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Cited By (9)

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WO2011142338A1 (en) 2010-05-12 2011-11-17 住友電気工業株式会社 Method of manufacturing aluminum structure, and aluminum structure
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