JP3194230U - Heat treatment equipment - Google Patents

Abstract

The present invention provides a heat treatment apparatus capable of quickly changing a temperature when a heat plate for heat-treating a substrate is lowered by changing the type of the substrate. A front surface cooling nozzle that supplies gas toward the surface of a hot plate, a back surface cooling nozzle that supplies gas toward the back surface of the hot plate, and a temperature detection unit that detects the temperature of the hot plate. A control unit that performs control to start or stop the supply of the gas supplied from the front surface cooling nozzle and the rear surface cooling nozzle, and the control unit has a first set temperature set in the heat treatment of the substrate of the previous lot When the second set temperature for heating the substrate of the next lot is set to a lower temperature, gas supply from the front surface cooling nozzle and / or the rear surface cooling nozzle is started to the hot plate without the substrate, and at the latest When the set temperature of 2 is reached, the gas supply is stopped. [Selection] Figure 6

Description

  The present invention relates to a heating system in which a substrate is placed on a hot plate and heat treatment is performed, and the heating field is applied to the technical field for lowering the hot plate and the substrate after resist coating or development. -It relates to the technical field of developing devices.

  In a conventional coating / developing apparatus, a resist film is applied to the surface of a semiconductor wafer (hereinafter referred to as “wafer”), which is a semiconductor manufacturing process, and the resist is exposed in a predetermined pattern, and then a developer is supplied to the wafer. A photoresist process is performed in which a resist pattern is created by development. This process is generally performed using a system in which an exposure apparatus is connected to a coating / developing apparatus including a coating unit and a developing unit. The coating / developing apparatus is provided with a heating unit, and the wafer is subjected to a heat treatment according to the purpose in steps before and after the processing performed in the coating unit and the development unit.

  In the photoresist process, it is necessary to set the processing temperature of the heating unit according to the type of wafer. This temperature setting is performed at the time of wafer lot switching, and there are cases where the processing temperature is raised and where the processing temperature is lowered. When the processing temperature is increased, the output of the heater of the heating unit can be increased to raise the temperature in a short time. However, when the temperature is lowered, natural cooling requires a long time, so that the wafer is mounted. There is a method of shortening the time required for temperature setting (temperature cooling) by supplying purge gas to the back surface of the hot plate. However, in the method of cooling by supplying the purge gas to the back surface of the hot plate, there is a problem that the supply amount of the purge gas has to be increased in order to improve the temperature lowering rate.

  On the other hand, in Patent Document 1, after the heat treatment of the last wafer of the lot to be heat-treated is completed, gas is blown from the nozzle to the back surface of the heat plate of the heat treatment apparatus and the wafer is heated roughly above the heat plate. A configuration is disclosed in which a cooling plate for removing is moved to absorb radiant heat from a hot plate. Thereby, in the heat treatment apparatus of Patent Document 1, the hot plate is quickly cooled while suppressing the supply amount of the purge gas. However, since the gap between the back surface of the cooling plate and the upper surface of the hot plate is wide, it takes time to absorb the radiant heat, and there is a demand to increase the supply amount of the purge gas.

JP 2001-118789 A

  An object of the present invention is to provide a technique capable of quickly changing the temperature of a hot plate for heat-treating a substrate when the heat-treatment temperature is lowered by switching the type of the substrate.

  In the heat treatment apparatus of the present invention, in a heat treatment apparatus having a hot plate for heat-treating a substrate, a surface cooling nozzle that supplies gas toward the surface of the hot plate, and gas is supplied toward the back surface of the hot plate. A back surface cooling nozzle, a temperature detection unit that detects the temperature of the hot plate, and a control unit that performs control to start or stop the supply of the gas supplied from the front surface cooling nozzle and the back surface cooling nozzle, When the second set temperature for heat-treating the substrate of the next lot is set to a temperature lower than the first set temperature set in the heat treatment of the substrate of the previous lot, the control unit is in a state where there is no substrate. The gas supply is started from the front surface cooling nozzle and / or the rear surface cooling nozzle to the hot plate, and the gas supply is stopped when the second set temperature is reached at the latest.

In the heat treatment apparatus of the present invention, a heat plate for heat-treating the substrate and a transfer plate capable of cooling the substrate are provided, and the transfer plate is a home position where the substrate is transferred to and from an external transfer mechanism; In a heat treatment apparatus that moves by a drive mechanism between a hot plate where a substrate is transferred to and from the hot plate, gas is supplied toward the surface of the hot plate provided on the back surface of the transfer plate A cooling gas hole, a back surface cooling nozzle that supplies gas toward the back surface of the hot plate, a temperature detection unit that detects the temperature of the hot plate, and the gas supplied from the cooling gas hole and the back surface cooling nozzle. A control unit that performs control to start or stop the supply, and the control unit moves the transfer plate to the hot plate side above the hot plate in a state where there is no substrate, and heats the substrate of the previous lot. When the second set temperature for heating the substrate of the next lot is set to a temperature lower than the first set temperature set in step 1, the cooling gas holes or / and the The gas supply is started from the back surface cooling nozzle, and the gas supply is stopped when the second set temperature is reached at the latest.

  In the apparatus of the present invention, the control unit has a cooling surface determination temperature for determining whether to supply the gas only to the front surface and the back surface of the hot plate or the front surface or the back surface, and the second set temperature is If the temperature is lower than the first set temperature and not more than the cooling surface determination temperature, the gas is supplied toward both the front and back surfaces of the hot plate, and the second set temperature is higher than the first set temperature. If the temperature is lower than the cooling surface determination temperature, the gas is supplied toward one of the front surface and the back surface. The controller has a third set temperature that is higher than the second set temperature and lower than the cooling surface determination temperature, and the supply of the gas is stopped when the third set temperature is reached. It is characterized by that. A plurality of the surface cooling nozzles may be provided in a fan shape outside the hot plate.

  Furthermore, a plurality of cooling gas holes are provided on the back surface of the transfer plate toward the entire area of the hot plate, and the direction of the blowout holes is the moving direction of the transfer plate from the home position toward the hot plate. May be provided. The transfer plate may be provided with a cooling water flow path for cooling the transfer plate and the gas supply flow path. The supplied gas may be supplied together with the mist generated by ultrasonic vibration.

  According to the present invention, when the hot plate is forcibly cooled, the hot plate can be quickly cooled in a short time by blowing the gas to be cooled from both the front and back surfaces of the hot plate. Furthermore, since the surface to which the gas is supplied is switched depending on the difference in temperature change when the temperature is lowered, the gas is not excessively lowered and the amount of gas used is not wasted. Furthermore, by stopping the supply of gas before reaching the target temperature lowering set temperature, the time for temperature control for performing subsequent temperature adjustment can be shortened. By blowing gas from the entire back surface of the transfer plate that is approximately the same size as the surface of the heat plate of this heat treatment device and is movable upwards of the heat plate, the gas to be uniformly cooled can be applied to the heat plate, so that it can be promptly applied. The hot plate can be cooled in a short time. If this heat treatment apparatus can be applied to a coating / developing apparatus, it contributes to an improvement in overall processing efficiency.

It is a top view which shows the outline of the coating / developing apparatus of this embodiment. It is a perspective view which shows the outline of the coating / developing apparatus of this embodiment. It is a side view which shows the outline of the shelf unit of this embodiment. It is sectional drawing which shows the outline of the heating unit of this embodiment. It is a top view which shows the outline of the heating unit of this embodiment. It is sectional drawing in order to demonstrate the cooling state of the hot platen of this embodiment. It is a surface cooling nozzle plane arrangement drawing for cooling the surface concerning the present invention. It is sectional drawing and the plane of a transfer plate in order to demonstrate the cooling state of the hot plate by the transfer plate which is embodiment of this invention. It is the plane sectional view and sectional view which show the structure of the transfer plate of this invention. 3 is a flowchart of an embodiment of the present invention. It is a figure showing the temperature transition by which the hotplate temperature of this embodiment is cooled.

  An example of a coating / developing apparatus to which a heating system according to an embodiment of the present invention is applied will be described. FIG. 1 is a plan view of a resist pattern forming system configured by connecting a coating / developing apparatus and an exposure apparatus of this embodiment, and FIG. 2 is a schematic perspective view thereof. B1 in the figure is a carrier block for carrying in / out a carrier C1 in which, for example, 13 wafers W serving as substrates are hermetically stored, and the wafer W is transferred to and from the plurality of carrier mounting tables 120. And a transfer arm A1. 121 is a mechanism for opening and closing the lid of the carrier C1.

  A processing block B2 surrounded by a housing 122 is connected to the back side of the carrier block B1, and the processing block B2 includes shelf units U1, U2, U3, liquid processing units E1, E2, and a wafer W. Main arms A2 and A3, which are main transfer means for delivering the above. As shown in FIG. 2, the liquid processing units E1 and E2 are a general term for an antireflection film coating unit (BARC), a resist coating unit (COT), and a development unit (DEV). The antireflection coating unit is referred to as an antireflection coating unit, and the resist coating unit is referred to as a coating unit. The shelf units U1, U2, and U3 are configured by stacking a plurality of units for performing pre-processing and post-processing of the processing performed in the liquid processing units E1 and E2.

  As shown in FIG. 3, the shelf units U1, U2, and U3 include a heating unit 10a that is a heat treatment apparatus that performs a heat treatment that is a pre-treatment or a post-treatment of a liquid treatment, and a cooling unit that cools the heated wafer W ( CPL) and a delivery unit (TRS) having a stage for delivery. Examples of the heat treatment include heat treatment after resist coating (PAB), heat treatment before development (PEB), heat treatment after development (POST), and the like. In this embodiment, the heating unit 10a has a structure including a cooling plate 3 (see FIG. 4 described later) that also serves as a horizontal arm for performing rough heat removal on the wafer W heated by the hot plate. . The arms A1, A2, A3, and A4 described above and later will be able to transfer the wafer W between the arms via a transfer unit or the like. In FIG. 3, abbreviations for each unit are shown for convenience of explanation. Also, the number of units and the arrangement of the units are for convenience, and in an actual resist pattern forming system, they are set according to the processing time and the like. Each of the main arms A2 and A3 includes, for example, two arm bodies that can move forward and backward, and a main body portion that supports the arm bodies is configured to be movable up and down and about a vertical axis.

  An exposure apparatus B4 is connected to the back side of the shelf unit U3 of the processing block B2 via the interface block B3. The interface block B3 is a shelf unit configured by laminating transfer arms A4 and A5, a peripheral exposure device for selectively exposing only the edge portion of the wafer W, a delivery unit, a high-precision temperature adjustment unit, and the like. U4 and a buffer cassette CO for temporarily storing a plurality of, for example, 25 wafers W are provided. The units and arms of the carrier block B1, the processing block B2, and the interface block B3 are controlled by the control unit 110.

  The route until the wafer W is exposed in this resist pattern forming system is carrier C1 → TRS1 → BARC → CPL1 → COT → PAB → CPL2 → transfer arm A4, A5 → exposure device B4. The path after the exposure is interface block B3-> PEB-> CPL3-> DEV-> POST-> CPL4-> carrier C1. In the main arms A2 and A3, the wafer W is transferred between the units in a predetermined order in one cycle, and cycle transfer control is performed to move to the next cycle when one cycle is completed.

  Next, the heating unit 10a that performs, for example, PAB (heat treatment after resist coating), which is a heat treatment apparatus in the coating / developing apparatus according to the present embodiment, will be described as an example of changing the temperature. The heating unit 10a is provided in the shelf unit U2 as shown in FIG.

  The heating unit 10 a includes a processing container 1 as shown in FIGS. 4 and 5, and the processing container 1 is partitioned by a partition wall 11 and separated into an upper region 12 and a lower region 13. A loading / unloading port 14 for the wafer W is provided on the side wall on the upper region 12 side. If the area where the loading / unloading port 14 is formed is the front side of the apparatus, a hot plate 2 for heating the wafer W is provided on the back side of the apparatus inside the processing container 1, and the front side of the apparatus is heated. A transfer plate 3 capable of cooling the wafer W while performing rough heat removal (cooling) of the wafer W and moving from a home position where the wafer W is transferred by the main arm A2 to a position above the hot plate 2 is provided. It is arranged. The main arm A2 enters the heating unit 10a and enters the loading / unloading port 14 with an angle of, for example, 30 degrees in the -X direction with respect to the side wall of the processing container 1 of the heating unit 10a. And the wafer W is delivered.

  Three holes 21 are formed in the mounting surface on which the wafer W is mounted on the hot plate 2, and three holes for transferring the wafer W between the hot plate 2 and the cooling plate 3 are formed in the hole 21. The support pins 41 pass through the shaft. The hot plate 2 is provided with a plurality of heaters 22 for heating the hot plate 2 on the back surface and temperature sensors 22a for detecting the temperature of the hot plate 2 at positions where the hot plate 2 does not overlap with the hole 21. On the lower side, a lifting device 4 that lifts and lowers the support pin 41 and a plurality of back surface cooling nozzles 5 connected to a gas supply source (not shown) that supplies air gas that is a cooling gas to the back surface of the hot plate 2. Is provided.

  The transfer plate 3 includes a placement unit 31 on which the wafer W is placed, and a movement support unit 32 that moves and supports the placement unit 31, and the horizontally long groove portion in which the movement support unit 32 is provided on the partition wall 11. 11a is configured to be guided along a guide rail 33 provided in the lower region 13. The transfer plate 3 moves while being guided by the guide rail 33 by a driving device (not shown), and has a role of transporting the wafer W between the home position and the upper position of the hot plate 2. Further, the mounting portion 31 is formed with notches 31a and 31b so that the mounting portion 31 and the support pin 41 do not interfere with each other on a plane. Below the cutout portions 31a and 31b, as shown in FIG. 4, elevating pins 34 that are moved up and down by an elevating drive mechanism (not shown) are provided. The elevating pins 34 are lifted through the notches 31a and 31b to raise the wafer W on the transfer plate 3 so as to be separated from the transfer plate 3, and to descend to the transfer plate 3 and the main arm A2. The wafer W is transferred by the cooperation of the lift pins 34 and the main arm A2. In the heating unit 10a, the support pins 41 are raised to separate the wafer W from the hot plate 2 or the transfer plate 3, and the support pins 41 are lowered to place the wafer W on the hot plate 2 or the transfer plate 3. The wafer W is transferred by the cooperation of the support pins 41 and the transfer plate 3. A top plate 26 supported by the support portion 25 is disposed above the hot plate 2.

  An embodiment of the present invention will be described with reference to FIGS. FIG. 6 is a cross section of the heating unit 10a described above, and shows a state in which the wafer W of the next lot is not carried in when the processing lot is switched and there is no wafer W on the hot plate 2. A plurality of surface cooling nozzles 14 for discharging cooling air gas toward the hot plate 2 are provided above the hot plate 2 and on the side where the transfer plate 3 enters. The plurality of surface cooling nozzles 14 are arranged in a fan shape so as to face the vicinity of the center of the hot plate 2. This is because heat near the center of the hot plate 2 is difficult to escape and takes more time than the peripheral portion, so that the cooling time can be shortened by supplying air gas so as to aim at the side closer to the center. FIG. 7 shows the surface cooling nozzles 14a, b, c, d, e in the case where, for example, five nozzles arranged in a fan shape are provided, which are connected to the air gas supply source Sa and provided with a supply opening / closing valve Va in the middle. The valve Va can be opened by the signal from the cage control unit 110 to discharge air gas.

  Next, the configuration shown in FIGS. 8A and 8B will be described. Although the surface cooling nozzle 14 is not provided as described in FIG. 7, the transfer plate 3 is moved upward on the hot plate 2 side, and the transfer plate 3 enters from the plurality of cooling gas holes 16 provided on the back side of the transfer plate 3. Air gas is discharged in the same direction as the direction. By making it the same as the entrance direction of the transfer plate 3, it is possible to suppress the backflow of the air gas discharged to the transfer area for transferring the wafer W in the coating / developing apparatus. An exhaust port (not shown) is provided on the opposite side to the wafer W carry-in port of the heating unit 10a so as to exhaust the internal atmosphere.

  FIG. 8B shows a state of a plurality of cooling gas holes 16 provided in the transfer plate 3, and is configured to cover the entire area of the hot plate 2. Note that the cooling gas holes 16 may be provided only in the vicinity of the center of the transfer plate 3 or only in the tip portion into which the transfer plate 3 enters. 9A and 9B, the structure of the transfer plate 3 will be described in detail. For example, in the case of FIG. 9 (a), the air is supplied into the transfer plate 3 from the air gas supply source Sb by being divided into flow channel regions 17a, b, c which are flow channels for supplying three air gases. A supply opening / closing valve Vb is provided in the middle of being connected to the air gas supply source Sb, and the valve Vb can be opened by a signal from the control unit 110 to discharge air gas. FIG. 9B shows a cross-sectional structure of the transfer plate 3, which has a double structure in which a flow channel region 17 a is provided below the plate body 19 of the transfer plate 3. A cooling water flow path 18 for flowing cooling water, which is also a refrigerant, is embedded in the plate body 19, and cooling water is passed from a cooling water supply source (not shown). For this reason, since the air gas flow path and the cooling water flow path are close to each other, the air gas can be supplied in a cooled state. The cooling gas hole 16 is configured and opened so that air gas can be discharged obliquely in the traveling direction in which the transfer plate 3 moves to the hot plate 2. Moreover, the temperature can be lowered by efficiently removing the heat of the hot plate 2 by supplying the air gas by oscillating the ultrasonic wave with ultrasonic waves and supplying pure water or a solvent made into a mist-like mist. In this case, if the flow path is purged by switching to only air gas after the temperature is lowered, droplet formation can be prevented.

In the coating / developing apparatus of this embodiment, as shown in FIG. 1, a schedule conveyance program 112 and a temperature adjustment program 113 are stored in the control unit 110. The schedule transfer program 112 is a program for cyclically transferring the wafer W by the delivery arm A1, the main arm A2, and A3, and determines which unit is to be placed in which unit for each cycle. The temperature adjustment program 113 is a program for executing the processing recipe for each lot, the power supply control to the heater 22 to adjust the temperature of the heating unit 10a, and the opening / closing operation of the air gas supply valves Va and Vb. These programs are installed in the storage unit 111 of the computer, which is the control unit 110, via a storage medium.

  Along with the change of the lot of wafers W to be processed next, the temperature of the heating unit 10a of the previous lot is set to a second processing temperature (temperature setting of the next lot) lower than the first processing temperature (setting value before change). The temperature setting changing method for changing the setting to (value: set value after change) will be described with reference to the flowchart of FIG. In this embodiment, the PAB (post-coating heat treatment) of the heating unit 10a will be described as shown in FIG. 3, but the same applies to the PEB (post-exposure heat treatment) of the heating unit 10. In addition, although the three heat processing units 10a are provided, in the description of an effect | action, only the temperature adjustment method of the one heating unit 10a is demonstrated for convenience.

  In the heating unit 10a, the heat treatment of the wafer W of a certain previous lot is performed at the first processing temperature (for example, 140 ° C.), and the set time of the heat treatment elapses and the wafer W becomes the heat unit 10a. After being transferred to the cooling plate 3 and carried out, the hot plate 2 must be changed to the second processing temperature in order to heat-process the wafer W of the next lot. If the second processing temperature of the next lot is set and is lower than the temperature before the change (step S1), the control of the power supply to the heater 22 is stopped by the control unit 110 (step S2). If the temperature of the heat treatment of the previous lot (first set temperature) is, for example, 140 ° C. and the temperature of the heat treatment of the next lot (second set temperature) is, for example, 90 ° C., the process proceeds to step S2. Needless to say, the controller 110 monitors the temperature by the temperature sensor 22a even during the temperature change. If the second set temperature is 150 ° C. in step 1, the power supply is continued and the temperature is raised to 150 ° C. (step S9).

  Next, when cooling the hot plate 2, the temperature setting for controlling to supply the air gas only to either the front surface side or the back surface side when the front surface side and the back surface side are simultaneously cooled by supplying the air gas. Is input and stored as the cooling surface determination temperature in the control unit 110, and the temperature of the hot plate 2 detected by the temperature sensor 22a is compared with the cooling surface determination temperature (step S3). For example, when this setting is 130 ° C. (the difference from the first setting temperature is 10 ° C.), the second setting temperature is lower than the first setting temperature (step S1) and the temperature detected by the temperature sensor 22a. Is equal to or lower than the cooling surface determination temperature (when the temperature difference exceeds 10 ° C., for example), air gas is supplied to the back surface and the front surface of the hot plate 2 so that the temperature is quickly lowered (step S4). ). If the temperature difference is within 10 ° C., cooling either the back surface or the front surface is sufficient to lower the temperature, so that the temperature does not drop too rapidly and can be quickly brought close to the second set temperature. For example, air gas may be supplied only to the back surface (step S5). The cooling surface determination temperature may be set by a temperature difference from the first set temperature, and is configured to be arbitrarily performed.

  Next, a temperature at which the temperature of the hot plate 2 is higher than the second set temperature and lower than the cooling surface determination temperature is set as a third set temperature (for example, 93 ° C. (a value 3 ° C. higher than the second set temperature)). The temperature of the hot plate 2 input and stored in the controller 110 and detected by the temperature sensor 22a is compared with the third set temperature (step S6). Here, the air gas continues to be supplied until it is detected that the temperature of the hot plate 2 has entered within 3 ° C., and if it enters within 3 ° C., the supply of the air gas is stopped and left for cooling by heat radiation (step S7). . The air gas supply stop temperature (third set temperature) may be set by a temperature difference from the second set temperature, or may be set arbitrarily, for example, 1 ° C. When the temperature of the hot plate 2 reaches the second set temperature due to heat radiation cooling (step S8), the power supply to the heater 22 is started and the temperature adjustment control, for example, PID control is operated to adjust the temperature. In this state, the process waits until the process starts (step S9). If the temperature is within 3 ° C., the temperature adjustment control may be entered immediately, and the temperature regarded as overshoot may be controlled to the second set temperature.

  In this embodiment, how long it takes to adjust the temperature of the heating unit 10a is stored in advance in the temperature adjustment program 113 as the adjustment time, and the control unit 110 determines the wafer W of the next lot based on this adjustment time. The heat treatment start time is calculated, and the wafer W is set to be discharged from the coating unit COT. In the above description, the temperature adjustment of one (PAB) has been described, but in reality, a plurality of (PAB) are used, and each temperature adjustment is sequentially performed in each cycle shifted by one cycle. become.

  Next, the effect of this embodiment will be described with reference to FIG. FIG. 11 shows the temperature transition of the hot plate 2 in the above-described series of operations, with the horizontal axis indicating the elapsed time and the vertical axis indicating the temperature 2 of the hot plate. Ta and Tb are the first set temperature and the second set temperature, respectively. That is, after the last wafer W of the previous lot is transferred from the hot plate 2 to the transfer plate 3, the processing temperature used in the processing of the next lot is 10 ° C. higher than the first set temperature (eg, 140 ° C.) of the previous lot. This represents the temperature drop transition of the hot platen 2 after the lower second set temperature (for example, 100 ° C.) is set in the heating unit 10a. First, the power supply to the heater 22 is stopped. When this time is t0, as shown in the graph line G1, when cooling is performed by supplying air gas only to the back surface of the hot plate 2 as in the past, for example, it takes 130 seconds to lower the temperature from Ta 140 ° C. to Tb 100 ° C. If air gas is simultaneously supplied from the surface of the plate 2, the time can be shortened by 30 seconds as shown by the graph line G2. A graph line G3 indicates a case where mist that absorbs heat of the hot plate 2 and vaporizes is mixed with air gas to be described later, and indicates that further reduction in temperature reduction time can be expected.

  In this way, only the air gas may be discharged from the surface cooling nozzle 17 or the back surface of the transfer plate 3, or the effect of forcibly cooling can be improved by supplying mist-like mist at the same time. As a result, the cooling time can be shortened before the predetermined temperature adjustment, and the start time of the process processing of the next lot can be shortened, thereby contributing to the improvement of productivity.

1 Processing container 2 Hot plate 3 Transfer plate (cooling plate)
4 Lifting device 5 Purge gas supply ports 10, 10 a, 10 b, 10 c Heating unit 11 Partition wall 11 a Groove portion 12 Upper region 13 Lower region 14 Loading / unloading port 16 Cooling gas hole 18 Cooling water flow path 22 Heater 22a Temperature sensor 31 Mounting portion 32 Support for movement Unit 110 Control unit 112 Schedule transfer program 113 Temperature adjustment program A2, A3 Main arm B2 Processing block B3 Interface block E1, E2 Liquid processing unit U1, U2, U3, U4 Shelf unit Va, Vb Supply opening / closing valve W Wafer

Claims (8)

In a heat treatment apparatus having a hot plate for heat-treating a substrate,
A surface cooling nozzle for supplying gas toward the surface of the hot plate;
A back surface cooling nozzle for supplying gas toward the back surface of the hot plate;
A temperature detector for detecting the temperature of the hot plate;
A controller that performs control to start or stop the supply of the gas supplied from the front surface cooling nozzle and the rear surface cooling nozzle,
When the second set temperature for heat-treating the substrate of the next lot is set to a temperature lower than the first set temperature set in the heat treatment of the substrate of the previous lot, the control unit has no substrate. A heat treatment apparatus characterized by causing the hot plate to start supplying the gas from the front surface cooling nozzle and / or the rear surface cooling nozzle and stopping the supply of the gas when the second set temperature is reached at the latest. A heat plate for heat-treating the substrate and a transfer plate capable of cooling the substrate are provided, and the transfer plate is disposed between the hot plate and the home position where the substrate is transferred to and from the external transfer mechanism. In the heat treatment apparatus that is moved by the drive mechanism between the upper position of the hot plate where the delivery is performed,
A cooling gas hole that is provided on the back surface of the transfer plate and supplies gas toward the surface of the hot plate;
A back surface cooling nozzle for supplying gas toward the back surface of the hot plate;
A temperature detector for detecting the temperature of the hot plate;
A control unit that performs control to start or stop the supply of the gas supplied from the cooling gas hole and the back surface cooling nozzle,
The control unit moves the transfer plate above the hot plate in the absence of the substrate and heats the substrate of the next lot to a temperature lower than the first set temperature set in the heating process of the substrate of the previous lot. When the second set temperature to be processed is set, the supply of the gas is started from the cooling gas hole or / and the back surface cooling nozzle to the hot plate in a state where there is no substrate, and the second set temperature is reached at the latest. Then, the heat treatment apparatus is characterized in that the supply of the gas is stopped. The control unit has a cooling surface determination temperature for determining whether to supply the gas only to the front and back surfaces or the front surface or back surface of the hot plate,
If the second set temperature is lower than the first set temperature and equal to or less than the cooling surface determination temperature, the gas is supplied toward both the front surface and the back surface of the hot plate, and the second set temperature is 3. The heat treatment apparatus according to claim 1, wherein the gas is supplied toward one of the front surface and the back surface if the temperature is lower than the first set temperature and higher than the cooling surface determination temperature. . The control unit has a third set temperature that is higher than the second set temperature and lower than the cooling surface determination temperature,
The heat treatment apparatus according to claim 3, wherein the gas supply is stopped when the third set temperature is reached.   The heat treatment apparatus according to claim 1, wherein a plurality of the surface cooling nozzles are provided in a fan shape outside the hot plate.   A plurality of cooling gas holes are provided on the back surface of the transfer plate toward the entire area of the hot plate, and the direction of the blowout holes is such that the transfer plate moves from the home position toward the hot plate. The heat treatment apparatus according to claim 2, wherein the heat treatment apparatus is provided.   The heat treatment apparatus according to any one of claims 1 to 6, wherein mist generated by ultrasonic vibration is supplied to the gas together with the gas.   The heat treatment apparatus according to any one of claims 2 to 7, wherein a cooling water flow path for cooling the transfer plate and the gas supply flow path are provided close to the transfer plate. .

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