JP3175830B2 - One-way SAW filter - Google Patents

One-way SAW filter

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Publication number
JP3175830B2
JP3175830B2 JP27196089A JP27196089A JP3175830B2 JP 3175830 B2 JP3175830 B2 JP 3175830B2 JP 27196089 A JP27196089 A JP 27196089A JP 27196089 A JP27196089 A JP 27196089A JP 3175830 B2 JP3175830 B2 JP 3175830B2
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Japan
Prior art keywords
electrode
idt
floating electrode
floating
short
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JPH03133209A (en
Inventor
孝夫 森田
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東洋通信機株式会社
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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はSAWフィルタ,殊に浮き電極をもつ内部反射
型一方向性IDTを用いた低損失SAWフィルタに関する。
Description: TECHNICAL FIELD The present invention relates to a SAW filter, and more particularly to a low-loss SAW filter using an internal reflection type unidirectional IDT having a floating electrode.

(従来技術) 従来,VHF〜UHF帯の高周波領域に於ける広帯域低損失
フィルタとしてトランスバーサル型SAWフィルタが広く
用いられてきた。
(Prior Art) Conventionally, a transversal SAW filter has been widely used as a wideband low-loss filter in a high frequency range of a VHF to UHF band.

しかしながら,トランスバーサル型SAWフィルタは双
方向性損失のために挿入損失が大きくなる欠点があり,
低損失化を図るためには一方向性IDTを用いる必要があ
る。
However, transversal SAW filters have the disadvantage that insertion loss increases due to bidirectional loss.
In order to reduce the loss, it is necessary to use a unidirectional IDT.

この一方向性IDTとして広く使われている方法には3
相一方向性IDTやグループ型一方向性IDTがある。
There are three widely used methods for this one-way IDT.
There is a one-way IDT and a group-type one-way IDT.

しかしながら,前者は3つの位相をつくり出すための
複雑な移相器が必要である上圧電基板上に形成するパタ
ーンにブリッジオーバーする部分があり製造が困難であ
り,後者も90゜移相器が必要である上に接地するミアン
ダラインが長くなることに基づくオーミックな抵抗のた
め狭帯域フィルタを要求された場合IDT対数の増大によ
って対応することが事実上不可能であるという欠陥があ
った。
However, the former requires a complicated phase shifter to create the three phases, and the pattern formed on the piezoelectric substrate has a bridge-over part, making it difficult to manufacture. The latter also requires a 90 ° phase shifter. In addition, there is a defect that it is virtually impossible to cope with an increase in the IDT logarithm when a narrow band filter is required due to an ohmic resistance based on a long meander line grounded.

これに対して励起したSAWの電極内での反射を利用し
て波動が一方向に進むようにした内部反射型一方向性ID
Tは外部に移相器を要しないという利点はあるがダブル
電極としたIDTの一方はアルミニウム(Al)で他方は金
(Au)を付加して重くすることにより,IDTの励振の中心
位置と反射の中心位置をずらしSAWの前進方向では反射
波が同位相に,後退方向では逆位相になるようにして一
方向性を得るものであるため製造工程が増える上に正確
な電極アライメントを必要とし製造の歩留りが悪いとい
う欠点があった。
On the other hand, the internal reflection type one-way ID that allows the wave to travel in one direction using the reflection inside the electrode of the excited SAW
T has the advantage of not requiring an external phase shifter, but one side of the IDT made of double electrodes is made of aluminum (Al) and the other is made of gold (Au) to make it heavier. The center position of the reflection is shifted so that the reflected wave has the same phase in the forward direction of the SAW and has the opposite phase in the backward direction to obtain unidirectionality. Therefore, the number of manufacturing processes increases and accurate electrode alignment is required. There was a disadvantage that the production yield was poor.

これに対して山之内らはIDTの正負電極指の間に開放
型又は短絡型の浮き電極を入れ,且つ,その浮き電極の
位置を正負電極指の中心位置からずらすことにより一方
向性が得られることを見い出した。(文献〜電子通信学
会超音波研究会技術報告,US84−18,p.95(1984).) 更に山之内らは同文献に於いて,第2図に示すように
IDTの正負電極指2,2′の間に開放型の浮き電極3と短絡
型の浮き電極4を同時に挿入すると一方向性がより強く
なり低損失化に効果があることを示した。
On the other hand, Yamanouchi et al. Can obtain unidirectionality by inserting an open or short-type floating electrode between the positive and negative electrode fingers of the IDT and shifting the position of the floating electrode from the center of the positive and negative electrode fingers. I found something. (Literature-Technical Report of the Institute of Ultrasonics, IEICE, US84-18, p.95 (1984).) Yamanouchi et al.
It has been shown that the simultaneous insertion of the open floating electrode 3 and the short-circuit floating electrode 4 between the positive and negative electrode fingers 2, 2 'of the IDT enhances the unidirectionality and is effective in reducing the loss.

この浮き電極をもつ内部反射型一方向性IDTは通常のS
AWフィルタ同様に唯1回の蒸着とフォトエッチング加工
で電極形成ができ製造が容易であるという利点がある
が,IDT対数が少なくなると反射の効果が弱まり一方向性
が悪くなって挿入損失が大きくなるという欠点があり,
広帯域低損失フィルタに用いるには未だ不十分なもので
あった。
The internal reflection type unidirectional IDT with this floating electrode is
Like the AW filter, there is an advantage that the electrode can be formed by only one evaporation and photo-etching process and the manufacturing is easy.However, when the IDT logarithm is reduced, the reflection effect is weakened and the unidirectionality is deteriorated, and the insertion loss is increased Has the disadvantage of becoming
It was still insufficient for use in broadband low-loss filters.

(発明の目的) 本発明は上述した如き従来の浮き電極をもつ内部反射
型一方向性IDTの対数が少なくなると一方向性が弱くな
り挿入損失が大きくなるという欠点を解決するためにな
されたものであって,一方向性を更に強めることにより
高周波領域に於いて広帯域で低損失のSAWフィルタを提
供することを目的とする。
(Object of the Invention) The present invention has been made to solve the above-mentioned drawback that when the logarithm of the internal reflection type unidirectional IDT having a floating electrode is reduced, the unidirectionality is weakened and the insertion loss is increased. It is another object of the present invention to provide a low-loss SAW filter having a wide band in a high frequency region by further strengthening the unidirectionality.

(発明の概要) 上述の目的を達成する為、本発明に於いては浮き電極
を持つ内部反射型一方向性IDTの浮き電極のライン幅h
と電極ピッチpとの比h/pを開放型浮き電極については
0.6〜0.8とし、短絡型浮き電極については0.1〜0.3とし
た構成をとる。
(Summary of the Invention) In order to achieve the above object, in the present invention, the line width h of the floating electrode of the internal reflection type unidirectional IDT having the floating electrode is described.
The ratio h / p of the electrode pitch p to the open floating electrode
The configuration is 0.6 to 0.8, and the short-circuit type floating electrode is 0.1 to 0.3.

(発明の実施例) 以下,本発明を図面に示した実施例に基づいて詳細に
説明する。
Hereinafter, the present invention will be described in detail based on an embodiment shown in the drawings.

実施例の説明に先立ち,本発明の理解を助ける為,山
之内による従来の内部反射型一方向性IDTの構成とその
特性について少しく説明を加える。
Prior to the description of the embodiment, the configuration and characteristics of a conventional internal reflection type unidirectional IDT by Yamanouchi will be described a little in order to facilitate understanding of the present invention.

第2図は上記従来の内部反射型一方向性IDTの構成を
示す図であって,圧電基板1表面に形成した正負IDT電
極指2,2′の間に開放型浮き電極3及び短絡型浮き電極
4を配置し,これら各電極のライン幅と電極間スペース
の幅を全て同一,即ちライン幅もスペース幅も全てλ/1
2(λは励起したSAWの波長)とする。
FIG. 2 is a view showing the structure of the above-mentioned conventional internal reflection type unidirectional IDT, in which an open floating electrode 3 and a short type floating electrode are interposed between positive and negative IDT electrode fingers 2, 2 'formed on the surface of a piezoelectric substrate 1. The electrodes 4 are arranged, and the line width of each electrode and the width of the space between the electrodes are all the same, that is, both the line width and the space width are λ / 1.
2 (λ is the wavelength of the excited SAW).

このように構成した内部反射型一方向性IDを128゜Y
カット,X方向伝搬のLiNbO3基板上に形成すると励起した
SAWは大部分が図上5で示す方向に伝搬する。一般に前
記5で示す方向を“順方向”と称し逆の図上6で示す方
向を“逆方向”と称する。
The internal reflection type one-way ID configured as above is 128 ゜ Y
Cut was excited to form a LiNbO 3 substrate of X-propagating
Most of the SAW propagates in the direction indicated by 5 in the figure. Generally, the direction indicated by 5 is referred to as “forward direction”, and the direction indicated by 6 on the opposite figure is referred to as “reverse direction”.

ところでこのような構成の内部反射型一方向性IDTを
入出力IDTとしたフィルタを試作してその特性を調べた
結果,第3図に示す如く通過域に0.4dB程度のリップル
が生じた。
By the way, as a result of experimentally producing a filter using the internal reflection type one-way IDT having such a configuration as an input / output IDT and examining its characteristics, as shown in FIG. 3, a ripple of about 0.4 dB was generated in a pass band.

これは本実験に供した内部反射型一方向性IDTのトリ
プル・トランジット・エコ(TTE)に起因するものと考
えられる故未だSAW伝搬の一方向性が不充分であったこ
と前述の通りである。
This is considered to be due to the triple transit eco (TTE) of the internal reflection type unidirectional IDT used in this experiment, and as described above, the unidirectionality of SAW propagation was still insufficient. .

この問題を解決する為,先ずIDT電極指或は反射器の
ライン幅hの電極ピッチ(隣り合う電極との電極中心間
間隔)pに対する比h/pを変化させた場合伝搬する波動
の反射の程度を示す所謂モード間結合係数K12Pがどのよ
うな挙動を示すかについての文献(竹内等,音響学会講
演論文集,2−2−12,p.645,昭和60年3月)に掲げられ
た図(本明細書第4図)を参照する。
In order to solve this problem, first, when the ratio h / p of the line width h of the IDT electrode finger or the reflector to the electrode pitch (inter-electrode center distance between adjacent electrodes) p is changed, the reflection of the propagating wave is reduced. The literature on the behavior of the so-called mode coupling coefficient K 12 P indicating the degree is shown in the literature (Takeuchi et al., Proceedings of the Acoustical Society of Japan, 2-2-12, p.645, March 1985). Reference is made to the figure (FIG. 4 herein).

本図からも明らかな如く開放型電極についてはh/p,換
言すれば電極ライン幅hを電極間スペースに比して大と
した方が|K12P|が大となりそれだけ波動の反射が強まる
ことが示されている。
As is clear from this figure, for an open electrode, h / p, in other words, when the electrode line width h is larger than the interelectrode space, | K 12 P | becomes larger, and the wave reflection is increased accordingly. It has been shown.

一方,短絡型電極については逆に電極ライン幅hを小
とした方が波動の反射が強くなることが判る。上述した
如き事実を前述した従来の内部反射型一方向性IDTに適
用するならば,開放型浮き電極のライン幅を大に短絡型
浮き電極のそれを小にすれば波動伝搬の一方向性を一層
大ならしむることができるのではないかと考えられる。
On the other hand, for the short-circuit type electrode, it can be seen that the smaller the electrode line width h, the stronger the wave reflection. If the above-mentioned facts are applied to the above-mentioned conventional internal reflection type unidirectional IDT, if the line width of the open floating electrode is large and that of the short floating electrode is small, the unidirectionality of wave propagation will be improved. It may be possible to make it even bigger.

そこで第1図に示す如く,128゜YカットLiNbO3基板1
表面にAlによりIDT電極指2,2′を形成しその正負電極指
ライン幅はλ/12とすると共にこれらの間に同一ピッチ
(λ/6)にてライン幅R=3μm(≒0.109λ)の開放
型浮き電極7とライン幅S=1μm(≒0.036λ)の短
絡型浮き電極を配置するIDTを入出力IDTとするフィルタ
を製造しその周波数伝送特性を測定した。
Therefore, as shown in FIG. 1, the 128 ° Y-cut LiNbO 3 substrate 1
IDT electrode fingers 2, 2 'are formed of Al on the surface, and the line width of the positive and negative electrode fingers is λ / 12, and the line width R is 3 μm (≒ 0.109λ) at the same pitch (λ / 6) between them. A filter having an IDT as an input / output IDT in which an open floating electrode 7 and a short-circuit floating electrode having a line width S = 1 μm (≒ 0.036λ) are arranged was manufactured, and its frequency transmission characteristics were measured.

尚,前記IDT電極指2,2′には重み付けを施さず交叉幅
を50λ,Al電極は全て2%λとした。
The IDT electrode fingers 2, 2 'were not weighted, the cross width was 50λ, and the Al electrodes were all 2% λ.

第5図は上述の如く製造した本発明に係る内部反射型
一方向性IDTを入出力IDTとするフィルタの周波数伝送特
性を示す図であって,これと従来の内部反射型一方向性
IDTを用いたフィルタの特性を示す第3図と比較する
に,先ず通過域は平担で第3図に於いて認められた約0.
4dBのリップルは消滅し波動伝搬の一方向性が向上して
いることが判る。
FIG. 5 is a diagram showing the frequency transmission characteristics of the filter having the input / output IDT of the internal reflection type one-way IDT according to the present invention manufactured as described above.
In comparison with FIG. 3 showing the characteristics of the filter using the IDT, first, the passband is flat and about 0.2 V, which is recognized in FIG.
It can be seen that the ripple of 4 dB has disappeared and the unidirectionality of the wave propagation has been improved.

又,フィルタの挿入損失を比較するに従来のフィルタ
が3.2dBであったのに対し本発明に係るそれは2.6dBに向
上しておりこれも波動伝搬の一方向性の向上を裏付ける
ものである。
Also, comparing the insertion loss of the filter with that of the conventional filter was 3.2 dB, while that of the present invention was improved to 2.6 dB, which also supports the improvement of the unidirectionality of the wave propagation.

更に波動伝搬の一方向性の程度を明瞭に判定する為,
上述した従来のフィルタと本発明に係るそれにつき夫々
一方向性IDTの向きを反転対面したものを製造しその周
波数伝送特性を調べたのが第5図(第3図も同様)に示
す破線部である。
In order to clearly determine the degree of unidirectionality of wave propagation,
The dashed line shown in FIG. 5 (similarly in FIG. 3) was obtained by manufacturing the conventional filter described above and the filter according to the present invention in which the direction of the unidirectional IDT was reversed and their frequency transmission characteristics were examined. It is.

この結果から一方向性IDTを正しい方向に対面せしめ
た場合と反転対面せしめた場合との挿入損失の差異は従
来のフィルタに於いては約13dBであるのに対し本発明に
係るフィルタに於いては約17dBを示した。
From this result, the difference in insertion loss between the case where the unidirectional IDT faces in the correct direction and the case where the unidirectional IDT faces opposite is about 13 dB in the conventional filter, whereas in the filter according to the present invention. Showed about 17 dB.

このことは本発明に係る内部反射型一方向性IDTが励
起したSAW伝搬の一方向性が従来のそれより大幅に向上
していることを明示するものであって,本発明に係る内
部反射型一方向性IDTの有効性が裏付けられた。
This clearly indicates that the unidirectionality of the SAW propagation excited by the internal reflection type unidirectional IDT according to the present invention is greatly improved as compared with the conventional one. The effectiveness of one-way IDT is supported.

尚,開放,短絡浮き電極のライン幅をどの程度の値と
するのが最適であるかについては要求仕様(スペック)
と製造技術とによるであろうが,第4図を勘案するなら
ば電極膜厚H/λ=2%で,開放型についてはh/p=0.6〜
0.8,短絡型についてはh/p=0.1〜0.3程度であろう。
The required specification (spec) is to determine the optimal value of the line width of the open / short floating electrode.
In consideration of FIG. 4, the electrode thickness H / λ = 2%, and for the open type, h / p = 0.6 to
0.8, h / p = 0.1-0.3 for short-circuit type.

以上入出力IDT共正規型のSAWフィルタで説明したが本
発明は重みづけIDTに対しても適用可能であるし,又,3
トランスジューサ方式のフィルタに於いて中央に双方向
性の重みづけIDTを,両側に本発明による一方向性IDTを
用いても良い。
The input and output IDTs have been described above with reference to a normal type SAW filter. However, the present invention can be applied to a weighted IDT.
In a transducer type filter, a bidirectional weighted IDT may be used at the center, and a unidirectional IDT according to the present invention may be used at both sides.

又,本発明は128゜YカットLiNbO3基板だけでなく同
様な関係をもつ他の基板,例えばXカットであって112
゜Y方向伝搬のLiTaO3基板等にも適用可能である。
Further, the present invention is not limited to a 128 ° Y-cut LiNbO 3 substrate but also to other substrates having a similar relationship, for example, an X-cut LiNbO 3 substrate.
゜ It is also applicable to a LiTaO 3 substrate or the like propagating in the Y direction.

(発明の効果) 本発明は以上説明したように構成するので,高周波領
域に於いて広帯域で低損失のSAWフィルタを得る上で著
しい効果がある。
(Effect of the Invention) Since the present invention is configured as described above, there is a remarkable effect in obtaining a low-loss SAW filter in a wide band in a high frequency region.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明に係る浮き電極をもつ内部反射型一方向
性IDTの電極構成を示す図,第2図は従来の浮き電極を
もつ内部反射型一方向性IDTの電極構成を示す図,第3
図は第2図に示すIDTを用いたSAWフィルタの周波数伝送
特性を示す図,第4図は本発明の考察に用いたライン幅
とモード間結合係数との関係を示す図,第5図は本発明
に係るSAWフィルタの一実施例による周波数伝送特性を
示す図である。 1……圧電基板,2,2′……正負IDT電極指,3,7……開放
型浮き電極,4,8……短絡型浮き電極。
FIG. 1 is a diagram showing an electrode configuration of an internal reflection type unidirectional IDT having a floating electrode according to the present invention, FIG. 2 is a diagram showing an electrode configuration of a conventional internal reflection type unidirectional IDT having a floating electrode, Third
The figure shows the frequency transmission characteristics of the SAW filter using the IDT shown in FIG. 2, FIG. 4 shows the relationship between the line width and the inter-mode coupling coefficient used for consideration of the present invention, and FIG. FIG. 5 is a diagram illustrating frequency transmission characteristics according to an embodiment of the SAW filter according to the present invention. 1 ... Piezoelectric substrate, 2,2 '... Positive and negative IDT electrode fingers, 3,7 ... Open floating electrode, 4,8 ... Short floating electrode.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 山之内和彦、古屋敷博美「内部反射す だれ状電極−方向性変換器を用いた弾性 表面波フィルタ」電子通信学会技術研究 報告 US84−18,PP.95−100 竹内正男、山之内和彦「正負の反射係 数をもつ弾性表面波エレメントの構成 法」日本音響学会講演論文集,PP645 〜646 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References Kazuhiko Yamanouchi, Hiromi Furuyashiki "Surface acoustic wave filter using internal reflection interdigital transducer-directional transducer" IEICE Technical Report, US84-18, PP. 95-100 Masao Takeuchi, Kazuhiko Yamanouchi "Construction of Surface Acoustic Wave Elements with Positive and Negative Reflection Coefficients" Proceedings of the Acoustical Society of Japan, PP645-646.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】128゜YカットX伝搬LiNbO3基板上に弾性
表面波(SAW)を励振、受信するための入出力ディジタ
ル・トランスジューサ(IDT)電極を配置し、その少な
くとも1つのIDT電極の正負の電極指間に同一の電極ピ
ッチにて2つの浮き電極を設け、そのうち一方は開放
(オープン)型浮き電極で、他方は相隣接するもの同士
を短絡した短絡(ショート)型浮き電極である内部反射
型一方向性IDTを用いたSAWフィルタに於いて、 前記IDT電極と浮き電極とをアルミニウムにて構成し、
該浮き電極のライン幅hと前記電極ピッチpとの比h/p
を開放型浮き電極については0.6〜0.8とし、短絡型浮き
電極については0.1〜0.3としたことを特徴とする浮き電
極を持つ内部反射型一方向性IDTを用いたSAWフィルタ。
An input / output digital transducer (IDT) electrode for exciting and receiving a surface acoustic wave (SAW) is disposed on a 128 ° Y-cut X-propagating LiNbO 3 substrate, and at least one of the IDT electrodes has a positive / negative polarity. Two floating electrodes are provided at the same electrode pitch between the two electrode fingers, one of which is an open floating electrode and the other is a short-circuit floating electrode in which adjacent electrodes are short-circuited. In a SAW filter using a reflective unidirectional IDT, the IDT electrode and the floating electrode are made of aluminum,
The ratio h / p between the line width h of the floating electrode and the electrode pitch p
A SAW filter using an internal reflection type unidirectional IDT having a floating electrode, wherein the floating electrode is set to 0.6 to 0.8 and the short-circuit type floating electrode is set to 0.1 to 0.3.
JP27196089A 1989-10-19 1989-10-19 One-way SAW filter Expired - Lifetime JP3175830B2 (en)

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Application Number Priority Date Filing Date Title
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JPH03133209A JPH03133209A (en) 1991-06-06
JP3175830B2 true JP3175830B2 (en) 2001-06-11

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Publication number Priority date Publication date Assignee Title
JP3363937B2 (en) * 1992-03-26 2003-01-08 日本碍子株式会社 Surface acoustic wave filter device
JPH06237139A (en) * 1993-02-10 1994-08-23 Ngk Insulators Ltd Surface acoustic wave filter device
JP2915735B2 (en) * 1993-03-02 1999-07-05 和彦 山之内 Surface acoustic wave filter device
JPH06260873A (en) * 1993-03-03 1994-09-16 Kazuhiko Yamanouchi Surface acoustic wave filter device
JP3307455B2 (en) * 1993-03-22 2002-07-24 日本碍子株式会社 Surface acoustic wave filter device
JPH11330895A (en) * 1998-05-14 1999-11-30 Fujitsu Ltd Surface acoustic wave device
JP4561337B2 (en) * 2004-11-30 2010-10-13 エプソントヨコム株式会社 Unidirectional surface acoustic wave transducer and surface acoustic wave device using the same
JP5939928B2 (en) 2012-08-06 2016-06-22 大同メタル工業株式会社 Plain bearing
CN112653413A (en) * 2020-12-16 2021-04-13 武汉大学 System and method for adjusting effective electromechanical coupling coefficient of ultrahigh frequency bulk acoustic wave resonator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
山之内和彦、古屋敷博美「内部反射すだれ状電極−方向性変換器を用いた弾性表面波フィルタ」電子通信学会技術研究報告 US84−18,PP.95−100
竹内正男、山之内和彦「正負の反射係数をもつ弾性表面波エレメントの構成法」日本音響学会講演論文集,PP645〜646

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