JP3175514B2 - Positive resist material - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
It has high sensitivity to high energy rays such as lines, and can form patterns by developing with alkaline aqueous solution.
The present invention relates to a positive resist material suitable for fine processing technology.

[0002]

2. Description of the Related Art LSI
With the recent increase in integration and speed of chemicals, recently developed acids have been used as catalysts for chemical amplification.
resist material [for example, Liu (L
iu) et al., Journal of Vacuum Science and Technology (J. Vac. Sci. Tech)
nol. ), Volume B6, Page 379 (1988)]
It has excellent characteristics that it has sensitivity equal to or higher than that of conventional high-sensitivity resist materials, high resolution, and high dry etching resistance. Therefore, it is a particularly promising resist material for deep ultraviolet lithography. However, as a negative resist material, Shipley has already commercialized a three-component chemically amplified resist material (product name: SAL601ER7) composed of a novolak resin, a melamine compound, and an acid generator. There is no commercialized resist material yet. Therefore, LS
In the manufacturing process of I, the formation of wiring and gates can be handled with a negative resist material, but the formation of contact holes is difficult to perform using a negative resist material, so fine processing is difficult. There has been a strong demand for mold resist materials. Conventionally, Ito et al. Have developed a positive chemically amplified resist material by adding an onium salt to a resin called PBOCST in which the OH group of polyhydroxystyrene is protected with a t-butoxycarbonyl group (t-BOC group). ing.

However, the onium salt used contains antimony as a metal component [Reference: Polymers in Electronics, ACS Symposium Series (Polymers in Electrotrophy).
nics, ACS symposium Series
s) 242nd (American Chemical Society, Washington, DC.
1984), p. 11], from the viewpoint of preventing contamination of the substrate, the PBOCST resist material is not preferable in terms of process.

On the other hand, Ueno et al. Have disclosed a high sensitivity and high resolution deep ultraviolet chemically amplified positive resist material containing poly (p-styreneoxytetrahydropyranyl) as a main component (reference: No. 1). In the 36th Japan Society of Applied Physics related lectures, 1989, 1p-k-7), it was difficult to form a fine pattern with a high aspect ratio with high precision due to the mechanical strength of the pattern.

As described above, many chemically amplified positive resist materials based on novolak resin or polyhydroxystyrene and having sensitivity to far ultraviolet rays, electron beams and X-rays have been published. All are single-layer resists, and still have the problem of substrate steps, the problem of standing waves due to light reflection from the substrate, and the difficulty of forming patterns with high aspect ratios. .

Incidentally, a two-layer resist method is excellent for forming a pattern having a high aspect ratio on a stepped substrate.
In order to carry out alkali development by the two-layer resist method, a silicone-based polymer having a hydrophilic group such as a hydroxy group or a carboxyl group is required. Silanol having a hydroxy group directly attached to the silicone causes a crosslinking reaction by an acid. Therefore, application to a chemically amplified positive resist material has been difficult. Further, there is polyhydroxybenzylsilsesquioxane as a stable alkali-soluble silicone polymer, and a material in which a part of the hydroxy group is protected by t-BOC is a chemically amplified silicone positive type in combination with an acid generator. It is known to be a resist material (Japanese Unexamined Patent Publication (Kokai) No. 6-118551 or SPIE Vo).
l. 1925 (1993) 377). However, the polymers used in these silicone resist materials have a phenyl group and absorb at least ultraviolet rays, so that the transmittance of the resist film is low.
Therefore, it is difficult to achieve high sensitivity and high resolution for far ultraviolet exposure.

Japanese Patent Application Laid-Open No. 5-323611 discloses an example of a silicone positive resist material having no phenyl group as a base polymer. This base polymer is used to enable alkali development. Since all necessary hydrophilic groups such as a carboxyl group and a hydroxy group are protected, many protecting groups must be decomposed in order to dissolve the exposed part in a developing solution. Therefore, the amount of the acid generator to be added increases, or the sensitivity deteriorates. In addition, there is a high possibility of causing a change in the film thickness or the generation of stress or bubbles in the film when many protective groups are decomposed, and does not provide a resist which is highly sensitive and suitable for fine processing.

[0008] The present invention has been made in view of the above circumstances,
An object of the present invention is to provide a chemically amplified silicone-based positive resist material which is suitable as a two-layer resist material and has excellent sensitivity, high resolution, and excellent process applicability.

[0009]

The present inventors have made intensive studies to achieve the above object, and as a result, the use of a silicone polymer represented by the following general formula (1) as a silicone polymer has a high sensitivity. It is found that it is effective from the viewpoint of achieving high resolution and high resolution.

[0010]

Embedded image (In the formula, Q represents a t-butyl group, a t-butoxycarbonylmethyl group, a trimethylsilyl group or a tetrahydropyranyl group. X and m are x + m = 1, but x does not become 0. m> 0.)

That is, the present inventors have disclosed Japanese Patent Application Laid-Open No. Hei 6-1186.
Except for a silicone polymer having a phenyl group as disclosed in JP-A-51, a high transmittance to light in the far ultraviolet region is provided, and all of the alkali-soluble groups are not protected by acid labile groups, and are partially We intensively studied and searched for a polymer that protects and gives high sensitivity and high resolution. On the other hand, examples of the silicone polymer having no phenyl group include a silicone polymer having an ethyl carboxy group as disclosed in JP-A-5-323611. The hydrosilylation reaction of siloxane with an unsaturated carboxylic acid such as methacrylic acid mainly causes an addition reaction at the α-position of the unsaturated carboxylic acid, and it is difficult to obtain a silicone polymer as exemplified. Further, it is difficult to quantitatively perform the hydrosilylation reaction into the polymer, it is difficult to supply the silicone polymer stably, and further, it is difficult to control the quality of the resist.

The inventors of the present invention have conducted various studies, and as a result, have been able to obtain a desired polysiloxane skeleton by adding 2-cyanoethyltrichlorosilane, which is industrially easily available, to water and hydrolyzing it. Instead, it was found that the cyano group was simultaneously hydrolyzed to carboxylic acid under hydrochloric acid generated during the hydrolysis of trichlorosilane, and poly (2-hydroxycarbonylethyl) of the following formula (3)
Siloxane can be easily obtained, and the formula (3)
Is partially protected by a t-butyl group, a t-butoxycarbonylmethyl group, a trimethylsilyl group or a tetrahydropyranyl group, whereby the silicone polymer represented by the following general formula (1) has high sensitivity and high resolution. Have been found to be excellent as base resins for obtaining

[0013]

Embedded image (In the formula, Q, m, and x have the meanings described above.)

Accordingly, the present invention provides two components of the silicone polymer represented by the above general formula (1) and an acid generator which decomposes under the action of the irradiated radiation to generate an acid. Provided is a positive resist material that can be developed with an aqueous alkaline solution containing the same.

Hereinafter, the present invention will be described in more detail. The polymer used for the positive resist composition of the present invention is as follows:
It is a silicone polymer represented by the following general formula (1).

[0016]

Embedded image

Here, Q represents a t-butyl group, a t-butoxycarbonylmethyl group, a trimethylsilyl group or a tetrahydropyranyl group. Further, x and m are x + m = 1, but are positive numbers with x> 0 and positive numbers with m> 0. However, when x in the formula is small, the dissolution inhibiting effect is small, so that it is essential to add an inhibitor. x
Becomes large, the alkali solubility of the polymer decreases, so that an inhibitor is not required. x is preferably 0.05 to 0.5. If it is less than 0.05, the dissolution inhibiting effect is small, and
If it is larger, the oxygen plasma etching resistance may decrease with a decrease in the silicone content. Moreover, 0.
If it is larger than 5, the solubility in an alkaline aqueous solution is extremely reduced, and thus, the sensitivity may be extremely lowered in a commonly used developer.

The weight average molecular weight of the silicone polymer used in the present invention is preferably from 5,000 to 50,000. If it is less than 5,000, the desired plasma resistance may not be obtained, or the effect of inhibiting dissolution in an alkaline aqueous solution may be low. If it is more than 50,000, it may be difficult to dissolve in a general-purpose resist solvent. There is.

The silicone of the formula (1) hydrolyzes 2-cyanoethyltrichlorosilane as described above,
After condensation to obtain a poly (2-hydroxycarbonylethyl) siloxane of the formula (3), the poly (2-hydroxycarbonylethyl) siloxane can be obtained by protecting the carboxyl group.

Here, the method of protecting the carboxylic acid in the polymer with a t-butyl group can be easily achieved by reacting with butyl alcohol in the presence of trifluoroacetic anhydride.

The protection of a carboxylic acid with a t-butoxycarboxymethyl group can be easily carried out by reacting t-butyl bromoacetate in the presence of a base.

A method for protecting a carboxylic acid with a trimethylsilyl group is to react with trimethylsilyl chloride in the presence of a base such as triethylamine or pyridine.
It can be performed almost quantitatively.

The method of tetrahydropyranylation of a carboxylic acid can be easily carried out by reaction with dihydropyran in the presence of a weak acid.

The amount of the silicone polymer used in the present invention is at least 55% (% by weight, hereinafter the same) with respect to the total amount of both the three-component system and the two-component system combined with other components.
In particular, 80% or more is preferable. If the amount is less than 55%,
In some cases, the applicability of the resist material is poor or the strength of the resist film is poor.

In the present invention, far ultraviolet rays, electron beams, X
Decomposes to high-energy radiation such as
The resulting acid generator is compounded.
Oximesulfonic acid derivative, 2,6-dinitrobenzyl
Sulfonic acid derivative, naphthoquinone-4-sulfonic acid derived
2,4-bistrichloromethyl-6-aryl-
1,3,5-triazine derivative, α, α'-bisary
Rusulfonyldiazomethane and the like. But
Therefore, these acid generators can obtain highly sensitive resist materials.
In some cases, the following general formula (2) (R )_pJM ... (2) (where R Are the same or different aromatic or substituted aromatic groups
J represents sulfonium or iodonium, and M
Is a toluenesulfonate group or trifluoromethanes
Represents a rufonate group. p is 2 or 3. )
Onium salts are preferably used.

Examples of such onium salts include compounds represented by the following formula, and these can be used.

[0027]

Embedded image

However, any of these acid generators has low solubility in solvents which are generally used and suitable for coating resist materials such as ethyl cellosolve acetate, ethyl lactate, ethoxy-2-propanol and the like. It may be difficult to mix an appropriate amount into the material. In addition, even if the solubility in the solvent is high, it is difficult to form a good resist film because of poor compatibility with the silicone polymer, and during the heat treatment after light irradiation. Some of them have a drawback that a change in sensitivity and a change in pattern shape with the passage of time tend to occur. Particularly, in the case of an acid generator having poor compatibility, distribution occurs in the resist film, and overhang may be observed on the pattern surface. In a chemically amplified resist material, such a phenomenon often occurs when the acid is deactivated on the resist film surface or the acid generator is eliminated on the surface.

[0029] Accordingly, further preferably as an onium salt acid generator used, at least one of R ¹ ₃ CO- (R ¹ is an alkyl group having 1 to 10 carbon atoms for R in formula (2), an aryl group Substituted or unsubstituted monovalent hydrocarbon group)
And an onium salt of a phenyl group substituted with a t-alkoxy group, a t-butoxycarbonyloxy group, or a t-butoxycarbonylmethoxy group. These onium salts are easily soluble in general-purpose resist solvents and have good compatibility with silicone polymers as well as excellent solubility after exposure.
The pattern can be formed perpendicular to the substrate. At this time, since at least one of Rs in the general formula (2) is a t-alkoxyphenyl group, a t-butoxycarbonyloxyphenyl group, or a t-butoxycarbonylmethoxyphenyl group, a phenolic hydroxyl group or a carboxyl group is exposed during exposure and heat treatment. The generation of an acid improves the solubility after exposure. Generally, onium salts have a dissolution inhibiting effect, but these onium salts have a dissolution promoting effect after exposure. For this reason, the dissolution rate difference before and after exposure can be increased, so that it is preferably used. The solubility tends to be superior as the number of R substituted with a t-alkoxy group, a t-butoxycarbonyloxy group, or a t-butoxycarbonylmethoxy group increases.

In the general formula (2), at least one of Rs is a t-alkoxy group, a t-butoxycarbonyloxy group,
Alternatively, examples of the onium salt substituted with a t-butoxycarbonylmethoxy group include a compound represented by the following formula.

[0031]

Embedded image (Where Tf is trifluoromethanesulfonate, Tf
s represents p-toluenesulfonate, and t-BOC represents a t-butoxycarbonyl group. )

The content of the acid generator is 0.5 to 15
%, Especially 1 to 10%, is suitable. Even if less than 0.5%, positive resist characteristics are exhibited, but sensitivity is low. When the content of the acid generator increases, the resist sensitivity tends to increase, the contrast (γ) improves, and even if it exceeds 15%, the resist shows a positive resist characteristic. Sensitivity cannot be expected, onium salts are expensive reagents, an increase in low molecular components in the resist lowers the mechanical strength of the resist film, and oxygen plasma resistance also decreases. Content of 1
5% or less is suitable.

The resist composition of the present invention can be used not only as a two-component resist composition comprising a silicone polymer represented by the general formula (1) and an acid generator, but also a three-component resist composition containing a dissolution inhibitor as required. It can also be used as a system resist material.

As such a dissolution inhibitor, a known 3
The same material as the component resist material can be used. For example, a material obtained by converting the OH group of bisphenol A represented by the following formula into t-BOC, a material obtained by converting phloroglucin or tetrahydroxybenzophenone into t-BOC, or the like can be used. Can be used.

[0035]

Embedded image

The content of the dissolution inhibitor is preferably 40% or less.
In particular, it is preferably set to 10 to 30%. If it exceeds 40%, the oxygen plasma resistance of the resist film is significantly reduced, so that the resist film cannot be used as a two-layer resist.

The resist composition of the present invention can be prepared by dissolving the silicone polymer, the acid generator and, if necessary, the dissolution inhibitor in an organic solvent. As the organic solvent, these components are sufficiently dissolved. Preferably, the resist film is uniformly spread, specifically, butyl acetate, xylene, acetone, cellosolve acetate, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol dibutyl ether, diethylene glycol dimethyl ether, lactic acid Examples include ethyl, methyl lactate, propyl lactate, and butyl lactate. These organic solvents may be used alone or in combination of two or more. It is preferable that the amount of the organic solvent is several times the total amount of the above components.

The resist composition of the present invention may contain a surfactant or the like.

The pattern formation using the resist material of the present invention can be performed, for example, as follows. First, a resist solution of the present invention is spin-coated on a substrate, prebaked, and irradiated with high energy rays. At this time, the acid generator is decomposed to generate an acid. PEB (Post E
By performing xposure bake), the acid labile group is decomposed using the acid as a catalyst, and the dissolution inhibiting effect is lost. Next, development with an aqueous alkali solution and rinsing with water can form a positive pattern.

The resist of the present invention is also useful as a two-layer resist because it has excellent resistance to oxygen plasma etching by using a silicone polymer as a base resin.

That is, after forming a thick organic polymer layer as a lower resist on a substrate, the resist solution of the present invention is spin-coated thereon. The upper resist layer of the present invention is patterned by the same method as described above, and then the lower resist is selectively etched by etching, so that the upper resist pattern can be formed in the lower layer.

As the lower layer resist, a novolak resin-based positive resist can be used. After coating on the substrate, hard baking is performed at 200 ° C. for 1 hour to prevent intermixing with the silicone-based resist. it can.

[0043]

The positive resist composition of the present invention is sensitive to high-energy radiation, and has excellent sensitivity and resolution, and thus is useful for microfabrication using electron beams or far ultraviolet rays. Especially Kr
Because the absorption at the exposure wavelength of F excimer laser is small,
It is characterized in that a fine pattern that is perpendicular to the substrate can be easily formed. Further, because of its excellent oxygen plasma etching resistance, the two-layer resist obtained by applying the resist film of the present invention on the lower resist has a feature that a fine pattern can be formed with a high aspect ratio.

[0044]

[Examples] The present invention will be specifically described below with reference to synthesis examples and examples, but the present invention is not limited to the following examples.

[Synthesis Example 1] Synthesis of poly (2-hydroxycarbonylethyl) siloxane 188.5 g of 2-cyanoethyltrichlorosilane (1.
0 mol) was dissolved in 200 g of toluene and added dropwise to 500 g of water while stirring at room temperature. After completion of the dropwise addition, the mixture was aged by stirring at the reflux temperature of the reaction solution for 5 hours. After cooling,
An acidic aqueous layer was separated from the reaction mixture, and then the organic layer was washed with 1 liter of water, and further washed twice after the aqueous layer became neutral. The organic layer was separated, filtered, and then toluene was stripped using an evaporator to obtain a colorless oil, which was crystallized in water, filtered,
After drying, poly (2-hydroxycarbonylethyl)
The siloxane was obtained in a yield of 102.5 g (yield: 82%).

[0046] In IR of the resulting polymer, no absorption peak in the vicinity of a cyano group-specific 2,200Cm ^-1, and the absorption peak is observed in the carboxylic acid-specific 1,650Cm ^-1, in ¹³ C-NMR No unreacted cyano group was detected, indicating that the cyano group was quantitatively converted to carboxylic acid under the hydrochloric acid atmosphere generated during the hydrolysis of chlorosilane.

The weight average molecular weight of the obtained polymer was 6,250.

[Synthesis Example 2] t-butylation of poly (2-hydroxycarbonylethyl) siloxane 62.5 g of the polymer obtained in Synthesis Example 1 and 125 g (0.6 mol) of trifluoroacetic anhydride were added to acetone 250
Then, 60.7 g (0.08 mol) of t-butyl alcohol was gradually added while stirring at room temperature. After aging for 5 hours, unreacted t-butyl alcohol and acetone as a reaction solvent were stripped. The obtained reaction mixture was added to 1 liter of water for crystallization,
A polymer precipitate was obtained. The precipitate is washed twice more with water, filtered and
After drying, a t-butylated polymer of poly (2-hydroxycarbonylethyl) siloxane was obtained.

Analysis of the obtained polymer by NMR revealed that the t-butylation ratio was 21%.

Synthesis Example 3 t-butoxycarbonylmethylation of poly (2-hydroxycarbonylethyl) siloxane 62.5 g of the polymer obtained in Synthesis Example 1 and pyridine 4
7.4 g (6.0 mol) of dimethyl sulfoxide 25
The mixture was dissolved in 0 ml, and 15.2 g (0.078 mol) of t-butylbromoacetic acid was added with stirring at a reaction temperature of 80 ° C. After aging at 80 ° C. for 8 hours, the reaction mixture was added to 5 liters of water to obtain a white polymer. After washing the polymer twice with water, the polymer was filtered and dried. Analysis of the polymer by NMR showed that the carboxylic acid of poly (2-hydroxycarbonylethyl) siloxane was 1
The polymer was a 3% t-butoxycarbonylmethylated polymer.

Synthesis Example 4 Trimethylsilylation of Poly (2-hydroxycarbonylethyl) siloxane 62.5 g of the polymer obtained in Synthesis Example 1 and pyridine 4
7.4 g (6.0 mol) was dissolved in 250 ml of acetone, and 23.3 g (0.156 mol) of trimethylsilyl chloride was added with stirring under reflux. After aging for 5 hours under reflux, the reaction mixture was added to 1 liter of water to obtain a white polymer. After repeating washing with water twice, filtration and drying were performed. NMR of the obtained polymer
As a result, the polymer was obtained by subjecting the carboxylic acid of poly (2-hydroxycarbonylethyl) siloxane to 24% trimethylsilylation.

Synthesis Example 5 Tetrahydropyranylation of Poly (2-hydroxycarbonylethyl) siloxane 62.5 g of the polymer obtained in Synthesis Example 1 and 2.5 g of pyridinium tosylate were dissolved in 250 ml of acetone.
While stirring at room temperature, 43.5 g of dihydropyran (0.
5 mol) was added over 1 hour. After aging for 8 hours at room temperature, the reaction solution was stripped of acetone, dissolved in methanol and added to 5 liters of water to obtain a white precipitate. The precipitate was washed with water five times, filtered and dried to obtain tetrahydropyranylated poly (2-hydroxycarbonylethyl) siloxane, and analyzed by NMR. The introduction rate of the tetrahydropyranyl group was 1%.
It was 7.4%.

Example 1 Base resin (Synthesis Example 2) 96 parts by weight pt-butoxyphenyldiphenylsulfonium trifluoromethanesulfonate 4 parts by weight A resist solution comprising 600 parts by weight of 1-ethoxy-2-propanol was applied to a silicon substrate. 2,000rpm
m, and prebaked on a hot plate at 85 ° C. for 1 minute. The film thickness was 0.4 μm. KrF
After drawing with an excimer laser or an electron beam at an acceleration voltage of 30 kV, PEB was performed at 85 ° C. for 2 minutes. 2.4%
Of tetramethylammonium hydroxide (TMAH)
For 1 minute, and rinsed with water for 30 seconds.

The resist material exhibits a positive type characteristic,
The D ₀ sensitivity was 3.5 μC / cm ² . Instead of an electron beam, KrF excimer laser light (wavelength 2
Eth sensitivity when evaluated at 48 nm) is 3.2 mJ /
cm ² . The base resin used here exhibited a dissolution rate of 30 nm / s in the developer. In the present resist material, the unexposed portion had a dissolution rate of about 1.7 nm / s, and the exposed portion had a dissolution rate of 45 nm / s after PEB.

In the KrF excimer laser exposure, 0.2
The 5 μm line and space pattern and the hole pattern were resolved, and a pattern having a side wall perpendicular to the substrate could be formed. In electron beam writing, the resolution was 0.1 μm.

Examples 2 to 8 KrF resist characteristics were evaluated in the same manner as in Example 1 except that the base resin and the acid generator in Example 1 were changed as shown in Table 1. Table 1 shows the sensitivity and resolution.

Example 9 Base resin (Synthesis example 2) 80 parts by weight Dissolution inhibitor (1,3- (2-hydroxycarbonylethyl) -1,3-tetramethyldisiloxane) 16 parts by weight Tri (p) -T-butoxyphenyl) sulfonium trifluoromethanesulfonate 4 parts by weight 2-ethoxypropanol 700 parts by weight of a resist solution was applied to a silicon substrate at 2,000 rpm.
m, and prebaked on a hot plate at 85 ° C. for 1 minute. The film thickness was 0.4 μm. KrF
After drawing with an excimer laser or an electron beam at an acceleration voltage of 30 kV, PEB was performed at 85 ° C. for 2 minutes. 2.4%
Of tetramethylammonium hydroxide (TMAH)
For 1 minute, and rinsed with water for 30 seconds.

The resist material exhibits positive-type characteristics,
The D ₀ sensitivity was 4 μC / cm ² . Instead of an electron beam, KrF excimer laser light (wavelength 248 n
The D ₀ sensitivity as evaluated in m) was 5.0 mJ / cm ² .

In the KrF excimer laser exposure, 0.2
A 5 μm line and space pattern and a hole pattern were resolved, and a pattern having vertical side walls was formed. In electron beam writing, the resolution was 0.1 μm. Table 2 shows the results
Shown in

Examples 10 to 12 The KrF resist characteristics were evaluated in the same manner as in Example 2 except that the base resin in Example 9 was changed as shown in Table 2. Table 2 shows the sensitivity and the resolution.

[0061]

[Table 1]

[0062]

[Table 2]

Example 13 A resist solution having the same composition as in Example 1 was prepared, OFPR800 (manufactured by Tokyo Ohka Co., Ltd.) was applied as a lower layer resist on a silicon wafer to a thickness of 2 μm, and heated at 200 ° C. for 1 hour. And cured. The resist material of Example 1 was applied on the lower resist in a similar manner to Example 1 to a thickness of about 0.4 μm, and prebaked. Exposure and development were performed using an electron beam or a KrF excimer laser in the same manner as in Example 1 to form a pattern on the lower resist.

Thereafter, etching was carried out by a parallel plate type sputter etching apparatus using oxygen gas as an etchant gas. Etching rate of lower layer resist is 150nm / m
in, whereas the resist of the composition of Example 1 is 3n
m / min or less. By etching for 15 minutes, the lower layer resist that was not covered with the resist completely disappeared, and a two-layer resist pattern having a thickness of 2 μm or more was formed. The etching conditions are shown below. Gas flow rate: 50 SCCM, gas pressure: 1.3 Pa rf power: 50 W, dc bias: 450 V

[Examples 14 to 24] Under the same conditions as in Example 13, the resist material of Examples 2 to 8 was used as a two-layer resist instead of the resist of Example 1, and a similar pattern was formed. I was able to.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junji Tsuchiya 28-1 Nishifukushima, Oku-ku, Nakatsugi-mura, Niigata Pref. Shin-Etsu Chemical Co., Ltd. 28-1 Nishi-Fukushima Shin-Etsu Chemical Co., Ltd.Synthetic Technology Research Laboratory (72) Inventor Keijun Tanaka 1-6-1, Uchisaiwaicho, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (72) Yoshio Kawai Chiyoda, Tokyo Nippon Telegraph and Telephone Co., Ltd., 1-6, Uchisaiwai-cho, Nippon Telegraph and Telephone Corporation (72) Inventor Jiro Nakamura 1-1-6, Uchisaiwaicho, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (56) References (JP, A) JP-A-6-118651 (JP, A) JP-A-6-236033 (JP, A) JP-A-4-107460 (JP, A) JP-A-5-205 323611 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) G03F ^7/ 00-7/42

Claims (3)

(57) [Claims] [Claim 1] The following general formula (1) (In the formula, Q represents a t-butyl group, a t-butoxycarbonylmethyl group, a trimethylsilyl group or a tetrahydropyranyl group. X and m are x + m = 1, but x does not become 0. m> 0), and a positive resist material which can be developed with an aqueous alkali solution containing two components, a silicone polymer represented by the formula: and an acid generator which decomposes under the action of the irradiated radiation to generate an acid. 2. An acid generator according to the following general formula (2) (R) _p JM (2) (wherein R represents the same or different aromatic or substituted aromatic group, and J represents sulfonium or Indicates iodonium, M
Represents a toluenesulfonate group or a trifluoromethanesulfonate group. p is 2 or 3. 2. The material according to claim 1, which is an onium salt represented by the formula: 3. The material according to claim 1, further comprising a dissolution inhibitor.