JP3160420B2 - Method for producing Y123-type crystal film / multilayer film laminate - Google Patents
Method for producing Y123-type crystal film / multilayer film laminateInfo
- Publication number
- JP3160420B2 JP3160420B2 JP10857193A JP10857193A JP3160420B2 JP 3160420 B2 JP3160420 B2 JP 3160420B2 JP 10857193 A JP10857193 A JP 10857193A JP 10857193 A JP10857193 A JP 10857193A JP 3160420 B2 JP3160420 B2 JP 3160420B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- type crystal
- crystal
- film
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 239000013049 sediment Substances 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 28
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910002826 PrBa Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｙ１２３型結晶構造を
有する酸化物結晶の膜または多層膜積層体（多層構造
体）の作製方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an oxide crystal film having a Y123 type crystal structure or a multilayer film laminate (multilayer structure).
【０００２】[0002]
【従来の技術】従来において、Ｙ１２３型結晶構造を有
した酸化物結晶の薄膜または多層構造体を作製する場
合、基板上に蒸着法、スパッタリング法、ＣＶＤ法など
の薄膜形成技術により薄膜または多層膜積層体を作製し
ていた。2. Description of the Related Art Conventionally, when producing a thin film or a multilayer structure of an oxide crystal having a Y123 type crystal structure, a thin film or a multilayer film is formed on a substrate by a thin film forming technique such as an evaporation method, a sputtering method, or a CVD method. A laminate was being produced.
【０００３】[0003]
【発明が解決しようとする問題点】しかしながら、前記
従来の技術では、薄膜または多層膜積層体を作製するた
めには、真空蒸着装置、スパッタリング装置、ＣＶＤ装
置、分子線エピタキシー装置等の高価で操作性の悪い装
置を使わなければならないという問題があった。However, according to the above-mentioned prior art, in order to produce a thin film or a multilayer film stack, expensive and expensive operation such as a vacuum evaporation apparatus, a sputtering apparatus, a CVD apparatus and a molecular beam epitaxy apparatus is required. There was a problem that a device with poor performance had to be used.
【０００４】本発明は、前記問題点を解決するためにな
されたものであり、本発明の目的は、比較的安価な装置
で簡便に良質なＹ１２３型結晶構造を有する酸化物結晶
膜または良質なＹ１２３型結晶構造を有する酸化物結晶
多層膜積層体を作製することが可能な技術を提供するこ
とにある。The present invention has been made to solve the above problems, and an object of the present invention is to provide a high-quality oxide crystal film having a Y123 type crystal structure or a high-quality oxide crystal film with a relatively inexpensive apparatus. It is an object of the present invention to provide a technique capable of manufacturing an oxide crystal multilayer film laminate having a Y123 type crystal structure.
【０００５】本発明の前記ならびにその他の目的及び新
規な特徴は、本明細書の記述及び添付図面によって明ら
かにする。The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
【０００６】[0006]
【問題点を解決するための手段】前記目的を達成するた
めに、本発明のＹ１２３型結晶膜または請求項２に記載
の多層膜積層体の作製方法は、溶剤としてＢａＯ融液ま
たはＣｕＯ融液あるいはＢａＯとＣｕＯとの混合融液を
用い、前記酸化物結晶を構成している元素により構成さ
れた沈殿物であり、イットリウム元素に相当する構成元
素が、前記酸化物結晶中の濃度と同濃度もしくはそれよ
り高濃度に含有した物質である溶質供給物質から溶質を
溶剤を通して基板にまで輸送させ、Ｙ１２３型結晶構造
を有する酸化物結晶膜を、Ｙ１２３型結晶の沈殿物から
融液相を通した初晶で、基板上に成長させることを最も
主要な特徴とする。According to another aspect of the present invention, there is provided a Y123 type crystal film according to the present invention.
The method for producing a multilayer laminate of the above is a method of using a BaO melt, a CuO melt, or a mixed melt of BaO and CuO as a solvent, and comprising the element constituting the oxide crystal.
Is a sediment that has been deposited and is equivalent to the element yttrium.
Element has the same concentration or a higher concentration as that in the oxide crystal.
Ri solute was transported to the substrate through a solvent from a solute feed material is a material containing a high concentration, the oxide sintered Akiramaku with Y123 crystal structure, from the precipitate of Y123 type crystal
The primary feature is that it is a primary crystal that passes through the melt phase and grows on a substrate.
【０００７】前記ＢａＯとＣｕＯとの混合融液のＣｕＯ
のモル比は、６０％から８０％であることを特徴とす
る。[0007] CuO of the mixed melt of BaO and CuO
Is characterized by a molar ratio of 60% to 80%.
【０００８】前記溶質供給物質は、前記酸化物結晶を構
成している元素により構成された物質であり、イットリ
ウム元素に相当する構成元素が、前記酸化物結晶中の濃
度と同濃度またはそれより高濃度に含有した物質、また
はＹ２１１型結晶構造を有した物質であることを特徴と
する。The solute supply substance is a substance composed of the elements constituting the oxide crystal, and the constituent element corresponding to the yttrium element has a concentration equal to or higher than the concentration in the oxide crystal. It is characterized by being a substance contained at a concentration or a substance having a Y211 type crystal structure.
【０００９】前記基板は、アルカリ土類金属を構成元素
として含む酸化物またはＹ１２３型結晶構造を有した酸
化物結晶であることを特徴とする。The substrate is an oxide containing an alkaline earth metal as a constituent element or an oxide crystal having a Y123 type crystal structure.
【００１０】[0010]
【作用】前記手段によれば、溶剤としてＢａＯ融液また
はＣｕＯ融液あるいはＢａＯとＣｕＯの混合融液を用
い、前記酸化物結晶を構成している元素により構成され
た沈殿物であり、イットリウム元素に相当する構成元素
が、前記酸化物結晶中の濃度と同濃度もしくはそれより
高濃度に含有した物質である溶質供給物質から溶質を溶
剤を通して基板にまで輸送させ、Ｙ１２３型結晶構造を
有する酸化物結晶膜を、Ｙ１２３型結晶の沈殿物から融
液相を通した初晶で、基板上に成長させることにより、
良質のＹ系１２３型結晶構造を有する酸化物結晶膜を融
液相から成長させるので、良質のＹ系１２３結晶構造を
有する酸化物結晶膜を比較的安価な装置で操作性良く簡
便に作製することができる。According to the above means, a BaO melt, a CuO melt, or a mixed melt of BaO and CuO is used as a solvent and is composed of the elements constituting the oxide crystal.
Element, which is a precipitated sediment and corresponds to the element yttrium
Is equal to or higher than the concentration in the oxide crystal.
The solute is transported from the solute supply substance, which is a substance contained at a high concentration, to the substrate through the solvent, and the oxide crystal film having the Y123 crystal structure is melted from the precipitate of the Y123 crystal.
By growing on the substrate with the primary crystal through the liquid phase ,
Than Ru grown oxide crystal film having a Y-123 type crystal structure of good quality from the melt phase, the Y-123 crystal structure of good quality
The oxide crystal film can be easily produced with good operability using a relatively inexpensive apparatus.
【００１１】また、作製されたＹ１２３型結晶構造を有
する酸化物結晶膜の上にＹ系１２３型結晶構造を有する
酸化物結晶膜を成長させるので、良質のＹ系１２３型結
晶構造を有する酸化物結晶多層膜積層体を比較的安価な
装置で操作性良く簡便に作製することができる。Further, since an oxide crystal film having a Y-type 123 crystal structure is grown on the manufactured oxide crystal film having a Y123-type crystal structure, a high-quality oxide having a Y-type 123 type crystal structure can be obtained. A crystal multilayer film laminate can be easily manufactured with good operability using a relatively inexpensive apparatus.
【００１２】[0012]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１３】（実施例１）図１は、本発明によるＹ１２
３型結晶構造を有する酸化物結晶の膜を作製する方法の
実施例を説明するための実施装置の概略構成を示す模式
図を示す。(Embodiment 1) FIG. 1 shows a Y12 according to the present invention.
FIG. 1 is a schematic diagram illustrating a schematic configuration of an embodiment apparatus for describing an example of a method for manufacturing an oxide crystal film having a 3-type crystal structure.
【００１４】図１において、１は内径３０ｍｍ，高さ５
０ｍｍのイットリアるつぼであり、このるつぼ１１の材
質は、前記イットリアに限らず、マグネシア、アルミ
ナ、安定化ジルコニア等耐蝕性のある材質が使用でき
る。２は溶質供給物質としてＹ2ＢａＣｕＯ5、３は溶剤
とするＢａＯとＣｕＯとの混合融液としてＢａとＣｕの
モル比が３：５となるように炭酸バリウムと酸化銅を混
合し８８０度で４０時間仮焼した後の物質（液相）、４
はＳｍＢａ2Ｃｕ3Ｏ7-dからなる基板、５は引き上げ
棒、７は白金サセプタ、８は加熱用の高周波誘導コイル
である。In FIG. 1, reference numeral 1 denotes an inner diameter of 30 mm and a height of 5 mm.
The crucible 11 is a 0 mm yttria crucible, and the material of the crucible 11 is not limited to the above-mentioned yttria, and a material having corrosion resistance such as magnesia, alumina, and stabilized zirconia can be used. 2 is Y 2 BaCuO 5 as a solute supply material, 3 is a mixed melt of BaO and CuO as a solvent, and barium carbonate and copper oxide are mixed at 880 ° C. so that the molar ratio of Ba and Cu becomes 3: 5. Substance (liquid phase) after calcining for 40 hours, 4
Is a substrate made of SmBa 2 Cu 3 O 7 -d , 5 is a lifting rod, 7 is a platinum susceptor, and 8 is a high-frequency induction coil for heating.
【００１５】本実施例のＢａＯとＣｕＯとの混合融液を
用いて、液相から初晶で、Ｙ１２３型結晶構造を有する
酸化物結晶の膜を作製する方法は、図１に示すように、
まず、るつぼ１内の下部に、溶質供給物質としてＹ2Ｂ
ａＣｕＯ5２を入れ、その上部に、溶剤とするＢａＯと
ＣｕＯとの混合融液として、ＢａとＣｕのモル比が３：
５となるように炭酸バリウムと酸化銅を混合し８８０℃
で４０時間仮焼した後の物質３を入れる。前記ＢａとＣ
ｕのモル比は、３：５に限らず３：５から３：８程度ま
での量比でもよい。A method for producing a film of an oxide crystal having a Y123 type crystal structure from a liquid phase as a primary crystal using a mixed melt of BaO and CuO in this embodiment is as shown in FIG.
First, in the lower part of the crucible 1, Y 2 B
Put aCuO 5 2, on top, a molten mixture of BaO and CuO to solvent, the molar ratio of Ba and Cu is 3:
Barium carbonate and copper oxide are mixed so that the temperature becomes 5.
The substance 3 after calcining for 40 hours is added. Ba and C
The molar ratio of u is not limited to 3: 5 but may be a quantitative ratio of about 3: 5 to about 3: 8.
【００１６】前記るつぼ１内の下部に入れた物質と、そ
の上部に入れた物質の重量比は１：４である。この重量
比は１：２から１：１０程度でもよい。これらの溶質と
溶媒を入れたるつぼ１を約１０００℃に加熱し、溶剤を
溶解させた。この段階で、下部に溶質供給物質であるＹ
2ＢａＣｕＯ5が沈殿しており、上部に溶媒であるＢａＯ
とＣｕＯの混合物が液体状態を保っていた。この状態の
液相部分に基板として用いたＳｍＢａ2Ｃｕ3Ｏ7-d、ま
たは酸化マグネシウムの単結晶構造の表面を接触させ、
るつぼ１の温度を２０℃程度低下させることにより、基
板表面にＹ１２３型結晶構造を有する酸化物結晶の一種
であるＹＢａ2Ｃｕ3Ｏ7-dの膜を析出させることができ
た。The weight ratio between the substance put in the lower part of the crucible 1 and the substance put in the upper part is 1: 4. This weight ratio may be about 1: 2 to 1:10. The crucible 1 containing these solutes and the solvent was heated to about 1000 ° C. to dissolve the solvent. At this stage, the solute supply material Y
2 BaCuO 5 is precipitated, and the solvent BaO
And the mixture of CuO kept a liquid state. The surface of the single crystal structure of SmBa 2 Cu 3 O 7 -d or magnesium oxide used as a substrate was brought into contact with the liquid phase portion in this state,
By lowering the temperature of the crucible 1 by about 20 ° C., a film of YBa 2 Cu 3 O 7 -d , which is a kind of oxide crystal having a Y123 type crystal structure, could be deposited on the substrate surface.
【００１７】（実施例２）本実施例２は、前記実施例１
において作製したＹＢａ2Ｃｕ3Ｏ7-dの膜を基板とし
て、同様の方法を用いて、その基板の上にＰrＢａ2Ｃｕ
3Ｏ7-dの膜を作製した。このようにすることにより、単
一の膜のみならず、膜積層体を形成することができる。
また、本発明によれば、三層以上の多層膜積層体を作製
することが可能であることは、容易に推測できるであろ
う。また、各層は同種または異種であっても良い。(Embodiment 2) The present embodiment 2 is a modification of the first embodiment.
Using the YBa 2 Cu 3 O 7 -d film prepared in 1 above as a substrate, a PrBa 2 Cu
A 3 O 7 -d film was produced. By doing so, not only a single film but also a film stack can be formed.
Further, it can be easily presumed that according to the present invention, it is possible to produce a multilayer laminate having three or more layers. Further, each layer may be the same or different.
【００１８】前記本実施例１，２では、基板物質として
Ｙ１２３型結晶構造を有する酸化物結晶の一種であるＳ
ｍＢａ2Ｃｕ3Ｏ7-d結晶または酸化マグネシウムの結晶
を用いたが、結晶構造を有しない物質でも良い。また、
るつぼ１の温度を低下させるのではなく、基板４を１ｍ
ｍ程度上方に引き上げて基板４の温度だけを低下させる
ような手段によっても良い。In the first and second embodiments, S, which is a kind of oxide crystal having a Y123 type crystal structure, is used as a substrate material.
Although mBa 2 Cu 3 O 7 -d crystal or magnesium oxide crystal is used, a substance having no crystal structure may be used. Also,
Instead of lowering the temperature of the crucible 1, the substrate 4
Alternatively, the temperature may be raised by about m to lower only the temperature of the substrate 4.
【００１９】以上、本発明を実施例に基づき具体的に説
明したが、本発明は、前記実施例に限定されるものでは
なく、その要旨を逸脱しない範囲において種々変更し得
ることはいうまでもない。As described above, the present invention has been specifically described based on the embodiments. However, it is needless to say that the present invention is not limited to the above embodiments, and various changes can be made without departing from the gist of the present invention. Absent.
【００２０】また、本発明のＹ系１２３結晶構造を有す
る酸化物膜またはＹ系１２３結晶構造を有する酸化物多
層膜積層体の作製方法は、特に、超電導デバイス，超電
導磁気シールド等に適用すると有効である。The method for producing an oxide film having a Y-based 123 crystal structure or an oxide multilayer film having a Y-based 123-crystal structure according to the present invention is particularly effective when applied to a superconducting device or a superconducting magnetic shield. It is.
【００２１】[0021]
【発明の効果】以上、説明したように、本発明によれ
ば、良質のＹ系１２３結晶構造を有する酸化物結晶膜を
融液相から成長させることが可能となるので、良質の酸
化物結晶膜を比較的安価な装置で操作性良く簡便に作製
することができる。As described above, according to the present invention, it is possible to grow a high-quality oxide crystal film having a Y-based 123 crystal structure from the melt phase. The membrane can be easily manufactured with good operability using a relatively inexpensive apparatus.
【００２２】また、作製されたＹ１２３型結晶構造を有
する酸化物結晶膜の上にＹ系１２３結晶構造を有する酸
化物結晶膜を成長させるので、良質のＹ系１２３結晶構
造を有する酸化物結晶多層膜積層体を比較的安価な装置
で操作性良く簡便に作製することができる。Further, since the oxide crystal film having the Y-type 123 crystal structure is grown on the manufactured oxide crystal film having the Y123-type crystal structure, the oxide crystal multilayer having the high-quality Y-type 123 crystal structure is obtained. The film laminate can be easily manufactured with good operability using a relatively inexpensive device.
【図１】 本発明によるＹ１２３型結晶構造を有する酸
化物結晶膜を作製する方法の実施例１を説明するための
実施装置の概略構成を示す模式図。FIG. 1 is a schematic view showing a schematic configuration of an apparatus for explaining Example 1 of a method for producing an oxide crystal film having a Y123 type crystal structure according to the present invention.
１…内径３０ｍｍ，高さ５０ｍｍのイットリアるつぼ、
２…Ｙ2ＢａＣｕＯ5（溶質供給物質）、３…ＢａＯとＣ
ｕＯとの混合融液（溶剤）、４…ＳｍＢａ2Ｃｕ3Ｏ7-d
からなる基板、５…引き上げ棒、７…白金サセプタ、８
…加熱用の高周波誘導コイル。1 .... Yttria crucible with an inner diameter of 30 mm and a height of 50 mm
2 ... Y 2 BaCuO 5 (solute supply material), 3 ... BaO and C
Mixed melt (solvent) with uO, 4 ... SmBa 2 Cu 3 O 7 -d
Substrate consisting of 5 ... Pulling rod, 7 ... Platinum susceptor, 8
... High-frequency induction coil for heating.
フロントページの続き (73)特許権者 000003263 三菱電線工業株式会社 兵庫県尼崎市東向島西之町８番地 (72)発明者 山田 容士 東京都江東区東雲１丁目14番３ 財団法 人 国際超電導産業技術研究センター 超電導工学研究所内 (72)発明者 田上 稔 東京都江東区東雲１丁目14番３ 財団法 人 国際超電導産業技術研究センター 超電導工学研究所内 (72)発明者 中村 優 東京都江東区東雲１丁目14番３ 財団法 人 国際超電導産業技術研究センター 超電導工学研究所内 (72)発明者 塩原 融 東京都江東区東雲１丁目14番３ 財団法 人 国際超電導産業技術研究センター 超電導工学研究所内 (72)発明者 田中 昭二 東京都江東区東雲１丁目14番３ 財団法 人 国際超電導産業技術研究センター 超電導工学研究所内 (56)参考文献 特開 昭64−28300（ＪＰ，Ａ) 特開 平５−63247（ＪＰ，Ａ) 特開 平５−894（ＪＰ，Ａ) 特開 昭63−310798（ＪＰ，Ａ) 特開 昭63−310799（ＪＰ，Ａ) 特開 平１−249691（ＪＰ，Ａ) 特開 平１−257107（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 C01G 3/00 C01G 1/00 ＣＡ（ＳＴＮ) ＪＩＣＳＴファイル（ＪＯＩＳ)Continued on the front page (73) Patent holder 000003263 Mitsubishi Cable Industries, Ltd. 8-8 Nishinocho, Higashimukaijima, Amagasaki-shi, Hyogo (72) Inventor Yoji Yamada 1-14-3 Shinonome, Koto-ku, Tokyo International Superconductivity Industry Technology Research Center, Superconductivity Engineering Laboratory (72) Inventor Minoru Tagami 1-14-3 Shinonome, Koto-ku, Tokyo Foundation: International Superconductivity Technology Research Center, Superconductivity Engineering Laboratory (72) Inventor: Yu Nakamura 1 Shinonome, Koto-ku, Tokyo Chome 14-3 Foundation, International Superconducting Technology Research Center, Superconductivity Engineering Research Laboratory (72) Inventor Minoru Shiohara 1-1-14, Shinonome, Koto-ku, Tokyo Foundation, International Superconducting Technology Research Center, Superconductivity Engineering Laboratory (72) Inventor Shoji Tanaka 1-14-3 Shinonome, Koto-ku, Tokyo Foundation International Superconducting Technology Research Center Inside the Superconducting Engineering Laboratory (56) References JP-A-64-28300 (JP, A) JP-A-5-63247 ( JP JP-A-5-894 (JP, A) JP-A-63-310798 (JP, A) JP-A-63-310799 (JP, A) JP-A-1-249691 (JP, A) 1-257107 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C30B 1/00-35/00 C01G 3/00 C01G 1/00 CA (STN) JICST file (JOIS)
Claims (5)
あるいはＢａＯとＣｕＯの混合融液を用い、溶質供給物
質から溶質を溶剤を通して基板にまで輸送させ、Ｙ１２
３型結晶構造を有する酸化物結晶膜を、Ｙ１２３型結晶
の沈殿物から融液相を通した初晶で、基板上に成長させ
るＹ１２３型結晶膜の作製方法であって、前記溶質供給
物質は、前記酸化物結晶を構成している元素により構成
された沈殿物であり、イットリウム元素に相当する構成
元素が、前記酸化物結晶中の濃度と同濃度もしくはそれ
より高濃度に含有した物質であることを特徴とするＹ１
２３型結晶膜の作製方法。1. Using a BaO melt, a CuO melt, or a mixed melt of BaO and CuO as a solvent, transporting a solute from a solute supply material to a substrate through a solvent,
An oxide crystal film having a 3-type crystal structure is formed by a Y123-type crystal.
A method for producing a Y123-type crystal film grown on a substrate as a primary crystal through a melt phase from a precipitate of
The substance is composed of the elements constituting the oxide crystal.
Is a sediment that has been deposited and is equivalent to the element yttrium.
The concentration of the element is equal to or higher than the concentration in the oxide crystal;
Y1 characterized by being a substance contained at a higher concentration
A method for producing a 23-type crystal film.
あるいはＢａＯとＣｕＯの混合融液を用い、溶質供給物
質から溶質を溶剤を通して基板にまで輸送させ、Ｙ１２
３型結晶構造を有する酸化物結晶膜を、Ｙ１２３型結晶
の沈殿物から融液相を通した初晶で、基板上に成長さ
せ、この酸化物結晶膜上にＹ１２３型結晶構造を有する
酸化物結晶膜を成長させるＹ１２３型結晶多層膜積層体
の作製方法であって、前記溶質供給物質は、前記酸化物
結晶を構成している元素により構成された物質であり、
イットリウム元素に相当する構成元素が、前記酸化物結
晶中の濃度と同濃度もしくはそれより高濃度に含有した
物質であることを特徴とするＹ１２３型結晶多層膜積層
体の作製方法。2. Using a BaO melt, a CuO melt, or a mixed melt of BaO and CuO as a solvent, transporting a solute from a solute supply material to a substrate through a solvent,
An oxide crystal film having a 3-type crystal structure is formed by a Y123-type crystal.
A Y123-type crystal multilayer laminate in which a primary crystal that has passed through a melt phase from the precipitate of the above is grown on a substrate, and an oxide crystal film having a Y123-type crystal structure is grown on the oxide crystal film
Wherein the solute supply material comprises the oxide
It is a substance composed of the elements constituting the crystal,
The constituent element corresponding to the yttrium element is the oxide
Concentration equal to or higher than the concentration in the crystal
A method for manufacturing a Y123-type crystal multilayer film laminate, which is a substance .
Ｏのモル比は、６０％から８０％であることを特徴とす
る請求項１に記載のＹ１２３型結晶膜または請求項２に
記載の多層膜積層体の作製方法。3. The Cu of the mixed melt of BaO and CuO
3. The method for producing a Y123-type crystal film according to claim 1, wherein the molar ratio of O is from 60% to 80%.
造を有した物質であることを特徴とする請求項１に記載
のＹ１２３型結晶膜または請求項２に記載の多層膜積層
体の作製方法。4. The method according to claim 1, wherein the solute supply material is a Y211 type crystal structure.
The method for producing a Y123-type crystal film according to claim 1 or a multilayer film laminate according to claim 2, wherein the material has a structure .
素として含む酸化物であることを特徴とする請求項１に
記載のＹ１２３型結晶膜または請求項２に記載の多層膜
積層体の作製方法。 5. The substrate according to claim 1, wherein said substrate is made of an alkaline earth metal.
The method for producing a Y123-type crystal film according to claim 1 or a multilayer film laminate according to claim 2, wherein the oxide is an oxide containing silicon .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10857193A JP3160420B2 (en) | 1993-05-10 | 1993-05-10 | Method for producing Y123-type crystal film / multilayer film laminate |
| EP94303318A EP0624664B1 (en) | 1993-05-10 | 1994-05-09 | Method of preparing metal oxide crystal |
| US08/240,068 US5602081A (en) | 1993-05-10 | 1994-05-09 | Method of preparing metal oxide crystal |
| DE69415716T DE69415716T2 (en) | 1993-05-10 | 1994-05-09 | Process for producing a metal oxide crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10857193A JP3160420B2 (en) | 1993-05-10 | 1993-05-10 | Method for producing Y123-type crystal film / multilayer film laminate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06321694A JPH06321694A (en) | 1994-11-22 |
| JP3160420B2 true JP3160420B2 (en) | 2001-04-25 |
Family
ID=14488198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10857193A Expired - Fee Related JP3160420B2 (en) | 1993-05-10 | 1993-05-10 | Method for producing Y123-type crystal film / multilayer film laminate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3160420B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3881732B2 (en) * | 1996-10-16 | 2007-02-14 | 財団法人国際超電導産業技術研究センター | Method for producing oxide superconductor composite |
-
1993
- 1993-05-10 JP JP10857193A patent/JP3160420B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06321694A (en) | 1994-11-22 |
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