JP3157100B2 - Surface analysis method and device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method and an apparatus for analyzing a surface of a sample by shaving the surface of the sample by sputtering and analyzing the sample in a depth direction.

[0002]

2. Description of the Related Art As a surface analysis method for shaving the surface of a sample by sputtering and analyzing the sample in the depth direction, a method in which sputtering and analysis are alternately performed is described as A.
ES (Auger electron spectroscopy), ESCA (X-ray electron spectroscopy), and SIMS (Secondary Ion Mass Spectroscopy) for simultaneously performing sputtering and analysis are known (for example, JP-A-5-273157). 5-1.
35736, JP-A-6-124683).
In each of these surface analysis methods, as shown in FIG. 8, a surface 112a of a sample 112 is irradiated with an ion beam 110 for sputtering from a certain direction, and the sample surface 1a is irradiated.
12a is shaved, and elemental analysis in the depth direction is performed on the shaved region 123.

[0003]

However, in the conventional surface analysis method, the ion beam 1 for sputtering is not used.
Since 10 is irradiated on the sample surface 112a from a fixed direction, large irregularities are generated on the sputtering surface 124 due to the difference in crystal orientation and the difference in constituent elements in the region 123 irradiated with the ion beam 110. For this reason, there is a problem that the resolution in the depth direction is reduced. For example, as shown in FIG. 11, when a sample 112 having an Al layer 121 on a silicon oxide film 120 is subjected to elemental analysis in the depth direction,
The resolution (interface resolution) in the depth direction of the interface between the layer 121 and the silicon oxide film 120 is relatively large at about 0.4 μm. In FIG. 11, the interface resolution is defined as a range in which the change in oxygen (O) intensity is 16% to 84% of the total change in intensity (100%).

Here, as shown in FIG. 9, a sample 112 is mounted on a sample table 111 and rotated around a rotation axis 113, and an ion beam 110 from a fixed ion beam source for sputtering is applied to a sample surface 112a. (This method is called Zara rotation method and is described in an application note of ULVAC-PHI, Inc.). According to this method, the sample surface 11
2a can be irradiated with the ion beam 110 for sputtering relatively from various directions. Therefore, as shown in FIG. 10, the sputter surface 125 can be made flat, and as a result, the resolution in the depth direction can be improved. However, in this method, the sample surface 112
a is displaced with time around the center of rotation,
When analyzing a specific part in the fine pattern of
There is a problem that analysis is difficult. In addition, it is difficult to arrange a specific portion in the sample surface 112a on the rotation center of the sample stage 111 from the viewpoint of the alignment accuracy of the analyzer.

It is an object of the present invention to provide a surface analysis method and apparatus which can improve the resolution in the depth direction and can easily analyze a specific portion of a sample surface to be analyzed.

[0006]

According to a first aspect of the present invention, there is provided a surface analysis method, comprising: rotating a sample around a rotation center perpendicular to the sample surface; In a surface analysis method of irradiating an ion beam and shaving a sample surface and analyzing the sample in a depth direction, before starting rotation of the sample, an initial position of a specific portion to be analyzed in the sample surface, Determine the position of the rotation center in the sample surface, during or after rotation of the sample, the distance between the initial position of the specific portion and the position of the rotation center, and the sample around the rotation center A position during or after rotation of the specific portion is obtained based on the rotated angle, and the obtained position is irradiated with a primary line for analysis.

According to the surface analysis method of the first aspect, the sample surface is irradiated with an ion beam for sputtering while the sample is rotated around a rotation center perpendicular to the sample surface, thereby shaving the sample surface. Can be irradiated with ion beams for sputtering from relatively various directions. Therefore, the sputter surface can be made flat, and as a result, the resolution in the depth direction can be improved. In addition, in this surface analysis method, before the rotation of the sample is started, an initial position of a specific portion to be analyzed in the surface of the sample and a position of the rotation center in the surface of the sample are obtained, and the rotation of the sample is determined. Or, after rotation, based on the distance between the initial position of the specific portion and the position of the rotation center, and the angle at which the sample is rotated around the rotation center, during or after rotation of the specific portion. Is obtained, and the obtained position is irradiated with a primary line for analysis. Therefore, even when a specific portion in the fine pattern formed on the sample surface is analyzed, the specific portion is tracked and the analysis is easily performed.

According to a second aspect of the present invention, in the surface analysis method of the first aspect, the initial position of the specific portion and the position of the rotation center are stored in the sample for analysis.
It is obtained from the position of the image on the sample surface when the next line is irradiated.

According to the surface analysis method of the second aspect, the initial position of the specific portion and the position of the rotation center can be easily obtained.

According to a third aspect of the present invention, there is provided a surface analysis apparatus, comprising: a sample stage having a surface on which a sample is mounted; a rotation drive system capable of rotating the sample stage around a rotation center perpendicular to the surface; Sputtering means for irradiating the surface of the sample with a sputtering ion beam to shave the sample surface, primary beam irradiating means for irradiating the sample surface with a primary beam for analysis, First detection means for detecting an element on the sample surface based on a secondary line, and second detection means for detecting an image of the sample surface based on a primary line irradiated on the sample surface; Based on the distance between the initial position of the specific portion to be analyzed in the sample surface and the position of the rotation center, and the angle at which the rotation drive system rotates the sample around the rotation center, The rotation of the specified part on the sample surface Obtain the position of during or after rotation, characterized by comprising a control means for performing control to irradiate the primary line of the primary beam irradiation means in this obtained position.

According to the surface analysis apparatus of the third aspect, the surface analysis method of the first or second aspect can be easily implemented. Therefore, the sputter surface can be made flat,
As a result, the resolution in the depth direction can be improved.
In addition, even when a specific portion in the fine pattern formed on the sample surface is analyzed, the specific portion is tracked and the analysis is easily performed.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the surface analysis method and apparatus according to the present invention will be described below in detail.

FIG. 1 shows an AES (Auger electron spectroscopy) analyzer of one embodiment of the surface analyzer of the present invention. This AES analyzer has a surface 1 on which the sample 12 is mounted.
1a, and a sample stage 11 having a rotating shaft 1
, A rotating drive system 7 for rotating about 3, an ion gun 5 as a sputtering means, an electron gun 1 and a deflection electrode 4 as a primary beam irradiation means, and an AE as a first detection means.
S detector 2 and secondary electron detector 6 as second detecting means
A computer 8 as control means for controlling the operation of the entire analyzer; and a CRT (cathode ray tube) 9 for displaying the contents of signals received from the computer 8. The rotating shaft 13 is vertically attached to the center of the lower surface 11b of the sample stage 11, and can be tilted with the sample stage 11 with respect to the vertical direction. The ion gun 5 is for irradiating the surface of the sample 12 with the ion beam 10 for sputtering to cut the sample surface 12a. The electron gun 1
An electron beam 3 is emitted vertically downward as a primary beam for analysis.
The deflection electrode 4 deflects the electron beam 3 emitted from the electron gun 1 so that the sample surface 12a is effectively irradiated with the electron beam 3. The AES detector 2 receives Auger electrons emitted from the sample surface 12a irradiated with the electron beam 3, and detects elements on the sample surface 12a. The secondary electron detector 6 detects an image (secondary electron image) of the sample surface 12a by the electron beam 3. The field of view of the secondary electron detector 6 coincides with the vertical direction, and the secondary electron image is obtained on a horizontal plane. CRT9 is
A signal representing the secondary electron image obtained by the secondary electron detector 6 is received via the computer 8, and the secondary electron image can be displayed on the screen.

Using this AES analyzer, element analysis in the depth direction is performed on one of the Al pads (pattern size 100 μm × 100 μm) 16 on the surface 12 a of the LSI chip 12 shown in FIG. Note that the elemental analysis is actually performed at 50 μm × 5 in the center of the Al pad 16.
This is a region A of 0 μm. As shown in FIG. 3, the Al pad 16 is formed on a silicon oxide film (SiO ₂ ) 15 covering the silicon substrate 14. Al pad 16
A silicon oxide film 17 is formed by CVD (chemical vapor deposition).

The sample (LSI chip) 12 is mounted on a mounting surface 11a of a sample stage 11 as shown in FIG. 1, and is rotated by a rotation drive system 7 around a rotation axis 13, that is, a rotation center perpendicular to the sample surface 12a. Is done. As shown in FIG. 2, when the position of the rotation center in the sample surface 12a is O and a point (for example, the center point) representing the area A is P, the point P is a point O
Draw a circle C with a constant radius (R) around. In addition, as shown in FIG.
The plane has an angle θ (0 ° ≦ θ ≦ 90) with respect to an XY plane (horizontal plane) on which a secondary electron image is obtained by the secondary electron detector 6.
) (The x-axis and the X-axis coincide, and the y-axis and the Y-axis form an angle θ).

The electron beam 3 emitted from the electron gun 1 is applied to a deflection electrode 4
The deflection control is performed as follows.

First, an initial position P ₀ of a point P on the sample surface 12 a and a position of the rotation center O on the sample surface 12 a are obtained.

As shown in FIG. 4, the initial position P ₀ of these points P and the position of the rotation center O are determined by aligning the electron beam 3 from the electron gun 1 with the sample surface 12a in the x-direction. Is obtained as the position of the image (secondary electron image) P ₀ ′, O ′ detected by the secondary electron detector 6 when the light is irradiated.

Here, in a state where the images P ₀ ′ and O ′ are arranged in the x direction, that is, a state where the distance between the images P ₀ ′ and O ′ is maximum, the initial position P ₀ of the point P (rotation angle φ = 0 °). The distance between the images P ₀ ′ and O ′ in this state is
This corresponds to the turning radius R of the point P as it is.

Next, based on the initial position P ₀ of the point P and the position of the rotation center O, the point P during or after the rotation of the sample 12, that is, the position of the area A is obtained.

Assuming that the angle at which the sample 12 is rotated around the rotation center O is φ (φ = ωt, where ω is the angular velocity and t is the elapsed time from the start of rotation), the point P on the xy plane is The position coordinates (x, y) are given assuming that the point O is the origin.
It is represented by the following equation (1).

(X, y) = (Rcosφ, Rsinφ) (1) The trajectory of the point P on the xy plane during or after the rotation is an image P ′ on an XY plane inclined by an angle θ with respect to the xy plane. Is projected as a locus. Point P 'on the XY plane
Is represented by the following equation (2), with the point O 'as the origin.

(X, Y) = (Rcosφ, Rsinφcosθ) (2) Here, XY from which the secondary electron image of the secondary electron detector 6 is obtained
The plane is equivalently composed of a large number of pixels arranged in a matrix such as 512 pixels in the X direction and 512 pixels in the Y direction. If the fixed point (for example, a corner) in the XY plane is set as the origin, it is convenient for controlling the electron beam 3. Therefore, on the XY plane, the origin is moved in parallel to a point where the coordinates of the point O 'are regarded as (X ₀ , Y ₀ ). At this time, the position coordinates of the image P '(X, Y) is expressed as (X, Y) = (X 0 + Rcosφ, Y 0 + Rsinφcosθ) ... (3).

As described above, the position of the point P during or after the rotation is obtained as the position (X, Y) of the image P '.

If the electron beam 3 from the electron gun 1 is deflected so that a secondary electron image of the point P is obtained at the position coordinates (X, Y), the electron beam is moved to the point P (region A). 3 can be irradiated. This means that the position coordinates (x,
This is equivalent to obtaining y) and irradiating the electron beam 3 toward the position coordinates.

The procedure for analyzing the sample surface 12a proceeds as follows in accordance with the flow shown in FIG. 5 as a whole.

(I) First, as shown in FIG. 1, an LSI chip 1 as a sample 12 is mounted on a mounting surface 11a of a sample table 11.
2 is mounted, and the LSI chip 12 is accommodated together with the sample stage 11 in a chamber (not shown) of the AES apparatus (S1). That is, the sample stage 11 is attached to the rotation drive system 7 via the rotation shaft 13. At this time, the sample surface 12a
It is desirable to make an adjustment so that the area A to be analyzed in the inside is as close to the center of rotation as possible. Thereby, the position calculation error for the region A (point P) can be reduced.

(Ii) Next, the rotating shaft 13 is tilted to set the sample surface 12a together with the sample stage 11 in a state of being tilted by an angle θ with respect to the horizontal plane (S2).

(Iii) Next, before the elemental analysis is started, the image O 'of the rotation center O in the sample surface 12a and the point An image P ′ of P is obtained. The operator checks the distance between the images P ₀ ′ and O ′ on the screen of the CRT 9 (S
3). Then, the position of the rotation center O in the sample surface 12a is read as the position (X ₀ , Y ₀ ) of the image O ′. Further, the image P ₀ ', O' state aligned in the x direction, i.e. the image P ₀ ',
With the distance between O 'being maximum, the initial position P of the point P
₀ (rotation angle φ = 0 °), and the image P ₀ ′,
The distance between O 'is read as the turning radius R of the point P (S
4).

(Iv) Next, measurement conditions are set in the computer 8. That is, the values of X ₀ , Y ₀ , R, and θ are input. Further, an angular velocity ω at which the sample 12 is rotated,
One sputter etching time t and the number of measurement cycles (measurement times) n in the depth direction are input (S5).

(V) Next, AES analysis is performed on the sample surface (outermost surface) 12a before sputter etching (S
6). That is, the electron beam 3 emitted by the electron gun 1 is deflected by the deflecting electrode 4, and the element analysis is performed by the AES detector 2 while irradiating the region A in the sample surface 12a with the electron beam 3.

(Vi) Next, the sample 1 is driven by the rotary drive system 7.
The sample surface 12a is irradiated with the ion beam 10 for sputter etching by the ion gun 5 while rotating the sample 2 at a constant angular velocity ω, and the sample surface 12a is shaved for a predetermined time t (S7). In this case, the sample surface 12a can be irradiated with the ion beam 10 for sputtering from various directions relatively, so that the sputtered surface can be flattened. As a result, as described later, the resolution in the depth direction can be improved.

As shown in FIG. 2, the region U to be subjected to sputter etching is set sufficiently wide so as to include a range in which the region A to be analyzed moves. The rotation of the sample 12 is linked to the sputter etching, and the sample 12 is rotated for the time t during which the sputter etching is performed.

(Vii) Next, the computer 8
Based on the above equation (3), the position of the point P after the rotation and the sputter etching is calculated as the position (X, Y) of the image P ′ on the XY plane (S8). Then, a secondary electron image of the point P is obtained at the position coordinates (X, Y),
The electron beam 3 from the electron gun 1 is deflected (S9). As a result, the point P (region A) can be irradiated with the electron beam 3. In this state, AES analysis is performed again (S10).

(Viii) Next, the computer 8
It is determined whether the measurement (AES analysis) has already been performed n times (S11). If the measurement has already been performed n times, the measurement is terminated (S12). If the measurement has not been performed n times, the sample 12 is again rotated at a constant angular velocity ω for a certain time t.
(S7), and the point P after rotation
Is obtained (S8), the electron beam 3 is deflected to the obtained position (S9), and AES analysis is performed (S10). In this way, the measurement cycle of S7 to S10 is repeated until the measurement is performed n times, and the element analysis in the depth direction of the sample 12 is performed.

As described above, even when the area A in the Al pad of the LSI chip 12 is analyzed, the area A can be tracked and the analysis can be easily performed.

FIG. 6 shows the results of the AES profile analysis in the depth direction for the region A (dimensions 50 μm × 50 μm) in the Al pad by the above-described procedure. The measurement elements are Al and O. The measurement conditions are set such that the tilt angle θ of the sample surface 12a is 60 °, the radius of rotation R of the point P is 300 μm, and the angular velocity ω at which the sample 12 is rotated is 120 ° / min. As can be seen from FIG. 6, when the intensity change of oxygen (O) is defined as a range of 16% to 84% of the total intensity change (100%), the resolution in the depth direction (interface resolution) is about 0.1 μm. Thus, the interface resolution was significantly improved as compared with the conventional 0.4 μm (see FIG. 11). The reason for the improvement was that the sputtering surface was flattened by irradiating the sample surface 12a with the ion beam 10 for sputtering from various directions.

In the above measurement procedure, the rotation and sputter etching of the sample and the AES analysis of the sample surface are performed alternately, but the present invention is not limited to this. The position of the rotating point P may be obtained in real time by the computer 8 while rotating and sputter etching the sample, and the AES analysis of the sample surface may be performed in parallel with the rotation and sputter etching of the sample. In this case, the elements (for example, C and O) in the atmosphere in the chamber containing the sample can be prevented from adhering to the sample surface, and the AES
Background noise in the analysis can be suppressed.

FIG. 7 shows another measurement procedure which is a modification of the above-described measurement procedure. In this measurement procedure, the point P (area A) is returned to the initial position based on the position of the point P after the rotation in the above-described measurement procedure, and the area A in this initial position is returned.
In that the analysis is performed by deflecting the electron beam 3.

More specifically, (i) First, an LSI chip 12 as a sample is attached to the mounting surface 11a of the sample stage 11 shown in FIG.
2 is housed together with the sample table 11 in a chamber (not shown) of the AES apparatus (S21). That is, the sample stage 1
1 is attached to the rotation drive system 7 via the rotation shaft 13.

(Ii) Next, the rotating shaft 13 is inclined to set the specimen surface 12a together with the specimen stage 11 in a state inclined by an angle θ with respect to the horizontal plane (S22).

(Iii) Next, while the sample 12 is rotated by the rotation drive system 7 before starting the elemental analysis, the image O 'of the rotation center O in the sample surface 12a and the point An image P ′ of P is obtained. The operator checks the distance between the images P ₀ ′ and O ′ on the screen of the CRT 9 (S 2).
3). Then, the position of the rotation center O in the sample surface 12a is read as the position (X ₀ , Y ₀ ) of the image O ′. Further, the image P ₀ ', O' state aligned in the x direction, i.e. the image P ₀ ',
With the distance between O 'being maximum, the initial position P of the point P
₀ (rotation angle φ = 0 °), the position (X _R , Y _R ) of the image P ₀ ′ in this state is read, and the image P ₀ ′, O ′
The distance between the points P is read as the turning radius R of the point P (S2
4).

(Iv) Next, measurement conditions are set in the computer 8. That is, the values of X ₀ , Y ₀ , X _R , Y _R , R, and θ are input. Further, an angular velocity ω for rotating the sample 12, a single sputter etching time t, and the number of measurement cycles (number of measurements) n in the depth direction are input (S2).
5).

(V) Next, AES analysis is performed on the sample surface (outermost surface) 12a before sputter etching (S2).
6). That is, the electron beam 3 emitted by the electron gun 1 is deflected by the deflecting electrode 4, and the element analysis is performed by the AES detector 2 while irradiating the region A in the sample surface 12a with the electron beam 3.

(Vi) Next, the sample 1 is driven by the rotary drive system 7.
While rotating 2 at a constant angular velocity ω, an ion beam 5 for sputter etching is applied to the sample surface 12a by the ion gun 5 to scrape the sample surface 12a for a fixed time t (S27). In this case, the sample surface 12a
, The sputtering ion beam 10 can be irradiated from various directions relatively, so that the sputtering surface can be flattened. As a result, as described later, the resolution in the depth direction can be improved.

(Vii) Next, the computer 8
Based on the above equation (3), the position of the point P after the rotation and the sputter etching is calculated as the position (X, Y) of the image P ′ on the XY plane (S28). Then, the sample 12 is rotated by the rotation drive system 7 based on the position coordinates (X, Y) of the image P 'of the point P, and the point P is set to the initial position P _0.
(S29). Therefore, the previously determined image P
Position of _{0 '(X R, Y R} ) (S30) from the secondary electron image of the point P in deflects the electron beam 3 so as to obtain the point P
The (area A) can be irradiated with the electron beam 3. In this state, AES analysis is performed again (S31).

(Viii) Next, the computer 8
It is determined whether or not the measurement (AES analysis) has already been performed n times (S32). If the measurement has already been performed n times, the measurement is terminated (S33). If the measurement has not been performed n times, the measurement cycle of S27 to S31 is repeated until the measurement is performed n times, and the element analysis in the depth direction of the sample 12 is performed.

In this manner, analysis can be easily performed by this measurement procedure.

It is to be noted that a translation means is provided which can translate the sample table 11 in a plane along the mounting surface 11a, and the translation means is used based on the position coordinates (X, Y) of the image P '. Move the point P to the position of the rotation center O,
In the position coordinates (X ₀ , Y ₀ ) of the image of the rotation center O, the point P
The electron beam 3 may be deflected so that a secondary electron image is obtained. Also in this case, the electron beam 3 is located at the point P (region A).
Can be irradiated.

In the above-described embodiment, an electron gun is provided as a primary beam source and an electron beam is irradiated as a primary beam for analysis. However, the invention is not limited to this. For example, an ion gun or an X-ray gun may be provided as a primary radiation source, and an ion beam or an X-ray may be irradiated as a primary radiation for analysis.

According to the present invention, by selecting various types of primary rays for analysis, a method and an apparatus for detecting an image of the sample surface by irradiating the primary rays, the sample surface is shaved by sputtering, and the depth of the sample is reduced. The present invention can be widely applied to a surface analysis method and an apparatus for performing analysis in a vertical direction.

[0052]

As is apparent from the above description, in the surface analysis method of the first aspect, the sample surface is irradiated with an ion beam for sputtering while rotating the sample around a rotation center perpendicular to the sample surface. Since the sample surface is shaved, the sample surface can be irradiated with a sputtering ion beam from various directions relatively. Therefore, the sputter surface can be made flat, and as a result, the resolution in the depth direction can be improved. In addition, in this surface analysis method, before the rotation of the sample is started, an initial position of a specific portion to be analyzed in the surface of the sample and a position of the rotation center in the surface of the sample are obtained, and the rotation of the sample is determined. Or, after rotation, based on the distance between the initial position of the specific portion and the position of the rotation center, and the angle at which the sample is rotated around the rotation center, during or after rotation of the specific portion. Is obtained, and the obtained position is irradiated with a primary line for analysis. Therefore, even when analyzing a specific portion in the fine pattern formed on the sample surface, the specific portion can be tracked, and the analysis can be easily performed.

According to a second aspect of the present invention, in the surface analysis method, the initial position of the specific portion and the position of the center of rotation are determined based on the position of the image of the sample surface when the sample is irradiated with a primary line for analysis. Therefore, the initial position of the specific portion and the position of the rotation center can be easily obtained.

According to the surface analysis apparatus of the third aspect, the surface analysis method of the first or second aspect can be easily implemented.
Therefore, the sputter surface can be made flat, and as a result, the resolution in the depth direction can be improved. In addition, even when a specific part in the fine pattern formed on the sample surface is analyzed, the specific part can be tracked and the analysis can be easily performed.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a schematic configuration of an AES analyzer according to an embodiment of the present invention.

FIG. 2 is a diagram showing an LSI chip as a sample to be analyzed.

FIG. 3 is a diagram schematically showing a cross section of the LSI chip.

FIG. 4 is a diagram conceptually showing an xy plane on which a sample surface exists and an XY plane on which a secondary electron image is obtained.

FIG. 5 is a view showing a measurement procedure by the AES analyzer.

FIG. 6 shows an AES of an Al pad portion of the LSI chip.
It is a figure showing an analysis result.

FIG. 7 is a diagram showing another measurement procedure obtained by modifying the above measurement procedure.

FIG. 8 is a diagram showing a sputter surface obtained by sputter etching a sample surface from a certain direction.

FIG. 9 is a diagram showing a mode in which sputter etching is performed while rotating the sample around a rotation center perpendicular to the sample surface.

10 is a diagram showing a sputter surface obtained by sputter etching in the mode of FIG. 9;

FIG. 11 is a diagram showing a result of performing AES analysis in a depth direction of a sample by subjecting a sample surface to sputter etching from a certain direction.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Electron gun 2 AES detector 5 Ion gun for sputter etching 6 Secondary electron beam detector 7 Rotation drive system 8 Computer 9 CRT 11 Sample stand 12 Sample

Claims (3)

(57) [Claims] 1. A surface on which a sample surface is irradiated with an ion beam for sputtering while the sample is being rotated around a rotation center perpendicular to the sample surface to cut the sample surface and analyze the sample in a depth direction. In the analysis method, before the rotation of the sample is started, an initial position of a specific portion to be analyzed in the sample surface and a position of the rotation center on the sample surface are obtained.During or after rotation of the sample, Based on the distance between the initial position of the specific portion and the position of the rotation center, and the angle at which the sample is rotated around the rotation center, determine the position of the specific portion during or after rotation. A surface analysis method characterized by irradiating the determined position with a primary line for analysis. 2. The surface analysis method according to claim 1, wherein the initial position of the specific portion and the position of the rotation center are determined by irradiating the sample with a primary line for analysis. A surface analysis method characterized in that it is determined from the position of the surface. 3. A sample stage having a surface on which a sample is mounted, a rotation drive system capable of rotating the sample stage around a rotation center perpendicular to the surface, and an ion beam for sputtering on the surface of the sample. Sputtering means for irradiating the sample surface to irradiate the sample surface; primary beam irradiating means for irradiating the sample surface with a primary beam for analysis; and First detecting means for detecting an element, second detecting means for detecting an image of the sample surface based on a primary line irradiated on the sample surface, and identification of the sample surface to be analyzed The rotation of the specific portion within the sample surface based on the distance between the initial position of the portion and the position of the rotation center, and the angle at which the rotation drive system rotates the sample around the rotation center. Find the position inside or after rotation, A surface analyzing apparatus comprising: a control unit for performing control to irradiate the determined position with a primary beam of the primary beam irradiating unit.