JP3146219B2 - Method for manufacturing magneto-optical recording medium - Google Patents

Method for manufacturing magneto-optical recording medium

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Publication number
JP3146219B2
JP3146219B2 JP29564492A JP29564492A JP3146219B2 JP 3146219 B2 JP3146219 B2 JP 3146219B2 JP 29564492 A JP29564492 A JP 29564492A JP 29564492 A JP29564492 A JP 29564492A JP 3146219 B2 JP3146219 B2 JP 3146219B2
Authority
JP
Japan
Prior art keywords
film
magneto
optical recording
dielectric
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29564492A
Other languages
Japanese (ja)
Other versions
JPH06150412A (en
Inventor
裕二 高塚
崇志 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Sumitomo Chemical Co Ltd
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Application filed by Sumitomo Metal Mining Co Ltd, Sumitomo Chemical Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP29564492A priority Critical patent/JP3146219B2/en
Publication of JPH06150412A publication Critical patent/JPH06150412A/en
Application granted granted Critical
Publication of JP3146219B2 publication Critical patent/JP3146219B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、レーザ光等の照射によ
り数値、文書、映像、音楽等各種情報の記録、再生、消
去が可能な光磁気ディスク等の光磁気記録媒体に係り、
特に、消去、記録、再生を連続して100万回以上繰返
しても記録・再生特性の劣化が起こり難い光磁気記録媒
体の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-optical recording medium such as a magneto-optical disk capable of recording, reproducing, and erasing various information such as numerical values, documents, images, music, etc. by irradiating a laser beam or the like.
In particular, the present invention relates to a method for manufacturing a magneto-optical recording medium in which the recording / reproducing characteristics are unlikely to be deteriorated even when erasing, recording, and reproducing are repeated one million times or more.

【0002】[0002]

【従来の技術】レーザ光等光ビームを使用して情報の記
録、再生、消去が行える光磁気記録媒体は高密度の情報
記録を可能ならしめ、情報の消去、追記記録等が簡便か
つ迅速に行える等優れた情報処理能力を備えている。
2. Description of the Related Art A magneto-optical recording medium capable of recording, reproducing, and erasing information by using a light beam such as a laser beam enables high-density information recording. It has excellent information processing ability such as being able to do it.

【0003】以下、図面を用いてこの光磁気記録媒体の
構成例を説明すると、図9に示すようにガラス若しくは
プラスチック等から成る透明基板10と、この透明基板
10上に製膜され光磁気効果を増大させるための誘電体
干渉膜20と、この誘電体干渉膜20上に製膜されその
磁化容易軸が膜面に対し垂直な光磁気記録膜30と、こ
の光磁気記録膜30上に製膜され光磁気記録膜30を保
護するための誘電体保護膜40とでその主要部が構成さ
れている。尚、図9中、50はレーザ光を反射させる反
射膜である。
A configuration example of this magneto-optical recording medium will be described below with reference to the drawings. As shown in FIG. 9, a transparent substrate 10 made of glass or plastic, and a magneto-optical effect formed on the transparent substrate 10 are formed. A dielectric interference film 20 for increasing the magnetic field, a magneto-optical recording film 30 formed on the dielectric interference film 20 and having an easy axis of magnetization perpendicular to the film surface, and a magneto-optical recording film 30 formed on the magneto-optical recording film 30. The dielectric protection film 40 for protecting the magneto-optical recording film 30 forms a main part. In FIG. 9, reference numeral 50 denotes a reflection film that reflects laser light.

【0004】そして、この光磁気記録媒体を用いて情報
の記録を行うには、上記光磁気記録媒体に対してレーザ
光等光ビームを照射し光磁気記録膜30の一部が熱せら
れ磁化が消失するキュリー温度近傍になったところでバ
イアス磁界を作用させてその部位の磁化を反転させる一
方、記録情報を消去するには記録時とは逆向きのバイア
ス磁界を作用させその部位の磁化を反転させてこれを行
うものである。
In order to record information using this magneto-optical recording medium, the magneto-optical recording medium is irradiated with a light beam such as a laser beam to partially heat the magneto-optical recording film 30 so that the magnetization is reduced. When the temperature approaches the disappearing Curie temperature, a bias magnetic field is applied to invert the magnetization of the site.On the other hand, to erase the recorded information, a bias magnetic field in the opposite direction to that during recording is applied to reverse the magnetization of the site. To do this.

【0005】[0005]

【発明が解決しようとする課題】ところで、従来の光磁
気記録媒体においては、消去、記録、再生を連続して1
00万回程度繰返した場合、その熱感度と磁界感度が経
時的に変化し易く、これ等感度の変化に起因して記録・
再生特性の劣化が起こる欠点があり、初期に記録された
信号に較べて新たに記録される信号のCNR(キャリア
・ノイズ・レシオ)が低下する問題点があった。
By the way, in a conventional magneto-optical recording medium, erasing, recording, and reproducing are continuously performed for one time.
When it is repeated about one million times, the thermal sensitivity and the magnetic field sensitivity are liable to change with time.
There is a disadvantage that the reproduction characteristics are deteriorated, and there is a problem that the CNR (carrier noise ratio) of a newly recorded signal is lower than that of an initially recorded signal.

【0006】特に、光磁気記録媒体においては頻繁に記
録・消去がなされる領域とあまり書替えがなされない領
域とが存在するため、上記感度の経時変化に伴い同一記
録媒体内に記録・再生特性が相違する複数の記録領域が
並存してしまい記録された信号のCNRがその領域によ
ってばらついてしまう問題点があった。
[0006] In particular, in a magneto-optical recording medium, there are an area where recording and erasing are performed frequently and an area where rewriting is not so often performed. There is a problem that a plurality of different recording areas coexist and the CNR of a recorded signal varies depending on the area.

【0007】本発明はこのような問題点に着目してなさ
れたもので、その課題とするところは、消去、記録、再
生を連続して100万回以上繰返しても記録・再生特性
の劣化が起こり難い光磁気記録媒体の製造方法を提供す
ることにある。
The present invention has been made in view of such a problem, and it is an object of the present invention that the deterioration of the recording / reproducing characteristics is not caused even when erasing, recording, and reproducing are repeated more than 1,000,000 times continuously. An object of the present invention is to provide a method of manufacturing a magneto-optical recording medium which is unlikely to occur.

【0008】[0008]

【課題を解決するための手段】この様な技術的背景の
下、本発明者等は上記熱感度と磁界感度が経時的に変化
する原因について鋭意分析したところ、消去、記録又は
再生時におけるレーザ光等光ビームの照射により光磁気
記録媒体の光磁気記録膜が加熱され、その温度上昇(ア
ニール)に起因してそのアモルファス構造が変化しかつ
この構造変化に伴う磁気特性、特に保磁力の減少やこの
保磁力と略比例関係にある磁壁抗磁力の減少にその原因
があるものと考えた。
Under the above technical background, the present inventors have conducted intensive analysis on the cause of the temporal change in the thermal sensitivity and the magnetic field sensitivity. Irradiation of a light beam such as light heats the magneto-optical recording film of the magneto-optical recording medium, and the amorphous structure changes due to the temperature rise (annealing), and the magnetic characteristics, especially the coercive force, decrease with this structural change. It is thought that the cause is the decrease in the domain wall coercive force, which is substantially proportional to the coercive force.

【0009】そこで、本発明者等は、そのビームスポッ
ト径が1トラック巾に相当するレーザビームを用い1ト
ラックについて消去・記録・再生を連続して100万回
繰返し(以下、消去・記録・再生を連続して繰返すテス
トをE/W/Rサイクルテストと呼ぶ)その熱感度と磁
界感度が変化した光磁気記録媒体を求めると共に、この
光磁気記録媒体の600トラック(約1mmの巾)につ
いて更に1万回のE/W/Rサイクルテストを行い、か
つ、そのテスト部位のカー回転角をレーザスポット径
0.1mmのカー回転角測定装置により測定したとこ
ろ、予期した通りその保磁力が減少していることを確認
できた。
Therefore, the present inventors have repeatedly performed erasure, recording, and reproduction for one track one million times continuously using a laser beam whose beam spot diameter corresponds to one track width (hereinafter referred to as erasure, recording, and reproduction). (A test in which E is continuously repeated is referred to as an E / W / R cycle test.) A magneto-optical recording medium whose thermal sensitivity and magnetic field sensitivity have changed is determined, and 600 tracks (about 1 mm width) of this magneto-optical recording medium are further determined. When the E / W / R cycle test was performed 10,000 times, and the Kerr rotation angle of the test portion was measured by a Kerr rotation angle measuring device having a laser spot diameter of 0.1 mm, the coercive force decreased as expected. I was able to confirm that.

【0010】尚、上記温度上昇(アニール)に伴う磁気
特性の劣化を、以下、アニール劣化と称する。
[0010] The deterioration of the magnetic characteristics due to the temperature rise (annealing) is hereinafter referred to as annealing deterioration.

【0011】そして、上記保磁力の減少は光磁気記録媒
体の熱感度と記録磁区の再生安定性に悪影響を与え、上
記磁壁抗磁力の減少は再生安定性を悪化させると共に磁
界感度を変化させると考えられる。
The decrease in the coercive force adversely affects the thermal sensitivity of the magneto-optical recording medium and the reproduction stability of the recording magnetic domain, and the decrease in the domain wall coercive force deteriorates the reproduction stability and changes the magnetic field sensitivity. Conceivable.

【0012】この様な技術的見地に基づき本発明者等は
アニール劣化を起こし難い光磁気記録膜について詳細な
検討を行ったところ、上記光磁気記録膜を構成する希土
類−遷移金属合金膜をスパッタリング製膜する際、その
基板温度を80℃以上に加熱することによりアニール劣
化を起こし難い光磁気記録膜が求められることを見出し
た。これは、光磁気記録膜の製膜温度を80℃以上に上
げることにより製膜される光磁気記録膜の密度が高くな
り、その分、光磁気記録膜の構造が安定してE/W/R
サイクルによる原子の移動が起こり難くなるためと考え
られる。
On the basis of such technical viewpoints, the present inventors conducted detailed studies on a magneto-optical recording film which is unlikely to undergo annealing deterioration, and found that the rare earth-transition metal alloy film constituting the magneto-optical recording film was sputtered. It has been found that when forming a film, a magneto-optical recording film that does not easily undergo annealing deterioration by heating the substrate temperature to 80 ° C. or higher is required. This is because increasing the film forming temperature of the magneto-optical recording film to 80 ° C. or higher increases the density of the formed magneto-optical recording film, and accordingly, the structure of the magneto-optical recording film is stabilized and E / W / R
It is considered that the movement of atoms due to the cycle becomes difficult to occur.

【0013】この様に光磁気記録膜の製膜温度を80℃
以上に上げることによりアニール劣化が起こり難い光磁
気記録膜を得られたが、その反面、上記光磁気記録膜を
製膜する際の基板温度を高くするにつれて製膜時におけ
る光磁気記録膜の保磁力が低下し、基板温度を80℃以
上に設定すると室温で製膜した場合に較べてその保磁力
が1kOeから数kOe程度減少してしまい、この結
果、記録磁区が消え易くなりその記録磁区の再生安定性
が経時的に低下してしまう弊害を有することも判明し
た。
As described above, the film forming temperature of the magneto-optical recording film is set to 80 ° C.
By raising the above, a magneto-optical recording film was obtained in which annealing degradation hardly occurred. On the other hand, as the substrate temperature when forming the magneto-optical recording film was increased, the magneto-optical recording film was maintained during the film formation. When the magnetic force decreases and the substrate temperature is set to 80 ° C. or higher, the coercive force decreases from 1 kOe to several kOe as compared with the case where the film is formed at room temperature. As a result, the recording magnetic domain is easily erased and the recording magnetic domain becomes It has also been found that there is an adverse effect that the reproduction stability decreases with time.

【0014】尚、この保磁力の低下は製膜された光磁気
記録膜の組成分析から酸化等の化学的変化でないことが
確認されている。また、この光磁気記録膜における異方
性磁界の測定からその異方性磁界が減少していることも
確認されている。そして、これ等の分析から、光磁気記
録膜の構造的又は応力等の力学的な原因で上記保磁力が
減少したためと考えられる。
It has been confirmed from a composition analysis of the formed magneto-optical recording film that this decrease in coercive force is not a chemical change such as oxidation. In addition, it has been confirmed from the measurement of the anisotropic magnetic field in the magneto-optical recording film that the anisotropic magnetic field has been reduced. From these analyses, it is considered that the coercive force was reduced due to mechanical causes such as structural or stress of the magneto-optical recording film.

【0015】そこで、本発明者等は上記光磁気記録膜の
製膜温度を80℃以上に加熱して製膜する際、製膜され
る光磁気記録膜とこれに隣接する誘電体干渉膜及び誘電
体保護膜との間に熱膨張率の差異に伴う応力を積極的に
生じさせることにより上記光磁気記録膜の保磁力の減少
を防止できることを見出して本発明を完成するに至った
ものである。
Therefore, when heating the film forming temperature of the above-mentioned magneto-optical recording film to 80 ° C. or more, the present inventors, when forming the magneto-optical recording film and the dielectric interference film adjacent thereto, The inventors have found that a decrease in the coercive force of the magneto-optical recording film can be prevented by positively generating a stress due to a difference in coefficient of thermal expansion between the dielectric protective film and the present invention, and have completed the present invention. is there.

【0016】すなわち、請求項1に係る発明は、誘電体
干渉膜と、この誘電体干渉膜上に製膜されその磁化容易
軸が膜面に対し垂直な希土類−遷移金属合金を主成分と
する光磁気記録膜と、この光磁気記録膜上に製膜された
誘電体保護膜を基板上に備える光磁気記録媒体の製造方
法を前提とし、上記誘電体干渉膜よりその熱膨張率が高
い材料にて上記基板を構成し、かつ、この基板上に誘電
体干渉膜をスパッタリング法により製膜した後、基板を
80℃以上に加熱しこの温度条件下において上記誘電体
干渉膜上に光磁気記録膜と誘電体保護膜をスパッタリン
グ法により順次製膜することを特徴とするものである。
That is, according to the first aspect of the present invention, a dielectric interference film and a rare earth-transition metal alloy formed on the dielectric interference film and having an easy axis of magnetization perpendicular to the film surface are main components. Assuming a method for manufacturing a magneto-optical recording medium and a magneto-optical recording medium having a dielectric protective film formed on the magneto-optical recording film on a substrate, a material having a higher coefficient of thermal expansion than the dielectric interference film After forming the dielectric interference film on the substrate by the sputtering method, the substrate is heated to 80 ° C. or more, and magneto-optical recording is performed on the dielectric interference film under the temperature conditions. A film and a dielectric protection film are sequentially formed by a sputtering method.

【0017】この請求項1に係る発明において上記誘電
体干渉膜及び誘電体保護膜は、透明で、かつ、光磁気記
録膜を酸化等の劣化から保護する材料が適用され、例え
ば、SiNx、AlN、SiO2、SiO、Ta25
AlO3、SiAlN、及びSiAlON等の誘電体材
料が挙げられる。
In the invention according to the first aspect, the dielectric interference film and the dielectric protection film are made of a material which is transparent and protects the magneto-optical recording film from deterioration such as oxidation. For example, SiNx, AlN , SiO 2 , SiO, Ta 2 O 5 ,
Dielectric materials such as AlO 3 , SiAlN, and SiAlON are exemplified.

【0018】一方、上記光磁気記録材料は、従来同様、
ガドリニウム(Gd)、テルビウム(Tb)、ディスプ
ロシウム(Dy)等の希土類元素と、鉄(Fe)、コバ
ルト(Co)等の遷移金属元素の非晶質合金が適用さ
れ、例えばGdTbFe、TbDyFe、TbFeC
o、DyFeCo等の3元系合金や、GdTbFeC
o,TbDyFeCo、GdDyFeCo等の4元系合
金等が挙げられる。
On the other hand, the above-mentioned magneto-optical recording material is, as in the prior art,
An amorphous alloy of a rare earth element such as gadolinium (Gd), terbium (Tb) or dysprosium (Dy) and a transition metal element such as iron (Fe) or cobalt (Co) is applied. For example, GdTbFe, TbDyFe, TbFeC
o, ternary alloys such as DyFeCo, GdTbFeC
quaternary alloys such as o, TbDyFeCo and GdDyFeCo.

【0019】そして、請求項1に係る発明においては基
板上に誘電体干渉膜を製膜した後に上記基板を80℃以
上に加熱しており、上記誘電体干渉膜の製膜時には基板
を加熱していないため、ポリカーボネイト基板等上記誘
電体干渉膜よりその熱膨張率が高い基板を適用してもこ
の基板とこの上に製膜される誘電体干渉膜との密着力は
弱くなりこれ等間に生ずる応力も小さな値になってい
る。
In the invention according to claim 1, the substrate is heated to 80 ° C. or higher after forming a dielectric interference film on the substrate, and the substrate is heated at the time of forming the dielectric interference film. Therefore, even if a substrate having a higher coefficient of thermal expansion than the above-mentioned dielectric interference film such as a polycarbonate substrate is applied, the adhesion between the substrate and the dielectric interference film formed thereon becomes weaker, and The resulting stress also has a small value.

【0020】また、上記誘電体干渉膜を製膜した後、基
板を80℃以上に加熱しこの温度条件下において誘電体
干渉膜上に光磁気記録膜と誘電体保護膜とを順次製膜し
ているため光磁気記録膜のアニール劣化を防止すること
が可能となる。また、光磁気記録膜を構成し希土類−遷
移金属合金を主成分とする上記光磁気記録材料の熱膨張
率は誘電体干渉膜や誘電体保護膜を構成する誘電体材料
の熱膨張率に較べて高く、上記誘電体干渉膜と光磁気記
録膜との間及び光磁気記録膜と誘電体保護膜との間には
熱膨張率の差異に伴う応力(膜ストレス)が発生してい
るため、上記光磁気記録膜を製膜する際の基板温度が8
0℃以上に設定されているにも拘らず上記応力の作用に
より光磁気記録膜の保磁力の減少を防止する(保磁力を
1kOe程度以上増加させることが可能となる)ことも
可能となる。尚、この発明においては、上記誘電体干渉
膜と誘電体保護膜の製膜温度が相違し、この製膜温度の
差で生ずる膜密度の差、すなわち平均原子間距離の差の
ため誘電体干渉膜と光磁気記録膜との間に作用する応力
と光磁気記録膜と誘電体保護膜との間に作用する応力と
は同一でないと考えられるが、上記膜密度の差が光磁気
記録膜の保磁力増大を図る上において支障になることは
なかった。
After forming the dielectric interference film, the substrate is heated to 80 ° C. or higher, and a magneto-optical recording film and a dielectric protection film are sequentially formed on the dielectric interference film under the temperature condition. Therefore, it is possible to prevent annealing deterioration of the magneto-optical recording film. The coefficient of thermal expansion of the magneto-optical recording material that forms the magneto-optical recording film and contains a rare earth-transition metal alloy as a main component is higher than that of the dielectric material that forms the dielectric interference film and the dielectric protection film. Since a stress (film stress) is generated between the dielectric interference film and the magneto-optical recording film and between the magneto-optical recording film and the dielectric protective film due to a difference in coefficient of thermal expansion, The substrate temperature at which the magneto-optical recording film is formed is 8
The coercive force of the magneto-optical recording film is prevented from decreasing due to the action of the stress despite the temperature being set to 0 ° C. or higher (the coercive force is reduced).
(It becomes possible to increase about 1 kOe or more) . In the present invention, the film forming temperatures of the dielectric interference film and the dielectric protective film are different, and the difference in film density caused by the difference in film forming temperature, that is, the difference in the average interatomic distance, causes the dielectric interference. It is considered that the stress acting between the film and the magneto-optical recording film is not the same as the stress acting between the magneto-optical recording film and the dielectric protective film. There was no problem in increasing the coercive force.

【0021】また、上記光磁気記録膜の製膜温度を80
℃以上の条件で行い、かつ、誘電体保護膜については室
温程度の温度条件でスパッタリング製膜したところ光磁
気記録膜における保磁力の減少を防止できないことが確
認された。これは、室温程度の温度条件で上記誘電体保
護膜を光磁気記録膜上にスパッタリング製膜したため、
誘電体保護膜と光磁気記録膜との密着力が弱くなり誘電
体保護膜の内部応力が光磁気記録膜に十分伝わっていな
いためと考えられる。そして、このような条件で製造さ
れた光磁気記録媒体はその光磁気記録膜の製膜温度が8
0℃以上に設定されているためアニール劣化の防止が図
れ、消去、記録、再生を連続して100万回以上繰返し
ても記録・再生特性の劣化は起こり難いが、光磁気記録
膜における保磁力減少の防止が図れないため、記録情報
の再生を連続して100万回程度繰返した場合その再生
信号の経時劣化を引起こすものであった。従って、この
発明においては上記誘電体干渉膜と光磁気記録膜との間
及び光磁気記録膜と誘電体保護膜との間に内部応力が発
生する温度条件でこれ等各被膜をスパッタリング法によ
り順次製膜させることを要する。
Further, the film formation temperature of the magneto-optical recording film 80
It was confirmed that the reduction of the coercive force in the magneto-optical recording film could not be prevented when the film was formed at a temperature of about ℃ or more and the dielectric protective film was formed by sputtering at a temperature of about room temperature. This is because the dielectric protective film was formed by sputtering on the magneto-optical recording film under a temperature condition of about room temperature.
This is probably because the adhesion between the dielectric protective film and the magneto-optical recording film was weakened and the internal stress of the dielectric protective film was not sufficiently transmitted to the magneto-optical recording film. The magneto-optical recording medium manufactured under such conditions has a film forming temperature of 8 for the magneto-optical recording film.
Since the temperature is set to 0 ° C. or higher, it is possible to prevent annealing deterioration. Even if erasing, recording, and reproducing are repeated more than 1,000,000 times, the recording / reproducing characteristics are hardly deteriorated. Since the decrease cannot be prevented, when the reproduction of the recorded information is repeated about 1 million times continuously, the reproduced signal is deteriorated with time. Therefore, in the present invention, each of these films is successively formed by a sputtering method under a temperature condition at which an internal stress occurs between the dielectric interference film and the magneto-optical recording film and between the magneto-optical recording film and the dielectric protective film. It is necessary to form a film.

【0022】ここで、本発明においては上記基板として
誘電体干渉膜よりその熱膨張率が高い材料を適用してい
るため、上記基板を80℃以上に加熱しこの温度条件で
誘電体干渉膜を基板上にスパッタリング製膜した場合、
光磁気記録膜の保磁力を増大させる作用とは逆向きの内
部応力が上記基板と誘電体干渉膜との間に発生してしま
い光磁気記録膜の保磁力増大が図れなくなることがあ
る。従って、本発明においては上記誘電体干渉膜を製膜
した後に基板を80℃以上に加熱することを要する。
In the present invention, the substrate is
A material with a higher coefficient of thermal expansion than the dielectric interference film is applied.
Because, when the sputtering film forming a dielectric interference film on the substrate at this temperature condition heated above 80 ° C. the substrate,
An internal stress opposite to the effect of increasing the coercive force of the magneto-optical recording film may be generated between the substrate and the dielectric interference film, making it impossible to increase the coercive force of the magneto-optical recording film. Therefore, in the present invention, the above dielectric interference film is formed.
After that, it is necessary to heat the substrate to 80 ° C. or higher.

【0023】この様に請求項1に係る発明により光磁気
記録膜のアニール劣化を防止できると共に光磁気記録膜
の保磁力の減少も有効に防止することが可能となる。
As described above, according to the first aspect of the present invention, it is possible to prevent the annealing deterioration of the magneto-optical recording film and effectively prevent the coercive force of the magneto-optical recording film from decreasing.

【0024】尚、上記光磁気記録膜におけるアニール劣
化を防止するためには光磁気記録膜の製膜温度を80℃
以上に設定すれば十分であり、従って、上記誘電体保護
膜の製膜温度については80℃以上であれば光磁気記録
膜の製膜温度と同一に設定する必要はない。
In order to prevent the magneto-optical recording film from being degraded by annealing, the film forming temperature of the magneto-optical recording film is set to 80 ° C.
The above setting is sufficient. Therefore, if the film forming temperature of the dielectric protective film is 80 ° C. or more, it is not necessary to set the same as the film forming temperature of the magneto-optical recording film.

【0025】また、上記アニール劣化を防止するための
製膜温度の上限は適用される基板材料の種類によって異
なり、例えば、ポリカーボネイト基板についてはガラス
転移温度(約120℃)以上になると基板が変形する恐
れがあるため110℃程度までが好ましい。
The upper limit of the film forming temperature for preventing the above-mentioned annealing deterioration depends on the type of the substrate material to be applied. For example, in the case of a polycarbonate substrate, the substrate is deformed when the temperature exceeds the glass transition temperature (about 120 ° C.). It is preferable that the temperature be up to about 110 ° C. because of the fear.

【0026】ここで、請求項1に係る発明において光磁
気記録媒体の基板に適用できる材料としては、従来同
様、ポリカーボネト、エポキシ樹脂、ポリオレフィン
系樹脂等が挙げられる。
[0026] Here, as a material that can be applied to the substrate of the magneto-optical recording medium in the invention according to claim 1, as is conventional polycarbonate wells, epoxy resins, polyolefin resins, and the like.

【0027】また、光磁気記録膜としては耐環境性向上
のため、4原子%以下程度のCrやTi等を添加する場
合もある。また、光磁気記録膜の光ビーム照射側とは反
対側の誘電体保護膜上にAl、Au、Cu等の金属とこ
れ等金属とCrやTi等との合金膜で構成される実効的
にカー回転角を大きくする反射膜を設けてもよい。
The magneto-optical recording film may contain about 4 atomic% or less of Cr, Ti, or the like in order to improve environmental resistance. Further, on the dielectric protective film on the opposite side of the light beam irradiation side of the magneto-optical recording film, there is effectively formed a metal such as Al, Au, Cu or the like and an alloy film of these metals and Cr, Ti or the like. A reflective film for increasing the car rotation angle may be provided.

【0028】尚、この反射膜を製膜する際の基板温度に
ついては80℃以上に設定することは要しない。
It is not necessary to set the substrate temperature at 80 ° C. or higher when forming this reflective film.

【0029】また、上記基板についてはトラッキングを
容易にするための案内溝や信号の読取りに利用されるピ
ット(プレフォーマット信号ピット)、及び、ROM領
域等を予め設けてもよい。
The substrate may be provided with guide grooves for facilitating tracking, pits used for reading signals (preformat signal pits), a ROM area, and the like.

【0030】[0030]

【作用】請求項1に係る発明によれば、誘電体干渉膜よ
りその熱膨張率が高い材料にて基板を構成し、かつ、こ
の基板上に誘電体干渉膜をスパッタリング法により製膜
した後、基板を80℃以上に加熱しこの温度条件下にお
いて上記誘電体干渉膜上に光磁気記録膜と誘電体保護膜
をスパッタリング法により順次製膜している。
According to the first aspect of the present invention, after forming the substrate with a material having a higher coefficient of thermal expansion than the dielectric interference film, and forming the dielectric interference film on the substrate by sputtering. Then, the substrate is heated to 80 ° C. or more, and under this temperature condition, a magneto-optical recording film and a dielectric protective film are sequentially formed on the dielectric interference film by a sputtering method.

【0031】そして、この発明においては基板上に誘電
体干渉膜を製膜した後に上記基板を80℃以上に加熱し
ており、上記誘電体干渉膜の製膜時には基板を加熱して
いないため、ポリカーボネイト基板等上記誘電体干渉膜
よりその熱膨張率が高い基板を適用してもこの基板とこ
の上に製膜される誘電体干渉膜との密着力は弱くなりこ
れ等間に生ずる応力も小さな値になっている。
In the present invention, the substrate is heated to 80 ° C. or higher after forming the dielectric interference film on the substrate, and the substrate is not heated at the time of forming the dielectric interference film. Even if a substrate having a higher coefficient of thermal expansion than the above-mentioned dielectric interference film such as a polycarbonate substrate is applied, the adhesion between the substrate and the dielectric interference film formed thereon is weakened, and the stress generated therebetween is small. Value.

【0032】また、上記誘電体干渉膜を製膜した後、基
板を80℃以上に加熱しこの温度条件下において誘電体
干渉膜上に光磁気記録膜と誘電体保護膜とを順次製膜し
ている。従って、光磁気記録膜のアニール劣化を防止す
ることが可能となり、また、光磁気記録膜を構成し希土
類−遷移金属合金を主成分とする上記光磁気記録材料の
熱膨張率は誘電体干渉膜や誘電体保護膜を構成する誘電
体材料の熱膨張率に較べて高く、上記誘電体干渉膜と光
磁気記録膜との間及び光磁気記録膜と誘電体保護膜との
間には熱膨張率の差異に伴う応力が発生しているため、
上記光磁気記録膜を製膜する際の基板温度が80℃以上
に設定されているにも拘らず上記応力の作用により光磁
気記録膜の保磁力の減少を防止することも可能となる。
After forming the dielectric interference film, the substrate is heated to 80 ° C. or higher, and a magneto-optical recording film and a dielectric protection film are sequentially formed on the dielectric interference film under this temperature condition. ing. Therefore, it is possible to prevent the magneto-optical recording film from being annealed and deteriorated. Further, the coefficient of thermal expansion of the magneto-optical recording material constituting the magneto-optical recording film and containing a rare earth-transition metal alloy as a main component is a dielectric interference film. And the thermal expansion coefficient of the dielectric material constituting the dielectric protective film is higher than that between the dielectric interference film and the magneto-optical recording film and between the magneto-optical recording film and the dielectric protective film. Due to the stress caused by the difference in the rate,
Even though the substrate temperature at which the magneto-optical recording film is formed is set to 80 ° C. or higher, it is possible to prevent a decrease in the coercive force of the magneto-optical recording film by the action of the stress.

【0033】[0033]

【実施例】以下、本発明の実施例について図面を参照し
て詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0034】[実施例1] 図1に示すようにポリカーボネト製透明基板11上に
35〜40℃条件下においてスパッタリング法により膜
厚1200Åの非晶質窒化硅素(SiNx)の誘電体干
渉膜21を製膜し、次いで、この誘電体干渉膜21が製
膜された透明基板11を抵抗加熱法により90℃に加熱
した後、この温度条件下において上記誘電体干渉膜21
上にTb19.5Fe71Co9.5から成る膜厚200Åの光
磁気記録膜31と、非晶質窒化硅素(SiNx)から成
る膜厚300Åの誘電体保護膜41と、Al97Ti3
ら成る膜厚500Åの反射膜51を連続的にスパッタリ
ング法により製膜し、かつ、この反射膜51上に紫外線
硬化型樹脂から成るオーバーコート層61を設けて光磁
気記録媒体を製造した。
[0034] [Example 1] dielectric interference film of silicon amorphous nitride film thickness 1200 Å (SiNx) by a sputtering method at 35-40 ° C. under conditions on polycarbonate wells made of transparent substrate 11 as shown in FIG. 1 After the transparent substrate 11 on which the dielectric interference film 21 is formed is heated to 90 ° C. by a resistance heating method, the dielectric interference film 21 is formed under this temperature condition.
A magneto-optical recording film 31 made of Tb 19.5 Fe 71 Co 9.5 and having a thickness of 200 °, a dielectric protection film 41 made of amorphous silicon nitride (SiNx) having a thickness of 300 °, and a film made of Al 97 Ti 3 A 500 ° reflective film 51 was continuously formed by a sputtering method, and an overcoat layer 61 made of an ultraviolet curable resin was provided on the reflective film 51 to manufacture a magneto-optical recording medium.

【0035】尚、製造されたこの光磁気記録媒体につい
て図4に示すようにその磁化と外部磁場の関係を示した
磁化曲線(M−Hループ)を求めたところ、この光磁気
記録膜31の保磁力は4.5kOe程度の値を示しその
ヒステリシスループの角型性が良好であることが確認で
きた。
As shown in FIG. 4, a magnetization curve (MH loop) indicating the relationship between the magnetization and the external magnetic field of the magneto-optical recording medium was determined. The coercive force showed a value of about 4.5 kOe, confirming that the squareness of the hysteresis loop was good.

【0036】この光磁気記録媒体の性能を確認するた
め、ナカミチ製光磁気記録媒体検査装置(商品名:OM
S2000)を用いて100万回のE/W/Rサイクル
テストを行いその熱感度と磁界感度を測定した。
In order to confirm the performance of this magneto-optical recording medium, a Nakamichi magneto-optical recording medium inspection apparatus (trade name: OM)
1 million E / W / R cycle tests were performed using the same method (S2000) to measure the thermal sensitivity and the magnetic field sensitivity.

【0037】尚、E/W/Rサイクルテストの条件は以
下の通りである。
The conditions of the E / W / R cycle test are as follows.

【0038】すなわち、記録媒体の回転数は1800r
pm、記録媒体上の測定位置は半径30mmの部位と
し、かつ、ERASEパワー(消去パワー):10m
W、WRITEパワー(記録パワー):6mW、REA
Dパワー(再生パワー):2mWの照射条件で行った。
That is, the rotation speed of the recording medium is 1800 r.
pm, the measurement position on the recording medium is a part having a radius of 30 mm, and the ERASE power (erase power): 10 m
W, WRITE power (recording power): 6 mW, REA
D power (reproducing power): Irradiation conditions of 2 mW were used.

【0039】そして、熱感度の変化を図2に、磁界感度
の変化を図3に示す。
FIG. 2 shows the change in the thermal sensitivity, and FIG. 3 shows the change in the magnetic field sensitivity.

【0040】図2及び図3の結果から、実施例に係る光
磁気記録媒体においては消去、記録、再生を100万回
繰返しても記録・再生特性の劣化が起こらず、かつ、初
期に記録された信号(図中□で示す)と100万回繰返
した後に記録された信号(図中△で示す)のCNRの差
異はほとんどないことが確認された。
From the results shown in FIGS. 2 and 3, the magneto-optical recording medium according to the embodiment does not deteriorate in recording / reproducing characteristics even after repeating erasing, recording, and reproducing 1,000,000 times, and records data in the initial stage. It was confirmed that there was almost no difference in CNR between the signal (indicated by □ in the figure) and the signal recorded after repeating 1 million times (indicated by △ in the figure).

【0041】一方、初期に記録された信号情報について
READパワー(再生パワー):2mWの条件で連続し
て100万回繰返し再生してもそのCNRの低下は0.
3dB程度に過ぎなかった。
On the other hand, even if signal information recorded at the beginning is repeatedly reproduced one million times continuously under the condition of READ power (reproduction power): 2 mW, the CNR is reduced by 0.1.
It was only about 3 dB.

【0042】[比較例1] 35〜40℃条件で上記ポリカーボネイト製透明基板1
1上に誘電体干渉膜21、光磁気記録膜31、誘電体保
護膜41、反射膜51を順次連続的に製膜した点を除き
実施例1と略同一の条件で図1に示す光磁気記録媒体を
製造した。
Comparative Example 1 The above-mentioned transparent substrate 1 made of polycarbonate at 35 to 40 ° C.
1 except that a dielectric interference film 21, a magneto-optical recording film 31, a dielectric protection film 41, and a reflection film 51 were successively formed in this order on FIG. A recording medium was manufactured.

【0043】尚、製造されたこの光磁気記録媒体につい
て図7に示すようにその磁化と外部磁場の関係を示した
磁化曲線(M−Hループ)を求めたところ、この光磁気
記録膜31の保磁力は5.4kOe程度でそのヒステリ
シスループの角型性が悪いことが確認できた。
As shown in FIG. 7, a magnetization curve (MH loop) indicating the relationship between the magnetization and the external magnetic field of the magneto-optical recording medium was determined. The coercive force was about 5.4 kOe, and it was confirmed that the squareness of the hysteresis loop was poor.

【0044】そして、実施例に係る光磁気記録媒体との
性能を比較するため実施例1と同様の条件で100万回
のE/W/Rサイクルテストを行いその熱感度と磁界感
度を測定した。尚、図5に熱感度の変化を、図6に磁界
感度の変化を示す。
Then, in order to compare the performance with the magneto-optical recording medium according to the embodiment, 1,000,000 E / W / R cycle tests were performed under the same conditions as in the embodiment 1, and the thermal sensitivity and the magnetic field sensitivity were measured. . FIG. 5 shows a change in thermal sensitivity, and FIG. 6 shows a change in magnetic field sensitivity.

【0045】これ等図の結果から、比較例1に係る光磁
気記録媒体においては、消去、記録、再生を100万回
繰返したことにより熱感度が初期状態より高感度とな
り、かつ、磁界感度も変化してしまい記録・再生特性の
劣化が起こっており、また、初期に記録された信号(図
中□で示す)と100万回繰返した後に記録された信号
(図中△で示す)のCNRも大きく相違することが確認
された。
From the results shown in these figures, in the magneto-optical recording medium according to Comparative Example 1, the thermal sensitivity was higher than the initial state by repeating erasing, recording, and reproducing 1 million times, and the magnetic field sensitivity was also higher. The CNR of the signal recorded at the beginning (shown by □ in the figure) and the signal recorded after repeating 1 million times (shown by △ in the figure) Was also found to be significantly different.

【0046】また、初期に記録された信号情報について
READパワー(再生パワー):2mWの条件で連続し
て100万回繰返し再生したところ、初期に較べて10
0万回後の再生信号のCNRは0.8dB低下してい
た。
Further, the signal information recorded at the beginning was repeatedly reproduced 1 million times continuously under the condition of READ power (reproduction power): 2 mW.
The CNR of the reproduced signal after 0.8000 times was reduced by 0.8 dB.

【0047】[比較例2] 光磁気記録膜31の製膜温度条件についてのみポリカー
ボネイト製透明基板11を90℃に加熱し、他の誘電体
干渉膜21、誘電体保護膜41、反射膜51については
35〜40℃の条件で順次製膜した点を除き実施例1と
略同一の条件で図1に示す光磁気記録媒体を製造した。
Comparative Example 2 The polycarbonate transparent substrate 11 was heated to 90 ° C. only under the film forming temperature conditions of the magneto-optical recording film 31, and the other dielectric interference film 21, dielectric protection film 41 and reflection film 51 were formed. The magneto-optical recording medium shown in FIG. 1 was manufactured under substantially the same conditions as in Example 1 except that films were sequentially formed at 35 to 40 ° C.

【0048】尚、製造されたこの光磁気記録媒体につい
て図8に示すようにその磁化と外部磁場の関係を示した
磁化曲線(M−Hループ)を求めたところ、この光磁気
記録膜31の保磁力は3.3kOe程度の値を示しその
ヒステリシスループの角型性が良好であることが確認で
きた。
As shown in FIG. 8, a magnetization curve (MH loop) indicating the relationship between the magnetization and the external magnetic field of the manufactured magneto-optical recording medium was obtained. The coercive force showed a value of about 3.3 kOe, and it was confirmed that the squareness of the hysteresis loop was good.

【0049】そして、この光磁気記録媒体を用い初期に
記録された信号情報についてREADパワー(再生パワ
ー):2mWの条件で連続して100万回繰返し再生し
たところ、初期に較べて100万回後の再生信号のCN
Rは2.1dBも低下しており再生信号の劣化が起きて
いることが確認できた。
Then, the signal information recorded initially using this magneto-optical recording medium was continuously and repeatedly reproduced 1 million times under the condition of READ power (reproduction power): 2 mW. Of the reproduction signal of
R was reduced by 2.1 dB, and it was confirmed that the reproduced signal was degraded.

【0050】尚、実施例1と同一の条件で100万回の
E/W/Rサイクルテストを行いその熱感度と磁界感度
を測定したところ、実施例1の光磁気記録媒体と略同様
の結果が得られた。
The thermal sensitivity and the magnetic field sensitivity were measured by performing an E / W / R cycle test 1 million times under the same conditions as in Example 1. The results were almost the same as those of the magneto-optical recording medium of Example 1. was gotten.

【0051】[0051]

【発明の効果】請求項1に係る発明によれば、誘電体干
渉膜よりその熱膨張率が高い材料から成る基板とこの上
に製膜される誘電体干渉膜との間に生ずる応力を抑制で
き、かつ、この基板を80℃以上に加熱した状態で光磁
気記録膜を製膜しているため光磁気記録膜のアニール劣
化を防止することが可能となり、また、上記誘電体干渉
膜と光磁気記録膜との間及び光磁気記録膜と誘電体保護
膜との間には熱膨張率の差異に伴う応力が発生している
ため、上記光磁気記録膜を製膜する際の基板温度が80
℃以上に設定されているにも拘らず上記応力の作用によ
り光磁気記録膜の保磁力の減少を防止することも可能と
なる。
According to the first aspect of the present invention, the stress generated between the substrate made of a material having a higher coefficient of thermal expansion than the dielectric interference film and the dielectric interference film formed thereon is suppressed. In addition, since the magneto-optical recording film is formed in a state where the substrate is heated to 80 ° C. or higher, it is possible to prevent the magneto-optical recording film from being deteriorated by annealing. Since stress is generated between the magnetic recording film and the magneto-optical recording film and the dielectric protective film due to the difference in thermal expansion coefficient, the substrate temperature when forming the magneto-optical recording film is reduced. 80
Despite the temperature being set to not less than ° C., it is also possible to prevent a decrease in the coercive force of the magneto-optical recording film by the action of the stress.

【0052】従って、消去、記録、再生を連続して10
0万回以上繰返しても記録・再生特性の劣化が起こり難
く、しかも、記録情報の再生を連続して100万回程度
繰返してもその再生信号の劣化が起こり難い光磁気記録
媒体を提供できる効果を有している。
Therefore, erasure, recording, and reproduction are continuously performed for 10 times.
The effect of being able to provide a magneto-optical recording medium in which the recording / reproducing characteristics are unlikely to be degraded even when repeated over 100,000 times, and the reproduced signal is unlikely to be degraded even when the reproduction of the recorded information is continuously repeated about 1,000,000 times. have.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例に係る光磁気記録媒体の構成を示す断面
図。
FIG. 1 is a sectional view showing a configuration of a magneto-optical recording medium according to an embodiment.

【図2】実施例1に係る光磁気記録媒体についてその初
期の記録レーザパワーとCNRとの関係を示すグラフ図
と100万回のE/W/Rサイクルテスト後の記録レー
ザパワーとCNRとの関係を示すグラフ図である。
FIG. 2 is a graph showing the relationship between the initial recording laser power and the CNR of the magneto-optical recording medium according to the first embodiment, and the relationship between the recording laser power and the CNR after one million E / W / R cycle tests. It is a graph which shows a relationship.

【図3】実施例1に係る光磁気記録媒体についてその初
期の記録磁界とCNRとの関係を示すグラフ図と100
万回のE/W/Rサイクルテスト後の記録磁界とCNR
との関係を示すグラフ図である。
FIG. 3 is a graph showing the relationship between the initial recording magnetic field and the CNR of the magneto-optical recording medium according to the first embodiment, and FIG.
Recording magnetic field and CNR after 10,000 E / W / R cycle tests
FIG. 6 is a graph showing the relationship between

【図4】実施例1に係る光磁気記録媒体についてその磁
化と外部磁場の関係を示した磁化曲線(M−Hループ)
のグラフ図である。
FIG. 4 is a magnetization curve (MH loop) showing the relationship between the magnetization and the external magnetic field of the magneto-optical recording medium according to the first embodiment.
FIG.

【図5】比較例1に係る光磁気記録媒体についてその初
期の記録レーザパワーとCNRとの関係を示すグラフ図
と100万回のE/W/Rサイクルテスト後の記録レー
ザパワーとCNRとの関係を示すグラフ図である。
FIG. 5 is a graph showing the relationship between the initial recording laser power and the CNR of the magneto-optical recording medium according to Comparative Example 1, and the relationship between the recording laser power and the CNR after one million E / W / R cycle tests. It is a graph which shows a relationship.

【図6】比較例1に係る光磁気記録媒体についてその初
期の記録磁界とCNRとの関係を示すグラフ図と100
万回のE/W/Rサイクルテスト後の記録磁界とCNR
との関係を示すグラフ図である。
6 is a graph showing the relationship between the initial recording magnetic field and the CNR of the magneto-optical recording medium according to Comparative Example 1, and FIG.
Recording magnetic field and CNR after 10,000 E / W / R cycle tests
FIG. 6 is a graph showing the relationship between

【図7】比較例1に係る光磁気記録媒体についてその磁
化と外部磁場の関係を示した磁化曲線(M−Hループ)
のグラフ図である。
FIG. 7 is a magnetization curve (MH loop) showing the relationship between the magnetization and the external magnetic field of the magneto-optical recording medium according to Comparative Example 1.
FIG.

【図8】比較例2に係る光磁気記録媒体についてその磁
化と外部磁場の関係を示した磁化曲線(M−Hループ)
のグラフ図である。
FIG. 8 is a magnetization curve (MH loop) showing the relationship between the magnetization and the external magnetic field of the magneto-optical recording medium according to Comparative Example 2.
FIG.

【図9】従来例に係る光磁気記録媒体の構成を示す断面
図。
FIG. 9 is a sectional view showing the configuration of a magneto-optical recording medium according to a conventional example.

【符号の説明】[Explanation of symbols]

11 透明基板 21 誘電体干渉膜 31 光磁気記録膜 41 誘電体保護膜 51 反射膜 61 オーバーコート層 DESCRIPTION OF SYMBOLS 11 Transparent substrate 21 Dielectric interference film 31 Magneto-optical recording film 41 Dielectric protection film 51 Reflection film 61 Overcoat layer

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−159363(JP,A) 特開 平6−124489(JP,A) (58)調査した分野(Int.Cl.7,DB名) G11B 11/105 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-62-159363 (JP, A) JP-A-6-124489 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G11B 11/105

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】誘電体干渉膜と、この誘電体干渉膜上に製
膜されその磁化容易軸が膜面に対し垂直な希土類−遷移
金属合金を主成分とする光磁気記録膜と、この光磁気記
録膜上に製膜された誘電体保護膜を基板上に備える光磁
気記録媒体の製造方法において、 上記誘電体干渉膜よりその熱膨張率が高い材料にて上記
基板を構成し、かつ、この基板上に誘電体干渉膜をスパ
ッタリング法により製膜した後、基板を80℃以上に加
熱しこの温度条件下において上記誘電体干渉膜上に光磁
気記録膜と誘電体保護膜をスパッタリング法により順次
製膜することを特徴とする光磁気記録媒体の製造方法。
1. A dielectric interference film, a magneto-optical recording film formed on the dielectric interference film and mainly composed of a rare earth-transition metal alloy whose easy axis of magnetization is perpendicular to the film surface; In a method for manufacturing a magneto-optical recording medium including a dielectric protective film formed on a magnetic recording film on a substrate, the substrate is made of a material having a higher coefficient of thermal expansion than the dielectric interference film, and After forming a dielectric interference film on the substrate by sputtering, the substrate is heated to 80 ° C. or higher, and under this temperature condition, a magneto-optical recording film and a dielectric protection film are formed on the dielectric interference film by sputtering. A method for manufacturing a magneto-optical recording medium, comprising sequentially forming a film.
JP29564492A 1992-11-05 1992-11-05 Method for manufacturing magneto-optical recording medium Expired - Fee Related JP3146219B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29564492A JP3146219B2 (en) 1992-11-05 1992-11-05 Method for manufacturing magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29564492A JP3146219B2 (en) 1992-11-05 1992-11-05 Method for manufacturing magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPH06150412A JPH06150412A (en) 1994-05-31
JP3146219B2 true JP3146219B2 (en) 2001-03-12

Family

ID=17823323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29564492A Expired - Fee Related JP3146219B2 (en) 1992-11-05 1992-11-05 Method for manufacturing magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JP3146219B2 (en)

Also Published As

Publication number Publication date
JPH06150412A (en) 1994-05-31

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