JP3140551B2 - Electron beam recording medium - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam recording medium.

[0002]

2. Description of the Related Art As is well known, an electron beam recording medium uses an electron beam diffraction image and a drawing pattern (still image) using an electron beam.
This is applied to a device that needs to record data such as a crystal structure evaluation device and a semiconductor process device.

FIG. 3 shows a typical method of recording an electron diffraction image. First, when the glass plate 2 having the surface coated with the fluorescent agent 1 is irradiated with an electron beam, the irradiated portion fluoresces. The fluorescent light is photographed using the camera 3 or the like, and the fluorescent pattern is recorded on a film attached to the camera 3.

[0004]

However, the recording method of FIG. 3 has the following disadvantages. (1) Since it is difficult to uniformly apply the fluorescent agent 1 to the glass plate 2, a fine electron beam diffraction image cannot be fluorescent (image is blurred). (2) Since the phosphor screen is photographed by the camera 3, the adjustment error of the optical system of the photographing device (camera) is included in the recorded image.

[0005] Therefore, a recording method having such a drawback is used in a crystal evaluation apparatus (reflection high-speed electron beam diffraction: RHEED,
When used for low-energy electron beam diffraction (LEED), the above (1),
Since the error due to (2) is included in the recorded diffraction image, an error occurs in the measurement of the lattice constant and the rotation angle of the rotating crystal.

The present invention has been made in view of the above circumstances, and provides an electron beam recording medium capable of accurately recording a fine electron beam diffraction image without causing an error in measurement of a lattice constant and a rotation angle of a rotating crystal. The purpose is to provide.

[0007]

According to the present invention, there is provided an electron beam recording medium comprising a substrate having at least an upper surface having conductivity, and a microcrystalline layer formed on the substrate.

In the present invention, the microcrystalline layer has a thickness of about 2 nm to 5 nm.
There is a case where it is composed of a fine single crystal of 0 nm (microcrystal) and a microcrystal support supporting the crystal, or a case where it is composed of only a microcrystal. As the shape of the microcrystal,
There are a case of granular (see FIG. 6) and a case of column (see FIG. 7). In the microcrystal layer, atoms such as hydrogen, oxygen, and fluorine are usually adsorbed to dangling bonds on the surface of the microcrystal. The optical properties of the microcrystals are disclosed in, for example, the Japan Society of Applied Physics, Proceedings of the Spring Meeting of 1992, 30p-ZR-5, “Optical Properties of Nanosize Materials”. Further, the formation of the microcrystalline layer is a case of a polycrystalline Si layer, for example, “solid state physics”, visible light luminescence of porous silicon,
2.1 PS formation conditions (p152).

Next, the principle of the electron beam recording medium according to the present invention will be described with reference to FIGS. 1 (A) and 1 (B) and FIGS. 2 (A) and 2 (B). Here, FIG. 1B is a plan view of FIG. 1A, and FIG. 2B is a back view of FIG. 2A. FIG.
1, reference numeral 11 denotes a transparent substrate, 12 denotes a transparent electrode formed on the transparent substrate 11, and 13 denotes a microcrystalline layer formed on the transparent electrode 12.

That is, when a voltage is applied to the microcrystalline layer 13 (current is injected), light is emitted between the levels formed due to the quantum size effect and the surface effect of the microcrystal. Next, FIG.
As shown in FIG. 3A, when the microcrystal layer 13 is irradiated with an electron beam, fluorine, hydrogen (H), and the like adsorbed on the irradiated microcrystal layer 13 are desorbed, so that the surface effect of the microcrystal is reduced. Is suppressed, that is, the emission level density is reduced. As a result, when a pattern such as the letter "A" or a figure such as "A" is drawn on the microcrystalline layer 13 using an electron beam, fluorine, hydrogen, and the like in the drawn pattern portion are eliminated (see FIG. 1B). . FIG.
In (B), 14 denotes an electron beam irradiation area, and 15 denotes an electron beam non-irradiation area.

When a recorded pattern is reproduced, an electrode 16 is formed on the microcrystalline layer 13 as shown in FIG. 2A, and a voltage is applied between the electrode 16 and the transparent electrode 12.
A region of the microcrystalline layer 13 from which fluorine, hydrogen, or the like has been desorbed hardly emits light, and only a region from which fluorine or hydrogen has not been desorbed emits light. Therefore,
Since the pattern portion drawn by irradiating the electron beam hardly emits light, the recorded pattern can be read when viewed from the transparent substrate side (see FIG. 2B). Note that FIG.
In (B), reference numeral 17 denotes a non-light emitting region, and reference numeral 18 denotes a light emitting region.

If the electrode sandwiched between the substrate and the microcrystal layer is opaque, the electrode formed on the microcrystal during reproduction is made transparent, and the recorded pattern is read from the side opposite to the substrate. In this case, the substrate may be opaque. Further, when both electrodes are transparent, the pattern can be read from both sides of the substrate (however, the substrate is transparent).

[0013]

The case where a microcrystalline layer is formed on a transparent substrate via a transparent electrode will be described.

Applying voltage (injecting current) to the microcrystalline layer
Then, light is emitted between levels formed due to the quantum size effect and the surface effect of the microcrystal. Next, when the microcrystal layer side is irradiated with an electron beam, fluorine, hydrogen, and the like adsorbed to the irradiated microcrystal layer portion are desorbed, so that the surface effect in the microcrystal is suppressed, that is, the emission level density is reduced. Reduction occurs. As a result, when a pattern such as a character or a figure is drawn on the microcrystalline layer using an electron beam, fluorine, hydrogen, and the like in the drawn pattern portion are eliminated.

When reproducing a recorded pattern, an electrode is formed on the microcrystalline layer, and when a voltage is applied between the electrode and the transparent electrode, a region of the microcrystalline layer from which fluorine, hydrogen or the like has been desorbed. Emits little light, and emits light only in a region that has not been desorbed. Therefore, since the pattern portion drawn by irradiating the electron beam hardly emits light, the recorded pattern can be read when viewed from the transparent substrate side.

[0016]

Embodiments of the present invention will be described below. (Example 1)

FIG. 6 is an explanatory view of the electron beam recording medium according to the first embodiment. 31 in the figure is a glass substrate. On this glass substrate 31, a transparent electrode 32 made of, for example, SnO ₂ or ZnO is formed. The glass substrate 31
And the transparent electrode 32 are collectively referred to as a transparent substrate. The transparent electrode
On the 32, a Si microcrystalline layer 33 is formed. here,
The Si microcrystal layer 33 is composed of the SiO ₂ microcrystal support 33a and
And a 50 nm Si microcrystal 33b.

The electron beam recording medium having such a configuration is manufactured as follows. First, a transparent electrode 32 is formed on a glass substrate 31 by, for example, an evaporation or sputtering method. next,
The glass substrate 31 is placed on the transparent electrode
32 is placed on the lower side, and at the bottom of the reaction vessel, Si powder (lump) is dispersed on the upper surface, and sputtering is performed in a state in which a SiO ₂ target is disposed. The microcrystalline layer 33 is formed, and an electron beam recording medium 34 is manufactured. In addition, instead of the Si, G
e, CdS, etc.

The electron beam recording medium 34 having the above structure is mounted on an electron beam diffractometer, for example, as shown in FIG. In FIG. 4, reference numeral 41 denotes an evaluation room, 42 denotes an observation window provided in the evaluation room 41, and 43 denotes a sample for evaluation. If the electron beam diffraction image is reflected on the surface of the Si microcrystal layer while the electron beam recording medium 34 is mounted near the observation window of the above apparatus, the diffraction image shows that fluorine, hydrogen, etc. are desorbed from the Si microcrystal layer 33. I do. That is, a diffraction image is recorded on the microcrystalline layer. In order to reproduce the recorded diffraction image, a conductive paste or the like may be applied on the Si microcrystalline layer 33 (corresponding to development in a normal photograph), and a voltage may be applied to the transparent electrode.

Next, the electron beam recording medium according to the first embodiment
When transferring a pattern of an electronic circuit or the like onto the Si microcrystalline layer 33 of FIG. First, a pattern of an electronic circuit or the like is drawn on the Si microcrystalline layer 33 using an electronic drawing apparatus or the like, and an electrode 51 is formed thereon. Subsequently, a photosensitive agent (resist or the like) 52 is applied in advance to a substrate (for example, a semiconductor wafer) 51 on which a pattern is to be transferred, and the electron beam recording medium 34 of the present invention is placed thereon, and the transparent electrode 32 and the electrode 53 The pattern is transferred by applying a voltage between them to emit light. Thus, the electron beam recording medium according to the first embodiment.
If the pattern is transferred using the S.34, it is not necessary to draw an electron beam for each sheet, so that a large number of exactly the same patterns can be transferred. (Example 2)

FIG. 7 is an explanatory view of an electron beam recording medium according to Embodiment 2 of the present invention. Example 2 is different from Example 1 in that
The difference is that the Si microcrystal layer 41 is composed of a SiO ₂ microcrystal support 33a and columnar Si microcrystals. Here, the columnar Si microcrystals 42 are placed in a HF aqueous solution using a Pt electrode,
The Si microcrystal layer can be formed by etching the Si microcrystal layer with the glass substrate on which the transparent electrodes are formed facing each other (“solid state physics”, visible light luminescence of porous silicon, 2.1 PS formation conditions (p. 152)). )).

In the above embodiment, the Si microcrystal layer is made of S
iO ₂ has dealt with the case of being constituted from a microcrystalline support and Si microcrystals having a predetermined particle size (or columnar Si microcrystals), not limited to this, for example, there are SiO ₂ microcrystals support Instead, the Si microcrystal layer may be composed of only Si microcrystals having a predetermined grain size.

In the above embodiment, the case has been described in which the substrate is composed of a transparent substrate and a transparent electrode formed thereon.
It is not limited to this. For example, the base may be a transparent substrate in which at least the surface is made of a material having conductivity. Further, the electrode may be opaque or the substrate may be non-transparent. However, in this case, the electrode formed on the microcrystal during reproduction is made transparent, and the recorded pattern is read from the side opposite to the substrate.

[0024]

As described above in detail, according to the present invention, an electron beam recording medium capable of accurately recording a fine electron beam diffraction image without causing an error in the measurement of the lattice constant and the rotation angle of the rotating crystal. Can be provided.

[Brief description of the drawings]

FIG. 1 is a view for explaining the principle of an electron beam recording medium according to the present invention. FIG. 1 (A) is a schematic sectional view of the electron beam recording medium, and FIG. 1 (B) is FIG. FIG.

FIGS. 2A and 2B are diagrams for explaining reproduction of a pattern recorded on the electron beam recording medium of FIG. 1, wherein FIG. 2A is a cross-sectional view of the medium, and FIG. 2B is FIG. FIG.

FIG. 3 is an explanatory view showing a typical electron beam diffraction image recording method.

FIG. 4 is an explanatory diagram when the electron beam recording medium is incorporated in an electron beam diffraction device.

FIG. 5 is an explanatory diagram in the case of pattern transfer using the electron beam recording medium according to the present invention.

FIG. 6 is an explanatory diagram of the electron beam recording medium according to the first embodiment of the present invention.

FIG. 7 is an explanatory diagram of an electron beam recording medium according to a second embodiment of the present invention.

[Explanation of symbols]

31: glass substrate, 32: transparent electrode, 33, 41: microcrystalline layer, 33
a: SiO ₂ microcrystal support, 33b: Si microcrystal, 42: columnar microcrystal.

Claims (1)

(57) [Claims] 1. An electron beam recording medium comprising: a base having at least an upper surface having conductivity; and a microcrystalline layer formed on the base.