JP3137598B2 - Magnetoresistive element, magnetic transducer and antiferromagnetic film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element for reading out a magnetic field strength of a magnetic recording medium or the like as a signal, and in particular, a magnetoresistive element capable of reading a small magnetic field change as a large electric resistance change signal. and,
The present invention relates to a magnetic transducer such as a magnetoresistive head using the same.

[0002]

2. Description of the Related Art As the density of magnetic recording increases, read-only heads are being replaced by magnetoresistive heads (hereinafter simply referred to as "MR heads"). The MR head utilizes the magnetoresistance effect, and senses a change in magnetic flux from a recording medium, that is, a signal magnetic field by a change in resistance. The output voltage is a magnetoresistive effect element (hereinafter simply referred to as “MR
Element) and the sense current flowing through the MR element. Therefore, the output voltage to be sensed can be increased, and the value of the output voltage can be freely changed according to the value of the sense current. In this respect, unlike the induction type magnetic head, the output voltage does not depend on the relative speed between the head sensor unit and the recording medium.

Hitherto, in an MR head, a NiFe alloy has been used for an MR element whose resistance changes by sensing a change in magnetic flux from a recording medium. This NiFe alloy is excellent in anisotropic magnetoresistance effect (hereinafter, simply referred to as “AMR”), and has a good response in a small magnetic field because it is a soft magnetic material.

However, two biases are required for the NiFe alloy to operate optimally as an MR element. That is, first, a lateral bias applied perpendicular to the magnetic recording medium surface and parallel to the MR element plane is required so that the magnetic field response of the MR element becomes linear.
The lateral bias is applied to a soft film bias layer (for example, NiFeRh, N) bonded to the NiFe alloy layer via a magnetic separation layer (for example, composed of Ta or the like).
This is caused by the flow of a sensing current through iFeCr or the like.

Second, a vertical bias is required to suppress Barkhausen jump noise (hereinafter simply referred to as “BHN”) generated when a multi-domain in the MR element moves a domain wall in response to a magnetic field. Is done. This vertical bias is
For example, the MR element is provided by an exchange coupling magnetic field (hereinafter simply referred to as “Hua”) generated by a laminated film of a NiFe alloy and an antiferromagnetic material (for example, FeMn). Hua is a magnetic field generated by the exchange interaction at the contact surface between the ferromagnetic material and the antiferromagnetic material.

By this exchange coupling, the MR element NiF
A longitudinal bias acts on the e alloy, and as a result, the magnetic domain structure of the NiFe alloy approaches a single magnetic domain and controls BHN.

An MR head using such an AMR is
Since the MR element is a NiFe alloy, the magnetoresistance ratio (hereinafter, simply referred to as “MR ratio”) is about 2 to 3%. Therefore, recently, a giant magnetoresistive effect (hereinafter, referred to as "GMR") has been proposed as a film replacing NiFe.
An artificial lattice film or a spin valve film (for example, PHYSIC
AL REVIEW B 43, 1297, 1991, JP-A-4-35
No. 8310) has attracted attention. Among the films exhibiting GMR, the spin valve film has attracted much attention because of its easier structure and smaller operating magnetic field than the artificial lattice film. In some cases, this spin valve film was actually studied as a magnetoresistive element of a magnetoresistive read head.
IEEE TRANSACTION ON MAGNETICS Vol. 30, p. 3801, 1994
Reported in the year. The reported spin valve film has a soft magnetic layer (also called a free layer) which responds to a magnetic field.
iFe etc.) and a ferromagnetic layer (NiFe, C
oFe, CoFeNi, etc.) and antiferromagnetic layers (FeM
n) and the non-magnetic material (C)
u, Au, Ag, etc.). This spin valve film is 3 to 3 times thicker than the NiFe alloy.
It shows a very high MR change rate of 10%. The GMR of the spin valve film has a magnetization direction fixed by the magnetization (Mf) of the soft magnetic layer that can freely respond to a magnetic field and the pinned layer (Hua generated at the contact surface between the ferromagnetic layer and the antiferromagnetic layer). 2
When the magnetization (Mp) of the layer film is parallel, the resistance of the spin valve film is minimized. The resistance at this time is defined as R0. Also,
When Mf and Mp are antiparallel, the resistance of the spin valve film becomes maximum. The resistance at this time is defined as Rm. G at this time
The MR change rate is given by (Rm-R0) / R0.

When the magnetization directions are parallel to each other, the current flowing in the spin valve film causes electrons to be scattered by spin at the interface between the nonmagnetic layer and the soft magnetic layer and at the interface between the nonmagnetic layer and the pinned layer. And the resistance is minimal.

Conversely, when the magnetization directions are antiparallel, the current flowing in the spin valve film is generated at the interface between the nonmagnetic layer and the soft magnetic layer and at the interface between the nonmagnetic layer and the pinned layer. Electrons are scattered by spin, and the resistance increases.

[0010] MR head using AMR and GMR
In any case, in a spin valve head (MR head) using a magnetic layer, a so-called pinning operation for generating Hua by laminating and joining a ferromagnetic film and an antiferromagnetic film is necessary. In an MR head using AMR, pinning is performed to generate a longitudinal bias magnetic field to control BHN. In a spin valve head, pinning is performed to fix magnetization.

As the material of the antiferromagnetic film that generates Hua, a γ-FeMn alloy or US Pat.
No. 5), NiO, α-Fe ₂ O ₃ , Fe, Co,
A Mn gamma phase alloy containing an element selected from Cu, Ge, Ni, Pt, and Rh (Japanese Patent Publication No. Sho 60-32330) is known. Further, a material in which Cr is added to FeMn has been proposed (US Pat. No. 4,755,897).

However, the material of the antiferromagnetic film is
It cannot be said that the corrosion resistance or the thermal stability is sufficient, and problems such as deterioration of Hua due to corrosion and deterioration of Hua due to temperature change occur. In addition, the spin valve film is required to have a high blocking temperature (temperature at which Hua becomes zero) in addition to the above-mentioned problem. Furthermore, in the manufacturing process, it is also required that the blocking temperature is within a certain range for performing the so-called orthogonal heat treatment, and that the blocking temperature can be arbitrarily selected to some extent.

[0013]

DISCLOSURE OF THE INVENTION The present invention has been made in view of such a situation, and has as its object to provide excellent corrosion resistance and thermal stability, no deterioration of Hua, and a sufficient blocking temperature. Providing a high antiferromagnetic layer (pinning layer) and utilizing the characteristics of this antiferromagnetic layer (pinning layer)
To provide a magnetoresistive element including a magnetic multilayer film having excellent corrosion resistance and thermal stability, high magnetic field sensitivity, and a large MR ratio, and a magnetic transducer such as a magnetoresistive head using the same. is there.

[0014]

In order to solve such a problem, the present invention provides a magnetoresistive element, a conductive film,
A magnetic conversion element including an electrode portion, wherein the conductive film is
The magnetoresistance effect element is electrically connected to the magnetoresistance effect element through the electrode portion, and the magnetoresistance effect element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, and a nonmagnetic metal layer. A soft magnetic layer formed on the other surface of the layer; and a soft magnetic layer formed on the ferromagnetic layer (the surface opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the ferromagnetic layer. pin includes a magnetic multilayer film having a seal layer, said pinned _{layer, Ru x M y Mn z (} M is Rh, Pt, Pd, Au,
At least one selected from Ag and Re, and 1 ≦ x
≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10 ≦ x + y
≦ 31 (the unit of x, y, and z is atomic%)).

In a preferred embodiment of the present invention, the pinning layer has an oxygen concentration of 5000 atomic pp.
m or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration of 5000 atomic ppm or less, chlorine concentration of 5000 atomic p
pm or less.

[0016] Preferred embodiments of the present invention, the pinning _{layer, Ru x Rh y Mn z (} 1 ≦ x ≦ 30,1 ≦ y ≦ 3
0, 69 ≦ z ≦ 90, 10 ≦ x + y ≦ 31 (x, y and z are in atomic%)).

[0017] Preferred embodiments of the present invention, the pinning _{layer, Ru x Pt y Mn z (} 1 ≦ x ≦ 30,1 ≦ y ≦ 3
0, 69 ≦ z ≦ 90, 10 ≦ x + y ≦ 31 (x, y and z are in atomic%)).

[0018] Preferred embodiments of the present invention, the pinning _{layer, Ru x M y Mn z (} M is Rh, Pt, Pd, A
at least one selected from u, Ag, and Re;
≦ x ≦ 24, 1 ≦ y ≦ 24, 75 ≦ z ≦ 85, 15 ≦ x
+ Y ≦ 25 (x, y, and z are in atomic%)).

In a preferred embodiment of the present invention, the pinning layer is configured to have a blocking temperature of 160 ° C. or higher.

In a preferred aspect of the present invention, the exchange coupling energy between the pinned layer and the ferromagnetic layer is 0.06 e.
rg / cm ² or more.

As a preferred embodiment of the present invention, the temperature coefficient of the temperature between 80 ° C. and 130 ° C. is −2 × 10 ⁻⁴ to −8 in the relation between the temperature and the exchange coupling energy of the pinned layer and the ferromagnetic layer.
It is configured to be × 10 ^-4 erg / cm ² ° C.

In a preferred aspect of the present invention, the magnetic multilayer film is configured as a spin valve type film exhibiting a giant magnetoresistance.

As a preferred embodiment of the present invention, in the spin-valve type film, the soft magnetic layer comprises a first soft magnetic layer made of Co or an alloy containing 80% by weight or more of Co from the nonmagnetic metal layer side; (Ni _x Fe _1-x ) _y Co _1-y
(0.7 ≦ x ≦ 0.9, 0.5 ≦ y ≦ 0.8 (the unit of x and y is% by weight)), wherein the nonmagnetic metal The layers are Au, Ag and Cu
And at least one material selected from the group consisting of:

As a preferred embodiment of the present invention, the magnetic multilayer film is configured as a film exhibiting an anisotropic magnetoresistance effect.

As a preferred embodiment of the present invention, in the film exhibiting an anisotropic magnetoresistance effect, the soft magnetic layer contains at least one of Rh, Cr, Ta, Nb, Zr and Hf in a NiFe alloy. And a layer functioning as a lateral bias layer, wherein the nonmagnetic metal layer is made of Ta, Ti, Al ₂ O.
₃ or SiO ₂ and is configured to be a layer that functions as a nonmagnetic separation layer.

The present invention is also a magnetic transducer including a magnetoresistive element, a conductor film, and an electrode, wherein the conductor film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistance effect element, a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer,
A soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an upper surface of the ferromagnetic layer (the surface opposite to the surface in contact with the non-magnetic metal layer) for pinning the magnetization direction of the ferromagnetic layer. comprises a magnetic multilayered film including a pinned layer formed on said pinned _{layer, Ru x M y Mn z (} M is Rh, Pt, P
at least one selected from d, Au, Ag, and Re, where 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 4
2 ≦ x + y ≦ 60 (the unit of x, y, and z is atomic%)).

[0027] Preferred embodiments of the present invention, the pinning _{layer, Ru x Rh y Mn z (} 1 ≦ x ≦ 59,1 ≦ y ≦ 5
9, 40 ≦ z ≦ 58, 42 ≦ x + y ≦ 60 (x, y, and z are in atomic%).

[0028] Preferred embodiments of the present invention, the pinning _{layer, Ru x Pt y Mn z (} 1 ≦ x ≦ 59,1 ≦ y ≦ 5
9, 40 ≦ z ≦ 58, 42 ≦ x + y ≦ 60 (x, y, and z are in atomic%).

[0029] Preferred embodiments of the present invention, the pinning _{layer, Ru x M y Mn z (} M is Rh, Pt, Pd, A
at least one selected from u, Ag, and Re;
≤ x ≤ 54, 1 ≤ y ≤ 54, 45 ≤ z ≤ 54, 46 ≤ x
+ Y ≦ 55 (x, y and z are in atomic%)).

The present invention is also a magnetic transducer including a magnetoresistive element, a conductive film, and an electrode, wherein the conductive film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistance effect element, a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer,
A soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an upper surface of the ferromagnetic layer (the surface opposite to the surface in contact with the non-magnetic metal layer) for pinning the magnetization direction of the ferromagnetic layer. And a pinned layer formed on the magnetic layer. The pinned layer is made of Ru _x Mn _100-x (15 ≦ x ≦ 30 (x
Is composed of atomic%)).

In a preferred embodiment of the present invention, the pinning layer is composed of Ru _x Mn _100-x (18 ≦ x ≦ 27 (x is in atomic%)).

The present invention also provides a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetic layer comprising a magnetic multilayer film having a pinning layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the ferromagnetic layer a resistive element, the pinned layer is Ru _x M _y Mn _z (M is R
at least one selected from h, Pt, Pd, Au, Ag, and Re, where 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦
z ≦ 90, 10 ≦ x + y ≦ 31 (x, y and z are in atomic%)).

The present invention also provides a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetic layer comprising a magnetic multilayer film having a pinning layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the ferromagnetic layer a resistive element, the pinned _{layer, Ru x M y Mn z (} M is at least one selected Rh, Pt, Pd, Au, Ag, from Re, 1 ≦ x ≦ 59,1 ≤y≤59,40
≦ z ≦ 58, 42 ≦ x + y ≦ 60 (x, y, and z are in atomic%)).

The present invention also provides a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetic layer comprising a magnetic multilayer film having a pinning layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the ferromagnetic layer In the resistance effect element, the pinning layer may be made of Ru _x Mn _100-x (15
≤ x ≤ 30 (where x is in atomic%).

According to the present invention, the pinning layer (antiferromagnetic layer) is composed of a Ru—Mn-based or Ru—M—Mn-based composition, where M is Rh, Pt, Pd, Au, Ag. , R
e) and the impurity concentration of the pinning layer is also specified, so that it is excellent in corrosion resistance and thermal stability, has high magnetic field sensitivity, and has a large MR change ratio. An element and a magnetic transducer such as a magnetoresistive head using the element can be provided.

[0036]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described in detail.

FIG. 1 is a sectional view showing a preferred example of the magnetoresistance effect element 3 of the present invention. In this embodiment, the magnetoresistive effect element 3 includes a magnetic multilayer film (hereinafter, simply referred to as a magnetic multilayer film 1) as a spin valve film exhibiting a giant magnetoresistance effect. As shown in FIG. 1, the magnetic multilayer film 1 includes a non-magnetic metal layer 30, a ferromagnetic layer 40 formed on one surface of the non-magnetic metal layer 30, and another surface of the non-magnetic metal layer 30. And a ferromagnetic layer 4 for pinning the magnetization direction of the ferromagnetic layer 40.
The layered structure has a pinning layer 50 formed on the surface of the non-magnetic metal layer 30 (the surface opposite to the surface in contact with the nonmagnetic metal layer 30).

As shown in FIG. 1, these laminates are usually formed on a substrate 5, and they are formed on the soft magnetic layer 20, the non-magnetic metal layer 3
0, a ferromagnetic layer 40, and a pinning layer 50 are stacked in this order. On this pinning layer 50, a protective layer 80 for preventing oxidation is usually formed as shown in the figure.

In the magnetic multilayer film 1 (spin valve film) in this embodiment, the soft magnetic layers formed adjacent to both sides of the nonmagnetic metal layer 30 via the nonmagnetic metal layer 30 according to the direction of the externally applied signal magnetic field. It is necessary that the magnetization directions of the ferromagnetic layer 20 and the ferromagnetic layer 40 are substantially different from each other. This is because the principle of the present invention is that when the magnetization directions of the soft magnetic layer 20 and the ferromagnetic layer 40 formed via the nonmagnetic metal layer 30 are misaligned, the conduction electrons undergo spin-dependent scattering. This is because when the resistance increases and the magnetization directions are opposite to each other, the maximum resistance is exhibited. That is, in the present invention, as shown in FIG. 2, when the external signal magnetic field is positive (upward from the recording surface 93 of the recording medium 90 (represented by reference numeral 92)), the adjacent magnetic layers Components in which the directions of magnetization are opposite to each other are generated, and the resistance increases.

Here, the external signal magnetic field from the magnetic recording medium, the soft magnetic layer 20 and the ferromagnetic layer 4 in the (spin valve) magnetic multilayer film used in the magnetoresistive element of the present invention.
The relationship between the directions of the 0 magnetization and the change in the electrical resistance will be described.

Now, in order to facilitate understanding of the present invention, as shown in FIG. 1, one soft magnetic layer 20 and ferromagnetic layer 40 are interposed via one nonmagnetic metal layer 30. The case of a simple magnetic multilayer film will be described with reference to FIG.

As shown in FIG. 2, the magnetization of the ferromagnetic layer 40 is pinned in a downward direction toward the medium surface by a method described later (reference numeral 41). Since the other soft magnetic layer 20 is formed with the non-magnetic metal layer 30 interposed therebetween, its magnetization direction changes its direction by an externally applied signal magnetic field (reference numeral 21). At this time, the relative angle of the magnetization between the soft magnetic layer 20 and the ferromagnetic layer 40 greatly changes depending on the direction of the signal magnetic field from the magnetic recording medium 90. As a result, the degree of scattering of the conduction electrons flowing in the magnetic layer changes, and the electrical resistance greatly changes.

As a result, a large MR (Magn) having a mechanism essentially different from that of the anisotropic magnetoresistance effect of permalloy.
eto-Resistance) effect is obtained.

The magnetization directions of the soft magnetic layer 20, the ferromagnetic layer 40, and the pinning layer 50 exhibiting the pinning effect change relatively to an external magnetic field. FIG. 3 shows the change in the direction of magnetization corresponding to the magnetization curve and the MR curve. Here, the magnetization of the ferromagnetic layer 40 is fixed in the minus direction (downward from the recording surface of the recording medium 90) by the pinning layer 50. When the external signal magnetic field is negative, the magnetization of the soft magnetic layer 20 is also directed in the negative direction. Now, for the sake of simplicity, the coercive force of the soft magnetic layer 20 and the ferromagnetic layer 40 is set to a value close to zero. In the region (I) where the signal magnetic field H is H <0, the magnetization directions of both the soft magnetic layer 20 and the ferromagnetic layer 40 are still in one direction.

When the external magnetic field is increased and H exceeds the coercive force of the soft magnetic layer 20, the magnetization direction of the soft magnetic layer rotates in the direction of the signal magnetic field, and the respective magnetization directions of the soft magnetic layer 20 and the ferromagnetic layer 40 are changed. Become antiparallel, the magnetization and the electrical resistance increase. Then, it becomes a constant value (state of area (II)).
At this time, the pinning layer 50 causes a certain pinning magnetic field Hua.
Is working. When the signal magnetic field exceeds Hua, the magnetization of the ferromagnetic layer 40 also rotates in the direction of the signal magnetic field, and in the region (III), the respective magnetization directions of the soft magnetic layer 20 and the ferromagnetic layer 40 are aligned in one direction. . At this time, the magnetization becomes a certain value and the MR curve becomes 0.

Conversely, when the signal magnetic field H decreases, the regions (III) to (II) and (I) sequentially change in accordance with the magnetization reversal of the soft magnetic layer 20 and the ferromagnetic layer 40 as before. I do.
Here, at the beginning of the region (II), the conduction electrons are scattered depending on the spin, and the resistance increases. Area (II)
Among them, the ferromagnetic layer 40 is pinned and hardly reverses the magnetization, but the soft magnetic layer 20 linearly increases its magnetization. The proportion of the conduction electrons that undergo the scattering gradually increases. That is, for example, Hc is applied to the soft magnetic layer 20.
Ni _0.8 Fe _0.2 with a small anisotropic magnetic field H
By adding k, several Oe to several tens below Hk
With a small external magnetic field in the range of Oe, a magnetic multilayer film having a linear resistance change and a large resistance change rate can be obtained.

In the present invention, the thickness of each thin film layer has a suitable range. The thickness of the nonmagnetic metal layer is 15 to 4
A range of 0 ° is good. If the thickness of the non-magnetic metal layer is greater than 40 °, the proportion of conduction electrons flowing only in this layer increases, and the overall MR change is reduced, which is not convenient. On the other hand, if the thickness is smaller than 15 °, ferromagnetic coupling between the soft magnetic layer 20 and the ferromagnetic layer 40 becomes strong, and the anti-parallel spin state for realizing a large MR effect is obtained. Will not be obtained. On the other hand, conduction electrons are scattered at the interface between the non-magnetic metal layer and the soft magnetic layer 20 and the ferromagnetic layer 40. Therefore, even if the thicknesses of these two magnetic layers 20 and 40 are larger than 200 °, they are substantially reduced. There is no improvement in the effect. Rather, the overall film thickness is increased, which is not convenient. It is preferable that the thickness of these two magnetic layers 20 and 40 be 16 ° or more. If it is thinner than this, heat resistance and processing resistance will deteriorate.

Hereinafter, each configuration of the above-described magnetoresistive element 3 will be described in detail. The first feature of this magnetoresistive element is the composition of the pinning layer 50.

The pinning layer 50 of the present invention, Ru _x M _y M
An _nz system (M is at least one selected from Rh, Pt, Pd, Au, Ag, and Re) or a Ru _x Mn _1-x system.

[0050] First, described first pinning layer 50 made of Ru _x M _y Mn _z system. In this system, M
Are Rh, Pt, Pd, Au, Ag, and Re as described above.
At least one element selected from the group consisting of: M is a ternary composition when only one is selected, and a quaternary composition when two or more are selected. M above
The effects of the present invention can be exhibited in all the ranges described above. In particular, it is preferable to use a ternary system in which Rh or Pt is selected.

[0051] The Ru _x M _y Mn _z system, x, y, and z each represent the ratio of the composition of each element, and is in atomic%. In Ru _x M _y Mn _z system of the present invention, roughly two preferred composition range is present. One of them is (1) 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦
z ≦ 90, 10 ≦ x + y ≦ 31, and (2) 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 4
The range is defined by 0 ≦ z ≦ 58 and 42 ≦ x + y ≦ 60.

(1) 1 ≦ x ≦ 30, 1 ≦ y ≦ 30,
In a range defined by 69 ≦ z ≦ 90 and 10 ≦ x + y ≦ 31, preferably 1 ≦ x ≦ 24, 1 ≦ y ≦ 24,
It is a range defined by 75 ≦ z ≦ 85, 15 ≦ x + y ≦ 25, and more preferably 1 ≦ x ≦ 22, 1 ≦ y ≦ 2.
This range is defined by 2,77 ≦ z ≦ 82 and 18 ≦ x + y ≦ 23. In such a composition range, the value of z is 6
When the value of x + y exceeds 31 atomic%, the value of the exchange coupling magnetic field Hua and the blocking temperature Tb
(Defined as the temperature at which the value of Hua becomes zero). When the value of z is 9
When the value of x + y is less than 10 atomic% exceeding 0 atomic%, both the value of the exchange coupling magnetic field Hua and the blocking temperature Tb decrease as described above, and further, the corrosion resistance decreases with the increase of Mn. Inconvenience also arises. It is considered that in this composition range, an irregular alloy of M and Mn is formed, so that the entire pinning layer 50 exhibits antiferromagnetism and a good exchange coupling magnetic field Hua can be obtained. Further, by adjusting the composition within the range of 10 ≦ x + y ≦ 31, the temperature of the blocking temperature Tb can be arbitrarily set within a range of, for example, 160 ° C. to 250 ° C. Thereby, the orthogonalization of the magnetization required for the spin valve film (orthogonalization of the magnetization of the soft magnetic layer 20 and the magnetization of the ferromagnetic layer 40 (when the external magnetic field is zero)) can be performed smoothly.

(2) 1 ≦ x ≦ 59, 1 ≦ y ≦ 59,
In a range defined by 40 ≦ z ≦ 58 and 42 ≦ x + y ≦ 60, preferably 1 ≦ x ≦ 57, 1 ≦ y ≦ 57,
42 ≦ z ≦ 57, 43 ≦ x + y ≦ 58, more preferably 1 ≦ x ≦ 54, 1 ≦ y ≦ 5
4, 45 ≦ z ≦ 55, 45 ≦ x + y ≦ 55, even more preferably 1 ≦ x ≦ 54, 1 ≦ y ≦ 54, 45 ≦ z ≦
The range is defined by 54, 46 ≦ x + y ≦ 55. In such a composition range, an extremely good exchange coupling magnetic field Hua, blocking temperature Tb, and corrosion resistance are exhibited.
In such a composition range, when the value of z is less than 40 at% and the value of x + y exceeds 60 at%, there is a disadvantage that the value of the exchange coupling magnetic field Hua sharply decreases. Further, when the value of z exceeds 58 at% and the value of x + y is less than 42 at%, there is a disadvantage that the value of the exchange coupling magnetic field Hua sharply decreases as described above. (2) 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z
≦ 58, 42 ≦ x + y ≦ 60, M
n and other elements form an approximately 1: 1 ordered alloy,
It is considered that they show an extremely excellent exchange coupling magnetic field Hua and a blocking temperature Tb. Further, since the amount of Mn is small, the corrosion resistance is extremely excellent. Also,
By adjusting the composition in the range of 42 ≦ x + y ≦ 60, the temperature of Tb can be arbitrarily set in the range of 160 ° C. to 400 ° C., for example. This makes the magnetization orthogonal to the spin valve film (the magnetization of the soft magnetic layer 20 and the ferromagnetic layer 4
The orthogonalization of the magnetization of 0 (when the external magnetic field is zero) can be performed smoothly.

Next, the pinning layer 50 made of Ru _x Mn _100-x will be described. In the binary pinning layer 50, the range of x (x is in atomic%) is 15
≦ x ≦ 30, preferably 18 ≦ x ≦ 27, more preferably 20 ≦ x ≦ 25. If the value of x is less than 15 atomic% or exceeds 30 atomic%, the exchange coupling magnetic field Hua is undesirably reduced. Note that this Ru
When the above-described M is added to the -Mn system, the exchange coupling magnetic field Hua and the blocking temperature Tb are further improved as described above.

The above-mentioned blocking temperature Tb of the pinning layer 50 is 160 ° C. or more, particularly 160 to 400 ° C.
And exhibit extremely high thermal stability (by the way, FeMn conventionally used is about 150 ° C.).

The pinning layer 50 used in the present invention
And the exchange coupling energy Jk between the ferromagnetic layer 40 and
0.06 erg / cm ² or more, especially 0.08 to 0.1
It shows an extremely high value of 8 erg / cm ² . The exchange coupling energy Jk indicates a strength for fixing (pinning) the magnetization of the ferromagnetic layer 40, and the exchange coupling energy Jk is (ferromagnetic layer saturation magnetization) × (Hua) × (film thickness).
Is required.

Further, the relationship between the temperature and the exchange coupling energy between the pinning layer 50 and the ferromagnetic layer 40 is 80 to 13
The temperature coefficient Tc at 0 ° C. is −2 × 10 ⁻⁴ to ⁻⁸ × 10 ⁻⁴ e
Those in the range of rg / cm ² ° C are preferred from the viewpoint of temperature stability. This temperature coefficient Tc is defined as follows. That is, in the graph showing the relationship between the temperature T and the exchange coupling energy Jk, the differential value d (Jk) / d (T) was obtained at 80 ° C. and 130 ° C. within the range of 80 to 130 ° C. The point values are arithmetically averaged, and the average value is defined as a temperature coefficient Tc value.

Further, the pinning layer 50 has an oxygen concentration of 5000 atomic ppm or less, preferably 3 atomic ppm or less.
000 atomic ppm or less, carbon concentration 5000 atomic ppm
Or less, preferably 3000 atomic ppm or less, sulfur concentration of 5000 atomic ppm or less, preferably 3000 atomic pp
m and a chlorine concentration of 5000 atomic ppm or less, preferably 3000 atomic ppm or less. When the oxygen concentration increases, Mn contained in the pinning layer 50 is oxidized, and characteristics as an antiferromagnetic layer (for example,
Hua, Tb, Jk, etc.) deteriorate. In addition, the magnetic properties of the ferromagnetic layer 40 stacked in contact with the pinning layer 50 deteriorate, and the heat resistance is adversely affected. Similarly, carbon, sulfur, and chlorine in the pinning layer 50 also degrade the properties as an antiferromagnetic layer when the concentration exceeds the above range. Therefore, it is necessary to set the thin film forming conditions so as not to exceed the above impurity concentration. The lower limit of the impurity concentration is not limited, and it is preferable that the impurity concentration be as close to zero as possible.

The thickness of the pinning layer 50 is between 50 ° and 1
000 °, preferably 60 ° to 800 °, more preferably 70 ° to 500 °, even more preferably 70 ° to 300 °
It is good to be in the range of. The thickness of the pinning layer 50 is 50
If it becomes thinner, the exchange coupling magnetic field Hua and the blocking temperature Tb decrease sharply. Conversely, a thick portion does not cause much problem, but if it is too thick, the gap length (length between the shields) as the MR head becomes large, and it is not suitable for ultra-high density magnetic recording. Therefore, it is better to be smaller than 1000 °.

The pinning layer 50 is formed by using a method such as an ion beam sputtering method, a sputtering method, a reactive evaporation method, and a molecular beam epitaxy method (MBE). There is no particular limitation on these film forming methods.

The ferromagnetic layer 40 is made of Fe, Ni, Co,
Mn, Cr, Dy, Er, Nd, Tb, Tm, Ce, G
d, etc., and alloys and compounds containing these elements. Particularly, (Co _z Ni ₁ -z) _w Fe _{1 -w} (where 0.4 ≦ z ≦ 1.0, 0.5 ≦ w ≦ 1.0)
It is preferable to configure the composition represented by the following formula. If the composition is out of these ranges, a large change in electric resistance cannot be obtained.

The thickness of the ferromagnetic layer 40 is 16 to
100 °, more preferably 20 ° to 60 °. If this value is less than 16 °, the characteristics as a magnetic layer will be lost. On the other hand, when this value exceeds 100 °, the pinning force from the pinning layer 50 becomes small, and the effect of pinning the spin of the ferromagnetic layer cannot be sufficiently obtained.

Since the ferromagnetic layer 40 is in direct contact with the pinned layer 50 as described above, an interlayer interaction acts directly on the two, and the magnetization rotation of the ferromagnetic layer 40 is prevented.
On the other hand, the soft magnetic layer 20 described later can freely rotate its magnetization by a signal magnetic field from the outside.
As a result, a relative angle is generated in the magnetization of both the soft magnetic layer 20 and the ferromagnetic layer 40, and a large MR effect resulting from the difference in the direction of the magnetization is obtained.

The soft magnetic layer 20 is made of F
e, Ni, Co, etc., and alloys and compounds containing these elements, but the use of a magnetic layer having a small coercive force Hc results in a steep rise of the MR curve, and preferable results can be obtained. It is a particularly preferred embodiment that the soft magnetic layer 20 has a two-layer structure as described below. That is, a first soft magnetic layer composed of Co (cobalt) alone or an alloy containing 80% by weight or more of Co and (Ni _x Fe _{1 -x} ) _y Co _{1 -y} (from the nonmagnetic metal layer 30 side) , 0.7 ≦ x ≦ 0.9, 0.5 ≦ y ≦ 0.8) as a two-layer laminate with the second soft magnetic layer. With this configuration, the Co-rich first soft magnetic layer functions as a diffusion blocking layer,
The diffusion of Ni from the soft magnetic layer side to the non-magnetic metal layer 30 side can be prevented. Further, the first Co-rich soft magnetic layer increases the ability to scatter electrons, and thus has the effect of improving the MR ratio. Note that the second soft magnetic layer is formed within the above composition range in order to maintain soft magnetism.

The soft magnetic layer 20 has a thickness of 20 to
The angle is set to 150 °, preferably 30 to 120 °, and more preferably 50 to 100 °. If this value is less than 20 °, good characteristics as a soft magnetic layer cannot be obtained.
On the other hand, when this value exceeds 150 °, the thickness of the entire multilayer film increases, the resistance of the entire magnetic multilayer film increases, and the MR effect decreases. In the case where the soft magnetic layer 20 is a two-layer laminate as described above, the thickness of the Co-rich first soft magnetic layer may be 4 mm or more.

The soft magnetic layer 20 and the ferromagnetic layer 4
The non-magnetic metal layer 30 interposed between 0 and 0 is preferably a conductive metal in order to efficiently guide electrons. More specifically, at least one selected from Au, Ag, and Cu, or at least one or more of
An alloy containing 0 wt% or more is exemplified.

The thickness of the non-magnetic metal layer 30 is 1
It is preferable that the angle is 5 to 40 °. When this value becomes 15 ° or less, the soft magnetic layer 2
0 and the ferromagnetic layer 40 are exchange-coupled, and the soft magnetic layer 2
There is a disadvantage that the spins of 0 and the ferromagnetic layer 40 do not function independently. This value is 40Å
Is exceeded, the upper and lower soft magnetic layers 20 and the ferromagnetic layers 4
0, the proportion of electrons scattered at the interface decreases, and M
There is an inconvenience that the R change rate decreases.

The protective layer 80 is formed for the purpose of preventing the surface of the magnetic multilayer film from being oxidized in the course of the film forming process and improving the wettability with the electrode material formed thereon and the adhesion strength. This is Ti, Ta, W, Cr, H
It is formed of a material such as f, Zr, and Zn. The thickness is usually about 30 to 300 °.

The substrate 5 is made of glass, silicon, MgO, Ga
It is formed of a material such as As, ferrite, Altic, and CaTiO ₃ . The thickness is usually 0.5 to 10 mm
Degree.

The material and thickness of each layer are defined as described above, and at least at the time of forming the soft magnetic layer 20, an external magnetic field is applied in one direction in the film plane, which will be described later, to obtain an anisotropic magnetic field Hk. From 2 to 20 Oe, more preferably from 2 to 16 Oe, especially 2
It is preferable to add 10 to 10 Oe.

When the anisotropic magnetic field Hk of the soft magnetic layer is less than 2 Oe, the magnetic field becomes almost the same as the coercive force, and a linear MR change curve centered on the zero magnetic field cannot be substantially obtained. The characteristics as an element deteriorate. On the other hand, if it is larger than 20 Oe, when this film is applied to an MR head or the like, the output tends to decrease and the resolution decreases. Here, these Hk are obtained by applying a magnetic field of 10 to 300 Oe during film formation as an external magnetic field. If the external magnetic field is less than 10 Oe, it is not enough to induce Hk, and 300 Oe
Although the effect does not change even if it exceeds, the coil for generating the magnetic field becomes large, and it is inefficient at a high cost.

The above-described magnetic multilayer films 1 may be repeatedly laminated to form a magnetoresistive element. The number n of repeated laminations of the magnetic multilayer film is not particularly limited, and may be appropriately selected according to a target magnetoresistance change rate or the like. In order to cope with the recent ultra-high density of magnetic recording, the thinner the total thickness of the magnetic multilayer film, the better. However, when the thickness is reduced, the MR effect usually decreases at the same time, but the magnetic multilayer film used in the present invention can obtain a multilayer film that can sufficiently withstand practical use even when the number n of times of repeated lamination is one. In addition, as the number of layers increases, the rate of change in resistance also increases. However, productivity deteriorates. Further, if n is too large, the resistance of the entire element becomes too low, which causes practical inconvenience. Is preferably 10 or less.
The preferable range of n is 1-5.

Each layer of the magnetic multilayer film 1 is formed by a method such as an ion beam sputtering method, a sputtering method, a vapor deposition method, and a molecular beam epitaxy method (MBE). When forming the magnetic multilayer film 1 (particularly, when forming the ferromagnetic layer 40 and the pinning layer 50), the ultimate pressure in the vacuum film forming apparatus is set to 1 × 10 ⁻⁷ Torr or less, and water and It is preferable to form a film in an atmosphere having an oxygen partial pressure of 1 × 10 ⁻⁷ Torr or less. Setting such film-forming conditions is preferable because the exchange coupling magnetic field Hua can be improved. As the substrate 5, as described above, glass, silicon,
MgO, GaAs, ferrite, Altic, CaT
iO ₃ or the like can be used. As described above, when forming the soft magnetic layer 20, one direction in the film plane is formed.
It is preferable to apply an external magnetic field of 0 to 300 Oe. Thereby, the anisotropic magnetic field Hk can be applied to the soft magnetic layer 20. The method of applying the external magnetic field is as follows.
Only at the time of zero film formation, the application time of the magnetic field can be easily controlled. For example, a method may be used in which the voltage is applied using an apparatus provided with an electromagnet or the like and is not applied when the pinning layer 50 is formed. Alternatively, a method of constantly applying a constant magnetic field throughout the film formation may be used.

As described above, an anisotropic magnetic field Hk is induced by applying an external magnetic field in at least one direction in the plane of the soft magnetic layer 20 at the time of forming the soft magnetic layer 20, thereby further improving the high frequency characteristics. It can be.

Further, when forming the pinned layer 50, it is preferable to apply a magnetic field in a direction perpendicular to the direction of the applied magnetic field when forming the soft magnetic layer 20. In other words, the direction is in the plane of the magnetic multilayer film and perpendicular to the measured current. The magnitude of the applied magnetic field may be in the range of 10 to 300 Oe. As a result, the magnetization direction of the ferromagnetic layer 40 is reliably fixed in the direction of the applied magnetic field (perpendicular to the measurement current) by the pinning layer 50, and the magnetization of the soft magnetic layer 20 whose direction can be easily changed by the signal magnetic field. The most rational antiparallel state can be created. However, this is not a necessary condition, and the directions of the magnetic fields applied when forming the antiferromagnetic layer and when forming the soft magnetic layer may be the same. At this time, after performing the heat treatment at about 200 ° C. in the process after the formation of the magnetic multilayer film, a magnetic field is applied in the direction of the short side of the strip (perpendicular to the direction of the applied magnetic field when the soft magnetic layer 20 is formed). It is preferable to lower the temperature while applying the voltage.

Next, the invention of the magnetoresistance effect element 3 including the magnetic multilayer film 1 described in the above embodiment is developed.
After examining in detail the path through which electrons flow, they came to the invention of the magnetic transducer. The magnetic conversion element referred to here includes a magnetoresistive element, a conductive film, and an electrode portion,
More specifically, it has a broad concept including a magnetoresistive head (MR head), an MR sensor, a ferromagnetic memory element, an angle sensor, and the like. The magnetoresistive head (MR head) according to the present invention includes a spin valve head including a magnetic multilayer film exhibiting a giant magnetoresistance effect (GMR) and a magnetic multilayer film exhibiting an anisotropic magnetoresistance effect (AMR). An MR head having the following is included.

Here, a spin valve head in a magnetoresistive head (MR head) will be described as an example of the magnetic transducer, and will be described below.

As shown in FIG. 4, a magneto-resistance effect type head (MR head) 150 has a magneto-resistance effect element 200 as a magneto-sensitive portion for sensing a signal magnetic field, and both ends of the magneto-resistance effect element 200. And the electrode portions 100, 100 formed in the portions 200a, 200a. And
End 200 of magnetoresistive element 200 as magneto-sensitive part
a, 200a have electrode portions 100, 10
It is preferable that they are connected in a state where they are in contact with zero. Note that the conductor films 120, 120 are provided on the electrode portions 100, 10
It is electrically connected to the magnetoresistive effect element 200 via 0. In the present invention, the conductor film 120 and the electrode portion 100 are divided into a conductor film 120 and an electrode portion 100 for the sake of simplicity in order to make the following description easy to understand. In many cases, these may be considered as one member.

The magnetoresistive element 200 as the magneto-sensitive portion in the MR head has a laminated structure substantially similar to the magnetoresistive element 3 having the magnetic multilayer film 1 shown in FIG. That is, the magnetoresistance effect element 2
00 is replaced by the magnetoresistive element 3 having the magnetic multilayer film shown in FIG.
0 denotes a non-magnetic metal layer 30, a ferromagnetic layer 40 formed on one surface of the non-magnetic metal layer 30, a soft magnetic layer 20 formed on the other surface of the non-magnetic metal layer 30, Magnetic layer 40
And a pinning layer 50 formed on the ferromagnetic layer 40 (on the side opposite to the surface in contact with the nonmagnetic metal layer 30) to pin the direction of magnetization of the ferromagnetic layer 40.

The important point here is that the magnetoresistance effect element 200 formed as described above exhibits a so-called spin valve type magnetoresistance change. The spin valve type magnetoresistive change includes a nonmagnetic metal layer 30, a ferromagnetic layer 40 formed on one surface of the nonmagnetic metal layer 30, and a soft magnetic layer formed on the other surface of the nonmagnetic metal layer 30. A magnetic layer 20,
A pinned layer 50 formed on the ferromagnetic layer for pinning the direction of magnetization of the ferromagnetic layer 40;
The angle formed by the spin of the ferromagnetic layer 40 pinned to 0 is set to be nearly 90 degrees when viewed from the acute angle direction. In practice, the angle is often 45 to 90 degrees, but it is particularly preferable to set the angle to 90 degrees (orthogonalization of magnetization). This is because the magnetoresistive effect curve (MR curve) is left-right asymmetric with respect to the plus and minus external magnetic fields with the center when the external magnetic field is 0.

In order to make the magnetization orthogonal, it is necessary to perform vacuum heat treatment of the magnetic multilayer film 1 in a magnetic field at a temperature equal to or higher than the blocking temperature Tb of the pinning layer 50. This processing is called orthogonal heat treatment, and the temperature at this time is called orthogonal temperature. This can also be realized by orthogonalizing the magnetic field applied during film formation in advance. However, the orthogonal state is disturbed by inevitable heat received in the subsequent head manufacturing process. Therefore, it is preferable to perform the orthogonalizing heat treatment at the end of the head manufacturing process. It is desirable to change only the magnetization direction of the pinning layer 50 during the orthogonal heat treatment. It is desirable that the orthogonalization temperature be higher than the blocking temperature Tb and lower than the temperature at which the induced magnetic anisotropy of the soft magnetic layer 20 disappears. Therefore, when the orthogonalizing heat treatment is performed when the blocking temperature Tb is higher than the temperature at which the induced magnetic anisotropy of the soft magnetic layer 20 disappears, the magnetization direction of the soft magnetic layer 20 becomes easy axis of magnetization with respect to the external magnetic field. Direction, and the magnetoresistive effect curve with respect to an external magnetic field has hysteresis, which causes a problem in linearity. When the blocking temperature Tb is too low than the temperature at which the induced magnetic anisotropy of the soft magnetic layer 20 disappears, the exchange coupling is caused by the temperature applied during the operation of the MR sensor in the magnetic recording system and during the spin valve head manufacturing process. There is a problem that the magnetic field Hua is deteriorated and cannot function as a spin valve film. That is, it is preferable to form the pinning layer 50 having the blocking temperature Tb at a temperature slightly lower than the temperature at which the induced magnetic anisotropy of the soft magnetic layer 20 disappears, and to perform the orthogonalization heat treatment. In the present invention, the blocking temperature Tb in the range of 160 to 400 ° C. can be selected by appropriately setting the composition of the pinning layer 50 within the above range. The orthogonalization heat treatment is performed in a range of about 150 to 410 ° C.

As shown in FIG. 4, a magneto-resistance effect type head (MR head) 150 includes a magneto-resistance effect element 200.
In addition, shield layers 300 are formed so as to sandwich the electrode portions 100 up and down, and a nonmagnetic insulating layer 400 is formed between the magnetoresistive element 200 and the shield layers 300. .

Here, the ferromagnetic layer 40, the non-magnetic metal layer 30, and the
The soft magnetic layer 20 and the pinning layer 50 are preferably made of the same material and thickness as those described in the embodiment of the magnetic multilayer film.

As shown in FIG. 4, the electrode section 10 through which a current flows is provided.
0 is the end 20 of the magnetoresistive element 200 in the stacking direction.
0a and 200a are in contact with each other. Then, the electrons are magnetically scattered by the spin direction between the soft magnetic layer 20 and the ferromagnetic layer 40 while flowing around the portion sandwiched between the soft magnetic layer 20 and the ferromagnetic layer 40, and the resistance of the element is greatly changed. . Therefore, a minute change in the external magnetic field can be detected as a large change in electric resistance.

The rising portion of the MR curve is determined by the magnetization rotation of the soft magnetic layer 20. In order to obtain a steeper rise of the MR curve, it is desirable that the soft magnetic layer 20 completely changes the direction of the magnetization by the rotation of the magnetization with respect to the signal magnetic field. However, actually, magnetic domains are generated in the soft magnetic layer 20, and domain wall movement and magnetization rotation occur simultaneously with respect to the signal magnetic field. As a result, Barkhausen noise occurred, and the MR head characteristics became unstable.

The inventors have conducted intensive studies and, as a result, as shown in FIG. 5, for example, between the magnetoresistive element 200, which is a magneto-sensitive part, and the electrode part 100 for flowing a measurement current, as shown in FIG. It was confirmed that the noise could be improved by interposing the connecting hard magnetic layer 500 having a thickness of 50 nm and made of CoPtCr. Needless to say, in this case, the connection hard magnetic layer 500 and the entire ends 200 a and 200 a of the magnetoresistive element 200 are connected in contact with the connection hard magnetic layer 500. The connecting hard magnetic layers 500 and 500 formed adjacent to the magnetoresistive element (magnetic multilayer film) are in direct magnetic contact with the soft magnetic layer constituting the magnetic multilayer film. The added connection hard magnetic layer 500 has the effect of bringing the magnetic domains of the soft magnetic layer in the magnetic multilayer film closer to a single magnetic domain structure and stabilizing the magnetic domain structure. As a result, the soft magnetic layer in the magnetic multilayer film operates in the magnetization rotation mode with respect to the signal magnetic field, and can obtain good characteristics without noise. In addition, the electrode part 100 is Ta,
It is a single or composite of Cu, W, Ti, and Au, and has a single-layer or multilayer structure.

It is particularly preferable that the MR head provided with the spin valve film of the present invention has a head structure as shown in FIG. That is, the magnetoresistive effect element 200, which is a magnetically sensitive part, and the electrode part 100 for flowing a measurement current.
As shown, the connecting soft magnetic layer 520 and the antiferromagnetic layer 800 (or the hard magnetic layer 800) are sequentially interposed from the magnetoresistive element 200 side as shown. In addition, one end of the coupling soft magnetic layer 520 and the antiferromagnetic layer 800 (or the hard magnetic layer 800) covers a part of the upper part 200 a (in the direction close to the soft magnetic layer) of the magnetoresistive element 200. The other end side is the lower surface 1 of the electrode portion 100 as shown in the figure.
01 and is formed. Further, the electrode unit 100
The end 102 located on the center side of the head covers a part of the upper part 200 a (in the direction close to the soft magnetic layer) of the magnetoresistive element 200, and the upper end of the coupling soft magnetic layer 520 and the antiferromagnetic layer 800. The portions 520a and 800a are formed so as to cover the respective portions. In addition, as the soft magnetic layer 520 for connection, for example, NiFe, NiFeCr, NiFeR
h, NiFeRu, CoZrNb, FeAlSi, Fe
ZrN or the like (with a thickness of about 10 nm) is used, and as the antiferromagnetic layer 800, Ru ₅ Rh ₁₅ Mn, NiMn, FeM
n, PtMn, α-Fe ₂ O ₃ etc. (about 50 nm thick)
And the hard magnetic layer 800 is made of CoPt, Co
PtCr or the like (about 50 nm in thickness) is used.

With such a configuration, a vertical bias can be applied very efficiently by the effects of both the soft magnetic layer 520 for connection and the antiferromagnetic layer 800 formed in the magnetoresistive element 200. Thus, MR head characteristics in which Barkhausen noise is suppressed can be obtained. Further, since the end portion 102 of the electrode portion 100 is formed so as to cover the magnetoresistive effect element 200 as described above, the signal magnetic field at the element end portion is not reduced, and the width is as narrow as 1 μm or less. An MR head that can easily form a track width can be provided.

When these MR heads are manufactured, heat treatments such as baking, annealing, and resist curing are inevitable during the manufacturing process, such as patterning and flattening.

Generally, in the magnetoresistive element having the above-described magnetic multilayer film, heat resistance often becomes a problem due to the thickness of each of the constituent layers. In the magnetoresistive element (magnetic multilayer film) according to the present invention, by applying a magnetic field and applying an anisotropic magnetic field to the magnetic layer, the film is heat-treated at 300 ° C. or less, generally at 100 to 300 ° C. for about 1 hour after film formation. I can cope enough. Usually, the heat treatment may be performed in a vacuum, in an inert gas atmosphere, in the air, or the like. Particularly, when the heat treatment is performed in a vacuum (under reduced pressure) of 10 ⁻⁷ Torr or less, a magnetoresistive element (magnetic multilayer) with extremely little characteristic deterioration Film) is obtained. In addition, even in lapping and polishing in the processing step, the MR characteristics hardly deteriorate.

In the above-described magnetoresistive element and magnetic transducer, a spin-valve type film (spin-valve head) exhibiting a giant magneto-resistance effect (GMR) has been described as an example. The invention is also applied to an MR head using a film exhibiting a magneto-resistance effect (AMR), that is, a permalloy.

The MR head using this permalloy has a soft magnetic layer (soft film bias layer) functioning as a lateral bias layer, a nonmagnetic metal layer functioning as a nonmagnetic separation layer, and a magnetoresistance such as permalloy on a substrate. Antiferromagnetic layer (pinning layer) for fixing (pinning) the magnetization by applying a longitudinal bias to the effect layer (ferromagnetic layer) and magnetoresistive layer
Are sequentially provided, and the configuration itself of the magnetic multilayer film is the same as that of the spin valve type film described above. The effect of the antiferromagnetic layer (pinning layer) is the same. The soft magnetic layer contains a NiFe alloy containing at least one of Rh, Cr, Ta, Nb, Zr, and Hf and functions as a lateral bias layer, for example, CoZrMo, NiFeR.
A soft magnetic material having a large specific resistance such as h is used. The non-magnetic metal layer is made of Ta, Ti, Al ₂ O ₃ or SiO ₂ and functions as a non-magnetic separation layer. As the antiferromagnetic layer (pinning layer), a layer having a composition within the scope of the present invention described above is used. This embodiment can be more clearly understood from the examples described later.

[0093]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention of the above-described magnetoresistive effect element and the invention of a magnetic transducer (for example, an MR head) using the same will be described in more detail with reference to the following specific examples.

Example 1 First, a multilayer film as shown in FIG. 7 was produced as a prototype sample for examining the magnitude of the exchange coupling magnetic field Hua. That is, a sample having a configuration in which an underlayer 7, a ferromagnetic layer 40, an antiferromagnetic layer 50, and a protective layer 80 were sequentially laminated on a glass substrate 5 was produced (specific composition of the sample will be described later). This sample was produced by an RF sputtering method and a DC magnetron sputtering method, and a film was formed in a magnetic field by applying an induction magnetic field in a fixed direction during film formation. The exchange coupling magnetic field Hua is a vibrating sample magnetometer (VSM).
A magnetization curve was drawn in a magnetic field of 1 KOe using the above method, and the magnetization curve was determined from the magnetization curve. FIG. 8 shows a typical example of a magnetization curve measured using a vibrating sample magnetometer (VSM). In this figure, the magnetization curve A indicates an easy axis direction (a direction in which a magnetic field was applied during film formation), The magnetization curve B indicates the direction of the hard axis. As shown in FIG. 8, the magnetization curve in the easy axis direction is shifted from the origin 0 by the exchange coupling magnetic field Hua, and is shifted from the origin F to a point E (between the points C and D).
Is defined as Hua.

In the structure shown in FIG. 7, as a specific sample, an underlayer 7 (Ta;
nm), a ferromagnetic layer 40 (NiFe; thickness 10 nm), the antiferromagnetic layer 50 as a pinning layer (Ru _x Mn _100-x;
A sample in which a 15 nm thick layer and a protective layer 80 (Ta; 5 nm thick) were sequentially laminated from the substrate side was manufactured. In preparing the sample, Ru _x Mn of the antiferromagnetic layer 50 was used.
A plurality of samples having various composition ratios of _1-x were prepared, an exchange coupling magnetic field Hua was determined for each sample, and the value of the exchange coupling magnetic field Hua was converted into a value of the exchange coupling energy Jk. And the R of the antiferromagnetic layer 50
FIG. 9 shows the relationship with the u content. From the results shown in FIG. 9, the Ru content ratio x (unit is atomic%) is 15 ≦ x ≦
It can be seen that good results are obtained in the range of 30, preferably 18 ≦ x ≦ 27.

FIG. 10 shows the result of X-ray diffraction of the Ru ₂₃ Mn ₇₇ film, and a composition peak indicating the composition was confirmed.

Embodiment 2 In the structure shown in FIG. 7, as a specific sample,
Glass substrate 5 over the base layer 7 (Ta; thickness 5 nm), a ferromagnetic layer 40 (NiFe; thickness 10 nm), the antiferromagnetic layer 50 as a pinning layer (Ru _x Rh _y Mn _z; thickness 15n
m), a sample in which a protective layer 80 (Ta; thickness 5 nm) was sequentially laminated from the substrate side was produced. In preparing the samples, a plurality of samples in which the composition ratio of Ru _x Rh _{y M} n _z of the antiferromagnetic layer 50 (x, y, and z are each atomic%) were variously prepared, and each sample was replaced. The coupling magnetic field Hua is determined, and Ru-R as shown in FIG.
A distribution diagram of the exchange coupling magnetic field Hua in the ternary diagram of h-Mn was created.

[0098] Ru _x Rh _y Mn 3 of _z as shown in Figure 11
From the original drawing, 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 9
0,10 ≦ x + y ≦ 31 (x, y, and z are in atomic%)) and 1 ≦ x ≦ 59, 1 ≦ y ≦ 59,
It can be seen that suitable results are obtained in the range of 40 ≦ z ≦ 58 and 42 ≦ x + y ≦ 60. In addition, Ru-Mn and Rh-
It can be seen that Hua can be improved by adding Rh or Ru as the third component to the Mn binary system, and the favorable Hua composition range becomes wider than that of the binary system.

Further, instead of the above-mentioned ternary Rh, R
Even when at least one selected from h, Pt, Pd, Au, Ag, and Re is used, 3 shown in FIG.
It was confirmed that good results were obtained as in the original system.

Next, according to the creation procedure of FIG.
Blocking temperature T in the ternary diagram of Ru-Rh-Mn
The distribution map of b was created. FIG. 12 shows the result. FIG.
Ternary diagram of the second _{Ru x Rh y Mn z, 1} ≦ x ≦ 30,
1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10 ≦ x + y ≦ 31
(Where x, y, and z are in atomic%)) and 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 42 ≦
Extremely high blocking temperature Tb in the range of x + y ≦ 60
(About 160 to 325 ° C.). In other words, the blocking temperature Tb in the above composition range
Can be controlled to 160 to 325 ° C. FIG. 13 shows the result of X-ray diffraction of the Ru ₂₂ Rh ₈ Mn ₇₀ film, and a peak indicating the composition was confirmed.

Example 3 In the structure shown in FIG. 7, first, as a specific sample, an underlayer 7 (Ta;
m), a ferromagnetic layer 40 (Ni ₈₁ Fe ₁₉ ; thickness 10 nm),
The antiferromagnetic layer 50 as a pinning layer (Ru _x M _y Mn
_z : thickness 15 nm), protective layer 80 (Ta; thickness 5 nm)
Were sequentially laminated from the substrate side to produce a sample. In addition,
In preparing the sample, the Ru _x R of the antiferromagnetic layer 50 was used.
to prepare a h _y Mn plurality of samples variously changed and the composition ratio of _z, for each sample, the exchange coupling magnetic field Hua, the blocking temperature Tb, the exchange coupling energy Jk, and the temperature coefficient of the exchange coupling energy (Tc) was determined, respectively . The results are shown in Table 1 below.

[0102]

[Table 1] In the above Table 1, represent the material elements corresponding to Ru _x M _y Mn _z as (m1, m2, m3).
From the results shown in Table 1, it is understood that a good exchange-coupling film can be provided by using the pinning layer (antiferromagnetic layer) having a predetermined composition within the range of the present invention.

Further, in addition to the samples shown in Table 1 above, a pinning layer was added to a quaternary Ru ₁₀ Rh ₅ Pt ₅ Mn.
A sample was changed to ₈₀ , and the same characteristics were evaluated as described above. As a result, the exchange coupling magnetic field Hua = 150 Oe, the blocking temperature Tb = 260 ° C., and the exchange coupling energy J
k = 0.12 erg / cm ² and the temperature coefficient of exchange coupling energy (Tc) =-7 × 10 ⁻⁴ erg / cm ² ° C.

Further, the relationship between the exchange coupling energy Jk and the temperature was examined for Samples 1-3 in Table 1 above, and the graph is shown in FIG. As a comparative example, a graph in the case where the pinning layer (antiferromagnetic layer) was changed to an Fe—Mn type (thickness: 15 nm) is also shown. From the graph shown in FIG. 14, it can be seen that the sample of the present invention has an extremely high blocking temperature Tb (250 ° C.) even compared to the Fe—Mn system (Tb of the Fe—Mn system = 150 ° C.).
Further, attention is paid to the gradient (temperature coefficient Tc) of the graph of the exchange coupling energy Jk and the ambient temperature. This temperature coefficient Tc indicates thermal stability with respect to the ambient temperature, and the temperature coefficient Tc at 80 ° C. to 130 ° C. of -2.6 × 10 ⁻⁴ erg / cm for FeMn in the antiferromagnetic layer is used. ² ° C., and the temperature coefficient Tc of the sample 1-3 was −5.1 × 10 ⁻⁴ er
g / cm ² ° C, indicating that Sample 1-3 is excellent in thermal stability. The reason why the temperature coefficient is determined between 80 ° C. and 130 ° C. is based on the ambient temperature when the MR head is used in a hard disk drive.

Example 4 In Example 3, when forming the Ru ₁₀ Rh ₁₀ Mn ₈₀ film as the pinning layer (antiferromagnetic layer) shown in Sample 1-3, the atmosphere conditions during the film formation were changed. Samples were prepared with various changes (Sample Nos. 2-1 to N)
o. 2-7) The effect of the impurity concentration on the characteristics of the magnetic film was examined. Further, samples were prepared by changing the composition of the pinning layer (antiferromagnetic layer) in various ways and changing the atmosphere conditions during film formation in various ways (Sample Nos. 2-8 to Sample N).
o. 2-32) The influence of the impurity concentration on the characteristics of the magnetic film was examined. The results are shown in Table 2 below.

[0106]

[Table 2] From the results shown in Table 2 above, as the concentration of oxygen, carbon, sulfur, or chlorine increases, the blocking temperature T
It can be seen that b, the exchange coupling energy Jk, and the gradient of the exchange coupling energy Jk each deteriorate. Therefore, it is necessary to set the conditions so that the oxygen concentration is 5000 atomic ppm or less, and the carbon, sulfur and chlorine concentrations are each 5000 atomic ppm or less.

Example 5 In Example 3 above, when forming the Ru ₁₀ Rh ₁₀ Mn ₈₀ film as the pinning layer (antiferromagnetic layer) shown in Sample 1-3, the ultimate pressure in the film forming apparatus Samples were prepared by changing various conditions such as the pressure and the oxygen partial pressure during film formation, and the effects of these pressure conditions on the properties of the magnetic film were examined. The results are shown in Table 3 below.

[0108]

[Table 3] From the results shown in Table 3, it can be seen that as the ultimate pressure and the oxygen partial pressure increase, the blocking temperature Tb, the exchange coupling energy Jk, and the gradient of the exchange coupling energy Jk each deteriorate. Therefore, it is necessary to form a film under conditions where the ultimate pressure and the oxygen partial pressure (and the water pressure) are sufficiently reduced (attained pressure: 1 × 10 ⁻⁷ Torr or less; × 10 ^-7 Torr or less).

Example 6 A spin valve type magnetoresistive element having the form shown in FIG. 1 was manufactured. That is, the substrate 5 (A with Al ₂ O ₃
1TiC), an underlayer 7 (Ta; thickness 5 nm), a soft magnetic layer 20, and a nonmagnetic metal layer 30 (Cu; thickness 2.5 n).
m), ferromagnetic layer 40, pinned layer (antiferromagnetic layer) 50,
Then, a protective layer 80 (Ta; thickness: 5 nm) was sequentially laminated to produce a device sample. When fabricating an element sample, the soft magnetic layer 20, the ferromagnetic layer 40, and the pinning layer 5
0 and the layer thickness were changed as shown in Table 4 below.
Various samples were made. In the sample preparation, the applied magnetic field during film formation was set in the longitudinal direction of the sample. For such a sample, the MR change rate ΔR / R, the exchange coupling magnetic field Hua, and the blocking temperature Tb were determined. The results are shown in Table 4 below. In the resistance measurement, a sample having a shape of 0.4 × 6 mm was prepared from the sample having the configuration shown in Table 4, and an external magnetic field was applied in a direction perpendicular to the current in the plane, and the resistance was varied from −300 to 300 Oe. The resistance at this time was measured by a four-terminal method. The MR change rate ΔR / R was determined from the resistance. The MR change rate ΔR / R was calculated by the following equation, where ρmax is the maximum specific resistance and ρsat is the minimum specific resistance: ΔR / R = (ρmax−ρsat) × 100 / ρsa
t (%).

[0110]

[Table 4] From the results shown in Table 4, the sample of the present invention has a good MR.
Rate of change, exchange coupling magnetic field Hua, and blocking temperature T
b. In the sample 4-10 as a comparative example, the blocking temperature Tb was 14 because the pinning layer was made of FeMn.
As low as 5 ° C, it is not preferable. Although not shown in the table, there is also a problem with the touch resistance. Sample 4-11 which is a comparative example
Shows good values for both the exchange coupling magnetic field Hua and the blocking temperature Tb, but since the pinning layer is made of NiMn, heat treatment is required at a high temperature for a long time to generate the exchange coupling magnetic field Hua, so that the diffusion of Ni and Cu As a result, the MR ratio decreases, and the MR ratio is as low as 2.9%, which is not preferable.

Example 7 An antiferromagnetic thin film having the composition shown in Table 5 below was formed directly on a 10 × 20 mm glass substrate to a thickness of 100 to 150 ° to prepare a sample for corrosion resistance evaluation. For each sample shown in Table 5, Ag / AgCl was used as a reference electrode, and 1 mmol of Na in a borate buffer solution was used as a solution.
The measurement of the natural electrode (corrosion resistance anodic polarization test) was carried out using the one to which Cl was added. The results are shown in Table 5 below.

[0112]

[Table 5] From the results shown in Table 5, it can be seen that the samples of the present invention have a spontaneous potential of -150 to -40 mV, and all show good corrosion resistance.

In general, a noble metal has a positive spontaneous potential,
Excellent corrosion resistance. On the other hand, even permalloy, which is said to be relatively excellent in corrosion resistance, has a value of about -150 mV. FeMn of the comparative example has a considerably negative value of about -700 mV. In Table 5, it can be said that the closer to 0 mV, the better the corrosion resistance.

Example 8 An anisotropic magnetoresistive (AMR) type magnetoresistive head as shown in FIG. 15 was actually manufactured in the following manner.

First, a magnetic layer serving as a lower shield was formed on an AlTiC substrate 5 having an Al ₂ O ₃ underlayer formed on the surface.
And a laminated substrate on which an Al ₂ O ₃ gap film was sequentially formed. Next, on this laminated substrate, NiFeR is used as a soft magnetic layer 20 for applying a lateral bias to the MR element.
h (17 nm thick), nonmagnetic metal layer (nonmagnetic separation layer) 3
0 is Ta (thickness 10 nm), ferromagnetic layer (magnetoresistive layer) 40 is NiFe (thickness 25 nm), protective layer 8
As 0, Ta (thickness: 5 nm) was sequentially laminated by a thin film forming technique such as magnetron sputtering.

Next, after a photoresist is deposited on the protective layer 80, a pattern for protecting the central active area W1 substantially corresponding to the track width is formed.
The unmasked end passive regions W2 and W3 were removed by etching by reverse sputtering or ion milling. During this etching process, the protective layer 80 and a small amount of the ferromagnetic layer (magnetoresistive layer) 40 were removed. Then, Ru ₁₅ Rh ₅ Mn as a pinning layer (antiferromagnetic layer) 50
₈₀ and the electrode layer 100 were formed. After the formation of the pinning layer (antiferromagnetic layer) 50 and the electrode layer 100, the resist film is removed by a lift-off process, and the anisotropic magnetoresistance effect (AMR) type magnetoresistance effect having a structure as shown in FIG. A mold head was made. Although not shown in FIG. 15, an inductive head portion was formed on the upper shield layer and the lower shield layer via the Al ₂ O ₃ gap film, and further on the upper shield layer.

Embodiment 9 As a modification of the above-described Embodiment 8, FIG.
An anisotropic magnetoresistive (AMR) type magnetoresistive head as shown in FIG. 6 was produced.

First, on the AlTiC substrate 5 having an Al ₂ O ₃ base film formed on the surface, NiFeRh (thickness: 17 n) was used as a soft magnetic layer 20 for applying a lateral bias to the MR element.
m), a nonmagnetic metal layer (nonmagnetic separation layer) 30 of Ta
(Thickness 10 nm), NiFe (thickness 25 nm) as a ferromagnetic layer (magnetoresistive layer) 40, Ru ₁₅ Rh ₅ Mn ₈₀ (thickness 20 n) as a pinning layer (antiferromagnetic layer) 50
m) Ta (5 nm thick) was sequentially laminated as a protective layer 80 by a thin film forming technique such as magnetron sputtering.

Next, after depositing a photoresist on the protective layer 80, a pattern for protecting the central active area W1 substantially corresponding to the track width is formed.
The unmasked end passive regions W2 and W3 were removed by etching by reverse sputtering or ion milling. At this time, an abut junction structure is formed,
Then, after the electrode layer 100 is formed on the end portion removed by milling or the like, the resist film is removed by a lift-off process.
Anisotropic magnetoresistance effect (AM) having a structure as shown in FIG.
An R) type magnetoresistive head was manufactured. In addition,
Although not shown in FIG. 16, an inductive head portion was formed on the upper shield layer, the lower shield layer, and the upper shield layer via an Al ₂ O ₃ gap film.

Example 10 A spin valve (SV) type magnetoresistive head as shown in FIG. 6 was actually manufactured in the following manner.

First, a spin-valve type magnetoresistive element was manufactured. That is, an underlayer 7 (Ta; thickness of 5 n) is formed on a substrate 5 (AlTiC with Al ₂ O ₃ ).
m), soft magnetic layer 20 (NiFe; thickness 7 nm), nonmagnetic metal layer 30 (Cu; thickness 2.5 nm), ferromagnetic layer 40
(Co; thickness 3 nm), pinning layer (antiferromagnetic layer) 50
(Ru ₁₀ Rh ₁₀ Mn ₈₀ ; thickness: 10 nm) and a protective layer 80 (Ta; thickness: 5 nm) were sequentially laminated to produce an element sample. Note that this element sample includes Al ₂ O ₃
An upper shield layer and a lower shield layer are formed via a gap film.

An inductive head as shown in FIG. 6 was formed on this element sample. That is, NiFe is formed to a thickness of 10 nm as the soft magnetic layer 520 for connection, and the antiferromagnetic layer 80 is formed on the soft magnetic layer 520 for connection.
Ru ₅ Rh ₁₅ Mn ₂₀ is formed to a thickness of 10 nm as 0,
An electrode section 100 made of Ta was further formed thereon to produce a spin valve (SV) type magnetoresistive head having the configuration shown in FIG. Then 10 ^-7 Torr
In a vacuum at a right angle to the measurement current direction and in the in-plane direction
The substrate was cooled from 200 ° C. while applying a magnetic field of Oe to induce a pinning effect of the ferromagnetic layer. The track width of the magnetoresistive head was 2 μm. The height of the MR element at this time is 1
μm and the sensing current was 4 mA.

Using this magnetoresistive head, the relationship between the applied magnetic field and the output voltage was examined, and the graph shown in FIG. 17 was obtained. Although this graph was obtained using a type of head without upper and lower shield layers, it was found that the transfer curve had good linearity, high output, and no Barkhausen noise. It could be confirmed.

Embodiment 11 FIG. 18 shows that a magnetoresistive element according to the present invention is a yoke type MR.
An example applied to a head is shown. Here, notches are provided in some of the yokes 600 for guiding the magnetic flux, and the magnetoresistive element 200 is formed therebetween with a thin insulating film 400 interposed therebetween. The magnetoresistive element 200 is provided with electrodes (not shown) for flowing current in a direction parallel or perpendicular to the direction of the magnetic path formed by the yokes 600.

Embodiment 12 FIG. 19 shows an example in which the magnetoresistance effect element according to the present invention is applied to a flux guide type MR head. The magnetoresistive element 200 is formed by magnetically coupling with the flux guide layers 700 and 710 having high specific resistance and high magnetic permeability. The flash guide layers 700 and 710 indirectly conduct a signal magnetic field to the magnetoresistive element 200. In addition, a flux back guide layer 600 (an escape path for magnetic flux passing through the magnetoresistive element 200) is formed via the nonmagnetic insulating layer 400. In addition, the flux back guide layer 600 may be provided on both sides of the magnetoresistive element 200 via the nonmagnetic insulating layer 400. The feature of this head is that the magnetic field detector can be brought close to the recording medium to a level close to contact, and a high output can be obtained.

[0126]

The effects of the present invention are clear from the above results. That is, the present invention provides a pinning layer (antiferromagnetic layer)
Is composed of a Ru-Mn-based or Ru-M-Mn-based composition (M is at least one selected from Rh, Pt, Pd, Au, Ag, and Re), and further defines the impurity concentration of the pinning layer. It has excellent corrosion resistance and heat stability,
It is possible to provide a magnetoresistive element having a magnetic multilayer film having high magnetic field sensitivity and a large MR change rate, and a magnetic transducer such as a magnetoresistive head using the same.

[Brief description of the drawings]

FIG. 1 is a sectional view of a magnetoresistive element according to the present invention.

FIG. 2 is a schematic view of the structure of a magnetoresistive element, particularly a magnetic multilayer film, for explaining the operation of the present invention.

FIG. 3 is a schematic diagram of a magnetization curve and an MR curve for explaining the operation of the present invention.

FIG. 4 is a partially omitted cross-sectional view showing one example of the magnetic transducer of the present invention.

FIG. 5 is a sectional view showing the structure of a magnetoresistive element (magnetic multilayer film) and an electrode section of the magnetic transducer of the present invention.

FIG. 6 is a schematic perspective view showing a preferred connection state between a magnetoresistive element (magnetic multilayer film) and an electrode part of the magnetic transducer of the present invention.

FIG. 7 is a schematic sectional view of a sample of the exchange-coupling membrane of the present invention.

FIG. 8 is a diagram showing an MH loop of the present invention.

FIG. 9 is a graph showing the effect of Ru amount on Jk.

FIG. 10 is a graph showing an X-ray diffraction pattern of a pinned layer made of Ru ₂₃ Mn ₇₇ of the present invention.

FIG. 11 is a diagram showing a distribution of an exchange coupling magnetic field Hua in a ternary diagram of Ru-Rh-Mn.

FIG. 12 is a diagram showing a distribution of a blocking temperature Tb in a ternary diagram of Ru-Rh-Mn.

FIG. 13 is a graph showing an X-ray diffraction pattern of a pinned layer made of Ru ₂₂ Rh ₈ Mn ₇₀ of the present invention.

FIG. 14 is a graph showing a relationship between exchange coupling energy Jk and temperature in the magnetoresistive element (magnetic multilayer film) of the present invention.

FIG. 15 shows the anisotropic magnetoresistance effect (A) of the present invention.
FIG. 2 is a cross-sectional view illustrating an MR) type magnetoresistive head.

FIG. 16 shows the anisotropic magnetoresistance effect (A) of the present invention.
FIG. 2 is a cross-sectional view illustrating an MR) type magnetoresistive head.

FIG. 17 is a graph showing a relationship between an applied magnetic field and an output voltage of the magnetic transducer of the present invention.

FIG. 18 is a partially omitted cross-sectional view showing an example in which the magnetoresistance effect element (magnetic multilayer film) of the present invention is applied to a yoke type MR head.

FIG. 19 is a diagram in which a magnetoresistive element (magnetic multilayer film) of the present invention is applied to a flux guide type MR head 1
It is a partially-omitted sectional view showing an example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Magnetic multilayer film 3 ... Magnetoresistance effect element 5 ... Substrate 20 ... Soft magnetic layer 30 ... Non-magnetic metal layer 40 ... Ferromagnetic layer 50 ... Pinning layer 80 ... Protective layer 90 ... Recording medium 93 ... Recording surface 150 ... Magnetic Resistance effect type head 200 ... Magnetoresistance effect element

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuyuki Yamamoto 1-1-13 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation (56) References JP-A-10-283619 (JP, A) JP-A-9 −35212 (JP, A) WO 98/22636 (WO, A1) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 43/08 G11B 5/39 H01F 10/14

Claims (57)

(57) [Claims] A magnetic transducer including a magnetoresistive element, a conductive film, and an electrode, wherein the conductive film is electrically connected to the magnetoresistive element via the electrode; The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. _{layer, Ru x M y Mn z (} M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re, where 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90,
10 ≦ x + y ≦ 31 (the unit of x, y, and z is atom%)), and the oxygen concentration contained in the pinning layer is 5000 atom p.
pm or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration
Degree of 5000 ppm or less, chlorine concentration of 5000 atoms
ppm. Wherein said pinning layer is, Ru _x Rh _y Mn _z
(1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10
≤ x + y ≤ 31 (x, y, and z are in atomic%))
2. The magnetic transducer according to claim 1, comprising: Wherein the pinned layer, Ru _x Pt _y Mn _z
(1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10
≤ x + y ≤ 31 (x, y, and z are in atomic%))
2. The magnetic transducer according to claim 1, comprising: Wherein said pinning layer _{is, Ru x M y Mn z (} M
Is at least one selected from Rh, Pt, Pd, Au, Ag, and Re, where 1 ≦ x ≦ 24, 1 ≦ y ≦ 24, 7
5 ≦ z ≦ 85, 15 ≦ x + y ≦ 25 (x, y, and z
The magnetic conversion element according to claim 1, wherein the unit of (a) is atomic%)). 5. The blocking temperature of the pinning layer is 1
The magnetic transducer according to claim 1, wherein the temperature is 60 ° C. or higher. 6. The magnetic transducer according to claim 1, wherein an exchange coupling energy between the pinned layer and the ferromagnetic layer is 0.06 erg / cm ² or more. 7. The temperature of the pinned layer and the ferromagnetic layer,
Regarding the exchange coupling energy, the temperature coefficient at 80 to 130 ° C. is −2 × 10 ⁻⁴ to −8 × 10 ⁻⁴ erg / cm ² ° C.
The magnetic transducer according to claim 1, wherein: 8. The magnetic transducer according to claim 1, wherein the magnetic multilayer film is a spin-valve type film exhibiting a giant magnetoresistance effect. 9. The soft magnetic layer according to claim 1, wherein the soft magnetic layer has C
a first soft magnetic layer made of an alloy containing at least 80% by weight of o or Co, and (Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦
0.9, 0.5 ≦ y ≦ 0.8 (the unit of x and y is weight%)), and the non-magnetic metal layer is made of Au, Ag and 9. The magnetic transducer according to claim 8, comprising a material containing at least one selected from Cu. 10. The magnetic transducer according to claim 1, wherein the magnetic multilayer film is a film exhibiting an anisotropic magnetoresistance effect. 11. The soft magnetic layer according to claim 1, wherein the NiFe alloy is made of R
a layer containing at least one of h, Cr, Ta, Nb, Zr, and Hf and functioning as a lateral bias layer, wherein the nonmagnetic metal layer includes a nonmagnetic separation layer including a metal oxide.
This layer functions as a layer, and is made of Ta, Ti, Al ₂ O ₃ or
Magnetic transducer of claim 10 consisting of SiO ₂ is. 12. A magnetoresistive element, a conductive film, and an electrode
And a magnetic conversion element including: The conductor film is provided with the magnetoresistive element through the electrode portion.
With the child, The magneto-resistance effect element includes a non-magnetic metal layer, a non-magnetic metal
The ferromagnetic layer formed on one side of the layer and the nonmagnetic metal layer
A soft magnetic layer formed on the other surface, and a magnetization of the ferromagnetic layer.
Over the ferromagnetic layer to pin the orientation of
Pinning layer formed on the surface opposite to the surface in contact with the layer)
Comprising a magnetic multilayer film having The pinning layer is Ru _x M _y Mn _z  (M is Rh, Pt,
Pd, Au, Ag, R e at least one selected from
Yes, 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90,
10 ≦ x + y ≦ 31 (the unit of x, y, and z is an atom
%)), The magnetic multilayer film has a spin balance exhibiting a giant magnetoresistance effect.
Type membrane. The soft magnetic layer contains Co or Co from the nonmagnetic metal layer side.
A first soft magnetic layer made of an alloy containing 80% by weight or more;
(Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦ 0.9, 0.
5 ≦ y ≦ 0.8 (x and y are in% by weight))
A second soft magnetic layer, The nonmagnetic metal layer is selected from Au, Ag and Cu.
Characterized by being made of a material containing at least one of
Magnetic transducer. 13. A magnetic transducer including a magnetoresistive element, a conductive film, and an electrode, wherein the conductive film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. _{layer, Ru x M y Mn z (} M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re, where 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58,
42 ≦ x + y ≦ 60 (the unit of x, y, and z is atomic%)), and the oxygen concentration contained in the pinning layer is 5000 atom p.
pm or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration
Degree of 5000 ppm or less, chlorine concentration of 5000 atoms
ppm. 14. The pinning layer, Ru _x Rh _y Mn _z
(1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 42
≦ x + y ≦ 60 (x, y and z are in atomic%))
14. The magnetic transducer according to claim 13, comprising: 15. The pinning layer, Ru _x Pt _y Mn _z
(1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 42
≦ x + y ≦ 60 (x, y and z are in atomic%))
14. The magnetic transducer according to claim 13, comprising: 16. The pinning layer, Ru _x M _y Mn
_z (M is at least one member selected from the group consisting of Rh, Pt, Pd, Au, Ag, and Re, where 1 ≦ x ≦ 54, 1 ≦ y ≦ 5
14. The magnetic transducer according to claim 13, wherein 4,45≤z≤54 and 46≤x + y≤55 (where x, y, and z are in atomic%). 17. The magnetic transducer according to claim 13, wherein a blocking temperature of the pinning layer is 160 ° C. or higher. 18. The magnetic transducer according to claim 13, wherein an exchange coupling energy between the pinned layer and the ferromagnetic layer is 0.06 erg / cm ² or more. 19. A temperature coefficient of 80 to 130 ° C. in a relationship between temperature and exchange coupling energy between the pinned layer and the ferromagnetic layer is −2 × 10 ⁻⁴ to −8 × 10 ⁻⁴ erg / cm ^2.
The magnetic transducer according to any one of claims 13 to 18, wherein the temperature is ° C. 20. The magnetic transducer according to claim 13, wherein the magnetic multilayer film is a spin-valve type film exhibiting a giant magnetoresistance effect. 21. The soft magnetic layer is composed of Co or an alloy containing 80% by weight or more of Co from a nonmagnetic metal layer side.
And a soft magnetic layer of (Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x
≦ 0.9, 0.5 ≦ y ≦ 0.8 (the unit of x and y is% by weight)), and the nonmagnetic metal layer is made of Au, Ag. 21. The magnetic transducer according to claim 20, comprising a material containing at least one selected from Cu and Cu. 22. The magnetic transducer according to claim 13, wherein the magnetic multilayer film is a film exhibiting an anisotropic magnetoresistance effect. 23. The soft magnetic layer according to claim 1, wherein the NiFe alloy is made of R
a layer containing at least one of h, Cr, Ta, Nb, Zr, and Hf and functioning as a lateral bias layer, wherein the nonmagnetic metal layer includes a nonmagnetic separation layer including a metal oxide.
This layer functions as a layer, and is made of Ta, Ti, Al ₂ O ₃ or
Magnetic transducer of claim 22 consisting of SiO ₂ is. 24. A magnetoresistive element, a conductive film, and an electrode
And a magnetic conversion element including: The conductor film is provided with the magnetoresistive element through the electrode portion.
With the child, The magneto-resistance effect element includes a non-magnetic metal layer, a non-magnetic metal
The ferromagnetic layer formed on one side of the layer and the nonmagnetic metal layer
A soft magnetic layer formed on the other surface, and a magnetization of the ferromagnetic layer.
Over the ferromagnetic layer to pin the orientation of
Pinning layer formed on the surface opposite to the surface in contact with the layer)
Comprising a magnetic multilayer film having The pinning layer is Ru _x M _y Mn _z (M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re
Yes, 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58,
42 ≦ x + y ≦ 60 (x, y, and z are in atoms
%)), The magnetic multilayer film has a spin balance exhibiting a giant magnetoresistance effect.
Type membrane. The soft magnetic layer contains Co or Co from the nonmagnetic metal layer side.
A first soft magnetic layer made of an alloy containing 80% by weight or more;
(Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦ 0.9, 0.
5 ≦ y ≦ 0.8 (x and y are in% by weight))
A second soft magnetic layer, The nonmagnetic metal layer is selected from Au, Ag and Cu.
Characterized by being made of a material containing at least one of
Magnetic transducer. 25. A magnetic transducer comprising a magnetoresistive element, a conductive film, and an electrode, wherein the conductive film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. The layer is made of Ru _x Mn _100-x (15 ≦ x ≦ 30
(The unit of x is atomic%)), and the oxygen concentration contained in the pinning layer is 5,000 atoms p.
pm or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration
Degree of 5000 ppm or less, chlorine concentration of 5000 atoms
ppm. 26. The pinning layer is made of Ru _x Mn.
26. The magnetic transducer according to claim 25, wherein the magnetic transducer is composed of _100-x (18 ≦ x ≦ 27 (x is in atomic%)). 27. The magnetic transducer according to claim 25, wherein the blocking temperature of the pinning layer is 160 ° C. or higher. 28. The magnetic transducer according to claim 25, wherein the exchange coupling energy between the pinned layer and the ferromagnetic layer is 0.06 erg / cm ² or more. 29. In the relationship between temperature and exchange coupling energy between the pinned layer and the ferromagnetic layer, the temperature coefficient at 80 to 130 ° C. is −2 × 10 ⁻⁴ to −8 × 10 ⁻⁴ erg / cm ^2.
The magnetic transducer according to any one of claims 25 to 28, wherein the temperature is ℃. 30. The magnetic transducer according to claim 25, wherein the magnetic multilayer film is a spin valve type film exhibiting a giant magnetoresistance effect. 31. The soft magnetic layer is composed of Co or an alloy containing 80% by weight or more of Co from the nonmagnetic metal layer side.
And a soft magnetic layer of (Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x
≦ 0.9, 0.5 ≦ y ≦ 0.8 (the unit of x and y is% by weight)), and the nonmagnetic metal layer is made of Au, Ag. 31. The magnetic transducer according to claim 30, comprising a material containing at least one selected from Cu and Cu. 32. The magnetic transducer according to claim 25, wherein the magnetic multilayer film is a film exhibiting an anisotropic magnetoresistance effect. 33. The soft magnetic layer according to claim 1, wherein the NiFe alloy is made of R
a layer containing at least one of h, Cr, Ta, Nb, Zr, and Hf and functioning as a lateral bias layer, wherein the nonmagnetic metal layer includes a nonmagnetic separation layer including a metal oxide.
This layer functions as a layer , and is made of Ta, Ti, Al ₂ O ₃ or
Magnetic transducer of claim 32 consisting of SiO ₂ is. 34. A magnetic transducer including a magnetoresistive element, a conductive film, and an electrode, wherein the conductive film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. The layer is made of Ru _x Mn _100-x (15 ≦ x ≦ 30
(The unit of x is atomic%)), and the magnetic multilayer film has a spin balance exhibiting a giant magnetoresistance effect.
The soft magnetic layer is made of Co or Co from the nonmagnetic metal layer side.
A first soft magnetic layer made of an alloy containing 80% by weight or more;
(Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦ 0.9, 0.
5 ≦ y ≦ 0.8 (x and y are in% by weight))
The nonmagnetic metal layer is selected from Au, Ag and Cu.
Characterized by being made of a material containing at least one of
Magnetic transducer. 35. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. there are, the pinning layer is Ru _x M _y Mn _z (M is Rh, Pt, P
at least one selected from d, Au, Ag, and Re, where 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 1
0 ≦ x + y ≦ 31 (the unit of x, y, and z is atom%)), and the oxygen concentration contained in the pinning layer is 5000 atom p.
pm or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration
The degree is 5000 atomic ppm or less, and the chlorine concentration is 5000 atoms.
A magnetoresistive effect element characterized by being at most ppm. 36. The pinning layer, Ru _x Rh _y Mn _z
(1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10
≤ x + y ≤ 31 (x, y, and z are in atomic%))
36. The magnetoresistance effect element according to claim 35, comprising: 37. The pinning layer comprises Ru _x Pt _y Mn _z
(1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10
≤ x + y ≤ 31 (x, y, and z are in atomic%))
36. The magnetoresistance effect element according to claim 35, comprising: 38. One of a non-magnetic metal layer and a non-magnetic metal layer
The ferromagnetic layer formed on one surface and the other surface of the nonmagnetic metal layer
And the direction of magnetization of the soft magnetic layer formed in
Above the ferromagnetic layer for pinning (contact with non-magnetic metal layer
And a pinning layer formed on the opposite side).
A magnetoresistive effect element comprising a magnetic multilayer film, The pinning layer is Ru _x M _y Mn _z (M is Rh, Pt, P
at least one selected from d, Au, Ag, and Re
1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 1
0 ≦ x + y ≦ 31 (x, y, and z are in atoms
%)), The magnetic multilayer film has a spin balance exhibiting a giant magnetoresistance effect.
Type membrane. The soft magnetic layer contains Co or Co from the nonmagnetic metal layer side.
A first soft magnetic layer made of an alloy containing 80% by weight or more;
(Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦ 0.9, 0.
5 ≦ y ≦ 0.8 (x and y are in% by weight))
A second soft magnetic layer, The nonmagnetic metal layer is selected from Au, Ag and Cu.
Characterized by being made of a material containing at least one of
Magnetoresistive element. 39. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. there, the pinning _{layer, Ru x M y Mn z (} M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re, where 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58,
42 ≦ x + y ≦ 60 (the unit of x, y, and z is atomic%)), and the oxygen concentration contained in the pinning layer is 5000 atom p.
pm or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration
Degree of 5000 ppm or less, chlorine concentration of 5000 atoms
A magnetoresistive effect element characterized by being at most ppm. 40. The pinning layer, Ru _x Rh _y Mn _z
(1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 42
≦ x + y ≦ 60 (x, y and z are in atomic%))
40. The magnetoresistance effect element according to claim 39, comprising: 41. The pinning layer, Ru _x Pt _y Mn _z
(1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 42
≦ x + y ≦ 60 (x, y and z are in atomic%))
40. The magnetoresistance effect element according to claim 39, comprising: 42. The pinning layer, Ru _x M _y Mn
_z (M is at least one member selected from the group consisting of Rh, Pt, Pd, Au, Ag, and Re, where 1 ≦ x ≦ 54, 1 ≦ y ≦ 5
40. The magnetoresistance effect element according to claim 39, wherein the magnetoresistance effect element comprises 4,45≤z≤54, 46≤x + y≤55 (where x, y, and z are in atomic%). 43. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. there, the pinning _{layer, Ru x M y Mn z (} M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re, where 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58,
42 ≦ x + y ≦ 60 (the unit of x, y, and z is atomic%)), and the magnetic multilayer film has a spin balance exhibiting a giant magnetoresistance effect.
The soft magnetic layer is made of Co or Co from the nonmagnetic metal layer side.
A first soft magnetic layer made of an alloy containing 80% by weight or more;
(Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦ 0.9, 0.
5 ≦ y ≦ 0.8 (x and y are in% by weight))
That it is configured to have a second soft magnetic layer, the nonmagnetic metal layer, selected from among Au, Ag and Cu
Characterized by being made of a material containing at least one of
Magnetoresistive element. 44. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. The pinning layer is made of Ru _x Mn _100-x (15 ≦ x ≦ 30
(The unit of x is atomic%)), and the oxygen concentration contained in the pinning layer is 5,000 atoms p.
pm or less, carbon concentration of 5000 atomic ppm or less, sulfur concentration
Degree of 5000 ppm or less, chlorine concentration of 5000 atoms
A magnetoresistive effect element characterized by being at most ppm. 45. The pinning layer is made of Ru _x Mn.
45. The magnetoresistance effect element according to claim 44, wherein the magnetoresistance effect element is constituted by _100-x (18 ≦ x ≦ 27 (the unit of x is atomic%)). 46. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. The pinning layer is made of Ru _x Mn _100-x (15 ≦ x ≦ 30
(The unit of x is atomic%)), and the magnetic multilayer film has a spin balance exhibiting a giant magnetoresistance effect.
The soft magnetic layer is made of Co or Co from the nonmagnetic metal layer side.
A first soft magnetic layer made of an alloy containing 80% by weight or more;
(Ni _x Fe _1-x ) _y Co _1-y (0.7 ≦ x ≦ 0.9, 0.
5 ≦ y ≦ 0.8 (x and y are in% by weight))
The nonmagnetic metal layer is selected from Au, Ag and Cu.
Characterized by being made of a material containing at least one of
Magnetoresistive element. 47. A magnetic transducer including a magnetoresistive element, a conductor film, and an electrode, wherein the conductor film is electrically connected to the magnetoresistive element through the electrode. The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. _{layer, Ru x M y Mn z (} M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re, where 1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90,
10 ≦ x + y ≦ 31 (where x, y, and z are in atomic%)), wherein the magnetic multilayer film is a film exhibiting an anisotropic magnetoresistance effect, and the soft magnetic layer is formed of a NiFe alloy. Rh, Cr, Ta, N
b, containing at least one of Zr and Hf;
A layer functioning as a lateral bias layer, wherein the non-magnetic metal layer includes a non-magnetic separation layer including a metal oxide.
This layer functions as a layer, and is made of Ta, Ti, Al ₂ O ₃ or
Is a magnetic transducer made of SiO ₂ . 48. A magnetic transducer including a magnetoresistive element, a conductor film, and an electrode, wherein the conductor film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. _{layer, Ru x M y Mn z (} M is Rh, Pt,
At least one selected from Pd, Au, Ag, and Re, where 1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58,
42 ≦ x + y ≦ 60 (where x, y, and z are in atomic%)), the magnetic multilayer film is a film exhibiting an anisotropic magnetoresistance effect, and the soft magnetic layer is formed of a NiFe alloy. Rh, Cr, Ta, N
b, containing at least one of Zr and Hf;
A layer functioning as a lateral bias layer, wherein the non-magnetic metal layer includes a non-magnetic separation layer including a metal oxide.
This layer functions as a layer, and is made of Ta, Ti, Al ₂ O ₃ or
Is a magnetic transducer made of SiO ₂ . 49. A magnetic transducer including a magnetoresistive element, a conductive film, and an electrode, wherein the conductive film is electrically connected to the magnetoresistive element via the electrode. The magnetoresistive element includes a nonmagnetic metal layer, a ferromagnetic layer formed on one surface of the nonmagnetic metal layer, a soft magnetic layer formed on the other surface of the nonmagnetic metal layer, And a pinned layer formed on the ferromagnetic layer (on the side opposite to the surface in contact with the nonmagnetic metal layer) to pin the direction of magnetization of the magnetic layer. The layer is made of Ru _x Mn _100-x (15 ≦ x ≦ 30
(The unit of x is atomic%)), the magnetic multilayer film is a film exhibiting an anisotropic magnetoresistance effect, and the soft magnetic layer is made of a NiFe alloy made of Rh, Cr, Ta, N
b, containing at least one of Zr and Hf;
The non-magnetic metal layer is a layer that functions as a non-magnetic separation layer including a metal oxide, and is made of Ta, Ti, Al ₂ O ₃ or SiO _2. Characteristic magnetic transducer. 50. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. there, the pinning _{layer, Ru x Pt y Mn z (} 1 ≦ x ≦ 30,
1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 10 ≦ x + y ≦ 31
(Where x, y, and z are in atomic%)). 51. A non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, A magnetoresistive element comprising a magnetic multilayer film having a pinning layer formed on a ferromagnetic layer (on a surface opposite to a surface in contact with a nonmagnetic metal layer) to pin the direction of magnetization. there, the pinning _{layer, Ru x Pt y Mn z (} 1 ≦ x ≦ 59,
1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 42 ≦ x + y ≦ 60
(Where x, y, and z are in atomic%)). 52. Ru _x M _y Mn _z (M is Rh, Pt, P
at least one selected from d, Au, Ag, and Re
1 ≦ x ≦ 30, 1 ≦ y ≦ 30, 69 ≦ z ≦ 90, 1
0 ≦ x + y ≦ 31 (x, y, and z are in atoms
%)), And the oxygen concentration is 5000 atomic ppm or less.
Below, the carbon concentration is less than 5000 atomic ppm,
000 atomic ppm or less, chlorine concentration 5000 atomic ppm
An antiferromagnetic film characterized by the following. 53. Ru _x M _y Mn _z (M is Rh, Pt, P
at least one selected from d, Au, Ag, and Re
1 ≦ x ≦ 59, 1 ≦ y ≦ 59, 40 ≦ z ≦ 58, 4
2 ≦ x + y ≦ 60 (x, y, and z are in atoms
%)), And the oxygen concentration is 5000 atomic ppm or less.
Below, the carbon concentration is less than 5000 atomic ppm,
000 atomic ppm or less, chlorine concentration 5000 atomic ppm
An antiferromagnetic film characterized by the following. 54. Ru _x Mn _100-x (15 ≦ x ≦ 30 (x
Is composed of atomic%)) and the oxygen concentration is 5000
Atomic ppm or less, carbon concentration 5000 atomic ppm or less,
Sulfur concentration is less than 5000 atomic ppm, chlorine concentration is 500
An antiferromagnetic film characterized by being at most 0 atomic ppm. 55. Interchange in relation to a ferromagnetic film disposed adjacently.
52. A commutation magnetic field is generated.
55. The antiferromagnetic film according to claim 54. 56. An ion beam sputtering method,
, Reactive evaporation, or molecular beam epitaxy
Claim 52, Claim 53, or Claim 54 formed.
2. The antiferromagnetic film according to 1. 57. A film having a thickness of 50 ° to 1000 °.
55. The antiferromagnetic material according to claim 52, 53, or 54.
Membrane.