JP3132433B2 - Method for manufacturing disordered crystal structure, method for manufacturing semiconductor laser, and method for manufacturing semiconductor laser with window structure - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an AlGaInP-based visible light emitting element used as a light source for optical disks such as digital versatile disks (DVD) and magneto-optical (MO) disks, and In used for optical communication and the like.
The present invention relates to a method for manufacturing a disordered crystal structure in a GaAs / AlGaAs-based or InGaAsP / InP-based light-emitting device, a semiconductor laser having a disordered crystal structure, and a method for manufacturing a window-structured semiconductor laser.

[0002]

2. Description of the Related Art In recent years, optical devices using various compound semiconductors have been manufactured with the progress of crystal growth technology, and have greatly contributed to increasing the capacity of optical disks such as DVDs and increasing the speed and capacity of optical communication. Some crystal growth materials used in these optical devices, such as GaInP, InGa
In As, InGaAsP, and the like, changes in various physical properties have been observed due to spontaneous ordering of group III atoms on a sublattice under crystal growth conditions for manufacturing a normal semiconductor light emitting device. In a typical example, there is a change in anisotropy of electro-optical characteristics due to a change in band gap due to a change in crystal symmetry and an anisotropy in ordering.
This is most noticeable in GaInP.

[0003] Many of these ordering phenomena have been reported in many papers such as an organic metal crystal growth method (MOVPE method) and a gas source molecular beam epitaxy method (GSMBE method). For example, Physical Review Letters (1988)
(A. Gomyo et al, Physical Review Lette) published in Vol.
rs Vol.60, p.2645-p.2648 (1988)), II of GaInP crystal grown on a GaAs substrate by MOVPE.
Spontaneous ordering on group I sublattices (natural superlattices)
Has been reported. This ordering phenomenon is important even when it is used in an actual optical device such as a semiconductor laser, and is caused by the control of the oscillation wavelength of the semiconductor laser due to the change in the band gap, the anisotropy of the gain and the azimuthal relationship of the waveguide. It is known that it has a significant effect on lowering the oscillation threshold value.

In addition, Electronics Letters Magazine (19)
Ueno et al. (Y. Ueno et al, Electronics Lett) published in Vol. 26, pp. 1726-1728, 1990.
ers, Vol. 26, p. 1726-p. 1728 (1990)), an AlGaInP visible light window semiconductor laser is reported as an example in which the ordering phenomenon is applied to increase the output of a semiconductor laser. This publication contains (001)
Example in which the ordering structure formed in the GaInP active layer grown on the substrate is disordered only near the end face by Zn diffusion after crystal growth, and a window structure semiconductor laser in which the energy near the end face is increased (GaInP is ordered Energy has been reduced by
When disordered by n diffusion, energy is increased. ) Has been reported.

Next, a conventional semiconductor laser and a conventional semiconductor laser having a window structure will be described. FIG. 5 is a structural view showing a conventional semiconductor laser. The semiconductor laser shown in FIG. 5 is manufactured by stacking a plurality of layers on a (001) substrate by MOVPE.

First, a (001) n-GaAs substrate 200
An n-GaAs buffer layer 170 and n-AlGaI
nP cladding layer 130, MQW active layer 110, p-Al
GaInP cladding layer 120, p-GaInP etching stopper layer 140, p-AlGaInP cladding layer 1
50, a p-GaInP heterobuffer layer 160 is formed in this order.

Next, an n-GaAs block layer 180 is formed only on the side surfaces of the ridge.

Next, a p-GaAs cap layer 1 is formed on the entire surface.
90 are formed.

Finally, the back surface is polished, an n-electrode 220 is formed on the lower surface of the n-GaAs substrate 200, and a p-electrode 210 is formed on the upper surface of the p-GaAs cap layer 190. To manufacture.

FIG. 6 is a structural view showing a conventional window structure semiconductor laser. In the window structure semiconductor laser shown in FIG. 6, G grown on a (001) GaAs substrate is used.
An ordering structure is formed in the aInP active layer, and only in the vicinity of the end face, the ordering structure is disordered by Zn diffusion after crystal growth to increase the energy to form a window. In FIG. 6, 510 is a GaInP active layer, and 520 is a p-
AlGaInP cladding layer 530 is n-AlGaIn
P cladding layer, 540 is p-GaInP layer, 550 is p-GaInP layer.
-GaAs cap layer, 560 is a p-GaAs cap layer, 570 is an n-GaAs block layer, and 580 is nG
aAs buffer layer, 590: n-GaAs substrate, 600
Is a p-electrode, 610 is an n-electrode, 620 is a Zn diffusion region, 6
30 is an order area, and 640 is a disorder area.

[0011]

However, the conventional semiconductor laser and the conventional window structure semiconductor laser have the following problems.

In order to fabricate the conventional visible light semiconductor laser shown in FIG. 5, when a crystal is formed on a (001) GaAs substrate or an off GaAs substrate in the vicinity thereof using a crystal growth method such as the MOVPE method, a general method is used. It is known that the crystal tends to be a crystal having an ordering structure (ordered crystal 260 in FIG. 5). However, when this ordering crystal is used for an active layer of a visible light semiconductor laser, the following disadvantages occur.

First, since the energy of the GaInP active layer is reduced by ordering, it is difficult to shorten the oscillation wavelength. In particular, the oscillation wavelength of a DVD laser is 650n.
In order to obtain m, it is necessary to thin the well of the multiple quantum well structure (MQW structure) or to add Al, but both are disadvantageous in terms of both performance and reliability.

Second, in the MQW structure, GaInP
The broadening of the emission spectrum due to the different ordering of the wells results in a decrease in gain and a lack of sufficient performance.

In order to avoid these problems, conventionally, a method utilizing disordering of an ordering structure by an off-substrate of about 10 to 15 degrees has been used. (00
1) When using an off-substrate of 10 to 15 degrees or more from the substrate
It is known that ordering during crystal growth is inhibited and a disordered crystal structure is obtained. However, even when such an off-substrate is used, it is difficult to control doping due to different adhesion coefficients of impurities, and non-uniform implantation due to tilting of a ridge as a laser waveguide (using anisotropic etching of crystal). Therefore, there are many problems such as difficulty in handling due to inclination of the element side surface. On the other hand, in the conventional window structure semiconductor laser shown in FIG. 6, a disorder of the window region is added after crystal growth. Since the diffusion is performed by Zn diffusion, it is difficult to control the Zn diffusion for forming the window region, and the non-window region also receives a thermal history at the same time, which causes a problem of crystal deterioration. As a result, it has been difficult to manufacture a highly controllable window-structure semiconductor laser.

An object of the present invention is to provide a method for producing a disordered crystal structure which can easily produce a disordered crystal structure without spontaneous ordering of crystal constituting atoms in order to solve the above-mentioned problems.

Another object of the present invention is to provide a method of manufacturing a semiconductor laser having a good MQW active layer having a narrow emission spectrum width and a high gain.

Still another object of the present invention is to provide a method of manufacturing a semiconductor laser having a window structure which is simple and has good controllability without Zn diffusion.

[0019]

The present invention is characterized in that a crystal having a disordered crystal structure is formed on a substrate by a crystal growth method using a surfactant.

According to the present invention, by using a surfactant atom having a large atomic radius, a spontaneous ordering of crystal constituting atoms is easily inhibited to obtain a disordered crystal structure.

As a method of supplying the surfactant, there are a case where the surfactant is deposited on the substrate surface before the crystal growth, and a case where the surfactant is supplied during the crystal growth.

The substrate is made of GaAs, GaAsP, GaP,
It may be formed of a material selected from the group consisting of InP.

[0023] The crystal may have a multilayer structure of a crystal growth material formed by crystal constituent atoms selected from the group consisting of Al, Ga, In, P and As.

The surfactant is preferably an atom having a larger atomic radius than a crystal constituting atom or a compound thereof, and more preferably an atom or a compound thereof in at least the fifth column of the periodic table. Surfactants are:
For example, it is a substance selected from the group consisting of Bi, Tl, a compound of Bi, and a compound of Tl.

A method for manufacturing a semiconductor laser according to the present invention is characterized in that a semiconductor laser is manufactured by the above-described method for manufacturing a disordered crystal structure.

According to the present invention, the active layer can have a disordered crystal structure.

According to the method of manufacturing a semiconductor laser having a window structure of the present invention, there are provided (1) a step of depositing a surfactant in a pattern on a substrate before crystal growth, and (2) a step of growing a crystal on the substrate to deposit the surfactant. And (3) a step of cleaving the above-mentioned region, the steps being performed in the order of (1) to (3). is there.

According to the present invention, the use of the surfactant enables selective disordering of the window region simultaneously with crystal growth.

[0029]

Embodiments of the present invention will be described below with reference to the drawings. First, a method for manufacturing a disordered crystal structure of the present invention and a method for manufacturing a semiconductor laser using the same will be described. FIG. 1 is a structural diagram of an AlGaInP visible light semiconductor laser manufactured using the method for manufacturing a disordered crystal structure of the present invention.

The semiconductor laser shown in FIG.
It is formed by PE growth, that is, a first double hetero (DH) structure growth, a second selective growth of an n-GaAs block layer, and a third complete growth of p-GaAs. Of these, the substantial ordering of GaInP is determined by the first double heterostructure growth.

In the first double hetero (DH) growth,
As shown in FIG. 1, on a (001) GaAs substrate 200, an n-GaAs buffer layer 170 and an n-AlGaIn
P clad layer 130, MQW active layer 110, p-AlG
aInP cladding layer 120, p-GaInP etching stopper layer 140, p-AlGaInP cladding layer 15
0, p-GaInP hetero buffer layer 160 is formed in this order. The MQW active layer 110 is made of GaInP and AlGaI.
It has an nP multilayer structure.

In this growth, the ordering in GaInP and AlGaInP is inhibited by the crystal growth using the surfactant, and the disordered crystal 250 can be obtained.

As the surfactant, an atom having a larger atomic radius than the crystal constituting atoms such as Al, Ga, and In, or a compound thereof is used. As surfactant atoms, use atoms in at least the fifth column of the periodic table,
It is preferable to use atoms in the sixth or more columns of the periodic table. For example, trimethyl bismuth (TMBi) or trimethyl thallium (TMTl), which is an organometallic compound of bismuth (Bi) or thallium (Tl), is used as a surfactant. Surfactant atoms have a large atomic radius, so they are considered to have the effect of changing the surface energy during crystal growth and disrupting the surface rearrangement structure.

On the other hand, in order for ordering to occur, the surface rearrangement structure during crystal growth is important. When a surfactant is used, this surface rearrangement is inhibited.
It is thought that disordered crystals can be produced even on the (001) substrate. The surfactant atom is
It is considered that since a substance having a larger atomic radius than that of the crystal constituting atoms is used, it is hardly taken into the crystal and the surface energy of the crystal surface is continuously modulated while floating or segregating the crystal surface. For this reason, there is no fear of being taken into the crystal and becoming a crystal defect.

As a method of supplying the surfactant, either a method of pre-supplying the surfactant deposited on the substrate surface before crystal growth and not supplying it during the crystal growth, or a method of simultaneous supply during the crystal growth simultaneously with other raw materials. But it works.

Next, in the second selective growth of the n-GaAs block layer, the n-GaAs block layer 180 is formed only on the ridge side surface.

Then, in the third p-GaAs overall growth, a p-GaAs cap layer 190 is formed on the entire surface.

Lastly, the back surface is polished to form an n-electrode 220 on the lower surface of the n-GaAs substrate 200 and a p-electrode 210 on the upper surface of the p-GaAs cap layer 190. Manufacture laser.

According to the semiconductor laser shown in FIG.
1) Since a disordered crystal structure can be formed on a GaAs substrate, a good MQW structure having a narrow emission spectrum width and a high gain can be easily manufactured, and the wavelength can be easily shortened.

Further, since it is not necessary to use a substrate having a large off angle, a good semiconductor laser can be manufactured without a problem of uneven injection due to asymmetric ridges and a problem of handling the side surface of the element.

FIG. 2 is a structural diagram of an InGaAsP long-wavelength semiconductor laser manufactured by using the method for manufacturing a disordered crystal structure of the present invention.

The semiconductor laser shown in FIG.
It is manufactured using the PE method. In the first DH growth, using two parallel stripe masks, (001) n
An n-InP cladding layer 430, a strained MQW active layer 410, and a p-InP cladding layer 420 are sequentially formed on the -InP substrate 470 by selective growth. Strained MQW active layer 410
Are InGaAsP wells and InGaAs having different compositions.
It is composed of an sP barrier.

At this time, by supplying the surfactant, the DH structure including the active layer can be made into the disordered crystal 490.

Next, in the second crystal growth, p-In
A P block layer 440 and an n-InP block layer 445 are formed.

Next, in the third crystal growth, p-In
P cladding layer 450, p-InGaAs cap layer 46
0 are sequentially formed.

Finally, the back surface is polished, and the n-InP substrate 4 is polished.
An n-electrode 485 is provided on the lower surface of the p-type 70 and a p-electrode 48 is provided on the upper surface of the p-InGaAs cap layer 460 via the SiO ₂ 475.
After forming 0, a semiconductor laser is manufactured through a cleavage step and an end face coating step. Note that two parallel grooves 491 and 492 may be formed by wet etching or the like in order to reduce the element capacity.

In the semiconductor laser shown in FIG. 2, a good MQW structure can be formed by forming the active layer into a disordered crystal structure, and a laser having a narrow emission spectrum width and a high gain can be obtained. As a result, low threshold characteristics, high output characteristics, high-speed modulation characteristics, and the like that are better than conventional laser characteristics can be realized.

Next, a method of manufacturing a semiconductor laser having a window structure according to the present invention will be described. FIG. 3 shows an A fabricated using the method for manufacturing a window-structured semiconductor laser of the present invention.
FIG. 4 is a view showing a manufacturing process of an AlGaInP visible light window structure semiconductor laser, in which FIG. 4A is a state after the first DH growth, and FIG. Shows the state immediately before the growth of the n-GaAs block layer, and (c) shows the state after completion.

The semiconductor laser having a window structure shown in FIG. 3 is manufactured by MOVPE three times. D in the first growth
H structure is grown, and n-G
An aAs block layer and a p-GaAs contact layer are grown.

The feature of the present invention is that before the first DH growth,
In the area corresponding to the end face of the window structure semiconductor laser,
The purpose is to deposit surfactant in a pattern.

As a method of depositing the surfactant, an electron beam evaporation method of bismuth, thallium or the like is used. For example, bismuth is deposited on a (001) GaAs substrate by electron beam evaporation to have an average thickness of about several nm (for example,
(About 2 nm). For selective patterning, a lift-off method or the like is used.

Thereafter, the DH by the first MOVPE method is performed.
By forming the structure, only GaInP / AlGaIn crystals grown in the region where the surfactant is deposited
Ordering in the P, MQW active layer, and AlGaInP cladding layer is inhibited, and the disordered crystal 270 can be selectively grown (see FIGS. 3 and 4A). The principle of ordering inhibition by surfactants is the same as described above. After the laser structure is formed, this region is cleaved, whereby a window-structure semiconductor laser having an active layer whose energy is increased only in the vicinity of the end face can be manufactured.

In the first DH growth, as shown in FIG. 3, n-Ga is deposited on a (001) GaAs substrate 200.
As buffer layer 170, n-AlGaInP cladding layer 130, MQW active layer 110, p-AlGaInP cladding layer 120, p-GaInP etching stopper layer 1
40, p-AlGaInP cladding layer 150, p-Ga
The InP hetero buffer layer 160 is formed in this order. MQW
The active layer 110 has a multilayer structure of GaInP and AlGaInP.

Next, in order to make the window region a non-injection region into which current is not simultaneously injected, a ridge is formed on the p-AlGaInP cladding layer 150, and a dielectric mask on the ridge of the window region is formed before the n-GaAs block layer 180 is grown. It is removed so that n-GaAs can be grown on the ridge (see FIG. 4B). In FIG. 4B, 23
0 is a dielectric selective growth mask.

Next, in the second crystal growth, an n-GaAs block layer 180 is formed on the side surfaces of the ridge in the non-window region and on the entire surface of the window region (including on the ridge).

Next, in the third crystal growth, p-
A GaAs cap layer 190 is formed.

Lastly, the back surface is polished to form an n-electrode 220 on the lower surface of the n-GaAs substrate 200 and a p-electrode 210 on the upper surface of the p-GaAs cap layer 190. A window structure semiconductor laser is manufactured (see FIG. 4C).

According to the window-structure semiconductor laser shown in FIGS. 3 and 4, since the use of a surfactant enables selective disordering of the window region simultaneously with crystal growth, it is not necessary to use thermal diffusion of Zn. .
Therefore, a semiconductor laser having a window structure that is simple and has good controllability can be manufactured. As a result, the yield of forming the window region is increased as compared with the related art, and the threshold current and the operating current can be reduced because there is no loss due to absorption of Zn diffused into the active layer.

The present invention is not limited to the above embodiment, and various changes can be made within the technical scope described in the claims. For example, in the above description, the MOVPE method is used as a crystal growth method, but other crystal growth methods such as a molecular beam epitaxy method, a gas source molecular beam epitaxy method, a chemical beam epitaxy method, and a vapor phase epitaxy method may be used. .

As surfactants, Bi, T
Although 1 or these compounds are used, other substances such as Ag, Pt or these compounds may be used.

A GaAs substrate and InP
Although a substrate is used, another substrate such as a GaAsP substrate or a GaP substrate may be used.

Further, AlGaInP is used as a crystal growth material.
System and InGaAsP system are used, but InGaAs
Other crystal growth materials such as GaAs and GaAsSb may be used.

Further, the meaning of “on the substrate” described above includes the case where the off angle from the substrate is within 10 degrees.

[0064]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor laser shown in FIG.
It is produced by a method. In the first DH growth, (0
01) On a GaAs substrate 200, a 0.3 μm thick n-
GaAs buffer layer 170, 1.2 μm thick n-Al
MQW having a multilayer structure of a GaInP cladding layer 130, an 8 nm GaInP well and a 4 nm AlGaInP.
An active layer 110, a p-AlGaInP cladding layer 120 having a thickness of 0.2 μm, a p-GaInP etching stopper layer 140, a p-AlGaInP cladding layer 150 having a thickness of 1.0 μm, and a p-GaInP heterobuffer layer 160 are formed in this order. . The MQW active layer 110 is adjusted so that the laser oscillation wavelength becomes about 650 nm.

As a surfactant, trimethylbismuth (TMBi), which is an organometallic raw material of bismuth, is used.
Was supplied simultaneously with the other organometallic raw materials. Bi has a larger atomic radius than the crystal constituting atoms, and therefore changes the crystal surface energy to obtain a GaInP / AlGaInP MQW.
Ordering in the active layer and the AlGaInP cladding layer was inhibited, and disordered crystals could be obtained.

In the semiconductor laser shown in FIG. 1, a high-quality MQW structure having a narrow emission spectrum width and a high gain can be realized.
01) A good 650 nm band visible light semiconductor laser for DVD was realized on a GaAs substrate. More specifically, the operating current of the laser on the off-substrate is 10 mA compared to 50 mA.
A laser having a good operating current of about 40 mA, which is smaller than A, was produced. In addition, since the laser can be manufactured on a (001) GaAs substrate, a laser with no uneven injection of current and easy element handling can be realized.

In the InGaAsP long wavelength semiconductor laser shown in FIG. 2, the strained MQW active layer 410 is adjusted so that the laser oscillation wavelength is in the 1.3 to 1.5 μm band.

As a surfactant, trimethylbismuth (TMBi) was supplied at the same time as other organometallic raw materials. Thus, the DH structure including the active layer can be formed as the disordered crystal 490.

In the semiconductor laser shown in FIG. 2, a favorable MQW structure could be formed by forming the active layer into a disordered crystal structure, and a laser having a narrow emission spectrum width and a high gain was obtained. As a result, as a laser characteristic, a low threshold characteristic, a high output characteristic, a high-speed modulation characteristic, and the like better than those of the related art were realized.

In the semiconductor laser having the window structure shown in FIGS. 3 and 4, the method of depositing the surfactant is as follows.
1) Bismuth was deposited on a GaAs substrate by electron beam evaporation to an average thickness of about 2 nm. The lift-off method was used for selective patterning.

In the first DH growth, (00
1) On a GaAs substrate 200, 0.3 μm thick n-G
aAs buffer layer 170, 1.5 μm thick n-AlG
aInP cladding layer 130, 8 nm compression strain GaIn
MQW active layer 110 having a P well and a 4 nm AlGaInP multilayer structure, and a 0.3 μm thick p-AlGaI
nP cladding layer 120, p-GaInP etching stopper layer 140, 1.2 μm-thick p-AlGaInP cladding layer 150, p-GaInP heterobuffer layer 16
It is formed in the order of 0. The MQW active layer 110 is adjusted so that the laser oscillation wavelength is about 685 nm.

According to the window-structured semiconductor laser shown in FIGS. 3 and 4, the yield of forming the window region is increased about twice as compared with the conventional one, and there is no loss due to absorption of Zn diffused into the active layer. The threshold current and the operating current were also reduced by 10 to 20 mA.

[0073]

According to the method for producing a disordered crystal structure of the present invention, by using surfactant atoms having a large atomic radius, a disordered crystal structure in which spontaneous ordering of crystal constituting atoms is easily inhibited can be obtained. .

According to the method of manufacturing a semiconductor laser of the present invention utilizing the above-described manufacturing method, the active layer can have a disordered crystal structure, so that the semiconductor having a good MQW structure with a narrow emission spectrum width and high gain can be obtained. Laser can be manufactured.

According to the method of manufacturing a semiconductor laser having a window structure of the present invention, the use of a surfactant enables selective disordering of the window region at the same time as crystal growth. It is possible to realize a semiconductor laser having a window structure with good controllability without passing through.

[Brief description of the drawings]

FIG. 1 is a structural diagram of an AlGaInP visible light semiconductor laser manufactured using a method for manufacturing a disordered crystal structure of the present invention.

FIG. 2 is a structural diagram of an InGaAsP long-wavelength semiconductor laser manufactured using the method for manufacturing a disordered crystal structure of the present invention.

FIG. 3 is a structural diagram of an AlGaInP visible light window structure semiconductor laser manufactured using the method for manufacturing a window structure semiconductor laser of the present invention.

4A and 4B are manufacturing process diagrams of an AlGaInP visible light window structure semiconductor laser, wherein FIG. 4A shows a state after a first DH growth, FIG. 4B shows a state after a ridge is formed and immediately before an n-GaAs block layer is grown, (C) shows the state after completion.

FIG. 5 is a structural view showing a conventional semiconductor laser.

FIG. 6 is a structural view showing a conventional window structure semiconductor laser.

[Explanation of symbols]

110: MQW active layer 120: p-AlGaInP cladding layer 130: n-AlGaInP cladding layer 140: p-GaInP etching stopper layer 150: p-AlGaInP cladding layer 160: p-GaInP hetero buffer layer 170: n-GaAs buffer layer 180: n-GaAs block layer 190: p-GaAs cap layer 200: n-GaAs substrate 210: p-electrode 220: n-electrode 230: dielectric selective growth mask 250: disordered crystal 270: disordered region by surfactant 410: strain MQW active layer 420: p-InP cladding layer 430: n-InP cladding layer 440: p-InP blocking layer 445: n-InP blocking layer 450: p-InP cladding layer 460: p-InGaAs cap layer 470: n-In P substrate 475: SiO ₂ 480: p electrode 485: n electrode 490: disordered crystal 491, 492: groove

──────────────────────────────────────────────────続 き Continued on the front page (56) References A. M. Begley et al. , "Growth of ultrathin films of Feon Au {001}", Physical Review B, Vol. 48, No. 3, 15 July 1993, pp. 1779-1785. -S. Lin et al. , "Growth and atomic structure of epitaxy xial Si films on Ge (111)", Surf. Sci. , Vol. 312, no. 1-2, 1994, pp. 213-220 (58) Fields investigated (Int. Cl. ⁷ , DB name) C30B 1/00-35/00 CA (STN)

Claims (9)

(57) [Claims] 1. A method for producing a disordered crystal structure, wherein a crystal having a disordered crystal structure is formed on a substrate by a crystal growth method using a surfactant, comprising supplying the surfactant during crystal growth. A method for producing a disordered crystal structure. 2. The method according to claim 1, wherein the substrate is GaAs, GaAsP, Ga.
2. The method according to claim 1, wherein the disordered crystal structure is formed of a material selected from the group consisting of P and InP. 3. A method for producing a disordered crystal structure in which a crystal having a disordered crystal structure is formed on a substrate by a crystal growth method using a surfactant, wherein the surfactant is deposited on the surface of the substrate before crystal growth. The method of manufacturing a disordered crystal structure, wherein the substrate is formed of a material selected from the group consisting of GaAs, GaAsP, GaP, and InP. 4. The crystal according to claim 1, wherein said crystal is Al, Ga, In, P, As.
The method for producing a disordered crystal structure according to any one of claims 1 to 3, wherein the method has a multilayer structure of a crystal growth material formed by crystal constituent atoms selected from the group consisting of: 5. The method for producing a disordered crystal structure according to claim 1, wherein the surfactant is an atom having a larger atomic radius than a crystal constituting atom or a compound thereof. . 6. The method for producing a disordered crystal structure according to claim 1, wherein the surfactant is an atom or a compound thereof in at least the fifth column of the periodic table. . 7. The method according to claim 1, wherein the surfactant is Bi, Tl, B
7. The substance according to claim 1, wherein the substance is selected from the group consisting of a compound of i and a compound of Tl.
3. The method for producing a disordered crystal structure according to any one of the above items. 8. A method of manufacturing a semiconductor laser, comprising manufacturing a semiconductor laser by the method of manufacturing a disordered crystal structure according to claim 1. 9. A step of (1) depositing a surfactant in a pattern on a substrate before crystal growth; and (2) disordering only a crystal grown on the substrate and growing in a region where the surfactant is deposited. A method of manufacturing a semiconductor laser having a window structure, comprising: a step of forming a crystal structure; and (3) a step of cleaving the region, wherein the steps are performed in the order of (1) to (3).