JP3128987B2 - Method for manufacturing semiconductor crystal plane, reflector comprising semiconductor crystal plane, and semiconductor quantum structure - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a semiconductor crystal plane, and to a reflector and a semiconductor quantum structure comprising a semiconductor crystal plane fabricated using the method.

[0002]

2. Description of the Related Art Various methods and structures have been proposed for forming semiconductor devices having various structures, for example, semiconductor lasers and quantum structures having a buried structure by forming a semiconductor crystal plane on a substrate by vapor phase growth.

[0003] For example, in an AlGaAs-based compound semiconductor, the fact that the growth conditions of the {111} B crystal plane and the {110} crystal plane are completely different makes use of the fact that a [111] B crystal plane is used as a principal plane on a substrate. 11-2] By forming a mask extending in the crystal axis direction and performing vapor phase growth by MOCVD (metal organic chemical vapor deposition), {11
There has been proposed a method of forming a {0} crystal plane or a method of forming a tetrahedral structure by three {110} crystal planes and a {111} B substrate plane (for example, “vacuum” by Fukui et al.).
34 (1991) 499; T. Fukui et al. Appl. Phys. Lett. 57 (19
90) 1209, T. Fukui et al. Appl. Phys. Lett. 58 (1991)
2018). However, these methods use a {111} B crystal plane substrate, which is considered to be low in versatility and difficult to handle, so as described in the above-mentioned literature,
For example, since the growth conditions are much more difficult than that of a normally used {100} crystal plane substrate, selective growth and integration before and after formation of a crystal growth plane are extremely difficult.

Further, a mask having a window having each side of the <011> and <01-1> crystal axis directions is a
A method has been proposed in which a {111} and {110} crystal plane is formed on an InGaAs substrate and a {111} crystal plane is formed on an InP substrate by growing InGaAs and InP on a {100} crystal plane. For example, YDGal
euchet et al. Appl. Phys. Lett. 58 (1991) 2423). In this case, the {111} crystal is mainly grown (11
1) A method of forming a quantum box structure surrounded by an A crystal plane and a (111) B crystal plane has been proposed. However, if this method is used to form a reflecting mirror such as a laser beam in addition to obtaining a quantum box structure, the method will be described as {11}.
Since the 1 問題 crystal plane forms an irregular angle of 54.7 ° with the {100｝ crystal plane, there is a problem that the optical system becomes complicated.

Alternatively, [01] on the {100} crystal plane
1) (a so-called reverse mesa direction), [01-1] (a so-called forward mesa direction), and [001] an AlGaAs-based semiconductor layer having a thin wire structure extending in each direction of a crystal axis is made of diethyl aluminum chloride (C ₂ H ₅ ). _A method of obtaining a {110} crystal plane and a {111} crystal plane by growing using a hydride-based material such as ₂ AlCl or diethyl gallium chloride (C ₂ H ₅ ) ₂ GaCl has been proposed (for example, J. Lebens et al. al. Appl.Ph
ys. Lett. 56 (1990) 2642, or TFKuechet al. A
ppl.Phys. Lett. 56 (1990) 2642).

Further, a mask having sides along the respective crystal axis directions of [011] and [0-11] is formed on a GaAs substrate, and a material such as trimethylgallium (TMG) or trimethylaluminum (TMA) is used. A method of forming a semiconductor layer by growth and obtaining a quantum box structure surrounded by (111) A and (111) B crystal planes after growth is described (for example, Y. Nagamune et al. Extended Abstracts of t).
he 1991 InternationalConferrence on Solid State De
vices and Materials, Yokohama, pp689-691).

[0007] On the other hand, in Takebe et al., "Technical Report of the Institute of Electrical Engineers of Japan, Technical Committee of Electronic Materials, EFM-91-17, pp69-71",
A step structure is formed on a substrate having a (111) A crystal plane as a main surface, and a semiconductor layer is grown thereon. $ 11
0 ° slope seems to be enclosed, but the intersection of two adjacent equivalent (110) slopes is only equivalent every other one and cannot actually be enclosed. " It is stated that a semiconductor layer surrounded by a {110} crystal plane cannot be formed thereon.

Further, "E. Boeckenhoff et al. JOURNAL of
In CRYSTAL GROWTH 114 (1991) pp610-632 ", 0.5 to 1.5
After forming a columnar ridge having a diameter of μm, a semiconductor layer is formed thereon by MBE (Molecular Beam Epitaxy) to obtain a crystal structure surrounded by {110} crystal planes. However, in this case, Fig.
As shown in FIG. 8, there is a problem that the skirt of the {110} crystal plane is widened and, for example, it is difficult to use as a reflecting mirror surface.

[0009]

SUMMARY OF THE INVENTION The present invention relates to a method for fabricating a semiconductor crystal plane as described above, in which a substrate is formed at an angle of 45.degree.
A method for producing a highly versatile semiconductor crystal surface capable of easily obtaining a shape that can be easily used as a reflecting mirror surface forming the same, that is, under relatively moderate growth conditions, and further obtaining a quantum structure is provided. A mirror surface and a quantum structure can be obtained accurately and easily.

[0010]

As shown in FIGS. 1A and 1B, a method for manufacturing a semiconductor crystal plane according to the present invention is shown in FIGS. 1A and 1B. 2A to 2D are {010} crystal faces and these side faces 2A
2D form a step 2 consisting of a plane parallel to the main surface, and a semiconductor 3 is vapor-phase-grown on a semiconductor substrate having this step so that a portion corresponding to the edge 12E of the step 2 Extending {110} crystal planes are produced, and a semiconductor crystal plane having these {110} crystal planes as constituent planes and having an angle of 45 ° with respect to the main surface is produced.

[0011] The present invention also provides a semiconductor substrate having a {001} crystal plane having an edge extending in the <001> crystal axis direction on a semiconductor substrate having a {100} crystal plane. A semiconductor is vapor-phase grown thereon to generate a {110} crystal plane extending from a portion corresponding to an edge on a portion of the semiconductor substrate where the growth inhibition layer is not formed, and the {110} crystal plane is mainly used as a constituent surface. A semiconductor crystal plane having an angle of 45 ° with respect to the plane is manufactured.

According to another aspect of the present invention, light that travels parallel to the main surface is reflected in a direction substantially perpendicular to the main surface, or is incident perpendicularly to the main surface, by the above-described respective manufacturing methods. A reflecting mirror is constituted by a semiconductor crystal surface that reflects light in a direction substantially parallel to the main surface.

In still another embodiment of the present invention, as shown in FIGS. 2A and 2B, the side surfaces 2A to 2D are (010) and (00) on a semiconductor substrate whose main surface is a (100) crystal plane.
1) has a mesa portion 12 composed of crystal planes of (0-10) and (00-1), and the upper surface 2S is composed of a surface parallel to the main surface. On a semiconductor substrate having the mesa portion 12, Semiconductor 3
(110), (101), (1-10), extending from a portion corresponding to each edge 2E of the mesa portion 12 by vapor phase growth.
(10-1) Each of the crystal planes is formed to form the reflecting mirrors 4A to 4D, and each of the reflecting mirrors 4A to 4D directs light traveling parallel to the main surface in a direction substantially perpendicular to the main surface. A reflecting mirror is constituted by a semiconductor crystal surface so as to reflect light or to make light incident perpendicular to the main surface in a direction substantially parallel to the main surface.

Further, according to the present invention, a semiconductor substrate having a (100) crystal plane as a main surface has side surfaces of (010), (001),
(0-10), (00-1) A mesa portion composed of crystal planes and a plane surrounded by these crystal planes is formed of a plane parallel to the main surface. A semiconductor is provided on the semiconductor substrate having the mesa section. (110), (101), (1-10), (10-1) extending from a portion corresponding to the edge of the mesa portion by being vapor-phase grown
Each crystal plane is formed, and these (110), (101),
(1-10), (10-1) At least 2 of each crystal plane
It has a conductive region 6 in a region surrounded by two crystal planes, and forms a quantum structure in which electrons are confined in the conductive region 6.

[0015]

As described above, in the present invention, the side face is $ 0.
A step formed by a 10 crystal plane, that is, a mesa portion or a groove, or a growth inhibition layer whose edge extends in the <010> crystal axis direction is formed on a semiconductor substrate having a {100} crystal plane as a main surface. Utilizing the fact that a semiconductor is formed by vapor phase growth and a {110} semiconductor crystal plane which naturally forms an angle of 45 ° with respect to the principal plane can be obtained. It constitutes a semiconductor quantum structure as an enclosed conductive region.

According to the present invention, 4
The {110} crystal plane forming 5 ° can be formed on a normal substrate having a main surface of {100} crystal without using a special substrate such as a {111} B substrate. Can grow slowly.

Further, by forming a reflecting mirror with, for example, a quadrangular pyramid-shaped semiconductor crystal plane surrounded by a {110} crystal plane forming 45 ° with respect to the substrate, a light beam in a direction parallel to the substrate is formed by the reflecting mirror. The conversion in the direction perpendicular to the substrate becomes possible, and furthermore, since four surfaces can be obtained at the same time, the configuration can be designed with a degree of freedom corresponding to one or a plurality of light beams. By appropriately selecting the size of the quadrangular pyramid, the interval between the light beams can be narrowed.

Further, according to the present invention, a semiconductor quantum structure can be easily obtained using a {100} substrate, and a semiconductor quantum structure can be manufactured with good controllability and good reproducibility.

[0019]

Embodiments of the present invention will be described below in detail with reference to the drawings. In each example, a GaAs or AlGaAs-based compound semiconductor crystal is manufactured by MOCVD. After describing each example of the crystal plane, a case where a reflecting mirror is formed and a case where a semiconductor quantum structure is formed will be described.

Embodiment 1 First, as shown in FIG. 1A as viewed from above, {100}
A step 2 having an edge 12E along the <001> crystal axis direction on a semiconductor substrate having a crystal plane as a main surface. In this case, a mesa portion having a length of, for example, 10 μm and a height of, for example, 7 μm is shown. In addition, for example, the groove may be formed directly on the substrate by anisotropic etching such as RIE (reactive ion etching), or the groove may be formed by a growth inhibiting layer made of a photoresist or the like. In FIG. 1A, arrows a to d indicate crystal axis directions orthogonal to the respective surfaces of the side surfaces 2A to 2D of the step 2.

Then, as shown in FIG. 1B, Ga
A vapor phase growth of a semiconductor 3 such as As or AlGaAs is performed.
At this time, the growth of the {111} A crystal plane and the {111} B crystal plane is suppressed as much as possible, so that the {110} crystal plane becomes dominant, that is, the {111} crystal plane grows, but the {110} crystal plane grows. An appropriate growth condition is selected so that the growth of the crystal becomes extremely slow.

The growth conditions include, for example, Al _x Ga
_1-x As is converted to x using a methyl-based material such as TMG and TMA.
When crystal growth is performed with = 0 to 0.3, both are as follows in MOCVD under normal pressure or reduced pressure. Growth temperature: 800 ° C or more V / III ratio: 200 or more Growth rate: 0.4 nm / s or less

In addition, in particular, Al _x Ga _{1 -x} As is similarly set to x = 0 to 0. 0 using a material such as triethylgallium (TEG) or triethylaluminum (TEA) as an ethyl-based material.
When growing as No. 3, MOCVD under normal pressure or reduced pressure is performed as follows. Growth temperature: 750 ° C. or more V / III ratio: 100 or more Growth rate: 0.4 nm / s or less

However, of the above conditions, the growth temperature indicates the substrate temperature, the growth rate is that when a flat substrate is used, and V
The / III ratio indicates the ratio of the number of atoms.

When the growth conditions are selected in this way, as shown in FIG. 1B, the {110} crystal plane which forms 45 ° with respect to the main surface of the substrate, ie, the {100} crystal plane,
The semiconductor 3 grows spontaneously as a shape surrounded by the crystal planes of (0), (101), (1-10), and (10-1). This shape could be obtained similarly without depending on the size of the mesa portion 12 described above.

As shown in FIGS. 2A and 2B, when the crystal is grown on the mesa portion 12 under the above-described conditions, the {110} crystal plane grows predominantly in the semiconductor 3. At the same time, three vertical surfaces are provided for each corner on the base side, (010) and (01) in FIG. 2B.
Each crystal plane of 1) and (001) grows. Similarly, at the other corners, three perpendicular planes having {010} crystal planes sandwiched between {011} crystal planes are formed with respect to two adjacent {110} crystal planes, and have an octagonal shape as viewed from above. It is configured to be.

In this case, the {011} crystal plane has a very low growth rate on the same plane as the {110} crystal plane.
The semiconductor 3 does not grow in a direction perpendicular to this plane, and the (100) crystal plane parallel to the main surface and the (01) crystal plane
0), (001), and (0-10) as shown in FIG.
Each crystal plane of (00-1) grows. That is, it can be seen that the crystal grows so as to extend in four directions equivalent to the direction perpendicular to the main surface of the substrate and the <001> crystal axis direction.

In FIG. 3, the shape of the mesa portion 12 before crystal growth shown in FIG. 2A is {110} as shown by a broken line e.
The crystal plane is grown so as to extend from the edge of the mesa portion 12. FIG. 3 shows a configuration of a crystal plane on the opposite side to each crystal plane shown in FIG. 2B.

When the crystal growth is further continued, the semiconductor 3 has an upper portion of (110) and (1-1) as shown in plan and perspective views in FIGS. 4A and 4B, respectively.
0), (101), and (10-1) are closed by the {110} crystal planes to form a quadrangular pyramid. 4, parts corresponding to those in FIGS. 1 and 2 are denoted by the same reference numerals, and redundant description will be omitted.

In the example shown in FIG. 5, the structure of the crystal plane in the case where the height of the mesa portion 12 is formed relatively low and the crystal growth is performed under the above conditions is shown. {010} on the base side
The crystal planes do not grow, and each # 1 that forms 45 ° with respect to the main surface of the substrate
A semiconductor is constituted only by a 10-crystal plane and a {011} crystal plane equivalent to the 10-crystal plane and substantially perpendicular to the main surface of the substrate.

That is, when the height of the mesa portion 12 is relatively high, about 7 μm as described above, or the growth on the region where the mesa portion 12 is not provided is slower than the growth on the mesa portion 12, 2 cannot be caught, the base side has an octagonal shape as shown in FIGS. 2 to 4 described above, and when the mesa portion 12 is formed relatively low, for example, about 2 to 3 μm, as shown in FIG. The {110} crystal plane, which forms 45 ° with respect to the base, extends to the base side.

In the above-described growth conditions, when growing using a methyl-based material, for example, a growth temperature of 800 ° C.
It may be set to about 750 ° C. which deviates from the above, or the growth rate may be deviated from 0.4 nm / s or less to 1 nm / s.
6 and 7 show a perspective view and a plan view of each example, the {111} B crystal plane and the {111}
A crystal plane appears. In FIGS. 6 and 7, portions corresponding to FIGS. 1 and 2 are denoted by the same reference numerals, and redundant description is omitted. In FIG. 6, the (101) crystal plane and (1-10)
(1-11) B crystal plane between the crystal plane and the other side, ie, not shown, but (11-1) B crystal plane between the (10-1) crystal plane and the (110) crystal plane. Shows a case in which Further, as shown in FIG. 7, a (1-1-1) A crystal plane exists between the (10-1) crystal plane and the (1-10) crystal plane,
(11) between the (110) crystal plane and the (101) crystal plane
1) The case where the A crystal plane occurs is shown.

FIG. 8 shows a case where a quadrangular pyramid is formed by four {110} crystal planes, and a case where the mesa portion 12 is formed relatively low, similarly to the case described with reference to FIGS. 4A and 4B. Are shown in FIG. 8 and 9, parts corresponding to those in FIGS. 4 and 5 are denoted by the same reference numerals, and redundant description is omitted.

In the present invention, the extending direction of the step is selected so as to be along the <001> crystal axis direction. On the other hand, a step extending in the <011> crystal axis direction at 45 ° is provided. In this case, as shown in the manufacturing process diagram in FIGS. 10A and 10B, even if the growth conditions are the same as those in each of the above examples, the {110} crystal plane does not grow dominantly and the {111} crystal plane does not grow. A crystal plane and {111}
The shape becomes a mixture of B crystal plane and {110} crystal plane. Further, in this case, since the side surface of the mesa portion 12 is constituted by the {110} crystal plane, the lateral growth on the main surface of the substrate is extremely small, and is different from the structure of the semiconductor crystal plane of the present invention described in each of the above examples. Thus, the crystal face does not extend to the base side.

Embodiment 2 Next, a case where a semiconductor reflecting mirror is formed by using the method for producing a semiconductor crystal plane of the present invention will be described. For example, in the example shown in FIGS. 2A and 2B, each of the {11
The 0 ° crystal plane is configured as reflecting mirrors 4A to 4D. Thus, although not shown, for example, a light beam emitted from a resonator formed on the semiconductor substrate in parallel with the main surface of the substrate can be emitted in a direction perpendicular to the main surface. Similarly, for example, it is also possible to adopt a configuration in which a light beam incident on the substrate from a direction perpendicular thereto is reflected parallel to the main surface of the substrate.

In this case, each of the crystal planes (0-11) and (01-1) is also configured as reflecting mirrors 4C and 4D as shown in FIG. 3 so as to face, for example, four reflecting mirrors 4A to 4D. Resonators may be formed on the respective semiconductor substrates, and the light beams may be emitted in a direction perpendicular to the main surface of the substrate by the reflecting mirrors 4A to 4D so that the light beams are emitted in a rectangular pattern. These light beams can be taken out separately or simultaneously in the vertical direction, and by appropriately selecting the size of the pyramid, the intervals between the beams can be made small enough that they do not interact with each other. be able to.

Also, as described in FIGS. 4 and 5 above, a structure grown until the top is closed by four {110} crystal planes, or as described in FIGS. Even in the structure where the {A} and {111} B crystal planes are formed, the {110} crystal plane can be used as a reflecting mirror.

Embodiment 3 Next, a case where a semiconductor quantum structure is formed by using the method of manufacturing a semiconductor crystal of the present invention will be described. In this case, as shown in FIGS. 4A and 4B, when the top is closed by a {110} crystal plane, a quantum well structure can be formed near the top of the pyramid.

That is, as shown in FIG. 1 and FIG.
2 on the above-mentioned growth conditions, that is, a growth temperature of 800 ° C. or more, V / I
The semiconductor 3 made of, for example, AlGaAs is crystal-grown by methyl MOCVD at an II ratio of 200 or more and a growth rate of 0.4 nm / s or less until the length of one side of the upper surface 4S of {100} crystal plane becomes about 100 nm. ,
Thereafter, as shown in FIGS. 4A and 4B, GaAs or the aforementioned AlGa
A conductive region 6 is formed by growing AlGaAs having a smaller Al content than As. Then, although not shown, a quantum dot (quantum box) is formed on the top of the quadrangular pyramid by growing AlGaAs having a higher Al content than the conductive region 6 over the entire surface under normal epitaxial growth conditions.
A structure can be formed.

In this case, in the aforementioned document by Fukui et al. (“Vacuum”, Vol. 34, No. 5, (1991), p. A triangular pyramid (tetrahedron) -like structure surrounded by {110} crystal planes is formed on a {111} B substrate by using the {100} substrate in the present invention as described above. Is different from this example.

In the present invention, FIGS.
As shown in the process diagram, the quantum structure 6 is formed on the top, and as in the example described in FIG.
A 1｝ B crystal plane is generated and GaAs
And the like, and a conductive region 6 such as {111} B
The semiconductor crystal structure can be formed by returning to the growth condition where the crystal plane disappears.

That is, as described above, when a semiconductor such as AlGaAs is grown while, for example, either the growth temperature or the growth rate is shifted from predetermined conditions, (1)
-11) B crystal plane and (11-1) B crystal plane can appear. One side of the {111} B crystal plane is about 100 nm as in the example of FIG. Next, under predetermined growth conditions, that is, in the case of a methyl-based material as described above, the growth temperature is 800 ° C. or more, the V / III ratio is 200 or more, and the growth rate is 0.
GaAs or the like is grown to 4 nm or less, and {111}
A triangular pyramid-shaped conductive region 6 composed of a {110} crystal plane is formed on the B crystal plane. At this time, conductive region 6 can also be formed at the top of a quadrangular pyramid structure surrounded by four {110} crystal planes.

Thereafter, by growing a semiconductor layer of AlGaAs or the like over the entire surface, a semiconductor quantum structure in which quantum dots are formed at three locations on the mesa portion 12 in this case can be obtained.

As described above, in the present invention, {111}
A semiconductor quantum structure can be easily formed using a normal {100} substrate without using a B substrate.

In each of the above embodiments, AlGa
An As-based semiconductor crystal structure was formed.
The present invention can be applied to the case where crystal planes of various compound semiconductors such as lGaAsP are manufactured, and it is needless to say that a reflector and a semiconductor quantum structure can be manufactured using the crystal planes.

Further, in each of the above-described examples, a planar square mesa portion is formed as a step. However, for example, a planar rectangular shape or a ridge (stripe) shape extending in the <001> direction may be used. Similarly, a {110} crystal plane extending from the edge can be formed, and the present invention can make various modifications and changes other than the above-described examples, for example, by making a semiconductor quantum wire structure using the crystal plane. It is.

[0047]

As described above, according to the present invention, the {110} crystal plane which forms an angle of 45 ° with the substrate can be formed without using a special substrate such as a {111} B substrate.
It can be formed using a substrate having a crystal plane as a main surface,
Therefore, the growth can be performed under relatively mild growth conditions.

Then, {110} which forms 45 ° with respect to the substrate.
By forming a reflecting mirror with a semiconductor crystal surface of a quadrangular pyramid surrounded by a crystal surface, a light beam in a direction parallel to the substrate can be converted to a direction perpendicular to the substrate by the reflecting mirror. Can be obtained at the same time, so that the design can be made flexible with respect to one or a plurality of light beams.

By appropriately selecting the size of the quadrangular pyramid, the interval between the light beams can be narrowed. For example, in the case of an optical disk device or a magneto-optical disk device, a plurality of light beams When using
The configuration of the apparatus can be improved, for example, the distance between the beams can be made close enough to be focused by one optical system.

Further, according to the present invention, a semiconductor quantum structure such as a quantum box or a quantum wire can be easily obtained using a {100} substrate, and a semiconductor quantum structure with good controllability and good reproducibility can be manufactured.

[Brief description of the drawings]

FIG. 1 is a process chart of an example of a method for manufacturing a semiconductor crystal plane.

FIG. 2 is a manufacturing process diagram of an example of a reflecting mirror.

FIG. 3 is a schematic perspective view of an example of a reflecting mirror.

FIG. 4 is a schematic plan view and a schematic perspective view of a semiconductor crystal plane.

FIG. 5 is a schematic perspective view of a semiconductor crystal plane.

FIG. 6 is a schematic perspective view of a semiconductor crystal plane.

FIG. 7 is a schematic plan view of a semiconductor crystal plane.

FIG. 8 is a schematic perspective view of a semiconductor crystal plane.

FIG. 9 is a schematic perspective view of a semiconductor crystal plane.

FIG. 10 is a manufacturing process diagram of a semiconductor crystal plane.

FIG. 11 is a manufacturing process diagram of an example of a semiconductor quantum structure.

[Explanation of symbols]

 2 step 3 semiconductor 4 reflector 6 conductive area 12 mesa

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-2-137316 (JP, A) JP-A-2-1633928 (JP, A) JP-A-2-165679 (JP, A) JP-A-3- 219623 (JP, A) JP-A-4-118916 (JP, A) JP-A-5-3375 (JP, A) JP-A-5-299636 (JP, A) (58) Fields investigated (Int. ⁷ , DB name) H01L 21/205 H01L 29/04 H01S 5/34

Claims (5)

(57) [Claims] 1. A step is formed on a semiconductor substrate having a {100} crystal plane as a principal plane, the step being a {010} crystal plane and a plane surrounded by the side plane being a plane parallel to the principal plane. Extending from a portion corresponding to the edge of the step by growing a semiconductor on the semiconductor substrate having the step by vapor phase growth.
A method for producing a semiconductor crystal plane, comprising: producing a 0 crystal plane, and producing a semiconductor crystal plane having an angle of 45 ° with respect to the main surface with the {110} crystal plane as a constituent plane. 2. A growth inhibition layer having an edge extending in a <001> crystal axis direction is formed on a semiconductor substrate having a {100} crystal plane as a main surface, and a semiconductor is formed on the semiconductor substrate on which the growth inhibition layer is formed. Is vapor-phase grown to generate a {110} crystal plane extending from a portion corresponding to the edge on a portion of the semiconductor substrate where the growth inhibition layer is not formed,
A method for producing a semiconductor crystal plane, characterized by producing a semiconductor crystal plane having a 0 ° crystal plane as a constituent plane and having an angle of 45 ° with respect to the main surface. 3. Reflecting light traveling parallel to the main surface in a direction substantially perpendicular to the main surface, or reflecting light incident perpendicular to the main surface in a direction substantially parallel to the main surface. 3. A reflecting mirror comprising a semiconductor crystal surface, which is produced by the method for producing a semiconductor crystal surface according to claim 1 or 2, which reflects light in a direction. 4. On a semiconductor substrate having a (100) crystal plane as a main surface, side surfaces are (010), (001), and (0-1).
0) and (00-1) a mesa portion having a crystal plane and an upper surface formed of a plane parallel to the main surface, and a semiconductor is vapor-phase grown on a semiconductor substrate having the mesa portion to form the mesa. (110), (10) extending from a portion corresponding to the edge of the portion
1), (1-10), and (10-1) each of which has a crystal plane formed thereon to form a reflecting mirror. Each of the reflecting mirrors transmits light traveling parallel to the main surface substantially to the main surface. A reflecting mirror comprising a semiconductor crystal surface, wherein the reflecting mirror reflects light in a direction perpendicular to the principal surface or in a direction substantially parallel to the principal surface. 5. On a semiconductor substrate having a (100) crystal plane as a main surface, side surfaces (010), (001), and (0-1) are formed.
0), (00-1) A mesa portion composed of crystal planes and surrounded by these crystal planes is formed of a plane parallel to the main surface, and a semiconductor is vapor-phased on a semiconductor substrate having the mesa portion. Grown from the portion corresponding to the edge of the mesa portion (11
0), (101), (1-10) and (10-1) crystal planes are formed, and these (110), (101) and (1-
10), (10-1) wherein a quantum region is formed by confining electrons in the conductive region in a region surrounded by at least two crystal planes of each of the crystal planes. Semiconductor quantum structure.