JP3123260B2 - Method for producing transparent conductive film - Google Patents
Method for producing transparent conductive filmInfo
- Publication number
- JP3123260B2 JP3123260B2 JP04294810A JP29481092A JP3123260B2 JP 3123260 B2 JP3123260 B2 JP 3123260B2 JP 04294810 A JP04294810 A JP 04294810A JP 29481092 A JP29481092 A JP 29481092A JP 3123260 B2 JP3123260 B2 JP 3123260B2
- Authority
- JP
- Japan
- Prior art keywords
- vaporization chamber
- conductive film
- inlet
- transparent conductive
- nitric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【０００１】[0001]
【産業上の利用分野】本発明は透明性が良く面積抵抗値
の低い酸化錫系の透明導電膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a tin oxide-based transparent conductive film having good transparency and low sheet resistance.
【０００２】[0002]
【従来の技術】従来この種の製造方法としては有機フッ
素ドーパント、有機錫化合物または四塩化錫を含有する
液体をキァリアガス中に蒸発させて蒸気化合物を形成
し、その蒸気を基材上で分解させるものであつた（例え
ば特開昭６２−１２４２７６号公報）。2. Description of the Related Art Conventionally, as a production method of this kind, a liquid containing an organic fluorine dopant, an organic tin compound or tin tetrachloride is evaporated into a carrier gas to form a vapor compound, and the vapor is decomposed on a substrate. (For example, Japanese Patent Application Laid-Open No. 62-124276).
【０００３】[0003]
【発明が解決しようとする課題】しかし上記従来の製造
方法では透明性が良く、面積抵抗値が２５Ω／□以下
（膜厚が６００ｎｍにおいて）の導電膜が得られないと
いう問題があった。However, the conventional manufacturing method described above has a problem that a conductive film having good transparency and a sheet resistance of 25 Ω / □ or less (at a film thickness of 600 nm) cannot be obtained.
【０００４】本発明は上記の従来の問題を解決するもの
で、透明性が良く面積抵抗値の低い酸化錫系の透明導電
膜の製造方法の提供を目的とする。An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide a method for producing a tin oxide-based transparent conductive film having good transparency and low sheet resistance.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めの本発明の透明導電膜の製造方法は、塩化錫と濃硝酸
のアルコール溶液を加熱された気化室の一方の入口から
導入し、キァリアガスを気化室の他方の入口から導入し
て気化反応物を製造し、その気化反応物を気化室の出口
から送りだして加熱された基板の表面に送給する。In order to achieve the above object, a method for producing a transparent conductive film according to the present invention comprises tin chloride and concentrated nitric acid.
The alcohol solution is introduced from one inlet of the heated vaporization chamber, and a carrier gas is introduced from the other inlet of the vaporization chamber to produce a vaporized reactant.The vaporized reactant is sent out from the vaporized chamber outlet and heated. To the surface of the substrate.
【０００６】[0006]
【作用】本発明によれば、原料に塩化錫と濃硝酸のアル
コール溶液を用いて常圧化学蒸着法で製造するために従
来より結晶性の良い酸化膜が形成される。According to the present invention, an oxide film having better crystallinity is formed since it is produced by an atmospheric pressure chemical vapor deposition method using an alcohol solution of tin chloride and concentrated nitric acid as a raw material.
【０００７】[0007]
【実施例】以下本発明の実施例について図面を参照しな
がら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【０００８】（実施例１）図１は本発明の透明導電膜の
製造方法に用いられた製造装置の断面図である。(Embodiment 1) FIG. 1 is a sectional view of a manufacturing apparatus used in a method for manufacturing a transparent conductive film of the present invention.
【０００９】同図において１は気化室であり、その気化
室１はヒータ２によって２５０〜６００℃に加熱され
る。３は透明導電膜が形成される基板であり、基板３は
ヒータ４によって３５０〜６００℃に加熱される。５は
塩化錫のアルコール溶液を導入する一方の入口であり、
６はキァリアガスを導入する他方の入口であり、７は気
化室１内で製造された気化反応物を送り出す出口であ
る。一方の入口５の内径を５ｍｍ、他方の入口６の内径
を１０ｍｍ、出口７の内径を２０ｍｍとし、気化室１の
内容積を１ｌｉｔ．にすると、塩化錫のアルコール溶液
供給液量は０．１〜１０ｇ／ｍｉｎ．、キァリアガスの
供給量は１〜２０ｌｉｔ．／ｍｉｎ．程度である。キァ
リアガスは空気でも良いが、特に面積抵抗値および透明
度を精密に制御する場合には窒素と酸素の体積比を９：
１〜７：３、望ましくは２１：４とする。In FIG. 1, reference numeral 1 denotes a vaporization chamber, and the vaporization chamber 1 is heated to 250 to 600 ° C. by a heater 2. Reference numeral 3 denotes a substrate on which a transparent conductive film is formed, and the substrate 3 is heated to 350 to 600 ° C. by a heater 4. 5 is one inlet for introducing an alcoholic solution of tin chloride,
Reference numeral 6 denotes the other inlet for introducing the carrier gas, and reference numeral 7 denotes an outlet for sending out the vaporized reactant produced in the vaporization chamber 1. The inside diameter of one inlet 5 is 5 mm, the inside diameter of the other inlet 6 is 10 mm, the inside diameter of the outlet 7 is 20 mm, and the internal volume of the vaporization chamber 1 is 1 liter. , The supply amount of the alcohol solution of tin chloride is 0.1 to 10 g / min. And the carrier gas supply amount is 1 to 20 lit. / Min. It is about. The carrier gas may be air, but when the sheet resistance and the transparency are precisely controlled, the volume ratio of nitrogen and oxygen is preferably 9: 9.
1 to 7: 3, preferably 21: 4.
【００１０】図２は基板３の上に透明導電膜８を形成し
たものの断面図である。本実施例においては無水塩化第
一錫（ＳｎＣｌ2）３０ｗｔ％のメチルアルコール７
０．０ｗｔ％の溶液を４００℃に加熱された気化室１内
に一方の入口５から１ｇ／ｍｉｎ．で供給し、キァリア
ガスとして空気を他方の入口６から１０ｌｉｔ．／ｍｉ
ｎ．で供給し、５００℃に加熱されたガラス基板３の上
に１０分間気化反応物を送給すると膜厚が６００ｎｍで
面積抵抗値が８Ω／□、波長が５５０ｎｍの光線の透過
率が８２％の酸化錫（ＳｎＯ2-x ）の透明導電膜８が得
られた。従来例の厚さ１００ｎｍ当たりの面積抵抗値は
５２．５Ω／□であるのに対して、本実施例では４８Ω
／□と従来例の９０％となった。FIG. 2 is a sectional view of a structure in which a transparent conductive film 8 is formed on the substrate 3. In this embodiment, 30% by weight of anhydrous stannous chloride (SnCl 2 ) methyl alcohol 7
0.0 g% solution was introduced into the vaporization chamber 1 heated to 400 ° C. from one inlet 5 at 1 g / min. And 10 liters of air as carrier gas from the other inlet 6. / Mi
n. When the vaporized reactant is fed onto the glass substrate 3 heated to 500 ° C. for 10 minutes, the thickness of the film is 600 nm, the sheet resistance is 8 Ω / □, and the transmittance of light having a wavelength of 550 nm is 82%. A transparent conductive film 8 of tin oxide (SnO 2-x ) was obtained. While the sheet resistance per 100 nm thickness of the conventional example is 52.5 Ω / □, in the present embodiment, it is 48 Ω / □.
/ □, which is 90% of the conventional example.
【００１１】本実施例ではＳｎＣｌ2 の量を２０．０〜
４５．０ｗｔ％、メチルアルコールの量を５５．０〜８
０．０ｗｔ％としてもほぼ同様の効果が得られた。In this embodiment, the amount of SnCl 2 is 20.0 to
45.0 wt%, the amount of methyl alcohol is 55.0-8.
Almost the same effect was obtained when the content was 0.0 wt%.
【００１２】（実施例２）次に本発明の第２の実施例に
ついて説明する。(Embodiment 2) Next, a second embodiment of the present invention will be described.
【００１３】本実施例が第１の実施例と相違する点は、
無水塩化第一錫３０．０ｗｔ％と比重１．３８の濃硝酸
５．０ｗｔ％のメチルアルコール６５．０ｗｔ％の溶液
を用いた点である。本実施例の酸化錫の透明導電膜の面
積抵抗値は５Ω／□、波長が５５０ｎｍの光線の透過率
は８２％、厚さ１００ｎｍ当たりの面積抵抗値は３０Ω
／□であり、従来例の５７％となった。This embodiment is different from the first embodiment in that:
The point is that a solution of 35.0 wt% of anhydrous stannous chloride and 5.0 wt% of concentrated nitric acid having a specific gravity of 1.38 and 65.0 wt% of methyl alcohol was used. The sheet resistance of the transparent conductive film of tin oxide of this example is 5Ω / □, the transmittance of light having a wavelength of 550 nm is 82%, and the sheet resistance per 100 nm thickness is 30Ω.
/ □, which is 57% of the conventional example.
【００１４】本実施例では無水塩化第一錫の量を２０．
０〜４５．０ｗｔ％、濃硝酸の量を０．５〜１５．０ｗ
ｔ％、メチルアルコールの量を５５．０〜８０．０ｗｔ
％としてもほぼ同様な効果が得られた。塩化錫のアルコ
ール溶液に濃硝酸を添加すると面積抵抗値が低下すると
ともに、膜が白濁しにくくなるという効果が得られた。 （実施例３）次に本発明の第３の実施例について説明す
る。In this embodiment, the amount of anhydrous stannous chloride is set to 20.
0-45.0 wt%, the amount of concentrated nitric acid is 0.5-15.0 w
t%, the amount of methyl alcohol is 55.0-80.0 wt
Almost the same effect was obtained by setting the percentage. When concentrated nitric acid was added to the alcohol solution of tin chloride, the effect of decreasing the sheet resistance and the effect of making the film less turbid was obtained. (Embodiment 3) Next, a third embodiment of the present invention will be described.
【００１５】本実施例が第２の実施例と相違する点は、
濃硝酸の一部を硝酸亜鉛で置換し、無水塩化第一錫３
０．０ｗｔ％と比重１．３８の濃硝酸３．０ｗｔ％と硝
酸亜鉛２．０ｗｔ％のメチルアルコール６５．０ｗｔ％
の溶液を用いた点である。This embodiment is different from the second embodiment in that
Part of concentrated nitric acid is replaced with zinc nitrate, and anhydrous stannous chloride 3
3.0 wt% of concentrated nitric acid having a specific gravity of 1.38 and 0.0 wt% and methyl alcohol 65.0 wt% of zinc nitrate 2.0 wt%
This is the point using the solution of Example 1.
【００１６】本実施例の酸化錫の透明導電膜の面積抵抗
値は７Ω／□、波長が５５０ｎｍの光線の透過率は８３
％、厚さ１００ｎｍ当たりの面積抵抗値は４２Ω／□で
あり、従来例の８０％となった。The tin oxide transparent conductive film of this embodiment has a sheet resistance of 7 Ω / □ and a transmittance of light having a wavelength of 550 nm of 83.
%, And the sheet resistance per 100 nm thickness was 42 Ω / □, which was 80% of the conventional example.
【００１７】本実施例では無水塩化第一錫の量を２０．
０〜４５．０ｗｔ％、濃硝酸の量を０．５〜１４．９ｗ
ｔ％、硝酸亜鉛の量を０．１〜２．０ｗｔ％、メチルア
ルコールの量を５５．０〜８０．０ｗｔ％としてもほぼ
同様な効果が得られた。 （実施例４）次に本発明の第４の実施例について説明す
る。In this embodiment, the amount of anhydrous stannous chloride is 20.
0-45.0 wt%, the amount of concentrated nitric acid is 0.5-14.9 w
Almost the same effects were obtained when the amount of t%, the amount of zinc nitrate was 0.1 to 2.0 wt%, and the amount of methyl alcohol was 55.0 to 80.0 wt%. (Embodiment 4) Next, a fourth embodiment of the present invention will be described.
【００１８】本実施例が第２の実施例と相違する点は濃
硝酸の一部をチタニウムテトラブトキシドで置換し、無
水塩化第一錫３０．０ｗｔ％と比重１．３８の濃硝酸
２．０ｗｔ％とチタニウムテトラブトキシド１．５ｗｔ
％のメチルアルコール６６．５ｗｔ％の溶液を用いた点
である。本実施例の酸化錫の透明導電膜の面積抵抗値は
６Ω／□、波長が５５０ｎｍの光線の透過率は８２％、
厚さ１００ｎｍ当たりの面積抵抗値は３６Ω／□であ
り、従来例の６８％となった。This embodiment is different from the second embodiment in that a part of concentrated nitric acid is replaced by titanium tetrabutoxide, 30.0 wt% of anhydrous stannous chloride and 2.0 wt% of concentrated nitric acid having a specific gravity of 1.38. % And titanium tetrabutoxide 1.5wt
% Of methyl alcohol 66.5 wt%. The transparent conductive film of tin oxide of this example has a sheet resistance of 6Ω / □, a transmittance of light having a wavelength of 550 nm of 82%,
The sheet resistance per 100 nm thickness was 36Ω / □, which was 68% of the conventional example.
【００１９】本実施例では無水塩化第一錫の量を２０．
０〜４５．０ｗｔ％、濃硝酸の量を０．５〜４．０ｗｔ
％、チタニウムテトラブトキシドの量を０．１〜３．０
ｗｔ％、メチルアルコールの量を５５．０〜８０．０ｗ
ｔ％としてもほぼ同様な効果が得られた。 （実施例５）次に本発明の第５の実施例について説明す
る。本実施例が第２の実施例と相違する点は濃硝酸の一
部を酢酸で置換し、無水塩化第一錫３０．０ｗｔ％、比
重１．３８の濃硝酸３．０ｗｔ％、酢酸６．０ｗｔ％の
メチルアルコール６１．０ｗｔ％の溶液を用いた点であ
る。本実施例の酸化錫の透明導電膜の面積抵抗値は８Ω
／□、波長が５５０ｎｍの光線の透過率は８３％、厚さ
１００ｎｍ当たりの面積抵抗値は４８Ω／□であり、従
来例の９０％となった。濃硝酸の一部を酢酸で置換する
と膜が白濁しにくくなるという効果が得られた。In this embodiment, the amount of anhydrous stannous chloride is set to 20.
0-45.0 wt%, the amount of concentrated nitric acid is 0.5-4.0 wt%
%, The amount of titanium tetrabutoxide is 0.1 to 3.0.
wt%, the amount of methyl alcohol is 55.0-80.0 w
Almost the same effect was obtained when t% was used. (Embodiment 5) Next, a fifth embodiment of the present invention will be described. This embodiment is different from the second embodiment in that a part of concentrated nitric acid is replaced by acetic acid, 30.0 wt% of anhydrous stannous chloride, 3.0 wt% of concentrated nitric acid having a specific gravity of 1.38, and acetic acid 6. The point is that a solution of 0 wt% methyl alcohol 61.0 wt% was used. The sheet resistance of the transparent conductive film of tin oxide of this embodiment is 8Ω.
/ □, the transmittance of a light beam having a wavelength of 550 nm is 83%, and the sheet resistance per 100 nm thickness is 48Ω / □, which is 90% of the conventional example. When part of the concentrated nitric acid was replaced with acetic acid, an effect was obtained that the film was less likely to become cloudy.
【００２０】本実施例では無水塩化第一錫の量を２０．
０〜４５．０ｗｔ％、濃硝酸の量を０．５〜１４．５ｗ
ｔ％、酢酸の量を０．１〜２．０ｗｔ％、メチルアルコ
ールの量を５５．０〜８０．０ｗｔ％としてもほぼ同様
な効果が得られた。In this embodiment, the amount of anhydrous stannous chloride is set to 20.
0-45.0 wt%, the amount of concentrated nitric acid is 0.5-14.5 w
Almost the same effects were obtained when the amount of t%, the amount of acetic acid was 0.1 to 2.0 wt%, and the amount of methyl alcohol was 55.0 to 80.0 wt%.
【００２１】（実施例６）次に本発明の第６の実施例に
ついて説明する。(Embodiment 6) Next, a sixth embodiment of the present invention will be described.
【００２２】本実施例が第１の実施例と相違する点は、
無水塩化第一錫３０．０ｗｔ％と三塩化アンチモン０．
８０ｗｔ％のメチルアルコール６９．２ｗｔ％の溶液を
用いた点である。本実施例の酸化錫系の透明導電膜の面
積抵抗値は７．５Ω／□、波長が５５０ｎｍの光線の透
過率は８０％、厚さ１００ｎｍ当たりの面積抵抗値は４
５Ω／□であり、従来例の８５％となった。This embodiment is different from the first embodiment in that
30.0% by weight of anhydrous stannous chloride and 0.1% of antimony trichloride.
The point is that a solution of 80 wt% methyl alcohol 69.2 wt% was used. The sheet resistance of the tin oxide-based transparent conductive film of this example is 7.5 Ω / □, the transmittance of light having a wavelength of 550 nm is 80%, and the sheet resistance per 100 nm thickness is 4
5Ω / □, which is 85% of the conventional example.
【００２３】本実施例では無水塩化第一錫の量を２０．
０〜４４．９ｗｔ％、三塩化アンチモンの量を０．１〜
１．５ｗｔ％、メチルアルコールの量を５５．０〜８
０．０ｗｔ％にしてもほぼ同様な効果が得られた。三塩
化アンチモンの量は増加すると光線の透過率が低下する
ので限度がある。In this embodiment, the amount of anhydrous stannous chloride is 20.
0-44.9 wt%, the amount of antimony trichloride is 0.1-
1.5 wt%, the amount of methyl alcohol is 55.0-8
Almost the same effect was obtained even with 0.0 wt%. Increasing the amount of antimony trichloride has a limit because light transmittance decreases.
【００２４】（実施例７）次に本発明の第７の実施例に
ついて説明する。(Embodiment 7) Next, a seventh embodiment of the present invention will be described.
【００２５】本実施例が第２の実施例と相違する点は無
水塩化第一錫２９．２ｗｔ％と三塩化アンチモン０．８
ｗｔ％と比重１．３８の濃硝酸５．０ｗｔ％のメチルア
ルコール６５．０ｗｔ％溶液を用いた点である。This embodiment is different from the second embodiment in that 29.2% by weight of anhydrous stannous chloride and 0.8 of antimony trichloride are used.
The point is that a solution of 65.0 wt% of methyl alcohol containing 5.0 wt% of concentrated nitric acid having a specific weight of 1.38 and a specific gravity of 1.38 was used.
【００２６】本実施例の酸化錫系の透明導電膜の面積抵
抗値は４．８Ω／□、波長が５５０ｎｍの光線の透過率
は７７％、厚さ１００ｎｍ当たりの面積抵抗値は２８．
８Ω／□であり、従来例の５５％となった。The tin oxide transparent conductive film of this embodiment has a sheet resistance of 4.8 Ω / □, a transmittance of light having a wavelength of 550 nm of 77%, and a sheet resistance per 100 nm thickness of 28.
8Ω / □, which is 55% of the conventional example.
【００２７】本実施例では無水塩化第一錫の量を２０．
０〜４４．９ｗｔ％、三塩化アンチモンの量を０．１〜
１．５ｗｔ％、濃硝酸の量を０．５〜１５．０ｗｔ％、
メチルアルコールの量を５５．０〜８０．０ｗｔ％とし
てもほぼ同様な効果が得られた。In this embodiment, the amount of anhydrous stannous chloride is set to 20.
0-44.9 wt%, the amount of antimony trichloride is 0.1-
1.5 wt%, the amount of concentrated nitric acid is 0.5 to 15.0 wt%,
Almost the same effect was obtained even when the amount of methyl alcohol was 55.0 to 80.0 wt%.
【００２８】（実施例８）次に本発明の第８の実施例に
ついて説明する。Embodiment 8 Next, an eighth embodiment of the present invention will be described.
【００２９】本実施例が第３の実施例と相違する点は、
無水塩化第一錫２９．２ｗｔ％と三塩化アンチモン０．
８ｗｔ％と比重１．３８の濃硝酸３．０ｗｔ％と硝酸亜
鉛２．０ｗｔ％のメチルアルコール６５．０ｗｔ％の溶
液を用いた点である。This embodiment is different from the third embodiment in that:
29.2% by weight of anhydrous stannous chloride and 0.1% of antimony trichloride.
The point is that a solution of 3.0 wt% of concentrated nitric acid having a specific gravity of 8 wt% and 1.38 and a 65.0 wt% methyl alcohol solution containing 2.0 wt% of zinc nitrate was used.
【００３０】本実施例の酸化錫の透明導電膜の面積抵抗
値は６．３Ω／□、波長が５５０ｎｍの光の線透過率は
７８％、厚さ１００ｎｍ当たりの面積抵抗値は３７．８
Ω／□であり、従来例の７２％となった。The tin oxide transparent conductive film of this embodiment has a sheet resistance of 6.3 Ω / □, a linear transmittance of light having a wavelength of 550 nm of 78%, and a sheet resistance per 100 nm thickness of 37.8.
Ω / □, which is 72% of the conventional example.
【００３１】本実施例では無水塩化第一錫の量を２０．
０〜４４．９ｗｔ％、三塩化アンチモンの量を０．１〜
１．５ｗｔ％、濃硝酸の量を０．５〜１４．９ｗｔ％、
硝酸亜鉛の量を０．１〜２．０ｗｔ％、メチルアルコー
ルの量を５５．０〜８０．０ｗｔ％、としてもほぼ同様
な効果が得られた。In this embodiment, the amount of anhydrous stannous chloride is set to 20.
0-44.9 wt%, the amount of antimony trichloride is 0.1-
1.5 wt%, the amount of concentrated nitric acid is 0.5-14.9 wt%,
Almost the same effects were obtained when the amount of zinc nitrate was 0.1 to 2.0 wt% and the amount of methyl alcohol was 55.0 to 80.0 wt%.
【００３２】なお、実施例における塩化錫の原料として
は無水塩化第一錫について説明したが、ＳｎＣｌ4、Ｓ
ｎＣｌ4・ｎＨ2Ｏなどの塩化第二錫を用いても同様の効
果がえられる。In the examples, anhydrous stannous chloride was described as a raw material of tin chloride, but SnCl 4 , S
The same effect can be obtained by using stannic chloride such as nCl 4 .nH 2 O.
【００３３】[0033]
【発明の効果】以上のように本発明によれば、原料に塩
化錫と濃硝酸のアルコール溶液を用いて常圧化学蒸着法
で製造するために従来より結晶性が良く、面積抵抗値が
低く、透明性の良い導電膜が製造できる。As described above, according to the present invention, since it is manufactured by an atmospheric pressure chemical vapor deposition method using an alcohol solution of tin chloride and concentrated nitric acid as a raw material, the crystallinity is better than before and the sheet resistance is lower. Thus, a conductive film having good transparency can be manufactured.
【図１】本発明の実施例に用いた製造装置の断面図FIG. 1 is a sectional view of a manufacturing apparatus used in an embodiment of the present invention.
【図２】本発明の実施例における透明導電膜の断面図FIG. 2 is a cross-sectional view of a transparent conductive film according to an embodiment of the present invention.
１ 気化室 ３ 基板 ５ 一方の入口 ６ 他方の入口 ７ 出口 ８ 透明導電膜 DESCRIPTION OF SYMBOLS 1 Evaporation chamber 3 Substrate 5 One inlet 6 The other inlet 7 Outlet 8 Transparent conductive film
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 16/00 - 16/56 H01B 13/00 ＪＩＣＳＴファイル（ＪＯＩＳ)────────────────────────────────────────────────── ─── Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) C23C 16/00-16/56 H01B 13/00 JICST file (JOIS)
Claims (6)
れた気化室の一方の入口から導入し、キャリアガスを気
化室の他方の入口から導入して気化反応物を製造し、そ
の気化反応物を気化室の出口から送りだして加熱された
基板の表面に送給する透明導電膜の製造方法。An alcohol solution of tin chloride and concentrated nitric acid is introduced from one inlet of a heated vaporization chamber, and a carrier gas is introduced from the other inlet of the vaporization chamber to produce a vaporized reactant. A method for producing a transparent conductive film, in which an object is sent out from an outlet of a vaporization chamber and is sent to a surface of a heated substrate.
液を加熱された気化室の一方の入口から導入し、キャリ
アガスを気化室の他方の入口から導入して気化反応物を
製造し、その気化反応物を気化室の出口から送りだして
加熱された基板の表面に送給する透明導電膜の製造方
法。2. An alcohol solution of tin chloride, concentrated nitric acid and zinc nitrate is introduced from one inlet of a heated vaporization chamber, and a carrier gas is introduced from the other inlet of the vaporization chamber to produce a vaporized reactant. A method for producing a transparent conductive film, in which the vaporized reactant is sent out from an outlet of a vaporizing chamber and fed to the surface of a heated substrate.
シドのアルコール溶液を加熱された気化室の一方の入口
から導入し、キャリアガスを気化室の他方の入口から導
入て気化反応物を製造し、その気化反応物を気化室の出
口から送りだして加熱された基板の表面に送給する透明
導電膜の製造方法3. An alcohol solution of tin chloride, concentrated nitric acid and titanium tetrabutoxide is introduced from one inlet of a heated vaporization chamber, and a carrier gas is introduced from the other entrance of the vaporization chamber to produce a vaporized reactant. A method for producing a transparent conductive film, in which the vaporized reactant is sent out from the outlet of the vaporizing chamber and fed to the surface of the heated substrate
加熱された気化室の一方の入口から導入し、キャリアガ
スを気化室の他方の入口から導入して気化反応物を製造
し、その気化反応物を気化室の出口から送りだして加熱
された基板の表面に送給する透明導電膜の製造方法。4. An alcohol solution of tin chloride, concentrated nitric acid and acetic acid is introduced from one inlet of a heated vaporization chamber, and a carrier gas is introduced from the other inlet of the vaporization chamber to produce a vaporized reactant. A method for producing a transparent conductive film, wherein a vaporized reactant is sent out from an outlet of a vaporizing chamber and fed to a surface of a heated substrate.
ール溶液を加熱された気化室の一方の入口から導入し、
キャリアガスを気化室の他方の入口から導入して気化反
応物を製造し、その気化反応物を気化室の出口から送り
だして加熱された基板の表面に送給する透明導電膜の製
造方法。5. An alcohol solution of tin chloride, antimony chloride and concentrated nitric acid is introduced from one inlet of a heated vaporization chamber.
A method for producing a transparent conductive film, wherein a carrier gas is introduced from the other inlet of the vaporization chamber to produce a vaporized reactant, and the vaporized reactant is sent out from the exit of the vaporization chamber and fed to the surface of the heated substrate.
鉛のアルコール溶液を加熱された気化室の一方の入口か
ら導入し、キャリアガスを気化室の他方の入口から導入
して気化反応物を製造し、その気化反応物を気化室の出
口から送りだして加熱された基板の表面に送給する透明
導電膜の製造方法。6. An alcohol solution of tin chloride, antimony chloride, concentrated nitric acid and zinc nitrate is introduced from one inlet of a heated vaporization chamber, and a carrier gas is introduced from the other entrance of the vaporization chamber to convert the vaporized reactant. A method for producing a transparent conductive film, comprising producing the vaporized reactant from an outlet of a vaporization chamber and supplying the vaporized reactant to a heated surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04294810A JP3123260B2 (en) | 1992-11-04 | 1992-11-04 | Method for producing transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04294810A JP3123260B2 (en) | 1992-11-04 | 1992-11-04 | Method for producing transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06145988A JPH06145988A (en) | 1994-05-27 |
| JP3123260B2 true JP3123260B2 (en) | 2001-01-09 |
Family
ID=17812550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04294810A Expired - Fee Related JP3123260B2 (en) | 1992-11-04 | 1992-11-04 | Method for producing transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3123260B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1019911C2 (en) * | 2002-02-06 | 2003-08-07 | Tno | Method for producing a tin oxide coating. |
| JP2011210499A (en) * | 2010-03-29 | 2011-10-20 | Andes Denki Kk | Transparent conductive film and its manufacturing method |
-
1992
- 1992-11-04 JP JP04294810A patent/JP3123260B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06145988A (en) | 1994-05-27 |
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