JP3120536B2 - Semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superluminescent diode (SLD) used as a light source of a semiconductor light emitting device, for example, an optical fiber gyro which is one of optical measuring instruments.

[0002]

2. Description of the Related Art An optical fiber gyro is a type of optical gyro using the principle of detecting the rotational angular velocity by light (Sagnac effect), and constitutes a high-sensitivity interferometer having a sufficiently long optical path using an optical fiber. As a light source, a laser diode or an SLD, which is a semiconductor light emitting element, is usually used. In a laser diode having a long coherent length, a part thereof becomes backscattered light due to Rayleigh scattering in an optical fiber to generate phase noise. Therefore, although an SLD with a short coherent length is more desirable for a light source, a conventional SLD with a short coherent length and a sufficient light output with a low operating current is obtained.
Is not put into practical use, and a semiconductor laser is used.

Hereinafter, a conventional semiconductor light emitting device will be described. FIG. 12 is a perspective view of a main part of a conventional SLD. FIG.
As shown in FIG. 5, an n-type GaAs current blocking layer 13 and a p-type G having a ridge are formed on a p-type GaAs substrate 12.
a _0.5 Al _0.5 As layer 14, Ga _0.92 Al _0.08 As active layer, n-type Ga _0.5 Al _{0 .5} As layer 16 and the n-type Ga
An As current layer 17 is formed. Ohmic electrodes 18 and 19 are formed on the upper and lower surfaces of the SLD, and a low reflectance coating is applied to both end surfaces from which light is emitted. Generally, it is said that an SLD having a short coherent length is required to reduce the phase noise of an optical fiber gyro, and a high output is required to improve the rotational angular velocity detection sensitivity.

[0004]

However, in the above-mentioned conventional configuration, it is difficult to obtain a sufficiently low reflectance with sufficient reproducibility to suppress laser oscillation even if a low reflectance coating is applied to the end face of the SLD, and a low output is required. There is a problem that laser oscillation occurs at an optical level, high-power superluminescent light (hereinafter referred to as SL light) cannot be obtained, and an operating current increases due to loss of a waveguide due to light absorption of a current blocking layer. Was.

An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide an SLD capable of emitting high-output SL light with a low operating current.

[0006]

In order to achieve this object, a semiconductor light emitting device according to the present invention comprises a one-conductivity type Ga having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer. _{A 1-Y} Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
Ga _1-X Al X As active layer one end and device end face Ga _1-w Al formed between the a _w As layer, X, Y and Z
Have a relationship of Z>Y> X ≧ 0 among them, and have a relationship of Y ≧ W> X among X, Y and W.

[0007]

With this structure, SL light is generated in the Ga _1-x Al _x As active layer by the current injected from the stripe-shaped window of the Ga _1-z Al _z As layer, that is, the ridge. here,
The refractive index of the Ga _{1 -Z} Al _Z As layer is
Since it is smaller than the _1-Y Al _Y As layer, the SL light is effectively confined within the stripe by this difference in refractive index. Further, the band gap of Ga _1-Z Al Z As layer Ga _1-X Al X As
Since it is considerably larger than the forbidden band width of the active layer, the G
a _1-Z Al _Z As absorption by the layer is not, there is no increase in the operating current due to the loss of the waveguide. Ga _1-w Al _w formed between one end of the Ga _1-x Al _x As active layer and the end face of the device.
Since light propagates in the As layer while spreading, the amount of light reflected from the end face and returned to the Ga _1-x Al _x As active layer again decreases, and the reflectivity can be effectively reduced. Thus, laser oscillation can be easily suppressed and a high-output SLD can be obtained.

[0008]

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1A is a perspective view of a main part of an SLD according to an embodiment of the present invention, FIG. 1B is a partially cutaway view showing a cross section in the longitudinal direction of the SLD, and FIG.
It is a partial cut-out view showing a cross section of an end portion of D. As shown in these figures, the front side of the SLD (hereinafter abbreviated as the front side)
In this example, an n-type GaAs buffer layer 2, an n-type Ga _0.5 Al _0.5 As clad layer 3, a Ga-type
_There is a p-type Ga _0.5 Al _0.5 As clad layer 5 having a _0.92 Al _0.08 As active layer 4 and a ridge 5 a, and an n-type Ga _0.40 Al _0.60 As is provided in a region other than the ridge 5 a serving as a current channel for current confinement. The current block layer 6 is formed. 7 is a p-type GaAs protective layer and 8 is a p-type Ga
This is an As contact layer. A p-type Ga _0.55 Al _0.45 As window layer 9 is formed between the end of the active layer 4 and the element end face on the rear surface side (hereinafter abbreviated as “rear surface side”) of the SLD.

In the SLD thus formed, G
The light guided toward the rear surface side in the a _0.92 Al _0.08 As active layer 4 is radiated into the p-type Ga _0.55 Al _0.45 As window layer 9 and reaches the element end face. Spread when the light reflected by the element end face has come back to Ga _0.92 Al _{0. 08} As active layer 4 again, reflected by the breadth and device end face of the light when emitted from the Ga _0.92 Al _0.08 As active layer 4 The ratio of the effective coupling to the Ga _0.92 Al _0.08 As active layer 4 is extremely small. If the rear end facet is coated with a low reflectance, the amount of reflected light can be further reduced. Therefore, the waveguide end 4a shown in FIG.
Can be effectively reduced to 1% or less. As a result, it is possible to increase the threshold current value of the laser diode and obtain SL light with a wide spectral half width up to a high light output.

Further, as in this embodiment, p-type Ga _0.55 A
If an n-type Ga _0.40 Al _0.60 As current blocking layer 6 is formed in the portion where the l _0.45 As window layer 9 is formed, the current can be made non-injected, the reactive current can be eliminated, and the temperature near the end face due to Joule heat can be eliminated. The rise can be suppressed. Furthermore, p
Since the band _gap of the Ga _0.55 Al _0.45 AS window layer 9 of the type is larger than the Ga _0.92 Al _0.08 As active layer 4, heat generation due to light absorption can also be prevented.

Here, in order to obtain a stable single transverse mode,
AlA of n-type Ga _0.40 Al _0.60 As current blocking layer 6
The s mixed crystal ratio is set to A of the p-type Ga _0.5 Al _0.5 As clad layer 5.
It is set at least 10% higher than the lAs mixed crystal ratio. If the n-type Ga _0.40 Al _0.60 As current blocking layer 6 has an AlAs mixed crystal ratio of p-type Ga _0.5 Al _0.5 As clad layer 5 AlAs
When the mixed crystal ratio is almost the same, there is a decrease in the refractive index in the stripe due to the plasma effect, the waveguide becomes an anti-guide waveguide, and a single transverse mode cannot be obtained. N-type Ga
_When the AlAs mixed crystal ratio of the _0.40 Al _0.60 As current blocking layer 6 is lower than the AlAs mixed crystal ratio of the p-type Ga _0.5 Al _0.5 As clad layer 5, the transverse mode becomes completely unstable and the intended low operating current is obtained. Cannot be achieved. In this embodiment, the n-type Ga _0.40 Al _0.60 As current blocking layer 6
The p-type Ga _0.5 Al _0.5 As clad layer
Is 0.1 higher than the AlAs mixed crystal ratio and 0.6. In this structure, the current injected from the p-type GaAs contact layer 8 is confined in the ridge 5a,
Stimulated emission occurs in the Ga _0.92 Al _0.08 As active layer 4 below the ridge 5a. Here, n-type Ga _0.40 Al _0.60 As
Since the refractive index of the current blocking layer 6 is sufficiently smaller than the refractive index of the p-type Ga _0.5 Al _0.5 As clad layer 5 inside the current channel, the SL light is confined in the ridge 5a by this refractive index difference, and has a single transverse mode. Is obtained.

[0012] Since the bandgap of the n-type Ga _0.4 Al _0.6 As current blocking layer 6 is larger than the bandgap of the Ga _0.92 Al _{0. 08} As active layer 4, according to the current blocking layer as in the conventional structure There is no light absorption, the loss of the waveguide can be greatly reduced, and a low operating current can be achieved.

Next, an embodiment of the present invention will be described.
The fabrication process will be described. 2 (a) to 2 (c) show the present invention.
Perspective view of the first half of the SLD manufacturing process in one embodiment
FIGS. 3 (a) to 3 (c) show the process in the latter half of the manufacturing process of the SLD.
FIG. First, as shown in FIG.
MOCVD or MBE growth method on GaAs substrate 1
From the n-type GaAs buffer layer 2 (thickness: 0.5 μm).
m), n-type Ga _0.5Al_0.5As cladding layer 3 (thickness,
1 μm), Ga_0.92Al_0.08As active layer 4 (thickness, 0.
07 μm), p-type Ga_0.5Al_0.5As clad layer 5
(Thickness: 1 μm), p-type GaAs protective layer 7 (thickness,
0.2 μm). This protective layer 7 allows current to flow
p-type Ga_0.5Al_0.5Of the ridge 5a of the As clad layer 5
Necessary to protect the top from surface oxidation. Note that Ga_0.92
Al_0.08The conductivity type of the As active layer is specifically described.
But not p-type, n-type or AND
It may be soup.

Next, as shown in FIG. 2B, a dielectric film 10 such as a nitride film (silicon nitride, tungsten nitride, etc.) or a silicon oxide film is formed except for the rear surface side. Using the mask as a mask, etching is performed until the Ga _0.92 Al _0.08 As active layer 4 is removed to form a window portion.

Next, as shown in FIG. 2C, n-type Ga is deposited by MOCVD using the dielectric film 10 as a mask.
_{A 0.55} Al _0.45 As window layer 9 is selectively grown.

Next, as shown in FIG. 3A, a dielectric film 11 such as a nitride film (silicon nitride, tungsten nitride) or silicon oxide is formed in a stripe shape, and etching is performed using the dielectric film 11 as a mask. Then, a ridge 5a is formed. At this time, the width of the lower end of the ridge 5a serving as the stripe width is 2.5 μm, and the p-type Ga in the region other than the ridge 5a is formed.
The thickness (dp) of the _0.5 Al _0.5 As clad layer 5 is 0.15
μm. In this structure, since there is no light absorption loss by the n-type Ga _0.4 Al _0.6 As current blocking layer 6, the stripe width and the thickness are set to the stripe width (about 5 μm) and the thickness (dp = 0.3 μm) of the conventional structure. ), And the operating current can be reduced as compared with the conventional example shown in FIG.

Next, as shown in FIG.
1 as a mask and n-type Ga _0.35 A by MOCVD.
l _0.65 As current blocking layer 6 (thickness: 1 μm) is selectively formed. As for the current blocking layer 6, when the thickness of the current blocking layer 6 is small, light absorption of the laser beam occurs in the upper p-type GaAs contact layer 8, so that the current blocking layer 6 is 0.4
It is desirable that the thickness be at least μm.

Next, as shown in FIG.
1 is removed and then MOCVD or MBE growth
GaAs contact layer 8 is formed. Finally, the n-type GaAs substrate 1 and the p-type GaAs contact layer 8
An electrode is formed on each side.

The current of the SLD manufactured as described above-
The light output characteristics will be described. FIG. 4 is a current-light output characteristic diagram of the SLD in one embodiment of the present invention. The characteristics of the conventional SLD are also shown for comparison. As shown in FIG. 4, in the SLD of the present embodiment, the operating current value is significantly reduced because the loss of the waveguide is small. Specifically, in an SLD having an active region length of 300 μm,
The operating current required to emit mW SL light was reduced from 120 mA to 60 mA.

In this embodiment, if the n-type current blocking layer 6 is grown directly on the p-type cladding layer 5 at the time of the second crystal growth, the regrowth interface becomes a pn junction and a deep interface state is formed. This may affect the temperature dependence of the current-light output characteristics of the SLD, resulting in a problem that the characteristic temperature is lowered. In order to prevent this, it is effective to first form a p-type thin layer and then form an n-type current blocking layer during the second crystal growth. in this case,
Since the regrowth interface is no longer a pn junction, the formation of deep interface states is also eliminated.

Next, another embodiment of the SLD according to the present invention will be described with reference to FIGS. These figures are all sectional views as viewed from the front side.

FIG. 5 shows an SL according to the second embodiment of the present invention.
D is a cross-sectional view showing an example in which a p-type Ga _0.4 Al _0.6 As layer 20 is formed at the time of the second growth. Since the p-type Ga _0.4 Al _0.6 As layer 20 needs to have an AlAs mixed crystal ratio that is transparent to SL light, Ga _0.92 Al _0.08 As
The thickness of the active layer 4 is set to 0.1 μm or less so as to be larger than the AlAs mixed crystal ratio and to reduce the leakage current in the lateral direction. In this embodiment, the p-type Ga _0.4 Al _0.6 As
In order to make the refractive index the same as when there is no layer 20, a p-type G
The AlAs mixed crystal ratio of the a _0.4 Al _0.6 As layer 20 is changed to n-type Ga
The AlAs mixed crystal ratio of the _0.35 Al _0.65 As current blocking layer 6 is the same as that of the current blocking layer 6, and the film thickness is set to 0.01 μm so that the current distribution is hardly affected. Thus, an SLD having a low operating current and excellent temperature characteristics can be obtained.
In the manufacturing process shown in FIG. 3, the dielectric film 11, for example, n-type Ga _0.35 formed by using the second growth etchant HF system during the time of the silicon nitride film to be removed
The Al _0.65 As current blocking layer 6 may be etched at the same time. In order to prevent this, it is effective to introduce a layer whose AlAs mixed crystal ratio is so low that it is not etched on the n-type Ga _0.35 Al _0.65 As current blocking layer 6 during the second growth. This layer is made of n-type G having a high AlAs mixed crystal ratio.
a _0.35 Al _0.65 As It also has the effect of protecting the current blocking layer 6 from surface oxidation. The configuration on the rear side of the SLD, that is, on the window layer 9 side is the same as that in FIG.

FIG. 6 shows an SL according to a third embodiment of the present invention.
D is a cross-sectional view of FIG.
The example shown in FIG. Note that n-type Ga
The thickness of the _0.35 Al _0.65 As current blocking layer 6 is 0.5 μm, which is smaller than that of the embodiment shown in FIG. It is preferable that the n-type GaAs layer 21 is n-type in terms of current blocking, but n-type Ga _0.35 Al
_When the thickness of the _0.65 As current blocking layer 6 is 0.4 μm or more, the current is blocked there, so that it may be a p-type or a high resistance layer. It may be a multilayer of two or more layers. With the structure of this embodiment, an SLD with low operating current, low noise, and excellent mass productivity can be stably manufactured.

FIG. 7 shows an SL according to a fourth embodiment of the present invention.
D is a cross-sectional view showing an example of a LOC structure having a light guide layer. Reference _numeral 22 denotes a p-type Ga _0.6 Al _0.4 As light guide layer. By adopting such a structure, the level of destruction due to light on the end face can be improved, and higher output can be achieved. The p-type Ga _0.6 Al _0.4 As light guide layer 22 has an AlAs mixed crystal ratio of Ga _0.92 Al _0.08 As active layer 4.
However, considering the temperature characteristics, it is desirable that the forbidden body width be larger than the Ga _0.92 Al _0.08 As active layer 4 by 0.3 eV or more.
The AlAs mixed crystal ratio of Ga _0.6 Al _{0 .4} As optical guide layer 22 of the mold was 0.4. The layer thickness was reduced to 0.1 μm in order to reduce the leakage current in the lateral direction. The p-type Ga _0.6 Al _0.4 As light guide layer 22 has a Ga type as shown in FIG.
_0.92 Al _0.08 As may be provided on the lower side or both sides instead of the upper part. However, in this case, it is necessary to remove not only the active layer but also the light guide layer at the time of etching in FIG. According to the structure of this embodiment, a high-output SLD with a low operating current can be manufactured stably.
The structures and effects of FIGS. 5, 6, and 7 described above are independent from each other. By combining these structures, it is possible to obtain an excellent semiconductor light emitting element having the respective effects. . An embodiment having a structure based on these combinations will be described below.

FIG. 8 shows an SL according to a fifth embodiment of the present invention.
FIG. 6D is a cross-sectional view illustrating an example in which the structure of FIG. 5 and the structure of FIG. 6 are combined. According to the structure of this embodiment, it is possible to obtain an SLD having a low operating current, a high characteristic temperature, and excellent mass productivity.

FIG. 9 shows an SL according to a sixth embodiment of the present invention.
FIG. 6D is a cross-sectional view showing an example in which the structure of FIG. 5 and the structure of FIG. 7 are combined. Also in this case, the p-type Ga _0.6
Al _{0 .4} As optical guide layer 22 is not the top of the Ga _0.92 Al _0.08 As active layer 4, may be the bottom or sides.
According to the structure of this embodiment, an SLD having a high characteristic temperature and a high output can be obtained in addition to the low current operation.

FIG. 10 is a block diagram of a seventh embodiment of the present invention.
FIG. 7 is a cross-sectional view of the LD, showing an example in which the structure of FIG. 6 and the structure of FIG. 7 are combined. Also in this case, the p-type Ga
_{The 0.6} Al _0.4 As light guide layer 22 is Ga _0.92 Al _0.08 As
Instead of the upper part of the active layer 4, it may be on the lower part or on both sides. According to the structure of this embodiment, it is possible to obtain an SLD having higher output and excellent mass productivity in addition to a low operating current.

FIG. 11 is a block diagram of an eighth embodiment of the present invention.
FIG. 6 is a cross-sectional view of the LD, showing an example in which the structure of FIG. 5, the structure of FIG. 6, and the structure of FIG. 7 are combined. Again,
The p-type Ga _0.6 Al _0.4 As light guide layer 22 is Ga _0.92 A
l _0.08 As may be on the lower side or on both sides instead of the upper side of the active layer 4. According to the structure of this embodiment, in addition to the low operating current, the SL having a high characteristic temperature, a higher output, and excellent mass productivity
D can be obtained.

In all of the above embodiments, the substrate is n
Although only the case where an n-type current blocking layer is used has been described, the same effect can be obtained by using a p-type current blocking layer as a substrate. The reason is that the AlAs mixed crystal ratio of the current blocking layer is high in all the examples. That is, in the case of the conventional GaAs current blocking layer, the diffusion length of electrons from the cladding layer into the p-type GaAs layer is 2.
-3 μm, which is longer than the thickness of the current block layer.
While it is difficult to realize a p-type block layer, in the case of a p-type GaAlAs layer having a high AlAs mixed crystal ratio as in the present invention, diffusion of electrons is suppressed, so that a p-type block layer can be realized. This is because

In all of the above embodiments, only the case where the ridge is on the active layer, that is, on the side opposite to the substrate when viewed from the active layer is shown. However, the same effect can be obtained even when the ridge is in the same direction as the substrate. can get. If the ridge has a double configuration structure in both directions of the active layer, it is needless to say that the leakage current is further reduced and the operating current can be reduced.

[0031]

As described above, according to the present invention, Ga _1-x Al _x A
a Ga _1-Y Al _Y As layer of the one conductivity type having a ridge formed on at least one surface of the s active layer, of the opposite conductivity type formed along a longitudinal side of the ridge Ga _1-Z Al _Z A
comprising a s layer, a Ga _1-X Al X As active layer one end and device end face Ga _1-w Al w As layer formed between the, X, Y
And Z have a relationship of Z>Y> X ≧ 0 and X, Y and W have a relationship of Y ≧ W> X, so that a high output and an operating current value can be obtained. An excellent semiconductor light emitting device (SLD), which is significantly lower than in the past, can be realized.

That is, since the AlAs mixed crystal ratio of the current blocking layer is set higher than the AlAs mixed crystal ratio of the cladding layer, light is emitted in a single transverse mode, and there is no light absorption of the SL light by the current blocking layer. In addition, the loss of the waveguide and the operating current value can be reduced, and a high output can be obtained due to the effect of reducing the reflectance by utilizing the diffusion of light in the window layer.

By using such a semiconductor light emitting device, an excellent optical fiber gyro can be realized.

[Brief description of the drawings]

FIG. 1A is a perspective view of a main part of an SLD according to an embodiment of the present invention, FIG. 1B is a partial cutaway view showing a cross section in the length direction of the SLD, and FIG. Partial cutout diagram shown

FIGS. 2A to 2C show S in one embodiment of the present invention.
Process perspective view of first half of LD manufacturing process

3 (a) to 3 (c) are perspective views of the latter half of the SLD manufacturing process.

FIG. 4 is a current-light output characteristic diagram of an SLD according to an embodiment of the present invention.

FIG. 5 is a sectional view of an SLD according to a second embodiment of the present invention.

FIG. 6 is a sectional view of an SLD according to a third embodiment of the present invention.

FIG. 7 is a sectional view of an SLD according to a fourth embodiment of the present invention.

FIG. 8 is a sectional view of an SLD according to a fifth embodiment of the present invention.

FIG. 9 is a sectional view of an SLD according to a sixth embodiment of the present invention.

FIG. 10 is a sectional view of an SLD according to a seventh embodiment of the present invention.

FIG. 11 is a sectional view of an SLD according to an eighth embodiment of the present invention.

FIG. 12 is a perspective view of a main part of a conventional SLD.

[Explanation of symbols]

4 Ga _0.92 Al _0.08 As active layer 5 p-type Ga _0.5 Al _0.5 As clad layer (one-conductivity-type Ga _1-Y Al _Y As layer) 5 a ridge 6 n-type Ga _0.40 Al _0.60 As current blocking layer (reverse conductive) Ga _1-Z Al _Z As layer) 9 p-type Ga _0.55 Al _0.45 As window layer (Ga
_1-w Al _w As layer)

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-226977 (JP, A) JP-A-63-142692 (JP, A) Applied Physics Letters 51 [23] (1987) p. 1879-1881 (58) Fields surveyed (Int. Cl. ⁷ , DB name) H01L 33/00 H01S 5/00-5/50 JICST file (JOIS)

Claims (8)

(57) [Claims] 1. One conductivity type Ga _{1 -Y} having a ridge formed on at least one surface of a Ga _{1 -X} Al _X As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-X Al _X As active Ga formed between the end and the device end face of one of the layers _1-w Al _w a As layer, X, Z between the Y and Z>Y> X ≧ 0 Relationship And a semiconductor light emitting element having a relationship of Y ≧ W> X among X, Y and W. 2. A one-conductivity-type Ga _1-Y having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-Y Al Y As layer and the Ga _1-Z Al Z As layer Ga layer thickness was formed following one conductivity type 0.1μm between _1-B Al B A
an s layer, and a Ga _1-w Al _w As layer formed between one end of the Ga _1-x Al _x As active layer and an element end face,
A semiconductor light emitting device having a relationship of Z>Y> X ≧ 0 and B> X among X, Y, Z and B, and a relationship of Y ≧ W> X among X, Y and W. 3. A one-conductivity-type Ga _1-Y having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-Z Al _Z As formed on said layer Ga _1-Z Al Z As layer and GaAlAs layer or GaAs layer AlAs mixed crystal ratio is formed of at least one layer lower than the Ga _1-X A
l _X As active Ga formed between the end and the device end face of one of the layers _1-w Al _w As and a layer, X, Z between the Y and Z
>Y> X ≧ 0, and Y ≧ X among X, Y and W
A semiconductor light emitting device having a relationship of W> X. 4. A one-conductivity-type Ga _1-Y having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-X Al X As active layer formed in contact with Ga _1-C Al C A
s layer, the Ga _1-x Al _x As active layer and the Ga
_1-C Al C As layer one and a end and a device end face Ga _1-w Al w As layer formed between the, X, Y, Z between the Z and C>Y>C> X ≧ A semiconductor light emitting device having a relationship of 0 and a relationship of Y ≧ W>C> X among X, Y, C and W. 5. A one-conductivity-type Ga _1-Y having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-Y Al Y As layer and the Ga _1-Z Al Z As layer Ga layer thickness was formed following one conductivity type 0.1μm between _1-B Al B A
s layer, and the G layer formed on the Ga ₁ -Z _AlZ As layer.
and a _1-Z Al Z GaAlAs layer As AlAs mixed crystal ratio than layer consists of at least one layer or more lower or GaAs layer, formed between the Ga _1-X Al X As one end and device end face of the active layer And a Ga _1-w Al _w As layer,
A semiconductor light emitting device having a relationship of Z>Y> X ≧ 0 and B> X between Y, Z and B, and a relationship of Y ≧ W> X between X, Y and W. 6. _One conductivity type Ga _{1 -Y} having a ridge formed on at least one surface of a Ga _{1 -X} Al _X As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-Y Al Y As layer and the Ga _1-Z Al Z As layer Ga layer thickness was formed following one conductivity type 0.1μm between _1-B Al B A
s layer and the Ga _1-X Al X As and the active layer to the Ga _1-C Al C As layer formed in contact, the Ga _1-X Al X As active layer and the Ga _1-C Al C As layer and a Ga _1-w Al _w as layer formed between the one end and the device end face of, X, Y,
Semiconductor light emission having a relationship of Z>Y>C> X ≧ 0 and B> X between Z, B and C, and a relationship of Y ≧ W>C> X between X, Y, C and W element. 7. A one-conductivity-type Ga _1-Y having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-Z Al _Z As formed on said layer Ga _1-Z Al Z As layer and GaAlAs layer or GaAs layer AlAs mixed crystal ratio is formed of at least one layer lower than the Ga _1-X A
l _X As active layer formed in contact with Ga _1-C Al C As layer and said Ga _1-X Al X As active layer and the Ga _1-C A
l _C As Ga formed between the end and the device end face of one of the layers
_1-w Al _w As layer, and Z between X, Y, Z and C
>Y>C> X ≧ 0, and a semiconductor light emitting element having a relation of Y ≧ W>C> X among X, Y, C and W. 8. A one-conductivity-type Ga _1-Y having a ridge formed on at least one surface of a Ga _1-x Al _x As active layer.
An Al _Y As layer, a reverse conductivity type Ga ₁ -Z Al _Z As layer formed along the longitudinal side surface of the ridge,
_1-Y Al Y As layer and the Ga _1-Z Al Z As layer Ga layer thickness was formed following one conductivity type 0.1μm between _1-B Al B A
s layer, and the G layer formed on the Ga ₁ -Z _AlZ As layer.
a _1-Z Al Z As with GaAlAs layer or GaAs layer consisting of one or more layers lower AlAs mixed crystal ratio than layer, the Ga
_1-X Al X As active layer Ga ₁ formed in contact _over C Al _C A
s layer, the Ga _1-x Al _x As active layer and the Ga
_1-C Al _C As a one end and device end face Ga _1-w Al w As layer formed between the layers, X determine the AlAs mixed crystal ratio, Y, Z, between B and C Z>Y>C> X ≧ 0, B
> X, and Y ≧ W> between X, Y, C and W>
A semiconductor light emitting device having a relationship of C> X.