JP3111612B2 - Ultra-small surface sensor and surface measuring device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-small surface sensor for sensing a surface condition using an electron beam, and a surface measuring device for measuring a fine surface shape and condition.

[0002]

2. Description of the Related Art In recent years, electronic devices such as semiconductors supporting advanced technologies have been miniaturized and highly integrated. Also, new materials such as superconducting materials and high-density recording materials have been actively developed. In these fields, the establishment of the evaluation technology as well as the formation technology has become a major issue. For example, checking whether the surface shape after processing is as designed, checking for fine defects and dust generated during processing,
It is also important to investigate the crystallinity, composition, and fine surface shape of the new material.
Scanning electron microscopes, scanning tunneling microscopes, and the like are currently used as methods for examining such surface properties.
In particular, a scanning electron microscope has a deep depth of focus, which allows three-dimensional observation of the sample surface, relatively easy sample preparation, Auger electrons generated from the sample by electron beam irradiation, characteristic X-rays, and cathode luminescence. Is widely used because it is possible to obtain composition information and the like in addition to the three-dimensional shape of the surface by adding a detector for detecting. FIG. 21 shows a scanning electron microscope (Scanning Elect) related to a conventional surface measuring apparatus, which is shown in, for example, “Electron Microscope Technology” (edited by Akira Tomura, Maruzen, 1989, p 118).
FIG. 3 is a basic configuration diagram illustrating a ron microscope (SEM). In the figure, 1 is an electron gun, 3 is an acceleration electrode, 4 is a condenser lens, 5 is a deflection coil, 6 is an objective lens, 7 is a sample, 9
Denotes a detector, and 10 denotes an image display device.

[0003] A conventional scanning electron microscope is constructed as described above. For example, an electron beam 2 generated by an electron gun 1 is accelerated by an acceleration electrode 3, focused by a condenser lens 4, and is deflected by a deflection coil 5. 2 is scanned, and the final beam spot diameter on the sample 7 is determined by the objective lens 6. Secondary electrons or reflected electrons 8 emitted from the sample 7 are detected by a detector 9 by the electron beam 2 irradiated on the sample 7. By inputting a detection signal to the image display device 10 by synchronizing the scanning of the electron beam 2 and the scanning of the image display device 10, the surface shape can be measured.

[0004]

The conventional scanning electron microscope is configured as described above, and has a problem that each component is independent and the apparatus becomes large. For example, in "Scanning microscope JSM-6600F specifications" (JEOL), the size of the main body is 790 mm (width) x
It is 1130 mm (depth) x 1800 mm (height).
The following problems have been caused by the recent rapid miniaturization and high integration of electronic devices such as semiconductors.

[0005] First, as a first problem, conventionally, after processing, a sample was taken out of a processing apparatus and evaluated by a scanning electron microscope or the like. , It has been found that the properties of the surface are changed by taking it out of the processing apparatus. For these reasons, attempts have been made to enable the transfer between the processing apparatus and the evaluation apparatus in a vacuum. However, there is a problem that it is difficult to return to the original state after the conveyance, particularly in the processing with high precision, and the working surface is contaminated from a mechanical contact portion by the conveyance. Further, the vacuum transfer mechanism is usually complicated in many cases, and a large installation area is required when the processing apparatus, the scanning electron microscope, and the vacuum transfer system are combined.

[0006] As a second problem, as the diameter of a wafer increases with the integration of semiconductors on a large scale, it becomes necessary to inspect a large area in a short time in a fine shape. However, the conventional scanning electron microscope has a problem that an aberration occurs in an objective lens when an electron beam is deflected, and a scanning area is limited in order to secure a certain surface resolution. Therefore, a large area sample is measured by moving the sample stage, but the measurement time is limited by the mechanical speed limit of the scanning of the sample stage.
There was a problem that the measurement took a very long time.

Further, when a surface sensor that senses the state of the surface using an electron beam is constructed using the above-described components of the conventional scanning electron microscope, the individual components are separated. There is a problem that the surface sensor itself becomes large because each is large.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has an ultra-small surface sensor and an ultra-small surface measurement which can be incorporated in a processing apparatus or the like using the ultra-small surface sensor. An object of the present invention is to obtain a surface measuring device capable of measuring a large area with high resolution in a short time.

[0009]

According to the present invention, a microminiature surface sensor according to the present invention is formed by attaching a field emission cold cathode formed on a substrate and an insulating material to the substrate via an insulator. An electron beam source comprising an extraction electrode for extracting a line,
An accelerating electrode formed on the extraction electrode via an insulator to accelerate the electron beam, a detector directly formed on the acceleration electrode or formed via an insulator, the cold cathode and the extraction And a plurality of lead wires electrically connected to the electrode, the accelerating electrode, and the detector.

The surface measuring apparatus according to the present invention comprises a field emission cold cathode formed on a substrate and an extraction electrode formed on the substrate with an insulator interposed therebetween to extract an electron beam from the cold cathode. An electron beam source composed of, an accelerating electrode for accelerating the electron beam, formed on the extraction electrode via an insulator, and formed directly or via an insulator on the accelerating electrode. Detector, equipped with a plurality of extraction lines electrically connected to the cold cathode, the extraction electrode, the acceleration electrode, the detector, and a scanning mechanism for scanning the substrate relative to the sample It is.

Further, another surface measuring apparatus according to the present invention comprises a plurality of field emission cold cathodes formed on a single substrate, and a plurality of field emission cold cathodes formed on the substrate via an insulator. A plurality of electron beam sources composed of an extraction electrode for extracting an electron beam from the cathode, and attached on the extraction electrode via an insulator.
An accelerating electrode formed and accelerating the electron beam, a detector formed directly or via an insulator on the accelerating electrode, and an electric power supplied to the cold cathode, the extraction electrode, the accelerating electrode, and the detector. And a scanning mechanism for relatively scanning the substrate with respect to the sample.

[0012]

[Action] In the constructed tiny surface sensor over as described above, the electron beam source, the accelerating electrode, the detector are integrated,
The sensor itself becomes very small and can be incorporated into various devices.

Further, in the surface measuring device configured as described above, the electron beam source, the accelerating electrode and the detector are integrated, and the surface measuring device itself is miniaturized and can be incorporated in a processing device or the like. become.

In another surface measuring apparatus configured as described above, a plurality of electron beam sources, accelerating electrodes, and detectors are integrated and integrated on a single substrate, resulting in a very small size. It becomes possible to incorporate it into processing equipment, etc.
By scanning the single substrate, the surface properties of a large area can be measured with high resolution in a short time.

[0015]

【Example】

Embodiment 1 FIG. FIG. 1 is a cross-sectional view of a main part of a surface measuring apparatus according to an embodiment of the present invention, in which a field emission cold cathode 11 and an extraction electrode formed on a substrate 12 including the cold cathode 11 via an insulator 13. 14 constitutes the electron beam source 101. An acceleration electrode 102 for accelerating the electron beam 20 extracted from the electron beam source 101 is formed on the extraction electrode 14 via an insulator 15 and a detector 103.
Are formed on the accelerating electrode 102 via an insulator 16. The surface measuring element (hereinafter, referred to as a surface sensor) 201 configured as described above is installed to face the sample 70.

The above-mentioned surface sensor 201 has scanning mechanisms (for example, piezo elements) 202a and 202b for relatively scanning the sample in the X and Y directions, respectively, as shown in FIG.
The surface sensor 201 installed on the scanning mechanism 202 is mounted on an XYZ stage 203. Substrate 12 and extraction electrode 14
When a voltage of several hundred volts is applied during this time, an electron beam is extracted from the cold cathode 11 by field emission. Then, by applying a voltage of several thousand V to the accelerating electrode 102, the extracted electron beam can be accelerated and focused. The sample is irradiated with this electron beam, and secondary electrons and reflected electrons generated at that time are detected by the detector 103. For example, when the detector 103 is formed of a semiconductor having a pn junction, reflected electrons can be detected as a current. A signal from a scanning control mechanism 204 that scans a measurement location by moving a piezo element 202 and a detector 1
03, a detection signal detected as a current from the image display device 2
At 05, an image is created and the surface shape is measured.

Embodiment 2 FIG. FIG. 3 is an explanatory view of a main part of a surface measuring apparatus according to another embodiment of the present invention.
6, 101 and 102 are the same as in FIG. Detector 104
Are formed on the accelerating electrode 102 with the insulator 16 interposed therebetween, and the detection notes 104 are divided into a plurality of parts, and independently output detection signals.

The surface measuring apparatus configured as described above is
It is mounted as in FIG. 2 in the same manner as in FIG.
Since the detectors 104 can output detection signals independently of each other, information on the three-dimensional shape of the surface can be obtained.

Embodiment 3 FIG. FIG. 4 is a cross-sectional view of a main part of a surface measuring apparatus according to another embodiment of the present invention.
5, 101 and 102 are the same as those in FIG. Detector 105
Are formed directly on the accelerating electrode 102, and the same effect as in FIG. 1 can be obtained even if the accelerating voltage applied to the accelerating electrode 102 and the bias voltage applied to the detector 105 are made common.

Embodiment 4 FIG. FIG. 5 is a cutaway perspective view of a main part according to another embodiment of the surface measuring apparatus of the present invention. 11, 13, 15, and 16 are the same as those in FIG. A plurality of field emission cold cathodes 11 are formed on a single substrate 32 in a matrix. An extraction electrode 34 formed on a substrate 32 including a plurality of the cold cathodes 11 with an insulator 13 interposed therebetween.
Constitute a plurality of electron beam sources 301. The extraction electrodes 34 are electrically connected in the row direction, such as 34a, 34b,. An acceleration electrode 302 for accelerating an electron beam extracted from the electron beam source 301 is formed on the extraction electrode 34 via an insulator 15. The acceleration electrodes 302 are electrically connected in the column direction, such as 302a, 302b,. A detector 303 is formed on the accelerating electrode 302 via an insulator 16.

The surface measuring device constructed as described above is mounted as shown in FIG. 2 in the same manner as in FIG. When a voltage of several hundred volts is applied between the substrate 32 and the first row of extraction electrodes 34a, electron beams are extracted from the cold cathode 11 by field emission. Then, by applying a voltage of several thousand volts to the acceleration voltage 302a in the first column, the electron beam passing through the acceleration electrode 302a in the column among the electron beams extracted in the row is accelerated and focused. The sample is irradiated with this electron beam, and secondary electrons and reflected electrons generated at that time are detected by a detector 303. Next, while the voltage is applied to the extraction electrode 34a in the first row, the application of the acceleration voltage is changed from the acceleration electrode 302a in the first column to the acceleration electrode 302b in the second column, whereby the electron beam in the first row and the second column is changed. Are accelerated and focused. In the same manner, the processing is sequentially performed up to the last column. Next, the application of the extraction voltage is changed from the extraction electrode 34a in the first row to the extraction electrode 34b in the second row. In the same manner, the electron beams in all rows and columns are accelerated and focused, and are irradiated on the sample. Secondary electrons and reflected electrons generated at that time are detected by the detector 303. Next, the scanning mechanism 202
Moves the position of the surface sensor 201 with respect to the sample, and performs the same operation as described above. By scanning the area where the row and column intervals of the electron beam source are reduced by the scanning mechanism, all the measurement areas can be scanned. can do. In this embodiment, the measurement time is much shorter than in the prior art due to the small mechanical scanning range.

Embodiment 5 FIG. FIG. 6 is a cutaway perspective view of a main part showing another embodiment of another surface measuring apparatus of the present invention. 11, 13, 15, and 16 are the same as those in FIG. A plurality of field emission cold cathodes 11 are formed in a matrix on a single substrate 42. The substrate 42 forms a separation layer 42b by ion implantation or the like, and the separation layer 42b is connected in the column direction. The conductive layer 42a of the substrate 42
Are connected in the column direction. Since a semiconductor such as silicon or germanium is used for the substrate 42, the resistivity is high. Therefore, the electrode 17a is formed on the conductive layer 42a. Therefore, the cold cathodes 11 are electrically connected in the column direction. A plurality of electron beam sources 401 are formed by the extraction electrodes 34 formed on the substrate 42 including the plurality of cold cathodes 11 via the insulator 13. The extraction electrode 34 is 3
4a, 34b... Are electrically connected in the row direction. An acceleration electrode 402 for accelerating an electron beam extracted from the electron beam source 401 is formed on the extraction electrode 34 via an insulator 15 and a detector 403.
Are formed on the accelerating electrode 402 via the insulator 16. The detector 403 is separated so as to correspond to each electron beam source, and the electrode 4 to which a bias voltage is applied is provided.
04a and 404b are electrically connected in the row direction and the column direction, respectively.

The surface measuring device constructed as described above is mounted as shown in FIG. 2 in the same manner as in FIG. When a voltage of several hundred volts is applied between the first column electrode 17a and the first row extraction electrode 34a, an electron beam is extracted from the cold cathode 11 in the first row and first column by field emission. The extracted electron beam is accelerated and focused by the acceleration electrode 402 to which a voltage of several thousand volts is applied. The sample is irradiated with this electron beam,
Secondary electrons and reflected electrons generated at that time are detected by the detector 403. When a bias voltage is applied to the detector 403 corresponding to each electron beam source, the detected solid angles become equal, so that accurate measurement can be performed. Next, while the voltage is applied to the electrode 17a in the first column, the application of voltage is changed from the extraction electrode 34a in the first row to the extraction electrode 34b in the second row, whereby the electron beam in the second row and the first column is accelerated. And focused. In the same manner, the processing is sequentially performed up to the last line. Next, the voltage application is changed from the first row of electrodes 17a to the second row of electrodes 17b. In the same manner, the electron beams in all rows and columns are accelerated and focused, the sample is irradiated, and secondary electrons and reflected electrons generated at that time are detected by the detector 403 synchronized with the electron beam source. Next, similarly to the fourth embodiment, the scanning mechanism 2
02, the position of the surface sensor 201 is moved with respect to the sample,
Do the same as above. If the scanning mechanism scans the area where the row and column intervals of the electron beam source are reduced, all the measurement areas can be scanned. It can be measured in time.

In addition to the above-described one having a plurality of electron beam sources on a single substrate as shown in FIGS. 5 and 6, the detector in FIG. 5 is divided as shown in FIG. Alternatively, the detector in FIG. 6 may be configured as an integral unit as shown in FIG.

Embodiment 6 FIG. In each of the embodiments described above, the surface measuring device is shown. However, the ultra-small surface sensor 201 shown in FIG. 1 can be used for other devices, and FIG. 7 is used as one component constituting a micro-barcode reader. Show the case.

Next, the operation will be described. When a voltage of several hundred volts is applied between the substrate 12 and the extraction electrode 14, an electron beam is extracted from the cold cathode 11 by field emission. Then, by applying a voltage of several thousand V to the accelerating electrode 102, the extracted electron beam can be accelerated and focused. The electron beam is applied to the substrate 71, and secondary electrons and reflected electrons generated at that time are detected by the detector 103. For example, detector 1
By using 03 formed of a semiconductor having a pn junction, reflected electrons can be detected as a current. For example, as shown in FIG. 7, a barcode pattern is etched on the substrate 71, the microminiature surface sensor 201 is attached to the support base 72 in a slightly inclined state, and the support base 72 is moved at a constant speed in parallel with the substrate surface. The intensity change of the secondary electrons and the reflected electrons at that time is measured. When the wall surface of the etched groove is irradiated with an electron beam, the detection amounts of secondary electrons and reflected electrons differ greatly. A bar code can be recognized by encoding a change in the intensity of secondary electrons or reflected electrons with a code converter (not shown). Such a barcode can be etched into a semiconductor substrate or the like and used for lot management of the semiconductor substrate.

Embodiment 7 FIG. FIG. 8 is a cross-sectional view illustrating a main part of another microminiature surface sensor, and the detector 106 is a photodetector. FIG. 9 shows a case in which this microminiature surface sensor 206 is used as one component of a microminiature barcode reader.
Shown in

Next, the operation will be described. When a voltage of several hundred volts is applied between the substrate 12 and the extraction electrode 14, an electron beam is extracted from the cold cathode 11 by field emission. Then, by applying a voltage of several thousand V to the accelerating electrode 102, the extracted electron beam can be accelerated and focused. This electron beam is irradiated on a bar code 74 made of a fluorescent substance formed on a substrate 73, and the light generated at that time is
Detect at 6. For example, when the detector 106 is formed using a semiconductor having a pin junction, light can be detected as a current. The detected detection signal is encoded by a code converter, and the bar code is recognized. In this case, unlike the case where secondary electrons or reflected electrons are detected, the amount of electron beam irradiation fluctuates at a level that emits light that is stronger than the detectable level because light is not emitted except for the portion that characterizes the barcode. It does not affect bar code recognition.

Embodiment 8 FIG. FIG. 10 shows another application example of the microminiature surface sensor, which is used for a positioning device. In the figure, 11 to 16, 101, 102, 10
6 and 206 are the same as in FIG.

The positioning device configured as described above
In the same manner as in FIG. 8, an electron beam is applied to a positioning pattern 75 made of a fluorescent substance formed on a substrate 73, and the light generated at that time is detected by a detector 106. Pattern 75 in tiny surface sensors over as in FIG. 10 20
The substrate 73 is moved at a constant speed in parallel with respect to 6, and the direction of movement is reversed at a place where the light detection time changes from short to long, and moves toward the center position while gradually reducing the speed. This enables positioning. The positioning pattern is not limited to this.

Embodiment 9 FIG. 11 and 12 show still another application example of the ultra-small surface sensor, which is used in a read-only storage device. In the figure, 11-1
6, 101, 102, 106, and 206 are the same as those in FIG.

Next, the operation will be described. When a voltage of several hundred volts is applied between the substrate 12 and the extraction electrode 14, an electron beam is extracted from the cold cathode 11 by field emission. Then, by applying a voltage of several thousand V to the accelerating electrode 102, the extracted electron beam can be accelerated and focused. This electron beam is applied to the bit pattern 77 made of a fluorescent substance formed on the substrate 76, and the light generated at that time is detected by the detector 106. For example, when the detector 106 is formed using a semiconductor having a pin junction, light can be detected as a current. The detected detection signal is encoded into codes of 0 and 1, and the stored information is restored.

In the above description, the case where the barcode pattern, the positioning pattern, and the bit pattern are formed on the substrate or the substrate is described. However, the present invention is not limited to this.

Next, a method of manufacturing the surface sensor used in the above embodiment will be described. First, a manufacturing method of a main part of the surface measuring apparatus described in Embodiment 4 of the present invention will be described with reference to FIGS. 13, 14, and 15.
Reference numeral 501 denotes a Si single crystal, and a resist material 502 is formed on the Si single crystal (100) plane as shown by A. Next, as shown in B, anisotropic etching is performed using reactive ion etching or the like. C is the Si single crystal 501 from which the resist film 502 has been removed. Next, as shown in D, an insulating film 5 such as silicon dioxide or the like is formed on the surface by using a chemical vapor deposition method or the like.
03 is formed. This is etched back to a state like E, and a resist material 504 is placed on the
It is formed as follows. Oxidation is performed in this state to form small oxidized regions 505 at intervals of several μm. After removing the resist material 504 as shown in G, as shown in H, a conductive film 506 of tungsten or the like to be an extraction electrode is formed.
Next, after forming a resist pattern 507 like I, the conductive film 506 is etched. Resist material 506
Then, as shown in J, an insulating film 508 such as silicon dioxide is formed using a chemical vapor deposition method or the like. With chemical vapor deposition, it is possible to form a film with a flat surface even when there is a step in the base, but if flatness cannot be secured, etch back after depositing a thick insulating film. It is also possible to obtain a flat surface. After forming a conductive film such as tungsten to be an acceleration electrode and forming a resist pattern, the conductive film is etched,
As shown in K, a conductive film 509 serving as an acceleration electrode is obtained. L
As shown in FIG. 7, a semiconductor detector 511 having a pn junction is attached using an insulating resin or the like. Next, as shown in M,
A hole of several μm or less is formed by etching using a focused ion beam or the like. The etching is performed to the depth of the conductive film 506 to be the extraction electrode. Next, as shown by N, anisotropic etching is performed using a potassium hydroxide solution or the like to form a cold cathode. Finally, the oxide film 505 on the top of the cold cathode is removed using hydrofluoric acid or the like, and etching is performed to sharpen the tip of the cold cathode using reactive ion etching or the like. Several mm are possible).

Taking the surface measuring apparatus described in the fourth embodiment of the present invention as an example, another method of manufacturing the main part is shown in FIGS. 16, 17 and 18. Reference numeral 501 denotes a Si single crystal, and a resist material 502 is formed on the Si single crystal (100) plane as shown by A. Next, as shown in B, isotropic etching is performed using a hydrofluoric acid solution or the like. C is a resist film 502
After removing the Si single crystal 501. Next, as shown in D, an insulating film 503 made of silicon dioxide or the like is formed on the surface by using a chemical vapor deposition method or the like. This is etched back so as to have a state like E, and as shown in F, a conductive film 506 such as tungsten serving as an extraction electrode is formed. After forming a resist pattern 507 like G, the conductive film 506 is etched. H shows the state after the resist material 506 is removed. As shown in I, an insulating film 5 such as silicon dioxide is formed by using a chemical vapor deposition method or the like.
08 is formed. With chemical vapor deposition, it is possible to form a film with a flat surface even when there is a step in the base, but if flatness cannot be secured, etch back after depositing a thick insulating film. It is also possible to obtain a flat surface. A conductive film of tungsten or the like serving as an acceleration electrode is formed as shown by J, and after forming a resist pattern, the conductive film is etched to obtain a conductive film 509 serving as an acceleration electrode as shown by K. As shown in L, a semiconductor detector 51 having a pn junction using an insulating resin or the like.
Add 1. Next, as shown by M, a hole of several μm or less is formed by etching using a focused ion beam or the like.
The etching is performed to the depth of the conductive film 506 to be the extraction electrode. Next, as shown by N, the silicon dioxide is selectively etched using a hydrofluoric acid solution or the like to form a cold cathode.
Finally, etching may be performed to sharpen the tip of the cold cathode using reactive ion etching or the like.

Next, a method of manufacturing a main part of the ultra-small surface sensor described in Embodiments 7 to 9 of the present invention will be described with reference to FIGS. 19 and 20. Reference numeral 601 denotes a Si single crystal, and a resist material 602 is formed on the Si single crystal (100) plane as shown by A. Next, as shown in B, isotropic etching is performed using a hydrofluoric acid solution or the like. C is a resist film 6
02 is the Si single crystal 601 after removal. Next, as shown in D, an insulating film 603 made of silicon dioxide or the like is formed on the surface by using a chemical vapor deposition method or the like. This is etched back so as to be in a state like E, and as shown in F, a conductive film 604 such as tungsten serving as an extraction electrode is formed.
To form Next, as shown in G, an insulating film 6 such as silicon dioxide is formed on the conductive film by using a chemical vapor deposition method or the like.
05 is formed. As shown in H, a conductive film 606 of tungsten or the like to be an acceleration electrode is formed. Next, as shown in I, an insulating film 607 such as silicon dioxide is formed on the conductive film by using a chemical vapor deposition method or the like. Next, as shown in J, a conductive film 608 of tungsten or the like to be an electrode of the detector is formed. Then, as shown in K, the amorphous Si 609 of the p layer is formed by chemical vapor deposition or the like,
As shown in FIG.
0, then an n-layer amorphous Si 61
Form one. Finally, as shown by N, a conductive film 612 made of tungsten or the like to be the other electrode of the detector is formed to constitute a photodetector. The pin stacking order is not limited to this. Next, as shown by O, holes having a size of several μm or less are formed by etching using a focused ion beam or the like. The etching is performed up to the depth of the conductive film 604 serving as an extraction electrode. Next, as shown by P, isotropic etching is performed using a hydrofluoric acid solution or the like to form a cold cathode. Finally, by using a reactive ion etching method or a sputtering method in which an ion beam or the like is incident obliquely,
A process for sharpening the tip of the cold cathode may be performed.

By the way, in each of the surface sensors described above, at least one electrode which acts as an electrostatic lens may be inserted into the insulators 15 and 16. Further, silicon or the like doped for the extraction electrode, the acceleration electrode, and the electrode that functions as the electrostatic lens may be used.

[0038]

As described above, according to the present invention, a field emission cold cathode formed on a substrate and a drawer which is formed on the substrate via an insulator and draws an electron beam from the cold cathode. An electron beam source composed of an electrode, an accelerating electrode that is formed on the extraction electrode via an insulator and accelerates the electron beam, directly on the accelerating electrode or via an insulator.
Since the ultra-small surface sensor is composed of the detector formed , the cold cathode, the extraction electrode, the acceleration electrode, and a plurality of extraction lines electrically connected to the detector, an electron beam source, an acceleration, electrodes, the detector can be integrated sensor itself becomes a tiny, to be incorporated into a variety of devices.

Further, the surface measuring apparatus of the present invention comprises a field emission cold cathode formed on a substrate, and an extraction electrode which is formed on the substrate via an insulator and draws an electron beam from the cold cathode. An accelerating electrode which is formed on the extraction electrode via an insulator and accelerates the electron beam, and which is directly or via an insulator on the accelerating electrode.
A detector formed, a plurality of lead wires electrically connected to the cold cathode, the lead electrode, the acceleration electrode, and the detector, and a scanning mechanism for scanning the substrate relative to a sample. , The electron beam source, the accelerating electrode, and the detector can be integrated , the surface measuring device itself can be miniaturized, and can be incorporated into a processing device or the like.

Further, another surface measuring apparatus of the present invention comprises a plurality of field emission cold cathodes formed on a single substrate, and a plurality of field emission cold cathodes formed on the substrate via an insulator. A plurality of electron beam sources composed of an extraction electrode for extracting an electron beam, an acceleration electrode formed on the extraction electrode via an insulator, and accelerating the electron beam, the acceleration electrode Detector formed directly on or via an insulator, the cold cathode, the extraction electrode, the acceleration electrode, a plurality of extraction lines electrically connected to the detector, and the substrate as a sample which is configured with a scanning mechanism for relatively scanned with respect to a plurality of electron beam sources on a single substrate, the acceleration electrode can be integrated integrated by the detector, surface measuring apparatus itself a tiny And it can be incorporated into processing equipment, etc. By relatively run <br/>査one substrate to the sample, there is an effect capable of measuring surface texture of a large area in a short time with high resolution.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a main part of a surface measuring apparatus according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram illustrating a surface measurement device according to a first embodiment of the present invention.

FIG. 3 is an explanatory diagram showing a main part of a surface measuring device according to a second embodiment of the present invention.

FIG. 4 is a sectional view showing a main part of a surface measuring apparatus according to a third embodiment of the present invention.

FIG. 5 is a cutaway perspective view showing a main part of a surface measuring apparatus according to Embodiment 4 of the present invention.

FIG. 6 is a cutaway perspective view showing a main part of a surface measuring apparatus according to Embodiment 5 of the present invention.

FIG. 7 is a sectional view showing a main part of a micro barcode reader according to a sixth embodiment of the present invention.

FIG. 8 is a sectional view showing a main part of a microminiature surface sensor according to a seventh embodiment of the present invention.

FIG. 9 is a perspective view showing a micro barcode reader according to Embodiment 7 of the present invention.

FIG. 10 is a sectional view showing a main part of a positioning device according to an eighth embodiment of the present invention.

FIG. 11 is a plan view showing a storage device according to a ninth embodiment of the present invention.

FIG. 12 is a sectional view showing a storage device according to a ninth embodiment of the present invention.

FIG. 13 is an explanatory diagram showing a method for manufacturing a main part of the surface measuring device according to the fourth embodiment of the present invention.

FIG. 14 is an explanatory view showing a method of manufacturing a main part of the surface measuring device according to the fourth embodiment of the present invention.

FIG. 15 is an explanatory diagram showing a method for manufacturing a main part of the surface measuring device according to the fourth embodiment of the present invention.

FIG. 16 is an explanatory view showing another method of manufacturing a main part of the surface measuring device according to the fourth embodiment of the present invention.

FIG. 17 is an explanatory view showing another method of manufacturing a main part of the surface measuring device according to the fourth embodiment of the present invention.

FIG. 18 is an explanatory view showing another method of manufacturing the main part of the surface measuring device according to the fourth embodiment of the present invention.

FIG. 19 is an explanatory view showing a method of manufacturing a main part of the microminiature surface sensor used in Examples 7 to 9 of the present invention.

FIG. 20 is an explanatory view showing a method for manufacturing a main part of the microminiature surface sensor used in Examples 7 to 9 of the present invention.

FIG. 21 is a configuration diagram showing a conventional surface measurement device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Field emission cold cathode 12 Substrate 13 Insulator 14 Extraction electrode 15 Insulator 16 Insulator 20 Electron beam 32 Substrate 34 Extraction electrode 42 Substrate 70 Sample 101 Electron beam source 102 Acceleration electrode 103 Detector 104 Detector 105 Detector 106 Detector 201 Surface Sensor 202 Scanning Mechanism 206 Surface Sensor 301 Electron Beam Source 302 Acceleration Electrode 303 Detector 401 Electron Beam Source 402 Acceleration Electrode 403 Detector

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hideki Komori 8-1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Co., Ltd., Production Engineering Laboratory (72) Inventor Noriyuki Kosaka 8-1-1 Honcho Tsukaguchi, Amagasaki City (56) References JP-A-4-179116 (JP, A) JP-A-63-269445 (JP, A) JP-A-2-226635 (JP, A) (58) Field surveyed (Int.Cl. ⁷ , DB name) H01J 37/28 H01J 37/073

Claims (3)

(57) [Claims] A field emission cold cathode formed on a substrate;
On the substrate is deposited and formed through an insulator, an electron beam source comprised of a lead-out electrode for extracting an electron beam from the cold cathode, is deposited and formed through an insulator on said extraction electrode,
An accelerating electrode for accelerating the electron beam, a detector formed directly or via an insulator on the accelerating electrode, and electrically connected to the cold cathode, the extraction electrode, the accelerating electrode, and the detector. Ultra-small surface sensor with multiple connected leads. 2. A field emission cold cathode formed on a substrate,
On the substrate is deposited and formed through an insulator, an electron beam source comprised of a lead-out electrode for extracting an electron beam from the cold cathode, is deposited and formed through an insulator on said extraction electrode,
An acceleration electrode for accelerating the electron beam, a detector formed directly or via an insulator on the acceleration electrode, and electrically connected to the cold cathode, the extraction electrode, the acceleration electrode, and the detector A surface measurement device comprising: a plurality of extracted lead lines; and a scanning mechanism that scans the substrate relative to a sample. 3. A plurality of field emission cold cathodes formed on a single substrate, and formed on the substrate via an insulator, and an electron beam is extracted from each of the cold cathodes. A plurality of electron beam sources composed of an extraction electrode, an acceleration electrode that is formed on the extraction electrode via an insulator and accelerates the electron beam,
A detector formed on the accelerating electrode directly or via an insulator, a plurality of drawers electrically connected to the cold cathode, the extractor electrode, the accelerating electrode, and the detector A surface measuring device comprising a line and a scanning mechanism for scanning the substrate relative to a sample.