JP3109451B2 - Quartz crucible and method for evaluating the quartz crucible - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a quartz crucible and a method for evaluating the quartz crucible, and more particularly to a method for pulling a silicon single crystal by a pulling method such as a Czochralski method (hereinafter referred to as a CZ method). And a method for evaluating the quartz crucible.

[0002]

2. Description of the Related Art At present, most of silicon single crystals used for manufacturing substrates for forming circuit elements such as LSIs (large-scale integrated circuits) are silicon single crystals pulled up by the CZ method. FIG. 9 is a cross-sectional view schematically showing a single crystal pulling apparatus used in the CZ method. In the figure, reference numeral 11 denotes a crucible.

The crucible 11 has a bottomed cylindrical quartz crucible 11a made of amorphous silica, and a bottomed cylindrical graphite crucible 11 fitted to the outside of the quartz crucible 11a.
The crucible 11 is supported by a support shaft 18 that rotates at a predetermined speed in the direction of the arrow in the figure.
A heater 12 of a resistance heating type and a heat retaining cylinder 17 are arranged concentrically outside the crucible 11, and a melt 1 of a crystal raw material to be melted by the heater 12 is placed in the crucible 11.
3 is filled. In addition, on the central axis of the crucible 11, a pulling rod or a wire is used.
A lifting shaft 14 is suspended, and the lifting shaft 14 is
The seed crystal 15 is attached to the lower end of the base via a holder 14a. The crucible 11 and the heater 12 are housed in a water-cooled chamber 19 capable of controlling the pressure.

When the single crystal 16 is pulled using the single crystal pulling apparatus 10 described above, first, the raw material for crystallization is melted by the heater 12, and the pressure in the chamber 19 is reduced.
The gas in the melt 13 is left sufficiently for a while to be released, and then an inert gas such as Ar is introduced to form a reduced-pressure inert gas atmosphere.

Next, while rotating the pull-up shaft 14 at a predetermined speed in the opposite direction on the same axis as the support shaft 18, the holder 1
The seed crystal 15 attached to the melt 4a is lowered.
3 and the crystal is grown at the tip of the seed crystal 15. At this time, the crystal is once narrowed down to a predetermined diameter,
The neck 16a is formed.

Next, after growing the neck 16a to a predetermined diameter and forming a shoulder 16b, a main body 16c having a predetermined diameter and a predetermined length is formed. Then, the single crystal 16
Is gradually reduced to gradually lower the temperature of the entire single crystal 16 to form a terminal cone (not shown). Then, the single crystal 16 is separated from the melt 13.

In the above-described pulling of a single crystal, it is necessary to pull up a single crystal 16 that does not contain dislocations. However, when the seed crystal 15 is immersed in the melt 13, dislocations are easily introduced by heat shock, Neck 16 below crystal 15
a is formed and the crystal is squeezed finely to make the shape of the tip end face of the neck 16a convex downward, and the dislocation is
a has been excluded.

[0008]

However, once the dislocations are eliminated, even when the shoulder 16b and the main body 16c are formed, dislocations may be introduced (dislocations) due to various causes. In addition, the yield of the single crystal 16 pulled by dislocation decreases. Causes for causing the dislocation include various things,
One of them is crystalline silica released from the quartz crucible 11a during single crystal pulling. That is, the vicinity of the inner surface of the amorphous quartz crucible 11a in contact with the melt 13 changes to crystalline silica such as cristobalite during the pulling of a single crystal, and the vicinity of the inner surface dissolves in the melt 13 Thus, the crystalline silica is mixed into the melt 13.
Thereafter, the crystalline silica reaches the solid-liquid growth interface, and inhibits the growth of the single crystal 16 to introduce dislocations.

One of the causes of crystallization near the inner surface of the amorphous quartz crucible 11a is an impurity (especially an alkali metal or the like) existing near the inner surface. It is considered that the impurities existing near the inner surface serve as nuclei and the amorphous quartz crystallizes. However, the type and concentration of impurities in the vicinity of the inner surface of the quartz crucible 11a, such as how much impurities are present in the vicinity of the inner surface of the quartz crucible 11a to generate crystalline silica and the dislocation of the single crystal 16, etc. At present, a clear correlation between the dislocation and the dislocation of the single crystal 16 has not yet been grasped.

The degree of crystallization on the surface of the quartz crucible 11a is estimated to some extent by the size of the ring-shaped pattern appearing on the inner surface of the quartz crucible 11a reflecting the crystallization after pulling the single crystal. Also in this case, a clear correlation between the size of the ring-shaped pattern and the dislocation of the single crystal 16 has not yet been grasped.

As described above, conventionally, single crystal 1
6, the dislocation of the single crystal 16 caused by the crystalline silica released from the quartz crucible 11a during the pulling of the quartz crucible 1a.
No clear correlation has been found between the characteristics of the quartz crucible 11a and the characteristics of the quartz crucible 11a.
There is a problem that it is not clearly understood how much dislocation of the single crystal 16 can be reduced if a is used.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and when a single crystal is pulled by a method such as the CZ method, a quartz crucible capable of reducing dislocations in the single crystal, and a method of pulling the single crystal. An object of the present invention is to provide a method for evaluating the quartz crucible useful for reducing dislocation.

[0013]

The quartz crucible according to the present invention for achieving the above object is an amorphous quartz crucible used for pulling a single crystal. The crystallization ratio in the vicinity of the inner surface in contact with the melt is 10% or less.

The quartz crucible has a crystallization rate of 10 near the inner surface in contact with the melt at the end of pulling the single crystal.
% Or less, and the value of the crystallization ratio is small in the portion that has been in contact with the melt for the longest time. Therefore, the probability that the crystalline silica is mixed into the melt can be reduced more reliably. If the quartz crucible is used for pulling the single crystal, the single crystal can be pulled at a high yield.

Further, the method (1) for evaluating a quartz crucible according to the present invention is a method for evaluating an amorphous quartz crucible used for pulling a single crystal. Is characterized in that the quartz crucible is evaluated from the correlation between the ratio of the crystallized region and the dislocation ratio of the pulled single crystal.

According to the quartz crucible evaluation method (1),
The ratio of the crystallization region in the vicinity of the inner surface of the quartz crucible after pulling the single crystal and the correlation between the dislocation ratio of the single crystal actually pulled using the quartz crucible and the correlation of the quartz crucible are determined. Since the evaluation is performed, it is possible to reliably evaluate the yield rate at which the single crystal can be pulled when the quartz crucible is used. Further, regarding the correlation between the ratio of the crystallization region near the inner surface of the quartz crucible and the dislocation ratio of the single crystal,
It was also confirmed that reproducibility was obtained when a quartz crucible of the same type as the quartz crucible was used. Therefore, by using the above evaluation method, when pulling a single crystal using the same type of quartz crucible, it is possible to reliably predict how much yield can be pulled single crystal, By using a quartz crucible with a high evaluation, a single crystal can be pulled with a high yield.

Further, the method (2) for evaluating a quartz crucible according to the present invention is the method for evaluating a quartz crucible (1) described above, wherein the crystal near the inner surface of the quartz crucible that is in contact with the molten liquid at the end of pulling of the single crystal. It is characterized in that the quartz crucible is evaluated from the correlation between the ratio of the crystallized region and the dislocation conversion ratio of the pulled single crystal.

According to the quartz crucible evaluation method (2),
Since the vicinity of the inner surface that has been in contact with the melt for the longest when pulling the single crystal is evaluated, when pulling the single crystal, it is more reliable to determine the yield at which the single crystal can be pulled. Can be expected.
Therefore, by using a quartz crucible of the same type as a quartz crucible that has been highly evaluated, a single crystal can be more reliably pulled with a high yield.

The method (3) for evaluating a quartz crucible according to the present invention is the method for evaluating a quartz crucible (1) or (2) above, wherein at least 20 μm from the inner surface of the quartz crucible is measured.
Is characterized in that the range of (1) is a range for obtaining the ratio of the crystallization region.

According to the quartz crucible evaluation method (3),
Since the range of at least 20 μm from the inner surface of the quartz crucible is set as the range for calculating the ratio of the crystallization region, information on the ratio of the crystallization region in a portion very close to the inner surface can be obtained, and the reliability of the evaluation Will be higher.

Further, the quartz crucible evaluation method (4) according to the present invention is obtained by shaving the vicinity of the inner surface of the quartz crucible in any of the quartz crucible evaluation methods (1) to (3). It is characterized in that the ratio of the crystallization region near the inner surface of the quartz crucible is determined by performing X-ray diffraction analysis using a sample piece.

According to the quartz crucible evaluation method (4),
Since X-ray diffraction analysis is performed using the material constituting the vicinity of the inner surface of the quartz crucible, data on the crystallization ratio near the inner surface of the quartz crucible can be easily obtained, and the cost can be easily reduced. The quartz crucible can be evaluated.

The method (5) for evaluating a quartz crucible according to the present invention is the method according to any one of the methods (1) to (3) for evaluating a quartz crucible, wherein the ratio of the crystallized region near the inner surface of the quartz crucible is determined. , Using an image obtained by a transmission electron microscope (TEM).

According to the quartz crucible evaluation method (5),
Since the image obtained by actually observing the vicinity of the inner surface of the quartz crucible by TEM is used, the ratio of the crystallized region can be more accurately obtained. Further, when performing the X-ray diffraction analysis, it can be used as a material for determining how much depth should be cut from the inner surface of the quartz crucible, and the like. By using the crucible evaluation method (4) together, the quartz crucible can be evaluated more efficiently.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a quartz crucible and a method for evaluating the quartz crucible according to the present invention will be described below with reference to FIGS. 1, 2 and 5. FIG.

FIG. 1 is a cross-sectional view schematically showing the quartz crucible after the pulling of the single crystal is completed, where 110a is the inner surface of the quartz crucible 11a, and 13a is the bottom of the quartz crucible 11a after the pulling of the single crystal. Solidified body of the melt 13 remaining in the
Reference numeral 111a denotes a portion of the inner surface 110a that is in contact with the solidified body 13a. In the method for evaluating a quartz crucible according to the embodiment, the quartz crucible 11a is evaluated using the quartz crucible 11a from which the single crystal has been pulled up.

Quartz crucible 11 from which single crystal has been pulled up
There is a predetermined correlation between the crystallization ratio near the inner surface 110a (inner surface 111a) of a and the ratio of a portion where dislocations do not occur in the pulled single crystal (pulling yield). Therefore, the quartz crystal crucible 11a is evaluated by measuring the crystallization rate near the inner surface 110a of the quartz crucible 11a. Specifically, the quartz crucible 11a is formed by the following method.
Is evaluated.

First, a quartz crucible 11 having various characteristics
Using a, the single crystal 16 is pulled up by the method (FIG. 9) described in “Prior Art”. Next, whether or not dislocations have occurred in the pulled single crystal 16 and, if dislocations have occurred, the pulling yield (the ratio of the portion without dislocations) are calculated. Whether a dislocation has occurred in the single crystal 16 and which portion has a dislocation can be determined by slicing the pulled single crystal 16 in the growth direction (length direction) and obtaining a thin slice of the obtained single crystal 16. The determination is made by measuring the X-ray topograph.

Next, the rate of crystallization near the inner surface 110a of the quartz crucible 11a used for pulling the single crystal is measured.

As shown in FIG. 1, a solidified body 13a of the melt 13 not used for pulling the single crystal remains at the bottom of the quartz crucible 11a after the pulling of the single crystal is completed. Most of the inner surface 110a of the quartz crucible 11a is in contact with the melt 13 when the single crystal is pulled, and the inner surface 111a of the inner surface 110a that is in contact with the solidified body 13a is melted for the longest time. This means that it was in contact with liquid 13. Quartz crucible 11 before single crystal pulling
The inner surface 110a of the quartz crystal crucible 11a after the single crystal is pulled up is the same as the inner surface 110a of the quartz crucible 11a during the pulling of the single crystal, because the inner surface 110a of the a melts into the melt 13 when the single crystal is pulled up. Not a state. However, the inner surface 110 of the quartz crucible 11a after the single crystal is pulled up.
a, especially the vicinity of the inner surface 111a, was measured to determine the degree of crystallization of amorphous quartz, and the quartz crucible 11
It can be estimated how much a has crystallized.

The method of measuring the ratio of the crystallized region near the inner surface 110a of the quartz crucible 11a includes a method using an image obtained by a TEM and a method using X-ray diffraction analysis.

In the method using an image obtained by a TEM, the crystallinity near the inner surface 110a of the quartz crucible 11a is reduced by T
Observation is performed using an image obtained by EM, and the ratio of the area of the crystallized portion is determined to be the crystallization ratio.

Specifically, the inner surface 11 of the quartz crucible 11a is
A slice having a cut surface substantially perpendicular to 0a is cut out. Next, the thin section is further subjected to a polishing treatment or the like to a thickness of several μm, and a TEM photograph is taken. This T
From the EM photograph, the difference between the amorphous portion and the crystallized portion can be clearly recognized.

FIG. 2A is a TEM photograph showing the crystal structure near the inner surface 111a of the quartz crucible A according to the embodiment after pulling a single crystal, and FIG. 2B is a TEM photograph showing the crystal structure near the inner surface 111a of the quartz crucible A. It is a photograph showing an electron beam diffraction pattern when a part (arrow A) was irradiated with an electron beam. FIG.
(A) is a TEM showing a crystal structure near the inner surface 111a after pulling a single crystal of the quartz crucible D according to the example.
(B) is a photograph showing an electron diffraction pattern when a part (arrow B) near the inner surface 111a of the quartz crucible D is irradiated with an electron beam.

As is apparent from FIG. 2, TE showing the vicinity of the inner surface 111a of the quartz crucible A consisting only of the amorphous portion is shown.
In the M photograph (FIG. 2 (a)), a clear contour line showing a crystal inside was not recognized, indicating that the electron diffraction pattern (FIG. 2 (b)) was concentric and amorphous. I have. On the other hand, a TEM photograph showing the vicinity of the inner surface 111a of the quartz crucible D where many crystallization regions exist (FIG. 5 (a))
In FIG. 5, a clear outline indicating the shape of the crystal grown inside is recognized, and the electron beam diffraction pattern at that portion is also a set of spots (FIG. 5B) indicating that the crystal is present.

When the ratio of the crystallized region is determined from the TEM photograph, the ratio of the area of the portion recognized as a crystal within a certain depth from the inner surface 110a (inner surface 111a) of the quartz crucible 11a is calculated. This determines the crystallization rate. Since the depth from the inner surface 110a (the inner surface 111a) varies depending on the characteristics of the quartz crucible 11a to be measured, it cannot be said generally, but it is usually preferably 20 μm, more preferably about 15 μm or less.

Since the area that can be photographed by one TEM photograph is very small, it is desirable to determine the crystallization rate using a plurality of TEM photographs and take the average value.

In the method using X-ray diffraction analysis, the material near the inner surface 110a (inner surface 111a) of the quartz crucible 11a is ground and then powdered, and the X-ray diffraction spectrum of the powder is measured. The ratio (crystallization ratio) of the crystalline silica in the sample is determined. It should be noted that some X-ray diffraction apparatuses can perform X-ray diffraction analysis even with a scraped sample piece. In that case, the X-ray diffraction analysis is performed with the sample piece as it is. At this time, the quartz crucible 11
The depth of a from the inner surface 110a can be determined with reference to the above TEM photograph, but usually it is preferably within about 20 μm. However, if the inner surface 110a has a range of 20 μm from the inner surface 110a, it may be cut off somewhat thicker, but must always be cut off with the same thickness. Examples of crystalline silica detected in the powder include cristobalite (mainly cubic system) and tridymite (monoclinic system or hexagonal system). For example, in the case of β-cristobalite, (111) Since the peak intensity of the surface is the highest, (11
1) The peak intensity of a plane peak is determined, and the crystallization rate is determined based on the peak intensity.

Specifically, for example, the peak intensity of the (111) plane obtained by X-ray diffraction analysis of the powder near the inner surface 110a of the quartz crucible 11a and the X-ray diffraction analysis of the powder obtained by pulverizing the β-cristobalite crystal (11)
1) The ratio to the peak intensity of the plane is determined, and this is defined as the crystallization ratio. Further, with respect to the quartz crucible 11a having various characteristics, the peak intensity of the (111) plane obtained by X-ray diffraction analysis of powder near the inner surface 110a of the quartz crucible 11a;
A kind of calibration curve plotting the crystallization rate obtained by analyzing the TEM photograph near the inner surface 110a of the same quartz crucible 11a is drawn, and the powder crystal obtained by performing X-ray diffraction analysis using the calibration curve is drawn. The conversion ratio may be determined.

The quartz crucible 1 obtained by the method using the image obtained by the X-ray diffraction analysis and / or the TEM
The crystallization ratio near the inner surface 110a (inner surface 111a) of 1a and the yield of the single crystal obtained by pulling up the single crystal have a clear correlation, and as the crystallization ratio increases, the crystallization ratio increases. The yield of crystals decreases. The crystallization rate and the pulling yield of the single crystal are substantially reproducible data for the same type of quartz crucible 11a. This means that the inner surface 110a (the inner surface 111a) of the quartz crucible 11a after pulling the single crystal.
When the crystallinity in the vicinity is high, crystalline silica is easily mixed into the melt 13 from the inner surface 110a of the quartz crucible 11a during the pulling of the single crystal, and dislocation occurs in the single crystal 16 due to the crystalline silica. It is easy to do. Therefore, by measuring the crystallization rate near the inner surface 110a (inner surface 111a) of the quartz crucible 11a after pulling the single crystal by the above method, when the same type (same material characteristics) quartz crucible 11a is used, It will be possible to predict the yield of crystals. Actually, by pulling the single crystal using the quartz crucible 11a of the same type, the pulled single crystal exhibits almost the expected yield.

That is, the quartz crucible 1 after pulling the single crystal
If the crystallization ratio in the vicinity of the inner surface 111a of 1a is 10% or less, the pulling yield of the single crystal is as extremely high as 98% or more when the best yield is 100%. If the crystallization ratio exceeds 10%, the rate of dislocation of the pulled single crystal sharply increases.

Accordingly, the inner surface 111 after the single crystal is pulled up.
If a single crystal is pulled up using a quartz crucible of the same type as the quartz crucible 11a in which the crystallization ratio of a is 10% or less, the pulling yield of the single crystal can be kept extremely high.

[0043]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A quartz crucible according to an embodiment and a method for evaluating the quartz crucible will be described below with reference to the drawings. In the present embodiment, the same as the single crystal pulling apparatus 10 described in “Prior art” except that the quartz crucible 11a used is changed to a quartz crucible A, a quartz crucible B, a quartz crucible C, and a quartz crucible D. The single crystal 16 was pulled using the apparatus. Tables 1 to 3 list the conditions for pulling a single crystal.

[0044]

[Table 1]

[0045]

[Table 2]

[0046]

[Table 3]

<Pull Yield of Single Crystal 16> The pull yield of single crystal 16 was determined by the X-ray topography method described in the embodiment.

<Calculation of Crystallization Ratio Near Inner Surface 111a of Quartz Crucible 11a Using TEM> Twenty samples for TEM photography were prepared for each of the quartz crucibles 11a (A to D), and TEM photographs were taken. 20 depth from inner surface 111a
The ratio of the area of the crystallization region to the entire area in the range of μm was calculated, and the average value was calculated.

FIGS. 2 to 5 show the respective quartz crucibles 11a (A to D).
One of each of the TEM photographs taken is shown. FIG. 6 shows the pulling yield of the single crystal 16 for each of the quartz crucibles 11a (A to D) and the inner surface 11 of the quartz crucible 11a (A to D) obtained from a TEM photograph.
It is the graph which showed the crystallization rate of 1a vicinity.

As is clear from the graph shown in FIG.
As the crystallization rate of the quartz crucible 11a increases, the pulling yield of the single crystal 16 decreases. In particular, when the crystallization rate exceeds 10%, the pulling yield of the single crystal 16 sharply decreases.

In order to confirm the results shown in the graph of FIG. 6, a single crystal was pulled up using a quartz crucible of the same type as the quartz crucibles 11a (A to D). The pulling yield was similar to the graph shown in FIG.

As described above, the relationship between the crystallization rate in the vicinity of the inner surface 111a of the quartz crucible 11a after pulling the single crystal and the yield of pulling the single crystal using the quartz crucible 11a is determined. , Quartz crucible 1
1a could be evaluated, and it was proved that the quartz crucible 11a could be finally evaluated by obtaining only the crystallization ratio near the inner surface 111a of the quartz crucible 11a after pulling the single crystal.

<Calculation of Crystallization Rate Near Inner Surface 111a of Quartz Crucible 11a by X-ray Diffraction Analysis> Quartz Crucible 11a
A powder was prepared by shaving the vicinity of the inner surface 111a of (A to D), and X-ray diffraction analysis was performed using the powder. 7 and 8 show charts of the X-ray diffraction spectrum of the quartz crucible 11a (A, D).

As is apparent from the X-ray diffraction spectra shown in FIGS. 7 and 8, the detected peak of the (111) plane of β-cristobalite shows the same tendency as the graph shown in FIG. Therefore, the peak intensity of the quartz crucible A (FIG. 7) is extremely small and hardly detected, while the peak intensity of the quartz crucible D (FIG. 8) is considerably large.

When the peak intensity ratio of the quartz crucible D to the other quartz crucibles 11a (A to C) was determined based on the peak intensity of the quartz crucible D, the peak intensity ratio was within the range of variation in the graph shown in FIG.

As described above, it has been proved that the crystallization ratio in the vicinity of the inner surface 111a of the quartz crucible 11a can be obtained also by the X-ray diffraction analysis.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view schematically showing a quartz crucible used in a method for evaluating a quartz crucible according to an embodiment of the present invention.

FIG. 2A is a TEM photograph showing the vicinity of the inner surface of a quartz crucible A according to an example, and FIG. 2B is an electron diffraction pattern when a part of the vicinity of the inner surface is irradiated with an electron beam. It is a photograph showing.

FIG. 3 is a TEM photograph showing the vicinity of the inner surface of a quartz crucible B according to an example.

FIG. 4 is a TEM photograph showing the vicinity of the inner surface of a quartz crucible C according to an example.

FIG. 5A is a TEM photograph showing the vicinity of the inner surface of a quartz crucible D according to an example, and FIG. 5B is an electron beam diffraction pattern when a part of the vicinity of the inner surface is irradiated with an electron beam. It is a photograph showing.

FIG. 6 is a drawing yield of a single crystal for each of the quartz crucibles A to D, and quartz crucibles A to D obtained from TEM photographs.
3 is a graph showing the crystallization ratio near the inner surface of FIG.

FIG. 7 shows a powder obtained by producing a powder near the inner surface of a quartz crucible A according to an example and performing X-ray diffraction analysis of the powder.
It is a line diffraction spectrum.

FIG. 8 shows a powder obtained by producing a powder near the inner surface of a quartz crucible D according to an example and performing X-ray diffraction analysis of the powder.
It is a line diffraction spectrum.

FIG. 9 is a cross-sectional view schematically showing a conventional single crystal pulling apparatus.

[Explanation of symbols]

 11a Quartz crucible 110a Inner surface 111a Inner surface 13 Melt 13a Solidified body 16 Single crystal

Claims (6)

(57) [Claims] 1. An amorphous quartz crucible used for pulling a single crystal, wherein a crystallization ratio in the vicinity of an inner surface in contact with a molten liquid at the end of the pulling of the single crystal is 10% or less. A quartz crucible characterized in that: 2. A method for evaluating an amorphous quartz crucible used for pulling a single crystal, comprising: determining a ratio of a crystallized region near an inner surface of the quartz crucible after pulling the single crystal; A method for evaluating a quartz crucible, comprising evaluating the quartz crucible from a correlation with the dislocation ratio of the quartz crucible. 3. The quartz crystal is obtained from a correlation between a ratio of a crystallized region near an inner surface of the quartz crucible in contact with the melt at the time of completion of pulling of the single crystal and a dislocation ratio of the pulled single crystal. 3. The crucible is evaluated.
The evaluation method of the described quartz crucible. 4. At least 2 mm from the inner surface of the quartz crucible
The method for evaluating a quartz crucible according to claim 2 or 3, wherein a range of 0 µm is set as a range for obtaining a ratio of the crystallization region. 5. A ratio of a crystallized region near the inner surface of the quartz crucible is obtained by performing X-ray diffraction analysis using a sample piece obtained by shaving the vicinity of the inner surface of the quartz crucible. The method for evaluating a quartz crucible according to any one of claims 2 to 4. 6. The quartz crystal crucible according to claim 2, wherein a ratio of a crystallization region near an inner surface of the quartz crucible is determined using an image obtained by a transmission electron microscope (TEM). 3. The method for evaluating a quartz crucible according to the item.