JP3107593B2 - Pattern inspection equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask or a fine circuit used in an X-ray exposure technique for transferring a fine circuit pattern or the like onto a semiconductor substrate using X-rays containing synchrotron radiation (SOR). The pattern shape and pattern shape of a sample to be inspected, such as a mask or a reticle used in a light exposure technique for transferring a wafer or a fine circuit pattern or the like having a pattern formed on a semiconductor substrate onto a semiconductor substrate using ultraviolet light as a light source. The present invention relates to a pattern inspection apparatus for inspecting the presence or absence of a defect or a defect.

[0002]

2. Description of the Related Art Conventionally, in order to transfer a fine circuit pattern onto a semiconductor substrate, ultraviolet light is used as a light source, and a mask having a pattern of several chips is usually used. A method is employed in which the mask pattern is reduced and transferred by changing the transfer position above. At this time, an optical system using an optical microscope or the like is used for inspecting a foreign substance on a mask or a defect of a mask pattern or inspecting a foreign substance on a wafer or a defect of a wafer pattern. However, with the miniaturization of patterns, it has become necessary to shorten the wavelength of light sources used for mask inspection and wafer pattern inspection. Further, in the conventional optical system, the resolution of the light source is reduced due to its inherent diffraction limit, and it becomes difficult to detect minute defects.

[0003] For this purpose, inspection techniques using electron beams have been developed. That is, with the miniaturization of such a pattern, an X-ray exposure technique using an X-ray including synchrotron radiation (SOR) as a light source is regarded as a promising next-generation transfer technique, and is used for inspection of an X-ray mask. Shortening the wavelength of the light source is also required at the same time.

Conventionally, when inspecting a mask or a reticle as described above, or a wafer or the like on which a specific pattern has already been formed, the object to be inspected is, for example, the mask, the reticle, or the like. And foreign matter (particles) attached to the surface of a wafer or the like, or FIG.
8, the protrusion 201, the notch 202, and the disconnection 2
03, pattern defects such as the contact portion 204, the black spot portion 205, and the white spot portion 206. The detection sensitivity is, for example, in the case of a foreign substance, (pattern size) × 1/7 to 1/5 in a bare wafer. (Pattern dimension) x 1 for patterned wafers Transfer limit for reticle or mask On the other hand, (line width) x 1/2 is generally required for pattern defects.

[0005] However while, the pattern is finer, with the being higher integration, although the detection sensitivity must be improved there, is at the detection method using light, with the miniaturization of the pattern Since there is a limit to narrowing the light beam, even if the wavelength is shortened, the detection sensitivity with visible light is at most 0.25 μm , and the size of the device that can be detected is 4
M or 16M DRAM, the detection sensitivity is at most 0.15 μm even using ultraviolet light, and the size of the device that can be detected is only 64M DRAM.
It has been difficult to detect the quality of a pattern of a device or the like that achieves high miniaturization and high integration, such as an MDRAM or a next-generation 1G DRAM.

Therefore, a method using an electron beam instead of a light beam has been considered. In such a method using an electron beam, the problem of miniaturization is small, and miniaturization is possible as compared with a light beam. However, the In the prior art relating, in the detection unit, the information detected by the detecting means have been processed in a time series manner individually, processing time of the data has a problem that it had a slow <br/>.

[0007] and may, as described above, high-miniaturization of devices such as the high integration progresses, for the data to be processing with causing the naturally also increase the number of data at the pattern inspection device according It is necessary to increase the capacity. For example, (1cm / 0.1 μm) ² = 100M pixel /
With the use of cm ² , 8 "wafers, a process of 31 G pixcel / wafer per wafer is being performed.

However, with the miniaturization of the pattern, the pattern unit for processing whether or not a defect is processed becomes smaller and the capacity in one chip increases, so that the amount of information to be inspected increases rapidly. In the conventional electron beam system, secondary electrons, reflected electrons or transmitted electrons generated by sequentially scanning a single electron beam on a mask are detected. For this reason, signals from the electron beam irradiation area finely narrowed down to detect minute defects are detected in a temporal sequence, so transmission of image information to the signal processing system takes time, and No matter how fast the processing system is, there is a disadvantage that the inspection takes a long time.

[0009]

SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned conventional disadvantages and to irradiate at least one electron beam on a predetermined area of a sample to be inspected such as a mask or a wafer so that the electron beam is emitted from the sample to be inspected. Utilizing the secondary electrons or reflected electrons, or the electrons transmitted through the sample to be inspected, it is possible to finely and accurately process the defect of the pattern of the sample to be inspected at high speed, Accordingly, an object of the present invention is to provide a pattern inspection apparatus capable of simultaneously coping with both an increase in the amount of information and an increase in the speed for processing patterns of highly miniaturized and highly integrated masks and wafers. .

[0010]

The present invention employs the following technical configuration to achieve the above object. That is, the electron beam generating means having a plurality of electron guns for generating a plurality of electron beam irradiated on the sample to be inspected at the same time, the movable support means for supporting the sample to be inspected, the information about the structure of the sample to be inspected detection means are a plurality dimensionally sequence electron detector for detecting electrons including, detection detection signal is simultaneously also each of the information electron detector outputs to process in parallel the means And a pattern inspection apparatus having processing means.

[0011]

Since the present invention employs the above-mentioned technical structure, it is possible to accurately detect even a fine pattern such as a mask or a wafer, and to transmit through a predetermined portion of the pattern, or Since the electronic information including the information on the pattern generated from the predetermined portion is processed simultaneously and in parallel, the pattern inspection can be executed in a short time.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific example of a pattern inspection apparatus according to the present invention will be described below in detail with reference to the drawings. Figure 1 A
Is a schematic diagram showing a specific example of a pattern inspection apparatus according to the present invention, the B Matazu 1 is a schematic diagram showing another specific example of a pattern inspection apparatus according to the present invention. That is, an electron beam generating means 2 having an electron gun for generating at least one electron beam accelerated and converged to a predetermined diameter to be irradiated on a sample to be inspected, a movable supporting means 3 for supporting the sample to be inspected, Detecting means 4 in which a plurality of electron detecting elements for detecting electrons containing information on the structure of the test sample are arranged in a plane, and information output from each of the electron detecting elements of the detecting means is simultaneously or in parallel. This is a pattern inspection apparatus 1 having a detection signal processing means 5 for performing processing in the following manner.

FIG . 1A is basically used for inspecting the pattern by transmitting an electron beam through a specimen to be inspected such as a mask. of B is essentially FIG 1, mainly used when is trading electron beam to a sample to be inspected such as a wafer, thereby utilizing the secondary electrons and reflection electrons generated inspecting the pattern Is what is done.

First, the electron beam generating means 2 according to the present invention
If two have been explained, the electron beam generating means, as described above, the apparatus having utilizing in light beam to the conventional method, since the limit there the resolution by the diffraction effect, higher miniaturization, In view of the fact that it is not suitable for inspecting patterns of highly integrated masks and wafers, the present invention is based on the use of electron beams, which are charged particles. Indeed, each of the electron beam generating means is formed so as to generate a fine electron beam.

That is, as an example of the electron beam generating means 2, as shown in FIG.
2, an electron optical system 25 including a deflector 23 and an electromagnetic lens 24. The movable support means 3 in the figure is a sample stage 3 for supporting a sample S to be inspected such as a mask.
1 and an XY stage 32 for moving the sample stage 31 horizontally and one-dimensionally or two-dimensionally, and further, detecting the position of the sample stage 31 and generating control information, for example, a laser interferometer 33 Is provided.

In FIG. 2, below the movable support means 3,
A detecting means 4 comprising a plurality of electron detecting elements is provided, and the detecting means 4 has a configuration capable of receiving a plurality of electron beams and processing them simultaneously or in parallel. The output of the detection means 4 is, for example, an amplifier 5
1 and a detection signal processing circuit 5 composed of a detection signal processing circuit 52.

In a conventional method of forming a pattern T on a wafer or the like, in a method using a single electron beam, a pattern T is formed on a sample such as a wafer.
In such a case, a finely focused beam is irradiated using an appropriate optical system so that the image is formed, and the electron beam is scanned along the pattern T to be formed.

On the other hand, in the present invention, it is not a method of drawing a pattern, but a test of whether or not a predetermined pattern T can be drawn accurately. Therefore, the electron optical system 25 shown in FIG. The electron beam emitted from 21 is converged to a size that is a converging lens formed of an electromagnetic lens or the like, and is radiated by a deflector 23 to an arbitrary position in a certain region on a mask . Thus those constituted as to be irradiated on a predetermined region of the electron beam focused to a fine diameter of moderately with collectively patterned as shown in A of FIG. One
That is , in the present invention, the electron beam diameter is adjusted by the electron optical system 25 so as to uniformly irradiate a predetermined area of the sample S to be inspected.

[0019] As shown in B of FIG. 3, generally the substrate 26 in the X-ray mask or the like is a thin film with a material lighter elements of atomic weight, such as SiC, gold to shield the X-ray on the substrate 26 in accordance 2 made of heavy elements such as iron and tantalum
7 is patterned on the substrate 26 in a predetermined shape. Then, when the mask S is irradiated with an electron beam, the electrons irradiated on the absorber portion 27 are scattered by heavy elements and do not pass through the mask or are largely scattered, but the substrate 26 has a size of about 2 μm at most. Because it is a thin film,
Even if the irradiated electrons are scattered, their spread is small and most of the electrons pass through the substrate 26.

[0020] Therefore, only the transmission electrons passing through the substrate portion 26 as shown in C and 4 of Figure 3 by a suitable electro-optical system 6 (A in Figure 1), are magnified image on the detection means 4,
An image of the pattern of the substrate portion is formed. Because you are detecting the transmitted electron, Oh What is the method to detect the secondary electrons and reflected electrons In the past, the error has occurred is on the X-rays would be regarded as a defect is also a little dust affected However, since the transmitted electrons are detected, the electrons are also transmitted to foreign substances such as dust that does not absorb much X-rays, and the above-described error does not occur.

In the present invention, as described above, the electron beam B generated and formed by the electron beam generator is irradiated on the sample S to be inspected such as a mask. The transmitted electrons having information are magnified and formed on the detecting means 4 via the electron optical system 6, and the pattern image T of the sample S is formed on the detecting means 4.

On the other hand, the detecting means 4 according to the present invention
As shown in FIG. 2, for example, a plurality of electron detecting elements 41 such as a semiconductor detecting element composed of a PN junction element are arranged horizontally and in a one-dimensional or two-dimensional direction. Receives the electron beam transmitted through the test sample S and generates an electric signal corresponding to the intensity of the electron beam. As the detecting means 4 according to the present invention, such as shown in FIG. 6, may be I Oh those using channel plate 42. In this case, the number of electrons jumping into the channel is multiplied, so that the S / N can be improved. The mask pattern image thus formed can be captured two-dimensionally.

Each detection signal generated from each detection element 41 is subjected to a process such as binarization in the signal processing unit 5 simultaneously and in parallel, and a storage unit or the like not shown as a digital image signal. Transmitted to and stored. Subsequent image processing is the same as that of the conventional mask inspection apparatus, and the image information of the same pattern of two chips is compared to determine a difference as a defect, or to extract a defect from comparison with design data.

In the movable support means 3 according to the present invention, as shown in FIG. 7, an inspection sample S such as an X-ray mask is fixed to a sample table 31. Sample table 3
1 is fixed to the XY stage 32, and both the sample stage 31 and the XY stage 32 are provided with holes P for transmitted electrons. The XY stage 32 is driven by an external driving motor 34 through a ball screw or the like.

In the above description, the case where the sample to be inspected for inspecting the pattern T is a mask and the electron beam B is transmitted through the sample to be inspected S has been described. as the reticle or mask or the like in which the thickness of the test specimen S is a wafer or substrate up to several mm, the electron beam B is Gataku transmitted through the sample to be inspected S, by using the secondary electrons generated by reflection The same can be applied to the case where the pattern is inspected.

[0026] If according is, as shown in B in FIG. 1, may be disposed detection means 4 between the movable supporting means 3 and the electron beam generating means 2 for supporting the inspection sample S, other configurations are those analogous to a of FIG. In such a case, it goes without saying that the electronic detection elements 41 of the detection means are arranged in the direction of the movable support means 3. Further, in the above two embodiments according to the present invention,
The electron beam B generated by the electron beam generating means 2 may be configured to scan over the sample S to be inspected in an appropriate direction by using a deflecting means, and may be movable. In combination with the movement of the support means 3, the predetermined pattern T can be inspected quickly, finely and accurately.

Next, in the present invention, apart from the electron beam generating means 2 shown in FIG. 2, a sample S to be inspected such as a mask or a wafer is miniaturized and highly integrated, and is required for inspection. In order to cope with the increase in the amount of processing data, the electron beam generating means 2 itself must also be constituted by a large number. Therefore, another aspect of the electron beam generating means according to the present invention is as follows. As shown in FIG. 8, the electron beam generating means itself is formed in a large number of fine structures, and at least the electron emitter 101 and the focusing electrode 10 are formed.
2. An electrode in which the deflection electrode 103 is formed by lamination is used.

As the electron beam generating means 2 according to the present invention, an electron emitter 101 made of, for example, silicon or hexavalent boron lanthanum is formed on a silicon substrate 100 and the surface of the same or another silicon substrate 100 is formed. Then, for example, a silicon oxide film SiO ₂ and a polycrystalline silicon film are appropriately and multi-layered, and together with the hole through which the electron beam passes by the fine processing technology, the focusing electrode 10 is formed.
2. The deflection electrode 103 is formed in the silicon substrate 100.

The electron beam B generated by the electron beam generating means according to the present invention generates an electron beam B having the same uniform diameter as that of the above-described embodiment, and B is configured to irradiate a region having a predetermined area of the sample S to be inspected.

Further, in the electron beam generating means 2 according to the present invention, only one electron beam generating means 2 may be formed, but in order to achieve the object of the present invention, As shown in FIG. 8, it is preferable that a plurality of electron beam generating means 2 are formed.

When the plurality of electron beam generating means 2 are arranged and formed, the electron beam generating means 2 may be arranged one-dimensionally or two-dimensionally. May be. Such an electron beam generating means 2
The number of arrays, the shape of the array is not particularly specified,
It can be determined as needed.

[0032] In particular, in the present invention, as shown in A of FIG. 9, the pattern T formed on the specimen S,
A plurality of electron beams B1, B2, B3, B4,... B
N at the same time, and 2
The next electron can be detected by each of the electron detection elements 41 of the detection means 4, and a large amount of fine and fine pattern information can be inspected quickly and accurately.

In the present invention, the deflection electrode 1 is further provided.
03 by using, the electron beam B1, B2 may also me Oh constitute as scan so as to scan the predetermined pattern T predetermined region in the of the test sample S. By adopting such a configuration, it is possible to easily and quickly inspect a pattern of any shape of the sample S to be inspected in cooperation with the horizontal movement operation of the movable support means 3.

In the present invention, as another example of the method of positively forming a large number of electron beams B as described above, it is possible to employ an electron beam generating means 2 having a structure as shown in FIG. is there. That is, except for the electron emitter 101 which is an electron gun in the substrate 100 described above, the fine structure substrate 11 on which the electrodes 102 and 103 having the focusing and deflecting functions are formed.
0, the microstructure substrate 110 is connected to the electron gun 2 of FIG.
An electron beam, which is disposed between a beam generating means comprising an optical system 1 and an optical system 22 and a movable supporting means 3 and which irradiates a predetermined area of a sample S to be inspected having a uniform diameter and emitted from an electron gun 21 Irradiates a plurality of electron beams on the surface of the sample S at the same time by passing the plurality of electron beams through a plurality of electron beam passage holes 111 arranged in a predetermined number and a predetermined shape provided on the microstructure substrate 110. It is possible to do.

Further, by controlling the electrodes 102 and 103 having the focusing and deflecting functions in the microstructured substrate 110 by using appropriate control means, the plurality of electron beams can be applied to the sample S to be inspected. The pattern T on the surface can be scanned simultaneously over an appropriate range.

In the present invention, a part of the pattern formed on the surface of the sample S to be inspected is inspected at a time by the above method, but the above-mentioned deflecting means is used together. This makes it possible to expand the range of patterns that can be inspected in one inspection operation. In the present invention, after the partial area of the pattern T of the sample S to be inspected is inspected at a time, the movable support means 3 is moved stepwise by the XY stage 32, and The electron beam is moved to the next irradiation area.

As shown in FIG. 11, the detector 4 has a size corresponding to each small area, and the presence or absence of transmitted electrons in each area is determined by a plurality of electron detecting means provided in the detecting means 4. By detecting by the element 41 in synchronization with the scanning of the electron beam, pattern information corresponding to each position on the mask can be obtained. 12, I Oh pattern inspection apparatus according to the present invention, showing an example of a detecting device which is used to detect secondary electrons or reflected electrons of the electron beam from the irradiation mask or the wafer to the mask or the wafer Things,
The detecting means 4 having the detecting element 41 is formed on the silicon substrate 100 having the electron beam generating means 2.
In the above-described pattern detection method, each detector element detects secondary electrons or reflected electrons from the irradiation position becomes the electron beam and the pair. Since the electron beam and detector are driven integrally, as called deterioration of S / N ratio of secondary electrons or reflected electrons caused by the detected electron scattering not only as noise to the next detector from adjacent beams There is no problem.
A detection signal from each detection element is sent to a signal processing unit, subjected to image processing such as binarization in parallel, and transmitted and stored as a digital image signal to a storage unit. The subsequent image processing is the same as that of the conventional inspection device.

In the present invention, instead of using the deflecting means in the electron beam generating means, as shown in FIG. 13, the driving means 35 is used to move the electron beam generating means 2 itself within a predetermined range. It is also possible to vibrate or move in a two-dimensional direction. By adopting such a configuration, as shown in FIG. 14, the electron beam B is applied to a predetermined area of the test sample, that is, Since the inspection can be performed by drawing an appropriate scanning pattern over the irradiation region R of each electron beam B at high speed and over the entire surface, it is possible to omit the above-described deflection optical system 25 inside the electron beam generating means. Becomes

The electron beam generating means is attached to a minute stage that vibrates at a high speed in a minute range by the driving unit 35. If a piezo piezoelectric element is used to drive the micro-stage, it is possible to vibrate the range of several hundred μm at several tens KHz at high speed.

For this purpose, two mechanisms of the above-described pattern inspection apparatus are prepared for each chip, and can be positioned in advance so that the inspection position is the same according to the size of the chip. That is, as shown in FIG. 15, the fine adjustment stages 28 and 29 in which the electron beam generating means 2 # 1 and 2 # 2 are adjusted by the inter-step distance adjustment slide 27.
To be mounted.

In the present invention, as shown in FIG. 16, the signal from each detecting element 41 is such that the sample to be inspected S1 and another sample to be inspected S2 adjacent thereto are provided on the movable support means 3, each detection information output from the detection means 41 _1, 41 ₂ corresponding to the test sample S is processed by the respective amplifiers 51 and the image memory 53 to perform the comparison processing in the detection signal processing circuit 52.

FIG. 17 shows the test sample S shown in FIG.
FIG. 9 is a plan view showing a specific example of a method for comparing between the chip patterns T1 of the sample to be inspected S1 and the chip pattern T2 of another sample to be inspected S2 adjacent to the chip pattern T1. 1 electron beam generating means 2─
1 and the second electron beam generation means 2 # 2
While scanning according to a predetermined scanning pattern,
As necessary to perform the fine vibration whether to perform the predetermined deflection to the electron beam B, row <br/> a predetermined deflection to the electron beam B with a deflecting means built into electronic beam generating means This allows the inspection to be performed by completely scanning the pattern T in a predetermined area.

[0043]

According to the present invention, at least one electron beam is irradiated on a predetermined region of a sample to be inspected, such as a mask or a wafer, and secondary electrons or reflected electrons from the sample to be inspected, or the sample to be inspected. Utilizing the electrons transmitted through the sample, it is possible to finely and accurately process the pattern defect of the sample to be inspected at a high speed.
There is provided a pattern inspection apparatus capable of simultaneously coping with both the increase in the amount of information and the increase in the speed for processing a pattern T of a highly minute and highly integrated mask, wafer, or the like. In addition, when detecting transmitted electrons with respect to a sample such as an X-ray mask, an accurate inspection can be performed without causing an error in which dust is regarded as a defect.

[Brief description of the drawings]

FIGS. 1A and 1B are block diagrams schematically showing a specific example of a pattern inspection apparatus according to the present invention.

FIG. 2 is a schematic sectional view showing a specific example of the pattern inspection apparatus according to the present invention.

3A to 3C are principle explanatory diagrams showing a pattern inspection method when the example of the pattern inspection apparatus of the present invention shown in FIG. 2 is used in the present invention.

FIG. 4 is a principle explanatory diagram showing a pattern inspection method when the example of the pattern inspection apparatus of the present invention shown in FIG. 2 is used in the present invention.

FIG. 5 is a schematic diagram showing a configuration example of a detection unit 4 used in the pattern inspection apparatus according to the present invention.

FIG. 6 is a schematic diagram showing another configuration example of the detection means 4 used in the pattern inspection apparatus according to the present invention.

FIG. 7 is a diagram showing a configuration example of a movable support means 3 used in the pattern inspection apparatus according to the present invention.

FIG. 8 is a diagram showing another example of the electron beam generating means used in the pattern inspection apparatus according to the present invention.

FIG. 9 is a diagram showing an irradiation state of an electron beam when the electron beam generating means in FIG. 8 is used.

Figure 10 is a diagram showing another example of the electron beam generating means used in the pattern inspection apparatus according to the present invention, A is a whole side view of FIG. 10, B of Matazu 10 10 3 is an enlarged view of part A of FIG.

FIG. 11 is a diagram showing an example of a case where detection is performed using a plurality of electron beams by the electron beam generating means according to the present invention.

Figure 12, in the pattern inspection apparatus according to the present invention, is a diagram illustrating a configuration example of an electron beam generating means and the detection means of the structure for detecting the reflected electrons or secondary electrons.

FIG. 13 is a diagram showing an example of a structure for vibrating or scanning an electron beam generating means in the present invention.

FIG. 14 is a diagram for explaining a scanning state of the electron beam in FIG. 13;

FIG. 15 is a diagram showing an example of a driving unit of an electron beam generating unit for simultaneously inspecting adjacent specimens to be inspected in the pattern inspection apparatus according to the present invention.

FIG. 16 is a diagram illustrating an example of an inspection determination circuit when the driving unit of the electron beam generating unit illustrated in FIG. 15 is used.

FIG. 17 is a plan view showing an example of executing a pattern inspection when using the driving means of the electron beam generating means shown in FIG. 15;

FIG. 18 is a diagram illustrating an example of a target defect portion in a pattern inspection;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Pattern inspection apparatus 2 ... Electron beam generation means 3 ... Movable support means 4 ... Detection means 5 ... Detection signal processing means 6 ... Electronic optical system 21 ... Electron gun 22, 24 ... Electromagnetic lens 23 ... Deflector 27 ... Distance between steps Adjustment slides 28, 29 ... Micro stage 31 ... Sample stage 32 ... XY stage 33 ... Laser interferometer 34 ... Drive motor 35 ... Drive unit 41 ... Electron detection element 42 ... Channel plate 51 ... Amplifier 52 ... Detection signal processing circuit 53 ... image memory 100 ... silicon substrate 101 ... electron emitter 102 ... focusing electrode 103 ... deflection electrodes 201 ... protrusions 202 ... chipped portions 203 ... disconnection unit 204 ... contact portion 205 ... black point 206 ... white point unit

──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-2-247964 (JP, A) JP-A-2-275368 (JP, A) JP-A-1-209643 (JP, A) JP-A-61- 140812 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/66

Claims (6)

(57) [Claims] 1. A electronic Bee having a plurality of electron guns for generating simultaneously a plurality of electron beams irradiated to the sample to be inspected
A beam generating means, said movable supporting means for supporting the sample to be inspected, the detection electron detector for detecting electrons that contains information about the structure of the test sample is a plurality planarly arranged
Means, pattern inspection apparatus characterized by comprising a detection signal processing means is simultaneously also each of the information electronic detection element outputs a detection means for processing in parallel. Wherein said electron beam generating means, according to claim 1, characterized in that it has a drive means for moving in a plane parallel to said electron beam generating means itself relative to the surface of the test sample the apparatus according. Wherein said detecting means, said plurality of electron detection elements, claim 1 or 2, characterized in that it is arranged and one-dimensionally parallel to the plane of the test specimen
The pattern inspection apparatus according to the above. Wherein said detecting means, said plurality of electron detection elements, claim 1 or 2, characterized in that it is and two-dimensionally arranged parallel to the plane of the test specimen
The pattern inspection apparatus according to the above. Wherein said detection signal processing means, The apparatus according to claim 1, any one of 4, characterized in that it includes processing means for image processing detection information. 6. The electron beam generating means is formed in the same or another semiconductor substrate, and includes at least an electron emitter.
Jitter, focusing electrodes, and from the claims 1 to deflection electrode is characterized in that which is formed by stacking of 5
Any pattern inspection apparatus according to an item.