JP3095582B2 - Method for manufacturing semiconductor laser device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to an optical disc,
The present invention relates to a method of manufacturing a high-power semiconductor laser device used for generating a harmonic, for exciting a solid-state laser, for a laser beam printer, for exciting an optical fiber amplifier, for optical communication, for laser processing, laser treatment, and the like.

[0002]

2. Description of the Related Art Conventionally, semiconductor lasers have been used as light sources for erasable and writable optical disks. This semiconductor laser is required to have high reliability even in a high output state of 40 to 50 mW, but higher optical output is required to increase the operation speed of the optical disk system. In addition, a high-output semiconductor laser element of 100 mW or more is required as a light source of a high-definition laser printer device or a light source for excitation of a solid-state laser device. However, at the time of a high-power operation of the semiconductor laser, there is a problem that the end face gradually deteriorates due to its strong light density, which has been a hindrance to the high output. Therefore, there has been proposed an end face growth type window laser device in which a semiconductor layer having a wider bandgap than the active layer is regrown on the emission end face of the semiconductor laser (Sharp Technical Report No. 50, p33-p36).

FIG. 6 shows a VSIS (V-channeled substrate inner stripe) laser device (Appl) which is a typical structure as a semiconductor laser device for a disk.
A perspective view of an edge growth type window laser device having a window layer made of AlGaAs formed on a cleavage plane of iedPhyssics Letters 40, p372-p374 (1982) is shown.

[0004] A method of fabricating the edge growth type window laser device will be described below.

First, a p-type semiconductor substrate 11 made of GaAs
An n-type layer 112 made of GaAs is grown to a thickness of about 1 μm on the substrate 1 by a liquid phase growth method.
After forming 1, in the second liquid phase growth, a p-type cladding layer 113 made of AlGaAs, a p-type active layer 114 made of AlGaAs, and an n-type cladding layer 115 made of AlGaAs
And an n-type cap layer 116 made of GaAs is sequentially grown. From the GaAs p-type semiconductor substrate 111 to G
VSI in each layer up to the n-type cap layer 116 composed of aAs
An S structure is formed. This laser device comprises an n-type layer 112 made of GaAs and a p-type semiconductor substrate 11 made of GaAs.
1 form an internal current confinement structure and an effective refractive index waveguide structure.
Using the p-type active layer 114 made of As as a light emitting region, stable laser oscillation can be obtained.

Next, the MOC is applied to the cleavage plane of the laser device.
Non-doped Al _0.5 Ga _{0.5 by} VD (metal organic chemical vapor deposition) method
After the window layers 131 and 132 made of As are grown to a thickness of 0.5 μm, the electrodes 1 are deposited on the n-type cap layer 116 by vapor deposition.
51 are formed, and an electrode 152 is formed on the semiconductor substrate 111.

The end face growth type window laser device is mounted on a heat sink in a package with the electrode 151 on the cap layer 116 facing down, and the electrode 152 is subjected to wire bonding. The end face growth type window laser prevents the emission end face from being deteriorated by the window layers 131 and 132 regrown on the cleavage plane, and realizes a light output of 300 mW or more which is twice or more than the conventional one at the oscillation wavelength of 830 nm. Regarding reliability, the device stably operated at an optical output of 150 mW for 2000 hours or more.

[0008]

In a general semiconductor laser device, since electrodes are formed in a wafer state, the electrodes can be separated by photolithography and etching. Therefore, after separating the electrodes,
Even if the wafer is divided into bars so as to expose the emission end face, a characteristic test or the like can be performed using the electrodes separated for each semiconductor laser element. However, if the window layer is grown on the emission end face of the bar-shaped semiconductor laser device having the electrodes formed thereon, there is a disadvantage that the metal of the electrodes is diffused at the regrowth temperature or the growth apparatus is contaminated.

For this reason, in the end face growth type window laser device, electrodes are formed after the window layer is formed on the bar-shaped semiconductor laser device. Therefore, the end face growth type window laser element performs the formation of the window layers 131 and 132, the formation of the electrodes 151 and 152, and the processing of the reflection film coating in the bar state. However, since the electrodes cannot be separated, the characteristic test and the like are not performed. This is performed after division into chip states.

As described above, it is practically difficult to separate an electrode between semiconductor laser elements by photolithography and etching for a thin bar-shaped semiconductor laser element.
A plurality of semiconductor laser devices cannot be collectively subjected to a characteristic test or the like while maintaining a bar shape. Therefore, since a characteristic test or the like is performed for each single semiconductor laser element, there is a problem that the cost is high.

It is an object of the present invention to provide a method of manufacturing a semiconductor laser device capable of performing a characteristic test and a reliability test in a bar state.

[0012]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor laser device, comprising: forming a laminated structure including an active layer and a plurality of light emitting portions on a semiconductor substrate. Performing a step of dividing the semiconductor substrate into a bar shape including a plurality of light emitting portions together with the laminated structure portion to expose an emission end face; and a semiconductor having a band gap wider than the active layer on the emission end face. Forming a layer and forming an electrode on the laminated structure, the method for manufacturing a semiconductor laser device, wherein the region of the electrode corresponding to the region between the adjacent light emitting units is irradiated with laser light. A step of removing and separating the electrode for each light emitting section.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor laser device according to the first aspect of the present invention, comprising the step of separating the electrode for each light emitting unit after forming the laminated structure. Forming a dielectric layer on a region of the laminated structure corresponding to a region from which the electrode is to be removed.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor laser device according to the first aspect, before the step of forming the laminated structure, the electrode is separated for each of the light emitting portions. Forming a dielectric layer on a region of the semiconductor substrate corresponding to a region from which the electrode is to be removed.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor laser device according to the first aspect, the step of separating the electrodes comprises removing the electrodes by removing the laminated structure portion after removing the electrodes. It is characterized by being removed by light irradiation. It is characterized by:

[0016]

According to the method for manufacturing a semiconductor laser device of the first aspect, a laminated structure including an active layer and having a plurality of light emitting portions is formed on a semiconductor substrate. Then, the semiconductor substrate is divided into a bar shape including a plurality of light-emitting portions together with the laminated structure portion to expose an emission end face. A semiconductor layer having a wider band gap than the active layer is formed on the emission end face. Then, after forming the electrode on the laminated structure, the region of the electrode corresponding to the region between the adjacent light emitting units is removed by irradiating a laser beam, and the electrode is separated for each light emitting unit. As described above, in the bar-shaped semiconductor laser device, the electrodes on the laminated structure are separated for each semiconductor laser device corresponding to the light emitting portion. Therefore, this semiconductor laser device can perform a characteristic test, a reliability test, and the like in a bar state, and can simplify operations such as a characteristic test and a reliability test performed for each single semiconductor laser device.
A low-cost semiconductor laser device can be manufactured.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor laser device according to the first aspect, after forming the laminated structure, the electrodes are separated for each light emitting unit. A dielectric layer is formed on a region of the laminated structure corresponding to a region where an electrode is to be removed in the process.
Then, electrodes are formed on the laminated structure and on the dielectric layer. At this time, the dielectric layer does not alloy with the electrode, and functions to prevent the region of the electrode to be removed in the step of separating the electrode from alloying with the laminated structure. For this reason, the electrode portion on this dielectric layer can be easily removed by laser light irradiation. That is, the electrode region corresponding to the region between the adjacent light emitting units can be removed, and the electrode can be separated for each light emitting unit. Therefore, the semiconductor laser device can perform a characteristic test, a reliability test, and the like in a bar state, and can simplify operations such as a characteristic test and a reliability test performed for each single semiconductor laser device. Can be manufactured.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor laser device according to the first aspect, before the step of forming the laminated structure, the electrode is provided for each of the light emitting portions. Forming a dielectric layer on a region of the semiconductor substrate corresponding to a region from which an electrode is to be removed in the step of separating. Then, by using a vapor phase growth method such as the MOCVD method, crystal growth on the dielectric layer is suppressed, and the laminated structure between the semiconductor laser elements is separated.
Electrodes are formed on the laminated structure and on the dielectric layer. At this time, the dielectric layer does not alloy with the electrode, and functions to prevent the region of the electrode to be removed in the step of separating the electrode from alloying with the laminated structure. For this reason, the electrode portion on this dielectric layer can be easily removed by laser light irradiation. That is, the electrode region corresponding to the region between the adjacent light emitting units is removed, and the electrode and the laminated structure unit can be completely separated for each light emitting unit. Therefore, this semiconductor laser device can reliably perform the characteristic test and the reliability test in the bar state, and can simplify the operation of the characteristic test and the reliability test for each single semiconductor laser device. Semiconductor laser device can be manufactured.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor laser device according to the first aspect, following the removal of the electrode, the laminated structure is removed by irradiating a laser beam. I do. Therefore, in the bar-shaped semiconductor laser element, the electrode and the laminated structure can be completely separated for each semiconductor laser element corresponding to the light emitting section. Therefore, the semiconductor laser device can reliably perform a characteristic test, a reliability test, and the like in the bar state. Therefore, it is possible to simplify operations such as a characteristic test and a reliability test performed for each single semiconductor laser element.
A low-cost semiconductor laser device can be manufactured.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a semiconductor laser device according to the present invention will be described in detail with reference to embodiments.

FIGS. 1A to 1F show a process chart of a method for manufacturing a semiconductor laser device according to a first embodiment of the present invention. The semiconductor laser device after dividing a wafer into bars is used as an emission end face. It is the figure seen from the side. In FIG. 1A, 1 is a semiconductor substrate, 2 is a laminated structure in which an active layer, a clad layer, and the like are formed on the semiconductor substrate 1, and 3 is disposed within the laminated structure 2 at predetermined intervals. A plurality of light emitting units. The laminated structure 2 of the semiconductor laser device is simplified by omitting parts other than the light emitting part 3. This semiconductor laser device has the same structure as the above-mentioned VSIS laser device.

First, as shown in FIG. 1A, Si ₃ N ₄ ,
A dielectric layer 4 made of Al ₂ O ₃ , AlN or SiO _{2 is} formed by a plasma CVD method or an electron beam evaporation method. The thickness of the dielectric layer 4 is about 0.5 μm.

Next, as shown in FIG. 1B, the MOCV
When a window layer (not shown) as a semiconductor layer having a higher bandgap energy than the light emitting section 3 is crystal-grown on the emission end face of the laser beam by the method D, the window layer is formed on the laminated structure section 2 and the dielectric layer 4. Layer 5 is formed.

Next, as shown in FIG. 1C, the emission end face of the bar-shaped semiconductor laser element is coated with an end face, and the window layer 5 on the laminated structure 2 and on the dielectric layer 4 is etched. To remove.

Next, as shown in FIG. 1D, an n-side electrode 6 is formed on the laminated structure 2 and the dielectric layer 4 by vapor deposition, while a p-side electrode on the back surface of the semiconductor substrate 1 is formed. The electrode 7 is formed by vapor deposition. Then, the bar-shaped semiconductor laser element is heated at about 450 ° C. for 10 minutes to perform an alloying process on the electrode 6, the laminated structure 2, and the electrode 7 and the semiconductor substrate 1.
At this time, the contact portion between the dielectric layer 4 and the electrode 6 is not alloyed.

Next, as shown in FIG. 1E, several watts of Y are applied to the region of the electrode 6 on the dielectric layer 4 indicated by the arrow in FIG.
A laser beam of an AG (yttrium / aluminum / garnet) laser is irradiated in a pulse shape to evaporate and remove the region of the electrode 6. At this time, since the laser light of the YAG laser is locally irradiated, the other parts hardly generate heat, and the irradiated parts can be accurately removed.
The electrode 6 may be removed using a CO ₂ laser, an Ar laser, an excimer laser, or the like, other than the YAG laser. Using the electrode 7 and the electrode 6 separated for each light emitting portion 3, a characteristic test and a reliability test are performed while the semiconductor laser device is in a bar state. The marked element is marked.

Next, as shown in FIG. 1 (f), the semiconductor laser device is divided into individual semiconductor laser devices, defective semiconductor laser devices are removed, and only good semiconductor laser devices that have passed the characteristic test and the reliability test are obtained. Is packaged.

The dielectric layer 4 is not necessarily required if the electrode 6 is evaporated and removed by irradiating a laser beam before the electrode 6 is alloyed.

As described above, the dielectric layer 4 does not alloy with the electrode 6, but functions to prevent the region of the electrode 6 to be removed from alloying with the laminated structure 2. For this reason, the dielectric layer 4
The upper electrode 6 can be easily removed by laser light irradiation. That is, the region of the electrode 6 corresponding to the region between the adjacent light emitting units 3 is removed, and the electrode 6 on the laminated structure 2 is provided for each semiconductor laser element corresponding to the light emitting unit 3.
Can be separated. Therefore, this semiconductor laser device can perform a characteristic test, a reliability test, and the like in a bar state, and can simplify the operation of the characteristic test, the reliability test, and the like performed for each single semiconductor laser device. A semiconductor laser device can be manufactured.

FIGS. 2A and 2B show the structure of a semiconductor laser device according to a second embodiment of the present invention. FIG. 2A is a sectional view of the semiconductor laser device, and FIG. (b) is a side view of the semiconductor laser device. 2 (a) and 2 (b) show a single semiconductor laser device after being divided from a bar state, a method of manufacturing from a wafer will be described below.

First, a wafer having a thickness of about 1.5 μm was formed on an n-type semiconductor substrate 11 made of GaAs by MOCVD.
forming an n-type cladding layer 12 of m AlGaAs;
Thereafter, an active layer 13 of non-doped AlGaAs with a thickness of about 0.06 μm, a p-type cladding layer 14 of AlGaAs with a thickness of about 0.3 μm, and an n-type current confinement layer 15 of GaAs with a thickness of about 1 μm are sequentially grown. Let it. Next, the plasma C is deposited on the n-type current confinement layer 15 made of GaAs.
The dielectric layer 16 made of Si ₃ N ₄ having a thickness of about 0.1 μm is formed by using the VD method. The width of the dielectric layer 16 was set to about 50 μm by etching. Next, a groove 17 reaching the p-type cladding layer 14 is formed in the n-type current confinement layer 15 by photolithography and etching. Then, a second p-type cladding layer 18 made of AlGaAs and a p-type cap layer 19 made of GaAs are sequentially grown again by MOCVD.

In the growth of the dielectric layer 16 and thereafter, no crystal grows on the dielectric layer 16 and so-called selective growth is performed. Thus, the p-type clad layer 18 and the p-type cap layer 19 between the semiconductor laser elements can be formed separately by the space where the crystal on the dielectric layer 16 does not grow.

Next, as shown in FIG. 3, the wafer is divided into bars, and a window made of non-doped GaAlAs is formed on the p-type cap layer 19 and on the end faces 25, 25 which are the end faces of laser light. Layer 20 is grown by MOCVD. Then, the electrode 21 is formed by vapor deposition on the window layer 20 on the p-type cap layer 19 except for the region near the end surfaces 25 and 25 shown in FIG. An electrode 22 corresponding to the electrode 21 is formed by vapor deposition. Then, the region of the electrode 21 on the dielectric layer 16 indicated by the arrow is evaporated and removed by laser light irradiation. In this way, after performing a characteristic test, a reliability test, and the like in a bar state, the semiconductor laser device is divided for each semiconductor laser device to obtain a semiconductor laser device chip shown in FIGS. 2A and 2B. Can be

In the crystal growth after the p-type cladding layer 18, if a small amount of HCl gas is mixed with the source gas, no semiconductor crystal grows on the dielectric layer 16 (Journal of Crystal Growth 124 (1992)). p235-p242).
The electrode 21 was formed on the surface of the window layer 20 by vapor deposition without removing the window layer 20 grown on the p-type cap layer 19, and the window layer 20 had a thickness of 0.5 μm or less. Because of the thinness, good ohmic characteristics were obtained by the alloying treatment.

Therefore, when a vapor phase growth method such as MOCVD is used for the crystal growth after the formation of the dielectric layer 16, the crystal growth on the dielectric layer 16 is suppressed, and the p-type cladding layer between the semiconductor laser elements is formed. 18 and the p-type cap layer 19 can be separated, and the current flowing for each semiconductor laser element during the test can be separated. The electrode 2 on the dielectric layer 16
Since the region 1 is not alloyed, it can be easily removed by laser light irradiation. That is, the region of the electrode 21 corresponding to the region between the adjacent semiconductor laser elements is removed, and the electrode 21 can be separated for each semiconductor laser element. Therefore, this semiconductor laser device can perform a characteristic test, a reliability test, and the like in a bar state, and can simplify operations such as a characteristic test and a reliability test performed for each single semiconductor laser device. A laser element can be manufactured.

FIG. 4 is a sectional view of a semiconductor laser device according to a third embodiment of the present invention. FIG. 4 shows a single semiconductor laser device after being divided from the bar state.
In the following description, a manufacturing method from a wafer will be described.

This semiconductor laser device is an AlGaInP-based red semiconductor laser device that oscillates at about 680 nm, and has a thickness of about 0.1 μm and a width of about 0.1 μm on a wafer GaAs n-type semiconductor substrate 31 using a plasma CVD method. A dielectric layer 36 of 50 μm of Si ₃ N ₄ is formed. Next, the MOCV is formed on the n-type semiconductor substrate 31 and the dielectric layer 36.
Using method D, an n-type cladding layer 32 of AlGaInP having a thickness of about 1.5 μm, an active layer 33 of non-doped GaInP having a thickness of about 0.04 μm, and an A layer having a thickness of about 1.2 μm.
A p-type cladding layer 34 of lGaInP is grown sequentially. The p-type cladding layer 3 made of AlGaInP is used.
An Si ₃ N ₄ mask layer 43 having a width of about 4 μm is formed on the substrate 4 by vapor deposition using a plasma CVD method. When the p-type cladding layer 34 of AlGaInP is removed by etching using the mask layer 43 as an etching mask while leaving a thickness of about 0.3 μm, a ridge portion 37 is formed below the mask layer 43.
Next, an n-type current confinement layer 35 made of GaAs having a thickness of about 1 μm is grown. At this time, the growth on the mask layer 43 is suppressed. Next, the mask layer 43 is removed, and the p-type cap layer 39 made of GaAs is grown again by MOCVD.

In a series of growth after the formation of the dielectric layer 36, no crystal grows on the dielectric layer 36, so-called selective growth is performed. Thus, the dielectric layer 36
The laminated structure 50 between the semiconductor laser elements can be separated by the space where the upper crystal does not grow.

Next, the wafer is divided into bar-shaped semiconductor laser devices, and a window layer 4 made of non-doped GaAlAs is formed on the emitting end face of the laser beam and the p-type cap layer 39.
0 is grown by MOCVD. Then, the electrode 41 is formed on the window layer 40 and the dielectric layer 36 on the p-type cap layer 39 by vapor deposition, while the electrode 44 is formed on the back surface of the semiconductor substrate 31 by vapor deposition. Then, the portion 42 of the electrode 41 on the dielectric layer 36 indicated by the arrow is evaporated and removed by laser light irradiation. In this way, the bar-shaped semiconductor laser device is divided into individual semiconductor laser devices after performing a characteristic test, a reliability test, and the like, and a semiconductor laser device chip is obtained.

As described above, in the bar-shaped semiconductor laser device, the electrode 41 is separated for each of the semiconductor laser devices. Therefore, this semiconductor laser device can perform a characteristic test, a reliability test, and the like in a bar state, and can simplify operations such as a characteristic test and a reliability test performed for each single semiconductor laser device. A laser element can be manufactured. In addition, since the semiconductor laser elements are completely separated from each other, it is possible to inspect a minute leak current without changing the bar-shaped semiconductor laser elements.

FIG. 5 shows a manufacturing method according to a fourth embodiment of the present invention, in which a laminated structure portion 53 having a plurality of light emitting portions 51 together with an active layer and a cladding layer is formed on a semiconductor substrate 52 as a wafer by crystal growth. Is formed. The semiconductor substrate 52 having the laminated structure 53 is divided into bar-shaped semiconductor laser elements, and after exposing the emission end faces, window layers (not shown) are grown on both emission end faces. Then, an electrode 56 is formed on the laminated structure portion 53 by vapor deposition, and an electrode 57 is formed on the back surface of the semiconductor substrate 52 by vapor deposition.
Next, the regions 58, 58, 58,... For separating the bar-shaped semiconductor laser element for each light emitting portion 51 are irradiated with a laser beam such as a CO ₂ laser, and the regions 58, 58, 58,.
The electrode 56, the laminated structure 53 and a part of the surface of the semiconductor substrate 52 are removed by evaporation. This removal depth is
Since it depends on the light density, pulse width, and wavelength of the laser light to be irradiated, it can be determined by experiments or the like. Note that the surface side of the semiconductor substrate 52 does not need to be removed as long as the laminated structure 53 can be completely removed.

As described above, in the bar-shaped semiconductor laser device, the electrode 56 and the laminated structure portion 53 can be completely separated for each semiconductor laser device corresponding to the light emitting portion 51. Therefore, the semiconductor laser device can reliably perform a characteristic test, a reliability test, and the like in the bar state. Therefore, since operations such as a characteristic test and a reliability test performed for each single semiconductor laser element can be simplified, a low-cost semiconductor laser element can be manufactured. In addition, as in the third embodiment, the semiconductor laser elements can be completely separated from each other, and a minute leak current can be inspected while the bar-shaped semiconductor laser element remains.

In the first, second, third, and fourth embodiments, an AlGaAs-based semiconductor laser device has been mainly described as an example. However, the present invention is applicable to all AlGaInP-based and GaInAsP-based semiconductor laser devices. It can be applied to a semiconductor laser device.

[0044]

As is apparent from the above, according to the method of manufacturing a semiconductor laser device of the first aspect of the present invention, a laminated structure including an active layer and a plurality of light emitting portions is formed on a semiconductor substrate. The semiconductor substrate is divided into a bar shape including a plurality of light-emitting portions together with the laminated structure portion, and an emission end surface is exposed, and a semiconductor layer having a band gap wider than the active layer is formed on the emission end surface. An electrode is formed on the structure, and the region of the electrode corresponding to the region between the adjacent light emitting units is removed by irradiating laser light to separate the electrode for each light emitting unit.

Therefore, according to the method of manufacturing a semiconductor laser device according to the first aspect of the present invention, a characteristic test, a reliability test, and the like can be performed using a bar-shaped semiconductor laser device. Since operations such as a test and a reliability test can be simplified, a low-cost semiconductor laser device can be manufactured.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor laser device according to the first aspect, wherein the electrode is separated for each of the light emitting portions after forming the laminated structure. Forming a dielectric layer on the region of the laminated structure corresponding to the region from which the electrode is to be removed.

Therefore, according to the method of manufacturing a semiconductor laser device of claim 2 of the present invention, when forming electrodes on the laminated structure and on the dielectric layer, the dielectric layer is alloyed with the electrodes. Instead, it functions to prevent alloying between the region of the electrode to be removed and the laminated structure. Therefore, the electrode portion on the dielectric layer can be easily removed by laser light irradiation. That is, the electrode region corresponding to the region between the adjacent light emitting units is removed, and the electrode can be separated for each light emitting unit. Therefore, characteristic tests and reliability tests can be performed with a bar-shaped semiconductor laser device, and operations such as a characteristic test and a reliability test performed for each single semiconductor laser device can be simplified. can do.

According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor laser device according to the first aspect of the present invention, further comprising the step of:
A step of forming a dielectric layer on a region of the semiconductor substrate corresponding to a region where the electrode is to be removed in the step of separating the electrode for each light emitting unit.

Therefore, according to the method of manufacturing a semiconductor laser device of the third aspect, when a vapor phase growth method such as the MOCVD method is used, crystal growth on the dielectric layer is suppressed, and the lamination between the semiconductor laser devices is performed. The structure can be separated, and the current flowing during the test can be separated. Further, when forming an electrode on the laminated structure and on the dielectric layer, the dielectric layer does not alloy with the electrode, and functions to prevent alloying between the region of the electrode to be removed and the laminated structure. . Therefore, the electrode portion on the dielectric layer can be easily removed by laser light irradiation. That is, the electrode region corresponding to the region between the adjacent light emitting units is removed, and the electrode can be separated for each light emitting unit. Therefore, it is possible to reliably perform the characteristic test and the reliability test with the bar-shaped semiconductor laser element, and also to inspect the minute leak current, etc., and perform the operation such as the characteristic test and the reliability test for each single semiconductor laser element. Can be simplified, and a low-cost semiconductor laser device can be manufactured.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor laser device according to the first aspect, wherein the laminated structure is irradiated with a laser beam following the removal of the electrode. It is to be removed.

Therefore, according to the method of manufacturing a semiconductor laser device of the present invention, in the bar-shaped semiconductor laser device, the electrode and the laminated structure are completely separated for each semiconductor laser device corresponding to the light emitting portion. Can be. Therefore, a characteristic test, a reliability test, and the like can be reliably performed using the bar-shaped semiconductor laser device. Therefore, since operations such as a characteristic test and a reliability test performed for each single semiconductor laser element can be simplified, a low-cost semiconductor laser element can be manufactured.

[Brief description of the drawings]

FIGS. 1A to 1F are process diagrams showing a method for manufacturing a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2A is a sectional view of a semiconductor laser device according to a second embodiment of the present invention, and FIG. 2B is a side view of the semiconductor laser device.

FIG. 3 is a sectional view of a bar-shaped semiconductor laser device according to the second embodiment.

FIG. 4 is a sectional view of a semiconductor laser device according to a third embodiment of the present invention.

FIG. 5 is a process chart showing a method for manufacturing a semiconductor laser device according to a fourth embodiment of the present invention.

FIG. 6 is a perspective view of a conventional semiconductor laser device.

[Explanation of symbols]

1, 11, 31, 52 ... semiconductor substrate, 2, 50, 53 ...
Laminated structure part, 3,51 ... light emitting part, 4,16,36 ... dielectric layer, 5,20,40 ... window layer, 6,7,21,22,4
1, 44, 56, 57 ... electrode, 12, 32 ... n-type cladding layer, 13, 33 ... active layer, 14, 18, 34 ... p-type cladding layer, 15, 35 ... n-type current confinement layer, 17 ... groove , 1
9, 39: p-type cap layer; 25, emission end face; 37, ridge portion; 43, mask layer.

Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01S 5/00-5/50

Claims (4)

(57) [Claims] 1. A step of forming a laminated structure including an active layer and a plurality of light emitting parts on a semiconductor substrate, and dividing the semiconductor substrate into a bar shape including a plurality of light emitting parts together with the laminated structure part. Exposing the emission end face;
The method of manufacturing a semiconductor laser device, comprising: forming a semiconductor layer having a band gap wider than the active layer on the emission end face; and forming an electrode on the laminated structure, A method of manufacturing a semiconductor laser device, comprising a step of removing a region of the electrode corresponding to a region between the electrodes by irradiating a laser beam to separate the electrode for each light emitting portion. 2. The method for manufacturing a semiconductor laser device according to claim 1, wherein after forming said laminated structure, said electrode corresponding to a region where said electrode is to be removed in a step of separating said electrode for each light emitting unit. A method for manufacturing a semiconductor laser device, comprising a step of forming a dielectric layer on a region of a laminated structure. 3. The method for manufacturing a semiconductor laser device according to claim 1, wherein, prior to the step of forming the laminated structure, an area where the electrode is to be removed in a step of separating the electrode for each light emitting unit is provided. Forming a dielectric layer on the corresponding region of the semiconductor substrate. 4. The method of manufacturing a semiconductor laser device according to claim 1, wherein the step of separating the electrodes comprises removing the stacked structure portion by irradiating a laser beam subsequent to the removal of the electrodes. Laser element manufacturing method.