JP3095102B2 - Inrush current prevention circuit - Google Patents

Inrush current prevention circuit

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Publication number
JP3095102B2
JP3095102B2 JP05147968A JP14796893A JP3095102B2 JP 3095102 B2 JP3095102 B2 JP 3095102B2 JP 05147968 A JP05147968 A JP 05147968A JP 14796893 A JP14796893 A JP 14796893A JP 3095102 B2 JP3095102 B2 JP 3095102B2
Authority
JP
Japan
Prior art keywords
circuit
control signal
effect transistor
gate
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP05147968A
Other languages
Japanese (ja)
Other versions
JPH075937A (en
Inventor
英男 野地
Original Assignee
エヌイーシーワイヤレスネットワークス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エヌイーシーワイヤレスネットワークス株式会社 filed Critical エヌイーシーワイヤレスネットワークス株式会社
Priority to JP05147968A priority Critical patent/JP3095102B2/en
Publication of JPH075937A publication Critical patent/JPH075937A/en
Application granted granted Critical
Publication of JP3095102B2 publication Critical patent/JP3095102B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Control Of Voltage And Current In General (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は突入電流防止回路に関
し、特にコンデンサ入力等のスイッチングレギュレータ
に直流電源を投入する際に発生する突入電流制限用抵抗
の保護及び入力電圧・電流の遮断を行うことができる改
良された突入電流防止回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inrush current prevention circuit, and more particularly to protection of an inrush current limiting resistor generated when a DC power is supplied to a switching regulator such as a capacitor input, and interruption of input voltage and current. And an improved inrush current prevention circuit.

【0002】[0002]

【従来の技術】従来、この種の突入電流防止回路は、図
4の回路本体103に示すように、1次電源1からスイ
ッチ2を投入してスイッチングレギュレータ(以下SR
という)3に電源を供給する際に、SR3の入力がコン
デンサ(図示せず)入力のために突入電流が発生する。
この突入電流を制限するために抵抗6を接続している。
一方、突入電流であるコンデンサへのチャージ電流が終
了した時点では、導通回路104が動作して抵抗6の電
圧降下回避のためにバイパス回路を形成する必要があ
る。ここで導通回路104動作の時定数はコンデンサ
(C)7,抵抗(R)9で定められ抵抗(R)13の電
位を立上げてMOSFET5のゲートG1を制御してM
OSFET5のソースS、ドレインD間を導通状態にす
る。この動作のタイムシーケンスを図5(a),
(b),(c)により説明する。図5(a)に示すよう
にスイッチ2が時間t0でオンとなり、SR3のコンデ
ンサの充電完了時間をt1aとし、MOSFET5のオ
ン時間をt2a、SR3のオン時間をt3aとする。し
かし実際には導通回路104には、特にC7の2次突入
電流があるので、導通の立上りに不確定要素があり、最
悪の場合にSR3の立上り時間後にC7への2次突入電
流がずれ込むことがある。この場合にはバイパスの動作
が遅れて抵抗R6の電圧降下が回避されなかった。
2. Description of the Related Art Conventionally, an inrush current prevention circuit of this kind is provided with a switching regulator (hereinafter referred to as SR) by turning on a switch 2 from a primary power supply 1 as shown in a circuit body 103 of FIG.
3), power is supplied to SR3, an inrush current is generated because the input of SR3 is a capacitor (not shown) input.
A resistor 6 is connected to limit the rush current.
On the other hand, when the charging current to the capacitor, which is an inrush current, ends, the conduction circuit 104 operates to form a bypass circuit to avoid a voltage drop of the resistor 6. Here, the time constant of the operation of the conduction circuit 104 is determined by the capacitor (C) 7 and the resistor (R) 9, the potential of the resistor (R) 13 is raised, and the gate G 1 of the MOSFET 5 is controlled so that M
The source S and the drain D of the OSFET 5 are made conductive. The time sequence of this operation is shown in FIG.
This will be described with reference to (b) and (c). As shown in FIG. 5A, the switch 2 is turned on at the time t0, the charging completion time of the capacitor of the SR3 is set to t1a, the ON time of the MOSFET 5 is set to t2a, and the ON time of the SR3 is set to t3a. However, since the conduction circuit 104 actually has a secondary inrush current of C7 in particular, there is an uncertain element in the rise of conduction, and in the worst case, the secondary inrush current to C7 shifts after the rise time of SR3. There is. In this case, the operation of the bypass was delayed and the voltage drop of the resistor R6 was not avoided.

【0003】[0003]

【発明が解決しようとする課題】上述した従来の突入電
流防止回路では、MOSFET5のゲートの立上り電圧
が遅れることによりMOSFETがオフ状態の時には、
突入電流制限用抵抗(R6)に、スイッチングレギュレ
ータへの入力電流が流れ、最悪の場合には焼損する欠点
があった。
In the conventional rush current prevention circuit described above, when the MOSFET is in the off state due to the delay of the rise voltage of the gate of the MOSFET 5,
The input current to the switching regulator flows through the inrush current limiting resistor (R6), and in the worst case, there is a drawback that it burns out.

【0004】[0004]

【課題を解決するための手段】本発明の突入電流防止回
路は直流電源からコンデンサ入力等の負荷への突入電流
を制限する抵抗と、この抵抗と前記直流電源との間に直
列接続される外部からの第1の制御信号を入力するゲー
トを有する第1のMOS型電界効果トランジスタと、直
列接続された前記抵抗と前記第1のMOS型電界効果ト
ランジスタと並列に接続され外部からの第2の制御信号
を入力するゲートを有する第2のMOS型電界効果トラ
ンジスタと、前記第1および第2の制御信号を供給する
バイアス回路とを有し、前記バイアス回路が前記第1お
よび第2の制御信号である接地電位を出力すると前記
1のMOS型電界効果トランジスタのゲートを制御して
導通状態にし、前記第2の制御信号を定電流素子を通し
て前記第2のMOS型電界効果トランジスタのゲートを
前記第1の制御信号より所定の遅延時間を保持して制御
し、導通状態にすることを特徴とする。
An inrush current prevention circuit according to the present invention comprises a resistor for limiting an inrush current from a DC power supply to a load such as a capacitor input, and an externally connected in series between the resistor and the DC power supply. A first MOS type field effect transistor having a gate for inputting a first control signal from the first MOS type field effect transistor , the resistor and the first MOS type field effect transistor connected in series .
A second MOS field-effect transistor having a gate connected in parallel with the transistor and receiving a second external control signal;
And Njisuta, and a bias circuit for supplying said first and second control signals, the said bias circuit outputs a ground potential which is the said first and second control signals a
And controlling the gate of the first MOS-type field effect transistor to be in a conductive state, passing the second control signal through a constant current element to set the gate of the second MOS-type field effect transistor by a predetermined delay from the first control signal. It is characterized in that it is controlled while maintaining the time to make it conductive.

【0005】[0005]

【実施例】次に本発明について図面を参照して説明す
る。図1は、本発明の一実施例の回路図、図2(a),
(b)は図1の実施例の説明図、図3(a),(b)は
図1のバイアス回路の回路図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a circuit diagram of an embodiment of the present invention, and FIGS.
FIG. 3B is an explanatory diagram of the embodiment of FIG. 1, and FIGS. 3A and 3B are circuit diagrams of the bias circuit of FIG.

【0006】図1の実施例において、抵抗6および直列
に接続されたMOSFET4により構成された電流制限
回路101は、1次電源1を投入時のスイッチングレギ
ュレータ3への突入電流は後述するように一定値に抑制
する。次に電流制限回路101に並列に接続された導通
回路102は、C7の両端電圧がMOSFET5Aゲー
ト・ソース間のオン電圧Vthに達した時間tになった
ときにMOSFET5が導通となる。この時間tはt=
(Vth/i)・Cで表される。なおCはコンデンサ7
の容量、iは定電流素子8の一定電流である。
In the embodiment shown in FIG. 1, a current limiting circuit 101 composed of a resistor 6 and a MOSFET 4 connected in series provides a constant rush current to the switching regulator 3 when the primary power supply 1 is turned on, as described later. To a value. Next, in the conduction circuit 102 connected in parallel to the current limiting circuit 101, the MOSFET 5 becomes conductive when the voltage across C7 reaches the on-voltage Vth between the gate and source of the MOSFET 5A at time t. This time t is t =
(Vth / i) · C. C is the capacitor 7
Is the constant current of the constant current element 8.

【0007】この動作を図2のタイムシーケンス説明
図、および図3の回路図により説明する。まず、図2
(a)は前述の図5(a)に相当する説明図であり、前
述した時間tを付記している。本発明の定性的な原理は
従来の電源投入用のスイッチ2に代ってバイアス回路1
2を設けて電流制限回路101のMOSFET4を初め
に動作させ、SR3への突入電流が終了した時間t1後
に速やかに導通回路102のMOSFET5Aを動作さ
せてバイパス回路を形成することにある。すなわち図2
(b)に示すとおり、SR3への電圧は突入電流の開始
時点t0から序々に立上り、SR3内のコンデンサへの
充電完了時間t1でSR3への入力電圧、すなわち定常
動作電圧になるように動作する。次に前述の動作を制御
するバイアス回路12は、第1の実施例としては図3
(a)に示すように、Tr12Aのベースにオン信号を
入力するとショート状態となり、電流制御回路101の
MOSFET4のゲートG1を直ちに制御し、抵抗R6
を介してSR3のCをチャージする。次に導通回路10
2のMOSFET5のゲートG1Aに対しては定電流ダ
イオード8を介してR9と定電流ダイオード8の定電流
に対応する分圧電圧がかかるのでC7の放電が従来例よ
り速くなり、ほぼ前述した時間tでMOSFET5Aが
導通状態になる。
This operation will be described with reference to the time sequence diagram of FIG. 2 and the circuit diagram of FIG. First, FIG.
5A is an explanatory diagram corresponding to FIG. 5A described above, and the time t described above is added. The qualitative principle of the present invention is that a bias circuit 1 is used instead of the conventional power-on switch 2.
2 to operate the MOSFET 4 of the current limiting circuit 101 first, and immediately operate the MOSFET 5A of the conduction circuit 102 after the time t1 when the inrush current to the SR 3 is completed to form a bypass circuit. That is, FIG.
As shown in (b), the voltage to SR3 gradually rises from the start time t0 of the inrush current, and operates so as to become the input voltage to SR3, that is, the steady operating voltage at the time t1 when the charging of the capacitor in SR3 is completed. . Next, the bias circuit 12 for controlling the above-described operation will be described with reference to FIG.
As shown in (a), when an ON signal is input to the base of Tr12A, a short-circuit occurs, the gate G1 of MOSFET 4 of the current control circuit 101 is immediately controlled, and the resistor R6
To charge C of SR3. Next, the conduction circuit 10
Since a divided voltage corresponding to R9 and the constant current of the constant current diode 8 is applied to the gate G1A of the second MOSFET 5 via the constant current diode 8, the discharge of C7 becomes faster than in the conventional example, and the time t substantially as described above. As a result, the MOSFET 5A becomes conductive.

【0008】図3(b)はバイアス回路12の他の回路
例であり、電源投入用のオン信号をTr12Aのベース
に印加してTr12Aをショート状態とし、電流制限回
路101のMOSFET4をオンにする。また、このオ
ン信号はディレイ回路13で時間tより少ない遅延時間
を与えてTr12Bのベースを制御してTr12Bをシ
ョート状態にする。導通回路102のMOSFET5A
のゲートG1Aは、この遅延を受けた制限電流でオンと
なりバイパス動作を行う。したがって図2(a)で説明
した時間tはディレイ回路13の調整により確実に最適
値に設定することができる。なお、バイアス回路12へ
のオン信号がない場合には、図3(a)のTr12Aお
よび図3(b)のTr12A,Tr12Bはオフとなる
ので、MOSFET4および5はともにカットオフとな
りスイッチングレギュレータ3への電流を遮断すること
ができる。
FIG. 3B is another circuit example of the bias circuit 12, in which a power-on signal is applied to the base of the Tr 12A to short-circuit the Tr 12A and turn on the MOSFET 4 of the current limiting circuit 101. . The ON signal gives a delay time shorter than the time t by the delay circuit 13 to control the base of the Tr 12B to make the Tr 12B short. MOSFET 5A of the conduction circuit 102
Gate G1A is turned on by the delayed limited current and performs a bypass operation. Therefore, the time t described in FIG. 2A can be reliably set to the optimum value by adjusting the delay circuit 13. When there is no ON signal to the bias circuit 12, Tr12A in FIG. 3A and Tr12A and Tr12B in FIG. 3B are turned off, so that both the MOSFETs 4 and 5 are cut off and the switching regulator 3 is turned off. Current can be cut off.

【0009】[0009]

【発明の効果】以上説明したように本発明は、突入電流
制限回路の抵抗に直列接続したMOSFETと、この電
流制限回路に並列に接続される導通回路と、バイアス回
路とを備えることにより、スイッチングレギュレータ動
作時の突入電流を防止することができる。さらに、バイ
アス回路をオフとすることでスイッチングレギュレータ
への入力電圧を遮断させるスイッチ回路も実現できる効
果もある。
As described above, the present invention provides switching by providing a MOSFET connected in series to a resistor of an inrush current limiting circuit, a conduction circuit connected in parallel with the current limiting circuit, and a bias circuit. It is possible to prevent an inrush current during the operation of the regulator. Further, there is an effect that a switch circuit that cuts off the input voltage to the switching regulator by turning off the bias circuit can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of one embodiment of the present invention.

【図2】図1の実施例の説明図である。FIG. 2 is an explanatory diagram of the embodiment of FIG.

【図3】図1の実施例のバイアス回路図(a)および別
の形式の回路図(b)である。
FIG. 3A is a diagram of a bias circuit of the embodiment of FIG. 1 and FIG. 3B is a circuit diagram of another type.

【図4】従来の突入電流防止回路の回路図である。FIG. 4 is a circuit diagram of a conventional inrush current prevention circuit.

【図5】従来例の説明図である。FIG. 5 is an explanatory diagram of a conventional example.

【符号の説明】[Explanation of symbols]

1 1次電源 2 スイッチ 3 スイッチングレギュレータ(SR) 4,5 MOSFET 6,9,10,11 抵抗 7 コンデンサ 8 定電流ダイオード 12 バイアス回路 13 ディレイ回路 101 電流制限回路 102 導通回路 DESCRIPTION OF SYMBOLS 1 Primary power supply 2 Switch 3 Switching regulator (SR) 4,5 MOSFET 6,9,10,11 Resistance 7 Capacitor 8 Constant current diode 12 Bias circuit 13 Delay circuit 101 Current limiting circuit 102 Conduction circuit

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 直流電源からコンデンサ入力等の負荷へ
の突入電流を制限する抵抗と、この抵抗と前記直流電源
との間に直列接続される外部からの第1の制御信号を入
力するゲートを有する第1のMOS型電解効果トランジ
スタと、直列接続された前記抵抗と前記第1のMOS型
電解効果トランジスタと並列に接続され外部からの第2
の制御信号を入力するゲートを有する第2のMOS型電
解効果トランジスタと、前記第1および第2の制御信号
を供給するバイアス回路とを有し、前記バイアス回路が
前記第1および第2の制御信号である接地電位を出力す
ると前記第1のMOS型電解効果トランジスタのゲート
を制御して導通状態にし、前記第2の制御信号を定電流
素子を通して前記第2のMOS型電解効果トランジスタ
のゲートを前記第1の制御信号より所定の遅延時間を保
持して制御し、導通状態にすることを特徴とする突入電
流防止回路。
A resistor for limiting an inrush current from a DC power supply to a load such as a capacitor input and a gate for inputting a first external control signal connected in series between the resistor and the DC power supply. First MOS-type field effect transistor having
Star and, connected in series the resistor and the first MOS type
The second externally connected parallel to the field effect transistor
MOS-type power supply having a gate for inputting a control signal of
And a bias circuit for supplying the first and second control signals. When the bias circuit outputs a ground potential as the first and second control signals, the first MOS type The gate of the field effect transistor is controlled to be in a conductive state, and the gate of the second MOS type field effect transistor is delayed by a predetermined delay from the first control signal by passing the second control signal through a constant current element. An inrush current prevention circuit characterized in that the current is maintained while being controlled to be in a conductive state.
【請求項2】 前記バイアス回路が前記第1の制御信号
に対して所定の遅延時間を前記第2の制御信号に与える
遅延回路を備えていることを特徴とする請求項1記載の
突入電流防止回路。
2. The inrush current prevention according to claim 1, wherein said bias circuit includes a delay circuit for giving a predetermined delay time to said second control signal with respect to said first control signal. circuit.
【請求項3】 前記バイアス回路の前記第1および第2
の制御信号が開放信号を出力する場合に前記第1および
第2のMOS型電界効果トランジスタの電流を遮断する
ことを特徴とする請求項1記載の突入電流防止回路。
3. The first and second of the bias circuit.
The first and, if the control signal outputs a release signal
2. The rush current prevention circuit according to claim 1, wherein the current of the second MOS type field effect transistor is cut off.
JP05147968A 1993-06-18 1993-06-18 Inrush current prevention circuit Expired - Lifetime JP3095102B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05147968A JP3095102B2 (en) 1993-06-18 1993-06-18 Inrush current prevention circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05147968A JP3095102B2 (en) 1993-06-18 1993-06-18 Inrush current prevention circuit

Publications (2)

Publication Number Publication Date
JPH075937A JPH075937A (en) 1995-01-10
JP3095102B2 true JP3095102B2 (en) 2000-10-03

Family

ID=15442176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05147968A Expired - Lifetime JP3095102B2 (en) 1993-06-18 1993-06-18 Inrush current prevention circuit

Country Status (1)

Country Link
JP (1) JP3095102B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003018822A (en) * 2001-04-24 2003-01-17 Seiko Instruments Inc Rush current limiting circuit for charge pump
US7099135B2 (en) * 2002-11-05 2006-08-29 Semiconductor Components Industries, L.L.C Integrated inrush current limiter circuit and method
US6865063B2 (en) * 2002-11-12 2005-03-08 Semiconductor Components Industries, Llc Integrated inrush current limiter circuit and method
JP4851201B2 (en) * 2005-03-18 2012-01-11 株式会社リコー Power switch circuit
US8183713B2 (en) * 2007-12-21 2012-05-22 Qualcomm Incorporated System and method of providing power using switching circuits
JP5413307B2 (en) * 2010-06-04 2014-02-12 株式会社デンソー Inverter circuit
WO2015077016A1 (en) * 2013-11-25 2015-05-28 United Technologies Corporation Method of manufacturing a hybrid cylindral structure
JP6585344B2 (en) * 2014-12-12 2019-10-02 株式会社東芝 Exciter for synchronous machine and excitation stop method
KR20200022265A (en) * 2018-08-22 2020-03-03 엘지이노텍 주식회사 A DC-DC converter for photovoltaic linked system

Also Published As

Publication number Publication date
JPH075937A (en) 1995-01-10

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