JP3095038B2 - Exposure method and apparatus, device manufacturing method using the method, and device manufactured using the exposure apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alignment apparatus suitable for application to, for example, an alignment system of a projection exposure apparatus having a projection optical system for transferring a pattern formed on a reticle (mask) onto a wafer. In particular, the present invention relates to an alignment apparatus that performs relative positioning between a reticle and a wafer by using alignment light having a wavelength band different from that of exposure light for transferring a reticle pattern onto a wafer.

[0002]

2. Description of the Related Art When manufacturing a semiconductor device or a liquid crystal display device using a photolithography technique, a projection exposure apparatus for transferring a reticle pattern onto a wafer via a projection optical system is used. In general, semiconductor devices and the like are manufactured by forming a multi-layer circuit pattern on a wafer, and therefore, in a process of transferring a new reticle pattern onto a wafer on which a pattern has already been formed, a pattern to be transferred this time and a pattern already formed are already formed. It is necessary to accurately perform the alignment with the formed pattern, that is, the alignment between the reticle and the wafer.
Recently, as the fineness of a pattern to be transferred has been further improved, it has become the most important issues to further improve the accuracy of alignment and to improve the imaging performance of a projection optical system.

In order to improve the alignment accuracy of the former, a so-called TTR (through-the-reticle) system for performing alignment through a reticle and a projection optical system is expected to achieve the highest accuracy in principle. ing. On the other hand, in order to improve the imaging performance of the latter projection optical system, recently, not only the performance of each projection lens of the projection optical system but also the fineness of a pattern to be exposed by a reticle has been increased. It has been proposed to optimize a so-called σ value which is a ratio of a numerical aperture between a secondary illumination light source such as a fly-eye lens and a projection optical system. Furthermore, by dividing the light beam from the light source into a plurality of parts and irradiating the light to a fly-eye lens or the like which is also divided into a plurality of parts, the secondary illumination light source is divided into plural parts, A projection exposure apparatus having a mechanism capable of changing the arrangement has been proposed.

FIG. 11 shows a projection exposure apparatus proposed by the present applicant in Japanese Patent Application No. Hei 3-231531 as a projection exposure apparatus capable of changing the shape and arrangement of a plurality of secondary illumination light sources. Is a light source such as a mercury lamp. Exposure light emitted from the light source 42a is an elliptical mirror 42b.
, And becomes a substantially parallel light beam by the bending mirror 43 and the input lens 44, and is incident on a first polyhedral prism 45 having a V-shaped concave section. This first
The light beam emitted in a V-shape from the polyhedral prism 45 of
The second polyhedral prism 46 having a V-shaped cross section converts the light beam into two light beams that pass through a region away from the optical axis in parallel with the optical axis.

[0005] The two light beams emitted from the second polyhedral prism 46 are incident on two second fly-eye lenses 47a and 47b arranged symmetrically with respect to the optical axis. However, the number of the second fly-eye lenses is not limited to two and is arbitrary, and it is desirable that the number of these second fly-eye lenses is equal to the number of light beams divided by the light dividing optical system including the polyhedral prisms 45 and 46. . For example, when the number of the second fly-eye lenses is four, the polyhedral prism 45
And 46, a first polyhedral prism having a pyramid-shaped concave portion and a second polyhedral prism having a quadrangular pyramid-shaped convex portion may be used.

The light beams emitted from the second fly-eye lenses 47a and 47b are guided by guide optical systems 48a and 48b, respectively.
And enters the first fly-eye lenses 49a and 49b. The first fly-eye lens and the second fly-eye lens correspond one-to-one. Then, the first fly-eye lens 4
Light beams (exposure light) emitted from 9a and 49b are formed on the lower surface side of the reticle 6 via the condenser lens 51, the bending mirror 52, and the main condenser lens 53 after passing through each opening of the variable aperture stop 50. Light the pattern. The exposure light transmitted through this pattern and the exposure light diffracted by this pattern are irradiated onto the wafer 9 through the variable aperture stop 28 of the projection optical system 21, whereby the pattern of the reticle 6 is transferred onto the wafer 9. . The variable aperture stop 28 is disposed on the pupil plane of the projection optical system 21, that is, on the Fourier transform plane with respect to the pattern forming surface of the reticle 6.

In FIG. 11, an optical system from a light source 42a to an input lens 44 is a light source 22, an optical system from a first prism body 45 to a variable aperture stop 50 is an illumination secondary light source system 23b, a condenser lens 51 to a main condenser. The optical system up to the lens 53 can be regarded as the condenser lens system 24. The pattern of the reticle 6 is illuminated by two light beams whose principal rays are respectively symmetrically inclined with respect to the optical axis of the condenser lens system 24. By illuminating the principal ray with a light beam inclined with respect to the optical axis of the condenser lens system 24, the projection optical system 2
It has been found that the resolution for a pattern in one predetermined direction can be improved and the depth of focus can be increased. Further, the inclination angle of the principal ray has an optimum value according to the line width of the pattern of the reticle 6, the pattern pitch, and the like.

Therefore, in order to change the inclination angle of the exposure light with respect to the pattern of the reticle 6, the distance between the first polyhedral prism 45 and the second polyhedral prism 46 is changed, and the second fly-eye lens 47a, A drive system 56 is provided that can also change the distance between the 47b and the first fly-eye lenses 49a, 49b from the optical axis. Reference numeral 54 denotes a main control system for controlling the operation of the entire apparatus. An operator notifies the main control system 54 of information such as the reticle line width and pattern pitch via a keyboard 55 or the like. In response to this, the main control system 54 operates the driving system 56 to set the interval between the polyhedral prisms 45 and 46 to a predetermined value, and at the same time, the second fly-eye lenses 47a and 47.
b and the distance from the optical axis of the first fly-eye lenses 49a and 49b are set to predetermined values.

In an apparatus capable of high-resolution exposure as described above, it is necessary to increase the alignment accuracy accordingly. However, for such a demand, it is expected that the alignment of the TTR method is highly accurate. . In the method of performing alignment between the reticle and the wafer by detecting the alignment mark on the wafer through the projection optical system, the alignment light having a wavelength band different from that of the exposure light is used. Care is taken to prevent the exposed resist from being exposed.

However, when performing alignment based on alignment light in a wavelength band different from the exposure light, there is a problem that chromatic aberration and chromatic aberration of magnification occur in the alignment light due to the projection optical system. Note that the lateral chromatic aberration referred to in the present application is lateral chromatic aberration, which is an off-axis light having the same wavelength as the exposure light that forms an image on a Gaussian image plane by passing through a projection optical system, and a projection optical system. By passing through the system, the chief rays of both the Gaussian image plane or the exposure light that forms an image before and after the Gaussian image plane and the alignment light of a different wavelength intersect at each intersection position when they cross on the Gaussian image plane. This is to define the deviation.

The chromatic aberration of magnification (lateral chromatic aberration) Δ
T means that the principal ray of the off-axis light having the same wavelength as the exposure light that forms an image on the Gaussian image plane by passing through the projection optical system intersects the Gaussian image plane from the intersection position. The distance to the optical axis position of the projection optical system is δ1, and the principal ray in the Gaussian image plane or in the alignment light of a different wavelength from the exposure light to be imaged before and after the Gaussian image plane by passing through the projection optical system is the Gaussian image plane If the distance from the intersection position where the intersection is made to the optical axis position of the projection optical system on the Gaussian image plane is δ2, it is defined by ΔT = | δ2-δ1 |.

The present applicant has proposed, in Japanese Patent Application No. 3-129563, an alignment apparatus which compensates for chromatic aberration and chromatic aberration of magnification of an alignment light by a projection optical system. FIG. 9 shows an alignment apparatus disclosed in Japanese Patent Application No. 3-129563. In FIG. 9, the pattern surface of the reticle 6 and the exposure surface of the wafer 9 are both side telecentric projection optical systems under exposure light. It is arranged conjugate to 21. The projection optical system 21 has good chromatic aberration corrected with respect to exposure light composed of, for example, excimer laser light, or has good aberration characteristics only at a narrow band specific wavelength. A reticle mark RM in the form of a diffraction grating for alignment is formed on the reticle 6, and a wafer mark 10 in the form of a diffraction grating for alignment is formed on the wafer 9. The wafer 9 is
It can move in the X direction and the Y direction in the horizontal plane, can rotate slightly in the horizontal plane, and can move in the Z direction parallel to the optical axis of the projection optical system 21
An illumination optical system for exposure light (not shown) is disposed above the reticle 6 and is attracted onto a wafer stage (not shown) that can move in the direction.

In the alignment system shown in FIG. 9, reference numeral 31 denotes an alignment light source for generating alignment light in a wavelength band different from that of the exposure light. As the alignment light, for example, a He-Ne laser light having a wavelength of 633 nm is used. . The light beam emitted from the light source 31 is split into a first light beam 4a and a second light beam 4b by the semi-transmissive mirror 32, and the first light beam 4a is transmitted to the semi-transmissive mirror 35 via the first acousto-optic modulator 34a. In the opposite direction, the second light beam 4 b is
And a semi-transmissive mirror 35 via the second acousto-optic modulator 34b
Head for. The acousto-optic modulators 34a and 34b are driven by high-frequency signals of frequencies f1 and f2 (f2 = f1−Δf), respectively, and the frequencies of the light beams (diffraction light) 4a and 4b passing through the acousto-optic modulators 34a and 34b respectively are Δf Only different. In this case, f1≫Δf, f2≫
Δf is desirable, and the upper limit of Δf is determined by the responsiveness of the photoelectric detectors 41a to 41c for alignment described later.

The light beams 4a and 4 reflected by the transflective mirror 35
b is a reference reference diffraction grating 37 formed at a predetermined pitch by a condenser lens 36 in a direction parallel to the plane of FIG.
Focused on top. An interference fringe flowing on the diffraction grating 37 is formed by the two light beams 4a and 4b having a relative frequency difference Δf, and the diffracted light passing through the diffraction grating 37 is incident on the photoelectric detector 38. The reference signal output from the photoelectric detector 38 is a sinusoidal AC signal (optical beat signal) corresponding to the period of the change in brightness of the interference fringes flowing on the diffraction grating 37.

On the other hand, the two light beams 4a and 4b transmitted through the semi-transmissive mirror 35 are focused on a reticle mark RM provided outside the exposure area of the reticle 6 via an objective lens 39 for alignment and a mirror 40. . At this time, the difference Δf between the frequencies of the light beams 4a and 4b is displayed on the reticle mark RM.
An interference fringe that changes so as to flow is formed. The reticle mark RM is formed by a diffraction grating formed at a predetermined pitch in a direction parallel to the paper surface of FIG.
A reticle window RW for transmitting alignment light is formed at a position adjacent to M.

The luminous fluxes 4a and 4b focused on the reticle 6 by the objective lens 39 of the alignment system cover the reticle 6 at a predetermined intersection angle so as to simultaneously cover not only the reticle mark RM but also the reticle window RW. Light from the direction. Then, one light beam 4a has the reticle mark R
When M is irradiated obliquely, the 0th-order light is reflected in a direction (specular reflection direction) following the optical path of the other light beam 4b in the reverse direction, and a + 1st-order diffracted light is generated in the direction following the optical path of the light beam 4a in the opposite direction. Similarly, when the other light beam 4b obliquely irradiates the reticle mark RM, the 0th-order light is reflected in the direction that follows the optical path of the one light beam 4a in the reverse direction, and the −1st-order diffracted light is reflected in the direction that follows the optical path of the light beam 4b in the opposite direction. Occurs.

In this case, the light beams 4a and 4b incident on the reticle mark exist in a plane parallel to the paper surface of FIG. 9, and the incident angles of the light beams 4a and 4b with respect to the reticle mark are defined as θ _R and −θ _R , respectively. Assuming that the pitch in the direction parallel to the plane of FIG. 9 in FIG. 9 is P _R and the wavelength of the light beams 4a and 4b is λ (however, strictly, it is slightly deviated from λ), s
The incident angle and the pitch are set so as to satisfy the relationship of in2θ _R = λ / P _R.

Accordingly, the + 1st-order light of one light beam 4a and the 0th-order light of the other light beam 4b from the reticle mark RM return to the semi-transmissive mirror 35 via the mirror 40 and the objective lens 39 in parallel to each other, and The photoelectric detector 41a reflected by the transmission mirror 35 and arranged at a position conjugate with the pupil of the objective lens 39
Incident on. Similarly, the 0th-order light of one light beam 4a and the -1st-order light of the other light beam 4b from the reticle mark RM return to the semi-transmissive mirror 35 via the mirror 40 and the objective lens 39 in parallel with each other. Photoelectric detector 41b reflected by mirror 35 and arranged at a position conjugate with the pupil of objective lens 39
Incident on. These photoelectric detectors 41a and 41b detect an optical beat signal corresponding to the position of the reticle mark RM.

Next, the light beams 4a and 4b that illuminate the reticle window RW adjacent to the reticle mark RM from the two directions at a predetermined intersection angle (2θ _R ) pass through the reticle window RW as it is and Incident off the axis. Although the projection optical system 21 is designed so that chromatic aberration is sufficiently reduced with respect to the wavelength of the exposure light, large chromatic aberration is generated with respect to alignment light in a wavelength band different from that of the exposure light.
In view of this, the transparent member 5 is disposed on the pupil plane of the projection optical system 21, and different pitches are provided on the transparent member 5 along the X direction, which is a measurement direction passing through the center of the optical axis of the projection optical system 21. The phase type diffraction gratings 1a to 1c as three correction optical elements for deflection are provided. The diffraction grating 1c is arranged on the optical axis of the projection optical system 21, and the diffraction gratings 1a and 1b are arranged symmetrically with respect to the optical axis of the projection optical system 21. In addition, each diffraction grating 1a
To 1c are arranged along the X direction such that the pitch of the diffraction gratings becomes closer in the order of the diffraction gratings 1b, 1c, and 1a.

In FIG. 9, light beams 4a and 4b which are incident on the projection optical system 21 from off-axis and enter the pupil (entrance pupil) of the projection optical system 21 are diffraction gratings 1b and 1b, respectively.
As a result, the wafer mark 10 formed on the wafer 9 is deflected (diffracted) so as to be corrected by the correction angles θ1 and θ2, and is irradiated from two directions at a predetermined intersection angle. An interference fringe that changes so as to flow at the frequency Δf of the difference between the two light beams is also formed on the wafer mark 10. The wafer mark 10 is formed of a diffraction grating formed at a predetermined pitch in the X direction, which is the measurement direction, on a street line outside each shot area.

As described above, the light beams 4a and 4b irradiate the wafer mark 10 at a predetermined crossing angle, so that the -1st-order light of one light beam 4a and the + 1st-order light of the other light beam 4b are exposed to the wafer 9. It occurs in the direction normal to the plane (the direction parallel to the optical axis of the projection optical system 21). In this case, the wafer mark 1
The pitch of 0 is P _W , the wavelength of the alignment light is λ, and the light flux 4
When the intersection angle of a and 4b on the wafer is θ _W , s
The pitch and the intersection angle are set so as to satisfy the relationship of inθ _W = λ / P _W.

The -1st-order light of the light beam 4a and the -1st-order light of the light beam 4b generated in the normal direction of the wafer mark 10 travel along the optical path of the principal ray of the projection optical system 21 as beat interference light 4c in parallel with each other. After being deflected (diffracted) by the correction angle θ3 by the diffraction grating 1c provided at the center of the pupil of the projection optical system 21, the light again passes through the reticle window RW of the reticle 6, the mirror 40, the objective lens 39, and the semi-transmissive mirror 35. The light enters the photoelectric detector 41c arranged at a position conjugate with the pupil of the objective lens 39. In the photoelectric detector 41c, an optical beat signal corresponding to the position of the wafer mark 10 is detected. Reticle mark R output from photoelectric detectors 41a and 41b described above.
The relative positional relationship between the reticle 6 and the wafer 9 can be accurately detected from the signal including the position information of M and the signal including the position information of the wafer mark 10 output from the photoelectric detector 41c.

This detection method is called a so-called optical heterodyne method. If the positional deviation between the reticle 6 and the wafer 9 from the reference state is within one pitch of the reticle mark RM and within １ ／ pitch of the wafer mark 10, In addition, even in a stationary state, the amount of displacement can be accurately detected with high resolution. Therefore, it is suitable for use as a position signal when a closed-loop position servo is applied so that a minute positional deviation does not occur during the exposure of the pattern of the reticle 6 to the resist on the wafer 9. In this detection method, the alignment is completed by moving the reticle 6 or the wafer 9 such that the phase of the optical beat signal from the reticle mark RM and the phase of the optical beat signal from the wafer mark 10 become a predetermined value. Then, servo lock can be applied so that the reticle 6 and the wafer 9 do not relatively move at the alignment position.

As described above, in the alignment apparatus shown in FIG. 9, the phase type diffraction gratings 1a, 1b, 1c disposed on the transparent member 5 provided substantially at the pupil position of the projection lens 21.
Irradiation light for alignment (light fluxes 4a, 4a)
b) and detection light (beat interference light 4c) correspond to chromatic aberration and chromatic aberration of magnification generated in the projection optical system 21. Note that a correction optical element such as a deflection prism can be used in place of the phase type diffraction gratings 1a to 1c.

The correction optical element such as a phase type diffraction grating (phase grating) is disclosed in Japanese Patent Application No. Hei 3-12596.
As described in No. 3, a device is devised so as not to affect the wavefront of the exposure light and thereby adversely affect the imaging performance of the projection optical system 21. For example, in the case of a phase grating, the etching depth of the phase grating is set to an integral multiple of the wavelength of the exposure light, or a thin film having a wavelength selection function of reflecting the exposure light on the phase grating and transmitting the alignment light. Is formed by vapor deposition or the like.

Some conventional projection exposure apparatuses have a mechanism capable of changing the size of a secondary illumination light source and the numerical aperture of a projection optical system. FIG. 10 shows a projection exposure apparatus having such a variable mechanism. In FIG. 10, exposure light emitted from a light source 22 enters a secondary illumination light source system 23a composed of a fly-eye lens. System 2
A secondary light source in the form of a surface light source is formed on the emission side of 3a. Further, a variable aperture stop 27 is disposed on the secondary light source forming surface of the secondary illumination light source system 23a, and the opening of the variable aperture stop 27 can be regarded as a secondary illumination light source. By adjusting, the size of the illumination secondary light source can be adjusted. Exposure light emitted from the illumination secondary light source is appropriately condensed by the condenser lens system 24 and illuminates the pattern area of the reticle 6.

The pattern of the reticle 6 is transferred to the exposure surface of the wafer 9 via the projection optical system 21. A variable aperture stop 28 is arranged almost on the pupil plane of the projection optical system 21. The aperture diameter of the variable aperture stop 28 changes in proportion to the numerical aperture of the projection optical system 21. Reference numeral 26 denotes a main control system for controlling the imaging conditions.
Through 0, the shapes of the apertures of the variable aperture stops 27 and 28 are set to a predetermined state. In this case, under the exposure light, the arrangement surface of the variable aperture stop 27 on the side of the secondary illumination light source system 23a and the pupil surface of the projection optical system 21 (substantially equal to the surface on which the variable aperture stop 28 is arranged) are conjugate. The aperture of the variable aperture stop 27, that is, a direct image of the illumination secondary light source is formed on the pupil plane of the projection optical system 21. Therefore, the variable aperture stop 27
, The size of the direct image of the secondary illumination light source on the pupil plane of the projection optical system 21 also changes.

[0028]

In the projection exposure apparatus according to the prior application of the present applicant, for example, a transparent member (such as quartz) 5 provided on the pupil plane of the projection optical system 21 in FIG.
The following contrivance has been made so that the correction optical elements such as the phase gratings 1a to 1c do not disturb the wavefront of the exposure light. By making the etching depth of the phase grating an integral multiple of the wavelength of the exposure light, the phase grating does not affect the exposure light. A thin film having a wavelength selecting function of reflecting exposure light and transmitting alignment light is formed on a phase grating or the like by vapor deposition or the like.

However, in the former method, there is a limit in the control accuracy of the etching depth, and in general, the surface on the etched transparent member cannot be completely smooth. Has the disadvantage of affecting The effect of this phenomenon on the imaging performance of the projection optical system is that the luminous flux of the direct image of the illumination light source having a high intensity is higher than that of the imperfect phase described above, than the component of the light whose intensity is diffracted by the pattern on the reticle. It works more when passing through a correction optical element such as a grating.

Also in the latter method, when a direct image of an illumination light source having a particularly high intensity is applied to a correction optical element on which a thin film for reflecting the exposure light is applied, the reflected light is again applied to the projection optical system. There is an inconvenience that the light is reflected by a projection lens surface or a reticle surface inside and reaches the wafer surface, causing a so-called flare or the like. Further, the lack of a component having a high intensity in the light beam involved in the image formation has a disadvantage that the image forming ability of the projection optical system may be adversely affected.

According to the present invention, in view of the above, when a correction optical element for correcting chromatic aberration and chromatic aberration of magnification with respect to alignment light of a projection optical system is used, the imaging performance of the projection optical system is improved by these correction optical elements. Dew that does not deteriorate
It is an object to provide an optical method and an exposure apparatus . Further
However, the present invention provides a method for manufacturing a device using such an exposure method.
Manufacturing method and device manufactured using such an exposure apparatus
It is also intended to provide chairs.

[0032]

An exposure apparatus according to the present invention.
Exposes a predetermined pattern formed on the mask (6) with an exposure light
Illuminated by the projection optical system (21).
An exposure apparatus for exposing a plate (9), wherein
An illumination system (23, 24, 50) for irradiating the exposure light;
A substantial pupil plane of the projection optics in the illumination system (3)
On the plane almost conjugate with the plane (placement plane of the defining means (50))
The intensity distribution of the exposure light, including the optical axis of the illumination system.
One region (a region conjugate to the arrangement region of the correction means (12))
In the second region not including the optical axis,
Different from the defining means (50) for defining the exposure light
Uses alignment light in the wavelength band and passes through the projection optical system.
Detecting means for detecting marks formed on the substrate
(11) and on the substantial pupil plane of the projection optics,
What are the regions (13a to 13d) almost conjugate to the second region?
It is arranged on a different area (the arrangement area of the correction means (12)).
To correct the chromatic aberration generated for the alignment light
Correction means (12). Also book
The device according to the invention is based on the detection result of the detection means.
And the relative positional relationship with the mask has been adjusted
The predetermined pattern is formed on the substrate by using the exposure apparatus of the present invention.
And is manufactured through a process of transferring. next,
The exposure method according to the present invention comprises the steps of:
A predetermined pattern is illuminated with exposure light, and the projection optical system (21) is
Exposure method for exposing the substrate (9) with the exposure light through
And an illumination system (2) for irradiating the mask with the exposure light.
3, 24, 50), the substantial pupil plane of the projection optics
On the plane almost conjugate with the plane (placement plane of the defining means (50))
The intensity distribution of the exposure light, including the optical axis of the illumination system.
1 region (region conjugate to the arrangement region of the correction member (12))
In the second region not including the optical axis,
Alignment in a wavelength band different from the exposure light
Formed on its substrate through its projection optics using light
Of the projected mark, and the effective pupil plane of the projection optical system
The upper region (13a-13) substantially conjugate to the second region
On an area different from d) (area where correction member (12) is arranged)
To correct the chromatic aberration generated for the alignment light
And a correction member (12) to be provided. Also book
The method of manufacturing a device according to the invention comprises the steps of:
Relative to the mask based on the detection result of the
The predetermined pattern is placed on the substrate whose positional relationship has been adjusted.
Transfer using the exposure method of the present invention.
It is.

[0033]

Here, the direct image (2 , 13a to 13d ) usually means an image of the mask (6) by the zero-order light, but when the mask (6) is a so-called phase shift reticle or the like, the direct image (2 , 13a to 13d ) is used. The image means an intensity distribution image on a pupil plane of the projection optical system formed by diffracted light of a predetermined order, which is light having a strong amount from a phase shift reticle or the like.

[0035]

[0036]

[0037]

According to the present invention, the pupil plane of the projection optical system (21) is
Exposure light intensity distribution on a surface in a nearly conjugate illumination system
Is smaller than the first region including the optical axis of the illumination system.
A lighting method that enlarges the second area that does not include
Corrects ( cancels ) chromatic aberration (on-axis chromatic aberration and chromatic aberration of magnification) generated with respect to alignment light during exposure using
Correcting means (12) for performing the correction on the pupil plane of the projection optical system.
Regions other than the regions (13a to 13d) substantially conjugate to the two regions
(Arrangement area of the correction means (12)).
Therefore, the region where the intensity of the exposure light is large does not pass through the correction means . Therefore , the imaging performance of the projection optical system (21) hardly deteriorates.

[0038]

[0039]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. In the present embodiment, in the projection exposure apparatus of FIG. 10, an aperture stop having a fixed aperture diameter is used instead of the variable aperture stop 27, that is, an illumination secondary light source having a single area is used. In this case, the present invention is applied.

FIG. 1 shows the arrangement of a correction optical element such as a phase type diffraction grating formed on a transparent member arranged on the pupil plane of the projection optical system of the present embodiment. A region 3 surrounded by the circumference is a region within the pupil plane of the projection optical system and limited by the aperture stop. That is, assuming that the numerical aperture of the projection optical system is NAp, the area 3 in numerical aperture units is used.
Is equal to its numerical aperture NAp. The transparent member is formed of a circular parallel flat plate slightly larger than the region 3.

A hatched area 2 surrounded by a two-dot chain line inside the area 3 is an area where a direct image (Fourier transform image) of the secondary illumination light source is formed. Illumination optical system, ie, FIG.
NA of the exit side of the condenser lens system 24
i, assuming that the reduction magnification of the projection optical system is α, the diameter of the area 2 in units of numerical aperture is equal to α · NAi. The correction optical element 1 collectively shows 12 correction optical elements. In this example, the 12 correction optical elements 1 are arranged outside the area 2 where a direct image of the secondary illumination light source is formed. These 12
The three correction optical elements 1 are arranged three by three along each side of a square slightly larger than the square circumscribing the area 2. The twelve correction optical elements 1 are grouped into three groups: a correction optical element at the center of one side of the square and a correction optical element on both sides of the opposite side, and are shown by the same figure. The three correction optical elements belong to the same group. For example, three correction optical elements 1a to 1c indicated by black circles belong to the same group.

Referring to FIG. 2, an example of the configuration at the time of alignment in this embodiment will be described. In FIG. 2, FIG.
The same reference numerals are given to the portions corresponding to and the detailed description thereof will be omitted. As shown in FIG. 2, on the pupil plane of the projection optical system 21, a transparent member 5 on which twelve correction optical elements are formed is arranged, and the projection optical system 21 forms a rectangular shape of the reticle 6 under exposure light. The image of the pattern inside the exposure area 7 is transferred to the resist on the wafer 9. As shown in FIG. 3C, a reticle mark 8b composed of a diffraction grating and an alignment mark 8 composed of a window 8a are formed adjacent to the four sides surrounding the exposure area 7 of the reticle 6, respectively. .

Returning to FIG. 2, one alignment microscope 11 (a total of four alignment marks) is prepared for each alignment mark adjacent to each side surrounding the exposure area 7. One of the four sides surrounding the exposure area 7 of the reticle 6
An example of the alignment operation when the alignment mark of the region C2 adjacent to the side is used will be described. The area C2
The three correction optical elements 1a to 1c indicated by black circles on the transparent member 5 are used for the alignment mark. Then, the alignment marks 11 in the region C2 on the reticle 6 are irradiated with the two alignment light beams 4a and 4b at a predetermined intersection angle from the alignment microscope 11.
The frequencies of the two light beams 4a and 4b are different from each other.

In this case, the luminous fluxes 4a and 4b transmitted through the window of the alignment mark in the area C2 enter the correction optical elements 1a and 1b on the transparent member 5 inside the projection optical system 21 to correct aberration. Will be That is, the light beam 4a deflected (diffracted) by the correction optical elements 1a and 1b, respectively.
And 4b are applied to a diffraction grating wafer mark 10 near a predetermined shot area of the wafer 9. Then, the beat interference light 4c composed of two diffracted lights from the wafer mark 10 is incident on the correction optical element 1c on the transparent member 5, and the beat interference light 4c corrected for aberration by the correction optical element 1c. Is transmitted through the window in the area C2 of the reticle 6 and enters the alignment microscope 11. Therefore, the two correction optical elements 1a and 1b are the correction optical elements for irradiation,
One correction optical element 1c can be regarded as a correction optical element for detection. The detailed detection method of the heterodyne method is the same as the method described for the alignment apparatus in FIG.

At this time, as shown in FIG. 2, it is assumed that the positional relationship between the reticle 6 and the wafer 9 is measured in the sagittal direction of the projection optical system 21 (the direction of arrow A2). The light beams 4a and 4b for alignment are shown in FIG.
As shown in (a), the projection optical system 21 is inclined at an angle θr ₁ in the meridional direction. The angle θr ₁ is
As shown in FIG. 1, the projection optical system 2 displayed in numerical aperture units
The coordinate d on the pupil plane (Fourier plane) (the distance from the center is referred to as “pupil coordinate”) d and the reduction magnification α of the projection optical system 21 are given by the following equation. θr ₁ = sin ⁻¹ (d / α) (1)

As shown in FIG. 3B, the alignment light beams 4a and 4b are inclined in the sagittal direction of the projection optical system 21 in directions opposite to each other at an angle θr ₂ and are incident on the alignment marks of the reticle 6. doing. The inclination angle θr _{2 in} the sagittal direction is determined by the wafer mark 10 on the wafer 9.
Using the grating pitch p and the wavelength λ of the alignment light,
It is given by the following equation. θr ₂ × α = sin ^-1 (λ / p) (2)

As shown in FIG. 1, if the distance on the pupil plane between the two correction optical elements 1a and 1b for incident light expressed in numerical aperture units is d ', the following relationship is obtained. d ′ / 2 = sin (θr ₂ × α) (3) That is, by tilting the alignment light incident on the reticle 6 by the angle θr ₁ in the meridional direction which is the non-measurement direction, the pupil plane in the projection optical system 21 is tilted. The position of the placed correction optic can be shifted away from the center in proportion to the sine of its angle θr ₁ .

Therefore, in order to prevent the position of the correction optical element 1 from overlapping with the direct image of the secondary illumination light source in the area 2, the numerical aperture NAi of the condenser lens system 24 of the secondary illumination light source must be The alignment system may be configured so that the following equation is satisfied. NAi / α <sin θr ₁ (4) However, it is actually necessary to consider the size of the correction optical element 1.

Next, a second embodiment of the present invention will be described with reference to FIGS. In the present embodiment, as shown in FIG. 11, the present invention is applied to a projection exposure apparatus in which a secondary illumination light source is divided into a plurality of parts. However, in the case of FIG. 11, the secondary illumination light source is divided into two, but in this example, the secondary illumination light source is divided into four. 4 to 6, parts corresponding to those in FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 4 shows the arrangement of correction optical elements formed on a transparent member disposed on the pupil plane of the projection optical system of the second embodiment. In FIG. This is an area within the pupil plane and limited by the aperture stop. Inside the area 3, four independent rectangular areas 13 a to 13 surrounded by two-dot chain lines and hatched.
d is a region where a direct image (Fourier transform image) of the secondary illumination light source is formed. In this example, no direct image of the secondary illumination light source is formed in a region around the optical axis. Also, 12 is 1
The two correction optical elements are shown collectively, and the twelve correction optical elements 12 are used to form a direct image of the illumination secondary light source.
It arrange | positions in the area | region outside this area | region 13a-13d.

In the present embodiment, these twelve correction optical elements 12 are arranged axially symmetric along two orthogonal sides in a region surrounded by the regions 13a to 13d. Each of the twelve correction optical elements 12 includes three correction optical elements near an intersection of two orthogonal sides and two correction optical elements on both sides of one side of the two sides. The three correction optical elements shown by the same figure belong to the same group. For example, the three correction optical elements 12a to 12c indicated by black circles belong to the same group.

An example of the configuration at the time of alignment in this embodiment will be described with reference to FIG. As shown in FIG. 5, on the pupil plane of the projection optical system 21, a transparent member 5 in which twelve correction optical elements are formed is arranged. In addition, adjacent to each of the four sides surrounding the exposure area 7 of the reticle 6, FIG.
As shown in (c), a reticle mark 8b made of a diffraction grating and an alignment mark 8 made of a window 8a are formed.

In FIG. 5, one (a total of four) alignment microscopes 11 are prepared for each alignment mark adjacent to each side surrounding the exposure area 7. One of the four sides surrounding the exposure area 7 of the reticle 6
An example of the alignment operation when the alignment mark of the region C5 adjacent to the side is used will be described. The area C5
For the alignment mark, three correction optical elements 12a to 12c indicated by black circles on the transparent member 5 are used. Then, from the alignment microscope 11 to the reticle 6
Two alignment light beams 4a and 4b are applied to the alignment mark in the upper region C5 at a predetermined intersection angle. The frequencies of the two light beams 4a and 4b are different from each other.

In this case, the light beams 4a and 4b transmitted through the window of the alignment mark in the area C5 are incident on the correction optical elements 12a and 12b on the transparent member 5 inside the projection optical system 21, respectively, and the aberration is corrected. Will be That is, the light beams 4a and 4b deflected (diffracted) by the correction optical elements 12a and 12b, respectively, irradiate a diffraction grating wafer mark 10 near a predetermined shot area of the wafer 9. Then, the beat interference light 4c composed of two diffracted lights from the wafer mark 10 is incident on the correction optical element 12c at the center on the transparent member 5, and aberration correction (angle deflection) is performed by the correction optical element 12c. The performed beat interference light 4c passes through the window in the area C5 of the reticle 6, and enters the alignment microscope 11. Therefore, the two correction optical elements 12
a and 12b can be regarded as correction optical elements for irradiation, and one correction optical element 12c can be regarded as a correction optical element for detection.

At this time, as shown in FIG. 5, it is assumed that the positional relationship between the reticle 6 and the wafer 9 is measured in the sagittal direction of the projection optical system 21 (the direction of arrow A5). The light beams 4a and 4b for alignment are shown in FIG.
As shown in (a), the light enters the meridional direction of the projection optical system 21 vertically. Further, as shown in FIG. 6B, the light beams 4a and 4b for alignment are incident on the alignment mark of the reticle 6 while being inclined in the sagittal direction of the projection optical system 21 in directions opposite to each other at an angle θr ₂ . . The wavelength λ of the alignment light with respect to the inclination angle θr _{2 in} the sagittal direction, the lattice pitch p of the wafer mark 10 on the wafer 9, and the distance on the pupil plane of the two correction optical elements for the incident light expressed in units of numerical aperture. The relationship with the quantity such as d '
This is the same as in the embodiment.

That is, as shown in FIG. 4, when the direct image of the secondary illumination light source is in the divided areas 13a to 13d, the alignment light is incident vertically without tilting in the meridional direction. If the alignment system is configured to perform the correction, the correction optical element 12 can be gathered on the pupil plane of the projection optical system 21 near the center thereof. This makes it possible to arrange the direct image (Fourier image) of the secondary illumination light source and the correction optical elements 12 so as not to overlap.

Next, a third embodiment of the present invention will be described with reference to FIG. In the present embodiment, as shown in FIG. 10, the present invention is applied when a variable aperture stop 27 is used in an illumination optical system. FIG. 7 shows an arrangement of correction optical elements formed on a transparent member arranged on a pupil plane of the projection optical system according to the third embodiment.
Region 3 is a region (pupil) within the pupil plane of the projection optical system and restricted by the aperture stop on the projection optical system side. Area 3
Inside, the area 2 surrounded by the two-dot chain line and shaded is the area where the direct image (Fourier image) of the secondary illumination light source is formed. However, unlike the embodiment of FIG. 1, the region 2 is variable in the radial direction in this embodiment. In FIG. 7, the variable range of the numerical aperture of the illumination secondary light source is indicated by an arrow as a range in which a two-dot chain line representing the boundary of the outer periphery of the Fourier image moves.

Reference numeral 15 denotes 12 correction optical elements as a whole, and these correction optical elements 15 are arranged near the maximum range of the area 2. The role of the correction optical element and the configuration method of the alignment system are the same as in the first embodiment. In this case, it is desirable that the correction optical element 15 is arranged at a place where the pupil coordinates are as large as possible, that is, at an outer side far from the center. This is because when the numerical aperture of the secondary illumination light source is changed, the case where the Fourier image and the correction optical element overlap with each other is reduced.

In practice, the pupil coordinates of the correction optical element cannot be increased without limit. This is because if the pupil coordinates are increased indefinitely, the following inconvenience occurs. Increasing the pupil coordinates of the correction optical element increases the angle of inclination of the alignment light in the meridional direction, and thus increases the diameter of the objective lens of the alignment microscope, and the four alignment microscopes come into contact with each other. Cannot be placed. If the angle of the alignment light in the meridional direction is too large, the alignment light is vignetted in the pellicle frame that may be attached to the reticle for the purpose of preventing dust from adhering.

However, if the correction optical element 15 is arranged as far as possible outside, even if the correction optical element 15 may overlap with its direct image in the variable range of the numerical aperture of the secondary illumination light source, In that case, the size (numerical aperture, area in the pupil plane) of the secondary illumination light source is also large. Therefore, if the overlap between the correction optical element 15 and the direct image of the illumination secondary light source in the area 2 is viewed in terms of the area ratio, the area ratio of the overlapping portion is smaller than when the numerical aperture of the illumination secondary light source is small. Thus, the influence of the correction optical element 15 on the imaging performance of the projection optical system can be reduced to a negligible level.

Next, a fourth embodiment according to the present invention will be described with reference to FIG.
This will be described with reference to FIG. In this embodiment, the present invention is applied to a projection exposure apparatus capable of switching and using a secondary illumination light source composed of a single area and a plurality of divided secondary illumination light sources. FIG. 8 shows a projection exposure apparatus according to this embodiment. In FIG. 8, exposure light is supplied from a light source 22 to a secondary illumination light source system 23a or 23b. These illumination secondary light source systems 23a and 23b are configured in the same manner as the fly-eye lens 23a of FIG. 10 and the illumination secondary light source system 23b of FIG. 11, respectively. It can be switched by turret method. Further, variable aperture stops 50 and 27 are arranged on the emission side of the secondary illumination light source systems 23a and 23b, and the openings of these variable aperture stops 50 and 27 serve as secondary illumination light sources.

The secondary illumination light source system 23a or 23b
Exposure light from the illumination secondary light source is appropriately condensed by the condenser lens system 24 to illuminate the reticle 6, and the pattern of the reticle 6 is transferred onto the wafer 9 via the projection optical system 21. The drive system 16 is arranged on the pupil plane of the projection optical system 21 so that any one of a large number of transparent members 5a, 5b,..., 5x can be disposed. In this case, 12 correction optical elements 1 are arranged on the first transparent member 5a in the same arrangement as in the example of FIG. 1, and 12 correction optical elements 1 are arranged on the second transparent member 5b in the same arrangement as in the example of FIG.
Correction optical elements 12 are arranged, and the correction optical elements are arranged in different arrangements on the other transparent members.

When the illumination secondary light source system 23a for generating a single illumination secondary light source is disposed between the light source 22 and the condenser lens system 24, the main control system 26 controls the drive system 16 1 are arranged on the pupil plane of the projection optical system 21 via the light source 2 and the illumination secondary light source system 23b for generating an illumination secondary light source divided into a plurality of areas is provided.
When the second transparent member 5 b having the arrangement shown in FIG. 4 is arranged on the pupil plane of the projection optical system 21 via the drive system 16, the main control system 26 I do. With this mechanism, the alignment apparatus can maintain the optimal arrangement of the correction optical elements for the projection optical system 21 irrespective of the type of the secondary illumination light source.

In the above-described embodiment, since a normal reticle is used as the reticle 6, the direct image of the secondary illumination light source is a secondary illumination light source by the exposure light of the zero-order light transmitted through the reticle 6 as it is. It is an image of. However,
When, for example, a phase shift reticle is used as the reticle 6, the direct image of the illumination secondary light source is an image of the illumination secondary light source using exposure light emitted as primary diffraction light from the phase shift reticle. In addition to this, 0
When a type that emits strong diffracted light in addition to the secondary light is used, the direct image of the secondary illumination light source means an image of the secondary illumination light source by the strong diffraction light.

It should be noted that the present invention is not limited to the above-described embodiment, but can adopt various configurations without departing from the gist of the present invention.

[0066]

According to the present invention, the intensity of the exposure light is high.
The region ( direct image of the illumination light source ) and the region where the correction unit is arranged can be prevented from overlapping. Therefore, the exposure light
Or reach the substrate in a state where a large area of the strength wavefront distorted by passing through the correction means, or when a thin film for reflecting exposure light onto the correction means are assigned, where the exposure light
There is an advantage that a large intensity region ( a direct image from the illumination light source ) is not reflected and causes flare, and the imaging performance of the projection optical system is not deteriorated. Also,
In particular, when an optical thin film is provided on the correction means , the optical thin film is formed by not irradiating a large intensity area of the exposure light ( a direct image from the illumination light source ) to thereby form a focal point of the exposure light. Alternatively, it is possible to prevent the correction means from being damaged.

[0067]

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an arrangement in a pupil plane of a projection optical system of a correction optical element for alignment light suitable for a projection exposure apparatus having a single illumination secondary light source in a first embodiment of the present invention. It is.

FIG. 2 is a perspective view showing a configuration example of an alignment system corresponding to the arrangement of the correction optical elements in FIG.

FIG. 3A is an optical path diagram viewed from the direction of arrow A2 in FIG. 2;
2B is an optical path diagram viewed from the direction of arrow B2 in FIG. 2, and FIG. 3C is an enlarged perspective view showing a region C2 in FIG. 2.

FIG. 4 shows a second embodiment of the present invention;
FIG. 11 is a schematic diagram showing an arrangement of a correction optical element for alignment light suitable for a projection exposure apparatus having a next light source in a pupil plane of a projection optical system.

5 is a perspective view showing a configuration example of an alignment system corresponding to the arrangement of the correction optical elements in FIG.

FIG. 6A is an optical path diagram viewed from the direction of arrow A5 in FIG. 5;
(B) is an optical path diagram viewed from the direction of arrow B5 in FIG. 5, and (c) is an enlarged perspective view showing a region C5 in FIG.

FIG. 7 shows a pupil of a projection optical system of a correction optical element for alignment light suitable for a projection exposure apparatus having a secondary illumination light source having a single area but a variable numerical aperture in a third embodiment of the present invention. It is a schematic diagram which shows arrangement | positioning in a plane.

FIG. 8 shows a fourth embodiment of the present invention, which can switch between two types of illumination secondary light sources, that is, an illumination secondary light source of a single area and an illumination secondary light source of a divided area, and has an alignment system suitable for it. FIG. 2 is a configuration diagram illustrating a projection exposure apparatus.

FIG. 9 is a configuration diagram illustrating an alignment apparatus configured to compensate for chromatic aberration of the projection optical system with respect to irradiation light and detection light for alignment by a correction optical element provided in a pupil plane of the projection optical system.

FIG. 10 is a configuration diagram illustrating a projection exposure apparatus having a secondary illumination light source and a variable numerical aperture mechanism of a projection optical system.

FIG. 11 is a configuration diagram showing a projection exposure apparatus having a divided illumination secondary light source.

[Explanation of symbols]

1, 1a, 1b, 1c Correction optical element such as phase grating 2 Direct image (Fourier image) of illumination secondary light source on pupil plane of projection optical system 3 Area of pupil plane of projection optical system 4a, 4b Light flux 4c for alignment Beat interference light 5, 5a, 5b to 5x Transparent member such as a parallel plane plate 6 Reticle 8 Reticle alignment mark 8a Reticle mark 8b Window 9 Wafer 10 Wafer mark 11 Alignment microscope 21 Projection optical system 22 Exposure light source 23a , 23b Illumination secondary light source system 24 Condenser lens system

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 9/00

Claims (18)

(57) [Claims] 1. A illuminates a predetermined pattern formed on a mask with exposure light, an exposure apparatus that exposes a substrate with the exposure light through the projection optical system, irradiates the exposure light onto the mask An illumination system, the intensity distribution of the exposure light on a plane substantially conjugate with a substantial pupil plane of the projection optical system in the illumination system, the intensity distribution of the exposure light is more than the first region including the optical axis of the illumination system, Second without optical axis
Defining means for defining the area to be larger, using alignment light in a wavelength band different from the exposure light, and detecting means for detecting a mark formed on the substrate via the projection optical system, Correction means arranged on an area different from the area substantially conjugate to the second area on the substantial pupil plane of the projection optical system, and correcting chromatic aberration generated with respect to the alignment light. An exposure apparatus comprising: 2. A substantially conjugate region and the second region on the substantial pupil plane of the light generated from the mask by the irradiation of the exposure light, a predetermined order diffracted light is the most intense light The exposure apparatus according to claim 1, wherein the exposure apparatus is an area where an intensity distribution image is formed. 3. The apparatus according to claim 1 , wherein said defining means defines a distribution of the exposure light so as to distribute the exposure light to a plurality of independent areas other than the first area. Exposure apparatus according to the above. 4. The correction means according to claim 1 , wherein:
4. The projection optical system according to claim 1, wherein the projection optical system is disposed closer to an optical axis than a region conjugate with the second region. 5.
The exposure apparatus according to claim 1. 5. The method according to claim 1, wherein the defining means and the correcting means are used as a first defining means and a first correcting means, respectively, and the intensity distribution of the exposure light on the conjugate plane is set in the first area rather than the second area. The second defining means for increasing the
The first correction unit is disposed at a position different from a region substantially conjugate with the first region on the pupil plane of the projection optical system in accordance with the switching. 5. The exposure apparatus according to claim 1, wherein the switching is performed by a second correction unit. Wherein said first defining means comprises a first diaphragm member disposed on the conjugate plane with an opening having a shape corresponding to the second region, said second defining means, A second aperture member disposed on the conjugate plane having an opening having a shape corresponding to the first region, wherein the first correction unit is disposed on the substantial pupil plane of the projection optical system. A first transparent member disposed on a region substantially conjugate with the first region, wherein the second correction unit is disposed on a region substantially conjugate with the second region on the substantial pupil plane; A second transparent member, wherein when the first stop member is disposed on an optical path in the illumination system, the first transparent member is disposed on the substantial pupil plane; When being arranged on the optical path, the second transparent member is arranged on the substantial pupil plane. Cormorants, claim and further comprising a control means for switching control of the first and second ToTadashi means 5
Exposure apparatus according to the above. 7. The apparatus according to claim 1, wherein said correction means includes a phase type diffraction grating formed on a transparent member.
7. The exposure apparatus according to claim 6. Wherein said detecting means includes an illumination system for irradiating the alignment light on the mark through the projection optical system, light that receives the light generated from the mark by the irradiation through the projection optical system A first correction member disposed on the substantial pupil plane in the optical path of the irradiation system, and disposed on the substantial pupil plane in the optical path of the light receiving system. The exposure apparatus according to any one of claims 1 to 7, further comprising a second correction member. 9. The detecting means further includes means for irradiating the alignment light on a mask mark formed on the mask and receiving light generated from the mask mark, and wherein the detecting means comprises: 9. The method according to claim 8, wherein information on a relative positional relationship between the mask and the substrate is obtained based on a result of receiving light from a mark and a result of receiving light from the mark on the substrate. Exposure apparatus according to the above. To wherein said detecting means a detection result of the relative positional relationship is adjusted the said substrate and said mask based on a predetermined pattern, exposure of any one of claims 1 to 8 A device manufactured through a step of transferring using an apparatus. 11. An exposure method for illuminating a predetermined pattern formed on a mask with exposure light, and exposing a substrate with the exposure light via a projection optical system, wherein the exposure light is applied to the mask. In the illumination system, the intensity distribution of the exposure light on a plane substantially conjugate with the substantial pupil plane of the projection optical system does not include the optical axis more than the first region including the optical axis of the illumination system. Defining the second region to be larger, detecting alignment marks formed on the substrate via the projection optical system using alignment light of a wavelength band different from the exposure light, An exposure method comprising: disposing a correction member for correcting chromatic aberration generated with respect to the alignment light on a region different from a region substantially conjugate to the second region on a substantial pupil plane of the system. . 12. substantially conjugate region and the second region on the substantial pupil plane of the light generated from the mask by the irradiation of the exposure light, a predetermined order diffracted light is the most intense light The exposure method according to claim 11, wherein the area is an area where an intensity distribution image is formed. 13. A distribution of the exposure light is defined such that the exposure light is distributed on a plurality of independent areas other than the first area on the substantially conjugate plane. 13. The exposure method according to 11 or 12. 14. The projection optical system according to claim 11, wherein said correction member is disposed closer to the optical axis of said projection optical system than a region substantially conjugate with said second region on said pupil plane.
4. The exposure method according to claim 3. 15. The apparatus according to claim 1, wherein the correction member includes a phase type diffraction grating formed on a transparent member.
The exposure method according to any one of claims 1 to 14. 16. A first correction member disposed on the substantial pupil plane in an optical path of an irradiation system for irradiating the mark with the alignment light via the projection optical system; A second correction member disposed on the substantial pupil plane in an optical path of a light receiving system that receives light generated from the mark by irradiation through the projection optical system by irradiation. The exposure method according to any one of claims 11 to 15. 17. A method of irradiating a mask mark formed on the mask with the alignment light to receive light generated from the mask mark, and receiving the light from the mask mark and a mark on the substrate. 17. The exposure method according to claim 16, wherein information on a relative positional relationship between the mask and the substrate is obtained based on a result of receiving light from the light source. 18. The method according to claim 11 , wherein the predetermined pattern is formed on the substrate whose relative positional relationship with the mask is adjusted based on a result of detecting a mark formed on the substrate.
18. A method for manufacturing a device, comprising a step of transferring using the exposure method according to any one of claims 17 to 17.