JP3092050B2 - Antiferroelectric liquid crystal composition - Google Patents

Antiferroelectric liquid crystal composition

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Publication number
JP3092050B2
JP3092050B2 JP07317961A JP31796195A JP3092050B2 JP 3092050 B2 JP3092050 B2 JP 3092050B2 JP 07317961 A JP07317961 A JP 07317961A JP 31796195 A JP31796195 A JP 31796195A JP 3092050 B2 JP3092050 B2 JP 3092050B2
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Japan
Prior art keywords
liquid crystal
compound represented
formula
crystal composition
composition according
Prior art date
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JP07317961A
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Japanese (ja)
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JPH09157651A (en
Inventor
仁志 進藤
賢司 瀧川
仁志 林
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Soken Inc
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Nippon Soken Inc
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は液晶組成物にかかわ
り、特に反強誘電(カイラルスメクチックCA 、以下S
mCA * と略号する)相を出現するようにした液晶組成
物に関し、詳しくは液晶表示素子に使用するのに適した
反強誘電性液晶に関する。
The present invention relates to relates to a liquid crystal composition, particularly an anti-ferroelectric (chiral smectic C A, below S
It relates to a liquid crystal composition so as to emerge mC A * and for abbreviation) phase, more particularly antiferroelectric liquid crystal suitable for use in a liquid crystal display device.

【0002】[0002]

【従来の技術】近年、液晶ディスプレイは、薄型・軽量
・低消費電力などの特徴を生かして表示素子として幅広
く用いられるようになってきたが、これらの表示装置の
ほとんどは、ネマチック液晶を用いるTN(Twisted Ne
matic )型を一般的に採用している。このTN型の表示
方法は、液晶の比誘電率の異方性を駆動源としているた
めに、その応答速度は遅く、改善の必要性に迫られてい
た。
2. Description of the Related Art In recent years, liquid crystal displays have come to be widely used as display elements by making use of features such as thinness, light weight, and low power consumption. However, most of these display devices use a TN using a nematic liquid crystal. (Twisted Ne
matic) type is generally adopted. Since the TN type display method uses the anisotropy of the relative permittivity of the liquid crystal as a driving source, its response speed is slow, and it is necessary to improve the response speed.

【0003】これに対し、Meyer らによって見い出され
た強誘電性を示すカイラルスメクチックC(SmC*
略号する)液晶を用いた液晶デバイスは、ネマチック液
晶では達成し得なかった高速応答性・メモリー性を有し
ており、これらの特性を生かして、強誘電性液晶ディス
プレイへの応用研究が精力的に行われている。しかし、
この表示方法に必要とされる良好な配向性・メモリー性
を実際のセルにおいて実現することは困難であり、外部
からのショックに弱い等の問題をかかえており、解決す
べき課題は数多く残されている。
On the other hand, a liquid crystal device using a chiral smectic C (abbreviated as SmC * ) liquid crystal which exhibits ferroelectricity, which was discovered by Meyer et al., Has a high speed response and memory performance which cannot be achieved with a nematic liquid crystal. Utilizing these characteristics, research on application to ferroelectric liquid crystal displays is being vigorously conducted. But,
It is difficult to realize good orientation and memory properties required for this display method in actual cells, and it has problems such as being vulnerable to external shocks.There are many problems to be solved. ing.

【0004】一方、最近になってChandaniらによって、
前記のSmC* 相の低温側に三安定状態を示す反強誘電
相(SmCA * 相)が発見された。この反強誘電性液晶
は、隣接する層毎に双極子が反平行に配列した熱力学的
に安定な相を示し、印加電圧に対する明確なしきい値と
二重履歴特性を特徴とする反強誘電相−強誘電相間の電
場誘起相転移を起こす。また、このスイッチング挙動を
応用して、新規な表示方法の実現に向けての検討が始ま
っている。
On the other hand, recently Chandani et al.
An antiferroelectric phase (SmC A * phase) showing a tristable state was found on the low temperature side of the SmC * phase. This antiferroelectric liquid crystal exhibits a thermodynamically stable phase in which dipoles are arranged antiparallel in each adjacent layer, and is characterized by a distinct threshold value for applied voltage and a double hysteresis characteristic. An electric field-induced phase transition between the phase and the ferroelectric phase occurs. Also, studies have been started for realizing a new display method by applying this switching behavior.

【0005】反強誘電相を有する液晶化合物としては、
特開平1−213390、特開平1−316339、特
開平1−316367、特開平2−28128の各公報
等が既に知られており、更に新しい反強誘電性液晶化合
物が発表されており、次第にその数を増している。とこ
ろで、現在までに製造されている反強誘電性液晶化合物
の多くは実用的な面から考えたとき融点が高く、また反
強誘電相の温度範囲も室温よりはるかに高い。従って、
ただ1種類の反強誘電性液晶化合物を用いて液晶素子を
作製することは困難で、通常は実用的な物性バランスを
図るために、数種以上の反強誘電性液晶化合物を混合し
て使用することが必要となる。
[0005] Liquid crystal compounds having an antiferroelectric phase include:
JP-A-1-213390, JP-A-1-316339, JP-A-1-31667, and JP-A-2-28128 are already known, and newer antiferroelectric liquid crystal compounds have been announced. Increasing numbers. By the way, most of the antiferroelectric liquid crystal compounds manufactured up to now have a high melting point from a practical point of view, and the temperature range of the antiferroelectric phase is much higher than room temperature. Therefore,
It is difficult to fabricate a liquid crystal device using only one type of antiferroelectric liquid crystal compound, and usually, a mixture of several or more types of antiferroelectric liquid crystal compounds is used to balance practical physical properties. It is necessary to do.

【0006】[0006]

【発明が解決しようとする課題】反強誘電相のスイッチ
ング特性を液晶ディスプレイに応用する場合、反強誘電
性液晶のみを含んだ組成物を用いて液晶セルを作製する
ことも不可能ではないが、三安定状態を示す温度範囲、
液晶駆動電圧、結晶化温度、配向性などの点で必ずしも
好ましいとは言えない。特に、液晶駆動電圧に関して
は、現状の反強誘電性液晶組成物は駆動電圧が35〜4
5Vと高く、消費電力や駆動ICの耐電圧条件等の制約
から考えて、液晶駆動電圧を低下させる必要がある。ま
た、高コントラストを得るために高速応答化も必要であ
る。本発明は、このような状況に鑑み、しきい値電圧を
低下させ、低電圧駆動を可能にし、また、高速応答化さ
れた反強誘電性液晶組成物を提供することを目的とす
る。
When the switching characteristics of the antiferroelectric phase are applied to a liquid crystal display, it is not impossible to fabricate a liquid crystal cell using a composition containing only an antiferroelectric liquid crystal. , Temperature range showing three stable states,
It is not always preferable in terms of liquid crystal driving voltage, crystallization temperature, orientation, and the like. In particular, regarding the liquid crystal drive voltage, the current antiferroelectric liquid crystal composition has a drive voltage of 35 to 4
It is as high as 5 V, and it is necessary to lower the liquid crystal driving voltage in view of the restrictions such as power consumption and withstand voltage conditions of the driving IC. In addition, high-speed response is required to obtain high contrast. In view of such circumstances, an object of the present invention is to provide an antiferroelectric liquid crystal composition which lowers the threshold voltage, enables low-voltage driving, and has a high-speed response.

【0007】[0007]

【課題を解決するための手段】本発明は、下記式(1)
及び(2)で示される化合物の少なくとも1種類を含む
反強誘電性液晶組成物である。 R1 −A1 −A2 −X1 −A3 −R2 ・・・・・(1) (ただし、R1 は炭素原子数が1〜20のアルキル基。
2 は炭素原子数が2〜18の直鎖状アルコキシアルキ
ル基。A1 ,A2 ,A3 はシクロヘキサン環またはベン
ゼン環を表わし、そのうち少なくとも1つはシクロヘキ
サン環を表わす。X1 は−COO−または単結合を表わ
す。) R3 −B1 −X2 −B2 −CN ・・・・・(2) (ただし、R3 は炭素原子数が1〜20のアルキル基。
1 ,B2
Means for Solving the Problems The present invention provides the following formula (1)
And an antiferroelectric liquid crystal composition containing at least one of the compounds represented by (2). R 1 -A 1 -A 2 -X 1 -A 3 -R 2 (1) (where R 1 is an alkyl group having 1 to 20 carbon atoms).
R 2 is a linear alkoxyalkyl group having 2 to 18 carbon atoms. A 1 , A 2 and A 3 represent a cyclohexane ring or a benzene ring, and at least one of them represents a cyclohexane ring. X 1 represents —COO— or a single bond. ) R 3 -B 1 -X 2 -B 2 -CN (2) (where R 3 is an alkyl group having 1 to 20 carbon atoms).
B 1 and B 2

【化8】 のうちのいずれかであり、X2 は単結合を表わす。)Embedded image And X 2 represents a single bond . )

【0008】次に式(1)及び(2)で示される化合物
の合成法を示す。(1)式(1)においてX1 が−CO
O−のとき:
Next, a method for synthesizing the compounds represented by the formulas (1) and (2) will be described. (1) In the formula (1), X 1 is -CO
For O-:

【化9】 Embedded image

【0009】(2)式(1)においてX1 が単結合のと
き:
(2) When X 1 is a single bond in the formula (1):

【化10】 Embedded image

【0010】[0010]

【化11】 Embedded image

【0011】[0011]

【化12】 Embedded image

【0012】[0012]

【化13】 Embedded image

【0013】(3)式(2)においてX2 が単結合のと
き:
(3) When X 2 is a single bond in the formula (2):

【化14】 Embedded image

【0014】前記式(1)で示される化合物の好ましい
態様は、次式(3),(4)又は(5)で示される。
A preferred embodiment of the compound represented by the formula (1) is represented by the following formula (3), (4) or (5).

【化15】 Embedded image

【0015】前記式(3),(4)又は(5)で示され
る化合物の更に好ましい態様はそれぞれ次式(8),
(9)又は(10)で示される。
More preferred embodiments of the compound represented by the formula (3), (4) or (5) are represented by the following formulas (8) and (8), respectively.
It is indicated by (9) or (10).

【化16】 Embedded image

【0016】前記式(2)で示される化合物の好ましい
態様は次式(7)で示される。
A preferred embodiment of the compound represented by the formula (2) is represented by the following formula (7) .

【化17】 Embedded image

【0017】前記式(1)及び(2)で示される化合物
の少なくとも1種類と組み合わせて反強誘電性液晶組成
物を作るのに好ましい化合物は、次式(13)で示され
る。
A preferred compound for producing an antiferroelectric liquid crystal composition in combination with at least one of the compounds represented by the above formulas (1) and (2) is represented by the following formula (13).

【化18】 Embedded image

【0018】この化合物は次のようにして作ることがで
きる。ビフェニルカルボン酸と光学活性ヒドロキシ安息
香酸エステルとをクロロホルム又は、塩化メチレン等の
溶媒に溶かし、N,N−ジシクロヘキシルカルボジイミ
ド等の脱水縮合剤とN,N−ジメチル−4−アミノピリ
ジン等の塩基を用いて、反応を行うことにより目的物を
得る事ができる。ビフェニルカルボン酸類の合成法の概
略を芳香環が置換されていないものを例として以下に示
す。
This compound can be prepared as follows. Biphenylcarboxylic acid and optically active hydroxybenzoic acid ester are dissolved in a solvent such as chloroform or methylene chloride, and a dehydrating condensing agent such as N, N-dicyclohexylcarbodiimide and a base such as N, N-dimethyl-4-aminopyridine are used. Thus, the desired product can be obtained by carrying out the reaction. An outline of a method for synthesizing biphenylcarboxylic acids is shown below by taking an example in which an aromatic ring is not substituted.

【0019】(1)X3 が単結合又は−O−の場合:(1) When X 3 is a single bond or —O—:

【0020】[0020]

【化19】 Embedded image

【0021】ここに、R8 はアルキルまたはアルコキシ
で、反応1は、4−アルキルまたはアルコキシブロモベ
ンゼンから調製したグリニャール試薬と4−ブロモベン
ゾニトリルとを反応させる。反応2は常法通りに加水分
解する。
Here, R 8 is alkyl or alkoxy, and in reaction 1, a Grignard reagent prepared from 4-alkyl or alkoxy bromobenzene is reacted with 4-bromobenzonitrile. Reaction 2 is hydrolyzed as usual.

【0022】(2)X3 が−COO−の場合:(2) When X 3 is —COO—:

【0023】[0023]

【化20】 ここに、R6 はアルキルで、反応1は、臭化ベンジルと
炭酸水素カリウム等の塩基とをDMF等の溶媒中で反応
を行う。反応2は、常法通りにエステル化を行う。反応
3は、パラジウム触媒存在下で水素化分解して、脱ベン
ジルを行う。
Embedded image Here, R 6 is alkyl, and in reaction 1, benzyl bromide is reacted with a base such as potassium hydrogen carbonate in a solvent such as DMF. In the reaction 2, esterification is carried out as usual. Reaction 3 is carried out by hydrogenolysis in the presence of a palladium catalyst to remove benzyl.

【0024】この式(13)で示される化合物と組合わ
せて強誘電性液晶組成物を作るのに、より好ましい前記
式(1),(2)の化合物の具体的なものは式(3),
(4),(5),(7)で示される化合物であり、更に
好ましい、式(3),(4),(5),(7)で示され
る化合物は前記式(8),(9),(10)及び次式
(12)で示される化合物である。
For producing a ferroelectric liquid crystal composition in combination with the compound represented by the formula (13), more preferred compounds of the formulas (1) and (2) are represented by the formula (3) ,
(4), (5), a compound represented by (7), further preferably formula (3), (4), (5), a compound represented by (7) the equation (8), (9 ), (10) and the following formula
It is a compound shown by (12) .

【化21】 尚、式(7)と式(12)は同じものであるが、説明の
便宜上、式(12)という記述を設けている。前記式
(8),(9),(10)においてR4 はメチル基であ
ることが好ましく、前記式(12)においてR3 は炭素
原子数1〜6のアルキル基であることが好ましい。
Embedded image Expression (7) and Expression (12) are the same, but for convenience of explanation, a description of Expression (12) is provided. In the formulas (8), (9) and (10), R 4 is preferably a methyl group, and in the formula (12) , R 3 is preferably an alkyl group having 1 to 6 carbon atoms.

【0025】前記式(1)及び(2)好ましくは式
(3)〜(7)、より好ましくは式(8)〜(12)で
示される化合物の含有量の合計は1〜49wt%が好まし
い。この含有量が49wt%を超えると、反強誘電性が極
端に減少する。一方この含有量が1wt%未満であると、
低電圧駆動性が乏しくなる。また、更に好ましくは、こ
の含有量は5〜30wt%である。
The total content of the compounds represented by the formulas (1) and (2), preferably the formulas (3) to (7), more preferably the formulas (8) to (12) is preferably 1 to 49% by weight. . If this content exceeds 49% by weight, the antiferroelectricity is extremely reduced. On the other hand, if this content is less than 1 wt%,
Poor low-voltage drivability. More preferably, the content is 5 to 30 wt%.

【0026】[0026]

【実施例】(実施例1〜8、比較例1) 表1に示した反強誘電性液晶化合物No. 1からNo. 4
(全てR体)を用いて基準液晶として組成物A(比較例
1)を作製した。この組成物Aに対し、表2に示す化合
物No. 5〜10をそれぞれ組成物全量を基準として20
wt%、化合物12を組成物全量を基準として10wt%添
加し、組成物B〜G(実施例1〜6)とした(表3)。
尚、化合物5〜12はすべて市販品であり、それぞれ関
東化学(株)より購入し、品番が、NKV−3−151
−1(化合物No. 5)、NKV−3−144−1(化合
物No. 6)、NKV−3−127−1(化合物No.
7)、NKV−5−127−1(化合物No. 8)、NK
V−4−127−1(化合物No.9)、3−CEN(
合物No. 10)である。そして液晶組成物A,B,C,
D,E,F,Gはそれぞれラビングによる配向処理を施
した液晶セル(ギャップ:2μm)に注入し、注入後い
ったん液晶組成物が等方性液体に変化する温度にセルを
加熱し、その後2℃/min で室温まで冷却して反強誘電
性液晶素子を得た。
Examples (Examples 1 to 8, Comparative Example 1) Antiferroelectric liquid crystal compounds No. 1 to No. 4 shown in Table 1
Composition A (Comparative Example 1) was prepared as a reference liquid crystal using (all R bodies). Compound No. 5 to 10 shown in Table 2 were added to this composition A for 20
Compositions B to G ( Examples 1 to 6 ) were prepared by adding 10% by weight of Compound 12 to the composition (Table 3).
Compounds 5 to 12 are all commercial products, each of which was purchased from Kanto Chemical Co., Ltd., and the product number was NKV-3-151.
-1 (Compound No. 5), NKV-3-1444-1 (Compound No. 6), NKV-3-1277-1 (Compound No.
7), NKV-5-127-1 (Compound No. 8), NK
V-4-127-1 (Compound No.9), 3-CEN (of
Compound No. 10). And liquid crystal compositions A, B, C,
D, E, F, and G are respectively injected into a liquid crystal cell (gap: 2 μm) that has been subjected to an alignment treatment by rubbing, and after injection, the cell is heated to a temperature at which the liquid crystal composition changes into an isotropic liquid, and then the liquid is heated to 2 ° C. The mixture was cooled to room temperature at a rate of ° C / min to obtain an antiferroelectric liquid crystal device.

【0027】この素子に1Hz、±40Vの三角波を印加
し、直交ニコル下で透過光強度を測定したところ、図1
に示すようなダブルヒステリシス曲線を得た。このヒス
テリシスにおいて、電圧増加時に相対透過率90%とな
る液晶駆動電圧をしきい値電圧とし、組成物A,B,
C,D,E,F,Gについてしきい値電圧を求めて測定
温度に対してプロットしたところ、図2に示す結果が得
られた。化合物No. 5,No. 6,No. 7,No. 8,No.
及びNo. 10を添加することにより、組成物B,C,
D,E,F,Gのしきい値電圧は組成物Aに比べて大幅
に低下することができた。つまりSmCA * 相から電界
誘起SmC* 相へ相転移させるための30℃におけるし
きい値電圧は、組成物Aが44.0Vであるのに対し
て、組成物Bは21.7V、組成物Cは24.5V、組
成物Dは22.7V、組成物Eは23.2V、組成物F
は22.6V、組成物Gは15.2Vと低くなる。この
ように、反強誘電性液晶組成物のしきい値電圧を低下す
ることが可能となった。
A 1 Hz, ± 40 V triangular wave was applied to this element, and the transmitted light intensity was measured under crossed Nicols.
A double hysteresis curve as shown in FIG. In this hysteresis, the liquid crystal driving voltage at which the relative transmittance becomes 90% when the voltage is increased is defined as the threshold voltage, and the compositions A, B, and
When the threshold voltages of C, D, E, F, and G were obtained and plotted against the measured temperatures, the results shown in FIG. 2 were obtained. Compound No. 5, No. 6, No. 7, No. 8, No.
By adding No. 9 and No. 10 , the compositions B, C,
The threshold voltages of D, E, F, and G could be significantly reduced as compared with the composition A. In other words, the threshold voltage at 30 ° C. for the phase transition from the SmC A * phase to the electric field induced SmC * phase is 44.0 V for composition A, 21.7 V for composition B, and C is 24.5 V, Composition D is 22.7 V, Composition E is 23.2 V, Composition F
Is 22.6 V, and the composition G is as low as 15.2 V. Thus, the threshold voltage of the antiferroelectric liquid crystal composition can be reduced.

【0028】[0028]

【表1】 [Table 1]

【0029】[0029]

【表2】 [Table 2]

【0030】[0030]

【表3】 [Table 3]

【0031】また、応答時間を±50Vの電圧を印加し
て図3に示したように測定した。組成物A,B,C,
D,E,F,Gの応答時間は30℃においてそれぞれ1
00μs,30μs,30μs,45μs,50μs,
45μs,25μsであり、化合物No. 5〜No. 10
添加することにより、電場応答を高速化することが可能
となった。また、類似構造の液晶組成物を記載したもの
として特開平4−330048、特開平4−30629
3、特公平5−78596等が挙げられるが、いずれも
反強誘電性液晶には言及していない。
The response time was measured as shown in FIG. 3 by applying a voltage of ± 50 V. Compositions A, B, C,
The response time of D, E, F, and G is 1 at 30 ° C.
00 μs, 30 μs, 30 μs, 45 μs, 50 μs,
The time was 45 μs and 25 μs, and the addition of Compound Nos. 5 to 10 made it possible to speed up the electric field response. JP-A-4-330048 and JP-A-4-30629 describe liquid crystal compositions having a similar structure.
3, Japanese Patent Publication No. 5-78596, etc., but none of them mention antiferroelectric liquid crystal.

【0032】[0032]

【発明の効果】以上のように本発明によって提供された
化合物を反強誘電性液晶組成物に添加することにより、
低電圧による液晶の駆動及び電場応答の高速化が可能と
なり、実用性に優れた液晶表示素子の製造に用いること
ができる。
As described above, by adding the compound provided by the present invention to an antiferroelectric liquid crystal composition,
The liquid crystal can be driven by a low voltage and the electric field response can be speeded up, so that it can be used for manufacturing a liquid crystal display element having excellent practicality.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例の反強誘電性液晶組成物を用いて作った
液晶素子の示したダブルヒステリシス曲線を表すグラ
フ。
FIG. 1 is a graph showing a double hysteresis curve of a liquid crystal device manufactured using an antiferroelectric liquid crystal composition of an example.

【図2】実施例及び比較例の反強誘電性液晶組成物を用
いて作った液晶素子の、温度に対するしきい値電圧の変
化を示すグラフ。
FIG. 2 is a graph showing a change in threshold voltage with respect to temperature of a liquid crystal element made using the antiferroelectric liquid crystal compositions of Examples and Comparative Examples.

【図3】実施例及び比較例の反強誘電性液晶組成物を用
いて作った液晶素子の印加電圧変化に対する応答時間の
測定方法を示すグラフ。
FIG. 3 is a graph showing a method for measuring a response time to a change in applied voltage of a liquid crystal element manufactured using the antiferroelectric liquid crystal compositions of Examples and Comparative Examples.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平4−218019(JP,A) (58)調査した分野(Int.Cl.7,DB名) C09K 19/30 C09K 19/42 - 19/46 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-218019 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C09K 19/30 C09K 19/42-19 / 46

Claims (28)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 下記式(1)及び(2)で示される化合
物の少なくとも1種類を含む反強誘電性液晶組成物。 R1 −A1 −A2 −X1 −A3 −R2 ・・・・・(1) (ただし、R1 は炭素原子数が1〜20のアルキル基。
2 は炭素原子数が2〜18の直鎖状アルコキシアルキ
ル基。A1 ,A2 ,A3 はシクロヘキサン環またはベン
ゼン環を表わし、そのうち少なくとも1つはシクロヘキ
サン環を表わす。X1 は−COO−または単結合を表わ
す。) R3 −B1 −X2 −B2 −CN ・・・・・(2) (ただし、R3 は炭素原子数が1〜20のアルキル基。
1 ,B2 は 【化1】 のうちのいずれかであり、X2 は単結合を表わす。)
1. An antiferroelectric liquid crystal composition comprising at least one compound represented by the following formulas (1) and (2). R 1 -A 1 -A 2 -X 1 -A 3 -R 2 (1) (where R 1 is an alkyl group having 1 to 20 carbon atoms).
R 2 is a linear alkoxyalkyl group having 2 to 18 carbon atoms. A 1 , A 2 and A 3 represent a cyclohexane ring or a benzene ring, and at least one of them represents a cyclohexane ring. X 1 represents —COO— or a single bond. ) R 3 -B 1 -X 2 -B 2 -CN (2) (where R 3 is an alkyl group having 1 to 20 carbon atoms).
B 1 and B 2 are And X 2 represents a single bond . )
【請求項2】 前記式(1)が下記式(3),(4)又
は(5)で示され、前記式(2)が下記式(7)で示さ
れる請求項1の反強誘電性液晶組成物。 【化2】 (ただし、R1 及びR2 は上記と同じ意味を表わし、式
(3)〜(5)について各々独立である。) 【化3】 (ただし、R3 は上記と同じ意味を表わす。
2. The antiferroelectric substance according to claim 1, wherein the equation (1) is represented by the following equation (3), (4) or (5), and the equation (2) is represented by the following equation (7) . Liquid crystal composition. Embedded image (However, R 1 and R 2 have the same meaning as described above, and are independent of formulas (3) to (5).) (However, R 3 has the same meaning as described above . )
【請求項3】 前記式(3),(4),(5),(7)
がそれぞれ下記式(8),(9),(10),(12)
で示される請求項2の反強誘電性液晶組成物。 【化4】 (ただし、R1 は前記と同じ意味を表わし、R4 は炭素
原子数が1〜17の直鎖状アルキル基であり、(8)〜
(10)について各々独立である。) 【化5】 (ただし、R3 は前記と同じ意味を表わす。)
3. The equations (3), (4), (5) and (7)
Are the following equations (8), (9), (10), and (12), respectively.
3. The antiferroelectric liquid crystal composition according to claim 2, wherein Embedded image (However, R 1 has the same meaning as described above; R 4 is a linear alkyl group having 1 to 17 carbon atoms;
(10) is independent of each other. ) (However, R 3 has the same meaning as described above.)
【請求項4】 前記式(8)で示される化合物を含む請
求項3の反強誘電性液晶組成物。
4. The antiferroelectric liquid crystal composition according to claim 3, comprising a compound represented by the formula (8).
【請求項5】 前記式(9)で示される化合物を含む請
求項3の反強誘電性液晶組成物。
5. The antiferroelectric liquid crystal composition according to claim 3, comprising a compound represented by the formula (9).
【請求項6】 前記式(10)で示される化合物を含む
請求項3の反強誘電性液晶組成物。
6. The antiferroelectric liquid crystal composition according to claim 3, comprising a compound represented by the formula (10).
【請求項7】 前記式(12)で示される化合物を含む
請求項3の反強誘電性液晶組成物。
7. The antiferroelectric liquid crystal composition according to claim 3, comprising a compound represented by the formula (12).
【請求項8】 請求項3の式(8),(9),(10)
及び(12)で示される化合物の少なくとも1種類を含
み、かつ、下記式(13)で示される化合物の少なくと
も1種類を含む反強誘電性液晶組成物。 【化6】 (ただし、R6 は炭素原子数4〜14のアルキル基であ
りX3 は単結合、−O−又は−COO−であり、D1
2 ,D3 は 【化7】 を表し(ただし、これらはF,Cl,Br,CH3 基で
置換されていてもよい)、RfはCH3 またはCF3
7 は主に炭化水素基からなり、炭素原子数は2〜16
であり、その一部にエーテル基やカルボニル基などのよ
うに酸素原子を含んでいても良い炭素原子数2〜16の
炭化水素基である。)
8. The expression (8), (9), (10) according to claim 3.
And an antiferroelectric liquid crystal composition comprising at least one compound represented by the following formula (13) and at least one compound represented by the following formula (13). Embedded image (Where R 6 is an alkyl group having 4 to 14 carbon atoms, X 3 is a single bond, —O— or —COO—, and D 1 ,
D 2 and D 3 are (However, these may be substituted by F, Cl, Br, CH 3 groups), and Rf is CH 3 or CF 3 ,
R 7 is mainly composed of a hydrocarbon group and has 2 to 16 carbon atoms.
Which is a hydrocarbon group having 2 to 16 carbon atoms which may contain an oxygen atom, such as an ether group or a carbonyl group. )
【請求項9】 前記式(8)で示される化合物の少なく
とも1種類と前記式(13)で示される化合物の少なく
とも1種類を含む請求項の反強誘電性液晶組成物。
9. The antiferroelectric liquid crystal composition according to claim 8 , comprising at least one kind of the compound represented by the formula (8) and at least one kind of the compound represented by the formula (13).
【請求項10】 前記式(9)で示される化合物の少な
くとも1種類と前記式(13)で示される化合物の少な
くとも1種類を含む請求項の反強誘電性液晶組成物。
10. The antiferroelectric liquid crystal composition according to claim 8 , comprising at least one kind of the compound represented by the formula (9) and at least one kind of the compound represented by the formula (13).
【請求項11】 前記式(10)で示される化合物の少
なくとも1種類と前記式(13)で示される化合物の少
なくとも1種類以上含む請求項の反強誘電性液晶組成
物。
11. The antiferroelectric liquid crystal composition according to claim 8 , comprising at least one kind of the compound represented by the formula (10) and at least one kind of the compound represented by the formula (13).
【請求項12】 前記式(12)で示される化合物の少
なくとも1種類と前記式(13)で示される化合物の少
なくとも1種類を含む請求項の反強誘電性液晶組成
物。
12. antiferroelectric liquid crystal composition according to claim 8 comprising at least one compound represented by at least one and the formula of the compound represented by the formula (12) (13).
【請求項13】 前記式(8),(9),(10)及び
(12)で示される化合物の含有量の合計が、1〜49
wt%である請求項の反強誘電性液晶組成物。
13. The expression (8), (9), (10) and
The total content of the compound represented by (12) is from 1 to 49
The antiferroelectric liquid crystal composition according to claim 8 , which is in wt%.
【請求項14】 前記式(8)で示される化合物の含有
量が、1〜49wt%である請求項の反強誘電性液晶組
成物。
14. The antiferroelectric liquid crystal composition according to claim 9 , wherein the content of the compound represented by the formula (8) is 1 to 49 wt%.
【請求項15】 前記式(9)で示される化合物の含有
量が、1〜49wt%である請求項10の反強誘電性液晶
組成物。
15. The antiferroelectric liquid crystal composition according to claim 10 , wherein the content of the compound represented by the formula (9) is 1 to 49 wt%.
【請求項16】 前記式(10)で示される化合物の含
有量が、1〜49wt%である請求項11の反強誘電性液
晶組成物。
16. The antiferroelectric liquid crystal composition according to claim 11 , wherein the content of the compound represented by the formula (10) is 1 to 49% by weight.
【請求項17】 前記式(12)で示される化合物の含
有量が、1〜49wt%である請求項12の反強誘電性液
晶組成物。
17. The antiferroelectric liquid crystal composition according to claim 12 , wherein the content of the compound represented by the formula (12) is 1 to 49 wt%.
【請求項18】 前記式(8),(9),(10)及び
(12)で示される化合物の含有量の合計が、5〜30
wt%であることを特徴とする請求項の反強誘電性液晶
組成物。
18. The expression (8), (9), (10) and
The total content of the compound represented by (12) is 5 to 30.
The antiferroelectric liquid crystal composition according to claim 8 , wherein the composition is wt%.
【請求項19】 前記式(8)で示される化合物の含有
量が、5〜30wt%である請求項の反強誘電性液晶組
成物。
19. The antiferroelectric liquid crystal composition according to claim 9 , wherein the content of the compound represented by the formula (8) is 5 to 30% by weight.
【請求項20】 前記式(9)で示される化合物の含有
量が、5〜30wt%である請求項10の反強誘電性液晶
組成物。
20. The antiferroelectric liquid crystal composition according to claim 10 , wherein the content of the compound represented by the formula (9) is 5 to 30% by weight.
【請求項21】 前記式(10)で示される化合物の含
有量が、5〜30wt%である請求項11の反強誘電性液
晶組成物。
21. The antiferroelectric liquid crystal composition according to claim 11 , wherein the content of the compound represented by the formula (10) is 5 to 30% by weight.
【請求項22】 前記式(12)で示される化合物の含
有量が、5〜30wt%である請求項12の反強誘電性液
晶組成物。
22. The antiferroelectric liquid crystal composition according to claim 12 , wherein the content of the compound represented by the formula (12) is 5 to 30% by weight.
【請求項23】 前記式(8)で示される化合物のう
ち、R4 がメチル基である請求項9,14又は19の反
強誘電性液晶組成物。
23. The antiferroelectric liquid crystal composition according to claim 9, 14 or 19 , wherein R 4 in the compound represented by the formula (8) is a methyl group.
【請求項24】 前記式(9)で示される化合物のう
ち、R4 がメチル基である請求項10,15又は20
反強誘電性液晶組成物。
24. The antiferroelectric liquid crystal composition according to claim 10 , wherein R 4 in the compound represented by the formula (9) is a methyl group.
【請求項25】 前記式(10)で示される化合物のう
ち、R4 がメチル基である請求項11,16又は21
反強誘電性液晶組成物。
25. the formula among the compounds represented by (10), anti-ferroelectric liquid crystal composition according to claim 11, 16 or 21 R 4 is a methyl group.
【請求項26】 前記式(12)で示される化合物の少
なくとも1種類を含みR3 が炭素原子数1〜6のアルキ
ル基である請求項の反強誘電性液晶組成物。
26. The antiferroelectric liquid crystal composition according to claim 8 , wherein R 3 is an alkyl group having 1 to 6 carbon atoms containing at least one compound represented by the formula (12) .
【請求項27】 構造式(12)で示される化合物のR
3 が炭素原子数1〜6のアルキル基である請求項12
反強誘電性液晶組成物。
27. The compound represented by the structural formula (12)
13. The antiferroelectric liquid crystal composition according to claim 12 , wherein 3 is an alkyl group having 1 to 6 carbon atoms.
【請求項28】 請求項1から請求項27までのいずれ
かの組成物を用いた液晶表示素子。
(28) A liquid crystal display device using the composition according to any one of (1) to ( 27 ).
JP07317961A 1995-12-06 1995-12-06 Antiferroelectric liquid crystal composition Expired - Fee Related JP3092050B2 (en)

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JP3092050B2 true JP3092050B2 (en) 2000-09-25

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