JP3089741B2 - Materials for magnetostatic wave devices - Google Patents
Materials for magnetostatic wave devicesInfo
- Publication number
- JP3089741B2 JP3089741B2 JP03259629A JP25962991A JP3089741B2 JP 3089741 B2 JP3089741 B2 JP 3089741B2 JP 03259629 A JP03259629 A JP 03259629A JP 25962991 A JP25962991 A JP 25962991A JP 3089741 B2 JP3089741 B2 JP 3089741B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetostatic wave
- wave device
- substrate
- materials
- wave devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000002223 garnet Substances 0.000 description 11
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Compounds Of Iron (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は静磁波デバイス用材料
に関し、特に磁性ガーネット膜の材料となる静磁波デバ
イス用材料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for a magnetostatic wave device, and more particularly to a material for a magnetostatic wave device used as a material for a magnetic garnet film.
【０００２】[0002]
【従来の技術】従来、静磁波デバイスにおいて磁性ガー
ネット膜の材料として、Ｙ3 Ｆｅ5 Ｏ12（ＹＩＧ）が重
要な材料として使われていた。このＹＩＧは、極端に強
磁性半値幅（ΔＨ）が小さい。そのため、ＹＩＧを用い
た静磁波デバイスにおいて、入力信号と出力信号との差
を小さくできる。2. Description of the Related Art Heretofore, Y 3 Fe 5 O 12 (YIG) has been used as an important material as a material of a magnetic garnet film in a magnetostatic wave device. This YIG has an extremely small ferromagnetic half width (ΔH). Therefore, in the magnetostatic wave device using YIG, the difference between the input signal and the output signal can be reduced.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、ＹＩＧ
は、飽和磁化（４πＭｓ）の温度変化に対する変化率
が、約−２１００ｐｐｍ／℃である。したがって、この
ようなＹＩＧを用いた静磁波デバイスにおいて温度変化
に対する変化率を調節するためには、静磁波デバイスで
使用される永久磁石の磁界の温度変化に対する変化率を
変化させなければならなかった。そのため、ＹＩＧを用
いた静磁波デバイスにおける温度変化に対する変化率の
調節が困難であった。SUMMARY OF THE INVENTION However, YIG
Has a rate of change of the saturation magnetization (4πMs) with respect to a temperature change of about −2100 ppm / ° C. Therefore, in order to adjust the rate of change with respect to temperature change in the magnetostatic wave device using such a YIG, the rate of change with respect to temperature change of the magnetic field of the permanent magnet used in the magnetostatic wave device had to be changed. . Therefore, it has been difficult to adjust the rate of change with respect to temperature change in the magnetostatic wave device using YIG.
【０００４】それゆえに、この発明の主たる目的は、強
磁性半値幅（ΔＨ）を大きくすることなしに、飽和磁化
（４πＭｓ）の温度変化に対する変化率をいろいろと変
化させることができる、静磁波デバイス用材料を提供す
ることである。[0004] Therefore, a main object of the present invention is to provide a magnetostatic wave device capable of changing the rate of change of the saturation magnetization (4πMs) with respect to temperature without increasing the ferromagnetic half width (ΔH). To provide materials for use.
【０００５】[0005]
【課題を解決するための手段】この発明は、Ｒ3 Ｇａ5
Ｏ12（ただし、Ｒは希土類元素から選ばれた１種類以上
の元素である。）基板上に液相エピタキシャル成長法
（以下、「ＬＰＥ法」という。）で成長させる静磁波用
Ｙ3 Ｆｅ5 Ｏ12膜の材料となる静磁波デバイス用材料に
おいて、静磁波用Ｙ3 Ｆｅ5 Ｏ12膜は、Ｂｉ，Ｇｄ，Ｌ
ｕ，Ｓｃ，Ｌａ，Ｇａ，Ａｌから選ばれた１種類以上の
元素を含有し、基板との格子定数の差が０．００１Å以
下である、静磁波デバイス用材料である。According to the present invention, there is provided a method for forming an R 3 Ga 5
O 12 (wherein, R is one or more elements selected from rare earth elements.) Liquid phase epitaxial growth method on a substrate
(Hereinafter, referred to as “LPE method.”) Among magnetostatic wave device materials to be used as magnetostatic wave Y 3 Fe 5 O 12 films grown by the LPE method , the magnetostatic wave Y 3 Fe 5 O 12 film is made of Bi, Gd, L
A magnetostatic wave device material containing at least one element selected from u, Sc, La, Ga, and Al and having a lattice constant difference from a substrate of 0.001 ° or less.
【０００６】[0006]
【発明の効果】この発明によれば、磁性ガーネット膜と
基板との格子定数の差が０．００１Å以下からなる。そ
のため、強磁性半値幅（ΔＨ）を大きくすることなし
に、飽和磁化（４πＭｓ）の温度変化に対する変化率を
いろいろと変化させることができる、静磁波デバイス用
材料が得られる。したがって、この静磁波デバイス用材
料を用いた静磁波デバイスにおいて、いろいろな永久磁
石を用いることができる。Effects of the Invention According to the present invention, the difference between the lattice constants of the magnetic garnet film and the substrate is made less 0.001A. Therefore, a magnetostatic wave device material can be obtained in which the rate of change of the saturation magnetization (4πMs) with respect to a temperature change can be variously changed without increasing the ferromagnetic half width (ΔH). Therefore, various permanent magnets can be used in the magnetostatic wave device using the magnetostatic wave device material.
【０００７】この発明の上述の目的，その他の目的，特
徴および利点は、以下の実施例の詳細な説明から一層明
らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments.
【０００８】[0008]
【実施例】まず、チョクラルスキ法によって、Ｒ3 Ｇａ
5 Ｏ12単結晶を作成し、スライスおよび研磨を行って、
ＬＰＥ法でガーネット膜を形成するための基板とした。
なお、Ｒは希土類元素から選ばれた１種類以上の元素で
ある。DESCRIPTION OF THE PREFERRED EMBODIMENTS First, R 3 Ga was prepared by the Czochralski method.
5 O 12 single crystal is made, sliced and polished,
The substrate was used for forming a garnet film by the LPE method.
R is one or more elements selected from rare earth elements.
【０００９】次に、ガーネット膜の原料であるＦｅ2 Ｏ
3 ，Ｙ2 Ｏ3 および添加物元素の酸化物と、溶剤である
ＰｂＯおよびＢ2 Ｏ3 とを混合し、縦型電気炉内に保持
された白金坩堝に充填して、約１２００℃で均質化を行
って、融液を得た。Next, Fe 2 O which is a raw material of the garnet film is used.
3 , Y 2 O 3 and an oxide of an additive element, PbO and B 2 O 3 as solvents are mixed, filled in a platinum crucible held in a vertical electric furnace, and homogenized at about 1200 ° C. And a melt was obtained.
【００１０】この融液を約９００℃前後の一定温度に保
持して、ガーネットを過飽和状態にした後、この融液中
に上述の基板を浸透し、回転させながら所定時間成長を
行った。その後、この基板を融液から引き上げ、高速度
で回転させて、ガーネット膜上の付着融液を遠心力で振
り切ることによって、ガーネット膜を形成した。After maintaining the melt at a constant temperature of about 900 ° C. to make the garnet supersaturated, the above-described substrate was permeated into the melt and grown for a predetermined time while rotating. Thereafter, the substrate was pulled up from the melt, rotated at a high speed, and the attached melt on the garnet film was shaken off by centrifugal force to form a garnet film.
【００１１】得られたガーネット膜および基板の格子定
数をＸ線回折によって測定し、ガーネット膜の飽和磁化
（４πＭｓ）および強磁性半値幅（ΔＨ）を、電子スピ
ン共鳴（ＥＳＲ）装置によって測定した。The lattice constants of the obtained garnet film and the substrate were measured by X-ray diffraction, and the saturation magnetization (4πMs) and the ferromagnetic half width (ΔH) of the garnet film were measured by an electron spin resonance (ESR) device.
【００１２】表１には基板および育成したガーネット膜
の組成を示し、表２に上記の測定の結果を示す。なお、
表１および表２中、＊印を付したものはこの発明の範囲
外のものである。Table 1 shows the compositions of the substrate and the grown garnet film, and Table 2 shows the results of the above measurements. In addition,
In Tables 1 and 2, those marked with * are out of the scope of the present invention.
【００１３】[0013]
【表１】 [Table 1]
【００１４】[0014]
【表２】 [Table 2]
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭48−99100（ＪＰ，Ａ) 特開 平２−88430（ＪＰ，Ａ) 特開 昭58−204505（ＪＰ，Ａ) 特開 昭62−119759（ＪＰ，Ａ) 特開 昭56−62381（ＪＰ，Ａ) 特開 昭62−271501（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C01G 49/00 H01L 41/00 - 41/22 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-48-99100 (JP, A) JP-A-2-88430 (JP, A) JP-A-58-204505 (JP, A) JP-A 62-99 119759 (JP, A) JP-A-56-62381 (JP, A) JP-A-62-271501 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C01G 49/00 H01L 41 / 00-41/22
Claims (1)
素から選ばれた１種類以上の元素である。）基板上に液
相エピタキシャル成長法で成長させる静磁波用Ｙ3 Ｆｅ
5 Ｏ12膜の材料となる静磁波デバイス用材料において、 前記静磁波用Ｙ3 Ｆｅ5 Ｏ12膜は、Ｂｉ，Ｇｄ，Ｌｕ，
Ｓｃ，Ｌａ，Ｇａ，Ａｌから選ばれた１種類以上の元素
を含有し、前記基板との格子定数の差が０．００１Å以
下であることを特徴とする、静磁波デバイス用材料。1. A liquid on a R 3 Ga 5 O 12 (where R is at least one element selected from rare earth elements) substrate.
Y 3 Fe for magnetostatic wave grown by phase epitaxial growth method
In a magnetostatic wave device material to be a material of a 5 O 12 film, the magnetostatic wave Y 3 Fe 5 O 12 film is made of Bi, Gd, Lu,
A material for a magnetostatic wave device, comprising one or more elements selected from Sc, La, Ga, and Al, and having a lattice constant difference from the substrate of 0.001 ° or less.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03259629A JP3089741B2 (en) | 1991-09-10 | 1991-09-10 | Materials for magnetostatic wave devices |
| EP19920115236 EP0531914A3 (en) | 1991-09-10 | 1992-09-05 | Magnetic thin film for magnetostatic-wave devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03259629A JP3089741B2 (en) | 1991-09-10 | 1991-09-10 | Materials for magnetostatic wave devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0570143A JPH0570143A (en) | 1993-03-23 |
| JP3089741B2 true JP3089741B2 (en) | 2000-09-18 |
Family
ID=17336732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03259629A Expired - Fee Related JP3089741B2 (en) | 1991-09-10 | 1991-09-10 | Materials for magnetostatic wave devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3089741B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3857948B2 (en) | 2002-04-18 | 2006-12-13 | オリオン電機株式会社 | Power protection circuit |
-
1991
- 1991-09-10 JP JP03259629A patent/JP3089741B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0570143A (en) | 1993-03-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |