JP3067907B2 - Sputtering apparatus, sputtering method, laminated film formed by the sputtering method, vacuum processing apparatus, and substrate processed by the vacuum processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus,
The present invention relates to a sputtering method, a laminated film formed by the sputtering method, a vacuum processing apparatus, and a substrate processed by the vacuum processing apparatus.

[0002]

2. Description of the Related Art

A. Regarding sputtering method and sputtering apparatus of the present invention [Prior art] Amorphous silicon (a-Si) solar cells have a problem that conversion efficiency is lower than that of crystals. As one method of improving the conversion efficiency of an amorphous silicon solar cell, a method of depositing a back reflection layer for a solar cell using a sputtering apparatus has been proposed. Here, the back surface reflection layer for a solar cell is formed by forming a transparent conductive film having high light transmittance and conductivity on a metal film having high light reflectance. However, when the back reflection layer for a solar cell is continuously formed by a roll-to-roll method, an ordinary sputtering apparatus that does not use a reactive gas (hereinafter, referred to as a “reactive layer”).
It is referred to as "normal sputtering equipment". When a metal film and a transparent conductive film are deposited by using the method (2), there is a problem that it takes time to deposit a transparent conductive film requiring an oxide.

[0003] As one means for solving this problem, FIG.
Has been proposed.

The sputtering apparatus 100 comprises four chambers: a delivery chamber 110, a first film forming chamber 120, a second film forming chamber 130, and a winding chamber 140. The first film forming chamber 120 and the second film forming chamber 130 are connected via a gate 150. In the first film forming chamber 120, there are provided a first heater 121 for keeping the long substrate 200 conveyed from the delivery chamber 110 at a predetermined temperature, and a first heater 121 for depositing a metal film on the long substrate 200. First target 12
2 are provided respectively. Note that the first target 122 is electrically connected to the first power supply 123, and a DC voltage is applied from the first power supply 122. First film formation chamber
A first sputtering gas supply 120 is connected to a first exhaust pump 125 via a first exhaust pipe 124 and supplies a _first sputtering gas S ₁ into the first film forming chamber 120. Means (not shown) and the first gas supply pipe 126
Are communicated through. In the second film forming chamber 130, a second heater for keeping the long substrate 200 conveyed from the first film forming chamber 120 via the gate 150 at a predetermined temperature is provided.
131 and a second target 132 for depositing a transparent conductive film on the metal film of the long substrate 200 are provided. Note that the second target 132 is electrically connected to the second power supply 133, and a DC voltage is applied from the second power supply 133. The second film forming chamber 130 includes a second exhaust pump
135 and a second exhaust pipe 134, and a second sputtering gas S
_{The second} gas supply pipe 136 is connected to a second sputtering gas supply means (not shown) for supplying a second gas, and a reactive gas R is supplied into the second film forming chamber 130. It communicates with a gas supply means (not shown) via a reactive gas supply pipe 137.

[0005] In the sputtering apparatus 100, ordinary sputtering is performed in a first film forming chamber 120, and a long substrate 200 is formed.
After the metal film is deposited thereon, reactive sputtering (hereinafter, referred to as “reactive sputtering”) using the reactive gas R is performed in the second film forming chamber 130, and the long substrate 20 is formed.
A transparent conductive film is deposited on the 0 metal film. That is, the sputtering apparatus 100 combines normal sputtering and reactive sputtering to shorten the deposition time of a transparent conductive film requiring an oxide and facilitate continuous film formation by a roll-to-roll method. .

[Problems to be Solved by the Invention] However, the above-mentioned conventional sputtering apparatus 100 has the following problems.

(1) Problem caused by backflow of reactive gas R into first film forming chamber 120 In sputtering apparatus 100, first sputtering gas S ₁ is used in _first film forming chamber 120 to generate metal. A film is deposited, and a second sputtering gas S is deposited in the second deposition chamber 130.
_A transparent conductive film is deposited using the reactive gas R and the reactive gas R. The reactive gas R supplied to the second film forming chamber 130 is supplied to the first film forming chamber 120 through the gate 150. And adversely affects the metal film deposited in the first deposition chamber 120,
There is a problem that the conversion efficiency of the amorphous silicon solar cell is reduced. For example, when an aluminum layer is deposited in the first film forming chamber 120 and the film quality of the deposited aluminum layer is evaluated, the aluminum layer is oxidized by a reactive gas R such as oxygen (O ₂ ) and has a high resistance and high reflection. An adverse effect such as a reduction in the rate has occurred, which has led to a decrease in the conversion efficiency of the amorphous silicon solar cell.

(2) Problems Caused by Reactive Gas R Diffusion In order to make the film quality of the transparent conductive film deposited in the second film forming chamber 130 uniform, a long substrate is required on the second target 132. It is necessary to supply the reactive gas R so as to be evenly distributed over the entire surface of 200. However, in the sputtering apparatus 100, the reactive gas R is supplied from the reactive gas supply pipe 137 having an outlet on the left side in the drawing of the second film forming chamber 130 to the second gas.
Thus, the reactive gas R could not be uniformly distributed on the second target 132 on which the transparent conductive film was deposited on the long substrate 200.
As a result, the quality of the deposited transparent conductive film becomes non-uniform, and there is a problem that the conversion efficiency of the amorphous silicon solar cell is reduced due to non-uniformity of the transmittance and resistance of the transparent conductive film.

A first object of the present invention is to provide a sputtering method and a sputtering apparatus capable of preventing a reactive gas from flowing backward and diffusing and forming a uniform film.

B. Conventional vacuum processing apparatus [Prior art] Conventionally, in vacuum processing apparatuses such as an asher, an etcher, and a thin film forming apparatus for processing the surface of a substrate in a vacuum, a continuous substrate such as a roll-shaped long substrate is introduced. In the case where the gate valve is put into the chamber, a gate valve that holds a predetermined degree of vacuum while sandwiching the substrate has been proposed (JP-A-3-30419), and has reached a practical level.

However, in the conventional vacuum processing apparatus described above, due to recent advances in semiconductor integration, the necessity of reducing the impurity component of the gas during the reaction and the suspension of the vacuum processing apparatus have been raised. The necessity of reducing the time (time required for maintenance and start-up of the vacuum processing apparatus) causes a problem that a higher vacuum-to-atmosphere shutoff performance is required.

A second object of the present invention is to provide a vacuum processing apparatus provided with a gate valve having higher vacuum cutoff performance.

[0013]

[0014]

[0015]

[0016]

[0017]

[0018]

According to the present invention, there is provided a sputtering apparatus for forming a first film by sputtering.
A second film forming chamber for forming a second film by reactive sputtering using a reactive gas, and the first film forming chamber and the second film forming chamber are connected to each other. A gate unit, means for transporting the long substrate in the longitudinal direction so as to sequentially pass through the first film forming chamber, the gate unit and the second film forming chamber, and the first film forming chamber Pressure control means for maintaining a pressure higher than the pressure in the second film formation chamber, and an orifice for supplying the reactive gas into the second film formation chamber is opposite to the orifice from the gate portion. Is provided on the gate side of the second film formation chamber so as to inject the reactive gas toward the second film formation chamber, and an exhaust port of the second film formation chamber is provided in the second film formation chamber. Is provided at a position opposite to the orifice on a side opposite to the gate portion.

According to the sputtering method of the present invention, a first film forming chamber for forming a first film by sputtering and a second film forming chamber for forming a second film by reactive sputtering using a reactive gas. The first film forming chamber and the second
In a sputtering method using a sputtering apparatus having a gate portion connecting to a film forming chamber,
While keeping the pressure in the film formation chamber higher than the pressure in the second film formation chamber, the long substrate is transported in the longitudinal direction, and the first film formation chamber, the gate section, and the second component are moved. The first film is sequentially passed through the film chamber, a first film is deposited on the long substrate in the first film formation chamber, and the gate portion of the second film formation chamber is deposited in the second film formation chamber. The reactive gas is injected from the orifice provided on the side of the second film forming chamber toward the side opposite to the gate section, and the exhaust gas is provided in the second film forming chamber at a position opposite to the orifice on the side opposite to the gate section. The method is characterized in that the second film formation chamber is evacuated from an opening to deposit a second film on the first film formed on the long substrate.

Here, the first film may be a metal film having high reflectivity to light, and the second film may be a transparent conductive film having high light transmittance and conductivity.

The laminated film of the present invention is formed of a metal film and a transparent conductive film on a substrate by the above-described sputtering method of the present invention.

The vacuum processing apparatus of the present invention is loaded and placed on a first vacuum chamber whose inside is kept at atmospheric pressure and vacuum, and on a long substrate or a substrate support which is continuously loaded. In a vacuum processing apparatus comprising: a second vacuum chamber for performing a predetermined process on a substrate; and a gate section that separates the first vacuum chamber and the second vacuum chamber, the gate section includes an elastic body. A gate movable portion having a valve seat having a surface having the same surface, and the gate movable portion having the elongated substrate or the substrate support interposed between the support member having a surface made of an elastic body and the valve seat. At least two sets of gate drive mechanisms for moving the member in the vertical direction with respect to the surface of the member are provided apart from each other along the substrate transport direction.

Further, an exhaust mechanism for exhausting a space between the two sets of valve seats or a sealing mechanism for sealing an inert gas at a predetermined pressure in the space may be provided.

The substrate of the present invention is subjected to a film forming process or an etching process using the vacuum processing apparatus of the present invention.

[0025]

[0026]

[0027]

[0028]

[0029]

[0030]

[0031]

According to the sputtering apparatus of the present invention, there is provided a pressure control means for maintaining the first film forming chamber at a higher pressure than the second film forming chamber, and the reactive gas is supplied to the second film forming chamber. An orifice for supplying a reactive gas from the gate portion to the gate portion side of the second film forming chamber so as to inject a reactive gas from the gate portion toward the opposite side; Is provided at a position opposite to the gate portion of the second film formation chamber and opposite to the orifice, so that the reactive gas flows backward from the second film formation chamber to the first film formation chamber. It becomes difficult. Further, since the reactive gas can be uniformly distributed along the surface of the substrate, the quality of the film deposited on the substrate can be made uniform.

According to the sputtering method of the present invention, the pressure in the first film forming chamber is kept higher than the pressure in the second film forming chamber, so that the pressure from the second film forming chamber to the first film forming chamber is changed. Backflow of the reactive gas is less likely to occur.

In addition, a reactive gas is injected from the gate portion side of the second film forming chamber toward the side opposite to the gate portion, and the reactive gas is injected from the side opposite to the gate portion of the second film forming chamber. By exhausting the second deposition chamber from a position opposite to the position to be reacted, the reactive gas is forced to flow to the opposite side to the first deposition chamber. The backflow of the reactive gas into the film formation chamber can be made more difficult to occur, and the reactive gas can be uniformly distributed along the surface of the long substrate, so that the reactive gas is deposited on the long substrate. The film quality of the transparent conductive film can be made uniform.

[0034] In the vacuum processing apparatus of the present invention, the gate section has a gate movable section having a valve seat having a surface made of an elastic body;
A gate drive mechanism for vertically moving the gate movable part with respect to the surface of the support member so as to sandwich the long substrate or the substrate support between the support member having the surface made of the elastic body and the valve seat; Since at least two sets are provided apart from each other along the direction, even if the first vacuum chamber is repeatedly set to the atmospheric pressure and the vacuum, the second vacuum chamber can be kept at the vacuum. Further, by providing an exhaust mechanism for exhausting a space between the two sets of valve seats or an enclosing mechanism for enclosing an inert gas at a predetermined pressure in the space, the second vacuum chamber can be kept more vacuum. .

[0035]

[0036]

[0037]

Embodiments of the present invention will be described below with reference to the drawings.

A. 1. Sputtering Method and Sputtering Apparatus of the Present Invention FIG. 1 is a schematic configuration diagram showing one embodiment of the sputtering apparatus of the present invention.

The sputtering apparatus 1 has the following points.
This is different from the conventional sputtering apparatus 100 shown in FIG.
Become. (1) The pressure in the first film forming chamber 20 is increased in the second film forming chamber 30.
Of the first exhaust pipe 24, which is kept higher than the pressure of
Through the first automatic pressure controller 28 and the second exhaust pipe 34
A second automatic pressure controller 38 is included. (2) As shown in FIG. 2, the tip of the reactive gas supply pipe 37
The gate section 50 of the second film forming chamber 30 (FIG. 1)
Reactive gas from the side toward the side opposite to the gate section 50
An orifice 39 for injecting R is included. (3) As shown in FIG. 2, the second component of the second exhaust pipe 34 is
Exhaust port 34 on the membrane chamber 30 side ₁ Is the game in the second film forming chamber 30.
Facing the orifice 39 on the opposite side of the
Position.

Therefore, in the sputtering apparatus 1,
The following effects can be obtained. (1) Prevention of Backflow of Reactive Gas R By the first automatic pressure controller 28 and the second automatic pressure controller 38, the pressure P ₁ in the _first film forming chamber 20 is set in the second film forming chamber 30. Is always higher than the pressure P ₂ (ie, P ₁
> P ₂ ), the first film formation chamber 30
Backflow of the reactive gas R into the film formation chamber 20 can be prevented. Further, the reactive gas R is supplied to the orifice 39.
From the gate and toward the side opposite to the gate 50,
Since by venting the reactive gas R from the exhaust port 34 ₁ provided at mutually opposing positions with the orifice 39, the reactive gas R is to be forced to flow to the opposite side of the first film forming chamber 20, the The reverse flow of the reactive gas R from the second film formation chamber 30 to the first film formation chamber 20 can be made more difficult to occur. (2) as well as injected toward the opposite side of the diffusion preventing the reactive gas R reactive gas R and the gate portion 50 from the orifice 39, a reactive gas from the exhaust port 34 ₁ which is positioned to face the orifice 39 By evacuating R, the reactive gas R can be uniformly distributed along the surface of the long substrate 200 facing the second target 32, so that the transparent conductive material deposited on the long substrate 200 The film quality of the film can be made uniform.

The sputtering apparatus 1 shown in FIG.
In the embodiment, only one orifice 39 is provided. However, the above effect can be further enhanced by providing a plurality of orifices in a line in the width direction of the long substrate 200 (perpendicular to the plane of FIG. 1). Further, by providing the first automatic pressure controller 28 and the second automatic pressure controller 38,
Although the pressure P ₁ in the film forming chamber 20 is always kept higher than the pressure P ₂ in the second film forming chamber 30, the first exhaust pump 25 and the second exhaust pump 35 have this function. Is also good.

Next, the sputtering apparatus 1 shown in FIG.
And a high-frequency plasma CVD apparatus shown in FIG.
It is called "RF plasma CVD apparatus". An example of a prototype of an amorphous silicon solar cell manufactured using a) 60 will be described. As shown in FIG. 4, a prototype amorphous silicon solar cell 90 includes a substrate 91, a metal film 92 deposited on the substrate 91, a transparent conductive film 93 deposited on the metal film 92, and a transparent conductive film 93. N-type a formed on film 93
-Si layer 94 and i-layer formed on n-type a-Si layer 94.
A-type a-Si layer 95, a p-type microcrystalline a-Si layer 96 formed on the i-type a-Si layer 95, a transparent electrode 97 formed on the p-type microcrystalline a-Si layer 96, And a current collecting electrode 98 formed on the transparent electrode 97.

[Trial Production Example A1] Using the sputtering apparatus 1 shown in FIG. 1, the metal film 9 was prepared under the production conditions shown in Table A1.
An Ag film having a thickness of 0.3 μm as No. 2 was deposited on the long substrate 200 (substrate 91) in the first film forming chamber 20.

[0044]

[Table 1] Subsequently, a ZnO film having a thickness of 1 μm was deposited as the transparent conductive film 93 on the metal film 92 in the second film formation chamber 30 under the preparation conditions shown in Table A2.

[0045]

[Table 2] When the concentration of the reactive gas R (O ₂ ) in the first film forming chamber 20 was analyzed by Q-mass, O ₂ = 1p
pm.

Subsequently, a metal film 92 and a transparent conductive film 93 are formed.
The substrate 91 on which is deposited the RF plasma CV shown in FIG.
After being set in the deposition chamber 61 of the D device 60, the deposition chamber 6
1 was evacuated by an exhaust pump 62. Then, after the source gas is supplied into the deposition chamber 61 by the gas supply means 63, R
By supplying high-frequency power from the F power supply 64 to the RF electrode 65 and generating a discharge between the electrically grounded substrate 91 and the RF electrode 65 to decompose the source gas, the n-type a-
Si layer 94, i-type a-Si layer 95 and p-type microcrystal a-
An Si layer 96 was sequentially formed on the transparent conductive film 93. In addition,
The formation of the n-type a-Si layer 94 is performed by using SiH ₄ as a source gas.
And PH ₃ and the substrate
While maintaining the temperature of 300 ° C., the deposition was carried out by glow discharge decomposition method so as to have a thickness of about 100 °. Also,
The i-type a-Si layer 95 is formed by using SiH ₄ as a source gas.
Was performed in the same manner as in the case of the n-type a-Si layer 94, except that the layer was used. Further, the p-type microcrystalline a-Si layer 96 is formed by using SiH
Except that ₄ , BF ₃ and H ₂ were used, the deposition was performed by depositing a thickness of about 100 ° similarly to the n-type a-Si layer 94. The n-type a formed by the glow discharge decomposition method
Since about 10% of hydrogen atoms (H) are contained in the -Si layer 94 and the like, they are generally described as "a-Si: H". ".

Subsequently, as the transparent electrode 97, an ITO film was formed to a thickness of about 800.degree.
After being formed on the Si layer 96, a current collecting electrode 98 having a thickness of 1 μm was formed on the transparent electrode 97 by the EB vapor deposition method to complete the amorphous silicon solar cell 90.

By the above method, ten amorphous silicon solar cells 90 were prepared, and each amorphous silicon solar cell 90 had an AM 1.5 (100 mW / cm ² ).
When the characteristics were evaluated under light irradiation, the photoelectric conversion efficiency η was 9.8 ± 0.3%, and excellent conversion efficiency was obtained with good reproducibility.

[Comparative Example A1] An amorphous silicon solar cell 90 was prepared in the same manner as in Prototype Example A1, except that the orifice 39 in the second film forming chamber 30 was not used. When the concentration of the reactive gas R (O ₂ ) in the first film forming chamber 20 at this time was analyzed by Q-mass, O ₂ = 1
It was 00 ppm. When the characteristics of the amorphous silicon solar cell 90 were evaluated, the photoelectric conversion efficiency η =
7.2 ± 0.5%.

[0050] [Comparative Example A2] and the pressure P ₁ in the first film forming chamber 20 and the pressure P ₂ of the second film forming chamber 30, respectively 5
(MTorr) and the orifice 3 of the second film forming chamber 30
An amorphous silicon solar cell 90 was prepared in the same manner as in Prototype Example A1, except that Sample No. 9 was not used. At this time, the concentration of the reactive gas R (O ₂ ) in the first film forming chamber 20 is changed to Q
When analyzed by -mass, O ₂ = 1%. When the characteristics of the amorphous silicon solar cell 90 were evaluated, the photoelectric conversion efficiency η = 2.5 ± 0.8%
Met.

Next, the sputtering apparatus 1 shown in FIG.
A description will be given of an example in which a magnetic recording medium is prototyped by using the method shown in FIG.

In this example, a Co / Cr magnetic film is deposited on the long substrate 200 in the first film forming chamber 20 using Ar gas as the first sputtering gas S ₁ , and then the second film is formed. In the film forming chamber 30, the second target 32
, An SiO intermediate layer was deposited on the Co / Cr magnetic film using an Ar gas as the second sputtering gas S ₂ and an O ₂ gas as the reactive gas R. Then, a Co / Cr magnetic film and SiO
The long substrate 200 on which the intermediate layer is deposited is delivered to the chamber 1
After resetting to 0, in the first film forming chamber 20,
Using Ar gas as the first sputtering gas S _1, it was deposited permalloy film on SiO intermediate layer. When the frequency characteristics of the magnetic recording medium thus prepared were measured using a frequency analyzer, it was confirmed that the frequency characteristics were good.

Next, the sputtering apparatus 1 shown in FIG.
An example in which a steel sheet for building materials is coated using the method will be described.

A steel plate is sent out instead of the long substrate 200 and the
After being set in the chamber 10, the first
Thus, an aluminum target is used as the first target 22.
And the first sputtering gas S₁ age
Using an Ar gas to deposit an aluminum film on a steel plate
Was. Thereafter, in the second film forming chamber 30, the second target is formed.
A Si target is used as the
Sputtering gas S _Two Ar gas and reactive gas
O as R_Two Using gas, SiO_Two Aluminum film
Deposited on the film. Steel plate for building materials manufactured in this way
In a container at a temperature of 80 ° C. and a humidity of 90%,
As a result of the endurance test for 00 hours,
I didn't come. As a result, steel sheets for building materials are generally
External effects such as rain, wind and atmospheric dust in the medium
Received by the sputtering equipment 1
Film and SiO_Two By coating the membrane,
Suppress deterioration of steel sheets for building materials, enhance durability, and act externally
It has been confirmed that the influence of the above can be suppressed.

B. Regarding First Vacuum Processing Apparatus of the Present Invention FIG. 5 is a schematic configuration diagram showing a first embodiment of the first vacuum processing apparatus of the present invention.

The vacuum processing apparatus 1000 includes a first vacuum chamber (chamber) 1010 in which the inside is repeatedly set to the atmospheric pressure and vacuum,
Continuously loaded long substrate 1001 with a vacuum inside
A second vacuum chamber (chamber) 1020 for performing a predetermined process on
It is the same as a conventional vacuum processing apparatus in that it includes a gate unit 1030 for partitioning a first vacuum chamber 1010 and a second vacuum chamber 1020. However, the vacuum processing apparatus 1000 has a gate unit 1030
Is different from the conventional vacuum processing apparatus in that it is configured as follows.

The gate portion 1030 includes a housing 1031, a support member 1032 provided on the lower surface of the housing 1031 in the figure, a first gate movable portion 1033 provided on the first vacuum chamber 1010 side of the housing 1031, 1031 second vacuum chamber 10
A second gate movable unit 1034 provided on the 20 side; a first gate driving mechanism 1035 for moving the first gate movable unit 1033 in a direction perpendicular to the support member 1032 (up and down direction in the figure); and a second gate The first gate drive mechanism 1035 includes a second gate drive mechanism 1036 for moving the movable section 1034 in a direction perpendicular to the support member 1032, and the first gate movable mechanism 1033
When it is moved to the side, the long substrate 1001 is sandwiched between the valve seat 1033 ₁ (see FIG. 21) and the support member 1032, and the second gate movable mechanism 1034 is moved by the second gate drive mechanism 1036 to the support member 1032. When it is moved to the side, the long seat 1001 is configured to be sandwiched between the valve seat 1034 ₁ (not shown) and the support member 1032. The housing 1031 of the gate 1030
Is connected to the inert gas introduction source 10 through the first vacuum valve 1041.
It is in communication with the vacuum pump 1044 via a second vacuum valve 1043 while communicating with the vacuum pump. The housing 1031 of the gate unit 1030 is provided with a pressure adjusting valve 1045.

Here, the valve seat 10 of the first gate movable portion 1033
33 ₁ and a material of the second valve seat 1034 _first material and the support member 1032 of the gate movable portion 1034 is considered the elastic body and the metal, also, as the combination thereof, the combination of four types shown in Table B1 Conceivable.

[0059]

[Table 3] Examples of the elastic body include, for example, Viton, neoprene rubber, Teflon, polypropylene, polystyrene and A
BS resin and the like. Also, as an example of a metal,
For example, aluminum, stainless steel, titanium, a surface-treated product of aluminum, a surface-treated product of stainless steel, and the like can be given.

[0060] Table in the first combination and the second combination shown in B1, the first valve seat 1034 ₁ of the valve seat 1033 ₁ and the second gate movable portion 1034 of a gate movable portion 1033 supporting member 1032
In order to maintain the degree of sealing when each of the long substrates 1001 is sandwiched between them, it is necessary that the thickness of the long substrate 1001 to be used is smaller than the elastic body crushing margin. FIG. 6 shows the first
When sandwiching the valve seat 1033 ₁ and the second long substrate 1001 of various thicknesses by the valve seat 1034 ₁ and the support member 1032 of the gate movable portion 1034 of a gate movable portion 1033 respectively, the amount collapse of the elastic member 35 is a graph showing one measurement result obtained by measuring the relationship with the amount of air leaking through a gate unit 1030. ○
The marks indicate the valve seat 1033 _{1 of} the first gate movable portion 1033 and the support member.
1032 shows the measurement result when the long substrate 1001 is sandwiched. In addition, the symbol “◇” indicates a valve seat of the first gate movable portion 1033.
1033 shows the measurement results when sandwiching the long substrate 1001, respectively by the _first and second valve seat 1034 ₁ and the support member 1032 of the gate movable portion 1034. From the measurement results, the following was found. (1) First gate movable section in consideration of practical exhaust characteristics
When only one of 1033 and the second gate movable portion 1034 is used, it has been found that the thickness of the long substrate 1001 is desirably not more than 2/3 of the elastic member's crush. (2) In the case where both the first gate movable portion 1033 and the second gate movable portion 1034 are used, even if the thickness of the long substrate 1001 is the same as that of the elastic body, it can withstand actual use. .

The sealability may be in the order of the third combination, the first and fourth combinations, and the second combination shown in Table B1, and the durability may be in the order of the second combination, the second combination, and the second combination. The order of the first, fourth and third combinations may be used.

In the gate section 1030, the housing 10 between the first gate movable section 1033 and the second gate movable section 1034
When evacuating the 31, after sandwiching the long substrate 1001, respectively by the first valve seat 1034 ₁ and the support member 1032 of the valve seat 1033 ₁ and the second gate movable portion 1034 of a gate movable portion 1033, The second vacuum valve 1043 is opened and evacuated by the vacuum pump 1044. When introducing an inert gas into the housing 1031 between the first gate movable portion 1033 and the second gate movable portion 1034, the second vacuum valve 1043 is closed and the first vacuum valve 1041 is closed. Then, the pressure adjustment valve 1045 is opened, and an inert gas is introduced into the housing 1031 from the inert gas introduction source 1042, and a predetermined residual pressure state is set. Note that examples of the type of the inert gas include an argon gas, a helium gas, and a nitrogen gas.

The inside of the first vacuum chamber 1010 is brought into the atmospheric pressure state, the inside of the second vacuum chamber 1020 is brought into the vacuum state, and helium is introduced from the first vacuum chamber 1010 side. The amount of helium that has entered the inside of the
Measurements were taken with a helium leak detector mounted inside 20. First gate movable section 1033 and second gate movable section 1034
And the case where nitrogen gas as an inert gas is introduced into the housing 1031 between the first gate movable portion 1033 and the second gate movable portion 1034. In this case, the amount of helium gas entering the second vacuum chamber 1020 was less than the measurement limit (1.0 × 10 ⁻⁸ Torr 1 / sec) of the helium leak detector.

In the vacuum processing apparatus 1000 of the present embodiment, the gate unit 1030 has two gate movable units (the first gate movable unit 1033).
And the second gate movable portion 1034), the same effect can be obtained regardless of whether the number of gate movable portions is one or three or more.

FIG. 7 is a schematic configuration diagram showing an optical disk film forming apparatus which is a second embodiment of the first vacuum processing apparatus of the present invention.

The optical disk film forming apparatus 1100 includes a substrate loading chamber 1110 in which the inside is repeatedly set to the atmospheric pressure and a vacuum, first to fourth film forming chambers 1121 to 1124 in which the inside is evacuated, and a repeated inside. A substrate unloading chamber 1130 at atmospheric pressure and vacuum, a first gate 1140 partitioning a substrate input chamber 1110 and a first film forming chamber 1121, a fourth film forming chamber 1124 and a substrate unloading chamber 1130 The second embodiment is the same as the conventional optical disk film forming apparatus in that the second optical system includes a second gate unit 1150 for partitioning the optical disk. However, the optical disc film forming apparatus 1100 has a first gate unit 1140 and a second gate unit.
1150 differs from the conventional optical disc film forming apparatus in that it has the same configuration as the gate section 1030 shown in FIG.

The substrate input chamber 1110 is provided with a first vacuum valve.
The first gate portion 1140 is connected to the vacuum pump 1161 via the second vacuum valve 1163 via the 1162, and the first to fourth film forming chambers 1121 to 1121.
1124 is connected to a vacuum pump 1161 through a third vacuum valve 1164.
The second gate portion 1150 is in communication with the vacuum pump 1161 via the fourth vacuum valve 1165, and the substrate unloading chamber 1130 is in communication with the vacuum pump 1161 via the fifth vacuum valve 1166. Have been. In addition, the optical disc film forming apparatus 11
In the case of 00, the substrate 1101 has a carrier belt 1170 as a support.
, The substrate input chamber 1110, the first gate 1140,
First film forming chamber 1121, second film forming chamber 1122, third film forming chamber 11
23, a fourth film forming chamber 1124, a second gate unit 1150, and a substrate unloading chamber 1130.

Next, the operation of the optical disc film forming apparatus 1100 will be described.

A plurality of substrates 1101 are set in the substrate loading chamber 1110 with the inside of the substrate loading chamber 1110 kept at atmospheric pressure. At this time, the first to fourth film formation chambers 1121 to 1124
Are closed only the first gate movable portion 1143 of the first gate portion 1140 and the third vacuum valve
After 1164 is opened and evacuated by the vacuum pump 1161,
The second gate movable section 1144 of the first gate section 1140 is closed to maintain a predetermined degree of vacuum. Subsequently, the first vacuum valve 1162 is opened, and the inside of the substrate loading chamber 1110 is evacuated by the vacuum pump 1161. After the inside of the substrate loading chamber 1110 reaches a predetermined pressure, the first gate movable section 1143 and the second gate movable section 1144 of the first gate section 1140 are opened, and the substrate 1101 is sequentially placed on the carrier belt 1170. By being placed, the substrate 1101 is placed in the first to fourth deposition chambers 1121.
To 1124.

In the first film forming chamber 1121, a silicon nitride film (thickness: 800 °) as a base protective layer is formed on the substrate 1101 by sputtering. In the second film formation chamber 1122,
A TbFeCo film (thickness: 300 °) as a recording layer is formed on the substrate 1101 by sputtering. Third deposition chamber
In 1123, a silicon nitride film (thickness 8
00) is formed on the substrate 1101 by sputtering. In the fourth film formation chamber 1124, an aluminum film (thickness: 500 °) as a reflective layer is formed on the substrate 1101 by sputtering.

When the carrier belt 1170 approaches the end or when the substrate 1101 is exhausted, the valve seat of the first gate movable section 1143 of the first gate section 1140 and the valve of the second gate movable section 1144 are removed. After the carrier belt 1170 is sandwiched between the seat and the support member (not shown) of the first gate portion 1140,
The first vacuum valve 1162 is closed, and the inside of the substrate loading chamber 1110 is brought to atmospheric pressure. Then a new carrier belt 11
After 70 or a new substrate 1101 is set in the substrate loading chamber 1110, the above-described procedure is repeated.

Substrate 1101 in Optical Disk Film Forming Apparatus 1100
And take-up of the wound carrier belt 1170
After the carrier belt 1170 is sandwiched between the valve seat of the first gate movable portion 1153 and the valve seat of the second gate movable portion 1154 of the gate portion 1150, and the support member (not shown) of the second gate portion 1150. , The fifth vacuum valve 1166 is closed, and the substrate removal chamber 11 is closed.
It is performed by setting the inside of 30 to atmospheric pressure.

Table B2 shows the optical disk film forming apparatus of this embodiment.
The results of comparison of the operation rates between the case where 1100 is used and the case where a conventional optical disk film forming apparatus is used are shown. In addition, the material of the valve seat of each of the gate movable parts 1143, 1144, 1153, and 1154 and the material of each of the support members are both elastic bodies. The reason for this is that, in film formation of a magneto-optical disk, a high vacuum sealing property is required to prevent oxidation of a target sensitive to oxygen or moisture. Further, the measurement of the operation rate in the conventional optical disc film forming apparatus is performed by using the optical disc film forming apparatus 11 of the present embodiment.
First gate movable section 11 of first gate section 1140 at 00
43 and the second gate movable portion 1144 of the second gate portion 1150 was closed.

[0074]

[Table 4] Note 1) Pause time = time from leak to vacuum degree Note 2) Operating rate = film formation time / (film formation time + pause time) x 1
From the comparison results shown in Table B2, in the optical disc film forming apparatus 1100 of the present embodiment, the first to fourth film forming chambers 1121 to 1124 can be kept in a vacuum, so that the pause time can be reduced by the conventional optical disc forming apparatus. It can be seen that it can be reduced to 81% of the film forming apparatus. As a result, the operation rate can be improved from 88% of the conventional optical disc film forming apparatus to 90%.

Table B3 shows the optical disk film forming apparatus of this embodiment.
In 1100, when the first gate movable section 1143 and the second gate movable section 1144 of the first gate section 1140 are closed, the second vacuum valve 1163 is opened, and the first gate section 1140 of the first gate section 1140 is opened. This figure shows the result of comparing the case where the space between the first gate movable section 1143 and the second gate movable section 1144 is evacuated by the vacuum pump 1161 and the space is not evacuated.

[0076]

[Table 5] Note 1) Pause time = time from leak to vacuum degree Note 2) Operating rate = film formation time / (film formation time + pause time) x 1
00% According to the comparison result shown in Table B3, the space between the first gate movable section 1143 and the second gate movable section 1144 of the first gate section 1140 is evacuated to reduce the downtime by 80%. % Can be reduced. Therefore, the presence or absence of the exhaust mechanism can be selected according to the required specification of the optical disk film forming apparatus.

In the optical disc film forming apparatus 1100 of this embodiment,
Although the carrier belt 1170 has an end, the present invention is not limited to this, and a loop-shaped carrier belt may be used so that addition or replacement of the carrier belt is unnecessary.

FIG. 8 is a schematic structural view showing an etching apparatus which is a third embodiment of the first vacuum processing apparatus of the present invention.

The etching apparatus 1200 is for etching a roll-shaped long substrate 1201 in a vacuum. The etching apparatus 1200 includes a substrate charging chamber 1210 in which the inside is repeatedly set to the atmospheric pressure and a vacuum, and a processing chamber 1220 in which the inside is evacuated.
And a substrate unloading chamber whose interior is repeatedly evacuated to atmospheric pressure and vacuum
A conventional etching apparatus includes a first gate unit 1240 for partitioning a processing chamber 1220 from a substrate input chamber 1210 and a processing chamber 1220, and a second gate unit 1250 for partitioning a processing chamber 1220 and a substrate unloading chamber 1230. Is the same as However, the etching equipment 12
00 is that the first gate portion 1240 and the second gate portion 1250 have the same configuration as the gate portion 1030 shown in FIG.
Different from conventional etching equipment.

The substrate loading chamber 1210 is provided with a first vacuum valve.
It communicates with the vacuum pump 1261 through 1262, and the processing chamber
1220 is connected to a vacuum pump 1261 via a second vacuum valve 1263, and the substrate unloading chamber 1230 is connected to the third vacuum valve 1212.
It is in communication with a vacuum pump 1261 through 64.

Next, the operation of the etching apparatus 1200 will be described.

The long substrate 1201 is set in the substrate loading chamber 1210 with the inside of the substrate loading chamber 1210 kept at atmospheric pressure. At this time, the inside of the processing chamber 1220 is the first gate portion.
After only the first gate movable portion 1143 of the 1240 is closed and the second vacuum valve 1263 is opened and evacuated by the vacuum pump 1261, the second gate movable portion 1244 of the first gate portion 1240 is closed. To a predetermined degree of vacuum.
Subsequently, the first vacuum valve 1262 is opened, and the substrate loading chamber is opened.
The inside of 1210 is evacuated by vacuum pump 1261. After the inside of the substrate loading chamber 1210 reaches a predetermined pressure, the first gate movable section 1243 and the second gate movable section 1244 of the first gate section 1240 are opened, so that the long substrate 1201 is moved to the processing chamber.
The wafer is transported to 1220 and subjected to an etching process. The long substrate 1201 that has been subjected to the etching process is the second gate portion 1250
Is transported to the substrate unloading chamber 1260 and wound up.

A long substrate set in the substrate loading chamber 1210
When 1201 approaches the end, the valve seat of the first gate movable section 1243 of the first gate section 1240 and the second gate movable section
Support member for valve seat 1244 and first gate 1240 (not shown)
After the long substrate 1201 is sandwiched between the first vacuum valve 12
62 is closed, and the inside of the substrate loading chamber 1210 is brought to atmospheric pressure. Thereafter, a new long substrate 1201 is set in the substrate loading chamber 1210 and connected to the rest of the previous long substrate 1201, and then the above-described procedure is repeated, whereby the new long substrate 1201 is subjected to an etching process. You.

When the etching process of all the long substrates 1201 is completed, the first gate movable portion of the second gate portion 1250
1253 valve seat and second gate movable part 1254 valve seat and second
Long substrate 1201 with the support member (not shown) of the gate portion 1250
Is sandwiched, the third vacuum valve 1264 is closed, and the inside of the substrate extracting chamber 1230 is brought to atmospheric pressure. Thereafter, after all the long substrates 1201 are taken out of the substrate unloading chamber 1230, the third vacuum valve 1264 is opened, and the inside of the substrate unloading chamber 1230 is evacuated by the vacuum pump 1261. afterwards,
The first gate movable section 1253 and the second gate movable section 1254 of the second gate section 1250 are opened.

Table B4 shows the etching apparatus 1200 according to the present embodiment.
7 shows the results of comparison of the operation rates between the case where is used and the case where a conventional etching apparatus is used. In addition, each gate movable part 12
The material of the valve seats 43, 1244, 1253, and 1254 and the material of each support member were both metal. The reason is that a high degree of vacuum is not required for the etching process at room temperature. In addition, the measurement of the operation rate in the conventional etching apparatus is performed by using the first gate unit 12 in the etching apparatus 1200 of the present embodiment.
This was performed by keeping the 40 second gate movable section 1244 and the first gate movable section 1143 of the second gate section 1250 closed.

[0086]

[Table 6] Note 1) Pause time = time from leak to the evacuation of vacuum degree Note 2) Operating rate = etching time / (etching time + pause time) x 100% From the comparison result shown in Table B4, in the etching apparatus 1200 of this embodiment, Since the processing chamber 1220 can be maintained in a vacuum, the time required for evacuation can be reduced to 20% of that of the conventional etching apparatus, and the downtime can be reduced to 47% of that of the conventional etching apparatus. As a result, the operation rate can be improved from 84% of the conventional etching apparatus to 92%.

Note that, instead of exhausting the space between the first gate movable portion 1243 and the second gate movable portion 1244 of the first gate portion 1240, an inert gas is introduced into the space and the residual pressure is introduced. Even in the state, similar results could be obtained.

C. Second vacuum processing apparatus of the present invention FIG. 9 is a schematic configuration diagram showing a first embodiment of the second vacuum processing apparatus of the present invention.

The vacuum processing apparatus 2000 includes a vacuum vessel 2001 electrically grounded, and a substrate 20 provided in the vacuum vessel 2001.
A plasma generation electrode 2002 for generating a plasma Pm having the opposite polarity to the electric charge charged in the vacuum vessel 2001 in the vacuum vessel 2001.
And an electrode for plasma generation provided outside the vacuum vessel 2001
Power supply for plasma generation 2003 to supply power to 2002
A vacuum pump 2004 provided outside the vacuum vessel 2001 for evacuating the inside of the vacuum vessel 2001, an exhaust pipe 2005 communicating the vacuum vessel 2001 and the vacuum pump 2004, and a valve 2006 interposed in the exhaust pipe 2005. And In addition, a substrate made of an insulator
2010 is placed opposite to the plasma generating electrode 2002 in the vacuum vessel 2001.

Next, the operation of the vacuum processing apparatus 2000 when the charge of the charged substrate 2010 is removed will be described.

Electrodes 2002 for generating plasma in vacuum vessel 2001
And the substrate 2010 is placed. At this time, assuming that the base 2010 is charged and has a potential V ₀ (normally, a potential of several thousand volts), a grounded vacuum vessel via the base 2010 is provided.
The potential distribution between the electrode 2001 and the plasma generating electrode 2002 is, for example, as shown in FIG.
When the potential V ₀ is from 01 to the base 2010, the potential increases in proportion to the distance from the vacuum vessel 2001 to the base 2010, and
The potential V ₀ from the substrate 2010 to the plasma generating electrode 2002 of the potential is "0", the plasma generating electrode 2002 from the substrate 2010
The potential decreases in proportion to the distance to.

In order to remove the charge from the charged substrate 2010, the vacuum pump 2004 is started and then the valve 2006 is opened to evacuate the vacuum vessel 2001 in which the substrate 2010 is placed. At the time when the inside of the vacuum vessel 2001 reaches a predetermined pressure, the plasma generation power supply 2003 is turned on, and power is supplied from the plasma generation power supply 2003 to the plasma generation electrode 2002,
Plasma Pm of opposite polarity to the charge that the substrate 2010 is charged
Is generated from the plasma generation electrode 2002 and is irradiated on the substrate 2010. Assuming that the potential of the plasma generating electrode 2002 at this time is V ₂ , the potential from the vicinity of the vacuum vessel 2001 to the vicinity of the plasma generating electrode 2002 becomes substantially constant, for example, as shown in FIG. Note that the potential V ₁ was those of several tens of volts. Accordingly, by irradiating a plasma Pm opposite polarity to the charge base 2010 is charged to the substrate 2010, the potential of the substrate 2010, a potential V ₁ from potential V ₀ several thousand volts on the order of several tens of volts For the substrate
2010 can be neutralized.

The potential V ₁ of the substrate 2010 after static elimination is as follows: V ₁ = V ₂ (S _E / S ₀ ) ⁴ (C1) where S _E = electrode area of the plasma generation electrode 2002 S ₀ = ground area ( from being represented in a vacuum area of all surfaces that are grounded containers 2001), the ground contact area S relative to the electrode area S _E
By larger _0, it can be a potential V ₁ of the substrate 2010 after neutralization almost "0".

FIG. 12 is a schematic structural view showing a second embodiment of the second vacuum processing apparatus of the present invention.

The vacuum processing apparatus 2100 includes a vacuum vessel 2101, an electrically grounded brush-like conductor 2102 provided in the vacuum vessel 2001, and a vacuum vessel 2101 provided outside the vacuum vessel 2101. Vacuum pump 2104 for evacuating and vacuum vessel
An exhaust pipe 2105 that communicates the vacuum pump 2104 with the exhaust pipe 2105 and a valve 2106 interposed in the exhaust pipe 2105 are included. Here, the reason for using the brush-like conductor 2102 is to electrically ground the base 2010 partially and locally. Note that the base body 2010 made of an insulator is usually placed facing the brush-like conductor 2102.

Next, the operation of the vacuum processing apparatus 2100 when the charged substrate 2010 is neutralized will be described.

The base 2010 is placed opposite to the brush-like conductor 2102 in the vacuum container 2101. At this time, if the base body 2010 is charged, the charged base body 2010 is subjected to static elimination.
By starting the vacuum pump 2104 and opening the valve 2106, the inside of the vacuum vessel 2101 on which the substrate 2010 is placed is evacuated.
When the inside of the vacuum vessel 2101 reaches a predetermined pressure, the substrate 2010
And the brush-like conductor 2102 are brought into contact with each other. At this time, since the brush-like conductor 2102 is electrically grounded,
The electric potential of the portion in contact with the ten brush-like conductors 2102 becomes “0”. As a result, static elimination of the base 2010 is performed.

D. FIG. 13 is a schematic diagram illustrating a thermocouple according to a first embodiment of the present invention.

The thermocouple 1300 has a first conductor 1301 and a second conductor 1302 different from each other, both ends of which are joined, and a measurement in which one end of the first conductor 1301 and one end of the second conductor 1302 are joined. It includes a magnet 1303 provided at the contact point P, and is used for temperature measurement of the solid 1310 to be measured which is attracted to the magnet 1303 by magnetic force.

When the temperature of the solid 1310 to be measured is measured using the thermocouple 1300, the magnet 1303 is attracted to a desired position of the solid 1310 to be measured, so that the thermocouple 13
The measurement contact P of 00 is brought into contact with and fixed to a desired position of the solid 1310 to be measured. Therefore, in the thermocouple 1300 of the present embodiment, the magnet 1303 is attracted to a desired position of the solid 1310 to be measured, so that the measurement contact P of the thermocouple 1300 is brought into contact with the solid 1310.
Can be accurately fixed at the desired position, the workability and repetitive reproducibility when attaching the thermocouple 1300 to the solid 1310 to be measured can be improved, and temperature measurement with good reproducibility can be performed.

FIG. 14 is a schematic diagram showing a second embodiment of the thermocouple of the present invention.

In the thermocouple 1320 of this embodiment, the magnet 1323 is
This is different from the thermocouple 1300 of the first embodiment shown in FIG. 13 in that the one end of the conductor 1321 and the one end of the second conductor 1322 are provided in the vicinity of the measurement contact point P joined. The thermocouple 1320 of this embodiment is used for measuring the temperature of the gas to be measured 1330 stored in the container 1331 communicating with the outside through the thin tube 1332. The container 1331 is made of a material that is attracted to a magnet by a magnetic force.

When measuring the temperature of the gas 1330 to be measured using the thermocouple 1320, the magnet 1323 is attracted to a desired position of the container 1331 so that the measurement contact P of the thermocouple 1321 whose position has been adjusted is adjusted. The target gas 1330 is set at a desired position by the stress of the thermocouple 1320 itself or the weight of the thermocouple 1320. At this time, as a method of adsorbing the magnet 1323 at a desired position of the container 1331, for example, a method of adsorbing the magnet 1323 at the inlet of the tube 1332 of the container 1331 and then pushing the magnet 1323 with a rod-shaped object may be used. Therefore, in the thermocouple 1320 of the present embodiment, the measurement contact P of the thermocouple 1320 can be accurately set to the desired position of the gas 1330 to be measured by attracting the magnet 1323 to the desired position of the container 1331. The workability and reproducibility of setting the thermocouple 1320 to the gas to be measured 1330 can be improved, and temperature measurement with good reproducibility can be performed.

Next, an experimental result comparing the measurement accuracy of the thermocouple according to the present invention with the conventional thermocouple will be described with reference to FIG.

In this experimental example, a lamp heater 1351 for heating a SUS substrate 1340 moving in the vacuum chamber 1350
The heating capacity of the thermocouple 1360 according to the present invention and the conventional thermocouple 13
Each was measured using 70. The thermocouple 1360 according to the present invention has the same configuration as the thermocouple 1300 of the first embodiment shown in FIG. Here, the two thermocouples 1360 and 1370 are composed of sheath thermocouples, and the temperature was measured from below the SUS substrate 1340 for experimental purposes. The two thermocouples 1360 and 1370 are taken out of the vacuum chamber 1350 via the flange 1352. Inside the vacuum chamber 1350, a mesh object 1353 used for winding two thermocouples 1360 and 1370 is provided.

The SUS substrate 1340 was moved inside the vacuum chamber 1350 at a speed of 600 mm / min in the direction indicated by the arrow. By winding the conventional thermocouple 1370 around the mesh object 1353, the measurement contact Q of the conventional thermocouple 1370 was brought into contact with the lower surface of the SUS substrate 1340 by its own stress. Where the reticulated object
The distance between the 1353 and the lower surface of the SUS substrate 1340 is about 150
mm. The measuring contact P of the thermocouple 1360 according to the present invention is:
After the thermocouple 1360 according to the present invention was wound around the net-like object 1353, the magnet 1363 was attracted to the lower surface of the SUS substrate 1340, and thereby was brought into contact with the lower surface of the SUS substrate 1340.

FIGS. 16 and 17 are graphs showing the results of the first temperature measurement of the SUS substrate 1340 using the thermocouple 1360 according to the present invention and the conventional thermocouple 1370, respectively. FIGS. 18 and 19 show the results of the second temperature measurement of the SUS substrate 1340 using the thermocouple 1360 according to the present invention and the conventional thermocouple 1370 after removing the SUS substrate 1340 after the first temperature measurement. FIG. The time “0” shown on the horizontal axis of each graph
Minute, the lamp heater 1351 is turned on, and the stationary SU
After initially heating the S substrate 1340 for 20 minutes, the SUS substrate 13
You start 40 moves.

From the first measurement results shown in FIGS. 16 and 17, it can be seen that the conventional thermocouple 1370 has an erroneous measurement at the time of initial heating and a deflection shift of the measured value at the time of substrate movement. Also, from the second measurement results shown in FIGS. 18 and 19, it can be seen that the conventional thermocouple 1370 has a shift in the measured value when the substrate is moved. Therefore, by using the thermocouple 1360 according to the present invention, it is possible to improve the measurement accuracy of the object to be measured, which is difficult to measure with the conventional thermocouple 1370.

In the thermocouple according to the present invention, a slight measurement error due to the magnetic force of the magnet may occur depending on the use range and the use method. However, this problem is caused by the fact that the direction of the lines of magnetic force is changed by the first conductor and the second conductor. The problem can be solved by providing a magnet so as to be parallel to. Further, the temperature may be calibrated by another temperature measuring device in advance.

While the thermocouple of the present invention has been described with reference to the embodiments, it is apparent that many modifications, variations, and alterations can be made without departing from the scope of the present invention.
For example, as a method of providing a magnet to a thermocouple, there are a method of bonding with an adhesive or welding by heat, a method of making it detachable using a fastening screw, a method of joining using a spring, and the like. As for the processing of magnets,
There are chamfers and light reflective coatings.

According to the first aspect of the present invention (sputtering apparatus of the present invention) and the second or third aspect of the present invention (sputtering method of the present invention), it occurs in a sputtering method combining ordinary sputtering and reactive sputtering. Since the backflow and diffusion of the reactive gas can be prevented, a uniform film can be formed.

[0112]

According to the fifth or sixth aspect of the present invention (vacuum processing apparatus of the present invention), the vacuum interruption performance can be improved, and the time required for evacuation can be shortened. Time can be reduced.

[0114]

[0115]

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing one embodiment of a sputtering apparatus of the present invention.

FIG. 2 is a view for explaining a configuration in a second film formation chamber shown in FIG. 1;

FIG. 3 shows a graph of R used in combination with the sputtering apparatus shown in FIG.
It is a schematic structure figure of F plasma CVD equipment.

FIG. 4 is a view for explaining a configuration of an amorphous silicon solar cell prototyped using the sputtering apparatus shown in FIG. 1 and the RF plasma CVD apparatus shown in FIG. 3;

FIG. 5 is a schematic configuration diagram showing a first embodiment of the first vacuum processing apparatus of the present invention.

FIG. 6 is a view showing the collapse of an elastic body when a long substrate having various thicknesses is sandwiched between a valve seat of a first gate movable section, a valve seat of a second gate movable section, and a support member shown in FIG. 5; 7 is a graph showing one measurement result obtained by measuring the relationship between the amount and the amount of air leaking through a gate valve.

FIG. 7 is a schematic configuration diagram showing an optical disc film forming apparatus which is a second embodiment of the first vacuum processing apparatus of the present invention.

FIG. 8 is a schematic configuration diagram showing an etching apparatus which is a third embodiment of the first vacuum processing apparatus of the present invention.

FIG. 9 is a schematic configuration diagram showing a first embodiment of a second vacuum processing apparatus of the present invention.

FIG. 10 is a view showing a vacuum vessel before the substrate shown in FIG. 9 is neutralized.
FIG. 4 is a diagram showing a potential distribution between a plasma generation electrode 2001 and a plasma generation electrode 2002;

FIG. 11 is a vacuum vessel after the substrate shown in FIG. 9 has been neutralized.
FIG. 4 is a diagram showing a potential distribution between a plasma generation electrode 2001 and a plasma generation electrode 2002;

FIG. 12 is a schematic configuration diagram showing a second embodiment of the second vacuum processing apparatus of the present invention.

FIG. 13 is a schematic configuration diagram showing a first embodiment of a thermocouple of the present invention.

FIG. 14 is a schematic configuration diagram showing a second embodiment of the thermocouple of the present invention.

FIG. 15 is a schematic configuration diagram of an apparatus used for one experimental result comparing measurement accuracy between a thermocouple according to the present invention and a conventional thermocouple.

FIG. 16 is a graph showing the result of the first temperature measurement of a SUS substrate using a thermocouple according to the present invention.

FIG. 17 is a graph showing the result of the first temperature measurement of a SUS substrate using a conventional thermocouple.

FIG. 18 is a graph showing the result of the second temperature measurement of the SUS substrate performed by the thermocouple according to the present invention after the SUS substrate is removed and reattached after the first temperature measurement.

FIG. 19: After removing the SUS board after the first temperature measurement, re-attaching the SUS board, and using a conventional thermocouple for the second SU
It is a graph which shows the result of having performed the temperature measurement of S substrate.

FIG. 20 is a schematic configuration diagram showing a conventional example of a sputtering apparatus proposed as one means for solving the problem of the deposition time of a transparent conductive film.

21 is a schematic configuration diagram showing a configuration of a first gate movable unit shown in FIG. 5, (A) is a front view of the first gate movable unit, and (B) is a view of the first gate movable unit. FIG. 4C is a side view, FIG. 4C is a rear view of the first gate movable section, and FIG. 4D is a bottom view of the first gate movable section.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Sputtering apparatus 10 Delivery chamber 20 1st film-forming chamber 21 1st heater 22 1st target 23 1st power supply 24 1st exhaust pipe 25 1st exhaust pump 26 1st gas supply pipe 28th 1 automatic pressure controller 30 second film forming chamber 31 second heater 32 second target 33 second power supply 34 second exhaust pipe 34 ₁ exhaust port 35 second exhaust pump 36 second gas supply Pipe 37 reactive gas supply pipe 38 second automatic pressure controller 39 orifice 40 take-up chamber 50 gate section 60 RF plasma CVD apparatus 61 deposition chamber 62 exhaust pump 63 gas supply means 64 RF power supply 65 RF electrode 66 heater 90 amorphous Silicon solar cell 91 Substrate 92 Metal film 93 Transparent conductive layer 94 n-type a-Si layer 95 i-type a-Si layer 96 p Microcrystalline a-Si layer 97 transparent electrode 98 collector electrode 200 elongated substrate S ₁ first sputtering gas S ₂ second sputtering gas R reactive gas 1000 vacuum processing apparatus 1001,1201 long substrate 1010 first vacuum Chamber 1020 Second vacuum chamber 1030 Gate valve 1031 Housing 1032 Support member 1033, 1143, 1153, 1243, 1253 First gate movable section 1033 ₁ Valve seat 1034, 1144, 1154, 1244, 1254 Second gate movable section 1035 First gate drive mechanism 1036 Second gate drive mechanism 1041 First vacuum valve 1042 Inert gas introduction source 1043 Second vacuum valve 1044 Vacuum pump 1045 Pressure adjusting valve 1100 Optical disc film forming apparatus 1110, 1210 Substrate loading chamber 1121 First film forming chamber 1122 Second film forming chamber 1123 Third film forming chamber 1124 Fourth film forming chamber 1130, 1230 Substrate unloading chamber 1140, 1240 First gate unit 1150, 1250 Second gate unit 1161 , 1261 Vacuum pump 1162, 1262 First vacuum Valves 1163, 1263 Second vacuum valve 1164, 1264 Third vacuum valve 1165 Fourth vacuum valve 1166 Fifth vacuum valve 1170 Carrier belt 1200 Etching device 1220 Processing chamber 2000, 2100 Vacuum processing device 2001, 2101 Vacuum container 2002 Electrode for plasma generation 2003 Power supply for plasma generation 2004, 2104 Vacuum pump 2005, 2105 Exhaust pipe 2006, 2106 Valve 2010 Base 2102 Brush-like conductor Pm Plasma 1300, 1320, 1360, 1370 Thermocouple 1301, 1321 First conductor 1302, 1322 Second conductor 1303, 1323, 1363 Magnet 1310 Solid to be measured 1330 Gas to be measured 1331 Container 1332 Tube 1340 SUS substrate 1350 Vacuum chamber 1351 Lamp heater 1352 Flange 1353 Reticulated object P, Q Measurement contact

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masaya Kobayashi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Gaku Kurokawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon (72) Inventor Kazumasa Takatsu 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Tokujin Sugawara 3-30-2, Shimomaruko 3-chome, Ota-ku, Tokyo Canon Inc. ( 72) Inventor Nobuo Tokutake 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-2-138467 (JP, A) JP-A-2-197559 (JP, A) JP-A-2-66158 (JP, A) JP-A-4-123755 (JP, A) JP-A-3-240947 (JP, A) JP-A-2-281420 (JP, A) JP, U) Japanese Utility Model Showa 58-127334 (JP, U) Japanese Utility Model Showa 59-37532 (JP, U) Japanese Utility Model Showa 64-15129 (JP, U) Japanese Utility Model Showa 59-37535 (JP, U) Japanese Patent Publication No. 61-44947 (JP, B2) JP-B 54-7960 (JP, B2) JP-B 2-2465 (JP, B2) (58) Fields investigated (Int. Cl. ⁷ , DB name) C23C 14/00-14 / 58 C23C 16/00-16/56

Claims (8)

(57) [Claims] A first film forming chamber for forming a first film by sputtering; a second film forming chamber for forming a second film by reactive sputtering using a reactive gas; A gate portion connecting the first film forming chamber and the second film forming chamber; and a long substrate so as to sequentially pass through the first film forming chamber, the gate portion, and the second film forming chamber. Means for transporting the reactive gas in the longitudinal direction; and pressure control means for maintaining the first film forming chamber at a higher pressure than the second film forming chamber. An orifice for supplying into the film chamber is provided on the gate portion side of the second film forming chamber so as to inject the reactive gas from the gate portion toward the opposite side; The exhaust port of the film forming chamber of the second film forming chamber is opposite to the gate section of the second film forming chamber. A sputtering apparatus, which is provided at a position facing the fiss. A first film forming chamber for forming a first film by sputtering; a second film forming chamber for forming a second film by reactive sputtering using a reactive gas; In a sputtering method using a sputtering apparatus having a film formation chamber and a gate portion connecting the second film formation chamber, the pressure in the first film formation chamber is set to be lower than the pressure in the second film formation chamber. While keeping the height high, the long substrate is transported in the longitudinal direction, and sequentially passed through the first film forming chamber, the gate portion, and the second film forming chamber, and the A first film is deposited on a long substrate, and the second film is formed in the second film forming chamber from an orifice provided on the gate side of the second film forming chamber toward a side opposite to the gate. A reactive gas is injected, and the opposite side of the second film forming chamber from the gate portion is turned off. The second film formation chamber is evacuated from an exhaust port provided at a position facing the fiss to deposit a second film on the first film formed on the long substrate. Sputtering method. 3. The method according to claim 1, wherein the first film is a metal film having a high reflectance with respect to light, and the second film is a transparent conductive film having a high light transmittance and conductivity. 3. The sputtering method according to 2. 4. A laminated film of a metal film and a transparent conductive film formed on a substrate by the sputtering method according to claim 2 or 3. 5. A predetermined process is performed on a first vacuum chamber in which the inside is set to the atmospheric pressure and a vacuum, and a long substrate which is continuously charged or a substrate which is placed and loaded on a substrate support. A vacuum processing apparatus comprising: a second vacuum chamber to be applied; and a gate section that partitions the first vacuum chamber and the second vacuum chamber, wherein the gate section has a valve seat having a surface made of an elastic body. A gate movable portion having a surface perpendicular to the surface of the support member such that the long substrate or the substrate support is sandwiched between the valve seat and the support member having a surface made of an elastic body. And at least two sets of gate driving mechanisms for moving the substrate in the direction of transport of the substrate are provided apart from each other. 6. The air conditioner according to claim 5, further comprising an exhaust mechanism for exhausting a space between the two sets of valve seats or an enclosing mechanism for enclosing an inert gas at a predetermined pressure in the space. Vacuum processing equipment. 7. A substrate that has been subjected to film formation using the vacuum processing apparatus according to claim 5. Description: 8. A substrate that has been subjected to an etching process using the vacuum processing apparatus according to claim 5.