JP3067658B2 - Wafer heat treatment equipment - Google Patents
Wafer heat treatment equipmentInfo
- Publication number
- JP3067658B2 JP3067658B2 JP29724396A JP29724396A JP3067658B2 JP 3067658 B2 JP3067658 B2 JP 3067658B2 JP 29724396 A JP29724396 A JP 29724396A JP 29724396 A JP29724396 A JP 29724396A JP 3067658 B2 JP3067658 B2 JP 3067658B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- support
- heat
- base
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、例えば、半導体
ウエハーに各種熱処理、蒸着処理を施すときに用いられ
るウエハー熱処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer heat treatment apparatus used when performing various heat treatments and vapor deposition treatments on a semiconductor wafer, for example.
【０００２】[0002]
【従来の技術】従来、上述のようなウエハーを熱処理す
る場合、例えば、図９に示すように、支持体１３の上面
側中央部に立設した複数の各支持ピン１３ａ…でウエハ
ーＡを水平に支持して熱処理し、或いは、図１０に示す
ように、支持体１４の内周縁部に形成した水平部１４ａ
でウエハーＡを水平に支持して熱処理する方法がある。2. Description of the Related Art Conventionally, when a wafer as described above is subjected to a heat treatment, for example, as shown in FIG. 9, the wafer A is horizontally moved by a plurality of support pins 13a standing upright at the center on the upper surface side of a support 13. And a heat treatment or, as shown in FIG. 10, a horizontal portion 14a formed on the inner peripheral edge of the support 14.
There is a method of performing a heat treatment while supporting the wafer A horizontally.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上述した支持
体１３によりウエハーＡを支持した場合、ウエハーＡは
中央部よりも周縁部Ａａの方が、その部分の体積に対し
て表面積が大きいため、ウエハーＡの周縁部Ａａは加熱
されやすく、その部分の熱が放熱されやすいという特性
を有している。昇温初期時には、ウエハーＡの周縁部Ａ
ａが中央部よりも急速に加熱され、降温初期時には、ウ
エハーＡの周縁部Ａａが中央部よりも急速に冷却される
ため、ウエハーＡの中央部と周縁部Ａａとに温度勾配が
生じ、周縁部Ａａに結晶転移（ディスロケーション＝一
般的にはスリップ）が多数生じやすいという問題点を有
している。また、各支持ピン１３ａ…により支持した部
分にウエハーＡ自体の自重が付加されるので、熱処理時
に起きる反りや熱膨張の差により摩擦が生じたり、自重
の集中する部分に歪みが生じたりするため、その各支持
ピン１３ａ…により支持された部分に結晶転移が生じる
のを回避することができない。However, when the wafer A is supported by the support 13 described above, the peripheral area Aa of the wafer A has a larger surface area with respect to the volume of that part than the central part. The peripheral portion Aa of the wafer A has a characteristic that it is easily heated, and the heat in that portion is easily radiated. At the beginning of the temperature rise, the peripheral portion A of the wafer A
a is heated more rapidly than the central part, and at the beginning of the temperature drop, the peripheral part Aa of the wafer A is cooled more rapidly than the central part, so that a temperature gradient occurs between the central part and the peripheral part Aa of the wafer A, There is a problem that a large number of crystal transitions (dislocation = generally slip) are likely to occur in the portion Aa. In addition, since the weight of the wafer A itself is added to the portion supported by the support pins 13a..., Friction occurs due to the difference in warp and thermal expansion that occur during heat treatment, and distortion occurs in the portion where the weight is concentrated. It is not possible to avoid the occurrence of crystal transition in the portions supported by the support pins 13a.
【０００４】例えば、８インチのシリコンウエハーを、
窒素雰囲気中に於いて２５℃／secのレートで昇温し、
約１２００℃に１分間保持して熱処理した試験品をＸ線
トポグラフで結晶転移の発生状況を観察した結果、図１
１に示すように、各支持ピン１３ａ…により支持された
部分には、その支持点を中心に直径が約７mm〜約８mmの
大きさとなる領域に結晶転移が生じ、周縁部Ａａには、
約１０mmの範囲に結晶転移が生じることが確認された。
また、摩擦や歪みの生じた部分にも結晶転移が起きやす
く、ウエハーＡ全体を均一に熱処理することができない
ため、不良部分が多く発生し、１枚のウエハーＡから得
られる半導体（ＩＣ）の個数が少なく、歩留まりが悪い
という問題点を有している。For example, an 8-inch silicon wafer is
The temperature is raised at a rate of 25 ° C./sec in a nitrogen atmosphere,
As a result of observing the state of the occurrence of crystal transition by X-ray topography, the test specimen which was heat-treated while being kept at about 1200 ° C. for 1 minute was observed.
As shown in FIG. 1, in the portion supported by each of the support pins 13a, crystal transition occurs in a region having a diameter of about 7 mm to about 8 mm around the support point, and the peripheral portion Aa has:
It was confirmed that crystal transition occurred in a range of about 10 mm.
In addition, crystal transition is likely to occur in a portion where friction or distortion has occurred, and the entire wafer A cannot be heat-treated uniformly. Therefore, many defective portions are generated, and a semiconductor (IC) obtained from one wafer A is hardly used. There is a problem that the number is small and the yield is poor.
【０００５】また、支持体１４でウエハーＡを支持した
場合、支持体１４の水平部１４ａによりウエハーＡの周
縁部Ａａを平面的に支持するため、上述した支持体１３
よりも接触面積が大きく、その接触部分の熱処理温度が
低くなるため、ウエハーＡ全体を均一に熱処理すること
が困難である。且つ、ウエハーＡの周縁部Ａａ全体に結
晶転移が生じるだけでなく、熱処理を繰り返す度に結晶
転移が内側に成長し、結晶転移の生じる部分が大きくな
るため、歩留まりが悪くなるという問題点を有してい
る。When the wafer A is supported by the support 14, the peripheral portion Aa of the wafer A is supported by the horizontal portion 14a of the support 14 in a planar manner.
Therefore, it is difficult to uniformly heat treat the entire wafer A because the contact area is larger than that of the contact area and the heat treatment temperature of the contact portion is lower. In addition, not only the crystal transition occurs in the entire peripheral portion Aa of the wafer A, but also the crystal transition grows inside each time the heat treatment is repeated, and the portion where the crystal transition occurs becomes large, so that the yield is deteriorated. doing.
【０００６】この発明は上記問題に鑑み、熱処理時に付
与される熱を保持体に蓄熱して、同保持体に蓄熱された
熱をウエハーの周縁部に熱伝導することにより、昇温初
期時及び降温初期時に於いて、ウエハーの中央部よりも
周縁部の方が急速に加熱及び冷却されるのを抑制でき、
ウエハー全体を均一に熱処理することができるウエハー
熱処理装置の提供を目的とする。In view of the above problems, the present invention stores heat applied during heat treatment in a holder, and conducts the heat stored in the holder to the peripheral portion of the wafer, so that the heat can be stored at the beginning of the temperature increase and at the initial stage. At the beginning of cooling, the peripheral portion can be suppressed from being heated and cooled more rapidly than the central portion of the wafer,
It is an object of the present invention to provide a wafer heat treatment apparatus capable of uniformly heat treating the entire wafer.
【０００７】[0007]
【課題を解決するための手段】請求項１記載の発明は、
加熱炉の下部の側部にウエハーを搬入・搬出する搬入口
・搬出口を形成し、上記加熱炉の下部に基台を配設し
て、該基台の上面側中央部に凹状収納部を形成し、上記
基台の凹状収納部の底面中央部に、台本体の上面側に前
記搬入口・搬出口を介して搬入・搬出されるウエハーを
支持する複数の第１の支持突起を立設した固定台を固定
し、上記固定台の上面側に、上記第１の支持突起を貫通
させて上下動操作される支持台を配設し、上記支持台の
上面側に、上動時に熱処理するウエハーを支持する複数
の第２の支持突起と、上記ウエハーの周縁部よりも若干
大径となる大きさに形成した水平な保持体とを取付ける
と共に、上記第２の支持突起がウエハーを支持したとき
の上記保持体の内周部とウエハーの周縁部との対向周面
を、該ウエハーの外周縁部に対して熱伝導される間隔に
近接したウエハー熱処理装置であることを特徴とする。According to the first aspect of the present invention,
The entrance and unloading port for loading and unloading the wafer on the lower side of the heating furnace to form, by arranging the base on the bottom of the oven, the concave housing portion on the upper surface central portion of the base platform A plurality of first support protrusions are formed and provided at the center of the bottom surface of the concave storage portion of the base to support wafers to be loaded / unloaded via the loading / unloading port on the top surface of the base body. The fixed base is fixed , and a support base that is vertically moved through the first support protrusion is disposed on the upper surface side of the fixed base, and heat treatment is performed on the upper surface side of the support base during the upward movement. A plurality of second support projections for supporting the wafer and a horizontal holder formed to have a diameter slightly larger than the peripheral edge of the wafer were attached, and the second support projection supported the wafer. When
The wafer heat treatment apparatus is characterized in that an opposing peripheral surface between the inner peripheral portion of the holder and the peripheral edge of the wafer is close to an interval where the heat is conducted to the outer peripheral edge of the wafer.
【０００８】請求項２記載の発明は、加熱炉の下部の側
部にウエハーを搬入・搬出する搬入口・搬出口を形成
し、上記加熱炉の下部に基台を配設して、該基台の上面
側中央部に凹状収納部を形成し、上記基台の凹状収納部
の底面中央部に、台本体の上面側に前記搬入口・搬出口
を介して搬入・搬出されるウエハーを支持する複数の第
１の支持突起を立設した固定台を固定し、上記固定台の
上面側に、上記第１の支持突起を貫通させて上下動操作
される支持台を配設し、上記支持台の上面側に、上記ウ
エハーの周縁部よりも若干大径となる大きさに形成した
水平な保持体を取付けると共に、上記保持体の内周部よ
りも内側に、上動時に熱処理するウエハーの下面側周縁
部と対向してこれを支持する複数の第３の支持突起を円
周方向に対して等間隔に隔てて形成し、上記第３の支持
突起がウエハーを支持したときの上記保持体の内周部と
ウエハーの周縁部との対向周面を、該ウエハーの外周縁
部に対して熱伝導される間隔に近接したウエハー熱処理
装置であることを特徴とする。[0008] The invention according to claim 2 is the lower side of the heating furnace.
The entrance and exit for loading and unloading wafers are formed
Then, a base is provided at a lower portion of the heating furnace, and an upper surface of the base is provided.
A concave storage part is formed in the center part on the side, and the concave storage part of the base is formed.
In the center of the bottom of the table, on the top side of the base body
Multiple wafers supporting wafers loaded and unloaded via
1. Fix the fixed base on which the support projections are erected, and fix the fixed base.
Vertical movement operation by penetrating the first support protrusion on the upper surface side
A support base is provided, and the upper surface of the support base is
Formed to be slightly larger in diameter than the periphery of eha
A plurality of third support projections are mounted in the circumferential direction on the lower side of the wafer to be heat-treated at the time of the upward movement while supporting the horizontal holder. Formed at equal intervals with respect to the third support
The inner periphery of the holder when the projections support the wafer
The peripheral surface facing the peripheral portion of the wafer is
The heat treatment apparatus is characterized in that it is a wafer heat treatment apparatus that is close to an interval where heat is conducted to a part .
【０００９】請求項３記載の発明は、上記請求項１又は
請求項２記載の構成と併せて、上記保持体の内周部に、
上記ウエハーの上面側周縁部よりも上方に突出され、該
ウエハーの上面側周縁部に対して熱伝導される間隔に近
接して第１の壁部を形成したウエハー熱処理装置である
ことを特徴とする。According to a third aspect of the present invention, in addition to the configuration of the first or second aspect, an inner peripheral portion of the holding body is provided.
A wafer heat treatment apparatus, wherein the first wall portion is formed to protrude above an upper peripheral portion of the wafer and to be close to an interval where heat is conducted to the upper peripheral portion of the wafer. I do.
【００１０】請求項４記載の発明は、上記請求項１，２
又は請求項３記載の構成と併せて、上記保持体の内周部
に、上記ウエハーの下面側周縁部に対向して円周方向に
形成され、該ウエハーの下面側周縁部に対して熱伝導さ
れる間隔に近接して第２の壁部を形成したウエハー熱処
理装置であることを特徴とする。[0010] The invention according to claim 4 is the first and second inventions.
Alternatively, in combination with the configuration according to claim 3, the holder is formed in a circumferential direction on an inner peripheral portion of the holding member so as to face a lower peripheral edge of the wafer, and conduct heat to the lower peripheral edge of the wafer. The wafer heat treatment apparatus is characterized in that the second wall portion is formed in the vicinity of the interval to be formed.
【００１１】請求項５記載の発明は、上記請求項１又は
２記載の構成と併せて、上記保持体を炭化ケイ素で構成
したウエハー熱処理装置であることを特徴とする。[0011] The invention described in claim 5 is the above-mentioned claim 1 or
A second aspect of the present invention is a wafer heat treatment apparatus in which the holder is made of silicon carbide.
【００１２】[0012]
【作用】請求項１記載のウエハー熱処理装置は、搬入口
から搬入されるウエハーを固定台の複数の第１の支持突
起により支持し、次いで支持台を上動操作して、搬入位
置にあるウエハーを保持体内に納めて支持台側の第２の
支持突起で支持して、熱処理位置に上昇し熱処理する。
所定の処理後のウエハーは支持台の下動により、支持台
の第２の支持突起から固定台の第１の支持突起に支持が
移される。そして搬出口から搬出する。このウエハーの
熱処理では、熱処理時に付与される熱を保持体に蓄熱
し、その保持体に蓄熱された熱を内周部から放射して、
その内周部に近接されたウエハーの周縁部に熱伝導する
ので、昇温初期時及び降温初期時に於いて、ウエハーの
中央部よりも周縁部の方が急速に加熱及び冷却されるの
を抑制でき、ウエハー全体の温度を均等に保ちながら加
熱及び冷却するため、ウエハー全体を均一に熱処理する
ことができる。また、保持体の材質や形状を選択し、ウ
エハーの材質や熱処理の目的に応じて最適な熱処理条件
を提供することができる。In the wafer heat treatment apparatus according to the first aspect, the wafer carried in from the carry-in entrance is supported by the plurality of first support projections of the fixed base, and then the support base is moved upward to move the wafer at the carry-in position. Is accommodated in the holding body, and is supported by the second support protrusion on the support base side, and is raised to the heat treatment position to perform heat treatment.
After the predetermined processing, the support is transferred from the second support projection of the support base to the first support projection of the fixed base by the downward movement of the support base. Then, it is carried out from the carry-out port. In the heat treatment of the wafer, the heat applied during the heat treatment is stored in the holder, and the heat stored in the holder is radiated from the inner periphery,
Since heat is conducted to the peripheral edge of the wafer close to the inner periphery, the peripheral portion is prevented from being heated and cooled more rapidly than the central portion of the wafer at the initial stage of temperature rise and temperature decrease. Since the heating and cooling are performed while maintaining the temperature of the entire wafer uniformly, the entire wafer can be uniformly heat-treated. Further, by selecting the material and shape of the holder, it is possible to provide optimal heat treatment conditions according to the material of the wafer and the purpose of the heat treatment.
【００１３】請求項２記載のウエハー熱処理装置は、熱
処理時に保持台の複数の第３の各支持突起によりウエハ
ーの下面側周縁部を支持するので、ウエハーの周縁部よ
りも内側に反りや熱膨張による摩擦が生じたり、結晶転
移が生じたりするのを確実に防止でき、歩留まりが向上
する。In the wafer heat treatment apparatus according to the second aspect, the lower peripheral edge of the wafer is supported by the plurality of third support projections of the holding table during the heat treatment, so that the wafer is warped inward and thermally expanded from the peripheral edge of the wafer. Therefore, it is possible to reliably prevent the occurrence of friction and crystal transition, thereby improving the yield.
【００１４】請求項３記載のウエハー熱処理装置は、上
記請求項１又は請求項２記載の作用と併せて、保持体に
蓄熱した熱を第１の壁部から放射して、その第１の壁部
に近接されたウエハーの上面側周縁部に熱伝導するの
で、ウエハーの上面側周縁部を中央部と同等温度に保つ
ことができ、ウエハーの上面側周縁部に結晶転移が生じ
るのを積極的に防止できる。[0014] wafer thermal processing apparatus according to claim 3, in conjunction with the operation of the first or second aspect, radiates heat accumulated in the holding member from the first wall, the first wall Since heat is conducted to the upper peripheral edge of the wafer close to the wafer, the upper peripheral edge of the wafer can be kept at the same temperature as the central part, and crystal transformation occurs at the upper peripheral edge of the wafer positively. Can be prevented.
【００１５】請求項４記載のウエハー熱処理装置は、上
記請求項１，２又は請求項３記載の作用と併せて、保持
体に蓄熱した熱を第２の壁部から放射して、その第２の
壁部に近接されたウエハーの下面側周縁部に熱伝導する
ので、ウエハーの下面側周縁部を中央部と同等温度に保
つことができ、ウエハーの下面側周縁部に結晶転移が生
じるのを積極的に防止できる。According to a fourth aspect of the present invention, in addition to the operation of the first, second or third aspect, the wafer heat treatment apparatus radiates the heat stored in the holding member from the second wall portion, and causes the second wall portion to emit the heat . since heat conduction to the lower surface side peripheral edge portion of the proximity to the wafer to <br/> wall of the lower side peripheral edge of the wafer can be kept in a central portion equivalent temperature, the crystal transition to the lower surface side peripheral edge portion of the wafer Can be positively prevented.
【００１６】請求項５記載のウエハー熱処理装置は、上
記請求項１または２記載の作用と併せて、保持体を炭化
ケイ素により構成することで、熱処理時に於いて、保持
体に蓄熱された熱がウエハーに効率よく熱伝導され、熱
損失が少なく、ウエハーの熱処理が効率よく行える。According to a fifth aspect of the present invention, in addition to the operation of the first or second aspect , the wafer heat treatment apparatus further comprises the holding body made of silicon carbide, so that the heat stored in the holding body during the heat treatment is reduced. The heat is efficiently conducted to the wafer, the heat loss is small, and the heat treatment of the wafer can be efficiently performed.
【００１７】[0017]
【発明の効果】この発明によれば、熱処理時に付与され
る熱を保持体に蓄熱して、その保持体に蓄熱された熱を
ウエハーの周縁部に熱伝導するので、昇温初期時及び降
温初期時に於いて、ウエハーの中央部よりも周縁部の方
が急速に加熱及び冷却されるのを抑制でき、均熱性を保
つことができる。且つ、ウエハー全体の温度を均等に保
ちながら加熱及び冷却するため、中央部と周縁部とに温
度勾配が生じるのを積極的に防止でき、ウエハー全体を
均一に熱処理して、酸化膜厚の均一性を保つことができ
る。また、保持体の材質や形状を選択し、ウエハーの材
質や熱処理の目的に応じて最適な熱処理条件を提供する
ことができる。According to the present invention, the heat applied during the heat treatment is stored in the holder, and the heat stored in the holder is transferred to the peripheral portion of the wafer. At the initial stage, the peripheral portion can be more rapidly prevented from being heated and cooled than the central portion of the wafer, and the uniform temperature can be maintained. In addition, since heating and cooling are performed while maintaining the temperature of the entire wafer evenly, it is possible to positively prevent a temperature gradient from being generated between the central portion and the peripheral portion, and to uniformly heat-treat the entire wafer, thereby obtaining a uniform oxide film thickness. Sex can be maintained. Further, by selecting the material and shape of the holder, it is possible to provide optimal heat treatment conditions according to the material of the wafer and the purpose of the heat treatment.
【００１８】しかも、ウエハーの下面側周縁部を複数の
第２あるいは第３の各支持突起により点支持した状態の
まま熱処理するので、ウエハーの周縁部よりも内側に反
りや熱膨張による摩擦が生じたり、結晶転移が生じたり
するのを確実に防止できる。従来例のような保持体１
３，１４よりも結晶転移の生じる部分及び面積が少な
く、歩留まりが良くなるため、一枚のウエハーから得ら
れる半導体の個数が増加し、製造コストの低減を図るこ
とができると共に、結晶転移の生じる要因及び部分が削
減され、品質の向上及び安定を図ることができる。Further, the peripheral portion on the lower surface side of the wafer is
Since the heat treatment is performed while being point-supported by the second or third support projections, it is possible to reliably prevent friction due to warpage or thermal expansion inside the peripheral portion of the wafer or crystal transition. . Holder 1 as in conventional example
Since the portion and area where crystal transition occurs are smaller than those in Nos. 3 and 14, and the yield is improved, the number of semiconductors obtained from one wafer is increased, the manufacturing cost can be reduced, and crystal transition occurs. Factors and parts are reduced, and quality can be improved and stabilized.
【００１９】さらに、保持体に蓄熱された熱を第１の壁
部及び第２の壁部から放射してウエハーの上下周縁部に
熱伝導するので、熱伝導される範囲が広くなり、周縁部
全体を同等温度に保つことができる。且つ、第２あるい
は第３の各支持突起により支持した周囲部分にも効率よ
く熱伝導されるため、その点接触する部分のみに小さな
結晶転移が生じるが、従来例の保持体１３よりも結晶転
移の生じる部分及び面積を最小限に抑制することができ
る。且つ、炭化ケイ素は蓄熱性及び熱伝導性が良く、保
持体に蓄熱された熱がウエハーに対して効率よく熱伝導
されるため、熱損失が少なく、ウエハーの熱処理が効率
よく行える。Further, since the heat stored in the holder is radiated from the first wall portion and the second wall portion and is conducted to the upper and lower peripheral edges of the wafer, the range of heat conduction is increased, and the peripheral edge portion is increased. The whole can be kept at the same temperature. And the second or
Is efficiently conducted also to the peripheral portion supported by each of the third supporting projections, so that a small crystal transition occurs only in the point contacting portion. The area can be minimized. In addition, silicon carbide has good heat storage properties and heat conductivity, and the heat stored in the holder is efficiently conducted to the wafer, so that heat loss is small and heat treatment of the wafer can be performed efficiently.
【００２０】[0020]
【実施例】図面は第１実施例の保持体を備えた急速加熱
型のウエハー熱処理装置を示し、図１に於いて、このウ
エハー熱処理装置１は、加熱炉２の一側部に搬入口２ａ
を形成し、他側部に搬出口２ｂを形成して、搬入側及び
搬出側に配設したロボットアームＢにより未熱処理のウ
エハーＡを炉内部に搬入し、熱処理済みのウエハーＡを
炉外部に搬出する。1 shows a rapid heating type wafer heat treatment apparatus provided with a holder according to a first embodiment. In FIG. 1, this wafer heat treatment apparatus 1 has a loading port 2a at one side of a heating furnace 2.
Is formed on the other side, and an unheated wafer A is loaded into the furnace by the robot arms B disposed on the loading side and the unloading side, and the heat-treated wafer A is placed outside the furnace. Take it out.
【００２１】加熱炉２の内部は、例えば、石英（ＳｉＯ
２）、炭化ケイ素（ＳｉＣ）等の耐熱性の高い壁部材３
で囲繞されると共に、その壁部材３の外側にはヒータ素
線４ａを有する加熱ヒータ４が配設され、その加熱ヒー
タ４の外側は断熱材５で囲繞されている。加熱炉２の下
部には、同炉下部に配設した基台６の上面側中央部に凹
状収納部６ａを形成し、その凹状収納部６ａの底面中央
部にウエハーＡを載置するための固定台７を固定し、そ
の上段にウエハーＡを上下方向に昇降するための保持体
８を配設している。The interior of the heating furnace 2 is made of, for example, quartz (SiO
2 ) Wall member 3 having high heat resistance such as silicon carbide (SiC)
A heater 4 having a heater wire 4 a is disposed outside the wall member 3, and the outside of the heater 4 is surrounded by a heat insulating material 5. At the lower part of the heating furnace 2, a concave storage part 6a is formed at the center of the upper surface side of the base 6 disposed at the lower part of the furnace, and the wafer A is mounted on the central part of the bottom of the concave storage part 6a. A fixing table 7 is fixed, and a holder 8 for vertically moving the wafer A up and down is disposed on the upper stage.
【００２２】上述した固定台７は、上述した凹状収納部
６ａの底面中央部に、円盤形状に形成した台本体７ａの
下面中央部を固定して、凹状収納部６ａの底面中央部に
形成した摺動孔６ｂと、台本体７ａの下面中央部に形成
した摺動孔７ｂとを上下方向に連通すると共に、各孔６
ｂ，７ｂを、後述する昇降体１０の上下摺動が許容され
る孔径に形成している。台本体７ａの上面側には、ウエ
ハーＡの下面側中央部と対向する位置であって、上述し
た摺動孔７ｂを中心として、先細形状に形成した複数本
（例えば、３本）の各支持突起７ｃ…を円周方向に対し
て等間隔に隔てて立設すると共に、各支持突起７ｃ…を
後述する保持体８の内周縁部よりも内側に配列してい
る。The above-mentioned fixed base 7 is formed at the center of the bottom of the concave storage part 6a by fixing the center of the bottom of the base body 7a formed in a disk shape to the center of the bottom of the concave storage part 6a. The sliding hole 6b and the sliding hole 7b formed in the center of the lower surface of the base body 7a communicate vertically with each other.
The holes b and 7b are formed to have a hole diameter that allows vertical movement of the elevating body 10 described later. On the upper surface of the base body 7a, a plurality of (for example, three) tapered support members are formed at a position facing the center of the lower surface side of the wafer A and formed in a tapered shape with the above-described sliding hole 7b as a center. The projections 7c are erected at equal intervals in the circumferential direction, and the support projections 7c are arranged inside an inner peripheral edge of a holding body 8 described later.
【００２３】前述した保持体８は、図２、図３に示すよ
うに、蓄熱性及び熱伝導性が良く、耐熱性の高い炭化ケ
イ素（ＳｉＣ）により部材本体８ａを形成し、或いは、
その部材本体８ａの表面をコーティング処理（ＳｉＣ−
ＣＶＤコート）して構成される。部材本体８ａは、所定
サイズにカットされたウエハーＡの周縁部Ａａよりも若
干大径となるリング形状に形成され、その部材本体８ａ
の内周側壁部８ｄを、後述する支持台９の各支持突起９
ｅ…により支持されるウエハーＡの周縁部Ａａに対して
均等間隔ａ（例えば、約３mm以下）に対向される内径寸
法に形成している。且つ、壁部８ｄを、後述する各支持
突起９ｅ…により支持されるウエハーＡの周縁部Ａａよ
りも若干上面側に突出される高さｂに形成すると共に、
その下面側周縁部に、後述する支持台９の各支持軸９ｂ
…と対向して複数の各孔部８ｂ…を形成している。As shown in FIGS. 2 and 3, the holding member 8 has a member main body 8a made of silicon carbide (SiC) having good heat storage and heat conductivity and high heat resistance.
The surface of the member body 8a is coated (SiC-
CVD coating). The member main body 8a is formed in a ring shape having a slightly larger diameter than the peripheral portion Aa of the wafer A cut into a predetermined size.
The inner peripheral side wall portion 8d of each support protrusion 9
The inner diameter of the wafer A is set to be equal to the peripheral edge Aa of the wafer A supported by e. Further, the wall portion 8d is formed at a height b slightly protruding to the upper surface side from the peripheral edge portion Aa of the wafer A supported by the support projections 9e described later.
Each support shaft 9b of the support 9 described later is provided on the lower peripheral edge.
Are formed in opposition to each other.
【００２４】上述した支持台９は、円盤形状に形成した
台本体９ａの上面側周縁部に、上述した保持体８の各孔
部８ｂ…と対向して複数本（例えば、３本、４本）の各
支持軸９ｂ…を円周方向に対して等間隔に隔てて立設す
ると共に、各支持軸９ｂ…の上端部を保持体８の各孔部
８ｂ…に対して下方から差込み、支持軸９ｂの先端部に
形成された段部９ｆを孔部８ｂの外周縁部に係合して、
各支持軸９ｂ…により保持体８を水平状態且つ交換可能
に支持している。且つ、台本体９ａの上面側には、上述
した固定台７の各支持突起７ｃ…と対向して各孔部９ｃ
…が形成され、各孔部９ｃ…は、各支持突起７ｃ…の出
没動作が許容される孔径に形成している。台本体９ａの
上面側周縁部には、各支持軸９ｂ…よりも内側であっ
て、上述した各支持突起７ｃ…により支持されるウエハ
ーＡの下面側周縁部Ａａと対向して、先細形状に形成し
た複数本（例えば、３本、４本）の各支持突起９ｅ…を
円周方向に対して等間隔に隔てて突設すると共に、各支
持突起９ｅ…を上述した保持体８の内周縁部よりも内側
に配列している。図８は保持体８の他の支持構造を示
し、保持体８の軸方向下部内周側に段部８ｃを形成し、
その段部８ｃを台本体９ａの外周縁部に載置して水平状
態且つ交換可能に支持している。A plurality of (for example, three or four) support bases 9 are provided on the peripheral edge of the upper surface of the base body 9a formed in a disk shape so as to face the holes 8b. ) Are erected at equal intervals in the circumferential direction, and the upper ends of the support shafts 9b are inserted into the holes 8b of the holder 8 from below to support them. The step 9f formed at the tip of the shaft 9b is engaged with the outer peripheral edge of the hole 8b,
The holding body 8 is supported horizontally and exchangeably by the support shafts 9b. In addition, on the upper surface side of the base body 9a, each hole 9c is opposed to each support protrusion 7c.
Are formed, and each of the holes 9c is formed to have a hole diameter that allows the support protrusions 7c to move in and out. The upper peripheral portion of the upper surface of the base body 9a is formed in a tapered shape by being opposed to the lower peripheral portion Aa of the wafer A, which is inside the support shafts 9b and supported by the support protrusions 7c described above. A plurality (for example, three, four) of the formed support projections 9e are projected at equal intervals in the circumferential direction, and the respective support projections 9e are formed on the inner peripheral edge of the holding body 8 described above. It is arranged inside the part. FIG. 8 shows another supporting structure of the holding body 8, in which a step 8 c is formed on the inner peripheral side of the holding body 8 in the lower part in the axial direction.
The step 8c is placed on the outer peripheral edge of the base body 9a and supported horizontally and exchangeably.
【００２５】且つ、台本体９ａの下面中央部に、筒状に
形成した昇降体１０の上端部を固定して、台本体９ａの
下面中央部に形成した孔部９ｄと昇降体１０とを連通す
ると共に、昇降体１０の下端側を、基台６及び固定台７
に形成した各孔６ｂ，７ｂに対して上下摺動可能に挿入
し、例えば、サーボモータ、エアシリンダ等の昇降手段
（図示省略）により昇降体１０を鉛直方向に上下摺動さ
せて、固定台７の各支持突起７ｃ…が保持体８よりも上
方に突出される降下位置と、保持体８により支持された
ウエハーＡが加熱炉２の中心部により持上げられる上昇
位置とに支持台９を上下動する。なお、昇降体１０は、
例えば、窒素ガス（Ｎ２）等のプロセスガスをパージす
るためのガス供給装置（図示省略）に接続され、加熱炉
２の搬出側又は搬入側には、降下位置に昇降停止された
ウエハーＡに向けて冷却ガスを吐出するための噴射ノズ
ル１１を配設している。The upper end of a cylindrical elevating body 10 is fixed to the center of the lower surface of the base body 9a, and the hole 9d formed in the center of the lower surface of the base body 9a communicates with the elevating body 10. At the same time, the lower end of the elevating body 10 is
Are vertically slidably inserted into the holes 6b and 7b formed in the base, and the elevating body 10 is vertically slid vertically by means of elevating means (not shown) such as a servomotor, an air cylinder, or the like. The support table 9 is moved up and down between a lowering position where each of the support projections 7c... Protrudes above the holder 8 and a rising position where the wafer A supported by the holder 8 is lifted by the center of the heating furnace 2. Move. In addition, the lifting body 10
For example, it is connected to a gas supply device (not shown) for purging a process gas such as a nitrogen gas (N 2 ). An injection nozzle 11 for discharging the cooling gas toward the nozzle is provided.
【００２６】図示実施例は上記の如く構成するものにし
て、以下、ウエハー熱処理装置１によりウエハーＡを熱
処理するときの動作を説明する。先ず、熱処理開始時に
於いて、図１に示すように、ロボットアームＢにより保
持した未熱処理のウエハーＡを加熱炉２内部に搬入し、
加熱炉２に設置された固定台７の各支持突起７ｃ…上に
ウエハーＡを水平に載置する。加熱炉２外部にロボット
アームＢを引出した後、支持台９を垂直上昇させて、固
定台７の各支持突起７ｃ…により支持されたウエハーＡ
の周縁部Ａａを支持台９の各支持突起９ｅ…により水平
に支持すると共に、保持体８の壁部８ｄをウエハーＡの
周縁部Ａａに対して均等間隔に近接して所定高さに持上
げる。同時に、筒状の昇降体１０から吐出されるプロセ
スガスを加熱炉２内部にパージして、熱処理に応じたガ
ス環境を形成した後、ウエハーＡの周縁部Ａａを支持台
９の各支持突起９ｅ…で水平に支持した状態のまま加熱
ヒータ４により熱処理する。The illustrated embodiment is configured as described above, and the operation when the wafer A is heat-treated by the wafer heat treatment apparatus 1 will be described below. First, at the start of the heat treatment, the unheated wafer A held by the robot arm B is loaded into the heating furnace 2 as shown in FIG.
The wafer A is placed horizontally on each of the support projections 7c... Of the fixing table 7 installed in the heating furnace 2. After the robot arm B is drawn out of the heating furnace 2, the support table 9 is vertically moved upward, and the wafers A supported by the respective support protrusions 7 c of the fixed table 7.
Is horizontally supported by the respective support protrusions 9e of the support base 9, and the wall 8d of the holder 8 is lifted to a predetermined height in close proximity to the peripheral edge Aa of the wafer A at an equal interval. . At the same time, the process gas discharged from the cylindrical elevating body 10 is purged into the heating furnace 2 to form a gas environment corresponding to the heat treatment. Heat treatment is performed by the heater 4 while being horizontally supported by.
【００２７】この時、加熱ヒータ４により付与される熱
を保持体８に蓄熱し、その保持体８に蓄熱された熱を壁
部８ｄから放射して、壁部８ｄに近接されたウエハーＡ
の周縁部Ａａに熱伝導するので、昇温初期時に於いて、
ウエハーＡの中央部よりも周縁部Ａａの方が急速に加熱
されるのを抑制でき、ウエハーＡ全体の温度を均等に保
ちながら加熱するため、温度勾配が生じるのを積極的に
防止でき、ウエハーＡ全体を均一に熱処理することがで
きる。At this time, the heat given by the heater 4 is stored in the holder 8, the heat stored in the holder 8 is radiated from the wall 8d, and the wafer A close to the wall 8d.
Since heat is conducted to the peripheral portion Aa of
The peripheral portion Aa can be more rapidly prevented from being heated than the central portion of the wafer A, and the peripheral portion Aa can be heated while maintaining the temperature of the entire wafer A uniformly. A can be uniformly heat-treated.
【００２８】次に、支持台９を垂直降下させるとき、保
持体８に蓄熱された熱を壁部８ｄから放射して、壁部８
ｄに近接されたウエハーＡの周縁部Ａａに熱伝導するの
で、降温初期時に於いて、ウエハーＡの中央部よりも周
縁部Ａａの方が急速に冷却されるのを抑制でき、ウエハ
ーＡ全体の温度を均等に保ちながら冷却するため、温度
勾配が生じるのを積極的に防止できる。支持台９の各支
持突起９ｅ…により支持されたウエハーＡを固定台７の
各支持突起７ｃ…に再び載置し、固定台７の各支持突起
７ｃ…よりも下方に保持体８を降下させた後、加熱炉２
内部にロボットアームＢを挿入して、固定台７の各支持
突起７ｃ…により支持された熱処理済みのウエハーＡを
ロボットアームＢにより保持し、その保持されたウエハ
ーＡを搬出するとき噴射ノズル１１から吐出される冷却
ガスを吹き付けて冷却処理し、加熱炉２外部にロボット
アームＢを引出して熱処理済みのウエハーＡを次の処理
工程に移送する。Next, when the support 9 is lowered vertically, the heat stored in the holding body 8 is radiated from the wall 8d, and the wall 8d is radiated.
Since heat is conducted to the peripheral portion Aa of the wafer A close to the position d, the peripheral portion Aa can be suppressed from being cooled more rapidly than the central portion of the wafer A at the initial temperature drop, and the entire wafer A can be suppressed. Since cooling is performed while maintaining the temperature uniformly, it is possible to positively prevent a temperature gradient from occurring. The wafer A supported by the respective support protrusions 9e of the support table 9 is placed again on the respective support protrusions 7c of the fixed table 7, and the holder 8 is lowered below the respective support protrusions 7c of the fixed table 7. After heating furnace 2
The robot arm B is inserted therein, and the heat-treated wafer A supported by the support protrusions 7c of the fixing table 7 is held by the robot arm B. When the held wafer A is unloaded, the ejection nozzle 11 The cooling process is performed by spraying the discharged cooling gas, and the robot arm B is pulled out of the heating furnace 2 to transfer the heat-treated wafer A to the next processing step.
【００２９】上述のように、保持体８に蓄熱された熱を
壁部８ｄから放射してウエハーＡの周縁部Ａａに熱伝導
するので、昇温初期時及び降温初期時に於いて、ウエハ
ーＡの中央部よりも周縁部Ａａの方が急速に加熱及び冷
却されるのを抑制でき、均熱性を保つことができる。且
つ、ウエハーＡ全体の温度を均等に保ちながら加熱及び
冷却するため、中央部と周縁部Ａａとに温度勾配が生じ
るのを積極的に防止でき、ウエハーＡ全体を均一に熱処
理して酸化膜厚の均一性を保つことができる。また、保
持体８の材質や形状を選択し、ウエハーＡの材質や熱処
理の目的に応じて最適な熱処理条件を提供することがで
きる。As described above, the heat stored in the holder 8 is radiated from the wall 8d and is conducted to the peripheral portion Aa of the wafer A. The peripheral portion Aa can be more rapidly prevented from being heated and cooled than the central portion, and the uniform temperature can be maintained. Further, since heating and cooling are performed while maintaining the temperature of the entire wafer A uniformly, it is possible to positively prevent a temperature gradient from being generated between the central portion and the peripheral portion Aa. Uniformity can be maintained. Further, it is possible to select the material and the shape of the holding member 8 and to provide optimal heat treatment conditions according to the material of the wafer A and the purpose of the heat treatment.
【００３０】しかも、支持台９に形成した各支持突起９
ｅ…によりウエハーＡの周縁部Ａａを点支持した状態の
まま熱処理するので、相互の接触箇所及び接触面積が少
なく、結晶転移の生じる要因及び部分が削減されると共
に、品質の向上及び安定を図ることができる。従来例と
同一条件で熱処理済みのウエハーＡを試験して、その結
晶転移の発生状況を観察した結果、図７に示すように、
ウエハーＡの周縁部Ａａ（例えば、約５mmの範囲）より
も内側に結晶転移が生じることがなく、従来例の保持体
１３，１４よりも結晶転移の生じる部分が少なくなるた
め、歩留まりが良くなり、１枚のウエハーＡから得られ
る半導体の個数が増加し、製造コストの低減を図ること
ができる。且つ、炭化ケイ素は蓄熱性及び伝導性が良
く、熱処理時に於いて、保持体８に蓄熱された熱がウエ
ハーＡに対して効率よく熱伝導されるため、熱損失が少
なく、ウエハーＡの熱処理が効率よく行える。In addition, each support projection 9 formed on the support base 9
e, heat treatment is performed while the peripheral portion Aa of the wafer A is point-supported, so that there are few contact points and contact areas with each other, so that factors and portions causing crystal transition are reduced, and quality is improved and stability is improved. be able to. As a result of examining the state of occurrence of the crystal transition by testing the heat-treated wafer A under the same conditions as the conventional example, as shown in FIG.
Crystal transition does not occur inside the peripheral portion Aa (for example, in a range of about 5 mm) of the wafer A, and the portion where crystal transition occurs is smaller than that of the conventional holders 13 and 14, so that the yield is improved. (1) The number of semiconductors obtained from one wafer A increases, and the manufacturing cost can be reduced. In addition, silicon carbide has good heat storage properties and conductivity, and during heat treatment, heat stored in the holder 8 is efficiently conducted to the wafer A, so that heat loss is small, and heat treatment of the wafer A can be performed. It can be done efficiently.
【００３１】図４は第２実施例の保持体１２を備えたウ
エハー熱処理装置１を示し、第１実施例の装置と同一構
成の部分は同一の符号を記してその詳細な説明を省略す
る。同装置に備えられた保持体１２は、上述した第１実
施例の保持体８と同一材質で部材本体１２ａを形成し、
或いは、部材本体１２ａをコーティング処理して構成さ
れる。FIG. 4 shows a wafer heat treatment apparatus 1 provided with a holder 12 of the second embodiment, and the same components as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. The holding body 12 provided in the apparatus has a member main body 12a formed of the same material as the holding body 8 of the first embodiment described above,
Alternatively, the member main body 12a is formed by coating.
【００３２】上述した部材本体１２ａは、図５、図６に
示すように、ウエハーＡの周縁部Ａａが水平に支持され
るリング形状に形成され、その部材本体１２ａの内周縁
部には、固定台７の各支持突起７ｃ…により支持される
ウエハーＡの下面側周縁部Ａａと対向して支持壁部１２
ｂを円周方向に連続して形成し、その支持壁部１２ｂの
内周縁部と外周縁部との間を、ウエハーＡの周縁部Ａａ
が水平に支持される間隔ｃ（例えば、約１０mm以下）に
形成している。As shown in FIGS. 5 and 6, the above-mentioned member main body 12a is formed in a ring shape in which the peripheral edge Aa of the wafer A is horizontally supported, and is fixed to the inner peripheral edge of the member main body 12a. The supporting wall portion 12 faces the lower peripheral edge Aa of the wafer A supported by the supporting projections 7c.
b is continuously formed in the circumferential direction, and the peripheral portion Aa of the wafer A is formed between the inner peripheral edge and the outer peripheral edge of the support wall portion 12b.
Are formed at an interval c (for example, about 10 mm or less) supported horizontally.
【００３３】且つ、支持壁部１２ｂの上面側には、ウエ
ハーＡの下面側周縁部Ａａと対向して、例えば、円錐形
状、半球形状等の点接触される形状に形成した各支持突
起１２ｃ…を円周方向に対して等間隔に隔てて複数箇所
（例えば、３箇所、４箇所）突設すると共に、各支持突
起１２ｃ…を、ウエハーＡと支持壁部１２ｂとの対向面
間が均等に対向される高さｄ（例えば、約１mm以下）に
形成している。On the upper surface side of the support wall portion 12b, opposed to the lower peripheral edge portion Aa of the wafer A, each support protrusion 12c formed in a point-contact shape such as a conical shape or a hemispherical shape. Are projected at equal intervals in the circumferential direction (for example, three places and four places), and the respective support protrusions 12c are equally spaced between the opposing surfaces of the wafer A and the support wall portion 12b. It is formed to have a height d (for example, about 1 mm or less) opposed thereto.
【００３４】且つ、支持壁部１２ｂの外周縁部には、各
支持突起１２ｃ…により支持されるウエハーＡの周縁部
Ａａと対向して壁部１２ｄを円周方向に連続して形成す
ると共に、その壁部１２ｄの内周面を、ウエハーＡの周
縁部Ａａに対して均等間隔ａ（例えば、約３mm以下）に
対向される内径寸法に形成し、壁部１２ｄを、各支持突
起１２ｃ…により支持されるウエハーＡの周縁部Ａａよ
りも若干上面側に突出される高さｂに形成している。部
材本体１２ａの下面側周縁部に形成した各孔部１２ｅ…
には、上述した支持台９の各支持軸９ｂ…を差込み、支
持軸９ｂの先端部に形成された段部９ｆを孔部１２ｅの
外周縁部に係合して、保持体１２を水平状態且つ交換可
能に支持している。At the outer peripheral edge of the support wall portion 12b, a wall portion 12d is formed continuously in the circumferential direction so as to face the peripheral edge portion Aa of the wafer A supported by the support protrusions 12c. The inner peripheral surface of the wall portion 12d is formed to have an inner diameter that is opposed to the peripheral portion Aa of the wafer A at an equal interval a (for example, about 3 mm or less), and the wall portion 12d is formed by the respective support protrusions 12c. The wafer A is formed at a height b slightly protruding from the peripheral portion Aa of the wafer A to the upper surface side. Each hole 12e formed in the lower peripheral edge of the member body 12a.
The support shafts 9b of the support base 9 described above are inserted, and the step 9f formed at the distal end of the support shaft 9b is engaged with the outer peripheral edge of the hole 12e to bring the holder 12 into a horizontal state. In addition, they are exchangeably supported.
【００３５】熱処理開始時に於いて、ロボットアームＢ
により保持した未熱処理のウエハーＡを、加熱炉２内部
に搬入して固定台７の各支持突起７ｃ…上に載置した
後、支持台９を垂直上昇させて、固定台７の各支持突起
７ｃ…により支持されたウエハーＡの周縁部Ａａを保持
体１２の各支持突起１２ｃ…により水平に支持して所定
高さに持上げる。熱処理時に於いて、加熱ヒータ４によ
り付与される熱を保持体８に蓄熱し、その保持体８に蓄
熱された熱を支持壁部１２ｂ及び壁部８ｄから放射して
ウエハーＡの上下周縁部Ａａに熱伝導するので、昇温初
期時に於いて、ウエハーＡの中央部よりも周縁部Ａａの
方が急速に加熱されるのを抑制でき、ウエハーＡ全体の
温度を均等に保ちながら加熱して、ウエハーＡ全体を均
一に熱処理する。且つ、ウエハーＡと支持壁部１２ｂと
の間隔が狭く、保持体１２に蓄熱された熱が各支持突起
１２ｃ…により支持された部分にも効率よく熱伝導され
るため、各支持突起１２ｃ…で支持した周囲部分も同等
温度に熱処理できる。At the start of the heat treatment, the robot arm B
The unheated wafer A held by the above is carried into the heating furnace 2 and placed on the support projections 7c... Of the fixed base 7, and then the support base 9 is vertically moved upward, and the support projections of the fixed base 7 are moved. 7c are supported horizontally by the respective support protrusions 12c of the holder 12 and lifted to a predetermined height. At the time of the heat treatment, the heat given by the heater 4 is stored in the holder 8, and the heat stored in the holder 8 is radiated from the support wall 12b and the wall 8d to irradiate the upper and lower peripheral portions Aa of the wafer A. In the initial stage of temperature rise, the peripheral portion Aa can be suppressed from being heated more rapidly than the central portion of the wafer A, and the wafer A is heated while maintaining the entire temperature uniformly. The entire wafer A is heat-treated uniformly. In addition, the distance between the wafer A and the support wall 12b is small, and the heat stored in the holder 12 is efficiently conducted to the portion supported by the support projections 12c. The supporting peripheral portion can be heat-treated to the same temperature.
【００３６】次に、支持台９を垂直降下させるとき、保
持体１２に蓄熱された熱を支持壁部１２ｂ及び壁部１２
ｄから放射してウエハーＡの上下周縁部Ａａに熱伝導す
るので、降温初期時に於いて、ウエハーＡの中央部より
も周縁部Ａａの方が急速に冷却されるのを抑制でき、ウ
エハーＡ全体の温度を均等に保ちながら冷却するため、
温度勾配が生じるのを積極的に防止できる。保持体１２
の各支持突起１２ｃ…により支持されたウエハーＡを固
定台７の各支持突起７ｃ…に再び載置した後、熱処理済
みのウエハーＡをロボットアームＢにより保持して加熱
炉２外部に搬出し、その保持されたウエハーＡに噴射ノ
ズル１１から吐出される冷却ガスを吹き付けて冷却処理
するので、第１実施例と同様にウエハーＡを熱処理する
ことができる。Next, when the support 9 is vertically lowered, the heat stored in the holder 12 is transferred to the support wall 12b and the wall 12b.
d, heat is conducted to the upper and lower peripheral portions Aa of the wafer A, so that the peripheral portion Aa can be suppressed from being cooled more rapidly than the central portion of the wafer A at the initial temperature drop, and the entire wafer A can be suppressed. To cool while keeping the temperature of the
A temperature gradient can be positively prevented from occurring. Holder 12
After the wafers A supported by the respective support protrusions 12c are again mounted on the respective support protrusions 7c of the fixing table 7, the heat-treated wafer A is held by the robot arm B and unloaded to the outside of the heating furnace 2. Since the cooling process is performed by blowing the cooling gas discharged from the injection nozzle 11 onto the held wafer A, the wafer A can be heat-treated as in the first embodiment.
【００３７】つまり、保持体１２に蓄熱された熱を支持
壁部１２ｂ及び壁部１２ｄから放射してウエハーＡの上
下周縁部Ａａに熱伝導するので、第１実施例の保持体８
よりも熱伝導される範囲が広くなり、周縁部Ａａ全体を
同等温度に保つことができる。昇温初期時及び降温初期
時に於いて、ウエハーＡの中央部よりも周縁部Ａａの方
が急速に加熱及び冷却されるのを抑制でき、均熱性を保
つことができる。且つ、ウエハーＡ全体の温度を均等に
保ちながら加熱及び冷却するため、ウエハーＡ全体を均
一に熱処理して、酸化膜厚の均一性を保つことができ
る。また、保持体１２の材質や形状を選択し、ウエハー
Ａの材質や熱処理の目的に応じて最適な熱処理条件を提
供することができる。That is, since the heat stored in the holder 12 is radiated from the support wall 12b and the wall 12d and is conducted to the upper and lower peripheral edges Aa of the wafer A, the holder 8 of the first embodiment is used.
The range of heat conduction is wider than that, and the entire peripheral portion Aa can be kept at the same temperature. In the initial stage of the temperature rise and the initial stage of the temperature decrease, the peripheral portion Aa can be suppressed from being heated and cooled more rapidly than the central portion of the wafer A, and the uniform temperature can be maintained. In addition, since heating and cooling are performed while maintaining the temperature of the entire wafer A uniformly, the entire wafer A can be uniformly heat-treated, and the uniformity of the oxide film thickness can be maintained. Further, by selecting the material and the shape of the holding body 12, it is possible to provide optimal heat treatment conditions according to the material of the wafer A and the purpose of the heat treatment.
【００３８】しかも、保持体１２の各支持突起１２ｃ…
によりウエハーＡの周縁部Ａａを点支持した状態のまま
熱処理するので、ウエハーＡの周縁部Ａａ（例えば、約
５mmの範囲）よりも内側に結晶転移が生じることがな
く、第１実施例と同様に、歩留まりが良くなり、１枚の
ウエハーＡから得られる半導体の個数が増加し、製造コ
ストの低減を図ることができる。且つ、ウエハーＡと支
持壁部１２ｂとの対向面を近接（例えば、約１mm以下）
しているので、保持体１２に蓄熱された熱が各支持突起
１２ｃ…により支持された周囲部分にも効率よく熱伝導
されるため、各支持突起１２ｃ…で支持された点接触部
分のみに小さな結晶転移（例えば、約２mm以下の大き
さ）が生じるが、従来例の保持体１３よりも結晶転移が
小さく、結晶転移の生じる部分及び面積を最小限に抑制
することができる。Moreover, each of the support projections 12c of the holding body 12 is provided.
As a result, the heat treatment is performed while the peripheral portion Aa of the wafer A is point-supported, so that no crystal transition occurs inside the peripheral portion Aa of the wafer A (for example, within a range of about 5 mm), similar to the first embodiment. In addition, the yield is improved, the number of semiconductors obtained from one wafer A is increased, and the manufacturing cost can be reduced. In addition, the opposing surfaces of the wafer A and the support wall 12b are close to each other (for example, about 1 mm or less).
, The heat stored in the holding body 12 is efficiently conducted to the peripheral portions supported by the respective support protrusions 12c, so that only the point contact portions supported by the respective support protrusions 12c are small. Although a crystal transition (for example, a size of about 2 mm or less) occurs, the crystal transition is smaller than that of the holder 13 of the conventional example, and the portion and area where the crystal transition occurs can be suppressed to a minimum.
【００３９】この発明の構成と、上述の実施例との対応
において、この発明の保持体の内周部は、第１実施例の
保持体８を構成する壁部８ｄ、第２実施例の保持体１２
を構成する壁部１２ｄに対応するも、この発明は、上述
の実施例の構成のみに限定されるものではなく、例え
ば、石英（ＳｉＯ２）、炭化ケイ素（ＳｉＣ）等の耐熱
性の高い材質で固定台７及び支持台９を形成してもよ
い。In the correspondence between the structure of the present invention and the above-described embodiment, the inner peripheral portion of the holder of the present invention includes a wall 8d constituting the holder 8 of the first embodiment, and the holding member of the second embodiment. Body 12
However, the present invention is not limited to the configuration of the above-described embodiment, but may be a material having high heat resistance such as quartz (SiO 2 ) and silicon carbide (SiC). May form the fixed base 7 and the support base 9.
【図１】 第１実施例の保持体を備えたウエハー熱処理
装置を示す断面図。FIG. 1 is a sectional view showing a wafer heat treatment apparatus provided with a holder according to a first embodiment.
【図２】 保持体によるウエハーの支持部分を示す断面
図。FIG. 2 is a cross-sectional view showing a supporting portion of a wafer by a holder.
【図３】 保持体によるウエハーの支持状態を示す平面
図。FIG. 3 is a plan view showing a state in which a wafer is supported by a holder.
【図４】 第２実施例の保持体を備えたウエハー熱処理
装置を示す断面図。FIG. 4 is a cross-sectional view illustrating a wafer heat treatment apparatus including a holder according to a second embodiment.
【図５】 保持体によるウエハーの支持部分を示す断面
図。FIG. 5 is a sectional view showing a supporting portion of the wafer by a holder.
【図６】 保持体によるウエハーの支持状態を示す平面
図。FIG. 6 is a plan view showing a state in which a wafer is supported by a holder.
【図７】 ウエハーに生じた結晶転移の観察結果を示す
平面図。FIG. 7 is a plan view showing an observation result of a crystal transition generated on a wafer.
【図８】 保持体の他の支持構造を示す断面図。FIG. 8 is a sectional view showing another supporting structure of the holding body.
【図９】 第１従来例の保持体によるウエハーの支持状
態を示す側面図。FIG. 9 is a side view showing a state in which a wafer is supported by a holder of the first conventional example.
【図１０】 第２従来例の保持体によるウエハーの支持
状態を示す側面図。FIG. 10 is a side view showing a state in which a wafer is supported by a holder according to a second conventional example.
【図１１】 ウエハーに生じた結晶転移の観察結果を示
す平面図。FIG. 11 is a plan view showing an observation result of a crystal transition generated on a wafer.
Ａ…ウエハー Ａａ…周縁部 １…ウエハー熱処理装置 ２…加熱炉 ７…固定台 ７ｃ…支持突起 ８…保持体 ８ｄ…壁部 ９…支持台 ９ｅ…支持突起 １２…保持体 １２ｂ…支持壁部 １２ｃ…支持突起 １２ｄ…壁部 A: Wafer Aa: Peripheral edge 1: Wafer heat treatment apparatus 2: Heating furnace 7: Fixing table 7c: Support projection 8: Holder 8d: Wall section 9: Support table 9e: Support projection 12: Holder 12b: Support wall section 12c ... Support projections 12d ... Wall
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/68 Ｈ０１Ｌ 21/68 Ｎ (73)特許権者 390033020 Ｅａｔｏｎ Ｃｅｎｔｅｒ，Ｃｌｅｖｅ ｌａｎｄ，Ｏｈｉｏ 44114，Ｕ．Ｓ. Ａ. (56)参考文献 特開 平６−260486（ＪＰ，Ａ) 特開 平７−58039（ＪＰ，Ａ) 特開 平５−47688（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/324 H01L 21/205 H01L 21/68 ──────────────────────────────────────────────────続 き Continuation of front page (51) Int.Cl. 7 Identification symbol FI H01L 21/68 H01L 21/68 N (73) Patent holder 390033020 Eaton Center, Cleveland, Ohio 44114, U.S.A. (56) References JP-A-6-260486 (JP, A) JP-A-7-58039 (JP, A) JP-A-5-47688 (JP, A) (58) Fields studied (Int .Cl. 7 , DB name) H01L 21/324 H01L 21/205 H01L 21/68
Claims (5)
出する搬入口・搬出口を形成し、 上記加熱炉の下部に基台を配設して、該基台の上面側中
央部に凹状収納部を形成し、 上記基台の凹状収納部の底面中央部に、台本体の上面側
に前記搬入口・搬出口を介して搬入・搬出されるウエハ
ーを支持する複数の第１の支持突起を立設した固定台を
固定し、 上記固定台の上面側に、上記第１の支持突起を貫通させ
て上下動操作される支持台を配設し、 上記支持台の上面側に、上動時に熱処理するウエハーを
支持する複数の第２の支持突起と、上記ウエハーの周縁
部よりも若干大径となる大きさに形成した水平な保持体
とを取付けると共に、上記第２の支持突起がウエハーを支持したときの 上記保
持体の内周部とウエハーの周縁部との対向周面を、該ウ
エハーの外周縁部に対して熱伝導される間隔に近接した
ウエハー熱処理装置。1. The lower part of a heating furnaceofLoading and unloading wafers on side
Forming a carry-in / carry-out outlet, and disposing a base below the heating furnace,
A concave storage portion is formed in the center portion, and the upper surface side of the base body is formed at the center of the bottom surface of the concave storage portion of the base.
Wafers loaded and unloaded through the loading / unloading port
Support multipleFirstFixed stand with support projectionsTo
Fixed, On the top side of the fixed base,FirstPenetrate the support projection
A support table that is operated to move up and down is arranged, and a wafer to be heat-treated at the time of upward movement is placed on the upper side of the support table.
Support multipleSecondSupport projections and the periphery of the wafer
Horizontal holder that is slightly larger in diameter than the part
And attachWhen the second support protrusion supports the wafer Above
The opposite peripheral surface between the inner peripheral portion of the holding body and the peripheral portion of the wafer is
Close to the space where heat is conducted to the outer edge of the eher
Wafer heat treatment equipment.
出する搬入口・搬出口を形成し、 上記加熱炉の下部に基台を配設して、該基台の上面側中
央部に凹状収納部を形成し、 上記基台の凹状収納部の底面中央部に、台本体の上面側
に前記搬入口・搬出口を介して搬入・搬出されるウエハ
ーを支持する複数の第１の支持突起を立設した固定台を
固定し、 上記固定台の上面側に、上記第１の支持突起を貫通させ
て上下動操作される支持台を配設し、 上記支持台の上面側に、上記ウエハーの周縁部よりも若
干大径となる大きさに形 成した水平な保持体を取付ける
と共に、 上記保持体の内周部よりも内側に、上動時に熱処理する
ウエハーの下面側周縁部と対向してこれを支持する複数
の第３の支持突起を円周方向に対して等間隔に隔てて形
成し、 上記第３の支持突起がウエハーを支持したときの上記保
持体の内周部とウエハーの周縁部との対向周面を、該ウ
エハーの外周縁部に対して熱伝導される間隔に近接した
ウエハー熱処理装置。(2)Loading and unloading wafers into the lower part of the heating furnace
Forming the entrance and exit to take out, A base is provided at the lower part of the heating furnace, and the base is placed on the upper surface side of the base.
Form a concave storage section in the center, At the center of the bottom of the concave storage section of the base, on the top side of the base body
Wafers loaded and unloaded through the loading / unloading port
A fixed base on which a plurality of first support protrusions for supporting
Fixed, The first support protrusion penetrates through the upper surface of the fixing base.
Arrange a support that can be moved up and down, On the upper surface side of the support table, the height is lower than the periphery of the wafer.
Shaped to be large in diameter Attach horizontal support
Along with Inside the inner periphery of the holding body,Heat treatment when moving up
Facing the lower edge of the waferSupport thisMultiple
ofThirdSupport projections are spaced at equal intervals in the circumferential direction
Complete, When the third support projection supports the wafer,
The opposite peripheral surface between the inner peripheral portion of the holding body and the peripheral portion of the wafer is
Close to the space where heat is conducted to the outer edge of the eher
Wafer heat treatment equipment.
面側周縁部よりも上方に突出され、該ウエハーの上面側
周縁部に対して熱伝導される間隔に近接して第１の壁部
を形成した請求項１又は請求項２記載のウエハー熱処理
装置。3. A first protrusion protruding from an inner peripheral portion of the holder above an upper peripheral edge of the wafer, and close to an interval thermally conductive to the upper peripheral edge of the wafer . 3. The wafer heat treatment apparatus according to claim 1, wherein the wall is formed.
面側周縁部に対向して円周方向に形成され、該ウエハー
の下面側周縁部に対して熱伝導される間隔に近接して第
２の壁部を形成した請求項１，２又は請求項３記載のウ
エハー熱処理装置。4. An inner peripheral portion of the holding body, which is formed in a circumferential direction so as to face a lower peripheral edge of the wafer, and which is close to an interval thermally conductive to the lower peripheral edge of the wafer. First
Claim to form a second wall portion 2 or claim 3 wafer thermal processing apparatus according.
１又は２記載のウエハー熱処理装置。5. A wafer heat-treatment apparatus according to claim 1 or 2, wherein the configuration the holding body with silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29724396A JP3067658B2 (en) | 1996-10-17 | 1996-10-17 | Wafer heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29724396A JP3067658B2 (en) | 1996-10-17 | 1996-10-17 | Wafer heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10125690A JPH10125690A (en) | 1998-05-15 |
| JP3067658B2 true JP3067658B2 (en) | 2000-07-17 |
Family
ID=17844023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29724396A Expired - Fee Related JP3067658B2 (en) | 1996-10-17 | 1996-10-17 | Wafer heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3067658B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100425451B1 (en) * | 2001-06-29 | 2004-03-30 | 삼성전자주식회사 | Heating chamber and method for heating wafer using the same |
| JP2005019725A (en) * | 2003-06-26 | 2005-01-20 | Shinku Jikkenshitsu:Kk | Annealing device and annealing method |
| CN101569000B (en) * | 2007-09-03 | 2011-07-13 | 佳能安内华股份有限公司 | Substrate heat-treating apparatus, and substrate heat-treating method |
| CN109872965B (en) * | 2017-12-04 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Bearing device and reaction chamber |
-
1996
- 1996-10-17 JP JP29724396A patent/JP3067658B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10125690A (en) | 1998-05-15 |
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