JP3038274B2 - Optical semiconductor device - Google Patents

Optical semiconductor device

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Publication number
JP3038274B2
JP3038274B2 JP6386292A JP6386292A JP3038274B2 JP 3038274 B2 JP3038274 B2 JP 3038274B2 JP 6386292 A JP6386292 A JP 6386292A JP 6386292 A JP6386292 A JP 6386292A JP 3038274 B2 JP3038274 B2 JP 3038274B2
Authority
JP
Japan
Prior art keywords
wavelength
led chip
optical semiconductor
semiconductor device
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6386292A
Other languages
Japanese (ja)
Other versions
JPH05267758A (en
Inventor
望 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6386292A priority Critical patent/JP3038274B2/en
Publication of JPH05267758A publication Critical patent/JPH05267758A/en
Application granted granted Critical
Publication of JP3038274B2 publication Critical patent/JP3038274B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、3種類の発光波長を有
する光半導体装置に関し、特に、青、赤、緑の3源色発
光型に使用され、2個以上の青色LEDチップを直列に
接続した場合にも、高電圧電源を用いず、且つ3種類の
LEDチップを独立に制御できる光半導体装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device having three kinds of emission wavelengths, and more particularly, to an optical semiconductor device of a three-source color emission type of blue, red and green, in which two or more blue LED chips are connected in series. The present invention relates to an optical semiconductor device that can control three types of LED chips independently without using a high-voltage power supply even when connected.

【0002】[0002]

【従来の技術】従来技術による光半導体装置を、図3
(1)、(2)及び(3)を参照して説明する。
2. Description of the Related Art A conventional optical semiconductor device is shown in FIG.
Description will be made with reference to (1), (2) and (3).

【0003】図3(1)は、従来の光半導体装置の回路
図である。同図において、101は青色LEDチップ、
102は赤色LEDチップ、103は緑色LEDチップ
であり、各々1個づつのLEDチップを並列に接続して
いる。
FIG. 3A is a circuit diagram of a conventional optical semiconductor device. In the figure, 101 is a blue LED chip,
Reference numeral 102 denotes a red LED chip, and 103 denotes a green LED chip, each one of which is connected in parallel.

【0004】また、図3(3)は図3(1)の回路に制
御回路を付加した図である。LEDチップ101、10
2、103それぞれに対して、トタンジスタ111、1
12、113と電流制限用抵抗121、122、123
を直列に接続して、トランジスタのゲート端子F、G、
Hに制御パルスを供給することで、各々のLEDチップ
101、102、103を独立制御する。
FIG. 3 (3) is a diagram in which a control circuit is added to the circuit of FIG. 3 (1). LED chips 101, 10
2 and 103, respectively, the transistors 111, 1
12, 113 and current limiting resistors 121, 122, 123
Are connected in series, and the gate terminals F, G,
By supplying a control pulse to H, each LED chip 101, 102, 103 is independently controlled.

【0005】また一般に、青色LEDチップ101は、
赤色LEDチップ102及び緑色LEDチップ103に
比べて発光強度が低いため、図3(2)に示すように、
青色LEDチップ101、赤色LEDチップ102、及
び緑色LEDチップ103の比を2:1:1等にして、
青色の発光強度を強くするようにしている。
In general, a blue LED chip 101 is
Since the emission intensity is lower than the red LED chip 102 and the green LED chip 103, as shown in FIG.
By setting the ratio of the blue LED chip 101, the red LED chip 102, and the green LED chip 103 to 2: 1: 1 or the like,
The blue emission intensity is increased.

【0006】しかしながら、図3(2)のように、青色
LEDチップ101を2個直列に接続した構成とした場
合、端子A−B間、C−B間、及びD−B間の内、端子
A−B間のみが高い電圧を必要とすることとなり、特に
SiC系の材料を用いた青色LEDチップでは、端子A
−B間に7V〜8V程度の電圧を印加することが必要で
ある。
However, as shown in FIG. 3 (2), when two blue LED chips 101 are connected in series, the terminals A-B, C-B, and D-B can be connected. A high voltage is required only between A and B. In particular, in a blue LED chip using a SiC-based material, the terminal A
It is necessary to apply a voltage of about 7 V to 8 V between -B.

【0007】5V系のシステムでは、別系統として12
V等の高電圧の系を特別に用意したり、赤色LEDチッ
プ102及び緑色LEDチップ103に接続する電流制
限用抵抗122及び123の抵抗値を高くし、バランス
を取ることが必要となり、システム全体を12V系で駆
動する等の処置が必要であった。この場合には、電流制
限用抵抗121、122、123からの発熱量が多く、
放熱対策も難しくなっていた。
In a 5V system, 12
It is necessary to specially prepare a high-voltage system such as V or to increase the resistance values of the current limiting resistors 122 and 123 connected to the red LED chip 102 and the green LED chip 103 to balance them. , For example, was driven by a 12V system. In this case, the amount of heat generated from the current limiting resistors 121, 122, 123 is large,
Heat dissipation measures were also difficult.

【0008】[0008]

【発明が解決しようとする課題】以上のように、従来の
光半導体装置では、青色LEDチップを複数個直列に接
続した構成とした場合、別系統として高電圧の電源系を
特別に用意したり、他の赤色LEDチップ及び緑色LE
Dチップに接続する電流制限用抵抗の抵抗値を高くして
バランスを取ることが必要となり、システム全体を高電
圧電源系で駆動する等の処置が必要であり、電流制限用
抵抗からの発熱量が多く、放熱対策も難しいという欠点
があった。
As described above, in the conventional optical semiconductor device, when a plurality of blue LED chips are connected in series, a high-voltage power supply system is separately prepared as a separate system. , Other red LED chips and green LE
It is necessary to increase the resistance value of the current limiting resistor connected to the D chip to achieve a balance, and it is necessary to take measures such as driving the entire system with a high-voltage power supply system, and to generate heat from the current limiting resistor. However, there was a drawback that heat dissipation measures were difficult.

【0009】本発明は、上記問題点を解決するもので、
その目的は、3原色発光型の光半導体装置において、2
個以上の青色LEDチップを直列に接続した場合にも、
高電圧電源を用いず、且つ3種類のLEDチップを独立
に制御できる光半導体装置を提供することである。
The present invention solves the above problems,
Its purpose is to achieve two primary color light emitting type optical semiconductor devices.
When more than one blue LED chip is connected in series,
An object of the present invention is to provide an optical semiconductor device that can control three types of LED chips independently without using a high-voltage power supply.

【0010】[0010]

【課題を解決するための手段】前記課題を解決するため
に、本発明の光半導体装置の第1の特徴は、図1に示す
如く、少なくとも2個以上の直列に接続された第1の波
長のLEDチップ1−1及び1−2と、前記第1の波長
のLEDチップ1−1及び1−2間の接続点Eに、前記
一方の第1の波長のLEDチップ1−1と同極側を短絡
された第2の波長のLEDチップ2及び第3の波長のL
EDチップ3とを具備することである。
In order to solve the above problems, a first feature of the optical semiconductor device of the present invention is that, as shown in FIG. 1, at least two or more first wavelengths connected in series. At the connection point E between the LED chips 1-1 and 1-2 of the first wavelength and the LED chips 1-1 and 1-2 of the first wavelength, the same polarity as the LED chip 1-1 of the one first wavelength. The second wavelength LED chip 2 and the third wavelength L
The ED chip 3 is provided.

【0011】本発明の第2の特徴は、請求項1に記載の
光半導体装置において、前記光半導体装置は、2個の第
1の波長のLEDチップ1−1及び1−2、1個の第2
の波長のLEDチップ2、及び1個の第3の波長のLE
Dチップ3で1つのユニットを構成することである。
According to a second feature of the present invention, in the optical semiconductor device according to claim 1, the optical semiconductor device includes two LED chips 1-1 and 1-2 having a first wavelength and one LED chip having a first wavelength. Second
LED chip 2 of the third wavelength and one LE of the third wavelength
That is, one unit is constituted by the D chip 3.

【0012】本発明の第3の特徴は、請求項1または2
に記載の光半導体装置において、前記第1の波長のLE
Dチップ1−1及び1−2は、青色発光LEDチップで
あることである。
According to a third feature of the present invention, claim 1 or 2 is provided.
3. The optical semiconductor device according to claim 1, wherein the first wavelength
The D chips 1-1 and 1-2 are blue light emitting LED chips.

【0013】[0013]

【作用】本発明の第1、第2、及び第3の特徴の光半導
体装置では、図1に示す如く、少なくとも2個以上の直
列に接続された第1の波長のLEDチップ1−1及び1
−2の接続点Eに、一方の第1の波長のLEDチップ1
−1と同極側を短絡して第2の波長のLEDチップ2及
び第3の波長のLEDチップ3を接続し、第1の波長の
LEDチップ1−1及び1−2、第2の波長のLEDチ
ップ2、並びに第3の波長のLEDチップ3をそれぞれ
制御する制御回路5、6、7、及び8を、例えばサイリ
スタ11及び12と電流制限用抵抗13で構成し、一方
の第1の波長のLEDチップ1−1の位相を他のLED
チップに対して反転させて、サイリスタ11及び12の
ゲートのオン/オフ制御を行なうことにより、第1の波
長のLEDチップ1−1及び1−2、第2の波長のLE
Dチップ2、並びに第3の波長のLEDチップ3の発光
強度を独立制御する。
In the optical semiconductor device according to the first, second and third aspects of the present invention, as shown in FIG. 1, at least two or more LED chips 1-1 and 1-1 having the first wavelength connected in series. 1
-2 connection point E, one first wavelength LED chip 1
-1, the LED chip 2 of the second wavelength and the LED chip 3 of the third wavelength are connected, and the LED chips 1-1 and 1-2 of the first wavelength and the second wavelength are connected. The control circuits 5, 6, 7, and 8 for controlling the LED chip 2 of the third wavelength and the LED chip 3 of the third wavelength, respectively, are composed of, for example, thyristors 11 and 12 and a current limiting resistor 13, and one of the first Change the phase of the LED chip 1-1 of the wavelength to another LED.
By turning on / off the gates of the thyristors 11 and 12 by inverting the chips, the LED chips 1-1 and 1-2 of the first wavelength and the LE of the second wavelength
The emission intensity of the D chip 2 and the emission intensity of the LED chip 3 of the third wavelength are independently controlled.

【0014】これにより、2個以上の青色LEDチップ
を直列に接続した場合にも、別の高い電圧の電源系を用
いることなく、位相制御並びにゲートパルス供給のタイ
ミング制御を行なうことにより、3種類のLEDチップ
を独立に制御することができ、例えば、テレビジョン等
で使用しているRBG表示と同様に表示色を変化させる
ことができる。
Thus, even when two or more blue LED chips are connected in series, the phase control and the timing control of the gate pulse supply can be performed without using a separate high-voltage power supply system. LED chips can be controlled independently, and for example, the display color can be changed in the same manner as the RBG display used in a television or the like.

【0015】[0015]

【実施例】以下、本発明に係る実施例を図面に基づいて
説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0016】図1に本発明の一実施例に係る光半導体装
置の回路図を示す。
FIG. 1 is a circuit diagram of an optical semiconductor device according to one embodiment of the present invention.

【0017】図1(1)において、本実施例の光半導体
装置は、青色LEDチップ1−1及び1−2、赤色LE
Dチップ2、緑色LEDチップ3、並びに制御回路5、
6、7、及び8から構成されている。LEDチップの接
続は、青色LEDチップ1−1、赤色LEDチップ2、
及び緑色LEDチップ3を並列に接続して端子Eでグラ
ンドに接地し、更に青色LEDチップ1−2を直列に接
続した構成となっている。
In FIG. 1A, the optical semiconductor device of this embodiment includes a blue LED chips 1-1 and 1-2, a red LE
D chip 2, green LED chip 3, and control circuit 5,
6, 7, and 8. The connection of LED chip is blue LED chip 1-1, red LED chip 2,
And the green LED chip 3 are connected in parallel, grounded to the ground at the terminal E, and the blue LED chip 1-2 is connected in series.

【0018】制御回路5、6、7、及びは、それぞれ端
子A、B、C、及びDに接続されて、その構成は図1
(2)に示すように、サイリスタ11及び12と電流制
限用抵抗13とから構成されている。
The control circuits 5, 6, 7 and are connected to terminals A, B, C and D, respectively.
As shown in (2), thyristors 11 and 12 and a current limiting resistor 13 are provided.

【0019】端子Fには、図2(1)に示すような端子
Aに接続される制御回路5のみ位相が180度ずれた交
流電圧が供給され、また、それぞれの制御回路5、6、
7、及び8のサイリスタ11及び12のゲート端子に供
給するパルス電圧を制御することにより、図2(2)に
示すように波形制御された電流を青色LEDチップ1−
1及び1−2、赤色LEDチップ2、並びに緑色LED
チップ3に供給している。
As shown in FIG. 2A, only the control circuit 5 connected to the terminal A is supplied with an AC voltage whose phase is shifted by 180 degrees to the terminal F.
By controlling the pulse voltage supplied to the gate terminals of the thyristors 11 and 12 of the seventh and eighth thyristors, the current whose waveform is controlled as shown in FIG.
1 and 1-2, red LED chip 2, and green LED
It is supplied to chip 3.

【0020】従って、サイリスタ11及び12のゲート
端子に供給するパルス電圧を制御することにより、青色
LEDチップ1−1及び1−2、赤色LEDチップ2、
並びに緑色LEDチップ3の発光強度を独立制御するこ
とができ、テレビジョン等で使用しているRBG表示と
同様に表示色を変化させることができる。
Therefore, by controlling the pulse voltage supplied to the gate terminals of the thyristors 11 and 12, the blue LED chips 1-1 and 1-2, the red LED chip 2,
In addition, the emission intensity of the green LED chip 3 can be controlled independently, and the display color can be changed in the same manner as in the RBG display used in televisions and the like.

【0021】尚、本実施例では、図2(1)に示すよう
な正弦波の交流電流を使用しているが、供給電流はこれ
に限らず、図2(3)に示すような方形波であってもよ
い。また、青色LEDチップを2個の場合について説明
したが、3個以上を直列に接続した構成であってもよ
い。
In this embodiment, a sine wave alternating current as shown in FIG. 2A is used. However, the supply current is not limited to this, and a square wave as shown in FIG. It may be. Further, the case where two blue LED chips are used has been described, but a configuration in which three or more blue LED chips are connected in series may be used.

【0022】[0022]

【発明の効果】以上のように本発明によれば、少なくと
も2個以上の直列に接続された第1の波長のLEDチッ
プの接続点に、一方の第1の波長のLEDチップと同極
側を短絡して第2の波長のLEDチップ及び第3の波長
のLEDチップを接続し、制御回路を、例えばサイリス
タと電流制限用抵抗で構成し、一方の第1の波長のLE
Dチップの位相を他のLEDチップに対して反転させ
て、サイリスタのゲートのオン/オフ制御を行なうこと
により、第1の波長のLEDチップ、第2の波長のLE
Dチップ、及び第3の波長のLEDチップの発光強度を
独立制御することとしたので、2個以上の青色LEDチ
ップを直列に接続した場合にも、別の高電圧電源系を用
いることなく、3種類のLEDチップを独立に制御可能
な光半導体装置を提供することができる。
As described above, according to the present invention, at least two or more series-connected LED chips of the first wavelength are connected to the same polarity side as one of the first wavelength LED chips. Is short-circuited to connect the LED chip of the second wavelength and the LED chip of the third wavelength, and the control circuit is composed of, for example, a thyristor and a current limiting resistor, and the LE of one of the first wavelengths is connected.
By inverting the phase of the D chip with respect to the other LED chips and performing on / off control of the gate of the thyristor, the first wavelength LED chip and the second wavelength LE chip are controlled.
Since the emission intensity of the D chip and the LED chip of the third wavelength are independently controlled, even when two or more blue LED chips are connected in series, without using another high-voltage power supply system, An optical semiconductor device capable of independently controlling three types of LED chips can be provided.

【0023】また、第1の波長のLEDチップが直列に
接続されている為、並列に第1の波長のLEDチップを
接続した場合に比べて、低電流源にて駆動させることが
可能である。
Further, since the LED chips of the first wavelength are connected in series, it is possible to drive with a lower current source than in the case where the LED chips of the first wavelength are connected in parallel. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1(1)は本発明の一実施例に係る光半導体
装置の回路図、図1(2)は制御回路の回路図である。
FIG. 1A is a circuit diagram of an optical semiconductor device according to an embodiment of the present invention, and FIG. 1B is a circuit diagram of a control circuit.

【図2】図2(1)は実施例の各制御回路の電圧波形
図、図2(2)は各LEDチップに供給される供給電流
波形図、図2(3)は制御回路の他の電圧波形図であ
る。
FIG. 2 (1) is a voltage waveform diagram of each control circuit of the embodiment, FIG. 2 (2) is a supply current waveform diagram supplied to each LED chip, and FIG. 2 (3) is another control circuit. It is a voltage waveform diagram.

【図3】図3(1)は従来の光半導体装置の回路図、図
3(2)は従来の別の光半導体装置の回路図、図3
(3)は制御回路を付加した回路図である。
3A is a circuit diagram of a conventional optical semiconductor device, FIG. 3B is a circuit diagram of another conventional optical semiconductor device, and FIG.
(3) is a circuit diagram to which a control circuit is added.

【符号の説明】[Explanation of symbols]

1−1,1−2,101 第1の波長のLEDチップ
(青色発光LEDチップ) 2,102 第2の波長のLEDチップ(赤色発光LE
Dチップ) 3,103 第3の波長のLEDチップ(緑色発光LE
Dチップ) 11,12 サイリスタ 13,121〜123 電流制限抵抗 111〜113 トランジスタ A,B,C,D,E,F 端子
1-1, 1-2, 101 LED chip of first wavelength (blue light emitting LED chip) 2,102 LED chip of second wavelength (red light emitting LE
D chip) 3,103 LED chip of third wavelength (green light emitting LE)
D chip) 11, 12 Thyristor 13, 121 to 123 Current limiting resistor 111 to 113 Transistor A, B, C, D, E, F terminal

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 少なくとも2個以上の直列に接続された
第1の波長のLEDチップと、前記第1の波長のLED
チップ間の接続点に、前記一方の第1の波長のLEDチ
ップと同極側を短絡された第2の波長のLEDチップ及
び第3の波長のLEDチップとを有することを特徴とす
る光半導体装置。
1. At least two or more LED chips of a first wavelength connected in series, and an LED chip of the first wavelength
An optical semiconductor, comprising, at a connection point between the chips, an LED chip of a second wavelength and a LED chip of a third wavelength, the one of which is short-circuited on the same pole side as the LED chip of the first wavelength. apparatus.
【請求項2】 前記光半導体装置は、2個の第1の波長
のLEDチップ、1個の第2の波長のLEDチップ、及
び1個の第3の波長のLEDチップで1つのユニットを
構成することを特徴とする請求項1に記載の光半導体装
置。
2. The optical semiconductor device comprises one unit including two LED chips of a first wavelength, one LED chip of a second wavelength, and one LED chip of a third wavelength. The optical semiconductor device according to claim 1, wherein:
【請求項3】 前記第1の波長のLEDチップは、青色
発光LEDチップであることを特徴とする請求項1また
は2に記載の光半導体装置。
3. The optical semiconductor device according to claim 1, wherein the LED chip of the first wavelength is a blue light emitting LED chip.
JP6386292A 1992-03-19 1992-03-19 Optical semiconductor device Expired - Fee Related JP3038274B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6386292A JP3038274B2 (en) 1992-03-19 1992-03-19 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6386292A JP3038274B2 (en) 1992-03-19 1992-03-19 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPH05267758A JPH05267758A (en) 1993-10-15
JP3038274B2 true JP3038274B2 (en) 2000-05-08

Family

ID=13241561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6386292A Expired - Fee Related JP3038274B2 (en) 1992-03-19 1992-03-19 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JP3038274B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4585398B2 (en) * 2005-07-25 2010-11-24 サンクス株式会社 Display device and detection sensor having the device

Also Published As

Publication number Publication date
JPH05267758A (en) 1993-10-15

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