JP3024793B2 - Microwave discharge reactor - Google Patents
Microwave discharge reactorInfo
- Publication number
- JP3024793B2 JP3024793B2 JP2321906A JP32190690A JP3024793B2 JP 3024793 B2 JP3024793 B2 JP 3024793B2 JP 2321906 A JP2321906 A JP 2321906A JP 32190690 A JP32190690 A JP 32190690A JP 3024793 B2 JP3024793 B2 JP 3024793B2
- Authority
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- Japan
- Prior art keywords
- substrate
- electromagnet
- magnetic field
- plasma
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 54
- 230000003993 interaction Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はマイクロ波放電反応装置に関し、特にドライ
エッチング装置、プラズマCVD装置、スパッタリング装
置、表面改質装置などに適したマイクロ波放電反応装置
に関するものである。Description: TECHNICAL FIELD The present invention relates to a microwave discharge reactor, and more particularly to a microwave discharge reactor suitable for a dry etching apparatus, a plasma CVD apparatus, a sputtering apparatus, a surface reforming apparatus, and the like. Things.
従来、マイクロ波と磁界との相互作用を応用した薄膜
形成装置の例としては、電子サイクロトロン共鳴（EC
R）を利用したものがある。この装置では電磁石による
磁場発生手段を設けたマイクロ波放電反応装置が知られ
る。かかる装置は例えば、下記の文献に記載されてい
る。Conventional examples of a thin film forming apparatus that utilizes the interaction between a microwave and a magnetic field include electron cyclotron resonance (EC).
R) is available. As this device, a microwave discharge reaction device provided with a magnetic field generating means using an electromagnet is known. Such an apparatus is described, for example, in the following literature.
アン・エレクトロン・サイクロトロン・リゾナンス・
プラズマ・デポジション・テクニク・イムプロイング・
マグネトロン・モード・スパタリング（An electoron c
yclotron resonance plasma deposition technique emp
loying magnetron mode sputtering）C.Takahashi,M.Ki
uchi,T.Ono and E.Matsuo J.Vac Sci ＆ Technol A6 19
88 pp.2348〜2350 次に第３図を参照して従来の典型的なマイクロ波放電
反応装置の要部を説明する。第３図において31はマイク
ロ波導波管、32はマイクロ波導入窓、33はコイル状に形
成された電磁石、34はプラズマ生成室である。プラズマ
生成室34を形成する下部の壁部は開口部35が形成されて
おり、その下方には基板支持機構36が配設され、基板支
持機構36の上面には基板37が配置される。なお第３図に
おいて、本来装置構成として必要なマイクロ波発生装置
と、ガス導入装置と、真空状態を作るための排気系と、
真空容器は、説明の便宜上及び本発明の要旨との関係
上、その図示を省略している。Ann Electron Cyclotron Resonance
Plasma Deposition Technic Implanting
Magnetron mode sputtering (An electoron c
yclotron resonance plasma deposition technique emp
loying magnetron mode sputtering) C.Takahashi, M.Ki
uchi, T.Ono and E.Matsuo J.Vac Sci & Technol A6 19
88 pp. 2348-2350 Next, with reference to FIG. 3, a main part of a conventional typical microwave discharge reactor will be described. In FIG. 3, 31 is a microwave waveguide, 32 is a microwave introduction window, 33 is an electromagnet formed in a coil shape, and 34 is a plasma generation chamber. An opening 35 is formed in a lower wall portion forming the plasma generation chamber 34, a substrate support mechanism 36 is provided below the opening 35, and a substrate 37 is disposed on an upper surface of the substrate support mechanism 36. In FIG. 3, a microwave generator, a gas introduction device, and an exhaust system for creating a vacuum state, which are originally required as the device configuration,
The vacuum vessel is not shown for convenience of explanation and for the purpose of the present invention.
上記のマイクロ波放電反応装置では、プラズマ生成室
34の内部に、マイクロ波導入管31で供給されるマイクロ
波と電磁石33で発生する磁場との相互作用に基づき、ガ
ス導入機構で導入される所定のガスをプラズマ化し、こ
うしてプラズマを発生する。プラズマ生成室34に発生し
たプラズマは37の如く開口部35から基板37の方向に引き
出され、基板37に与えられる。これによって基板37は処
理される。In the microwave discharge reactor described above, the plasma generation chamber
A predetermined gas introduced by the gas introduction mechanism is turned into plasma based on the interaction between the microwave supplied by the microwave introduction tube 31 and the magnetic field generated by the electromagnet 33, thereby generating plasma. The plasma generated in the plasma generation chamber 34 is drawn out from the opening 35 toward the substrate 37 as shown at 37 and is provided to the substrate 37. Thus, the substrate 37 is processed.
上記のマイクロ波放電反応装置にてプラズマ生成室34
で生成されたプラズマを引き出して基板37の処理に利用
することにおいて、基板の表面を均一良く処理する場
合、従来の装置で均一良く処理できる基板の外径はせい
ぜい電磁石33の内径と同程度の寸法が限界であった。す
なわち、電磁石33の内径程度よりも大きい径を有した大
型の基板についてその表面を均一良く処理することがで
きなかった。これは、第４図に示すように、電磁石33の
下側端部では電磁石によって作られる磁力線39が外側に
拡がり、基板37の周縁部の領域では磁場の方向が一様で
はなくなり、この磁場方向に従ってプラズマが拡散し、
その均一性を保つことができないからである。このプラ
ズマの拡散した引出し状態は第３図の38からも明らかで
ある。Plasma generation chamber 34 in the above microwave discharge reactor
When the plasma generated in the above is extracted and used for processing the substrate 37, when the surface of the substrate is uniformly processed, the outer diameter of the substrate that can be uniformly processed by the conventional apparatus is at most about the same as the inner diameter of the electromagnet 33. Dimensions were critical. That is, the surface of a large-sized substrate having a diameter larger than the inner diameter of the electromagnet 33 could not be uniformly treated. This is because, as shown in FIG. 4, the magnetic field lines 39 formed by the electromagnets spread outward at the lower end of the electromagnet 33, and the direction of the magnetic field is not uniform in the region of the peripheral portion of the substrate 37. The plasma diffuses according to
This is because the uniformity cannot be maintained. The state in which the plasma is diffused and drawn is also apparent from 38 in FIG.
加えて、プラズマ生成室34の開口部35の大きさでわか
るように、基板37上にプラズマを集束させるため、引出
し口である開口部を絞り込んで形成している。従って、
生成されたプラズマを有効に利用することができないと
いう欠点がある。また基板37の縁部表面では、前述の通
り磁力線が外側に拡がっているため、基板37の処理表面
に対してイオンが垂直に入射しないという不具合も存在
する。In addition, as can be seen from the size of the opening 35 of the plasma generation chamber 34, in order to focus the plasma on the substrate 37, the opening serving as the outlet is narrowed down. Therefore,
There is a disadvantage that the generated plasma cannot be used effectively. Further, on the edge surface of the substrate 37, as described above, since the magnetic field lines are spread outward, there is also a disadvantage that ions do not enter the processing surface of the substrate 37 perpendicularly.
本発明の目的は、前述した問題点を解決するためにな
されたものであり、従来と同じ大きさのコイル状電磁石
を利用し且つ従来のマイクロ波放電反応装置と実質的に
同じ大きさの装置によって径の大きな基板を処理するこ
とができ、更に当該表面処理を均一性及び異方性を良好
に保って高速に行うことができるマイクロ波放電反応装
置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and uses a coiled electromagnet of the same size as the conventional one and an apparatus of substantially the same size as the conventional microwave discharge reaction apparatus. Accordingly, it is an object of the present invention to provide a microwave discharge reactor capable of processing a substrate having a large diameter and performing the surface treatment at a high speed while maintaining good uniformity and anisotropy.
本発明に係るマイクロ波放電反応装置は、前記目的を
達成するため、内部が減圧状態に保持され、当該内部に
プラズマ生成室と処理室を有する真空容器と、プラズマ
生成室に所定の処理ガスを導入するガス導入機構と、プ
ラズマ生成室にマイクロ波を導入するマイクロ波導入機
構と、プラズマ生成室に磁場を形成するコイル状電磁石
と、基板を支持する基板支持機構を備え、電磁石は、そ
の中心軸が基板の成膜面に垂直でその中心に実質的に一
致するように配置され、マイクロ波と磁場との相互作用
により処理ガスをプラズマ化してプラズマ生成室にプラ
ズマを生成し、このプラズマを開口部を通して処理室に
送り基板支持機構上の基板をプラズマで処理するマイク
ロ波放電反応装置において、電磁石と基板の間であって
電磁石の基板側の端部位置に、リング状永久磁石を、電
磁石と永久磁石の中心軸が一致し且つ電磁石と永久磁石
の各磁場の方向が揃い、さらに電磁石で形成される磁場
とこの磁場と同方向に形成される永久磁石による磁場と
が合成されるように配置し、基板の前面空間の広い範囲
に最適磁場を形成するように構成される。In order to achieve the above object, the microwave discharge reaction device according to the present invention has an inside maintained in a reduced pressure state, a vacuum vessel having a plasma generation chamber and a processing chamber therein, and a predetermined processing gas supplied to the plasma generation chamber. It has a gas introduction mechanism for introducing gas, a microwave introduction mechanism for introducing microwaves into the plasma generation chamber, a coiled electromagnet for forming a magnetic field in the plasma generation chamber, and a substrate support mechanism for supporting a substrate. The axis is perpendicular to the film-forming surface of the substrate and is disposed so as to substantially coincide with the center thereof. The interaction between the microwave and the magnetic field turns the processing gas into plasma to generate plasma in the plasma generation chamber. In a microwave discharge reaction apparatus in which a substrate on a substrate support mechanism is processed with plasma by feeding the substrate to a processing chamber through an opening, an end of the electromagnet between the substrate and the substrate side. At the position, a ring-shaped permanent magnet is formed by aligning the central axes of the electromagnet and the permanent magnet, aligning the directions of the respective magnetic fields of the electromagnet and the permanent magnet, and furthermore, the permanent magnet formed in the same direction as the magnetic field formed by the electromagnet. The magnetic field generated by the magnet is arranged so as to be synthesized, and the optimum magnetic field is formed in a wide range of the front space of the substrate.
本発明に係るマイクロ波放電反応装置は、前記の構成
において、前記最通磁場が、前記広い範囲で基板の表面
に対して実質的に垂直な磁場であることを特徴点として
有する。The microwave discharge reaction device according to the present invention is characterized in that, in the above configuration, the most permeable magnetic field is a magnetic field substantially perpendicular to the surface of the substrate in the wide range.
本発明に係るマイクロ波放電反応装置は、前記の構成
において、更に、リング状永久磁石の内径が電磁石の内
径と実質的に同じであり、その外径が電磁石の外径と同
程度又は外径よりも大きいことを特徴点として有する。In the microwave discharge reaction device according to the present invention, in the above configuration, further, the inner diameter of the ring-shaped permanent magnet is substantially the same as the inner diameter of the electromagnet, and the outer diameter is substantially equal to or the outer diameter of the electromagnet. It is larger than that as a feature point.
本発明によるマイクロ波放電反応装置では、コイル状
電磁石において基板が配置される側の端部位置に電磁石
と同一の極配置でリング形状の永久磁石を配設し、且つ
電磁石の中心軸と永久磁石の中心軸とを一致させ且つ各
磁場の方向が揃うように配置すると、電磁石よる磁場と
永久磁石による磁場とが合成され、基板表面の前面空間
の広い範囲にわたって磁力線の分布を一様に且つ当該表
面の全体に対して実質的に垂直に形成でき、最適な磁場
を形成することが可能となる。In the microwave discharge reaction device according to the present invention, a ring-shaped permanent magnet is disposed at the end position on the side where the substrate is disposed in the coiled electromagnet with the same pole arrangement as the electromagnet, and the central axis of the electromagnet and the permanent magnet When the magnetic field from the electromagnets and the magnetic field from the permanent magnets are combined, the distribution of the lines of magnetic force is uniformly and widely distributed over a wide area in front of the substrate surface. It can be formed substantially perpendicular to the entire surface, and an optimum magnetic field can be formed.
以下に、本発明の実施例を添付図面に基づいて説明す
る。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図及び第２図は本発明に係るマイクロ波放電反応
装置の実施例を示し、第１図は要部構成を示す縦断面
図、第２図は基板表面周辺における磁力線の分布状態図
を示す。1 and 2 show an embodiment of the microwave discharge reaction device according to the present invention. FIG. 1 is a longitudinal sectional view showing a main part configuration, and FIG. 2 is a distribution diagram of magnetic force lines around a substrate surface. Show.
第１図において、１はマイクロ波導波管、２は真空容
器、３は真空容器２の壁部に形成されたマイクロ波導入
窓である。真空容器２はプラズマ生成室４と処理室５を
備えている。プラズマ生成室４には前記マイクロ波が導
入され、処理室５には基板支持機構６が配設されてい
る。プラズマ生成室４と処理室５との間には生成された
プラズマが処理室５に供給されているための開口部７が
設けられ、プラズマ生成室４と処理室５とは通じてい
る。開口部７は絞り形状を有しておらず，プラズマ生成
室４との大きさとの関係において可能の限り大きく形成
されている。処理室５内に配設される基板支持機構６は
その上部に平板部を備え、その上面に基板８を配置して
いる。第１図から明らかなように、基板８の径は、開口
部７の径よりもかなり大きくなっている。In FIG. 1, 1 is a microwave waveguide, 2 is a vacuum vessel, and 3 is a microwave introduction window formed on the wall of the vacuum vessel 2. The vacuum vessel 2 has a plasma generation chamber 4 and a processing chamber 5. The microwave is introduced into the plasma generation chamber 4, and the substrate support mechanism 6 is provided in the processing chamber 5. An opening 7 for supplying the generated plasma to the processing chamber 5 is provided between the plasma generating chamber 4 and the processing chamber 5, and the plasma generating chamber 4 and the processing chamber 5 communicate with each other. The opening 7 does not have an aperture shape and is formed as large as possible in relation to the size of the plasma generation chamber 4. The substrate support mechanism 6 provided in the processing chamber 5 has a flat plate portion on its upper part, and the substrate 8 is disposed on its upper surface. As is clear from FIG. 1, the diameter of the substrate 8 is considerably larger than the diameter of the opening 7.
プラズマ生成室４の周囲には巻線によって形成される
電磁石９が配設される。筒型コイル状の電磁石９の個数
は少なくとも１個であり、図示例では上下に２個配設さ
れている。更に電磁石９の下側の基板側端部位置であっ
て、且つプラズマ生成室４の開口部７が形成される周囲
の空間に所定の磁場を発生するリング形状の永久磁石10
を配設している。電磁石９の中心軸と永久磁石10の中心
軸とは一致し且つそれぞれの磁場の方向が同一方向にて
揃うように配置される。永久磁石10は、基板８の前面位
置でECR条件を満たすことのできる磁場強度を発生する
ものが使用されることが望まれる。更に前述の電磁石９
についても同様に基板８の前面位置でECR条件を満たす
ものが使用されるとする。An electromagnet 9 formed by windings is provided around the plasma generation chamber 4. The number of the cylindrical coil-shaped electromagnets 9 is at least one, and in the illustrated example, two are arranged vertically. Further, a ring-shaped permanent magnet 10 for generating a predetermined magnetic field in the space below the electromagnet 9 at the substrate-side end position and in the surrounding space where the opening 7 of the plasma generation chamber 4 is formed.
Is arranged. The central axis of the electromagnet 9 is aligned with the central axis of the permanent magnet 10 and the directions of the respective magnetic fields are arranged in the same direction. It is desired that the permanent magnet 10 generate a magnetic field intensity that satisfies the ECR condition at the front position of the substrate 8. Further, the aforementioned electromagnet 9
Similarly, it is assumed that the one which satisfies the ECR condition at the front position of the substrate 8 is used.
電磁石９と永久磁石10のそれぞれが発生する磁場が合
成され、その結果生じる磁場の分布状態を磁力線で表し
たものを第２図に示す。第２図において11は磁力線を示
し、一例として、電磁石９により図中下側位置がＮ極、
上側位置がＳ極になるように磁場が形成され、リング状
永久磁石10では下面がＮ極、上面がＳ極となり、極の配
置が電磁石９と同様になるように磁場が形成される。上
記の如きＮ極及びＳ極の配置により、電磁石９では中央
空間部で下方向に向う磁力線が形成され、下端部の開口
部より周囲外方に広がり、その周囲空間部で上方向に向
う磁力線が形成される。これに対して永久磁石10では、
その内径縁及び外径縁でそれらの各縁に沿って下面から
上面に至る磁力線が形成されると共に、下面のほぼ中央
周辺部分では下方にほぼ垂直に磁力線が形成されて、分
布している。電磁石９と永久磁石10による上記磁力線分
布に基づけば、電磁石９と永久磁石10の各磁場が合成さ
れることにより、基板８の前面空間においては、第２図
に示す如く基板の表面全体において当該表面に対して実
質的に垂直に入り込むような磁力線11が形成される。The magnetic field generated by each of the electromagnet 9 and the permanent magnet 10 is synthesized, and the resulting distribution of the magnetic field is shown by magnetic field lines in FIG. In FIG. 2, reference numeral 11 denotes lines of magnetic force. As an example, the lower position in the figure is an N pole by an electromagnet 9;
The magnetic field is formed such that the upper position is the S pole, and the lower surface of the ring-shaped permanent magnet 10 is the N pole and the upper surface is the S pole, and the magnetic field is formed such that the arrangement of the poles is similar to that of the electromagnet 9. Due to the arrangement of the north pole and the south pole as described above, magnetic lines of force are formed in the electromagnet 9 so as to extend downward in the central space, spread outward from the opening at the lower end, and upward in the peripheral space. Is formed. On the other hand, in the permanent magnet 10,
Lines of magnetic force from the lower surface to the upper surface are formed along the respective inner and outer diameter edges at the inner and outer diameter edges, and magnetic lines of force are formed and distributed substantially vertically downward in a substantially central portion of the lower surface. Based on the magnetic field line distribution by the electromagnets 9 and the permanent magnets 10, the respective magnetic fields of the electromagnets 9 and the permanent magnets 10 are combined, so that in the space in front of the substrate 8 as shown in FIG. The lines of magnetic force 11 penetrate substantially perpendicular to the surface are formed.
その他の装置構成については従来のマイクロ波放電反
応装置の構成と同じであり、ただし説明の便宜上マイク
ロ波発生装置、ガス導入系、排気系等の装置構成の図示
は省略されている。Other configurations of the apparatus are the same as those of the conventional microwave discharge reaction apparatus. However, for convenience of description, illustration of the configuration of the microwave generation apparatus, the gas introduction system, the exhaust system, and the like is omitted.
上記マイクロ波放電反応装置を動作させるためには、
前述した図示しない排気系により真空容器２の内部を所
要の真空状態とし、その後図示しないガス導入系により
所定のガスを真空容器２のプラズマ生成室４に導入し、
更にガス導入流量と排気速度を便宜に調整することによ
り所定のガス圧を状態を作る。このときのガス圧は、通
常10-3Torr〜10-6Torr程度である。To operate the microwave discharge reactor,
The inside of the vacuum vessel 2 is brought into a required vacuum state by the above-described exhaust system (not shown), and thereafter, a predetermined gas is introduced into the plasma generation chamber 4 of the vacuum vessel 2 by a gas introduction system (not shown),
Further, a predetermined gas pressure is created by adjusting the gas introduction flow rate and the exhaust speed for convenience. The gas pressure at this time is usually about 10 −3 Torr to 10 −6 Torr.
上記の条件下でマイクロ波放電を発生させる。図示し
ないマイクロ波電源からアイソレータ、パワーモータ、
チューナ等の立体回路素子を経由してマイクロ波を誘導
し、マイクロ波導波管１及びマイクロ波導入窓３を介し
て真空容器２のプラズマ生成室４にマイクロ波を放射す
る。プラズマ生成室４では、マイクロ波放電により発生
する電子と、電磁石９及び永久磁石10により発生した磁
場との相互作用によりプラズマが生成される。A microwave discharge is generated under the above conditions. From microwave power supply not shown, isolator, power motor,
Microwaves are guided through a three-dimensional circuit element such as a tuner, and are radiated to the plasma generation chamber 4 of the vacuum vessel 2 through the microwave waveguide 1 and the microwave introduction window 3. In the plasma generation chamber 4, plasma is generated by interaction between electrons generated by microwave discharge and a magnetic field generated by the electromagnet 9 and the permanent magnet 10.
前記実施例によるマイクロ波放電反応装置の構成で
は、電磁石９の下側位置に永久磁石10を配設し、開口部
７及び基板８の前面空間における磁場強度を最適にし
た。具体的には、従来存在した磁力線の外側への拡散を
なくし、且つ当該磁力線が、開口部７よりも大きな径を
有する大型基板の処理表面に対して全表面で実質的に垂
直になり、更に大型基板の表面における磁力線の分布が
一様且つ表面に対して垂直になるように設計した。更
に、特に基板８の前面でECR条件が満足された場合には
高密度のECRプラズマが生成され、処理速度を高めるこ
とができる。以上の結果、大きな処理面積を有する大型
基板を高速で且つ均一性良く処理することが可能とな
り、更に異方性についても向上させることができる。In the configuration of the microwave discharge reaction device according to the above embodiment, the permanent magnet 10 is disposed below the electromagnet 9 to optimize the magnetic field strength in the opening 7 and the space in front of the substrate 8. Specifically, it eliminates the diffusion of the magnetic field lines existing in the past to the outside, and the magnetic field lines become substantially perpendicular to the processing surface of the large substrate having a diameter larger than the opening 7 on the entire surface. The design was made such that the distribution of the lines of magnetic force on the surface of the large substrate was uniform and perpendicular to the surface. Further, when the ECR condition is satisfied particularly on the front surface of the substrate 8, high-density ECR plasma is generated, and the processing speed can be increased. As a result, a large substrate having a large processing area can be processed at high speed and with good uniformity, and the anisotropy can be improved.
なお異方性が良好になる理由は、ECRではガス圧力の
低い状態で放電できるため散乱の影響が非常に小さく、
且つもともとのイオンの向きを揃えることにより基板に
入射するイオンを垂直に揃えることができるからであ
る。The reason for the good anisotropy is that ECR can discharge at low gas pressure, so the effect of scattering is very small,
Also, by aligning the original ions, the ions incident on the substrate can be aligned vertically.
磁力線の分布については、電磁石９及び永久磁石10の
それぞれの極配置を共に反転させても同様な効果を得る
ことができる。Regarding the distribution of the lines of magnetic force, the same effect can be obtained even if the respective pole arrangements of the electromagnet 9 and the permanent magnet 10 are both reversed.
以上の説明で明らかなように、本発明によれば、プラ
ズマ放電反応装置のコイル状電磁石に対して所定の配置
関係でリング状永久磁石を配置するようにしたため、大
面積の基板を均一性及び異方性良く、更に高速に表面処
理することができる。As is clear from the above description, according to the present invention, the ring-shaped permanent magnets are arranged in a predetermined arrangement relationship with respect to the coiled electromagnets of the plasma discharge reaction apparatus, so that a large-area substrate can be formed with uniformity and uniformity. Surface treatment can be performed at high speed with good anisotropy.
第１図は本発明に係るマイクロ波放電反応装置の一実施
例を示す要部縦断面図、第２図は本発明によるマイクロ
波放電反応装置での磁力線分布状態図、第３図は従来の
マイクロ波放電反応装置の構成例を示す縦断面図、第４
図は従来装置における磁力線分布状態図である。 〔符号の説明〕 １……マイクロ波導波管 ２……真空容器 ３……マイクロ波導入窓 ４……プラズマ生成室 ５……処理室 ６……基板支持機構 ７……開口部 ８……基板 ９……電磁石 10……永久磁石 11……磁力線FIG. 1 is a longitudinal sectional view showing a main part of an embodiment of a microwave discharge reactor according to the present invention, FIG. 2 is a diagram showing magnetic flux distribution in the microwave discharge reactor according to the present invention, and FIG. FIG. 4 is a longitudinal sectional view showing a configuration example of a microwave discharge reaction device, and FIG.
The figure is a magnetic field distribution diagram in the conventional device. [Description of Signs] 1 ... Microwave waveguide 2 ... Vacuum vessel 3 ... Microwave introduction window 4 ... Plasma generation chamber 5 ... Processing chamber 6 ... Substrate support mechanism 7 ... Opening 8 ... Substrate 9 Electromagnet 10 Permanent magnet 11 Magnetic lines of force
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｊ 37/30 Ｈ０１Ｊ 37/30 Ｚ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification code FI H01J 37/30 H01J 37/30 Z
Claims (3)
ラズマ生成室と処理室を有する真空容器と、前記前記プ
ラズマ生成室に所定の処理ガスを導入するガス導入機構
と、前記プラズマ生成室にマイクロ波を導入するマイク
ロ波導入機構と、前記プラズマ生成室に磁場を形成する
コイル状電磁石と、基板を支持する基板支持機構を備
え、前記電磁石は、その中心軸が前記基板の成膜面に垂
直でその中心に実質的に一致するように配置され、前記
マイクロ波と前記磁場との相互作用により前記処理ガス
をプラズマ化して前記プラズマ生成室にプラズマを生成
し、このプラズマを開口部を通して前記処理室に送り前
記基板支持機構上の前記基板を前記プラズマで処理する
マイクロ波放電反応装置において、 前記電磁石と前記基板の間であって前記電磁石の基板側
の端部位置に、リング状永久磁石を、前記電磁石と前記
永久磁石の中心軸が一致し且つ前記電磁石と前記永久磁
石の各磁場の方向が揃い、さらに前記電磁石で形成され
る磁場とこの磁場と同方向に形成される前記永久磁石に
よる磁場とが合成されるように配置し、前記基板の前面
空間の広い範囲に最適磁場を形成するようにしたことを
特徴とするマイクロ波放電反応装置。A vacuum chamber having an interior maintained in a reduced pressure state and having a plasma generation chamber and a processing chamber therein; a gas introducing mechanism for introducing a predetermined processing gas into the plasma generation chamber; A microwave introduction mechanism that introduces microwaves into the plasma, a coiled electromagnet that forms a magnetic field in the plasma generation chamber, and a substrate support mechanism that supports a substrate, wherein the electromagnet has a center axis on a film forming surface of the substrate. Perpendicularly to the center of the processing gas, the processing gas is turned into plasma by the interaction of the microwave and the magnetic field to generate plasma in the plasma generation chamber, and the plasma is passed through the opening. In a microwave discharge reaction apparatus for processing the substrate on the substrate support mechanism with the plasma by sending the substrate to the processing chamber, the microwave discharge reaction device is provided between the electromagnet and the substrate. A ring-shaped permanent magnet is formed at the end position of the electromagnet on the substrate side, wherein the electromagnet and the permanent magnet have the same central axis, and the directions of the magnetic fields of the electromagnet and the permanent magnet are aligned, and are further formed by the electromagnet. A microwave, wherein a magnetic field and a magnetic field generated by the permanent magnet formed in the same direction as the magnetic field are arranged so as to be combined, and an optimum magnetic field is formed in a wide range of a front space of the substrate. Discharge reactor.
おいて、前記最適磁場は、前記広い範囲で前記基板の表
面に対して実質的に垂直な磁場であることを特徴とする
マイクロ波放電反応装置。2. The microwave discharge reaction apparatus according to claim 1, wherein the optimum magnetic field is a magnetic field substantially perpendicular to the surface of the substrate in the wide range. apparatus.
装置において、前記リング状永久磁石の内径は前記電磁
石の内径と実質的に同じであり、その外径は電磁石の外
径と同程度又は前記外径よりも大きいことを特徴とする
マイクロ波放電反応装置。3. The microwave discharge reactor according to claim 1, wherein the inner diameter of the ring-shaped permanent magnet is substantially the same as the inner diameter of the electromagnet, and the outer diameter is substantially equal to the outer diameter of the electromagnet. Alternatively, the microwave discharge reaction device is larger than the outer diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2321906A JP3024793B2 (en) | 1990-11-26 | 1990-11-26 | Microwave discharge reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2321906A JP3024793B2 (en) | 1990-11-26 | 1990-11-26 | Microwave discharge reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04191380A JPH04191380A (en) | 1992-07-09 |
| JP3024793B2 true JP3024793B2 (en) | 2000-03-21 |
Family
ID=18137726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2321906A Expired - Lifetime JP3024793B2 (en) | 1990-11-26 | 1990-11-26 | Microwave discharge reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3024793B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3095614B2 (en) * | 1993-04-30 | 2000-10-10 | 株式会社東芝 | Plasma processing apparatus and plasma processing method used when performing plasma processing on an object to be processed such as a semiconductor wafer |
-
1990
- 1990-11-26 JP JP2321906A patent/JP3024793B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04191380A (en) | 1992-07-09 |
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