JP2970085B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device.

[0002]

2. Description of the Related Art In a conventional semiconductor device, a semiconductor element is mounted on a stem or a lead frame, and external connection is made by a wire bonding method, a tape automated bonding method, a flip chip method, or the like. Further, as shown in FIG. 4, the micro pins 3 are directly attached to the semiconductor element 1 with the gold-tin eutectic alloy 10 or the like on the electrode pad 7 of the semiconductor element 1 and mounted on the multilayer wiring board 11 with the solder 9 (for example, Japanese Patent Application No. 63-279789).

[0003]

In this conventional semiconductor device, if the electrode pad pitch becomes narrow in the wire bonding method, a capillary hits an adjacent wire, which is not suitable for miniaturization of the semiconductor device. In the method in which the bumps formed on the chip and the mounting board are attached by soldering as described above, the thermal expansion coefficients of the semiconductor element and the mounting board are different, so that a stress is applied to the solder connection portion due to a temperature change, and a connection failure due to breakage or the like occurs. Resulting in.

As an improvement, as shown in FIG. 4, a gold-tin eutectic alloy is formed on an electrode pad of a semiconductor element.
There is also a method of forming micro pins, but in this method,
Align the micro pins on the electrode pads of the semiconductor element,
Joining is very difficult, and since it is necessary to join one pin at a time, it takes a very long time. Furthermore, since the semiconductor device is mounted by itself, there is a problem that the semiconductor device is weak against external force and is easily broken.

[0005]

According to the present invention, there is provided a semiconductor device comprising:
With the circuit formation surface of the semiconductor element facing down, the lower surface has a substrate through which micropins arranged in the same arrangement as the electrode pads of the semiconductor element penetrate, and from the upper surface of the semiconductor element, affixed with a material having a high elastic modulus. The cap is covered so that pressure is applied to the semiconductor element. Thereby, the micropin and the electrode pad of the semiconductor element are electrically connected, and the micropin becomes an external connection terminal.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a semiconductor device according to one embodiment of the present invention. The substrate 2 is made of an inorganic material such as AlN, and the micro pins 3 arranged in the same arrangement as the electrode pads 7 of the semiconductor element 1 penetrate there. Pitch is 120-180
μm, the pin diameter was 60 to 110 μm, and the material used was a Cu-based material having good thermal conductivity and a relatively low elastic modulus. Also, so that the electrode pad 7 and the micro pin 3 do not shift,
The gap between the outer diameter dimension of the semiconductor element 1 and the recess dimension of the substrate 2 was made almost zero. The cap 5 is also made of an inorganic material like the substrate 2, and the high elastic material 4 is attached to the inner surface of the cap 3. In this case, a polyimide film that can withstand the temperature at the time of sealing was used as the high elastic material 4. The semiconductor element 1 has 2 to 20
A pressure of 0 kgf / mm @ 2 is applied, and sealing is performed with a brazing material 6 such as low melting point glass.

FIG. 3 is an example showing the upper surface of the high elastic material 4. As shown in the figure, the inside is hollowed out so that pressure is applied only to the portion where the electrode pad 7 and the micropin 3 are in contact with each other, so that a low pressure is required and no force is applied to the center of the semiconductor element. Cracks and the like can be prevented. Since the sealing structure of the present embodiment is a closed type, there is no invasion of water from the outside and the reliability such as moisture resistance is good.

FIG. 2 is a longitudinal sectional view of a semiconductor device according to a second embodiment of the present invention. The base 2 of this embodiment is made of an organic material such as a glass cloth epoxy laminate, and is provided with a concave portion by counterbore. The micro pins 3 are arranged in through holes that have been opened in advance, and are fixed with solder or the like.
The cap 5 is made of PPS (polyphenylene sulfide)
Use molded products of engineering plastics. A high elastic material 4 such as silicon rubber is attached to the inner surface. The cap 5 is provided with a claw 5a, and is mechanically attached to the base 2. The semiconductor element 1 is provided with a passivation film 8 such as a polyimide resin film for insulating and protecting portions other than the electrode pad portions. This embodiment can be made inexpensively and lightweight.

[0009]

As described above, the present invention has a substrate on which a circuit forming surface of a semiconductor element is directed downward, and the electrode pads of the semiconductor element and the micro pins arranged in the same arrangement penetrate the lower surface side. Then, the micro pin and the electrode pad of the semiconductor element are electrically connected from the top of the semiconductor element with a cap to which a material with a high elastic modulus is attached in a state where pressure is applied to the semiconductor element. As a result, a semiconductor device which is strong against external influences can be obtained.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a first embodiment of the present invention.

FIG. 2 is a longitudinal sectional view of a second embodiment of the present invention.

FIG. 3 is a plan view of a high elastic material 4;

FIG. 4 is a longitudinal sectional view of a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Substrate 3 Micro pin 4 High elastic material 5 Cap 6 Low material 7 Electrode pad 8 Passivation film 9 Solder 10 Gold-tin eutectic alloy 11 Multilayer wiring board

Claims (2)

(57) [Claims] 1. A semiconductor device comprising: a semiconductor element having a circuit forming surface facing downward; a substrate on which micro pins having the same arrangement as electrode pads of the semiconductor element are arranged on a lower surface of the semiconductor element; A semiconductor device in which a cap is placed on the semiconductor element so as to apply pressure to the upper surface and fixed to the substrate, and an electrode pad of the semiconductor element and the micropin are in contact with and electrically connected to each other;
The surface of the cap in contact with the upper surface of the semiconductor element is
An electrode material of the semiconductor element.
The cap contacts only the top surface where the pads are
Wherein a pressure is applied to the semiconductor element . 2. The circuit formation surface of a semiconductor device is directed downward.
Placed on the lower surface of the semiconductor element,
Arrange the board on which the micro pins of the same arrangement as the pole pads are standing.
And place the cap so that pressure is applied to the upper surface of the semiconductor element.
The semiconductor chip is fixed to the substrate by covering the semiconductor element.
When the electrode pad of the conductive element comes in contact with the micropin,
An electrically connected semiconductor device, wherein the cap is
Between the semiconductor element and the semiconductor element.
An elastic body that contacts only the upper surface where the
Wherein a that it has.