JP2967284B2 - Image forming apparatus and electron-emitting device array - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image forming apparatus including, as a multi-electron beam source, an array of electron-emitting devices formed by arranging a large number of electron-emitting devices on a substrate, and the electron-emitting device. It relates to an element row.

[Prior art] Conventionally, as an element which can obtain electron emission with a simple structure, for example, MIElinson
And the like are known. [Radio Engineering Electron Phys., Vol. 10, pp. 1290-1296,
1965] Examples of this type of surface conduction electron-emitting device include a device using a SnO ₂ (Sb) thin film developed by Elinson et al., And a device using an Au thin film [G. Ditmer “Sin Solid Films” (G. Dittmer: “Thin Solid Film
s "), 9, 317, (1972)], using ITO thin film [M. Hartwell and CGFonstad:" IEEE Tran "
s. ED Gonf. "p. 519, (1975)], based on a carbon thin film [Hisashi Araki et al .:" Vacuum ", Vol. 26, No. 1, p. 22, p.
3 years)].

With the rapid progress of film formation technology and photolithography technology, it is becoming possible to form a large number of surface conduction electron-emitting devices on a substrate. Is expected to be applied.

When these surface conduction electron-emitting devices are applied to an image forming apparatus, generally, a large number of surface conduction electron-emitting devices are arrayed on a substrate, and a thin film or a thick film is formed between the surface conduction electron-emitting devices. Wiring electrically with the electrodes of the membrane,
Although used as a multi-electron beam source, a phenomenon occurs in which a voltage applied to each surface conduction electron-emitting device varies due to a voltage drop caused by wiring resistance. As a result, the current amount of the electron beam emitted from each of the surface conduction electron-emitting devices varies, causing a problem that the formed image has uneven brightness (density).

5A and 5B are diagrams for explaining this problem in more detail. FIG. 5A is an equivalent circuit diagram including a surface conduction electron-emitting device, a wiring resistance, and a power supply, and FIG. FIG. 4 is a diagram showing potentials of a positive electrode and a negative electrode of the device, and FIG. 4C is a diagram showing a voltage applied between the positive and negative electrodes of each surface conduction electron-emitting device. Figure 5 (a) is shows a circuit which connects the parallel-connected N-number of electron-emitting devices D ₁ to D _N and a power supply V _E, the positive electrode and the surface conduction electron-emitting devices D ₁ of the power source a positive electrode, also is obtained by connecting the negative electrode of the negative electrode and the surface conduction electron-emitting devices D _N of the power supply. Further, a common wiring connecting the surface conduction electron-emitting devices in parallel has a resistance value of r between adjacent surface conduction electron-emitting devices as shown in FIG. (In an image forming apparatus, pixels serving as electron beam targets are usually arranged at equal pitches. Therefore, surface conduction electron-emitting devices are also arranged at equal intervals in space, and the wiring connecting them has a width of As long as the film thickness and film thickness do not vary in production, the surface conduction electron-emitting devices have the same resistance value.) In addition, all the surface conduction electron-emitting devices D _{1 to DN} have substantially the same resistance Rd. Shall have.

FIG. 5 (b) shows the potentials of the positive electrode and the negative electrode of each surface conduction electron-emitting device in the circuit diagram of FIG. 5 (a). In the figure, the horizontal axis indicates the element number of D ₁ to D _N,
The vertical axis indicates the potential. The symbol ● indicates the positive electrode potential of each surface conduction electron-emitting device, and the symbol Δ indicates the negative electrode potential. In order to make it easier to see the tendency of the potential distribution, the solid symbols ● are used for convenience.

As apparent from the figure, the voltage drop due to the wiring resistance r is not necessarily occur uniformly in the case of the positive electrode side, a steep closer to the surface conduction electron-emitting devices D _1, the negative electrode side in the reverse The closer to the surface conduction electron-emitting device _DN , the steeper. This is a positive electrode side closer to D _1, large current flowing through the wiring resistance r is also the negative electrode side closer to D _N, is because a large current flows.

FIG. 5 (c) plots the voltage applied between the positive and negative electrodes of each surface conduction electron-emitting device.
The horizontal axis of the figure indicates the surface conduction electron-emitting device numbers of D _{1 to DN} , and the vertical axis indicates the applied voltage, respectively, as in FIG. 5 (b). Are connected by a solid line.

As it is apparent from this figure, when the circuit as shown in FIG. 5 (a), the surface conduction electron-emitting elements at both ends (D ₁ and
A larger voltage is applied closer to D _N ), and the applied voltage becomes smaller in the surface conduction electron-emitting device near the center.

Therefore, the electron beam emitted from each surface conduction electron-emitting device has a larger beam current as the surface conduction electron-emitting devices at both ends thereof, which is extremely inconvenient when applied to an image display device. (For example, the density of the image near the both ends is high and the density near the center is low.) As described above, the degree of variation of the applied voltage for each surface conduction electron-emitting device depends on the parallel connection. There is a tendency that the larger the number of the surface conduction electron-emitting devices to be used, the more remarkable.

In order to realize a large-capacity display device having a large number of pixels (that is, requiring a large number of surface conduction electron-emitting devices), as shown in FIG. A method has been used in which a plurality of groups are divided and a plurality of groups connected in parallel are connected in series. In the case of FIG. 6, the surface conduction electron-emitting devices are divided into m groups, and n surface conduction electron-emitting devices are connected in parallel for each group.
(Where N is the total number of surface conduction electron-emitting devices, N = m
× n. According to this method, the variation in the voltage applied to each surface conduction electron-emitting device is smaller than that in the case where all the N surface conduction electron-emitting devices shown in FIG. 5 are connected in parallel. It can be significantly reduced. At this time, as n decreases, the variation in the voltage applied to the surface conduction electron-emitting device can be reduced. However, when the number m of stages connected in series increases, the power supply voltage must be increased. Therefore,
Conventionally, an appropriate n is selected in consideration of the applied voltage variation of the surface conduction electron-emitting device and the load on the power supply, and a parallel and series combination circuit is configured.

A row of surface conduction electron-emitting devices spatially aligned
As described above, a method as shown in FIG. 7 is used to electrically connect the parallel and series combinations.
FIG. 7 shows a row of surface conduction electron-emitting devices arranged on an electrically insulating substrate such as glass.
It is a plan view for showing an example of connection using an electric good conductor such as a metal. In the drawing, reference numeral 101 denotes a surface conduction electron-emitting device, and a part 102 (a part painted black) is 3 shows a surface conduction electron-emitting portion. Also 103
The (hatched portion) is a wiring pattern formed of a thin or thick metal film.

In the figure, in order to simplify the drawing, for the sake of convenience, the total number of surface conduction electron-emitting devices N = 15, the number of groups m = 5, and the number of surface conduction electron-emitting devices n = 5 Although the case of 3 is shown, the portion surrounded by the dotted line indicates one group. In practice, it is not possible to arrange numbers such as N = 500, m = 5, and n = 100. Easy.

For example, a flat panel display device as shown in FIG. 8 has been tried using the above-mentioned surface conduction electron-emitting device array as a multi-electron beam source.

FIG. 8 shows the structure of the display panel, in which VC is a vacuum vessel made of glass, and FP, which is a part of the vacuum vessel, shows a face plate on the display surface side. A transparent electrode made of, for example, ITO is formed on the inner surface of the face plate FP, and red, green, and blue phosphors are separately applied in a mosaic pattern on the inner side thereof. Processing has been applied. (The transparent electrode, the phosphor, and the metal back are not shown.) The transparent electrode is electrically connected to the outside of the vacuum vessel through a terminal EV to apply an acceleration voltage.

Further, S is a glass substrate fixed to the bottom surface of the vacuum vessel VC, and on its upper surface, surface conduction electron-emitting devices are arranged in N × 1 rows. Surface conduction electron-emitting devices are connected by the method of the FIG. 7 for each column, the wiring of each column, terminal D _p1 to D _pl and terminal D _m1 ~m _ml
Is electrically connected to the outside of the vacuum vessel. That is, in the present apparatus, the surface conduction electron-emitting device rows formed by the connection method shown in FIG.
(The number of surface conduction electron-emitting devices per row is N.) A stripe-shaped grid electrode GR is provided between the substrate S and the face plate EP. N grid electrodes GR are provided orthogonal to the surface conduction electron-emitting device row, and each electrode is provided with a hole Gh for transmitting an electron beam. The holes Gh may be provided one by one corresponding to each surface conduction electron-emitting device as in the example of FIG. Alternatively, many fine holes may be provided in a mesh shape. Each grid electrode is electrically connected to the vacuum chamber outside the terminal G ₁ ~G _N.

In this panel, one row of surface conduction electron-emitting devices and N
An XY matrix is composed of the grid electrode rows. Controlling the irradiation of each electron beam to the phosphor by simultaneously applying a modulation signal for one line of an image to the grid electrode row in synchronization with the sequential driving (scanning) of the row of surface conduction electron-emitting elements Then, the image is displayed line by line.

[Problems to be solved by the invention] However, in the above-mentioned conventional flat panel display device,
There has been a problem that the position of the light emitting point (pixel) on the phosphor screen is shifted from the originally intended position.

That is, in the display panel shown in FIG. 8, pixels on the same scanning line must originally be aligned in parallel with the x-axis. However, in the conventional panel, there is a phenomenon that the light emitting points on the same scanning line are not aligned in a straight line and are shifted in the y direction as shown in FIG.

The reason why the light emitting points are not aligned as described above will be described.

FIG. 10 schematically shows a state in which a power supply is connected to the conventional example of FIG. 7, and the surface-conduction type electron-emitting devices connected in parallel are arranged in the order from the power supply in the order of convenience. The first group, the second group, the third group,... Power, the case of supplying a voltage of 5 × V _E [V], neglecting the voltage drop due to the wiring resistance, the potential of the wiring electrodes E1 is, 5 × V _E
[V], the potential of the wiring electrode E2 is 4 × V _E [V] ... the wiring electrode E6
Is 0 [V], and a voltage of V _E [V] is applied to any surface conduction electron-emitting device. At this time, with respect to the first group of surface conduction electron-emitting devices, the wiring electrode E1 is a positive electrode,
The wiring electrode E2 acts as a negative electrode, but for the second group of surface conduction electron-emitting devices, the wiring electrode E2 is a positive electrode and the wiring electrode E2 is a negative electrode.
E3 acts as a negative electrode. Looking similarly, in the odd group of surface conduction electron-emitting devices, the electrode located in the positive direction of the y-axis acts as a positive electrode, and conversely, in the even group of surface conduction electron-emitting devices. Indicates that the electrode located in the negative direction of the y-axis functions as a positive electrode.

By the way, in the case of the surface conduction electron-emitting device, it has been found that the flying direction of the emitted electron beam is slightly different depending on the direction of the applied voltage. FIG. 11 shows this phenomenon, and shows a part of a cross section of the conventional display device of FIG. 8 taken along a plane parallel to the y-axis and perpendicular to the substrate S. 103A and 103B are wiring electrodes provided for applying a voltage to the illustrated surface conduction electron-emitting device, and which of the surface conduction electron-emitting devices acts as a positive electrode or a negative electrode depends on whether the surface conduction electron-emitting device is in an odd group. It depends on whether they belong or belong to an even group.

If the surface conduction electron-emitting device belongs to an odd group, the wiring electrode 103A functions as a positive electrode and 103B functions as a negative electrode, and V _E [V] is applied to both ends of the surface conduction electron-emitting device.
In this case, the electron beam emitted from the electron-emitting portion 102 flies in a direction slightly closer to the electrode 103A than the normal direction to the substrate surface, as indicated by a solid line in the drawing, It collides with the fluorescent surface (inner surface) of the face plate FP. The electron beam fluctuates from the normal direction in this manner because a voltage applied to the wiring electrodes 103A and 103B generates an electric field in the y-axis negative direction in the space above the electron-emitting portion 102. it is conceivable that. (In addition, grid electrode GR,
When the beam cut-off potential is applied, the electron beam is cut off and does not reach the face plate FP. However, since the electron beam has no direct relation to the shift of the light emitting point, the detailed description is omitted. On the other hand, when the surface conduction type electron-emitting device belongs to the even-numbered group, an electric field acts in the opposite direction (the positive direction of the y-axis) to the case of the odd-numbered group, so that the electron is emitted from the electron emitting portion 102. The electron beam flies slightly closer to the electrode 103B than the normal direction and collides with the phosphor screen, as indicated by the dotted line in the figure.

As a result, the light emitting points of the odd group of surface conduction electron-emitting devices and the light emission points of the even group of surface conduction electron-emitting devices are shifted by the amount of deviation of the electron beam from the normal direction. The light emission point sequence shown in FIG. As a result, the display image and the image quality are degraded, which hinders faithful image reproduction.

Means and Action for Solving the Problems The present invention has been made in view of the above problems, and an image forming apparatus and an electron emitting element array capable of preventing displacement of a light emitting point and realizing faithful image reproduction. The following measures are taken.

That is, the first aspect of the present invention is that a plurality of electron-emitting devices having an electron-emitting portion to which a voltage is applied via a pair of electrodes between a pair of electrodes arranged in parallel along the substrate surface are provided in each of the electron-emitting portions. Has a plurality of parallel connection groups connected in parallel so that the directions of the currents flowing through the plurality of parallel connection groups are connected in series. A row of electron-emitting devices arranged in directions different from each other by 180 degrees, a target that emits light by irradiation with an electron beam emitted from the electron-emitting device, and a plurality of rows arranged in an XY matrix with the row of electron-emitting devices. And a modulation grid electrode, wherein a plurality of electron-emitting portions having the same flowing current direction are arranged on the same straight line orthogonal to the current direction, and So that all of the emitted electron beams are aligned on the target,
The present invention relates to an image forming apparatus in which electron-emitting portions having flowing current directions different from each other by 180 degrees are arranged so as to be shifted from each other in the current direction.

In the image forming apparatus of the present invention, the flowing current directions are 18
When the distance along the current direction between the electron emitting portions different from each other by 0 degrees is d [m], it is preferable that the relationship of L ≦ d ≦ 2L is satisfied.

However, H [m]: distance V _E the substrate and the plane target [V]: driving voltage V _a applied to the electron-emitting device [V]: accelerating voltage The image of the present invention is applied to the target In the forming apparatus, it is preferable that all of the electron-emitting portions of the plurality of electron-emitting devices are arranged at equal intervals along a direction orthogonal to a direction of a current flowing through the electron-emitting portions.

Further, the image forming apparatus of the present invention preferably has a plurality of the electron-emitting device rows.

A second aspect of the present invention is that a plurality of electron-emitting devices having an electron-emitting portion to which a voltage is applied via a pair of electrodes between a pair of electrodes arranged in parallel along the substrate surface are provided in each of the electron-emitting portions. Has a plurality of parallel connection groups connected in parallel so that the directions of the currents flowing through the plurality of parallel connection groups are connected in series. In a row of electron-emitting devices arranged so that directions are different from each other by 180 degrees, a plurality of electron-emitting portions having the same flowing current direction are arranged on the same straight line orthogonal to the current direction, and The directions of the flowing currents are 180 ° so that all of the electron beams emitted from the emission elements are aligned on a target placed opposite to the substrate.
The present invention relates to an electron-emitting device row, wherein electron-emitting portions having different degrees are arranged so as to be shifted from each other in the current direction.

According to the present invention, the shift of the light emitting point sequence as described in FIG. 9 can be suppressed to a visually inconspicuous range.

EXAMPLES Hereinafter, specific examples of the present invention will be described.

Example 1 FIG. 1 shows the structure of a display panel, in which VC is a vacuum vessel made of glass, and FP, which is a part thereof, shows a face plate on the display surface side. Transparent electrodes made of, for example, ITO are formed on the inner surface of the face plate FP, and red, green, and blue phosphors are separately painted on the inner surface in a mosaic pattern. Processing has been applied. (The transparent electrode, the phosphor, and the metal back are not shown.) The transparent electrode is electrically connected to the outside of the vacuum vessel through a terminal EV to apply an acceleration voltage.

Further, S is a glass substrate fixed to the bottom surface of the vacuum vessel VC, and on its upper surface, surface conduction electron-emitting devices are arranged in N × 1 rows.

The arrangement of the surface conduction electron-emitting devices in each column will be described later with reference to FIGS. 2 and 3, but the wiring in each column is connected to the terminal D _p1.
~D are electrically connected to the vacuum vessel outside by _pl and terminal D _m1 ~D _ml. That is, in this apparatus, a second
A row of electron-emitting devices is formed on the substrate S over the l rows by the connection method shown in the figure. (The number of surface conduction electron-emitting devices per row is N.) A stripe-shaped grid electrode GR is provided between the substrate S and the face plate FP. N grid electrodes GR are provided orthogonal to the electron-emitting device row, and each electrode is provided with a hole Gh for transmitting an electron beam. The holes Gh may be provided one by one corresponding to each surface conduction electron-emitting device as in the example of FIG.
Alternatively, many fine holes may be provided in a mesh shape. Each grid electrode GR is electrically connected to the vacuum chamber outside the terminal G ₁ ~G _N.

In this panel, one row of surface conduction electron-emitting devices and N
An XY matrix is composed of the grid electrode rows. By simultaneously applying a modulation signal for one line of an image to a grid electrode line in synchronization with sequentially driving (scanning) the electron emission element lines one by one, the irradiation of each electron beam to the phosphor is controlled, and the image is formed. Are displayed line by line.

FIG. 2 is a plan view for explaining the arrangement of the surface conduction electron-emitting devices provided on the substrate S in more detail, and shows a part of the electron-emitting device array cut away. The electron-emitting device rows are arranged in the scanning line direction (X direction) of the image, and the plurality of electron-emitting devices 101 are connected in parallel so that the direction of current flowing through each electron-emitting portion 102 is the same. A plurality of parallel connection groups are connected in series. In FIG. 2, one parallel connection group includes three electron-emitting devices.

Adjacent parallel connection groups are arranged so that the directions of currents flowing through the electron-emitting portions are different from each other by 180 degrees, and the plurality of electron-emitting portions having the same flowing current direction are:
They are arranged on the same straight line orthogonal to the current direction.
More specifically, when the driving voltage is applied, the electron-emitting portion in which a current flows in the negative Y direction is disposed on a straight line 1 _1, the electron emission portion in which a current flows in the Y positive direction is disposed on the straight line 1 _2. Straight line l ₁
And the spacing d of the straight line l _2, later together with the description of FIG. 3 shows a specific numerical values.

In FIGS. 1 and 2, for ease of illustration,
Although the three elements constitute one group, in the display panel actually produced by the inventor, five groups of 100 elements are formed, and 500 elements (N = 500) are arranged in one row. . 400 element rows (l = 400) are arranged, and 500 × 4
A display panel having 00 pixels was used.

Further, the surface conduction electron-emitting device used in this embodiment is
In the description so far, this is schematically shown, but a more specific form is enlarged and shown in the ellipse in FIG. 101. The surface conduction electron-emitting device was prepared according to the following procedure.
That is, first, a thin film 104 of about 1000 mm thick made of Au is formed on a substrate S using 7059 glass manufactured by Corning.
Is formed by photolithography etching.
As shown, the thin film 104 has a narrow and narrow shape at the center, in order to easily perform a forming process described later. Next, a thin film having a thickness of about 1 μm made of Ni is laminated to form the wiring electrode 103. At this time, electrical conduction is achieved by partially laminating the thin film pattern 104 on the thin film pattern 104. Keep it good.

Next, the electron emission portion 102 is formed by a conventionally known forming process. That is, through the electrode 103, the thin film 10
A voltage is applied to both ends of 4, and the thin film is electrically heated. At this time, since the thin and narrow portion of the thin film has higher electric resistance than both ends, this portion is heated intensively, and as a result, a part of the thin film is transformed into a discontinuous film, and the electron emitting portion 102 is formed. You.

The surface conduction electron-emitting device used for the display panel shown in FIG. 1 was prepared by the above procedure. Next, the positional relationship between the components of the panel will be described with reference to FIG.
FIG. 3 shows a part of a cross section of the display panel of FIG. 1 cut along a plane parallel to the Y axis and perpendicular to the surface of the substrate S.
(For ease of illustration, the scale is not uniform.) The substrate S on which the surface conduction electron-emitting devices are provided is positioned at h ₀ = 0.5 mm from the bottom surface of the vacuum vessel VC by a fixing means (not shown). Fixed. However, the distance h ₀ between the substrate S and the bottom of the container is not directly related to the trajectory of the electron beam, so that h ₀ may not necessarily be 0.5 mm.

Further, on the substrate S, the second view as described in (plan view), a plurality of electron-emitting devices belonging to each parallel connection groups two on parallel lines l ₁ or l ₂ with a spacing of d Are formed alternately, and d will be described later.

Note that Te is at in Figure 3, electron-emitting portion 102 is cross-section of the surface conduction electron-emitting devices of the group are arranged on the straight line l ₂ is shown.

A grid electrode GR is provided at a position of h ₁ = 0.2 mm from the substrate S, and the grid electrode GR is provided with a hole Gh for passing an electron beam.

In addition, the grid electrode GR and the phosphor screen (face plate)
The distance from the lower surface of the FP was set to h ₂ = 5 mm. When performing a display operation, the electron-emitting device rows are sequentially driven, and in synchronization with this, a modulation voltage is applied to the grid electrode GR. In order to drive the surface conduction electron-emitting devices, a voltage of 12 [V] was applied between the positive and negative electrodes of each surface conduction electron-emitting device. That is,
In the panel of this embodiment, five groups of 100 elements are connected in series to form one line.
12 × between D _p and D _m 5 = 60 [V] the voltage drop 1 [V] due to the wiring resistance in addition, was applied 61 [V]. In this case, although the negative electrode potential of the surface conduction electron-emitting device is different for each group, expressed this with V _m, the modulation voltage applied to the modulation grid electrodes GR, when emit light is, V _m +30 [V] In the case of non-emission (cut off the electron beam), V _m −10
[V]. (I.e., per group, the value of V _m is different, the modulation voltage varies.) Further, the light-emitting surface of the face plate FP lower surface, and applies an accelerating voltage of 2.0 K [V].

The inventors made prototypes of the panel having the above-described basic configuration while changing the distance d variously, and evaluated the shift of the light emitting point.

As a result, by setting d [mm] to be in the range of 0.81 ≦ d ≦ 1.6, a panel was successfully produced in which the shift of the light emitting point was hardly noticeable visually.

The above embodiment is a system of H ≒ 5.2 mm, V _a = 2.0 KV, V _E = 12 V. However, even in a system having different three parameters, By arranging the electron-emitting portions whose current directions flowing with a distance d in the range of 180 ° are different from each other, it is possible to visually minimize the shift of the light-emitting point as compared with the case where the present invention is not implemented. This has the effect of significantly improving the display quality of characters or figures.

Second Embodiment FIG. 4 is a plan view showing the arrangement of surface conduction electron-emitting devices according to another embodiment, and is a plan view corresponding to FIG. 2 of the first embodiment. As shown in FIG.
Reference numeral 103 denotes a non-snaking linear shape, in which only the electron-emitting portions 102 of the surface-conduction type electron-emitting device are arranged at intervals of d for each group.

The manufacturing method and the shape of the surface conduction electron-emitting device of this embodiment are different from those described with reference to FIG. 2, and the shape is enlarged to an ellipse 105 in FIG.

The surface conduction electron-emitting device is manufactured by the following procedure. That is, first, a thin film 106 having a thickness of about 5000 と す る made of Ni or Cr is formed on the substrate S by vacuum film formation and photolithography etching. The thin film patterns are provided facing each other at an interval of W = 2 μm.
The portion sandwiched between the thin films 106 is referred to as a gap 107.

The gap 107 is a region that becomes an electron emission portion when the surface conduction electron-emitting device is completed, and is therefore arranged with a distance of d in the Y direction for each group.

Next, a wiring electrode 103 having a thickness of about 1 μm and made of Ni is formed. At this time, in order to improve the electrical connection with the thin film 106, the wiring electrode 103 partially covers the thin film 106.

Further, ultra-fine particles of palladium are attached to the gap 107. That is, for example, a palladium fine particle dispersion liquid (trade name: CCP4230) manufactured by Okuno Pharmaceutical Co., Ltd. is spin-coated using a spinner, and then dried at a temperature of about 140 ° C. At this time, fine particles may adhere to portions other than the gap 107, and application may be performed by a method other than spin coating (for example, dipping or spraying).

Next, a voltage is applied to the wiring electrode 103, and aging is performed until the electron emission characteristics are stabilized.

Through the above procedure, the electron-emitting device array shown in FIG. 4 was manufactured.
In this embodiment, each parameter of h ₀ , h ₁ , h ₂ is h ₀ = 0.5 m
m, h ₁ = 0.2 mm and h ₂ = 3.8 mm.

In the case of the surface-conduction electron-emitting device used in this embodiment, the driving voltage is preferably 16 [V]. Therefore, when 5 groups are connected in series per row, 80 [V] is applied to the panel. Applied. Also, the acceleration voltage V _a = 1600 V applied to the phosphor
The grid applied voltage is V _m +25 [V] when on,
At the time of off, it was set to _Vm- 5 [V].

In this embodiment, by setting the distance d [mm] in the range of 0.8 ≦ d ≦ 1.6, it was possible to obtain a suitable display panel in which the shift of the light emitting point is visually inconspicuous.

[Effects of the Invention] As described above, according to the present invention, a plurality of electron-emitting portions having the same flowing current direction are arranged on the same straight line orthogonal to the current direction, and the flowing current direction is different. By disposing the electron emitting portions that are different from each other by 180 degrees in the current direction by a predetermined amount, the shift of the light emitting points due to the electron beams from all the electron emitting devices in the electron emitting device row is made almost invisible. Made it possible.

According to the present invention, the image quality of a flat panel display device using electron-emitting devices has been greatly improved, and the range of use for industrial or home use has been greatly expanded.

[Brief description of the drawings]

1 is an overall view of a display panel embodying the present invention, FIG. 2 is a view showing a method of arranging surface conduction electron-emitting devices of the present invention, FIG. 3 is a partial cross-sectional view of the display panel, and FIG. FIG. 5 is a diagram showing a device arrangement method according to a second embodiment of the present invention, FIG. 5 is a diagram for explaining variations in device applied voltage at the time of parallel wiring, FIG. 6 is a diagram showing parallel / series wiring, and FIG. FIG. 8 is an overall view of a conventional display panel, and FIG.
FIG. 10 is a diagram showing a conventional problem (position shift of a light emitting point). FIG. 10 is a diagram for explaining a direction of an element applied voltage in a conventional system. FIG. 11 is a panel cross section for showing a flight direction of an electron beam. FIG. 102: electron emission unit, 103: wiring electrode S: substrate, VC: vacuum vessel GR: grid electrode, Gh: hole FP: face plate

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Ichiro Nomura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Tetsuya Kaneko 3-30-2, Shimomaruko, Ota-ku, Tokyo Canon (56) References JP-A-51-135460 (JP, A) JP-A-62-183353 (JP, U) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01J 1/30 H01J 31/12

Claims (5)

(57) [Claims] An electric current flowing through a plurality of electron-emitting devices each having an electron-emitting portion to which a voltage is applied between a pair of electrodes arranged in parallel along a substrate surface through the pair of electrodes. It has a plurality of parallel connection groups connected in parallel so that the directions are the same, the plurality of parallel connection groups are connected in series, and the adjacent parallel connection groups have the directions of currents flowing through the electron emission portion mutually. A row of electron-emitting devices arranged so as to differ by 180 degrees, a target that emits light by irradiation of an electron beam emitted from the electron-emitting device, and a plurality of modulation grids arranged in an XY matrix with the row of electron-emitting devices And a plurality of electron-emitting portions having the same flowing current direction are arranged on the same straight line orthogonal to the current direction, and the plurality of electron-emitting portions are arranged in a direction perpendicular to the current direction. The electron emission portions having different flowing current directions by 180 degrees from each other so that all of the daughter beams are aligned on the target,
An image forming apparatus, wherein the image forming apparatus is displaced in the current direction. 2. The relationship according to claim 1, wherein the relationship of L ≦ d ≦ 2L is satisfied when the distance along the current direction between the electron emitting portions whose flowing current directions are different from each other by 180 degrees is d [m]. Image forming device. However, H [m]: distance V _E the substrate and the plane target [V]: wherein the electron-emitting device to the driving voltage applied thereto V _a [V]: accelerating voltage applied to the target 3. The electron-emitting device according to claim 1, wherein all of the electron-emitting portions of the plurality of electron-emitting devices are arranged at equal intervals along a direction orthogonal to a direction of a current flowing through the electron-emitting portions. Image forming apparatus. 4. An image forming apparatus according to claim 1, wherein said image forming apparatus has a plurality of said electron-emitting device rows. 5. A current flowing through a plurality of electron-emitting devices each having an electron-emitting portion to which a voltage is applied between a pair of electrodes arranged in parallel along the substrate surface via the pair of electrodes. It has a plurality of parallel connection groups connected in parallel so that the directions are the same, the plurality of parallel connection groups are connected in series, and the adjacent parallel connection groups have the directions of currents flowing through the electron emission portion mutually. In the electron-emitting device array arranged so as to be different by 180 degrees, a plurality of electron-emitting portions having the same flowing current direction are arranged on the same straight line orthogonal to the current direction, and Electron emitting portions having a flowing current direction different from each other by 180 degrees are arranged so as to be shifted from each other in the current direction so that all of the emitted electron beams are aligned on a target arranged opposite to the substrate. Special The electron-emitting element array to be.