JP2958449B2 - Method for producing cubic boron nitride particles - Google Patents
Method for producing cubic boron nitride particlesInfo
- Publication number
- JP2958449B2 JP2958449B2 JP13927497A JP13927497A JP2958449B2 JP 2958449 B2 JP2958449 B2 JP 2958449B2 JP 13927497 A JP13927497 A JP 13927497A JP 13927497 A JP13927497 A JP 13927497A JP 2958449 B2 JP2958449 B2 JP 2958449B2
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- cubic boron
- subjected
- nitride particles
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Ceramic Products (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本願発明は、触媒を使用する
ことなく従来より低い温度高圧下の条件において、六方
晶窒化ほう素(以下、h-BNという)から立方晶窒化ほ
う素(以下、c-BNという)の粒子を製造する方法に
関する。BACKGROUND OF THE INVENTION The present invention relates to a method for converting hexagonal boron nitride (hereinafter referred to as h-BN) to cubic boron nitride (hereinafter referred to as c -BN).
【0002】[0002]
【従来技術】従来、c-BNはダイヤモンドに次いで硬
く、鉄と反応しない、熱伝導性が高い等の特性を持つこ
とから、鉄鋼材料、製品の切断および研磨のために広く
用いられている。c-BNを製造する方法としては、h-
BNを原料として触媒を使用してc-BNに結晶を変換
することによって得られていたが、この方法によって得
られたc-BNは、触媒を用いているため粒内に触媒成
分が残留し、その結果c-BNの特性が損なわれること
があるという不都合があった。従って、触媒を使用する
ことなく直接h-BNよりc-BNへ構造変換する方法
(以下、この方法を直接法という)が望まれているが、
この場合は、例えば7.7GPaで1600℃以上とい
う非常に厳しい条件が必要であり、また得られたものは
焼結体であり、粒子状のものを得ることは困難であっ
た。2. Description of the Related Art Conventionally, c-BN is harder than diamond, does not react with iron, has high thermal conductivity, and is widely used for cutting and polishing steel materials and products. As a method for producing c-BN, h-
Although it has been obtained by converting crystals into c-BN using BN as a raw material and using a catalyst, c-BN obtained by this method has a catalyst component remaining in the grains because a catalyst is used. As a result, there is a disadvantage that the characteristics of c-BN may be impaired. Therefore, a method for directly converting the structure of h-BN to c-BN without using a catalyst (hereinafter, this method is referred to as a direct method) is desired.
In this case, very strict conditions of, for example, 1600 ° C. or more at 7.7 GPa were required, and the obtained product was a sintered body, and it was difficult to obtain a particulate material.
【0003】[0003]
【発明が解決しようとする課題】本発明者等は、直接法
によってh−BNを出発原料とし、従来より緩和な条件
によりc−BNの粒子を得る方法について検討した。先
ず、h-BNを圧力7.7GPa、温度1800℃で加
熱した試料を高分解能電子顕微鏡で観察したところ、h
-BNのマトリックス中に小さな結晶粒が生じたこと、
この結晶粒はウルツ鉱型窒化ほう素(以下、w-BNと
いう)およびc-BNより成ること、およびw-BN内に
は多くの欠陥が存在することを見出した。なお、上記の
加熱処理した試料の高分解能電子顕微鏡写真を図1とし
て示す。DISCLOSURE OF THE INVENTION The present inventors have studied a method for obtaining c-BN particles under a milder condition using h-BN as a starting material by a direct method. First, a sample obtained by heating h-BN at a pressure of 7.7 GPa and a temperature of 1800 ° C. was observed with a high-resolution electron microscope.
Small crystal grains formed in the matrix of -BN,
It has been found that these crystal grains are composed of wurtzite-type boron nitride (hereinafter referred to as w-BN) and c-BN, and that there are many defects in w-BN. A high-resolution electron micrograph of the sample subjected to the heat treatment is shown in FIG.
【0004】この現象について検討した結果、h-BNを
触媒無しに直接法によって処理すると、w-BNがc-B
Nに先だって形成されていることを示唆しているものと
理解されるので、w-BNの生成を促進することによ
り、c-BNが従来よりも容易に得られるであろうと考
えられた。As a result of studying this phenomenon, when h-BN is treated by a direct method without a catalyst, w-BN becomes c-B
Since it is understood that it is suggested to be formed prior to N, c-BN could be obtained more easily than before by promoting the production of w-BN.
【0005】そこで、出発原料であるh−BNに振動ミ
リングを施したところ、結晶粒は板面に平行に細かく分
割され、境界に多くの非晶質領域が発生すること、およ
び内部に多くの欠陥が生成することを見いだし、これを
6〜8GPa、1250〜1600℃の範囲で加熱した
ところc-BNの生成が著しく促進されることが判明し
た。本発明の目的は直接法により従来より緩和な条件に
よってh−BNよりc−BNの粒子を製造する方法を提
供することである。Therefore, when the starting material h-BN is subjected to vibration milling, the crystal grains are finely divided parallel to the plate surface, and many amorphous regions are generated at the boundary, and many Defects were found to form, and it was found that heating them in the range of 6-8 GPa and 1250-1600 ° C. significantly accelerated the formation of c-BN. An object of the present invention is to provide a method for producing c-BN particles from h-BN by a direct method under milder conditions than before.
【0006】[0006]
【課題を解決するための手段】本願発明の要旨は、六方
晶窒化ほう素原料粉に振動ミリングを施こし、得られた
微粉末を圧力6〜8GPa、温度1250℃〜1600
℃の温度範囲で加熱することを特徴とする立方晶窒化ほ
う素粒子を製造する方法である。即ち、本発明は六方晶
窒化ほう素より直接法によって立方晶窒化ほう素粒子を
製造するに当たり、原料粉である六方晶窒化ほう素に振
動ミリングを施こし、この機械的手段によってh-BN
内に多くの欠陥を導入した後、高圧下で加熱処理を施す
ことによって触媒無しでw-BMの生成を促進して従来
の条件より緩和な条件によってh−BNをc−BNに変
換するのである。The gist of the present invention is that a raw material powder of hexagonal boron nitride is subjected to vibration milling, and the obtained fine powder is subjected to a pressure of 6 to 8 GPa and a temperature of 1250 ° C. to 1600.
A method for producing cubic boron nitride particles, characterized by heating in a temperature range of ° C. That is, according to the present invention, when producing cubic boron nitride particles from hexagonal boron nitride by a direct method, vibration milling is applied to hexagonal boron nitride as a raw material powder, and the h-BN
After introducing a lot of defects into the inside, heat treatment under high pressure promotes the production of w-BM without a catalyst and converts h-BN to c-BN under conditions more relaxed than conventional conditions. is there.
【0007】[0007]
【発明の実施の形態】本発明について詳細に述べる。本
発明で使用する六方晶窒化ほう素原料粉としては、通常
の市販品である。また、振動ミリングとしては通常の市
販装置により行うものであり、この処理時間としては5
分程度以上であり、それ以下では所望の目的が達せられ
ない。振動ミリング処理によって微粉末内に多くの欠陥
が導入される。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail. As the hexagonal boron nitride raw material powder used in the present invention, an ordinary commercial product is used. Further, the vibration milling is performed by a normal commercially available apparatus, and the processing time is 5 minutes.
It is more than about a minute, and below it, the desired purpose cannot be achieved. The vibration milling process introduces many defects into the fine powder.
【0008】次に得られた微粉末を圧力6〜8GPa、
温度1250℃〜1600℃の温度範囲で加熱処理を施
す。この場合、圧力としては6GPa以上が必要で、こ
れ以下ではh−BNからc−BNへの変換が期待出来な
い。温度条件については、1250℃以下では効果が小
さい。好ましい温度としては1350℃である。この熱
処理時間としては15分程度である。Next, the obtained fine powder is subjected to a pressure of 6 to 8 GPa,
The heat treatment is performed in a temperature range of 1250 ° C. to 1600 ° C. In this case, a pressure of 6 GPa or more is required, and below this pressure, conversion from h-BN to c-BN cannot be expected. Regarding temperature conditions, the effect is small at 1250 ° C. or less. A preferred temperature is 1350 ° C. The heat treatment time is about 15 minutes.
【0009】[0009]
【実施例】次に実施例をもって更に具体的に本発明を説
明する。 実施例1 平均粒径10μm程度のh-BN粉末を振動ミルによって
約20分間ミリング処理を行ない、得られた粉末をチャ
ンバー中に入れ、7.7GPaの高圧下1250℃、1
350℃、1450℃及び1600℃の各温度で約15
分間保持後室温に冷却した。得られた粉末のX線粉末回
折チャートを測定した結果、図2a〜dのX線粉末回折
チャート(A)を得た。Next, the present invention will be described more specifically with reference to examples. Example 1 An h-BN powder having an average particle size of about 10 μm was subjected to a milling treatment by a vibration mill for about 20 minutes, and the obtained powder was placed in a chamber at 1250 ° C. under a high pressure of 7.7 GPa.
Approximately 15 at each of 350 ° C, 1450 ° C and 1600 ° C
After holding for minutes, the mixture was cooled to room temperature. As a result of measuring an X-ray powder diffraction chart of the obtained powder, X-ray powder diffraction charts (A) of FIGS. 2A to 2D were obtained.
【0010】比較例1 振動ミルを使用せず、その他の条件は実施例1と全く同
一条件下でh−BN粉末を熱処理を施し、得られた粉末
のX線粉末回折チャートを測定した結果、図3のX線粉
末回折チャート(B)を得た。Comparative Example 1 The h-BN powder was heat-treated under the same conditions as in Example 1 except that no vibrating mill was used, and an X-ray powder diffraction chart of the obtained powder was measured. The X-ray powder diffraction chart (B) of FIG. 3 was obtained.
【0011】以上の図2の振動ミルによる処理を施した
h-BNを用いて、1250℃〜1600℃の温度条件で
高圧熱処理して得られたX線粉末回折チャートと、図3
の振動ミルによる処理を施さないh-BNを用いて、1
250℃〜1600℃の温度条件で高圧熱処理し得られ
た粉末のX線粉末回折チャートと比較すると、Aではc
-BNの形成が著しく促進されていることが理解でき
る。The above-described processing by the vibration mill shown in FIG. 2 was performed.
An X-ray powder diffraction chart obtained by high-pressure heat treatment at a temperature of 1250 ° C. to 1600 ° C. using h-BN, and FIG.
Using h-BN which is not treated by a vibrating mill,
When compared with the X-ray powder diffraction chart of the powder obtained by performing the high-pressure heat treatment under the temperature condition of 250 to 1600 ° C.,
It can be understood that the formation of -BN is remarkably promoted.
【0012】[0012]
【発明の効果】以上述べたように、振動ミル処理をした
h-BN粉末を用いることにより、直接法により、不純
物が少なく、高硬度のc-BNを、比較的低い温度で製
造できるという作用効果がもたらされる。このため高圧
合成装置に対する負担が小さく、経済効率が高い。得ら
れるh-BNには多量の欠陥(主として双晶)が含まれる
ために、従来法によるよりも硬度が高い。なお、c-B
Nの粒子だけを得たい時は、硝酸+弗化水素溶液(15
0℃)内で共存するh-BNを溶解することにより摘出
することができる。また、w-BNを含むことがあるが
これによる硬度の低下はほとんどない。As described above, the use of the h-BN powder which has been subjected to the vibration mill treatment allows the production of c-BN having a small amount of impurities and high hardness at a relatively low temperature by the direct method. The effect is brought. Therefore, the burden on the high-pressure synthesizer is small, and the economic efficiency is high. Since the obtained h-BN contains a large amount of defects (mainly twins), the hardness is higher than in the conventional method. Note that c-B
To obtain only N particles, use nitric acid + hydrogen fluoride solution (15
(0 ° C.) to dissolve the coexisting h-BN. Further, w-BN may be contained, but there is almost no decrease in hardness.
【図1】 圧力7.7GPa,温度1800℃で処理し
たh-BN内に生じたw-BN+c-BNの混在する粒子
の高分解能電子顕微鏡写真である。FIG. 1 is a high-resolution electron micrograph of w-BN + c-BN mixed particles generated in h-BN treated at a pressure of 7.7 GPa and a temperature of 1800 ° C.
【図2】 振動ミル処理を施したh-BNを用いたX線
粉末回折チャートである。(a)1600℃,(b)1
450℃,(c)1350℃及び(d)1250℃の各
場合であって、h:h-BN,c:c-BN,w:w-B
Nを示す。FIG. 2 is an X-ray powder diffraction chart using h-BN subjected to a vibration mill treatment. (A) 1600 ° C, (b) 1
450 ° C., (c) 1350 ° C. and (d) 1250 ° C., where h: h-BN, c: c-BN, w: w-B
N.
【図3】 振動ミル処理を施さないh-BNを用たX線粉
末回折チャートである。(a)1600℃,(b)14
50℃,(c)1350℃及び(d)1250℃の各場
合であって、h:h-BN,c:c-BN,w:w-BN
を示す。FIG. 3 is an X-ray powder diffraction chart using h-BN not subjected to a vibration mill treatment. (A) 1600 ° C, (b) 14
In each case of 50 ° C., (c) 1350 ° C. and (d) 1250 ° C., h: h-BN, c: c-BN, w: w-BN
Is shown.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) C01B 21/064 B01J 3/06 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 6 , DB name) C01B 21/064 B01J 3/06
Claims (1)
を施こし、得られた微粉末を圧力6〜8GPa、温度1
250℃〜1600℃の温度範囲で加熱することを特徴
とする立方晶窒化ほう素の粒子を製造する方法。A raw material powder of hexagonal boron nitride is subjected to vibration milling, and the obtained fine powder is subjected to a pressure of 6 to 8 GPa and a temperature of 1
A method for producing particles of cubic boron nitride, wherein the particles are heated in a temperature range of 250 ° C to 1600 ° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13927497A JP2958449B2 (en) | 1997-05-14 | 1997-05-14 | Method for producing cubic boron nitride particles |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13927497A JP2958449B2 (en) | 1997-05-14 | 1997-05-14 | Method for producing cubic boron nitride particles |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10316408A JPH10316408A (en) | 1998-12-02 |
JP2958449B2 true JP2958449B2 (en) | 1999-10-06 |
Family
ID=15241476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13927497A Expired - Lifetime JP2958449B2 (en) | 1997-05-14 | 1997-05-14 | Method for producing cubic boron nitride particles |
Country Status (1)
Country | Link |
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JP (1) | JP2958449B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU1170501A (en) * | 1999-11-19 | 2001-05-30 | De Beers Industrial Diamond Division (Proprietary) Limited | Cubic boron nitride clusters |
CN110670137B (en) * | 2019-09-02 | 2020-11-24 | 郑州中南杰特超硬材料有限公司 | Synthesis method of micro-powder grade cubic boron nitride single crystal |
CN110670136B (en) * | 2019-09-02 | 2021-02-02 | 郑州中南杰特超硬材料有限公司 | Synthesis method of cubic boron nitride |
-
1997
- 1997-05-14 JP JP13927497A patent/JP2958449B2/en not_active Expired - Lifetime
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Publication number | Publication date |
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JPH10316408A (en) | 1998-12-02 |
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