JP2956350B2 - Simulation device for integrated circuit manufacturing process - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for simulation of a deposition process of an integrated circuit. The present invention relates to a simulation apparatus for an integrated circuit device process that can reliably grasp the state of filling of a deposition material in a deposition process.

[0002]

2. Description of the Related Art In a conventional deposition simulation method, as shown in FIG.
1 and a new point sequence 41 is obtained by moving in the direction in which the deposited material flies for each point sequence by the deposition distance determined by the deposition time and the deposition speed. (Reference: Journal of Vacuu
m Science Technology15
(1), Jan. -Feb. 1978P. 13-19)

[0003]

In the above-described conventional deposition simulation method, since the point trains are handled until they intersect, the filled state of the sedimentary substance when the point trains intersect at one point, or at two points. There is a disadvantage that it is not possible to simulate the hollow state of the sedimentary substance when crossing.

An object of the present invention is to solve such a problem, and an object of the present invention is to provide an apparatus capable of reliably grasping a filled state or a hollow state of a deposited material.

[0005]

According to the present invention, an input device, a display device, an output device, and a storage device are connected to a central processing unit, and the central processing unit has a point on a surface of a substance to be deposited.
A string sequence consisting of
Have deposited material was isotropic or anisotropic deposition from above
In the simulation apparatus for an integrated circuit fabrication process with a deposition process simulation means by Ku moved by a predetermined amount calculated in the process to simulate deposition machining <br/> degree of the integrated circuit, to said central processing unit, an overlap of deposited material String row intersection detecting means for detecting whether or not there is a string row crossing; and a deposited material filling state reproducing means for reproducing a filled or hollow state of the deposited material from the crossing state of the string rows when an overlap is detected. Characterized by having

[0006]

A point sequence is given to the surface of the material to be deposited, the point sequence is moved in the process of isotropically or anisotropically depositing the deposited material from above, and the deposition sequence is simulated during the deposition process. Whether or not there is an overlap between the substances is detected by sequentially detecting the intersection of the point sequence, and when the overlap is detected, the filled or hollow state is reproduced by the intersection state of the point sequence, and the simulation is continued.

[0007] Thus, it is possible to surely grasp the filled state of the deposited material in the depressed place and the hollow state in which the resistance is increased.

[0008]

Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing the overall configuration of the embodiment of the present invention.

In the embodiment of the present invention, an input device 2, a display device 3, an output device 4, and a storage device 5 are connected to a central processing unit 1, and the central processing unit 1 has a dot array on the surface of a substance to be deposited.
Is provided, and the string material is isotropically or anisotropically deposited from above.
The apparatus is provided with a deposition process simulation means 101 for simulating a deposition process of an integrated circuit by moving the integrated circuit by a predetermined amount calculated in the process . Further, as a feature of the present invention, the central processing unit 1 determines whether or not there is an overlap of deposited materials. A string row intersection detecting means 102 for detecting the above by the intersection of the string rows, and a deposited material filling state reproducing means 103 for reproducing a filled or hollow state of the deposited material from the intersecting state of the string rows when an overlap is detected.

Next, the operation of the embodiment of the present invention configured as described above will be described. FIG. 2 is a flowchart showing the operation flow of the string column intersection detecting means in the embodiment of the present invention, and FIGS. 3 (a) to 3 (f) are schematic diagrams for explaining the operation flow.

In the deposition process, to detect the intersection of a series of dots covering the surface of the deposited material, first, the surface of the material to be deposited is covered with a string of strings, and a string of strings is directed from left to right (step). 11: FIG. 3 (a)
reference). Next, the string is moved in the direction in which the deposited material flies and the deposited material flies at a time step δt, a deposition velocity vector v, and a movement vector r at r = δt * v (step 12).

Subsequently, it is determined whether or not an intersection P between one line segment and another line segment constituting the string string is within the line segment (step 13: see FIG. 3B). This determination is made for all the line segments (step 14). If the determination is not completed, it is determined whether there is an intersection (step 1).
5) If there is an intersection, the string string is divided to form one string string (step 16), and step 13
(See FIGS. 3C, 3D, and 3E).

If the determination of all the line segments has been completed, right rotation data in the string string is deleted (step 1).
7: See FIG. 3 (f)). Next, let the data of the left rotation in the string column express the hollow (step 1).
8) The end of the deposition time is determined (step 19), and if within the time, the process returns to step 13 and repeats the processing. Deposition time has finished processing if the end.

As described above, in the deposition simulation method of the present embodiment, the contact between the deposited materials in the deposition process is detected by detecting the intersection of the string rows. In this case, as described above, the surface of the substance to be deposited is covered with the string row in one direction from left to right, and every time the string row moves as the deposition progresses, the intersection of the string row itself is detected. Next, the intersecting string strings are deleted, and the string strings that have been continuous are divided into a plurality of string strings. The intersection of the string strings can be determined based on whether or not the intersection of a straight line expression expressing one line segment between points is on a certain line segment.

[0015]

As described above, according to the present invention, by setting the same conditions as in the state of actually performing the fine processing of the integrated circuit, the deposition state, particularly, the deposition material in a recessed portion such as a groove can be obtained. There is an effect that a state such as a filled state of the metal or a hollow state where the resistivity is increased can be grasped.

[Brief description of the drawings]

FIG. 1 is a block diagram showing an overall configuration of an embodiment of the present invention.

FIG. 2 is a flowchart showing a flow of operation of a string column intersection detecting means in the embodiment of the present invention.

FIGS. 3A to 3F are schematic diagrams showing a flow of an operation of detecting a string column intersection.

FIG. 4 is a cross-sectional view illustrating a deposition simulation in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Central processing unit 2 Input device 3 Display device 4 Output device 5 Storage device 101 Deposition process simulation means 102 String row intersection detection means 103 Sediment material filling state reproduction means

Claims (1)

(57) [Claims] 1. An input device, a display device,
An output device and a storage device are connected, and the central processing unit comprises a series of dots on the surface of the material to be deposited.
A string string is provided, and the string string is calculated in the process of isotropically or anisotropically depositing the deposition material from above.
A simulation apparatus for an integrated circuit manufacturing process, comprising a deposition process simulation means for simulating an integrated circuit deposition process by moving the integrated circuit by a given predetermined amount , wherein the central processing unit determines whether or not there is an overlap of deposited materials. A string array intersection detecting means for detecting the intersection of the strings, and a deposited material filling state reproducing means for reproducing a filled or hollow state of the deposited material from the intersection state of the string rows when an overlap is detected. Simulator for circuit manufacturing process.