JP2936098B1 - Ultraviolet sensor and method of manufacturing the same - Google Patents

Abstract

To provide an ultraviolet sensor which can be formed to be thin and has no possibility of generating unnecessary gas during manufacturing. SOLUTION: A silicon layer is left with a light-transmitting window portion 20 on the opposite surface
An anode-side substrate 12 made of an ultraviolet-transmissive glass formed with 22 and a cathode-side substrate 14 made of silicon on which a photoelectric unit 28 for emitting photoelectrons 38 upon incidence of ultraviolet light on the opposing surface are arranged to face each other. Peripheral edges 12a, 14 of
A is anodically bonded with a frame member 16 interposed therebetween to form an airtightly sealed envelope 18. The envelope 18 is filled with a discharge gas, and the silicon layer 22 led out of the envelope 18
Is connected to the external electrode unit 24 and the cathode side substrate
An external electrode layer 26 is formed on the outer surface of 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultraviolet sensor that senses ultraviolet light and outputs a signal to the outside, and more particularly, to an ultraviolet sensor that can be made thinner and a method of manufacturing the same.

[0002]

2. Description of the Related Art As shown in FIG. 11, a conventional ultraviolet sensor 60 encloses an anode 62 and a cathode 66 having a photocathode 64 together with a predetermined discharge gas in an airtight container 68 made of ultraviolet transmitting glass. Do it. A predetermined gap is provided between the anode 62 and the cathode 66, and the lower ends 62
Reference numerals a and 66a extend to the outside through the lower end sealing portion of the airtight container 68 and constitute external terminals of the ultraviolet sensor 60. A constant voltage is constantly applied between the external terminals by the DC power supply 30.

When ultraviolet rays UV enter the photocathode 64 of the cathode 66 from the outside, photoelectrons 38 are emitted from the photocathode 64 by a photoelectron emission effect. This photoelectron 38
Is caused by the electric field between the anode 62 and the cathode 66.
The gas is attracted to the side 62 and accelerated, and collides with gas molecules in the airtight container 68 to ionize them into electrons and positive ions. Electrons generated as a result of this ionization reach the anode 62 by repeating collision and ionization with other gas molecules. Positive ions are accelerated toward the cathode 66, and
Collision with 64 generates many secondary electrons. By the repetition of the above, a large current suddenly flows between the anode 62 and the cathode 66, and a discharge state occurs.

[0004]

When a current flows through the circuit 32 due to the generation of the discharge, a current detector (ammeter 34) is operated to display the presence of ultraviolet rays to the outside, and the "irradiation with ultraviolet rays" is performed. It can be used as a means for detecting "flame" or "discharge".

However, in the case of the conventional ultraviolet sensor 60, the anode 62 and the cathode 66 are arranged in a cylindrical glass tube in a predetermined discharge gas atmosphere, and then the openings at both ends of the glass tube are heated and melted. Since it is formed by sealing, its outer shape is inevitably bulky, and there is a limit to the reduction in thickness. In addition, when the both ends of the glass tube are melted and sealed, unnecessary gas is generated and mixed into the discharge gas, so that the discharge characteristics of the ultraviolet sensor 60 may become unstable.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide an ultraviolet sensor which can be formed in a thin shape and does not generate unnecessary gas during manufacturing, and a method of manufacturing the same. Is to make it happen.

[0007]

In order to achieve the above object, an ultraviolet sensor according to the present invention comprises an anode-side substrate made of an ultraviolet-transmissive substance having a silicon layer formed on at least one surface thereof while leaving a light-transmitting window. A cathode-side substrate made of silicon on which a photoelectric part that emits photoelectrons by incidence of ultraviolet rays is formed on one surface is disposed such that the silicon layer forming surface of the anode-side substrate and the photoelectric part forming surface of the cathode-side substrate are opposed to each other. The peripheral edges of the opposing surfaces of both substrates are hermetically sealed with a frame member interposed therebetween to form an envelope, and the envelope is filled with a predetermined discharge gas and led out of the envelope. The external electrode part is connected to the silicon layer of the anode side substrate,
An external electrode layer is formed on the outer surface of the cathode-side substrate. As described above, since the envelope of the ultraviolet sensor is formed by arranging the pair of substrates to face each other, it is possible to realize a thin overall shape.

The envelope of the ultraviolet sensor is specifically formed as follows. That is, as the frame member, a first end face made of an insulating material containing movable ions therein and in contact with a peripheral edge of the facing surface of the anode-side substrate, and a second end face in contact with the peripheral edge of the facing surface of the cathode-side substrate. In the state in which the first end face of the frame member is brought into contact with the periphery of the facing surface covered with the silicon layer of the anode-side substrate, the negative side of the DC power supply is connected to the second end face of the frame member. At the same time, the positive side of the DC power supply is connected to the external electrode portion of the anode-side substrate, and a voltage is applied from the DC power supply while heating to a predetermined temperature, so that the first end face of the frame member is connected to the anode side. After anodically bonding the opposing surface periphery of the substrate, in a predetermined discharge gas atmosphere, the second end surface of the frame member is brought into contact with the opposing surface periphery of the cathode-side substrate where silicon is exposed, and the anode-side substrate is contacted. External power With connecting the negative side of the DC power source part, connects the positive side of the DC power source to the external electrode layers of the cathode-side substrate, by applying a voltage from the DC power source while heating to a predetermined temperature,
The second end face of the frame member and the peripheral edge of the facing surface of the cathode-side substrate are anodically bonded.

Alternatively, using a similar frame member, a DC power supply is applied to the first end surface of the frame member in a state where the second end surface of the frame member is in contact with the peripheral surface of the cathode-side substrate where silicon is exposed. And the plus side of the DC power supply is connected to the external electrode layer of the cathode-side substrate, and a voltage is applied from the DC power supply while heating to a predetermined temperature, and the second of the frame member is After the end face and the peripheral edge of the facing surface of the cathode substrate are anodically bonded, the first edge surface of the frame member contacts the peripheral surface of the anode substrate covered with the silicon layer in a predetermined discharge gas atmosphere. The negative side of the DC power supply is connected to the external electrode layer of the cathode-side substrate, and the positive side of the DC power supply is connected to the external electrode portion of the anode-side substrate. Voltage Pressurized to, the opposing surface periphery of the first end surface and the anode-side substrate of the frame member by anodic bonding, may be formed of the envelope Te than.

As described above, if the joining of the frame member to the anode-side substrate and the cathode-side substrate is realized by using the anodic bonding method, it is possible to avoid generating an unnecessary gas in the bonding process.

Alternatively, using a similar frame member, in a predetermined discharge gas atmosphere, the first end face of the frame member is brought into contact with the peripheral edge of the anode-side substrate covered with the silicon layer, and The second end face of the frame member is brought into contact with the periphery of the facing surface of the card-side substrate where silicon is exposed, and an electrode plate is pressed against the outer surface of the anode-side substrate. A DC power source is connected between the electrode plates, and a voltage is applied in one direction from the DC power source while heating to a predetermined temperature, and the periphery of the facing surface of the anode-side substrate and the first end surfaces of the frame member are connected to each other. Alternatively, after one of the peripheral surface of the cathode-side substrate and the second end surface of the frame member is anodically bonded, a voltage is applied in the reverse direction by the DC power supply, and the peripheral surface of the anode-side substrate is Frame members If the other end of the first end faces or the periphery of the facing surface of the cathode-side substrate and the second end face of the frame member is anodically bonded, thereby forming the envelope, the joining process can be performed. Efficiency can be improved.

Alternatively, the frame member is made of an insulating material containing movable ions therein, and has a first end face in contact with a peripheral edge of the anode-side substrate and a second end surface in contact with the peripheral edge of the cathode-side substrate. A first end face of the frame member and a silicon layer of the anode-side substrate in a predetermined discharge gas atmosphere using an end face and an outer peripheral edge protruding from the outer faces of the oppositely disposed substrates; And the second end surface of the frame member is brought into contact with the peripheral surface of the card-side substrate where silicon is exposed, and the outer peripheral edge of the frame member is provided with a DC power supply. The negative side is connected, and the positive side of the DC power supply is connected to the external electrode portion of the anode side substrate and the external electrode layer of the cathode side substrate, respectively, and a voltage is applied from the DC power supply while heating to a predetermined temperature. Te, when a first end face of the opposing surface perimeter and the frame member of the anode-side substrate anodically bonded simultaneously,
If the peripheral edge of the opposing surface of the above-mentioned cursor-side substrate and the second end surface of the frame member are anodically bonded to form the envelope, the efficiency of the bonding process can be further improved.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An ultraviolet sensor 10 according to the present invention
As shown in FIGS. 1 and 2, the anode-side substrate 12 and the cathode-side substrate 14 are arranged to face each other, and
An envelope 18 is formed by hermetically sealing 12a and 14a with a frame member 16 also serving as a spacer therebetween.
18 is filled with discharge gas. The frame member 16 is made of borosilicate glass, and has a shape in which a rectangular glass plate having a thickness of 100 to 500 μm is largely cut out in a rectangular shape. The discharge gas is a He-Ar gas containing 50 to 80% by volume of He or He-Ne.
Consists of gas.

The anode-side substrate 12 is made of an ultraviolet transmitting glass such as borosilicate glass, and has a back surface (opposing surface).
Is formed with a silicon layer 22 adhered to it, leaving the light-transmitting window portion 20. At the end of the silicon layer 22, an external electrode portion 24 made of a nickel film is formed. The cathode-side substrate 14 is made of a single-crystal silicon plate, and an external electrode layer 26 made of a coating of chromium or nickel is formed on the outer surface thereof. In addition, the photoelectric part 28
Are formed. The photoelectric unit 28 is made of a substance that emits photoelectrons when ultraviolet light enters.
_{O, SrO, CaO, Y 2} O 3, YB 6, GdB 6, LaB
_{6, Gd 2 O 3, CeB} 6, ThO 3, PrB 6, NdB 6,
La ₂ O _3, ZrB _2, polycrystalline diamond, LaB ₆ -C
It is formed by depositing a substance having a work function of 5 [eV] or less, such as s, GdB ₆ -Cs, or the like.

As shown in FIG. 2, a positive side of a DC power supply 30 is connected to the external electrode portion 24 of the anode-side substrate 12, and a negative side is connected to the external electrode layer 26, and a constant voltage is applied. I have. An ammeter 34 and a protection resistor 36 are connected to the circuit 32.

When ultraviolet rays are generated due to ignition or the like, the ultraviolet rays U incident on the surface of the
V is connected to the cathode-side substrate 14 through the light-transmitting window 20 on the facing surface.
The photoelectrons 38 reach the optoelectronic unit 28 on the opposing surface, and the photoelectrons 38 are emitted. The photoelectrons 38 are attracted to the inner surface (silicon layer 22) of the anode-side substrate 12 and accelerated by the electric field between the anode and the cathode, collide with gas molecules in the envelope 18, and turn them into electrons and positive ions. Let it ionize. The electrons generated as a result of this ionization reach the silicon layer 22 by repeating collision and ionization with other gas molecules. Further, positive ions are accelerated toward the inner surface of the cathode-side substrate 14 and collide with the photoelectric unit 28 to generate many secondary electrons. By repeating the above, the silicon layer 22 of the anode side substrate 12-the cathode side substrate
A large current suddenly flows between the 14 opposing surfaces, causing a discharge state. When a current flows through the circuit 32 due to the generation of the discharge, the ammeter 34 operates, and it becomes possible to externally display the presence of ultraviolet rays, and thus the occurrence of flame. Of course, an alarm buzzer, a display lamp, or the like may be used as the external display means instead of the ammeter.

The bonding between the anode-side substrate 12 and the frame member 16 and the bonding between the cathode-side substrate 14 and the frame member 16 are performed by an anodic bonding method. A process of forming the envelope 18 using this anodic bonding method will be described with reference to FIGS. First, as shown in FIG. 3, the anode-side substrate 12 is placed on the hot plate 42 with the silicon layer 22 forming surface facing up, and is made of borosilicate glass containing mobile ions (Na ⁺ ) therein. First end face of the frame member 16
16a is overlapped on the peripheral edge 12a of the facing surface of the anode-side substrate 12 covered with the silicon layer 22. The second end face 16 of the frame member 16
b, an electrode plate 44 having a shape corresponding to the end surface shape of the frame member 16;
Is crimped. Further, the positive side of the anode power supply DC power supply 46 is connected to the external electrode portion 24, and the negative side of the DC power supply 46 is connected to the electrode plate 44. Then, the anode plate 12 and the frame member are
16 is heated to 200-600 degrees Celsius, DC power supply
46 to 50 to 1000 V DC voltage is applied.

As a result, as shown in FIG. 4, after a certain period of time, the cations 48 in the frame member 16 move to the minus side (ie, in the vicinity of the second end face 16b of the frame member 16).
The positive side (ie, the anode side substrate in the frame member 16)
The negative charge concentrates on the outer peripheral edge 12a of the anode 12), the space charge layer 50 appears, and a chemical bond with a large attractive force is generated, and the first end face 16a of the frame member and the peripheral edge of the anode-side substrate are opposed to each other. Anodic bonding with 12a is realized.

Next, as shown in FIG. 5, the cathode side substrate 14 is placed on a hot plate 42 in a discharge gas atmosphere.
Is placed with the external electrode layer 26 facing down, and the second end face 16b of the frame member 16 is brought into contact with the opposing surface peripheral edge 14a of the cathode-side substrate 14 where the silicon substrate is exposed without being covered with the photoelectric portion 28. .

The positive electrode of a DC power supply 46 is connected to the external electrode layer 26 of the cathode substrate 14 via a hot plate 42, and the negative electrode of the DC power supply 46 is connected to the external electrode portion 24 of the anode substrate 12. Connected. Then, the cathode side substrate 14 and the frame member 16 are
Is heated to 200 to 600 degrees Celsius, and a DC voltage of 50 to 1000 V is applied from the DC power supply 46.
As a result, by the same mechanism as described above, strong anodic bonding between the peripheral surface 14a of the cathode-side substrate 14 and the second end surface 16b of the frame member is realized, and the envelope 18 having high airtightness is completed. I do.

In the above anodic bonding method, there is no danger of generating an unnecessary gas at the time of bonding since there is no need to melt the glass. In order to make the above anodic bonding stronger, the opposing surface peripheral edge 12a of the anode-side substrate 12, the opposing surface peripheral edge 14a of the cathode-side substrate 14, and both end surfaces 16a, 16b of the frame member 16 can be formed. It is necessary to make the surface as smooth as possible. For example, it is desirable to suppress the surface irregularities to 1 μm or less. In the above, the anode-side substrate 12 and the frame member 16
After joining the cathode-side substrate 14 and the frame member 16, the example in which the cathode-side substrate 14 and the frame member 16 are joined is shown, but after the card-side substrate 14 and the frame member 16 are joined, the anode-side substrate 12 and the frame member 16 are joined. You may.

In the above joining method, after joining either the anode-side substrate 12 or the cathode-side substrate 14 to the frame member 16, the two are turned upside down, and the remaining substrates are overlapped. Although it is necessary to reconnect, these steps can be greatly reduced by using the following method.

That is, as shown in FIG. 6, the cathode side substrate is placed on the hot plate 42 in a discharge gas atmosphere.
14 is placed with the external electrode layer 26 facing down, and the second end face 16 of the frame member is
b is brought into contact. Further, the peripheral edge 12a of the facing surface of the anode-side substrate 12 is brought into contact with the first end surface 16a of the frame member,
A rectangular electrode plate 51 made of nickel, aluminum, stainless steel, or the like is pressed on the outer surface of the anode-side substrate 12.
The external electrode layer 26 of the cathode-side substrate 14 is first connected to the positive side of the DC power supply 46 via the hot plate 42, and the electrode plate 51 is connected to the negative side of the DC power supply 46.

Then, by the hot plate 42,
While the cathode-side substrate 14, the frame member 16, and the anode-side substrate 12 are heated to 200 to 600 degrees Celsius, a DC voltage of 50 to 1000 V is applied from the DC power supply 46. As a result, after the lapse of a certain time, the cations in the frame member 16 are shifted to the minus side (that is, in the vicinity of the first end face 16a of the frame member 16).
The negative charge concentrates near the second end face 16b of the frame member 16 and a space charge layer appears, and the anode between the peripheral edge 14a of the cathode side substrate 14 and the second end face 16b of the frame member is moved. Joining is achieved. Next, the hot plate 42
When the current direction of the DC power supply 46 is reversed while the heating state is maintained, the cations in the frame member 16 move to the vicinity of the second end face 16b, and the negative ions move to the vicinity of the first end face 16a of the frame member 16. The charges concentrate and a space charge layer appears. As a result, the peripheral edge 12a of the facing surface of the anode-side substrate 12 and the first
Anodic bonding with the end surface 16a is realized, and the envelope 18 having high airtightness is completed.

To reverse the current direction of the DC power supply 46, for example, as shown in the drawing, the contacts of the pair of switches 52 and 54 are respectively connected from the first contacts 52a and 54a to the second contact 52a.
It can be easily realized by switching to b and 54b.
Of course, first, the anodic bonding between the opposing surface peripheral edge 12a of the anode-side substrate 12 and the first end surface 16a of the frame member is performed, and then the opposing surface peripheral edge 14a of the cathode-side substrate 14 and the second end surface 16b of the frame member.
Anodic bonding may be performed.

In each of the above-described anodic bonding methods, basically, the bonding between the anode-side substrate 12 and the frame member 16 and the bonding between the cathode-side substrate 14 and the frame member 16 are performed separately. Joining can be done at once. For this purpose, first, as shown in FIGS.
Those having dimensions larger than the vertical and horizontal dimensions of the anode-side substrate 12 and the cathode-side substrate 14 are used. The silicon film 22 formed on the facing surface of the anode-side substrate 12 is
The anode electrode 12 is arranged so as to extend from one side surface to a part of the surface, and an external electrode portion 24 is connected to the extension portion 22a of the silicon film 22. Then, in an atmosphere filled with the discharge gas, the periphery of the facing surface of the anode-side substrate is
12a and the first end surface 16a of the frame member are in contact with each other, and the peripheral edge 14a of the opposing surface of the cathode-side substrate and the second end surface 16a of the frame member are contacted.
b, the anode side substrate 12, the frame member 16,
The cathode side substrate 14 is overlaid. At this time, the outer peripheral edge of the frame member 16 projects in a flange shape from the outer surfaces of the substrates 12 and 14 (FIG. 7).

An electrode frame 58 is crimped to the outer peripheral end face 16c of the frame member 16. The electrode frame 58 is formed by bending a flexible conductive metal band into a rectangular shape so as to correspond to the outer peripheral end face 16 c of the frame member 16. The outer peripheral edge of the frame member is guided into the electrode frame 58 while opening and closing the open / close end 58a of the electrode frame 58 in the left-right direction.
When a is closed, due to the restoring force of the electrode frame 58 itself,
The outer peripheral edge 16 c of the frame member and the inner surface of the electrode frame 58 are pressed. Then, as shown in FIG. 9, the cathode-side substrate 14 is placed on the hot plate 42 in a state where the anode-side substrate 12 and the frame member 16 are stacked.

The positive electrode of a DC power supply 46 is connected to the external electrode portion 24 of the anode substrate 12 and
The plus side of the DC power supply 46 is also connected to the fourteen external electrode layers 26 via the hot plate 42. The negative side of the DC power supply 46 is connected to the electrode frame 58 which covers the outer peripheral edge 16 c of the frame member 16.

While being heated to 200 to 600 degrees Celsius by the hot plate 42, 5
When a voltage of 0 to 1000 V is applied, as shown in FIG.
⁺ ) At the same time as 48 moves to the electrode frame 58 side, a negative charge is concentrated near the interface between the anode-side substrate 12 and the cathode-side substrate 14 to form a space charge layer 50, which generates a large attractive force, The side substrate 12 and the cathode side substrate 14 are chemically bonded to the frame member 16. That is, anodic bonding between the peripheral edge 12a of the facing surface of the anode-side substrate and the first end surface 16a of the frame member,
In addition, anodic bonding between the peripheral edge 14a of the facing surface of the cathode-side substrate and the second end surface 16b of the frame member is simultaneously realized.

As described above, the outer peripheral edge of the frame member 16 is configured to protrude from the outer side surfaces of the anode-side substrate 12 and the cathode-side substrate 14 to secure the movement and accumulation destination of the cations 48. That's why. Also, the outer peripheral edge end face 16c of the frame member.
The reason why the electrode frame 58 is pressure-bonded so as to surround the edge is to apply an electric field uniformly to the entire outer peripheral end face 16c.

[0031]

According to the ultraviolet sensor of the present invention,
As described above, since the anode-side substrate and the cathode-side substrate are joined together with a frame member interposed therebetween, a glass tube is processed as in the conventional case to form an airtight container. As a result, the overall shape can be made thinner. In addition, since the joining of the frame member to the anode-side substrate and the cathode-side substrate is realized by an anodic bonding method that does not involve a melting step, there is no possibility that unnecessary gas is generated in the process of forming the envelope.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing a structure of an ultraviolet sensor according to the present invention.

FIG. 2 is a schematic view showing the operation principle of the ultraviolet sensor.

FIG. 3 is an explanatory diagram showing a joining process of an anode-side substrate and a frame member of the ultraviolet sensor.

FIG. 4 is a schematic view showing a bonding principle of the ultraviolet sensor.

FIG. 5 is an explanatory view showing a joining step of a cathode-side substrate and a frame member of the ultraviolet sensor.

FIG. 6 is an explanatory diagram showing a bonding step of the ultraviolet sensor with an anode-side substrate, a frame member, and a cathode-side substrate.

FIG. 7 is an exploded perspective view showing the structure of another ultraviolet sensor according to the present invention.

FIG. 8 is a perspective view showing a state in which an electrode frame is engaged with a frame member of the ultraviolet sensor.

FIG. 9 is an explanatory view showing a joining step of a frame member with the anode-side substrate and the cathode-side substrate of the ultraviolet sensor.

FIG. 10 is a schematic view illustrating the bonding principle of the ultraviolet sensor.

FIG. 11 is an explanatory diagram showing a conventional ultraviolet sensor.

[Explanation of symbols]

 10 Ultraviolet ray sensor 12 Anode-side substrate 12a Peripheral edge of opposing surface of anode-side substrate 14 Cathode-side substrate 14a Peripheral edge of opposing surface of card-side substrate 16 Frame member 16a First end surface 16b of frame member 16b Second end surface of frame member 16c Outer edge 18 End surface 20 Translucent window 22 Silicon layer 24 External electrode 26 External electrode layer 28 Photoelectric part 46 DC power supply for anode bonding 51 Electrode plate

Continuation of the front page (56) References JP-A-4-345741 (JP, A) JP-A-10-14059 (JP, A) JP-A-10-275587 (JP, A) JP-B-45-29612 (JP) , B1) JP 50-8352 (JP, B1) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01J 40/00-47/26 G01J 1/00-1/60 G01T 1/00 -1/40

Claims (5)

(57) [Claims] 1. An anode-side substrate having a silicon layer formed on at least one surface of a silicon layer leaving a light-transmitting window portion, and silicon having a photoelectric portion formed on one surface to emit photoelectrons by incidence of ultraviolet rays. The cathode side substrate is arranged so that the silicon layer forming surface of the anode side substrate and the photoelectric part forming surface of the cathode side substrate face each other, and the peripheral edges of the opposing surfaces of both substrates are hermetically sealed via a frame member therebetween. Forming an envelope, filling the envelope with a predetermined discharge gas, connecting an external electrode portion to a silicon layer of an anode-side substrate led out of the envelope, and An ultraviolet sensor having an external electrode layer formed on an outer surface of a substrate. 2. The frame member is made of an insulating material containing movable ions therein, and has a first end face in contact with a peripheral edge of the anode-side substrate and a second end surface in contact with the peripheral edge of the cathode-side substrate. A DC power supply is applied to the second end surface of the frame member while the first end surface of the frame member is in contact with the peripheral edge of the anode-side substrate covered with the silicon layer. Connect the negative side,
A positive side of the DC power supply is connected to an external electrode portion of the anode-side substrate, and a voltage is applied from the DC power supply while heating to a predetermined temperature, so that a first end surface of the frame member and an opposing surface of the anode-side substrate. After the peripheral edge is anodically bonded, in a predetermined discharge gas atmosphere, the second end surface of the frame member is brought into contact with the peripheral surface of the cathode-side substrate where silicon is exposed, and the external electrode portion of the anode-side substrate is contacted. The negative side of the DC power source is connected to the external electrode layer of the cathode side substrate, and the positive side of the DC power source is connected, and a voltage is applied from the DC power source while heating to a predetermined temperature. The method for manufacturing an ultraviolet sensor according to claim 1, wherein the second end face and the periphery of the facing surface of the cathode-side substrate are anodically bonded to form the envelope. 3. The frame member is made of an insulating material containing movable ions therein, and has a first end surface in contact with a peripheral edge of the anode-side substrate and a second end surface in contact with the peripheral edge of the cathode-side substrate. A negative end of the DC power source is connected to the first end face of the frame member in a state where the second end face of the frame member is brought into contact with the periphery of the facing surface of the cathode-side substrate where silicon is exposed. And connecting the positive side of the DC power supply to the external electrode layer of the cathode-side substrate, applying a voltage from the DC power supply while heating to a predetermined temperature, and connecting the second end face of the frame member to the cathode. After anodically bonding the peripheral edge of the opposing surface of the side substrate, in a predetermined discharge gas atmosphere, the first end surface of the frame member is brought into contact with the peripheral edge of the anode-side substrate covered with the silicon layer, Outside the cathode side substrate With connecting the negative side of the DC power source to the electrode layer, connects the positive side of the DC power source to the external electrode of the anode-side substrate,
Applying a voltage from the DC power supply while heating to a predetermined temperature, anodically bonding the first end surface of the frame member and the periphery of the facing surface of the anode-side substrate, thereby forming the envelope. The method for manufacturing an ultraviolet sensor according to claim 1, wherein: 4. The frame member is made of an insulating material containing movable ions therein, and has a first end face in contact with a peripheral edge of the anode-side substrate and a second end surface in contact with the peripheral edge of the cathode-side substrate. In a predetermined discharge gas atmosphere, a first end face of the frame member is brought into contact with a peripheral edge of the anode-side substrate covered with a silicon layer in a predetermined discharge gas atmosphere. The second end face is brought into contact with the periphery of the facing surface of the card-side substrate where silicon is exposed, and an electrode plate is pressed against the outer surface of the anode-side substrate, and then the external electrode layer of the cathode-side substrate and the electrode A DC power supply is connected between the plates, a voltage is applied in one direction from the DC power supply while heating to a predetermined temperature, and the periphery of the facing surface of the anode-side substrate and the first end surfaces of the frame member or the cathode side Board After anodizing one of the peripheral edge of the opposing surface and the second end surface of the frame member, a voltage is applied in the opposite direction by the DC power supply, and the peripheral edge of the opposing surface of the anode-side substrate and the first of the frame member are applied. End faces of each other,
2. The ultraviolet sensor according to claim 1, wherein one of the other edge of the opposing surface of the cathode-side substrate and the second end surface of the frame member is anodically bonded to form the envelope. 3. Production method. 5. The frame member is made of an insulating material containing movable ions therein, and has a first end surface in contact with a peripheral edge of the anode-side substrate and a second end surface in contact with the peripheral edge of the cathode-side substrate. A first end face of the frame member and a silicon layer of the anode-side substrate in a predetermined discharge gas atmosphere using an end face and an outer peripheral edge protruding from the outer side faces of the opposed substrates; And a second end face of the frame member is brought into contact with a peripheral face of the card-side substrate where silicon is exposed, and a DC power supply is applied to an end face of an outer peripheral edge of the frame member. And the positive side of the DC power supply is connected to the external electrode portion of the anode side substrate and the external electrode layer of the cathode side substrate, respectively, and a voltage is applied from the DC power supply while heating to a predetermined temperature. hand At the same time, the periphery of the facing surface of the anode-side substrate and the first end surface of the frame member are anodically bonded, and at the same time, the periphery of the facing surface of the cathode-side substrate and the second end surface of the frame member are anodically bonded. The method for manufacturing an ultraviolet sensor according to claim 1, wherein an envelope is formed.