JP2914328B2 - Method for producing oxide superconducting thin film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for producing a superconducting oxide thin film.

[0002]

2. Description of the Related Art In order to use an oxide superconductor in the field of electronics, a technique for forming a single-crystal oxide superconducting thin film having good superconducting properties on an arbitrary substrate is required. The single crystal oxide superconducting thin film has no crystal grain boundaries and has no influence of weak coupling on the transport characteristics, so that a high critical current density can be realized.

Conventionally, single-crystal oxide superconductors have been manufactured as bulk single-crystal and single-crystal thin films.

In recent years, bulk single crystals of several cm square of oxide superconductors have been produced by the floating zone method or the pulling method.

On the other hand, conventionally, as a method of forming a single crystal oxide superconducting film, an epitaxial growth method such as a laser ablation method, a sputtering method, and a reactive evaporation method has been used. In this epitaxial growth method, in order to produce a single crystal oxide superconducting thin film having good superconducting properties, the substrate temperature during the growth is 700 ° C.
Therefore, a single crystal substrate that requires an oxide superconducting material stably and epitaxially grows in an oxidizing atmosphere at a high temperature of about 700 ° C. is required. Accordingly, usable substrates include SrTiO ₃ single crystal substrates, LaAlO ₃ single crystal substrates, MgO single crystal substrates, etc., which satisfy the lattice matching conditions and are suitable for oxide superconductors even at a high film formation temperature of about 700 ° C. And a single crystal substrate that does not cause mutual diffusion.

[0006]

However, the first problem is to be solved.
In addition, bulk single-crystal oxide superconductors are difficult to use in the electronics field because it is difficult to form circuits using photolithography and etching techniques as they are.

Second, in the oxide superconducting thin film manufactured by the epitaxial growth method, there are limitations on the substrates that can be used, so that it is difficult to use them in the electronics field that requires the use of various substrates. there were. For example, when wiring is formed on a Si substrate on which a MOS-FET is integrated on the surface, a MOS-FET that has been formed in advance is used.
It is necessary to produce a thin film for wiring at a low temperature of 300 to 400 [deg.] C. or lower in order not to destroy the substrate. However, the conventional single crystal oxide superconductor epitaxial growth method requires a thin film to be formed at a high temperature of about 700 ° C. on a substrate with excellent lattice matching, and thus has poor lattice matching with the oxide superconductor. Further, it has not been possible to obtain a single-crystal epitaxial thin film having good superconductivity on the above-mentioned Si substrate, which is also liable to interdiffusion. On the other hand, in order to solve such a problem, for example, as described in JP-A-4-365383, after a buffer layer is formed on a Si substrate, a single-crystal epitaxial layer of an oxide superconductor is formed. The formation of a thin film was also considered. In this case, although a thin film having a high superconducting transition temperature can be obtained, the substrate temperature is as high as about 700 ° C., and the thermal expansion coefficients of the oxide superconductor and the Si substrate are different. In the cooling process, there is a problem that cracks are generated in the thin film, and therefore, it is impossible to apply the method to the wiring on the Si substrate.

Third, for example, when a single-crystal oxide superconductor is used as a wiring material of a multilayer substrate for a multi-chip module, a single-crystal oxide superconductor is laminated in multiple layers with an insulating film such as alumina having a small dielectric constant. It is necessary to laminate the oxide superconducting thin film. However, when the second-layer single-crystal oxide superconducting thin film is further formed on the insulating film on the single-crystal oxide superconducting thin film by the epitaxial growth method,
As this insulating film, it is necessary to use a material that allows the oxide superconducting material to be epitaxially grown stably. This requires that the insulating film has good lattice matching with the oxide superconducting material, has no interdiffusion, and has a single crystal shape. However, for example, an alumina insulating film that has been conventionally used as an insulating film is a sintered body made of a polycrystal, and also causes interdiffusion with an oxide superconductor. Could not. As described above, for the above-described applications, the conventional technology has limited not only the usable substrate material but also the insulating film.

Accordingly, an object of the present invention is to provide a method for manufacturing a single-crystal oxide superconducting thin film having good superconducting properties on any desired substrate in view of the above-mentioned prior art. It is in.

[0010]

In order to achieve the above object, the present invention provides a method for producing a single crystal oxide superconducting thin film on a target substrate, comprising:
After attaching a bulk single-crystal oxide superconductor to a target substrate via an adhesive medium, polishing or etching is performed on the bulk single-crystal oxide superconductor. In this case, a protective layer for preventing a reaction between the bonding medium and the bulk single-crystal oxide superconductor may be formed between the bonding medium and the bulk single-crystal oxide superconductor. preferable.

[0011] The present invention also relates to a method for producing a single crystal oxide superconducting thin film on a target substrate, comprising a single crystal oxide superconducting thin film formed on a deposition substrate by an epitaxial growth method. After attaching the oxide superconducting thin film to a target substrate different from the deposition substrate via an adhesive medium, the deposition substrate is removed by polishing or etching. The present invention also includes a method of removing only a part of the deposition substrate by polishing or etching. Further, it is preferable that a protective layer for preventing a reaction between the adhesion medium and the single-crystal oxide superconducting thin film is formed between the adhesion medium and the single-crystal oxide superconducting thin film.

In addition, in any of the above manufacturing methods, an organic polymer or a low-melting-point crystallized glass may be used as the bonding medium, or the same kind of substance as that of the surface of the target substrate may be used. Preferably, a conductive thin film is manufactured.

That is, in the invention as described above, after a bulk single crystal oxide superconductor is bonded to a target substrate, a polishing technique or an etching technique is used.
Single crystal oxide superconducting thin film with excellent superconductivity such as superconducting transition temperature and critical current density can be formed on any desired substrate without problems such as lattice matching and mutual diffusion Becomes Therefore, a circuit can be formed using a photolithography technique or an etching technique, and can be used in the electronics field.

Further, after a single-crystal oxide superconducting thin film is formed on a substrate by epitaxial growth, a single-crystal oxide superconducting thin film is formed on a target substrate by a bonding technique using an adhesive medium. Is attached, the substrate is not limited by the conditions involved by using the epitaxial growth method, and the substrate to be attached can be arbitrarily selected. In this case, on the oxide superconductor,
By coating the protective layer as an adhesive medium to prevent the adhesive medium from reacting with the oxide superconductor, the oxide superconductor deteriorates due to the reaction between the oxide superconductor and the adhesive medium, and the superconducting properties of the oxide superconductor change. Deterioration can be prevented.

Further, an organic polymer is used as an adhesive medium,
Alternatively, by using a low-melting-point crystallized glass, coating by spin coating becomes possible, and even when there is unevenness on the surface of the oxide superconductor or the surface of the target substrate, the adhesive medium flattens the surface, so that it can be easily formed. It becomes possible to stick together.

Further, by using the same kind of substance as the surface of the target substrate as an adhesive medium on the single crystal oxide superconducting thin film or the bulk single crystal oxide superconductor,
It is possible to prevent the oxide superconducting thin film from peeling off due to interface deterioration caused by the difference between the bonding medium and the substance such as the substrate surface.

[0017]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a process chart for explaining one embodiment of the method for producing a superconducting oxide thin film according to the present invention.

In FIG. 1, a single crystal oxide superconducting thin film 2 is formed on a deposition substrate 1 by an epitaxial growth method, and an adhesive medium 3 is applied on the single crystal oxide superconducting thin film 2 (see FIG. a)). Next, the single-crystal oxide superconducting thin film 2 is bonded to an arbitrary substrate 4 by using an adhesive medium 3 so as to face each other (see FIG. 1B). Thereafter, by removing the deposition substrate 1, a crystalline oxide superconducting thin film 2 is manufactured on any desired substrate 4. According to such a method, the substrate on which the single crystal oxide superconducting thin film can be manufactured is not limited by the conditions involved by using the epitaxial growth method, and the substrate on which the single crystal oxide superconducting thin film is manufactured is arbitrarily selected. It becomes possible. In this case, by coating a protective layer on the oxide superconductor to prevent the bonding medium and the oxide superconductor from reacting, the oxide superconductor is formed by the reaction between the oxide superconductor and the bonding medium. Deterioration of the body and deterioration of superconductivity can be prevented.

Although not shown, the bulk single crystal oxide superconductor is attached to an intended substrate via an adhesive medium, and the bulk single crystal oxide superconductor is polished or etched. By doing so, it becomes possible to form a single crystal oxide superconducting thin film having excellent superconductivity on any desired substrate. In this case, if an organic polymer or a low-melting-point crystallized glass is used as the bonding medium, coating by spin coating becomes possible, and even if the oxide superconductor surface or the target substrate surface has irregularities, the bonding medium can be used. However, since the surface is flattened, bonding becomes easy. In addition, by forming a bulk single-crystal oxide superconductor on a substrate into a single-crystal oxide superconductor thin film, it is possible to form circuits using photolithography and etching technologies, which can be used in the electronics field. Becomes

[0021]

Next, the method for producing the oxide superconducting thin film of the present invention will be described in detail with reference to several specific examples. Further, in the description of any of the following examples, an example in which YBa ₂ Cu ₃ O _{7 -X} is applied as an oxide superconducting material has been described.

(First Embodiment) Here, an embodiment in which a thin film having good superconducting properties is manufactured on a desired substrate using a bulk single crystal oxide superconductor will be described. .

FIG. 2 illustrates a first embodiment of the method for producing an oxide superconducting thin film of the present invention, which is applied to the production of a thin film for wiring of a multichip module substrate for a hybrid microwave integrated circuit. FIG. FIG. 2A shows that YBa ₂ Cu ₃ O is formed on a target substrate.
FIG. 4B shows a state in which the _7-X bulk single crystal is bonded, and FIG. 4B shows a state in which the YBa ₂ Cu ₃ O _7-X single crystal is polished into a thin film. In the figure, reference numeral 5 denotes a YBa ₂ Cu ₃ O _7-X bulk single crystal, reference numeral 6 denotes an epoxy-based adhesive, and reference numeral 7 denotes an alumina sintered body substrate.

In this embodiment, the floating zone method
3cm square YBa produced_TwoCu_ThreeO _7-XBulk single crystal
In step 5, the surface to be bonded to the substrate is polished to obtain a smooth surface.
Issued. Next, epoxy on the alumina sintered body substrate 7
System adhesive 6 applied to a thickness of 5 μm by spin coating
And YBa_TwoCu_ThreeO_7-XThe bulk single crystal 5 was bonded.
At this time, the epoxy adhesive 6 is applied by spin coating.
In order to flatten the surface of the lumina sintered body substrate 7, alumina
Even if the surface of the sintered body substrate 7 has irregularities
It's easy. Then, heat at 200 ° C for 8 hours.
To cure the epoxy adhesive 6 (FIG. 6A).
reference).

Thereafter, the surface of the YBa ₂ Cu ₃ O _7-X bulk single crystal 5 was polished, and wet-etched with an aqueous HCl solution to form a thin film having a thickness of 5 μm (FIG. 2B).
reference).

Next, using wet etching, YB
a_TwoCu_ThreeO_7-XPatterning the thin film 5
A delay line using a transmission line was fabricated. This delay line has 20
GH _ZCoaxial cable using 2mm diameter copper at high frequency
Loss similar to that of a
Extremely small delay of less than 1 / 10,000 in volume ratio
Extension was realized. This delay line is semi-conductive on the fabricated chip.
The flip-chip mounting of the body amplifier
By extracting the signal to the amplifier with a tap and adding it,
An extremely compact and high-performance active filter
Produced.

In this embodiment, an epoxy adhesive of an organic polymer is used as an adhesive medium. However, another organic polymer adhesive medium such as a polyimide adhesive can be used. Furthermore, it is desirable to select an adhesive medium that does not react with the oxide superconductor, and to prevent deterioration of the oxide superconductor and deterioration of superconductivity due to the reaction between the oxide superconductor and the adhesive medium. .

(Second Embodiment) Here, an embodiment in which a thin film having good superconducting properties is manufactured on an intended substrate by using an epitaxial growth method will be described.

FIG. 3 is a schematic process diagram for explaining a second embodiment of the method for producing a superconducting oxide thin film of the present invention, which is applied to the production of a wiring thin film on a Si substrate. (A) shows YBa ₂ on the deposition substrate on the left side of the drawing.
This figure shows a state after a Cu ₃ O _7-X thin film, an Au thin film as a protective layer, and a polyimide adhesive layer as an adhesive medium are sequentially formed, and the target Si substrate is shown on the right side of the drawing.
FIG. 3B shows a Si film for forming a YBa ₂ Cu ₃ O _7-X thin film.
Shows a state where combined adhered to a substrate, FIG. (C) is YBa ₂
This shows a state in which the deposition substrate used for epitaxial growth of the Cu ₃ O _7-X thin film has been removed. In FIG.
Denotes an SrTiO ₃ single crystal substrate as a deposition substrate,
Denotes a single-crystal YBa ₂ Cu ₃ O _7-X epitaxial thin film, reference numeral 10 denotes an Au thin film as a protective layer, reference numeral 11 denotes a polyimide-based adhesive, and reference numeral 12 denotes a Si substrate having a MOS-FET integrated on its surface. I have.

In this embodiment, the single-crystal YBa_Two
Cu_ThreeO_7-XAs a substrate for growing the epitaxial thin film 9
250μm with good lattice matching and epitaxial growth
Thick SrTiO_Three Single crystal substrate 8 was used. SrTiO_Three 
Single-crystal YBa on single-crystal substrate 8_TwoCu_ThreeO_7-XEpitaki
The char thin film 9 is ground by laser ablation.
1μ in a plate temperature of 700 ° C and an oxygen atmosphere of 200mTorr
m. Then, at room temperature, single-crystal YBa
_TwoCu_ThreeO_7-XYBa on the epitaxial thin film 9_TwoCu_Three
O_7-XThe thin film 9 reacts with a polyimide adhesive 11 described later.
Au thin film 10 as a protective layer to prevent
It was deposited to a thickness of μm. Furthermore, a polyimide system
Adhesive 11 was applied to a thickness of 2 μm by spin coating
(See FIG. 3A). At this time, spin coat
Liimide-based adhesive 11 is a single-crystal YBa_TwoCu_ThreeO_7-XD
To flatten the surface of the epitaxial thin film 9, YBa_Two
Cu _ThreeO_7-XEven if the surface of the thin film 9 has irregularities, it will be described later.
Bonding with the Si substrate 12 to be performed becomes easy.

Then, a single-crystal YBa ₂ Cu ₃ O _7-x epitaxial thin film 9 on a SrTiO ₃ single crystal substrate 8 is bonded to a Si substrate 12 having a MOS-FET integrated on its surface so as to face each other. The polyimide adhesive 11 was cured by heating at 3 ° C. for 3 hours (see FIG. 3B).

Thereafter, the SrTiO ₃ single crystal substrate 8 was polished to a thickness of 20 μm, and finally removed by wet etching with an HF aqueous solution (see FIG. 3C).

The thin film on the Si substrate manufactured as described above is subjected to single-crystal YBa ₂ Cu ₃ O _7-X epitaxial thin film 9 by using Ar ion milling (ion polishing).
Was patterned to form a wiring. Further, a contact hole was formed using Ar ion milling, and the contact hole was subsequently filled with Au.

The thus prepared YBa ₂ Cu ₃ O _7-X
The wiring does not have the cracks seen in the past, and the SrTiO
₃ Y with good superconducting properties fabricated on single crystal substrate
Like the Ba ₂ Cu ₃ O _7-X wiring, it shows a superconducting transition temperature of 89K, and also has a critical current density of 5 × 10 ⁷ A at 77K.
/ Cm ^2, and no deterioration in superconductivity was observed. The MOS-FET integrated circuit using the YBa ₂ Cu ₃ O _7-X wiring operates at 77K, the RC delay decreases with the low resistance of the YBa ₂ Cu ₃ O _7-X wiring, and the high-speed operation is performed. Was confirmed.

In this embodiment, the Au thin film was used as the protective layer. However, another noble metal thin film such as Pt or M
It goes without saying that a material that does not react with the single crystal oxide superconductor or the bonding medium, such as an oxide thin film such as a gO thin film, can be used.

(Third Embodiment) Here, an embodiment in which a single-crystal oxide superconductor is used as a wiring material for a multi-chip module multilayer substrate will be described.

FIG. 4 is a schematic process diagram for explaining a third embodiment of the method for producing a superconducting oxide thin film according to the present invention, which is applied to the production of a wiring layer of a multilayer substrate for a multichip module. It is. On the left side of the drawing in FIG.
After growing a ₂ Cu ₃ O _7-X thin film, Mg
The state where the O thin film is grown is shown, and the right side of the drawing shows the target MgO substrate. FIG. 2B shows a state in which the YBa ₂ Cu ₃ O _{7 -X} thin film is bonded to the MgO substrate. Figure (c)
Shows a state in which the deposition substrate on which the YBa ₂ Cu ₃ O _7-X thin film is epitaxially grown is thinned. FIG. 3D shows a state in which a YBa ₂ Cu ₃ O _7-X thin film is further attached as a second layer. In FIG.
Single crystal substrate, reference numeral 14 is a single crystal YBa ₂ Cu ₃ O _7-X epitaxial thin film, reference numeral 15 is MgO as an adhesive medium.
Thin film, reference numeral 16 is MgO substrate, reference numeral 17 is LaAlO ₃
A single crystal substrate, reference numeral 18 indicates a single crystal YBa ₂ Cu ₃ O _{7 -X} epitaxial thin film, reference numeral 19 indicates an MgO thin film as a protective layer, and reference numeral 20 indicates a PbO-based low melting point crystallized glass as an adhesive medium.

In this embodiment, the single crystal YBa ₂
The MgO substrate 13 was used as a substrate on which the Cu ₃ O _7-X epitaxial thin film 14 was grown. First, a 0.5 μm thick YBa ₂ Cu ₃ O _7-X thin film 14 is epitaxially grown on a MgO single crystal substrate 13 by a laser ablation method, and then an MgO thin film 15 serving as an adhesive medium is formed to a thickness of 0.2 μm. −Situ growth was performed (see FIG. 3A).
The growth conditions were a substrate temperature of 700 ° C. and an oxygen atmosphere of 200 mT.
orr. The MgO thin film 15 serving as an adhesive medium does not react with the single crystal YBa ₂ Cu ₃ O ₇ -x epitaxial thin film 14.

Then, after cooling to 400 ° C. in an oxygen atmosphere of 1 atm, the MgO thin film 15 on the single crystal YBa ₂ Cu ₃ O _{7 -X} epitaxial thin film 14 and the MgO substrate 16 are brought into opposing contact and pressed at 400 ° C. The YBa ₂ Cu ₃ O _{7 -X} thin film 14 on the MgO single crystal substrate 13 is
The substrates were bonded together on the substrate 16 (see FIG. 3B).

Thereafter, the MgO single crystal substrate 13 was polished to a thickness of 20 μm, and further wet-etched with an HF aqueous solution to a thickness of 1 μm (see FIG. 3C).

Further, LaAl is obtained by the same method as described above.
0.5 μm thick single-crystal YB on O ₃ single-crystal substrate 17
a ₂ Cu ₃ O _7-X epitaxial thin film 18 was prepared, and a 0.2 μm thick MgO thin film 19 was formed thereon as a protective layer.
Was prepared in-situ. Single crystal YBa ₂ Cu ₃ O
After spin-coating a PbO-based low melting point crystallized glass 20 as an adhesive medium to a thickness of 1.5 μm on the MgO thin film 19 on the _7-X epitaxial thin film 18, these YB
The laminated body including the a ₂ Cu ₃ O _7-X thin film 18 was bonded to the thinned MgO single crystal substrate 13 with the low melting point crystallized glass 20 and heated and pressed at 400 ° C. and bonded (FIG. d)). At this time, since the low-melting-point crystallized glass 20 flattens the surface of the MgO thin film 19 by spin coating, the bonding is easy even if the surface of the MgO thin film 19 has irregularities. The MgO thin film 19 serving as a protective layer is made of an adhesive medium (PbO-based low melting point crystallized glass 20).
And does not react with the oxide superconductor (single-crystal YBa ₂ Cu ₃ O _7-x epitaxial thin film 18), and the oxide superconductor is altered by the reaction between the oxide superconductor and the adhesive medium. And deterioration of superconductivity.

Thereafter, the LaAlO ₃ single crystal substrate 17 was polished to a thickness of 20 μm, and then removed by wet etching with an HF aqueous solution.

The two layers of single crystal YBa_TwoCu_ThreeO_7-XD
YBa of the epitaxial thin film_TwoCu _ThreeO_7-XThin film 14
Used as ground plane (ground layer), YBa_TwoCu_Three
O_7-XThe thin film 18 is patterned into a linear
A lip line is formed and the MCM (multi-chip module
). As a result,
The lip line is a normal copper microstrip line
10 GH compared to when using_ZAlmost two orders of magnitude lower
Lost properties. In addition, low loss of MCM substrate
A substrate with LC wiring that can handle up to high frequencies has been realized
Was.

In this third embodiment, two layers of single-crystal YBa ₂ Cu ₃ O _{7 -X} epitaxial thin films are stacked. However, by repeatedly using the manufacturing method of the present invention, a further multilayered structure can be obtained. Needless to say, it can be manufactured. In the third embodiment, an MgO thin film made of the same substance as the surface of the target MgO substrate and a low-melting-point crystallized glass were used as the bonding medium. When the surface of the target substrate is another substance, it goes without saying that the same kind of substance can be used as the adhesive medium. Further, although the MgO thin film is used as the protective layer, other substances can be used as described in the second embodiment.

Further, in the above three embodiments, YBa ₂ Cu ₃ O _{7 -X} was used as the oxide superconductor, but it goes without saying that the present invention can be similarly applied to other oxide superconductors. No.

[0046]

As described above, according to the present invention, a bulk single crystal oxide superconductor is adhered to an arbitrary target substrate via an adhesive medium, and the bulk single crystal oxide superconductor is By polishing or etching, or by attaching a single crystal oxide superconducting thin film produced by an epitaxial growth method on a deposition substrate to an arbitrary substrate of interest via an adhesive medium, It is possible to manufacture a single-crystal oxide superconducting thin film having good superconducting properties on an arbitrary substrate.

[Brief description of the drawings]

FIG. 1 is a process chart for illustrating an embodiment of a method for producing an oxide superconductor thin film of the present invention.

FIG. 2 is a schematic diagram for explaining a first embodiment of a method for manufacturing an oxide superconducting thin film of the present invention, which is applied to manufacture of a thin film for wiring of a multi-chip module substrate for a hybrid microwave integrated circuit. It is a process drawing.

FIG. 3 is a schematic process diagram for explaining a second embodiment of the method for producing a superconducting oxide thin film of the present invention, which is applied to the production of a thin film for wiring on a Si substrate.

FIG. 4 is a schematic process diagram for explaining a third embodiment of the method for producing a superconducting oxide thin film of the present invention, which is applied to the production of a wiring layer of a multilayer substrate for a multichip module.

[Explanation of symbols]

1 substrate 2 oxide superconductor thin film 3 adhesive medium 4 substrate _{5 YBa 2 Cu 3 O 7-} X bulk single crystal 6 epoxy adhesive 7 sintered alumina substrate 8 SrTiO ₃ single crystal substrate 9 single crystal form YBa ₂ Cu ₃ O _7-X epitaxial thin film 10 Au thin film (protective layer) 11 Polyimide adhesive 12 Si substrate 13 MgO single crystal substrate 14 Single crystalline YBa ₂ Cu ₃ O _7-X epitaxial thin film 15 MgO thin film (adhesive layer) 16 MgO Substrate 17 LaAlO ₃ single crystal substrate 18 Single crystal YBa ₂ Cu ₃ O _7-X epitaxial thin film 19 MgO thin film (protective layer) 20 PbO-based low melting point crystallized glass (adhesive layer)

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁶ , DB name) C30B 28/00-35/00 C01G 1/00 H01L 27/18 H01L 39/00 H01L 39/22 H01L 39 / 24 CA (STN) REGISTRY (STN) Patent file (PATOLIS)

Claims (7)

(57) [Claims] 1. A method for producing a single crystal oxide superconducting thin film on a target substrate, comprising the steps of: forming a bulk single crystal oxide superconductor on a target substrate; A method for producing an oxide superconducting thin film, comprising polishing or etching the bulk single-crystal oxide superconductor after attaching via a bonding medium. 2. The method for producing an oxide superconducting thin film according to claim 1, wherein the adhesive medium and the bulk single-crystal oxide superconductor are provided between the adhesion medium and the bulk single-crystal oxide superconductor. A method for producing a superconducting oxide thin film, comprising forming a protective layer for preventing a reaction with a superconductor. 3. A method for producing an oxide superconducting thin film on a target substrate, comprising the steps of: producing a single crystal oxide superconducting thin film on a deposition substrate by epitaxial growth; After attaching the conductive thin film to a target substrate different from the deposition substrate through an adhesive medium, the deposition substrate is removed by polishing or etching. Production method. 4. The method for producing an oxide superconducting thin film according to claim 3, wherein only a part of the deposition substrate is removed by polishing or etching. 5. The method for producing an oxide superconducting thin film according to claim 3, wherein the adhesive medium and the single crystal oxide are located between the adhesion medium and the single crystal oxide superconducting thin film. A method for producing an oxide superconducting thin film, comprising forming a protective layer for preventing a reaction of the superconducting thin film. 6. The method for producing an oxide superconductor thin film according to claim 1, wherein an organic polymer or a low-melting-point crystallized glass is used as the bonding medium. Of manufacturing superconducting thin film. 7. The method for producing an oxide superconductor thin film according to claim 1, wherein a substance similar to the surface of the target substrate is used as the adhesive medium. A method for producing an oxide superconducting thin film.