JP2913671B2 - ECR plasma CVD apparatus and method for manufacturing semiconductor device using the same - Google Patents

Description

Description: BACKGROUND OF THE INVENTION The present invention relates to a plasma CVD apparatus for growing a thin film in a vapor phase by plasma excitation and surface reaction, and in particular, utilizes an ECR (Electron Cyclotron Resonance) phenomenon as a plasma source. E
It relates to CR plasma CVD equipment. Further, the present invention relates to a method for manufacturing a semiconductor device using an ECR plasma CVD apparatus.

[Summary of the Invention]

The present invention introduces a gas into a plasma generation chamber through a gas introduction unit, guides a microwave through a microwave introduction window to generate plasma, activates molecules in the plasma, and forms a film. In an ECR plasma CVD apparatus for reacting and depositing a thin film on a substrate to be deposited, the magnetic field generating means arranged outside the plasma generation chamber having the microwave introduction window was moved to deposit on the microwave introduction window. By configuring the unnecessary deposits to be removed by etching, the deposition of the unnecessary deposits on the microwave introduction window is prevented, and the reliability of the film forming process and the apparatus itself and the efficiency of the film forming process are improved. It was done.

Further, the present invention provides the above ECR plasma CVD apparatus,
Magnetic field generating means is provided outside each of the plasma generation chamber and the reaction chamber having the microwave introduction window, and the magnetic field generated by one of the magnetic field generation means is diverged to the microwave introduction window side, and unnecessary magnetic fields are deposited on the microwave introduction window. By configuring so that the deposits are removed by etching, the deposition of unnecessary deposits on the microwave introduction window is prevented, and the reliability of the film forming process and the apparatus itself and the efficiency of the film forming process are improved. Things.

Further, the present invention, using the above ECR plasma CVD apparatus,
By forming a thin film on the substrate, it is possible to prevent film deposition on the microwave introduction window, prevent clouding due to this film deposition, and reliably grow a thin film on the substrate, thereby providing a semiconductor device having good characteristics. Can be manufactured.

[Conventional technology]

Generally, charged particles in a static magnetic field perform circular motion (cyclotron motion) due to Lorentz force. When the angular frequency of this motion is matched with the frequency of the high frequency electric field of 2.45 GHz, resonance absorption occurs, and the electric field energy is efficiently absorbed by the charged particles. ECR plasma CVD is a method of efficiently decomposing and activating a reaction gas using this phenomenon and forming a film under a high vacuum of, for example, about 10 ^-5 Torr.

This ECR plasma CVD method is attracting attention as a film forming technology for ultra-high integrated circuits in the future. The reason is that discharge (ionization) can be performed at a low pressure, high-density plasma can be formed even at a low pressure, and a plasma generation region and a film growth region can be separated. In addition, if a high-frequency voltage (RFbias) is applied to the sample stage supporting the wafer, it is possible to form a flattened film on the surface of the wafer having an uneven surface. ,
The generation of foreign matter can be reduced, and a high-quality thin film can be formed at a low temperature.

At present, the above features are fully utilized to make ECR plasma CVD
There has been an attempt to form a metal film having a good film quality (for example, a tungsten film) by the method.

[Problems to be solved by the invention]

However, when a metal film is formed by the ECR plasma CVD method, the temperature of the quartz microwave introduction window rises due to heat generation at the time of microwave introduction, and the microwave is introduced and the source gas is diffused. In the method, the heat energy of the microwave introduction window increases the rate of attachment of molecules in the raw material gas to the microwave introduction window, and film deposition (deposition of unnecessary deposits) occurs on the microwave introduction window. Accordingly, as the film deposition on the microwave introduction window progresses, the microwave does not enter the plasma generation source (plasma generation chamber), and there is a disadvantage that the film cannot be grown on the wafer. In order to solve this, current voltage (bias)
Is applied, and a film is grown on a wafer while etching the film deposited on the microwave introduction window. However, since the microwave introduction window itself is also etched, the microwave introduction window itself is etched. There was an inconvenience that clouding was generated, and the clouding hindered the film growth on the wafer. (Refer to the 36th Applied Physics Related Lectures "Process Technology" Spring '88 -'89 Spring P7213P-ZF-1 ).

The present invention has been made in view of such a point, and an object of the present invention is to prevent film deposition on a microwave introduction window without causing etching on the microwave introduction window itself, and to prevent the film from being deposited on a wafer. ECR plasma C that can improve the reliability of the film growth and the equipment itself and the efficiency of the film forming process
An object of the present invention is to provide a VD device and a method for manufacturing a semiconductor device using the same.

[Means for solving the problem]

The ECR plasma CVD apparatus of the present invention introduces a gas into a plasma generation chamber (2) through a gas introduction means (9) and guides a microwave through a microwave introduction window (7) to generate plasma. In a ECR plasma CVD apparatus for generating molecules, activating molecules in the plasma, and reacting on a substrate (wafer) (3) on which a film is to be formed to deposit a thin film, plasma generation having a microwave introduction window (7) The magnetic field generating means (10) disposed outside the chamber (2) is made movable so that unnecessary deposits deposited on the microwave introduction window (7) are removed by etching.

Further, according to the present invention, in the above-mentioned ECR plasma CVD apparatus, magnetic field generating means (21) and (22) are provided outside a plasma generation chamber (2) having a microwave introduction window (7) and a reaction chamber (1), respectively. The magnetic field generated by one of the magnetic field generating means (22) is diverged toward the microwave introduction window (7) to remove unnecessary deposits deposited on the microwave introduction window (7) by etching.

Further, the present invention provides a magnetic field generating means (10) which is also used for etching and removing unnecessary deposits deposited on the microwave introduction window (7) outside the plasma generation chamber (2) having the microwave introduction window (7). In the reaction chamber (1) of the ECR plasma CVD apparatus, which is arranged so that it can move, semiconductor wear (3)
Is placed, a reaction gas is introduced into the plasma generation chamber (2), microwaves are guided to the plasma generation chamber to generate plasma, and a CVD thin film is grown on the semiconductor wafer (3). To manufacture.

Further, according to the present invention, magnetic field generating means (21) and (22) are arranged outside the plasma generating chamber (2) having the microwave introduction window (7) and the reaction chamber (1), respectively. ECR plasma CVD wherein the means (22) is used for etching and removing unnecessary deposits deposited on the microwave introduction window (7)
A semiconductor wafer (3) is placed in a reaction chamber (1) of the apparatus, a reaction gas is introduced into a plasma generation chamber (2), and a CVD thin film is grown on the semiconductor wafer (3) to form a semiconductor device. To manufacture.

[Action]

According to the configuration of the first aspect of the present invention, the magnetic field generating means (10) disposed outside the plasma generation chamber (2) is made movable. By locating the generating means (10) on the film growth region side, that is, on the reaction chamber (1) side, the resonance point r of the ECR can be moved away from the microwave introduction window (7), and the microwave introduction window (7) A film can be formed on the wafer (3) with little film deposition (deposition of unnecessary deposits) on the wafer (3). On the other hand, when removing the film deposited on the microwave introduction window (7), the magnetic field generating means (10) is positioned on the microwave introduction window (7) side, and the resonance point r of the ECR is set to the microwave introduction window (7). ) Side and by flowing an etching gas instead of a plasma reaction gas (raw material gas), without etching the microwave introduction window (7) itself (because of low ion energy), the microwave introduction window ( The film deposited in 7) can be removed.
At this time, since the resonance point r of the ECR is close to the microwave introduction window (7), the microwave introduction window (7) can be efficiently cleaned. Further, since the film removed by etching becomes a gas, generation of dust accompanying etching of the film deposited on the microwave introduction window (7) can be suppressed.

According to the second aspect of the present invention, one of the magnetic field generating means (21) and (22) provided outside the plasma generating chamber (2) and the reaction chamber (2), respectively. twenty two)
The magnetic field caused by the above is diverged to the microwave introduction window (7) side.
The plasma of the etching gas can be sent to the microwave introduction window (7) side by the magnetic field, and the film (unnecessary deposit) deposited on the microwave introduction window (7) can be removed by etching. Since this etching has a low ion energy, the microwave introduction window (7) is hardly etched. Further, since the film removed by etching becomes a gas, generation of dust accompanying etching of the film deposited on the microwave introduction window (7) can be suppressed.

Further, according to the third and fourth aspects of the present invention, the film deposition on the microwave introduction window is prevented by forming a CVD thin film on a semiconductor using the ECR plasma CVD apparatus having the above configuration, The fogging due to this film deposition is prevented, so the CV
D The thin film can be reliably grown on the substrate without hindering the formation of the thin film. Therefore, a semiconductor device having good characteristics can be manufactured.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS.

1A and 1B show an ECR plasma CVD according to a first embodiment.
It is a block diagram showing an apparatus. In this figure, (1) shows a reaction chamber for forming a film on a wafer (3), and (2) shows a plasma generation chamber.

The reaction chamber (1) has a susceptor (4) on which a wafer (3) is placed, and a gas introduction pipe (5) on a side wall.
Is provided. The reaction chamber (1) is connected to an exhaust system including a valve, a pump, and the like. A plasma generation chamber (2) is provided above the reaction chamber (1) via a plasma extraction window (6), and a quartz microwave introduction window (7) is further provided in the plasma generation chamber (2). A microwave waveguide (8) is provided therethrough. Further, a gas introduction pipe (9) is provided in the upper part of the plasma generation chamber.

In the present embodiment, the exciting coil (10) is connected to a vertical sliding mechanism (not shown) outside the plasma generation chamber (2), so that the outside of the plasma generation chamber (2) can slide up and down. It is provided in. The inside of the plasma generation chamber (2) and the inside of the reaction chamber (1) are evacuated to a pressure of 5 by an exhaust system.
It is kept at a high vacuum of × 10 ^-3 Torr.

The ECR plasma CVD apparatus forms a film on the wafer (3) as follows.

That is, as shown in FIG. 1A, for example, argon Ar gas (otherwise hydrogen H ₂ gas is also used) is introduced into the plasma generation chamber (2) from the gas introduction pipe (9), and the microwave waveguide is introduced. The microwave (2.45 GHz, microwave) is introduced into the plasma generation chamber (2) through the tube (8) and the microwave introduction window (7).
800 W), and furthermore, a current flows through the exciting coil (10) to generate a downward magnetic field in the plasma generation chamber (2), thereby generating an argon-Ar gas plasma in the plasma generation chamber (2), By self-diffusion or magnetic field,
That is, a so-called plasma flow (11) flows in the direction of the reaction chamber (1).
Is formed. At this time, the exciting coil (10) is positioned below the plasma generation chamber (2), that is, closest to the reaction chamber (1) by a vertical sliding mechanism (not shown) (the position indicated by the symbol a in FIG. 1). The point where the angular frequency of the charged particles performing cyclotron motion due to the action of the magnetic field coincides with the frequency of the microwave (the point of 875 GS in terms of the strength of the magnetic field), that is, ECR
Is located at the lower part in the plasma generation chamber (2) away from the microwave introduction window (7).

The reaction gas WF ₆ / SiH ₄ / H ₂ introduced into the reaction chamber (1) from the gas introduction pipe (5) is brought into a plasma state in which the reaction gas diffuses with the plasma flow (11) through the plasma extraction window (6). Is directly dissociated by Ar ^* in the excited metastable state of the argon Ar. In this example, the reaction gas WF ₆ / SiH ₄ / H ₂ was WF ₆ = 20 SCCM, SiH ₄ = 3 SCCM, and H ₂ = 100 SCCM. Incidentally, H ₂ is a carrier gas and a reducing gas.

W ^* or WS that has been dissociated into active species in this way
ix ^* is the susceptor (4) integrated with the plasma flow (11)
The wafer is transported upward to form a tungsten (W) film (hereinafter simply referred to as W film) or a tungsten silicide (WSix) film (hereinafter simply referred to as WSix film) on the wafer (3). At this time, a W film or a WSix film is usually deposited also on the microwave introduction window (7), but in this example, the resonance point r is formed at a position far from the microwave introduction window (7). The W film or WSix film hardly deposits on the microwave introduction window (7). However, the wafer (3)
The W film or the WSix film is deposited on the microwave introduction window (7) as many cycles of film formation are repeated. Therefore, in this example, as shown in FIG.
After a number of cycles of film formation on the susceptor (4), an etching gas such as SF ₆ is introduced from the gas introduction pipe (9) while the wafer (3) is not placed on the susceptor (4), and the exciting coil (10) is introduced. ) At the upper part of the plasma generation chamber (2),
That is, the W film or WS deposited on the microwave introduction window (7) is located at the position closest to the microwave waveguide (8) (the position indicated by the symbol b in FIG. 1).
The ix film is removed by etching.

That is, the SF ₆ gas is plasma-excited to F ^* at the resonance point r and diffuses downward due to the magnetic field. However, the resonance point r approaches the microwave introduction window (7) due to the positional relationship of the exciting coil (10). Since it is formed at the position, the aftermath of the diffusion of F ^* reaches the microwave introduction window (7), and the window (7)
The W film or WSix film deposited on the substrate is etched away and the microwave introduction window (7) is efficiently cleaned (W) as the resonance point r approaches the microwave introduction window (7) as described above. Film or WSix film). When cleaning the microwave introduction window (7) more efficiently, the excitation coil (1
The direction of the magnetic field 0) may be set upward, that is, from the reaction chamber (1) to the microwave introduction window (7) (first).
(Indicated by broken lines in FIG. B).

Since the above etching has a low ion energy, the etching rate ratio between quartz and tungsten (W) is 1:50, and quartz is hardly etched. Therefore, the microwave introduction window (7) made of quartz is hardly etched, and there is no inconvenience that the microwave introduction window (7) is fogged by the etching. Further, the etched W film, for example, becomes a gas by the reaction of W + xF ^* → WFx ↑ and is finally exhausted by the exhaust system, so that generation of dust due to etching can be suppressed.

Next, as in the first embodiment, unnecessary deposits (for example, W film or WSix
A second embodiment in which the film is prevented from being deposited on the microwave introduction window (7) will be described with reference to FIG.

The configuration of the second embodiment is basically the same as that of the first embodiment, except that two exciting coils are used.
The components corresponding to those in the first embodiment are denoted by the same reference numerals, and detailed description of ECR plasma CVD is omitted.

That is, in the second embodiment, as shown in FIG. 2, an excitation coil (21) for generating a downward magnetic field is provided outside the plasma generation chamber (2), and the outside of the reaction chamber (1). Is provided with an exciting coil (22) for generating an upward magnetic field.

When a W film or a WSix film is formed on the wafer (3) of the susceptor (4) in the same manner as in the first embodiment, the exciting coil (21) is turned ON as shown in FIG. When the exciting coil (22) is turned off), an Ar gas is introduced into the plasma generation chamber (2) from the gas introducing pipe (9), and the microwave waveguide (8) and the microwave introducing window are further introduced. The microwave is guided into the plasma generation chamber (2) through (7) to form a downwardly flowing Ar ^* plasma flow (11) in the plasma generation chamber (2), and the gas introduction pipe (5) Reaction gas WF ₆ / SiH ₄ / H ₂ from the reaction chamber (1)
To form a W film or a WSix film on the wafer (3).

On the other hand, when the W film or WSix film deposited on the microwave introduction window (7) is removed by etching, as shown in FIG. 2B, the exciting coil (21) is turned off and the exciting coil (22) is turned off. Turn on, and further etch gas, for example SF ₆
Is introduced into the reaction chamber (1) from the gas introduction pipe (5) to form a plasma flow (23) of F ^* upward, that is, from the reaction chamber (1) to the plasma generation chamber (2). F
^* The cleaning said window (7) and transported to the microwave introducing window (7) (W film or etching removal WSix film).

In order to more efficiently clean the microwave introduction window (7), a microwave waveguide may be provided on the reaction chamber (1) side as shown in FIG. That is, the susceptor (4) is formed hollow, and a transparent quartz plate (24) is fitted to the upper end of the susceptor (4) so that the susceptor (4) also functions as a kind of optical waveguide. A microwave waveguide (25) is connected to the lower part of the device. When cleaning the microwave introduction window (7), the microwave waveguide from the microwave waveguide (8) is stopped, and then the microwave is introduced from the microwave waveguide (25) provided below the susceptor (4). , And then the same as above. With this configuration, the direction of the microwave propagation coincides with the direction of the magnetic field generated by the exciting coil (22), so that the F ^* plasma flow (23) efficiently flows toward the microwave introduction window (7). The etching of the W film or WSix film deposited on the microwave introduction window (7) according to the second embodiment is performed as follows.
Since the etching is performed with low ion energy as in the first embodiment, the quartz microwave introduction window (7) is hardly etched, and the window (7) does not become clouded. Further, since the etched W film or WSix film becomes gas, generation of dust due to etching can be suppressed.

As described above, according to the first and second embodiments, since the action of the magnetic field of the exciting coil (10) and (21) and (22) is used and an etching gas (for example, SF ₆ ) is introduced, Unnecessary deposits deposited on the microwave introduction window (7) by repeating the film processing cycle can be removed without etching the window (7), and the wafer (3) can be removed.
The reliability of film formation on the substrate and the reliability of the apparatus itself can be improved. In particular, according to the first embodiment, when the film is formed on the wafer (3), the position of the resonance point r is farther from the microwave introduction window (7), so that the film is moved to the microwave introduction window (7). Almost no unnecessary deposits are generated, and the number of times of cleaning (etching and removing the deposited unnecessary deposits) on the microwave introduction window (7) can be greatly reduced, thereby improving the efficiency of the film forming process. Can be planned. on the other hand,
In particular, according to the second embodiment, since the two excitation coils (21) and (22) are dedicated to one of the purposes of forming a film or removing unnecessary deposits by etching, each of the excitation coils (21) and (22) is used.
In (22), conditions such as the strength of the magnetic field and the distribution of the magnetic flux can be optimized according to the application.

Next, some examples of preventing the deposition of unnecessary deposits (for example, a W film or a WSix film) on the microwave introduction window (7) without using the action of the magnetic field by the excitation coil are shown in FIGS. This will be described with reference to FIG. Since the examples shown in FIGS. 4 to 7 have basically the same configuration as that of the first embodiment, the same reference numerals are given to those corresponding to the first embodiment, and in particular, FIGS. 6 and 7 are partially omitted, and only main parts are shown. In addition, these 4th
The excitation coil (10) shown in FIGS. 7 to 9 is not a movable type but a fixed type.

First, in the third embodiment shown in FIG. 4, an etching gas is introduced into the plasma generation chamber (2) to remove unnecessary deposits deposited on the microwave introduction window (7) by optical etching.

That is, the microwave waveguide (8) extending upward from the plasma generation chamber (2) via the microwave introduction window (7) is refracted in the middle to form a substantially L-shape, and the microwave introduction window (7) The quartz light transmission window (3
1).

When unnecessary deposits (for example, W film or WSix film) are deposited on the microwave introduction window (7) by the film formation process on the wafer, for example, chlorine Cl ₂ gas is supplied from the gas introduction pipe (9) to the plasma generation chamber. Light (33) is irradiated from a light source (for example, a Xe-Hg lamp) (32) toward the light transmission window (31) while being introduced into (2). The light transmission window (31) and the microwave introduction window (7) are both made of quartz and have a light source (3).
Needless to say, of the light emitted in 2), light having a wavelength of 313 nm that dissociates Cl ₂ is transmitted.

By the way, the unnecessary deposits deposited on the microwave introduction window (7) are separated by Cl ₂ → Cl ^* (dissociation by light) W (WSix) + xCl by the etching gas (Cl ₂ ) and light transmission from the light source (32). ^* Etched and removed in the form of WClx ↑ (or WOClx ↑). The microwave introduction window (made of quartz) (7) is not etched by Cl ^* .

As described above, according to the third embodiment, similarly to the first and second embodiments, unnecessary deposits deposited on the microwave introduction window (7) by repeating the film forming process cycle are removed from the window (7). 7) can be removed without etching, and the reliability of film formation on a wafer and the reliability of the apparatus itself can be improved.

Next, the fourth embodiment shown in FIG. 5 has a structure in which the microwave introduction window (7) is separated from the plasma generation chamber (2), and the microwave is reflected by a reflector (reflecting mirror) (41). The introduction into the plasma generation chamber (2) prevents unnecessary deposits from being deposited on the microwave introduction window (7).

That is, the microwave waveguide (8) extending upward from the plasma generation chamber (2) is bent in the middle to form a substantially inverted V shape, and the microwave introduction window (7) is formed in the plasma generation chamber (2). A portion that does not directly face the inside, that is, one wing portion (8a) of the microwave waveguide (8) having an inverted V shape in this example.
And a reflector (41) is provided at the apex of the microwave waveguide (8) so as to be parallel to the microwave introduction window (7).

When a film is formed on the wafer (3) on the susceptor (4), for example, argon is supplied from the gas introduction pipe (9).
Ar gas is introduced into the plasma generation chamber (2), and microwaves are made to enter through the microwave waveguide (8) and the microwave introduction window (7), and then reflected by the reflector (41) to be reflected by the plasma generation chamber (2). An Ar ^* plasma flow (11) flowing from the plasma generation chamber (2) to the reaction chamber (1) is formed by guiding the light into the plasma generation chamber (2), and further, for example, WF ₆ / SiH ₄ / and H ₂ introduced into the reaction chamber (1) in forming a W film or WSix film on the wafer (3).
At this time, W ^* or WSix ^* generated by the reaction between the reaction gas and the plasma flow (11) diffuses to the upper portion in the plasma generation chamber (2), but the microwave introduction window (7)
The W ^* or WSix ^* does not reach the microwave introduction window (7) because it is separated from the upper part of the plasma generation chamber (2) and does not directly reach the inside of the plasma generation chamber (2).
No film or WSix film deposition occurs.

Next, in the fifth embodiment shown in FIG. 6, a fan (51) made of a material that transmits microwaves is provided outside the microwave introduction window (7), that is, on the side of the plasma generation chamber (2). ,
The microwave introduction window (7) by the rotation of the fan (51)
This is to forcibly suppress the accumulation of unnecessary deposits on the soil. In the illustrated example, a quartz fan (51) is provided near the outside of the microwave introduction window (7), and the motor (52) rotates the fan (51) at a speed of, for example, 60 rotations per minute to forcibly. That is, the gas flow is directed downward by the downward airflow generated by the rotation of the fan (51), thereby preventing unnecessary deposits from being deposited on the microwave introduction window (7).

Next, in a sixth embodiment shown in FIG. 7, the microwave introduction window (7) is warmed by plasma excitation, and the microwave energy of the microwave introduction window (7) is used by the microwave energy of the microwave introduction window (7). Focusing on the fact that the deposition rate on the microwave introduction window (7) is increased due to an increase in the adhesion speed to the microwave introduction window (7), the periphery of the microwave introduction window (7) is formed. By providing a cooling means to cool the window (7), the accumulation of unnecessary deposits on the microwave introduction window (7) is suppressed. That is, as shown in the characteristic diagram of FIG. 8, the amount of undesired deposits adhering to the microwave introduction window (7) has a temperature dependence, and the adhesion due to the adsorption action increases in a low temperature region, and increases in a high temperature region. The deposition due to the vapor phase growth reaction increases, and in both cases, the deposition amount of the unnecessary deposits on the microwave introduction window (7) sharply increases. For this reason, although the cooling temperature varies depending on the type of the source gas, the adhesion of the unnecessary deposits can be suppressed by maintaining the cooling temperature in the intermediate temperature range. In the illustrated example, a coiled conduit (61) is provided around the microwave introduction window (7),
The microwave introduction window (7) is cooled by flowing a refrigerant through the conduit (61), and the intermediate temperature region shown in FIG. 8 is maintained, that is, the temperature is controlled by controlling the flow rate of the refrigerant. realizable. In the sixth embodiment, the cooling means for cooling the microwave introduction window (7) is shown by way of example using a refrigerant. However, the present invention is not limited to this method, and other cooling means may be used. .

According to the fourth to sixth embodiments as described above, unlike the first to third embodiments, unnecessary deposits deposited on the microwave introduction window (7) are not removed by etching.
Unnecessary deposits can be prevented from being deposited on the microwave introduction window (7) in advance, so that the film formation can be performed without stopping, that is, together with the film formation, and the efficiency of the film formation process can be improved. Can be further improved.

〔The invention's effect〕

The ECR plasma CVD apparatus according to the present invention is configured such that magnetic field generating means arranged outside a plasma generation chamber having a microwave introduction window is movable to etch away unnecessary deposits deposited on the microwave introduction window. Therefore, it is possible to prevent unnecessary deposits from being deposited on the microwave introduction window, and to improve the reliability of the film forming process and the apparatus itself.

Further, the ECR plasma CVD apparatus according to the present invention is provided with a magnetic field generation means outside the plasma generation chamber and the reaction chamber having a microwave introduction window, respectively, and diverges the magnetic field by one of the magnetic field generation means to the microwave introduction window side. Since the unnecessary deposits deposited on the microwave introduction window are configured to be removed by etching, the deposition of the unnecessary deposits on the microwave introduction window can be prevented, and the reliability of the film forming process and the apparatus itself can be reduced. In addition to the above, the efficiency of the film forming process can be improved. Furthermore, each magnetic field generating means can be optimized according to each application.

In addition, the method for manufacturing a semiconductor device according to the present invention comprises forming a CVD device on a semiconductor wafer by using the above-described ECR device of the present invention to manufacture a semiconductor device, thereby removing unnecessary deposits on a microwave introduction window. Since film deposition and fogging due to this film deposition are prevented, a CVD thin film can be grown on a semiconductor wafer with high reliability, and a semiconductor device having good characteristics can be manufactured.

[Brief description of the drawings]

FIG. 1 is a block diagram showing an ECR plasma CVD apparatus according to the first embodiment, FIG. 2 is a block diagram showing an ECR plasma CVD apparatus according to the second embodiment, and FIG. 3 is a modification of the second embodiment. FIG. 4 is a block diagram showing the ECR plasma CVD apparatus according to the third embodiment with a part omitted, and FIG. 5 is an ECR plasma CVD apparatus according to the fourth embodiment.
FIG. 6 is a configuration diagram illustrating a plasma CVD apparatus, FIG. 6 is a configuration diagram partially illustrating an ECR plasma CVD apparatus according to a fifth embodiment, and FIG. 7 is a view partially illustrating an ECR plasma CVD apparatus according to the sixth embodiment. FIG. 8 is a characteristic diagram showing the temperature dependence of the deposition rate on the microwave introduction window. (1) is a reaction chamber, (2) is a plasma generation chamber, (3) is a wafer, (4) is a susceptor, (5) and (9) are gas introduction tubes, (6) is a plasma extraction window, and (7). Is a microwave introduction window, (8) is a microwave waveguide, (10), (21) and (22) are excitation coils, (11) is a plasma flow, (25) is a microwave waveguide, and (31) is Light transmission window, (32) is a light source,
(41) is a reflector, (51) is a fan, and (52) is a motor.

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁶ , DB name) C23C 16/00-16/56 H01L 21/205, 21/31

Claims (4)

(57) [Claims] A plasma is generated by introducing a gas into a plasma generation chamber through a gas introduction means, guiding a microwave through a microwave introduction window, activating molecules in the plasma, and forming a film. An ECR plasma CVD apparatus for reacting and depositing a thin film on a substrate to be formed, wherein the magnetic field generation means disposed outside the plasma generation chamber having the microwave introduction window is movable, and the microwave is introduced on the microwave introduction window. An ECR plasma CVD apparatus characterized in that deposited unnecessary deposits are removed by etching. 2. A plasma is generated by introducing a gas into a plasma generation chamber through a gas introduction means, guiding a microwave through a microwave introduction window, and activating molecules in the plasma. An ECR plasma CVD apparatus for reacting and depositing a thin film on a substrate to be formed, wherein magnetic field generating means is provided outside the plasma generation chamber having the microwave introduction window and outside the reaction chamber, and one of the magnetic field generating means is provided. An ECR plasma CVD apparatus characterized in that a magnetic field generated by the above is diverged toward the microwave introduction window, and unnecessary deposits deposited on the microwave introduction window are removed by etching. 3. An ECR plasma CVD apparatus wherein a magnetic field generating means used for etching and removing unnecessary deposits deposited on the microwave introduction window is movably disposed outside a plasma generation chamber having a microwave introduction window. Disposing a semiconductor wafer in a reaction chamber of the apparatus, introducing a reaction gas into the plasma generation chamber, guiding microwaves to the plasma generation chamber to generate plasma, and depositing a CVD thin film on the wafer A method for manufacturing a semiconductor device, comprising: 4. A magnetic field generating means is disposed outside each of a plasma generating chamber having a microwave introducing window and a reaction chamber, and one of the magnetic field generating means is used for etching and removing unnecessary deposits deposited on the microwave introducing window. A semiconductor wafer is placed in a reaction chamber of an ECR plasma CVD apparatus used for the above, a reaction gas is introduced into the plasma generation chamber, microwaves are guided to the plasma generation chamber, and plasma is generated. A method for manufacturing a semiconductor device, comprising: depositing a CVD thin film on the semiconductor device.